JP5111573B2 - 逆に装着されたデバイスウェーハーをキャリヤー基板から分離する方法および装置 - Google Patents
逆に装着されたデバイスウェーハーをキャリヤー基板から分離する方法および装置 Download PDFInfo
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- JP5111573B2 JP5111573B2 JP2010183931A JP2010183931A JP5111573B2 JP 5111573 B2 JP5111573 B2 JP 5111573B2 JP 2010183931 A JP2010183931 A JP 2010183931A JP 2010183931 A JP2010183931 A JP 2010183931A JP 5111573 B2 JP5111573 B2 JP 5111573B2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
(1)化学的・・接合したウェーハースタックを溶媒または化学薬品中に浸漬、またはスプレーし高分子接着剤を溶解または分解する。
(2)光分解・・接合したウェーハースタックに透明のキャリヤーを透して光源を照射しキャリヤーに隣接した接着剤境界層を光分解する。これでキャリヤーをスタックから分離でき、残りの高分子接着剤はデバイスウェーハーがチャックに固定されている間に除去される。
(3)熱機械的・・接合したウェーハースタックを高分子接着剤の軟化点を超えて加熱し、次いでデバイスウェーハーを全ウェーハー保持チャックで支えられている状態でキャリヤーからずらすかまたは引き離す。
(4)熱分解・・接合したウェーハースタックを高分子接着剤の分解温度より高く加熱し、これを気化させてデバイスウェーハーとキャリヤーに対する接着性を失わせる。
[改質された中央面を持つエッジボンドされたウェーハーの外側端から接合材料の除去を伴う手動式剥ぎ取り器を用いた分離]
[接着されたウェーハースタックの手動の剥ぎ取り分離器を用いた分離]
この手順では、ウェーハースタックは本発明による別の方法にしたがって準備され次いで手動の剥ぎ取り分離器を用いて分離される。2枚のウェーハーを一緒に接着する前に、1枚のシリコンウェーハーの中央面はフッ化シラン溶液を用いて化学的に改質しウェーハー面を横切って接着力の格差を作り出す。ウェーハーの中央面を改質するため、ウェーハーの端部を先ずエポキシベースのフォトレジスト(SU−82002、Microchem社、マサチューセッツ州ニュートン)を用いてマスクした。フォトレジスト組成物は200mmシリコンウェーハー(ウェーハー1)の外側端面に分注しウェーハー面の周縁リング形状の部分に塗工しその巾は約2.5mmであった。
[中央接触面が剥離材料で塗膜されたウェーハースタックを分離するために使用された手動式剥ぎ取り分離器]
この手順において、ウェーハースタックは本発明による別の方法により準備されさらにこの場合もやはり手動式剥ぎ取り分離器を用いて分離する。2枚のウェーハーを一緒に接着する前に、一方のウェーハーの中央面に剥離材料を塗膜しウェーハー面の中央層界面を横切って接着力格差を作りだす。先ず、エポキシベースのネガティブフォトレジスト(SU−82010の商品名で販売されている、Microchem社から入手)を200mmガラスウェーハー(ウェーハー1)上の全面にスピンコートし、次に110℃で2分焼いて溶媒の除去をおこなった。次にTeflonTMAF溶液(FC−40内のTeflonTM AF2400、Du Pontから入手)をフォトレジスト層の上にスピンコートして非粘着層を作りだした。次いで、FC−40溶媒をウェーハー面の外側端に分注しウェーハー面の周縁端から1〜3mm巾の部分のTeflonTMAF塗膜を除去し、その後110℃で2分焼いで溶媒を除去した。
[何れの基板にも低接着性の材料を中央面に充填されたウェーハースタックを分離するのに使用された手動式剥ぎ取り分離器]
この手順では、ウェーハースタックは本発明による別の方法にしたがって準備されそれからこの場合もやはり手動の剥ぎ取り分離器を用いて分離される。2枚のウェーハーを一緒に接着する前に、1枚のシリコンウェーハーの中央面に離型剤を塗膜しウェーハー面を横切って接着力の格差を作り出す。実施例3で用いたTeflonTM AF溶液を200mmシリコンウェーハー(ウェーハー1)にスピンコートして厚みが約10μmの塗膜を形成した。次に、FC−40溶媒をウェーハー面の外側端に分注しウェーハー面から約3〜5mm巾部分のTeflonTMAF塗膜を除去した。ウェーハーをそれから110℃で2分焼いた。次に、ウェーハーの端部に約3〜5mm巾でおよそ10μm厚さの層を形成するように端部のみに材料が分注されるようにスピンコートでWaferbondTMHT10.10接合組成物を塗工した。かくして、TeflonTMAF塗膜および接合材料はウェーハー面を横断して均一ではない単層を形成した。ウェーハーはそれからブランクの200mmシリコンウェーハー(ウェーハー2)と向かい合わせに、真空下で加熱した真空および加圧チャンバー内で220℃および10psigで2分接合した。
Claims (19)
- 接合された基板を分離するリングクランプで、前記リングクランプがほぼ円形でかつ中央に開口部を伴う平らなボディーを持ち、前記ボディーが次のものから構成されるリングクランプ:
環状の内側側壁;
環状の外側側壁;
内側側壁および外側側壁の間に延びる上面;
内側側壁から外側に延びるウェーハーはめ込み面で、ボディー内において外側壁面から離れた地点で終わっている前記ウェーハーはめ込み面;および
内側に延びる環状の棟で、前記地点から内側に、およびウェーハーはめ込み面から離れるように傾斜する、内側に延びる環状の棟、
ここに前記ウェーハーはめ込み面および環状の棟が協同して環状のウェーハー受入れ溝を形成する。 - 前記ボディーが2つの自由端を持つ単一形成の分割リングクランプである、請求項1に記載のリングクランプ。
- 前記環状の棟が自由端で終わりかつ自由端およびボディー内のウェーハーはめ込み面が終わる地点の間に延びる傾斜した肩面を持つ、請求項1または2に記載のリングクランプ。
- 前記溝がウェーハーはめ込み面から棟の肩面までを測って10°以上90°未満の角度(θ)を持つ、請求項3に記載のリングクランプ。
- 環状の棟の自由端が内側側壁で規定される面を越えて内側へ延びることが無く、環状の棟が内側側壁より外側にずれている、請求項3または4に記載のリングクランプ。
- 前記ボディーが複数部品から構成され、各部品が単一形成されている、請求項1〜5のいずれかに記載のリングクランプ。
- 前記ボディーが金属類、セラミックス類、ポリマー類、複合材料、およびこれらの組合せから成る群から選択された素材から形成されている、請求項1〜6のいずれかに記載のリングクランプ。
- 前記ボディーの内側側壁から外側側壁まで測った巾「W」が、0.1から50mmである、請求項1〜7のいずれかに記載のリングクランプ。
- 内側側壁の厚み「t」が0.1から15mmである、請求項1〜8のいずれかに記載のリングクランプ。
- 外側側壁の厚み「T」が0.15から16mmである、請求項1〜9のいずれかに記載のリングクランプ。
- 暫定接合方法で次のことから構成される、暫定接合方法:
次のものから構成されるスタックの供給:
背面およびデバイス面を持ち、前記基板面には周縁域および中央域がある第1基板;
第2基板で、前記第1基板に接合され、前記第2基板にはキャリヤー面、背側面、および第2基板の周縁を規定する最外側端があり、前記キャリヤー面には周縁域および中央域がある第2基板;および
前記第1および第2基板を前記第2基板の周縁の一部に力を加えることにより前記第2基板をスタックから遠ざかる角度に曲げることによる剥ぎ取り動作を用いて分離し、これにより前記第1基板および第2基板を分離し、
前記分離がリングクランプを用いて実施され、該リングクランプには前記リングクランプの周縁および中央開口部を規定するほぼ円形の平らなボディーがあり、
前記ボディーが次のものから構成され、
環状の内側側壁;
環状の外側側壁;
内側側壁および外側側壁の間に延びる上面;
内側側壁から外側に延びるウェーハーはめ込み面で、ボディー内において外側壁面から離れた地点で終わっている前記ウェーハーはめ込み面;および
内側に延びる環状の棟で、前記地点から内側に、およびウェーハーはめ込み面から離れるように傾斜する、内側に延びる環状の棟、
ここに前記ウェーハーはめ込み面および環状の棟が協同して環状のウェーハー受入れ溝を形成し、
前記リングクランプが第2基板の周縁の周りに締め付けられ、前記第2基板の周縁の少なくとも一部が前記溝に受け入れられており、
さらに前記の力が前記リングクランプの周縁の一部のみに加えられこれにより第2基板の周縁の該当部分を前記剥ぎ取り動作によりスタックから遠ざかるように持ち上げる、暫定接合方法。 - 前記ボディーが2つの自由端を持つ分割リングクランプの形状である、請求項11に記載の暫定接合方法。
- 前記リングクランプが前記第2基板の周縁の周りに次のようにして締め付けられている、請求項12に記載の暫定接合方法:
前記自由端を互いから離れるように動かし、これにより前記ボディーの中央開口部を拡大する;
前記リングクランプを第2基板の周縁の周りに配置する;および
前記自由端を互いの方向に引き、前記分離の前に第2基板を押さえるようにはめ込む。
ここに前記リングクランプの環状の棟は自由端で終わりかつ棟の自由端およびウェーハーはめ込み面がボディー内で終わる地点との間に延びる傾斜した肩面を持ち、前記第2基板の背側面がボディーのウェーハーはめ込み面にはめ込まれ、および第2基板の最外側端および基板の周縁域が棟の肩および自由端にはめ込まれている。 - 前記リングクランプが前記第2基板の周縁の少なくとも1°をはめ込む、請求項13に記載の暫定接合方法。
- 前記リングクランプが前記第1基板に接触しない、請求項11〜14のいずれかに記載の暫定接合方法。
- 前記スタックの第1基板が前記基板を分離する前にチャックに固定されている、請求項11〜15のいずれかに記載の暫定接合方法。
- 前記第1基板が前記チャックに静電気力、真空力、磁力、機械的力、物理的拘束、または前記チャックおよび前記第1基板の間の粘着フィルム層を介して固定されている、請求項16に記載の暫定接合方法。
- 前記チャックが前記分離中に第2基板から遠ざけられる、請求項16または17に記載の暫定接合方法。
- 接合された基板を分離するディスク形状のクランプで、前記クランプは無垢の、ほぼ円形の平らなボディーを持ち、前記ボディーは次のものから構成されている:
前記ボディーの外側直径を規定する環状の外側側壁;
前記外側側壁の直径全体に延びる上面;
ボディー内において外側側壁から離れた地点の間に延びるウェーハーはめ込み面;および
内側へ延びる環状の棟で、これは前記地点から内側に、かつウェーハーはめ込み面から遠ざかるように傾斜する環状の棟、
ここに前記ウェーハーはめ込み面および環状の棟は協同して環状のウェーハー受入れ溝を形成する。
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TWI495030B (zh) | 2015-08-01 |
DE102010027703B4 (de) | 2014-10-16 |
CA2709626A1 (en) | 2011-12-21 |
EP2398040B1 (en) | 2015-05-13 |
US20110308739A1 (en) | 2011-12-22 |
SG177039A1 (en) | 2012-01-30 |
TW201201304A (en) | 2012-01-01 |
DE102010027703A1 (de) | 2011-12-22 |
RU2010129938A (ru) | 2012-01-27 |
JP5848205B2 (ja) | 2016-01-27 |
AT510068A2 (de) | 2012-01-15 |
KR20110139072A (ko) | 2011-12-28 |
AT16223U1 (de) | 2019-04-15 |
WO2011162778A1 (en) | 2011-12-29 |
AT510068A3 (de) | 2014-11-15 |
CN102290367B (zh) | 2015-06-24 |
JP2012212939A (ja) | 2012-11-01 |
EP2398041A1 (en) | 2011-12-21 |
KR101239282B1 (ko) | 2013-03-07 |
AT14714U1 (de) | 2016-04-15 |
EP2398040A1 (en) | 2011-12-21 |
IL207044A0 (en) | 2010-12-30 |
AT510068B1 (de) | 2019-07-15 |
JP2012004522A (ja) | 2012-01-05 |
CN102290367A (zh) | 2011-12-21 |
EP2398041B1 (en) | 2018-10-31 |
US8852391B2 (en) | 2014-10-07 |
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