JP5111620B2 - デバイスウェーハーをキャリヤー基板に逆に装着する方法 - Google Patents
デバイスウェーハーをキャリヤー基板に逆に装着する方法 Download PDFInfo
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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Description
(1)化学的・・接合したウェーハースタックを溶媒または化学薬品中に浸漬、またはスプレーし高分子接着剤を溶解または分解する。
(2)光分解・・接合したウェーハースタックに透明のキャリヤーを透して光源を照射しキャリヤーに隣接した接着剤境界層を光分解する。これでキャリヤーをスタックから分離でき、残りの高分子接着剤はデバイスウェーハーがチャックに固定されている間に剥きとられる。
(3)熱力学的・・接合したウェーハースタックを高分子接着剤の軟化点を超えて加熱し、次いでデバイスウェーハーがウェーハー全保持チャックで支えられている状態でキャリヤーから滑り離すかまたは引き離す。
(4)熱分解・・接合したウェーハースタックを高分子接着剤の分解温度より高く加熱し、これを気化させてデバイスウェーハーとキャリヤーの接着性を失わせる。
エッジ面は接着剤接合され中央面は化学的に改質
エポキシベースの感光レジスト(SU−8 2002、Microchem社、マサチューセッツ州ニュートン)を100mmシリコンウェーハー(ウェーハー1)の表面上の外側端に分注しウェーハー面の約3〜5mm巾の部分を塗工した。フッ化シラン((ヘプタデカフルオロ−1,1,2,2−テトラヒドラデシル)トリクロロシラン)をFC−40溶媒(主にC12を伴ったペルフルオロ化合物、Fluorinertの商品名で販売、3Mから入手)を用い1%溶液まで希釈した。溶液をウェーハー1の表面上にスピンコートした。ウェーハー1をホットプレート上で100℃で1分間焼いた。これをスピンコーター内でFC−40溶媒ですすぎ100℃でさらに1分間焼いた。エポキシベースのフォトレジストはスピンコーター内でアセトンを用いて除去し、端部はフッ化シラン溶液の処理を受けないままに残した。
端部面は接着剤接合、中央面は化学的に改質、さらに剥離は端部にくさびと共に溶媒ジェットを使用
エポキシベースの感光レジストを200mmシリコンウェーハー(ウェハー1)の表面上の外側端に分注しウェーハー面の約3〜5mm巾の部分を塗工した。フッ化シラン((ヘプタデカフルオロ−1,1,2,2−テトラヒドラデシル)トリクロロシラン)をFC−40溶媒を用い1%溶液まで希釈した。溶液をウェーハー1の表円上にスピンコートした。ウェーハー1をホットプレート上で100℃で1分間焼いた。これをスピンコーター内でFC−40溶媒ですすぎ100℃でさらに1分間焼いた。エポキシベースのフォトレジストはスピンコーター内でアセトンを用いて除去し、端部はフッ化シラン溶液の処理を受けないままに残した。
エッジ面は接着剤接合され中央面は離型材料を塗工
エポキシベースのネガティブ感光レジスト(SU−8 2010の商品名で販売されている。Microchem社から入手)を100mmガラスウェーハー上にスピンコートした。ウェーハーを100℃で2分間焼いた。TeflonTM AF溶液(FC−40内のTeflonTM AF2400、DuPontから入手)をSU−8 2010の上にスピンコートした。次いで、FC−40溶媒をウェーハー面の外側端に分注しウェーハー面から3〜5mm巾の部分のTeflonTM AF塗膜を除去した。ウェーハーを110℃で2分間焼いた。ウェーハーをブランクの100mmシリコンウェーハーと向かい合わせにし、加熱した真空および加熱チャンバー内で真空下で120℃で3分間接合した。接合したウェーハーをガラスウェーハーの外側から広帯域UV光に暴露した。暴露したウェーハーを120℃で2分間焼きSU−8 2010塗膜を架橋した。これらは2つのウェーハーの間の端部にカミソリ刃を挿入して剥離した。分離後、シリコンウェーハーには外側の3〜5mmに材料の輪だけがあり、一方中央では材料の移行はなかった。この実施例の何れのウェーハーもデバイスウェーハーまたはキャリヤーウェーハーと見なすことができる。
エッジ面は接着剤接合され中央面は接着増進剤を塗工
始めに次のものを混合してシリコンアクリレートコポリマーを準備した:624gのメタクリロキシプロピルトリス(トリス−メチルシロキシ)シラン;336gのメタクリル酸グリシジル;および9.6gの過酸化ジクミル。次に、1430.4gの1−ブタノールを反応器に加え1時間で116℃まで加熱した。4時間かけてモノマー溶液を滴下し、116℃で20時間重合を実行し固形物割合が40.4%であるシリコンアクリレートコポリマーを生じた。
エッジ面は接着剤接合され中央面は何れの基板にも低接着力である材料で充填
実施例3で用いた TeflonTM AF溶液を100mmシリコンウェーハー(ウェーハー1)面上にスピンコートした。次に、FC−40溶媒をウェーハー面の外側端に分注しウェーハー面から3〜5mm巾部分のTeflonTMAF塗膜を除去した。ウェーハーを110℃で2分間焼いた。ウェーハーの端部は WaferBONDTM HT10.10 接合組成物を材料が端部だけに分注されるようにスピンコートにより塗工された。ウェーハーはブランクの100mmシリコンウェーハー(ウェーハー2)と向かい合わせにし、加熱した真空および加熱チャンバー内で真空下で220℃で2分間接合した。ウェーハーは2枚のウェーハーの間の端部にカミソリ刃を挿入して剥離された。分離後、ウェーハー2の外側の3〜5mmに接着材料の輪があっただけで、一方中央には材料の移送はなかった。この実施例の何れのウェーハーもデバイスウェーハーまたはキャリヤーウェーハーの何れとも見なすことができる。
Claims (15)
- 背面と周縁域および中央域を持つデバイス面とを有し、かつ集積回路、MEMS、マイクロセンサー、動力半導体、発光ダイオード、フォトニック回路、インタポーザー、埋込受動素子、およびマイクロデバイスでシリコン、シリコンゲルマニウム、ガリウム砒素、および窒化ガリウム上に製造されたものまたはこれから製造されたもの、から成る群から選択されたデバイスの配列を含む前記デバイス面を有するデバイスウェーハーを含む第1基板、
キャリヤー面を持つ第2基板、
前記周縁域および前記キャリヤー面に接合され、かつ前記中央域には欠如することにより充填ゾーンを形成している、接着力が約50psigより大きなエッジボンド、および
前記充填ゾーン内の接着力が約50psig未満の充填素材
を含むスタックを供給し、
前記第1および第2基板を分離する
ことを含む、暫定接合方法。 - 前記第2基板がシリコン、サファイヤ、水晶、金属、ガラス、およびセラミックスから成る群から選択された素材を含む、請求項1に記載の方法。
- 前記デバイス面が、ハンダ盛り上がり、金属ポスト、金属ピラー、および構造体でシリコン、ポリシリコン、二酸化ケイ素、(オキシ)窒化ケイ素、金属、低k誘電体、高分子誘電体、窒化金属類、および金属ケイ素化合物類から成る群から選択されたもの、から成る群から選択された構造体を少なくとも1つ含む、請求項1または2に記載の方法。
- 前記充填素材が充填ゾーン内で前記キャリヤー面に接している請求項1〜3のいずれかに記載の方法。
- 前記充填素材が前記キャリヤー面と接する第1面、および前記デバイス面と接する第2面を呈し、前記充填素材が前記第1面から前記第2面まで一様な素材である、請求項1〜4のいずれかに記載の方法。
- 前記充填素材が第1面および第2面を呈し、前記スタックがさらに前記第1および第2面の一方と接する第2層も備え、前記第1および第2面の他方が前記キャリヤー面および前記デバイス面のどちらかと接している、請求項1〜5のいずれかに記載の方法。
- 前記第2層が低接着力層、高分子層、および前記キャリヤー面または前記デバイス面の表面改質から成る群から選択される、請求項6に記載の方法。
- 前記第2層が前記キャリヤー面と接している、請求項7に記載の方法。
- 前記エッジボンドの巾が約2mmから約15mmである、請求項1〜8のいずれかに記載の方法。
- 前記エッジボンドが、モノマー類、オリゴマー類、またはポリマー類でエポキシ類、アクリル系、シリコン類、スチレン系、ハロゲン化ビニル類、ビニルエステル類、ポリアミド類、ポリイミド類、ポリスルホン類、ポリエーテルスルホン類、環状オレフィン類、ポリオレフィンゴム類、およびポリウレタン類から成る群から選択されたものを含む素材から形成される、請求項1〜9のいずれかに記載の方法。
- 前記充填素材がモノマー類、オリゴマー類、および/またはポリマー類で環状オレフィン類および非晶形フッ化ポリマー類から成る群から選択されたものを含む、請求項1〜10のいずれかに記載の方法。
- さらに前記スタックを、前記第1および第2基板の分離に先立って、背面研削、化学的−機械的研磨、エッチング、金属および誘電体蒸着、パターニング、不動態化、アニーリング、およびこれらの組合せから成る群から選択された処理工程に掛けることを含む、請求項1〜11のいずれかに記載の方法。
- さらに前記エッジボンドを溶解するために前記分離に先立って前記エッジボンドを溶媒に曝すことを含む、請求項1〜12のいずれかに記載の方法。
- さらに前記分離に先立って前記エッジボンドを機械的に壊すことを含む、請求項1〜13のいずれかに記載の方法。
- 前記分離が前記第1および第2基板の少なくとも一方にこれらを引き離すために小さな力を加えることを含む、請求項1〜14のいずれかに記載の方法。
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US2337908P | 2008-01-24 | 2008-01-24 | |
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PCT/US2009/031862 WO2009094558A2 (en) | 2008-01-24 | 2009-01-23 | Method for reversibly mounting a device wafer to a carrier substrate |
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JP4746003B2 (ja) * | 2007-05-07 | 2011-08-10 | リンテック株式会社 | 移載装置及び移載方法 |
CN101925996B (zh) | 2008-01-24 | 2013-03-20 | 布鲁尔科技公司 | 将器件晶片可逆地安装在载体基片上的方法 |
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- 2009-01-23 PT PT97032049T patent/PT2238618E/pt unknown
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US9889635B2 (en) | 2012-12-13 | 2018-02-13 | Corning Incorporated | Facilitated processing for controlling bonding between sheet and carrier |
US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
US10538452B2 (en) | 2012-12-13 | 2020-01-21 | Corning Incorporated | Bulk annealing of glass sheets |
US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
US11660841B2 (en) | 2015-05-19 | 2023-05-30 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
US11999135B2 (en) | 2018-08-20 | 2024-06-04 | Corning Incorporated | Temporary bonding using polycationic polymers |
Also Published As
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EP2238618A4 (en) | 2011-03-09 |
EP2238618A2 (en) | 2010-10-13 |
DE112009000140B4 (de) | 2022-06-15 |
TWI439526B (zh) | 2014-06-01 |
AT508318B1 (de) | 2022-07-15 |
JP2011510518A (ja) | 2011-03-31 |
AT508318A3 (de) | 2015-12-15 |
AT12755U1 (de) | 2012-11-15 |
JP2012253367A (ja) | 2012-12-20 |
DE112009000140T5 (de) | 2010-11-18 |
CN101925996B (zh) | 2013-03-20 |
AT508318A2 (de) | 2010-12-15 |
CN101925996A (zh) | 2010-12-22 |
US20110069467A1 (en) | 2011-03-24 |
CA2711266A1 (en) | 2009-07-30 |
IL206872A (en) | 2015-07-30 |
RU2010129076A (ru) | 2012-01-20 |
WO2009094558A2 (en) | 2009-07-30 |
KR101096142B1 (ko) | 2011-12-19 |
KR20100095021A (ko) | 2010-08-27 |
JP5558531B2 (ja) | 2014-07-23 |
IL206872A0 (en) | 2010-12-30 |
DE202009018064U1 (de) | 2010-12-02 |
US9099512B2 (en) | 2015-08-04 |
US20090218560A1 (en) | 2009-09-03 |
EP2238618B1 (en) | 2015-07-29 |
US9111981B2 (en) | 2015-08-18 |
WO2009094558A3 (en) | 2009-09-24 |
TW200946628A (en) | 2009-11-16 |
PT2238618E (pt) | 2015-09-03 |
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