FR2866983B1 - Realisation d'une entite en materiau semiconducteur sur substrat - Google Patents

Realisation d'une entite en materiau semiconducteur sur substrat

Info

Publication number
FR2866983B1
FR2866983B1 FR0402080A FR0402080A FR2866983B1 FR 2866983 B1 FR2866983 B1 FR 2866983B1 FR 0402080 A FR0402080 A FR 0402080A FR 0402080 A FR0402080 A FR 0402080A FR 2866983 B1 FR2866983 B1 FR 2866983B1
Authority
FR
France
Prior art keywords
entity
realizing
substrate
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0402080A
Other languages
English (en)
Other versions
FR2866983A1 (fr
Inventor
Vaillant Yves Mathieu Le
Olivier Rayssac
Christophe Fernandez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0402080A priority Critical patent/FR2866983B1/fr
Priority to US10/863,193 priority patent/US7176554B2/en
Priority to EP05290392A priority patent/EP1571705A3/fr
Priority to JP2005056052A priority patent/JP4818618B2/ja
Publication of FR2866983A1 publication Critical patent/FR2866983A1/fr
Application granted granted Critical
Publication of FR2866983B1 publication Critical patent/FR2866983B1/fr
Priority to US11/617,025 priority patent/US7439160B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR0402080A 2004-03-01 2004-03-01 Realisation d'une entite en materiau semiconducteur sur substrat Expired - Lifetime FR2866983B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0402080A FR2866983B1 (fr) 2004-03-01 2004-03-01 Realisation d'une entite en materiau semiconducteur sur substrat
US10/863,193 US7176554B2 (en) 2004-03-01 2004-06-07 Methods for producing a semiconductor entity
EP05290392A EP1571705A3 (fr) 2004-03-01 2005-02-22 Réalisation d'une entité en matériau semiconducteur sur substrat
JP2005056052A JP4818618B2 (ja) 2004-03-01 2005-03-01 基板上に半導体材料を備えた構造体の製造
US11/617,025 US7439160B2 (en) 2004-03-01 2006-12-28 Methods for producing a semiconductor entity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0402080A FR2866983B1 (fr) 2004-03-01 2004-03-01 Realisation d'une entite en materiau semiconducteur sur substrat

Publications (2)

Publication Number Publication Date
FR2866983A1 FR2866983A1 (fr) 2005-09-02
FR2866983B1 true FR2866983B1 (fr) 2006-05-26

Family

ID=34834151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0402080A Expired - Lifetime FR2866983B1 (fr) 2004-03-01 2004-03-01 Realisation d'une entite en materiau semiconducteur sur substrat

Country Status (2)

Country Link
US (1) US7176554B2 (fr)
FR (1) FR2866983B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2858461B1 (fr) * 2003-07-30 2005-11-04 Soitec Silicon On Insulator Realisation d'une structure comprenant une couche protegeant contre des traitements chimiques
FR2865574B1 (fr) * 2004-01-26 2006-04-07 Soitec Silicon On Insulator Procede de fabrication d'un substrat demontable
US7713835B2 (en) * 2006-10-06 2010-05-11 Brewer Science Inc. Thermally decomposable spin-on bonding compositions for temporary wafer bonding
FR2911430B1 (fr) * 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
KR20080080833A (ko) * 2007-03-02 2008-09-05 삼성전자주식회사 반도체 웨이퍼의 제조 방법
US7935780B2 (en) 2007-06-25 2011-05-03 Brewer Science Inc. High-temperature spin-on temporary bonding compositions
KR101096142B1 (ko) * 2008-01-24 2011-12-19 브레우어 사이언스 인코포레이션 캐리어 기판에 디바이스 웨이퍼를 가역적으로 장착하는 방법
US8092628B2 (en) * 2008-10-31 2012-01-10 Brewer Science Inc. Cyclic olefin compositions for temporary wafer bonding
DE102009004559A1 (de) * 2009-01-14 2010-07-22 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Halbleiterdünnschicht mit einem direkten Halbleitermaterial
US8771927B2 (en) * 2009-04-15 2014-07-08 Brewer Science Inc. Acid-etch resistant, protective coatings
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
DE102016114949B4 (de) * 2016-08-11 2023-08-24 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements
KR102596988B1 (ko) * 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715501B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
KR100304161B1 (ko) 1996-12-18 2001-11-30 미다라이 후지오 반도체부재의제조방법
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
WO1999001893A2 (fr) * 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Procede pour produire des structures en couche sur un substrat, substrat et composants a semi-conducteur produits a l'aide dudit procede
FR2809867B1 (fr) 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
JP3957038B2 (ja) 2000-11-28 2007-08-08 シャープ株式会社 半導体基板及びその作製方法
US6774010B2 (en) * 2001-01-25 2004-08-10 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
FR2821697B1 (fr) 2001-03-02 2004-06-25 Commissariat Energie Atomique Procede de fabrication de couches minces sur un support specifique et une application
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
TW586231B (en) * 2001-07-24 2004-05-01 Seiko Epson Corp Transfer method, methods of manufacturing thin film devices and integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, manufacturing methods of IC card and electronic appliance
FR2837620B1 (fr) * 2002-03-25 2005-04-29 Commissariat Energie Atomique Procede de transfert d'elements de substrat a substrat
US20050048736A1 (en) * 2003-09-02 2005-03-03 Sebastien Kerdiles Methods for adhesive transfer of a layer

Also Published As

Publication number Publication date
US20050191779A1 (en) 2005-09-01
FR2866983A1 (fr) 2005-09-02
US7176554B2 (en) 2007-02-13

Similar Documents

Publication Publication Date Title
FR2866983B1 (fr) Realisation d'une entite en materiau semiconducteur sur substrat
FR2844364B1 (fr) Substrat diffusant
EP1901123A4 (fr) Composition adhésive photosensible et film adhésif, feuille adhésive, tranche de semi-conducteur avec couche adhésive, dispositif semi-conducteur et pièce électronique obtenus en utilisant cette composition
BR0312249B1 (pt) substrato transparente.
DE60238361D1 (de) Halbleitersubstratschablone
TWI319600B (en) Substrate having silicon germanium material and stressed silicon nitride layer
AU2003231810A1 (en) Microwave field effect transistor structure on silicon carbide substrate
JP2009545878A5 (fr)
IL159707A0 (en) Thermoelectric module with thin film substrate
DE50110873D1 (de) Laterales Halbleiterbauelement in Dünnfilm-SOI-Technik
SG116648A1 (en) Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same.
GB2429114B (en) Semiconductor on insulator substrate and devices formed therefrom
TWI368675B (en) Nitride-based semiconductor substrate and semiconductor device
DE60304225D1 (de) NIickelsilizid mit verminderter Grenzflächenrauhigkeit
DE60205204D1 (de) Barriereschicht für siliziumhaltiges Substrat
DE60315911D1 (de) Kühlkörper mit Vielfachoberflächenvergrösserung
DE602005002346D1 (de) Haftvermittelnde additive enthaltende substrate und damit hergestellte gegenstände
EP1720175A4 (fr) Film conducteur transparent et mat riau de base conducteur transparent utilisant ledit film
DE10238843B8 (de) Halbleiterbauelement
EP1732128A4 (fr) Substrat pour dispositif a semiconducteur et dispositif a semiconducteur
FR2843481B1 (fr) Memoire sur substrat du type silicium sur isolant
AU2003230702A1 (en) Semiconductor device with components embedded in backside diamond layer
DE60301923D1 (de) Geschlitzes Substrat
ATA10012003A (de) Schichtwerkstoff
DE502004007108D1 (de) Multifunktion-Substratsträger

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120926

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 17

PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19

PLFP Fee payment

Year of fee payment: 20