ATE428199T1 - Strahlungsemitter mit geneigtem pumpstrahl - Google Patents

Strahlungsemitter mit geneigtem pumpstrahl

Info

Publication number
ATE428199T1
ATE428199T1 AT05759811T AT05759811T ATE428199T1 AT E428199 T1 ATE428199 T1 AT E428199T1 AT 05759811 T AT05759811 T AT 05759811T AT 05759811 T AT05759811 T AT 05759811T AT E428199 T1 ATE428199 T1 AT E428199T1
Authority
AT
Austria
Prior art keywords
pumping
cavity
radiation
input
emmitter
Prior art date
Application number
AT05759811T
Other languages
English (en)
Inventor
Johan Rothman
Emmanuel Picard
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE428199T1 publication Critical patent/ATE428199T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Communication System (AREA)
AT05759811T 2004-05-04 2005-05-02 Strahlungsemitter mit geneigtem pumpstrahl ATE428199T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0404803A FR2870051B1 (fr) 2004-05-04 2004-05-04 Emetteur de rayonnement avec faisceau de pompage incline

Publications (1)

Publication Number Publication Date
ATE428199T1 true ATE428199T1 (de) 2009-04-15

Family

ID=34946829

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05759811T ATE428199T1 (de) 2004-05-04 2005-05-02 Strahlungsemitter mit geneigtem pumpstrahl

Country Status (7)

Country Link
US (1) US20080031300A1 (de)
EP (1) EP1745531B1 (de)
JP (1) JP2007536755A (de)
AT (1) ATE428199T1 (de)
DE (1) DE602005013764D1 (de)
FR (1) FR2870051B1 (de)
WO (1) WO2005109584A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007061481A1 (de) * 2007-09-21 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
JP2014011442A (ja) * 2012-07-03 2014-01-20 Alps Electric Co Ltd 鏡筒付き透光窓および光モジュール

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5048047A (en) * 1990-09-12 1991-09-10 International Business Machines Corporation Passive absorptive resonator laser system and method
JPH05343770A (ja) * 1992-06-10 1993-12-24 Fuji Photo Film Co Ltd レーザーダイオードポンピング固体レーザー
US5390210A (en) * 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal
JPH07307509A (ja) * 1994-05-12 1995-11-21 Ishikawajima Harima Heavy Ind Co Ltd 固体レーザ
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
DE19517963A1 (de) * 1995-05-16 1996-11-28 Adlas Gmbh & Co Kg Longitudinal gepumpter Laser
JP3270738B2 (ja) * 1998-06-11 2002-04-02 富士写真フイルム株式会社 半導体レーザ励起固体レーザ
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
US6813285B2 (en) * 1999-06-21 2004-11-02 Litton Systems, Inc. Q-switched microlaser
FR2800364B1 (fr) * 1999-10-29 2002-02-15 Commissariat Energie Atomique Microcavite active accordable et procede de fabrication de microcavite active accordable
JP2001223429A (ja) * 2000-02-09 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
US6643305B2 (en) * 2000-04-07 2003-11-04 The United States Of America As Represented By The Secretary Of The Navy Optical pumping injection cavity for optically pumped devices
JP3503588B2 (ja) * 2000-10-30 2004-03-08 澁谷工業株式会社 固体レーザ発振装置
GB2369929A (en) * 2000-12-08 2002-06-12 Univ Southampton Semiconductor laser device
CA2328637A1 (en) * 2000-12-15 2002-06-15 Richard D. Clayton Lateral optical pumping of vertical cavity surface emitting laser
FR2833758B1 (fr) * 2001-12-13 2004-12-10 Commissariat Energie Atomique Dispositif d'emission de lumiere a micro-cavite et procede de fabrication de ce dispositif
FR2833757B1 (fr) * 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif

Also Published As

Publication number Publication date
FR2870051B1 (fr) 2009-04-03
EP1745531A2 (de) 2007-01-24
US20080031300A1 (en) 2008-02-07
DE602005013764D1 (de) 2009-05-20
FR2870051A1 (fr) 2005-11-11
WO2005109584A2 (fr) 2005-11-17
JP2007536755A (ja) 2007-12-13
WO2005109584A3 (fr) 2006-06-29
EP1745531B1 (de) 2009-04-08

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Legal Events

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