DE60218690T2 - Blitztempering - Google Patents
Blitztempering Download PDFInfo
- Publication number
- DE60218690T2 DE60218690T2 DE60218690T DE60218690T DE60218690T2 DE 60218690 T2 DE60218690 T2 DE 60218690T2 DE 60218690 T DE60218690 T DE 60218690T DE 60218690 T DE60218690 T DE 60218690T DE 60218690 T2 DE60218690 T2 DE 60218690T2
- Authority
- DE
- Germany
- Prior art keywords
- radiant energy
- substrate
- energy source
- wafer
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005496 tempering Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000012141 concentrate Substances 0.000 claims description 7
- 239000012809 cooling fluid Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 108
- 239000010410 layer Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 24
- 238000004804 winding Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Resistance Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US910298 | 2001-07-20 | ||
| US09/910,298 US6376806B2 (en) | 2000-05-09 | 2001-07-20 | Flash anneal |
| PCT/US2002/022716 WO2003009350A2 (en) | 2001-07-20 | 2002-07-18 | Flash anneal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60218690D1 DE60218690D1 (de) | 2007-04-19 |
| DE60218690T2 true DE60218690T2 (de) | 2007-12-06 |
Family
ID=25428586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60218690T Expired - Fee Related DE60218690T2 (de) | 2001-07-20 | 2002-07-18 | Blitztempering |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6376806B2 (enExample) |
| EP (1) | EP1410423B1 (enExample) |
| JP (2) | JP2004536457A (enExample) |
| KR (1) | KR100809240B1 (enExample) |
| AT (1) | ATE356430T1 (enExample) |
| DE (1) | DE60218690T2 (enExample) |
| TW (1) | TWI270104B (enExample) |
| WO (1) | WO2003009350A2 (enExample) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6048411A (en) * | 1997-05-12 | 2000-04-11 | Silicon Genesis Corporation | Silicon-on-silicon hybrid wafer assembly |
| US20070122997A1 (en) * | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
| US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| JP3798674B2 (ja) * | 2001-10-29 | 2006-07-19 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
| US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
| CN101324470B (zh) * | 2001-12-26 | 2011-03-30 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
| US6849831B2 (en) | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
| US7005601B2 (en) | 2002-04-18 | 2006-02-28 | Applied Materials, Inc. | Thermal flux processing by scanning |
| US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
| JP4429609B2 (ja) * | 2002-06-25 | 2010-03-10 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US6809035B2 (en) * | 2002-08-02 | 2004-10-26 | Wafermasters, Inc. | Hot plate annealing |
| JP2004134674A (ja) * | 2002-10-11 | 2004-04-30 | Toshiba Corp | 基板処理方法、加熱処理装置、パターン形成方法 |
| US6835914B2 (en) * | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
| US6881681B2 (en) * | 2002-11-22 | 2005-04-19 | Freescale Semiconductor, Inc. | Film deposition on a semiconductor wafer |
| JP4258631B2 (ja) * | 2002-12-03 | 2009-04-30 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| JP4988202B2 (ja) | 2002-12-20 | 2012-08-01 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の支持及び熱処理の方法とシステム |
| JP4675579B2 (ja) * | 2003-06-30 | 2011-04-27 | 大日本スクリーン製造株式会社 | 光エネルギー吸収比率の測定方法、光エネルギー吸収比率の測定装置および熱処理装置 |
| US7115837B2 (en) * | 2003-07-28 | 2006-10-03 | Mattson Technology, Inc. | Selective reflectivity process chamber with customized wavelength response and method |
| US20050074985A1 (en) * | 2003-10-01 | 2005-04-07 | Yoo Woo Sik | Method of making a vertical electronic device |
| US7354815B2 (en) * | 2003-11-18 | 2008-04-08 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
| WO2005059991A1 (en) * | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| US7102141B2 (en) * | 2004-09-28 | 2006-09-05 | Intel Corporation | Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths |
| US20060118892A1 (en) * | 2004-12-02 | 2006-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Structures to Produce a Strain-Inducing Layer in a Semiconductor Device |
| JP4866020B2 (ja) * | 2005-05-02 | 2012-02-01 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| TWI254960B (en) * | 2005-07-01 | 2006-05-11 | Chunghwa Picture Tubes Ltd | Plasma display device |
| US20070221640A1 (en) | 2006-03-08 | 2007-09-27 | Dean Jennings | Apparatus for thermal processing structures formed on a substrate |
| US7652227B2 (en) * | 2006-05-18 | 2010-01-26 | Applied Materials, Inc. | Heating and cooling plate for a vacuum chamber |
| US20080025354A1 (en) * | 2006-07-31 | 2008-01-31 | Dean Jennings | Ultra-Fast Beam Dithering with Surface Acoustic Wave Modulator |
| US7548364B2 (en) | 2006-07-31 | 2009-06-16 | Applied Materials, Inc. | Ultra-fast beam dithering with surface acoustic wave modulator |
| US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
| US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
| US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
| US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
| WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
| US7629275B2 (en) * | 2007-01-25 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-time flash anneal process |
| JP2010525581A (ja) * | 2007-05-01 | 2010-07-22 | マトソン テクノロジー カナダ インコーポレイテッド | 照射パルス熱処理方法および装置 |
| US20090034071A1 (en) * | 2007-07-31 | 2009-02-05 | Dean Jennings | Method for partitioning and incoherently summing a coherent beam |
| US20090034072A1 (en) | 2007-07-31 | 2009-02-05 | Dean Jennings | Method and apparatus for decorrelation of spatially and temporally coherent light |
| US8148663B2 (en) | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
| JP5465373B2 (ja) * | 2007-09-12 | 2014-04-09 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| JP5221099B2 (ja) * | 2007-10-17 | 2013-06-26 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
| US9498845B2 (en) * | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
| US7800081B2 (en) * | 2007-11-08 | 2010-09-21 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
| JP4816634B2 (ja) * | 2007-12-28 | 2011-11-16 | ウシオ電機株式会社 | 基板加熱装置及び基板加熱方法 |
| US8314368B2 (en) * | 2008-02-22 | 2012-11-20 | Applied Materials, Inc. | Silver reflectors for semiconductor processing chambers |
| JP5346484B2 (ja) | 2008-04-16 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
| WO2009137940A1 (en) | 2008-05-16 | 2009-11-19 | Mattson Technology Canada, Inc. | Workpiece breakage prevention method and apparatus |
| US20100047476A1 (en) * | 2008-08-21 | 2010-02-25 | Maa Jer-Shen | Silicon Nanoparticle Precursor |
| US8330126B2 (en) * | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
| US8329557B2 (en) * | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
| JP2012043548A (ja) * | 2010-08-13 | 2012-03-01 | Thermo Riko:Kk | 高効率赤外線導入加熱装置 |
| KR101286058B1 (ko) | 2011-03-22 | 2013-07-19 | (주) 엔피홀딩스 | 열처리 장치 |
| DE102012110343A1 (de) * | 2012-10-29 | 2014-04-30 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur lokal differenzierbaren Bedampfung von Substraten |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9842753B2 (en) * | 2013-04-26 | 2017-12-12 | Applied Materials, Inc. | Absorbing lamphead face |
| JP5718975B2 (ja) * | 2013-05-23 | 2015-05-13 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| JP5898258B2 (ja) * | 2014-05-01 | 2016-04-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| US9287148B1 (en) * | 2014-12-18 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Dynamic heating method and system for wafer processing |
| CN108028214B (zh) * | 2015-12-30 | 2022-04-08 | 玛特森技术公司 | 用于毫秒退火系统的气体流动控制 |
| CN107393971A (zh) * | 2016-05-16 | 2017-11-24 | 昱晶能源科技股份有限公司 | 回复太阳能电池模块的效率的方法及其可携式装置 |
| JP6783571B2 (ja) * | 2016-07-13 | 2020-11-11 | 日本碍子株式会社 | 放射装置及び放射装置を用いた処理装置 |
| CN110785684B (zh) | 2017-06-29 | 2022-06-03 | 3M创新有限公司 | 制品及其制造方法 |
| JP7508303B2 (ja) | 2020-07-31 | 2024-07-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575224A (en) * | 1978-12-01 | 1980-06-06 | Ushio Inc | Annealing furnace |
| US4356384A (en) | 1980-03-03 | 1982-10-26 | Arnon Gat | Method and means for heat treating semiconductor material using high intensity CW lamps |
| US4436985A (en) | 1982-05-03 | 1984-03-13 | Gca Corporation | Apparatus for heat treating semiconductor wafers |
| US4707217A (en) | 1986-05-28 | 1987-11-17 | The United States Of America As Represented By The Secretary Of The Navy | Single crystal thin films |
| US4755654A (en) | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
| US5073698A (en) * | 1990-03-23 | 1991-12-17 | Peak Systems, Inc. | Method for selectively heating a film on a substrate |
| JPH0448621A (ja) * | 1990-06-14 | 1992-02-18 | Fujitsu Ltd | 半導体装置の製造方法及び製造装置 |
| US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| GB2284469B (en) | 1993-12-01 | 1997-12-03 | Spectral Technology Limited | Lamp assembly |
| US5452396A (en) * | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
| JP3195157B2 (ja) | 1994-03-28 | 2001-08-06 | シャープ株式会社 | 半導体装置の製造方法およびその製造装置 |
| US5712191A (en) | 1994-09-16 | 1998-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| JP3573811B2 (ja) | 1994-12-19 | 2004-10-06 | 株式会社半導体エネルギー研究所 | 線状レーザー光の照射方法 |
| DE19544838A1 (de) | 1995-12-01 | 1997-06-05 | Bosch Gmbh Robert | Zündvorrichtung für eine Hochdruck-Gasentladungslampe |
| US5756369A (en) | 1996-07-11 | 1998-05-26 | Lsi Logic Corporation | Rapid thermal processing using a narrowband infrared source and feedback |
| JPH1174206A (ja) * | 1997-08-27 | 1999-03-16 | Japan Steel Works Ltd:The | 多結晶半導体の製造方法および製造装置 |
| US6080965A (en) * | 1997-09-18 | 2000-06-27 | Tokyo Electron Limited | Single-substrate-heat-treatment apparatus in semiconductor processing system |
| JPH1197370A (ja) | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | 熱処理装置 |
| KR20010006155A (ko) * | 1998-02-13 | 2001-01-26 | 야스카와 히데아키 | 반도체장치의 제조방법 및 열처리장치 |
| US6144171A (en) | 1999-05-07 | 2000-11-07 | Philips Electronics North America Corporation | Ignitor for high intensity discharge lamps |
| DE19923400A1 (de) * | 1999-05-21 | 2000-11-30 | Steag Rtp Systems Gmbh | Vorrichtung und Verfahren zum thermischen Behandeln von Substraten |
| JP2003100638A (ja) * | 2001-07-16 | 2003-04-04 | Seiko Epson Corp | 半導体薄膜及び薄膜トランジスタの製造方法、電気光学装置及び電子機器 |
-
2001
- 2001-07-20 US US09/910,298 patent/US6376806B2/en not_active Expired - Lifetime
-
2002
- 2002-07-18 DE DE60218690T patent/DE60218690T2/de not_active Expired - Fee Related
- 2002-07-18 EP EP02748190A patent/EP1410423B1/en not_active Expired - Lifetime
- 2002-07-18 AT AT02748190T patent/ATE356430T1/de not_active IP Right Cessation
- 2002-07-18 KR KR1020037002899A patent/KR100809240B1/ko not_active Expired - Fee Related
- 2002-07-18 WO PCT/US2002/022716 patent/WO2003009350A2/en not_active Ceased
- 2002-07-18 JP JP2003514597A patent/JP2004536457A/ja active Pending
- 2002-07-19 TW TW091116132A patent/TWI270104B/zh not_active IP Right Cessation
-
2008
- 2008-01-08 JP JP2008000960A patent/JP4931833B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE60218690D1 (de) | 2007-04-19 |
| WO2003009350A2 (en) | 2003-01-30 |
| JP2004536457A (ja) | 2004-12-02 |
| US6376806B2 (en) | 2002-04-23 |
| JP2008153680A (ja) | 2008-07-03 |
| KR20030051631A (ko) | 2003-06-25 |
| ATE356430T1 (de) | 2007-03-15 |
| US20010047990A1 (en) | 2001-12-06 |
| TWI270104B (en) | 2007-01-01 |
| JP4931833B2 (ja) | 2012-05-16 |
| KR100809240B1 (ko) | 2008-02-29 |
| EP1410423B1 (en) | 2007-03-07 |
| WO2003009350A3 (en) | 2003-06-19 |
| EP1410423A2 (en) | 2004-04-21 |
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| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |