JP7362612B2 - 3-d ic用途用レーザー離型性接着材料 - Google Patents
3-d ic用途用レーザー離型性接着材料 Download PDFInfo
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- JP7362612B2 JP7362612B2 JP2020531625A JP2020531625A JP7362612B2 JP 7362612 B2 JP7362612 B2 JP 7362612B2 JP 2020531625 A JP2020531625 A JP 2020531625A JP 2020531625 A JP2020531625 A JP 2020531625A JP 7362612 B2 JP7362612 B2 JP 7362612B2
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- Prior art keywords
- diglycidyl ether
- adhesive layer
- substrate
- layer
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims description 49
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
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Images
Classifications
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08L71/12—Polyphenylene oxides
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
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- B32B7/06—Interconnection of layers permitting easy separation
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- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
(関連出願)
本願は、2017年12月22日提出の、LASER-RELASEABLE BONDING MATERIALS FOR 3-D IC APPLICATIONS(3-D IC用途用レーザー離型性接着材料)と題した米国特許仮出願第62/609,426号の優先権の利益を主張するものであり、その全体を参照して本明細書に援用する。
本発明は、一時ウェーハ接着プロセスにおける接着組成物として使用するための、または再配線層を形成する際のビルドアップ層として使用するためのレーザー離型性組成物に関する。
一時ウェーハ接着(TWB)は、通常、重合性接着材料によってデバイスウェーハまたはマイクロエレクトロニクス基板をキャリアウェーハまたは基板に取り付けるプロセスを意味している。接着後、デバイスウェーハは、一般的には50μm未満まで薄膜化され、次にその裏側上にシリコン貫通電極(TSV)、再配線層、接着パッド、およびその他の回路形態を作製する処理が行われる。キャリアウェーハは、周囲温度と高温(>250℃)の間で繰り返されるサイクル、ウェーハ取扱いおよび搬送工程による機械的衝撃、およびデバイスウェーハを薄膜化するために用いられるウェーハ裏面研磨処理の際に押し付けられるような強い機械力を必然的に伴い得る裏面処理の間、脆弱なデバイスウェーハを支持する。この処理の全てが完了した際、デバイスウェーハはたいていフィルムフレームに取り付けられ、続いてキャリアウェーハから分離されるか剥離され、その後の操作が行われる前に洗浄される。
さらに別の実施形態において、マイクロエレクトロニクス構造は、表面を有する基板を含む。ビルドアップ層は、基板表面上にあり、ポリヒドロキシエーテルを含み、基板表面から遠く離れた上面を有する。上面上には、第1再配線層が存在する。
本発明は、一時接着またはビルドアップ組成物として使用するための新規な組成物、ならびにそれらの組成物を使用する方法に関する。
1.ポリヒドロキシエーテル
本発明で使用するための組成物は、ポリヒドロキシエーテルを含む。好ましいポリヒドロキシエーテルは、ポリマーまたはオリゴマーであり得、好ましい繰り返し単位としては、ジヒドロキシ含有染料およびジグリシジルエーテルが挙げられる。
本発明で使用するための接着またはビルドアップ組成物は、ポリヒドロキシエーテルを溶剤系に単に溶解することによって形成される。適切な溶剤としては、シクロペンタノン、シクロヘキサノン、ガンマブチロラクトン(GBL)、テトラヒドロフルフリルアルコール、ベンジルアルコール、ジメチルスルホキシド(DMSO)、n-メチル-2-ピロリドン(NMP)、およびそれらの混合物からなる群から選択されるものが挙げられる。好ましくは、撹拌しながら、溶出を約24時間かけて行って、均質な溶液とする。この溶液は、使用前に濾過されるのが好ましい。
1.一時接着の実施形態
図1(a)(ノンスケール)を参照すると、前駆体構造10が概略的な断面図で表されている。構造10は、第1基板12を含む。基板12は、前面またはデバイス面14、背面16、および最外端18を有する。基板12は、どんな形状にもなることができるが、通常は円形状となる。好ましい第1基板12としては、デバイス面が集積回路と、MEMSと、マイクロセンサと、電力半導体と、発光ダイオードと、フォトニック回路と、インターポーザーと、埋め込み型受動デバイスと、シリコンや、シリコン-ゲルマニウム、ヒ化ガリウム、窒化ガリウム、ヒ化アルミニウムガリウム、リン化アルミニウムインジウムガリウム、およびリン化インジウムガリウム等のその他半導体材料上に、またはそれらから製作されるその他マイクロデバイスとからなる群から選択されるデバイスの配列(図示せず)を含むようなデバイスウェーハが挙げられる。これらデバイスの表面は一般に1以上の以下の材料、シリコン、ポリシリコン、二酸化シリコン、(酸)窒化シリコン、金属(例えば、銅、アルミニウム、金、タングステン、タンタル)、低kの誘電体、ポリマー誘電体、ならびに種々の金属窒化物と金属珪化物から形成される構造(これも図示せず)を含む。デバイス面14は、はんだバンプと、金属ポストと、金属ピラーと、シリコン、ポリシリコン、二酸化シリコン、(酸)窒化シリコン、金属、低kの誘電体、ポリマー誘電体、金属窒化物、および金属珪化物からなる群から選択される材料から形成される構造とからなる群から選択される少なくとも1つの構造を含むこともできる。
さらなる実施形態において、本発明のレーザー離型性組成物は、再配線層(「RDL」)形成用の、特に、ウェーハまたはパネルレベルプロセスにおけるRDL-ファースト/チップ-ラストパッケージングにおいて、ビルドアップ層として使用することができ、これはパッケージングの際の既知良品ダイ損失を最小限に抑えるか、または回避するのにも良好である。そのようなプロセスの1つの概略を図3に示す。
<レーザー剥離用ポリマー1>
この手順では、13.07gの4,4’-ジヒドロキシベンゾフェノン(TCIアメリカ、ポートランド、オレゴン州)、20.76gのビスフェノールAジグリシジルエーテル(D.E.R.TM 332、シグマアンドリッチ社、セントルイス、ミズーリ州)、および0.84gのエチルトリフェニルホスホリウムブロミド(シグマアンドリッチ社、セントルイス、ミズーリ州)を、三口丸底フラスコ中の65.33gのシクロペンタノン(シグマアンドリッチ社、セントルイス、ミズーリ州)に溶解させた。混合物を、140℃で12時間反応させた。得られたポリマー1を、1,000gのエタノール(シグマアンドリッチ社、セントルイス、ミズーリ州)中に沈殿させた後、真空下80℃で一晩乾燥させた。
<ポリマー1の特性>
熱重量分析(TGA)を、空気および窒素の両方において、10℃/分の勾配(ramp)で行った。結果を図4および図5に示す。このポリマーは、空気中ではおよそ350℃、窒素中ではおよそ360℃の比較的高い初期分解温度を示した。
<ポリマー1の光学試験>
ポリマー1の光学定数(nおよびk)を、多入射角分光エリプソメーター(VASE)を用いて決定した。表2は、2つの異なる波長におけるサンプルの光学定数nおよびkを示す。ポリマー1は、308nmではk値が0.2で非常に良好な吸光度を示したが、355nmではk値が0.008で良好ではなかった。308nmでのこの高いkは、ポリマー1がこの波長で良好なレーザー剥離性能を有する可能性があることをさらに示した。
<配合物1を用いた接着>
この実施例では、実施例1の配合物1の16μmを、キャリアウェーハとしての8インチのガラスウェーハ上にコーティングした。このコーティングは、3,000rpm/sの加速度で30秒間、1,000rpmでスピンコーティングすることによって達成された。次に、キャリアウェーハを50℃で3分間、120℃で3分間、および200℃で3分間ベークした。コーティングされたキャリアウェーハを、EVG(商標登録)510ボンディングシステム(EVグループ社)において、真空下(<5mbar)、230℃、2,000Nで3分間接着することによって、8インチSiウェーハに接着した。接着した対を、プレシテック社のセンサを使用し、スピニング基板を測定し、ウェーハ表面上の数百、または数千の点を測定することができるChrocdail IR干渉計(SUSS Microtec社のSE)でスキャンした。空隙は検出されず(図6参照)、この材料は、測定値の97%を使用して、1.72μmの最小トータルシックネスバリエーション(「TTV」)で、良好な接着線(16.7μm厚さ)を示した。
<配合物1を用いたウェーハ薄層化>
実施例4において記載したように用意された6つの接着したウェーハ対を、60μmの目標厚さで、研削/研磨装置(DGP8761、ディスコ社)を用いて研削薄層化試験に供した。ウェーハを1μm/s~5μm/sの除去速度で90μmに粗研削し、次いで0.2μm/s~0.4μm/sの除去速度でさらに62μmに研削した。次いで、ウェーハを研磨して、1μm/分の除去速度でさらに2μm薄くし、60μmの最終目標厚さを達成した。表3は、6つのウェーハ対の詳細なデータを示す。接着線の厚さおよびTTVは、研削前の数と一致し、研削プロセスにおける接着材料の機械的安定性を示した。薄くしたSiウェーハもまた、良好なTTVと共に目標厚さを達成した。さらに、薄くしたウェーハ対を、250℃で30分間、窒素炉中でベークすることによって、熱シミュレーションを行った。いずれのウェーハにも重大な欠陥は観察されなかった。
<配合物1を使用したレーザー剥離および洗浄>
接着したウェーハ対は、市販の3つの主要なUVレーザー波長、SUSS社のELD12レーザー剥離機、EVG半自動剥離システム、およびKingyoup社のLD-Semi Automatic 200/300を使用することにより、うまく剥離された。3つの剥離機の各々についてのレーザー剥離パラメータを表4に列挙する。剥離されたデバイスウェーハの画像を、図7に示す。デバイスウェーハ上に残っている残留物はいずれも、シクロペンタノンを用いて非常に良好に洗浄された。洗浄後、ウェーハは、緑色光の下で、残留物を伴わずに、目視観察でクリーンであった。
<レーザー剥離用ポリマー2>
この実施例では、17.71グラムの4,4’-ジヒドロキシベンゾフェノン、30.94グラムのビスフェノールAジグリシジルエーテル(D.E.R.TM 332)、および1.35グラムのエチルトリフェニルホスホリウムブロミドを、三つ口丸底フラスコ中の50グラムのシクロヘキサノン(シグマアンドリッチ社、セントルイス、ミズーリ州)に溶解させた。混合物を、150℃で24時間反応させた。
<配合物2を用いた接着>
この手順では、実施例7からの配合物2の21μmを、キャリアウェーハとしての8インチガラスウェーハ上に、3,000rpm/sの加速度で30秒間、1,000rpmでスピンコーティングすることによってコーティングした。次に、キャリアウェーハを50℃で4分間、110℃で4分間、200℃で4分間、最後に220℃で4分間ベークした。コーティングされたキャリアウェーハを、8インチSiウェーハに接着した。このウェーハ対を、EVG(商標登録)510ボンダーにおいて、真空下(<5mbar)、210℃、2,000Nで4分間接着した。良好な接着線形成が目視検査で確認された。
<配合物2からのドライフィルムの作製>
バーコーター(K303 Multicoater、RK PrintCoat Instruments社、英国)を使用して、レーザー感受性熱可塑性配合物2を、次の条件下:ギャップ80μmおよび速度4m/分で、50μmポリエチレンテレフタレートキャリアフィルム(H950A、Nan Ya Plastics Corporation、台湾)上にキャストした。溶剤キャストフィルムをホットプレート中で50℃で5分間、次いで140℃で5分間乾燥させて、厚さ20μm、幅200mm、および長さ300mmの寸法の自立型乾燥接着フィルムを得た。
<ドライフィルムの積層>
実施例9で作成した接着フィルムを、Tamerica、TCC-2700ホットロールラミネーターを用いて、次の条件下:140℃のローラー温度および速度0.2m/分で、100mmガラスウェーハ上に積層した。余分なフィルムをナイフでトリミングし、積層後に、ベースとなるポリエチレンテレフタレートフィルムを剥がした。
<積層ガラスウェーハの接着>
実施例10で用意した積層ガラスウェーハを、Cee(商標登録)ApogeeTMボンダー(Cost Effective Equipment、LLC、ローラ、ミズーリ州)を用いて、次の条件下:プラテン温度230℃および力1,800Nを3分間で別の100mmガラスウェーハと接着させた。ウェーハとウェーハの接着後に空隙や剥離は観察されなかった。
<接着したウェーハ対のレーザー離型および洗浄>
処理後、接着したガラスウェーハ対は、以下の条件下:出力6W、走査速度2m/s、およびラインピッチ40μmで、355nmレーザー剥離機(LD-Semi Automatic 300、Kingyoup社)を使用して分離された。剥離後、再使用およびさらなる処理のために、両方のガラスウェーハを、GBL-シクロヘキサノン共溶剤系でスピン洗浄した。
Claims (20)
- 背面および前面を有する第1基板と、前記前面に隣接し、ポリヒドロキシエーテルを含む接着層と、前記接着層に隣接する第1面を有する第2基板とを含むスタックを用意することと、
前記第1および第2基板の分離を容易にするために、前記接着層をUVレーザーエネルギーに露出することとを含む、一時接着方法であって、
前記ポリヒドロキシエーテルが、ジグリシジルエーテルとジヒドロキシ染料との共重合体を含み、
前記接着層が、前記第1と第2基板との間の唯一の層である、一時接着方法。 - 前記ジグリシジルエーテルが、ビスフェノールAジグリシジルエーテル、ビスフェノールFジグリシジルエーテル、1,4-シクロヘキサンジメタノールジグリシジルエーテル、レゾルシノールジグリシジルエーテル、ビスフェノールAプロポキシレートジグリシジルエーテル、エチレングリコールジグリシジルエーテル、1,4-シクロヘキサンジメタノールジグリシジルエーテル、グリセロールジグリシジルエーテル、1,4-ブタンジオールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,3-ブタンジオールジグリシジルエーテル、1,3-ビス(3-グリシドキシプロピル)テトラメチルジシロキサン、およびそれらの組み合わせからなる群から選択される、請求項1に記載の方法。
- 前記ジヒドロキシ染料が、4,4’-ジヒドロキシベンゾフェノン、ジヒドロキシカルコン染料、4-[(2-フェニルヒドラゾノ)メチル]レゾルシノール、ジヒドロキシアゾベンゼン、ジヒドロキシアントラキノン、2,2’-メチレンビス[6-(ベンゾトリアゾール-2-イル)-4-tert-オクチルフェノール]、クルクミン、クルクミン誘導体、およびそれらの組み合わせからなる群より選択される、請求項1に記載の方法。
- 前記接着層が熱可塑性層である、請求項1に記載の方法。
- 前記露出することが、約200mJ/cm2~約400mJ/cm2の線量で行われる、請求項1に記載の方法。
- 前記スタックを用意することが、前記前面上に前記接着層を形成することを含む、請求項1に記載の方法。
- 前記形成することが、流動性接着組成物を前記前面に適用することを含み、前記流動性組成物が、溶剤系に分散または溶解されたポリヒドロキシエーテルを含む、請求項6に記載の方法。
- 前記組成物を約120℃~約250℃の温度で約60秒~約10分間加熱して、前記接着層を形成することをさらに含む、請求項7に記載の方法。
- 前記形成することが、ポリヒドロキシエーテルを含む自立型フィルムを前記前面に適用して、前記接着層を形成することを含む、請求項6に記載の方法。
- 前記適用することが、前記自立型フィルムを前記前面に付着させることを含む、請求項9に記載の方法。
- 前記前面および前記第1面の一方が、
(1)集積回路と、MEMSと、マイクロセンサと、電力半導体と、発光ダイオードと、フォトニック回路と、インターポーザーと、埋め込み型受動デバイスと、シリコン、シリコン-ゲルマニウム、ヒ化ガリウム、および窒化ガリウム上に、またはそれらから製作されるマイクロデバイスとからなる群から選択されるデバイスの配列を含むデバイス面と、
(2)はんだバンプと、金属ポストと、金属ピラーと、シリコン、ポリシリコン、二酸化シリコン、(酸)窒化シリコン、金属、低kの誘電体、ポリマー誘電体、金属窒化物、および金属珪化物からなる群から選択される材料から形成される構造とからなる群から選択される少なくとも1つの構造を含むデバイス面とからなる群から選択される、請求項1に記載の方法。 - 前記第1および第2基板の一方が、ガラスまたは他の透明材料を含む、請求項1に記載の方法。
- 前記第1および第2基板を分離する前に、前記スタックに、裏面研削、化学機械研磨、エッチング、メタライジング、誘電堆積、パターニング、不動態化、アニーリング、再配線層形成、およびそれらの組み合わせからなる群から選択される処理を施すことをさらに含む、請求項1に記載の方法。
- 背面および前面を有する第1基板と、
前記前面に隣接し、ポリヒドロキシエーテルを含む接着層と、
前記接着層に隣接する第1面を有する第2基板とを含み、前記前面および前記第1面の少なくとも一方がデバイス面である、マイクロエレクトロニクス構造であって、
前記ポリヒドロキシエーテルが、ジグリシジルエーテルとジヒドロキシ染料との共重合体を含み、
前記接着層が、前記第1と第2基板との間の唯一の層であり、
前記接着層が、UVレーザーエネルギーに露出することにより前記第1基板及び/又は前記第2基板と分離可能となる、マイクロエレクトロニクス構造。 - 前記ジグリシジルエーテルが、ビスフェノールAジグリシジルエーテル、ビスフェノールFジグリシジルエーテル、1,4-シクロヘキサンジメタノールジグリシジルエーテル、レゾルシノールジグリシジルエーテル、ビスフェノールAプロポキシレートジグリシジルエーテル、エチレングリコールジグリシジルエーテル、1,4-シクロヘキサンジメタノールジグリシジルエーテル、グリセロールジグリシジルエーテル、1,4-ブタンジオールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,3-ブタンジオールジグリシジルエーテル、1,3-ビス(3-グリシドキシプロピル)テトラメチルジシロキサン、およびそれらの組み合わせからなる群から選択される、請求項14に記載のマイクロエレクトロニクス構造。
- 前記ジヒドロキシ染料が、4,4’-ジヒドロキシベンゾフェノン、ジヒドロキシカルコン染料、4-[(2-フェニルヒドラゾノ)メチル]レゾルシノール、ジヒドロキシアゾベンゼン、ジヒドロキシアントラキノン、2,2’-メチレンビス[6-(ベンゾトリアゾール-2-イル)-4-tert-オクチルフェノール]、クルクミン、クルクミン誘導体、およびそれらの組み合わせからなる群より選択される、請求項14に記載のマイクロエレクトロニクス構造。
- 前記接着層が、熱可塑性層である、請求項14に記載のマイクロエレクトロニクス構造。
- 前記接着層が、約1μm~約100μmの平均厚さを有する、請求項14に記載のマイクロエレクトロニクス構造。
- 前記前面および前記第1面の一方が、
(1)集積回路と、MEMSと、マイクロセンサと、電力半導体と、発光ダイオードと、フォトニック回路と、インターポーザーと、埋め込み型受動デバイスと、シリコン、シリコン-ゲルマニウム、ヒ化ガリウム、および窒化ガリウム上に、またはそれらから製作されるマイクロデバイスとからなる群から選択されるデバイスの配列を含むデバイス面と、
(2)はんだバンプと、金属ポストと、金属ピラーと、シリコン、ポリシリコン、二酸化シリコン、(酸)窒化シリコン、金属、低kの誘電体、ポリマー誘電体、金属窒化物、および金属珪化物からなる群から選択される材料から形成される構造とからなる群から選択される少なくとも1つの構造を含むデバイス面とからなる群から選択される、請求項14に記載のマイクロエレクトロニクス構造。 - 前記第1および第2基板の一方が、ガラスまたは他の透明材料を含む、請求項14に記載のマイクロエレクトロニクス構造。
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