JP2004536457A - フラッシュアニール - Google Patents

フラッシュアニール Download PDF

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Publication number
JP2004536457A
JP2004536457A JP2003514597A JP2003514597A JP2004536457A JP 2004536457 A JP2004536457 A JP 2004536457A JP 2003514597 A JP2003514597 A JP 2003514597A JP 2003514597 A JP2003514597 A JP 2003514597A JP 2004536457 A JP2004536457 A JP 2004536457A
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JP
Japan
Prior art keywords
radiant energy
substrate
energy source
reflector
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003514597A
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English (en)
Japanese (ja)
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JP2004536457A5 (enExample
Inventor
ヨー、ウー・シク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WaferMasters Inc
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WaferMasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WaferMasters Inc filed Critical WaferMasters Inc
Publication of JP2004536457A publication Critical patent/JP2004536457A/ja
Publication of JP2004536457A5 publication Critical patent/JP2004536457A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
JP2003514597A 2001-07-20 2002-07-18 フラッシュアニール Pending JP2004536457A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/910,298 US6376806B2 (en) 2000-05-09 2001-07-20 Flash anneal
PCT/US2002/022716 WO2003009350A2 (en) 2001-07-20 2002-07-18 Flash anneal

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008000960A Division JP4931833B2 (ja) 2001-07-20 2008-01-08 フラッシュアニール

Publications (2)

Publication Number Publication Date
JP2004536457A true JP2004536457A (ja) 2004-12-02
JP2004536457A5 JP2004536457A5 (enExample) 2007-06-07

Family

ID=25428586

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003514597A Pending JP2004536457A (ja) 2001-07-20 2002-07-18 フラッシュアニール
JP2008000960A Expired - Fee Related JP4931833B2 (ja) 2001-07-20 2008-01-08 フラッシュアニール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008000960A Expired - Fee Related JP4931833B2 (ja) 2001-07-20 2008-01-08 フラッシュアニール

Country Status (8)

Country Link
US (1) US6376806B2 (enExample)
EP (1) EP1410423B1 (enExample)
JP (2) JP2004536457A (enExample)
KR (1) KR100809240B1 (enExample)
AT (1) ATE356430T1 (enExample)
DE (1) DE60218690T2 (enExample)
TW (1) TWI270104B (enExample)
WO (1) WO2003009350A2 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011515021A (ja) * 2008-02-22 2011-05-12 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバーのための銀リフレクタ
KR101286058B1 (ko) 2011-03-22 2013-07-19 (주) 엔피홀딩스 열처리 장치
JP2013201448A (ja) * 2013-05-23 2013-10-03 Dainippon Screen Mfg Co Ltd 熱処理方法
US8861944B2 (en) 2008-04-16 2014-10-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and method for heating substrate by light irradiation
JP2015057842A (ja) * 2007-05-01 2015-03-26 マトソン テクノロジー、インコーポレイテッド 照射パルス熱処理方法および装置
JP2018008425A (ja) * 2016-07-13 2018-01-18 日本碍子株式会社 放射装置及び放射装置を用いた処理装置
JP2018504774A (ja) * 2014-12-18 2018-02-15 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ウエハー処理のためのダイナミック加熱方法及びシステム

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US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
JP3798674B2 (ja) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
US7255899B2 (en) * 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate
CN101324470B (zh) * 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US6849831B2 (en) 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7005601B2 (en) 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP4429609B2 (ja) * 2002-06-25 2010-03-10 大日本スクリーン製造株式会社 熱処理装置
US6809035B2 (en) * 2002-08-02 2004-10-26 Wafermasters, Inc. Hot plate annealing
JP2004134674A (ja) * 2002-10-11 2004-04-30 Toshiba Corp 基板処理方法、加熱処理装置、パターン形成方法
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US6881681B2 (en) * 2002-11-22 2005-04-19 Freescale Semiconductor, Inc. Film deposition on a semiconductor wafer
JP4258631B2 (ja) * 2002-12-03 2009-04-30 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
JP4675579B2 (ja) * 2003-06-30 2011-04-27 大日本スクリーン製造株式会社 光エネルギー吸収比率の測定方法、光エネルギー吸収比率の測定装置および熱処理装置
US7115837B2 (en) * 2003-07-28 2006-10-03 Mattson Technology, Inc. Selective reflectivity process chamber with customized wavelength response and method
US20050074985A1 (en) * 2003-10-01 2005-04-07 Yoo Woo Sik Method of making a vertical electronic device
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7102141B2 (en) * 2004-09-28 2006-09-05 Intel Corporation Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
US20060118892A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Structures to Produce a Strain-Inducing Layer in a Semiconductor Device
JP4866020B2 (ja) * 2005-05-02 2012-02-01 大日本スクリーン製造株式会社 熱処理装置
TWI254960B (en) * 2005-07-01 2006-05-11 Chunghwa Picture Tubes Ltd Plasma display device
US20070221640A1 (en) 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
US7652227B2 (en) * 2006-05-18 2010-01-26 Applied Materials, Inc. Heating and cooling plate for a vacuum chamber
US20080025354A1 (en) * 2006-07-31 2008-01-31 Dean Jennings Ultra-Fast Beam Dithering with Surface Acoustic Wave Modulator
US7548364B2 (en) 2006-07-31 2009-06-16 Applied Materials, Inc. Ultra-fast beam dithering with surface acoustic wave modulator
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US7629275B2 (en) * 2007-01-25 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-time flash anneal process
US20090034071A1 (en) * 2007-07-31 2009-02-05 Dean Jennings Method for partitioning and incoherently summing a coherent beam
US20090034072A1 (en) 2007-07-31 2009-02-05 Dean Jennings Method and apparatus for decorrelation of spatially and temporally coherent light
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
JP5465373B2 (ja) * 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
JP5221099B2 (ja) * 2007-10-17 2013-06-26 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
US9498845B2 (en) * 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US7800081B2 (en) * 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus
JP4816634B2 (ja) * 2007-12-28 2011-11-16 ウシオ電機株式会社 基板加熱装置及び基板加熱方法
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
US20100047476A1 (en) * 2008-08-21 2010-02-25 Maa Jer-Shen Silicon Nanoparticle Precursor
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
JP2012043548A (ja) * 2010-08-13 2012-03-01 Thermo Riko:Kk 高効率赤外線導入加熱装置
DE102012110343A1 (de) * 2012-10-29 2014-04-30 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur lokal differenzierbaren Bedampfung von Substraten
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9842753B2 (en) * 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
JP5898258B2 (ja) * 2014-05-01 2016-04-06 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
CN107393971A (zh) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 回复太阳能电池模块的效率的方法及其可携式装置
CN110785684B (zh) 2017-06-29 2022-06-03 3M创新有限公司 制品及其制造方法
JP7508303B2 (ja) 2020-07-31 2024-07-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

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JPH1197370A (ja) * 1997-09-18 1999-04-09 Tokyo Electron Ltd 熱処理装置
WO2000072636A1 (de) * 1999-05-21 2000-11-30 Steag Rtp Systems Gmbh Vorrichtung und verfahren zum thermischen behandeln von substraten

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JPS5575224A (en) * 1978-12-01 1980-06-06 Ushio Inc Annealing furnace
JPH1197370A (ja) * 1997-09-18 1999-04-09 Tokyo Electron Ltd 熱処理装置
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015057842A (ja) * 2007-05-01 2015-03-26 マトソン テクノロジー、インコーポレイテッド 照射パルス熱処理方法および装置
JP2011515021A (ja) * 2008-02-22 2011-05-12 アプライド マテリアルズ インコーポレイテッド 半導体処理チャンバーのための銀リフレクタ
JP2015092564A (ja) * 2008-02-22 2015-05-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理チャンバーのための銀リフレクタ
JP2017011282A (ja) * 2008-02-22 2017-01-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理チャンバーのための銀リフレクタ
JP2018152579A (ja) * 2008-02-22 2018-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理チャンバーのための銀リフレクタ
US8861944B2 (en) 2008-04-16 2014-10-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and method for heating substrate by light irradiation
KR101286058B1 (ko) 2011-03-22 2013-07-19 (주) 엔피홀딩스 열처리 장치
JP2013201448A (ja) * 2013-05-23 2013-10-03 Dainippon Screen Mfg Co Ltd 熱処理方法
JP2018504774A (ja) * 2014-12-18 2018-02-15 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ウエハー処理のためのダイナミック加熱方法及びシステム
JP2018008425A (ja) * 2016-07-13 2018-01-18 日本碍子株式会社 放射装置及び放射装置を用いた処理装置

Also Published As

Publication number Publication date
DE60218690D1 (de) 2007-04-19
WO2003009350A2 (en) 2003-01-30
US6376806B2 (en) 2002-04-23
DE60218690T2 (de) 2007-12-06
JP2008153680A (ja) 2008-07-03
KR20030051631A (ko) 2003-06-25
ATE356430T1 (de) 2007-03-15
US20010047990A1 (en) 2001-12-06
TWI270104B (en) 2007-01-01
JP4931833B2 (ja) 2012-05-16
KR100809240B1 (ko) 2008-02-29
EP1410423B1 (en) 2007-03-07
WO2003009350A3 (en) 2003-06-19
EP1410423A2 (en) 2004-04-21

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