ATE394818T1 - Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator - Google Patents

Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator

Info

Publication number
ATE394818T1
ATE394818T1 AT04722906T AT04722906T ATE394818T1 AT E394818 T1 ATE394818 T1 AT E394818T1 AT 04722906 T AT04722906 T AT 04722906T AT 04722906 T AT04722906 T AT 04722906T AT E394818 T1 ATE394818 T1 AT E394818T1
Authority
AT
Austria
Prior art keywords
light
semiconductor devices
optical semiconductor
pump
vertical resonator
Prior art date
Application number
AT04722906T
Other languages
English (en)
Inventor
Stephane Luc Dominique Calvez
John-Mark Hopkins
David Burns
Martin David Dawson
Original Assignee
Univ Strathclyde
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Strathclyde filed Critical Univ Strathclyde
Application granted granted Critical
Publication of ATE394818T1 publication Critical patent/ATE394818T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094084—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
AT04722906T 2003-03-24 2004-03-24 Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator ATE394818T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0306798A GB2399941A (en) 2003-03-24 2003-03-24 Vertical cavity semiconductor optical devices

Publications (1)

Publication Number Publication Date
ATE394818T1 true ATE394818T1 (de) 2008-05-15

Family

ID=9955462

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04722906T ATE394818T1 (de) 2003-03-24 2004-03-24 Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator

Country Status (6)

Country Link
US (1) US20070274361A1 (de)
EP (1) EP1606863B1 (de)
AT (1) ATE394818T1 (de)
DE (1) DE602004013562D1 (de)
GB (1) GB2399941A (de)
WO (1) WO2004086577A2 (de)

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US20060029112A1 (en) * 2004-03-31 2006-02-09 Young Ian A Surface emitting laser with an integrated absorber
KR101015499B1 (ko) * 2004-06-19 2011-02-16 삼성전자주식회사 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부
EP1608049B1 (de) * 2004-06-19 2007-08-01 Samsung Electronics Co., Ltd. Mehrwellenlängenlasersystem mit externem Resonator
KR100668329B1 (ko) * 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
FR2892196B1 (fr) * 2005-10-18 2008-06-20 Genewave Soc Par Actions Simpl Procede de fabrication d'un biocapteur a detection integree
KR20070052059A (ko) * 2005-11-16 2007-05-21 삼성전자주식회사 펌프 빔의 재활용이 가능한 외부 공진기형 면발광 레이저
DE102005058900A1 (de) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator
JP2007173304A (ja) * 2005-12-19 2007-07-05 Sony Corp 面発光型半導体レーザ
US20070290191A1 (en) * 2006-06-16 2007-12-20 Vitaly Shuchukin Resonant cavity optoelectronic device with suppressed parasitic modes
DE102007040369A1 (de) * 2007-08-17 2009-02-19 Landesstiftung Baden-Württemberg gGmbH Laserverstärkersystem
DE102008009412B4 (de) * 2008-02-15 2010-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Infrarot-Halbleiterlaser
DE102008017268A1 (de) * 2008-03-03 2009-09-10 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit monolithisch integriertem Pumplaser
DE102008038804A1 (de) * 2008-08-13 2010-02-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip
US9112331B2 (en) 2012-03-22 2015-08-18 Palo Alto Research Center Incorporated Surface emitting laser incorporating third reflector
US9124062B2 (en) * 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
US9112332B2 (en) 2012-06-14 2015-08-18 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
US8934514B2 (en) * 2012-12-13 2015-01-13 Oulun Yliopisto Laser
EP2963744B1 (de) * 2014-06-30 2019-04-03 Canon Kabushiki Kaisha Oberflächenemissionslaser und vorrichtung zur optischen kohärenztomografie damit
US9853417B2 (en) 2014-09-22 2017-12-26 Arizona Board Of Regents On Behalf Of The University Of Arizona Nonequilibrium pulsed femtosecond semiconductor disk laser
US9466948B2 (en) * 2014-09-22 2016-10-11 The Arizona Board Of Regents On Behalf Of The University Of Arizona Nonequilibrium pulsed femtosecond semiconductor disk laser
CN104882783B (zh) * 2015-04-16 2017-10-17 山西大学 一种实现双向光学二极管的方法及装置
US10148059B2 (en) * 2016-06-23 2018-12-04 Theodore John Podgorski Gain mirror for solid state ring laser rotation sensors
US10739137B2 (en) 2018-08-17 2020-08-11 Honeywell International Inc. Solid state ring laser gyroscope using rare-earth gain dopants in glassy hosts
CN110265874B (zh) * 2019-06-26 2020-09-29 长春中科长光时空光电技术有限公司 一种垂直腔半导体光放大器，光放大系统及制备方法
CN114336283B (zh) * 2021-12-30 2023-05-02 北京工业大学 一种光模式调制光子级联激光器及制备方法

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US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5513203A (en) * 1995-04-05 1996-04-30 At&T Corp. Surface emitting laser having improved pumping efficiency
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6101023A (en) * 1998-09-11 2000-08-08 Northrop Grumman Corporation Line periodically poled LiNbO3 (PPLN) optical parametric oscillator (OPO-DFG-OPO) with common doubly resonant cavity
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US6735234B1 (en) * 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
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US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
US6628695B1 (en) * 2002-03-07 2003-09-30 The Board Of Trustees Of The Leland Stanford Junior University Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL)
US6859481B2 (en) * 2002-07-16 2005-02-22 Applied Optoelectronics, Inc. Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power

Also Published As

Publication number Publication date
EP1606863A2 (de) 2005-12-21
GB0306798D0 (en) 2003-04-30
GB2399941A (en) 2004-09-29
US20070274361A1 (en) 2007-11-29
DE602004013562D1 (de) 2008-06-19
WO2004086577A3 (en) 2005-02-17
WO2004086577A2 (en) 2004-10-07
EP1606863B1 (de) 2008-05-07

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