WO2023274079A1 - 脱胶插片机及硅片加工方法 - Google Patents

脱胶插片机及硅片加工方法 Download PDF

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Publication number
WO2023274079A1
WO2023274079A1 PCT/CN2022/101212 CN2022101212W WO2023274079A1 WO 2023274079 A1 WO2023274079 A1 WO 2023274079A1 CN 2022101212 W CN2022101212 W CN 2022101212W WO 2023274079 A1 WO2023274079 A1 WO 2023274079A1
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WIPO (PCT)
Prior art keywords
degumming
silicon wafer
assembly
material frame
silicon
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PCT/CN2022/101212
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English (en)
French (fr)
Inventor
李宏
陈宏�
景健
张江水
王俊
张广犬
胡普查
Original Assignee
杭州中为光电技术有限公司
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Priority to EP22831893.7A priority Critical patent/EP4358122A1/en
Priority to US17/887,456 priority patent/US11749538B2/en
Publication of WO2023274079A1 publication Critical patent/WO2023274079A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of silicon wafer manufacturing, in particular to a degumming and inserting machine and a silicon wafer processing method.
  • Photovoltaic and semiconductor silicon wafers are cut by a wire cutting machine from the silicon wafers stuck on the crystal support. (AGV, Automated Guided Vehicle) is transported to a separate degumming machine for degumming.
  • AGV Automated Guided Vehicle
  • the degummed silicon wafers are taken out of the acid-containing water and put into the clips, and the clips are put into the water tank.
  • Machine manually take out the magazine and put it into the inserting machine for inserting.
  • a debonding and inserting machine and a silicon wafer processing method are provided.
  • the present application provides a degumming and inserting machine, including a material frame, a grabbing mechanism, a degumming mechanism, an unlocking mechanism and a inserting mechanism.
  • the material frame is used to place and clamp the silicon wafer bonded with the crystal tray
  • the grabbing mechanism is used to grab and transfer the material frame or crystal tray
  • the degumming mechanism is used to degumming the silicon wafer
  • the unlocking mechanism is used to release the material frame
  • the silicon wafer is clamped and fixed
  • the inserting mechanism is used to disassemble the degummed silicon wafer.
  • the inserting mechanism includes a conveying component, a clamping component and a water spraying component.
  • the transfer component is used for placing the silicon wafer and capable of transferring the silicon wafer.
  • the clamping assembly is arranged on both sides of the conveying assembly, and the clamping assembly can clamp the silicon wafer and transfer the silicon wafer synchronously with the conveying assembly.
  • the water spray assembly is arranged at one end of the transmission assembly, and the transmission assembly cooperates with the clamping assembly to transfer the silicon wafer to the end of the transmission assembly close to the water spray assembly.
  • the water spray assembly can blow water on the silicon wafer, so that the silicon wafer and the adjacent silicon wafer slices separated.
  • the clamping assembly includes a side belt transmission structure and a clamping drive unit.
  • the side belt transmission structure is arranged on both sides of the transmission assembly.
  • the clamping drive unit is connected to the side belt transmission structure and can drive the side belt transmission structure.
  • the belt conveyor structures move toward or away from each other to clamp or loosen the wafers.
  • the transmission assembly includes a bottom belt transmission structure, and one end of the bottom belt transmission structure close to the water spray assembly protrudes relative to one end of the side belt transmission structure close to the water spray assembly to form a front area, and the water spray assembly is provided on the side of the front area.
  • the degumming mechanism includes a degumming tank, an acid storage tank and a water storage tank, the acid storage tank and the water storage tank are connected to the degumming tank through pipelines, and the pipeline between the degumming tank and the acid storage tank is provided with a first control assembly,
  • the first control component can control the on-off between the degumming tank and the acid storage tank;
  • the second control component is arranged on the pipeline between the degumming tank and the water storage tank, and the second control component can control the communication between the degumming tank and the water storage tank broken.
  • the degumming tank is provided with a spray pipe, and the spray pipe is provided with a plurality of spray holes uniformly spaced along the length direction;
  • the second control assembly includes a second liquid pump, and the second liquid pump can deliver the liquid to the spray pipe. tube, and spray the liquid from the spray hole toward the space between the adjacent silicon wafers.
  • the material frame includes a main frame body and two opposite second clamping parts.
  • the main frame body is provided with a material trough, and the material trough has a chip outlet for passing a single silicon chip.
  • the second clamping part is rotatably connected to the main frame through the second rotating shaft, and by rotating the second rotating shaft, the two second clamping parts can approach or move away from each other to clamp or release the silicon wafer.
  • a buffer position is provided between the degumming mechanism and the inserting mechanism, and the buffer position is used to place the material frame holding the silicon wafer or place an empty material frame.
  • the material frame equipped with degummed silicon wafers can be placed on the buffer position to wait for the subsequent insertion process, so as to avoid the unsmooth operation of the degumming and insertion machine due to no place for the material frame.
  • the degumming mechanism is arranged on one side of the inserting mechanism, and the degumming mechanism and the inserting mechanism are installed on the same horizontal plane, and the grabbing mechanism is arranged above the degumming mechanism and the inserting mechanism. In this way, the structure of the degumming and inserting machine can be made more compact, and the operating efficiency of the degumming and inserting machine is improved.
  • the present application also provides a method for processing silicon wafers, using the degumming and inserting machine described in any one of the above embodiments to process silicon wafers.
  • the silicon wafer processing method includes the following steps:
  • Step 1 placing the material frame with the silicon wafer on the loading position of the degumming inserting machine
  • Step 2 using the grasping mechanism to grab and move the material frame containing the silicon wafers to the degumming mechanism, so as to degumming the silicon wafers to separate the silicon wafers from the crystal tray;
  • Step 3 using the grasping mechanism to grasp and remove the crystal support separated from the silicon wafer;
  • Step 4 using the unlocking mechanism to release the clamping and fixing of the silicon wafer by the material frame;
  • Step five using the inserting mechanism to disassemble the degummed silicon wafers.
  • Fig. 1 is a structural diagram of a degumming and inserting machine according to one or more embodiments.
  • Fig. 2 is a schematic structural view of a degumming and inserting machine according to one or more embodiments.
  • Fig. 3 is a schematic structural view of a degumming and inserting machine according to one or more embodiments.
  • FIG. 4 is a structural view of a material frame equipped with a silicon wafer and a crystal carrier according to one or more embodiments.
  • Fig. 5 is a structural diagram of a material frame according to one or more embodiments.
  • Figure 6 is a side view of a bezel according to one or more embodiments.
  • Figure 7 is a block diagram of a debonding mechanism according to one or more embodiments.
  • Figure 8 is a block diagram of a side nozzle according to one or more embodiments.
  • FIG. 9 is an enlarged view of point A shown in FIG. 8 .
  • Figure 10 is a block diagram of a bottom nozzle according to one or more embodiments.
  • Fig. 11 is a structural diagram of a blade insertion mechanism according to one or more embodiments.
  • Figure 12 is a block diagram of a debonding mechanism according to one or more embodiments.
  • Fig. 13 is a block diagram of a blade insertion mechanism according to one or more embodiments.
  • Figure 14 is a block diagram of an unlocking mechanism according to one or more embodiments.
  • Figure 15 is a block diagram of a grabbing mechanism according to one or more embodiments.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined.
  • a first feature being "on” or “under” a second feature may mean that the first and second features are in direct contact, or that the first and second features are indirect through an intermediary. touch.
  • “above”, “above” and “above” the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • “Below”, “beneath” and “beneath” the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
  • Fig. 1-Fig. 4 when processing silicon wafer 100, usually silicon strip is bonded on the crystal holder 200, then silicon strip is cut and processed so as to form silicon wafer 100, but, the silicon wafer 100 after processing is still glued.
  • the degumming and inserting machine provided by this application can separate the silicon wafer 100 from the crystal tray 200 without manually moving the silicon wafer 100, and divide the bonded silicon wafers 100 into single pieces. slice of silicon wafer 100.
  • the degumming and inserting machine provided by the present application includes a material frame 1, a grabbing mechanism 2, a degumming mechanism 3, an unlocking mechanism 8, an inserting mechanism 4, and a separation and conveying mechanism (not shown in the figure) ), a single-chip cleaning mechanism 5 and a drying mechanism (not shown).
  • the material frame 1 provided by the application is different from the existing material frame.
  • the existing material frame can only hold the crystal support 200, but the material frame 1 provided by the application can hold the silicon wafer 100. In this way, the crystal support 200 and the silicon wafer 100 can be clamped.
  • the material frame 1 can be directly used to transfer the silicon wafers 100 to the wafer inserting mechanism 4 .
  • the grasping mechanism 2 provided in the present application can grasp the material frame 1 and the crystal tray 200 respectively, and can transfer the material frame 1 and the crystal tray 200 individually or jointly.
  • the grasping mechanism 2 grabs and transfers the material frame 1 and the crystal holder 200 and the silicon wafer 100 arranged in the material frame 1 at the same time, and the crystal holder 200 and the silicon wafer 100 When separating, the grasping mechanism 2 can transport away the crystal tray 200 separately, and then transfer the material frame 1 holding the silicon wafer 100 .
  • the degumming mechanism 3 is used for degumming the silicon wafer 100 , and the silicon wafer 100 and the crystal tray 200 are separated in the degumming mechanism 3 .
  • a degumming agent such as lactic acid is provided in the degumming mechanism 3 , and according to the principle of similar compatibility, the adhesive between the silicon wafer 100 and the crystal tray 200 can be dissolved in the degumming agent, thereby realizing the degumming and separation of the silicon wafer 100 and the crystal tray 200 . Since the silicon wafer 100 is being transported, the material frame 1 clamps the silicon wafer 100, therefore, before the silicon wafer 100 is inserted, the unlocking mechanism 8 can be used to release the clamping and fixing of the material frame 1 to the silicon wafer 100, It facilitates the separation of adjacent silicon wafers 100 .
  • a degumming agent such as lactic acid
  • the inserting mechanism 4 is used to disassemble the degummed silicon wafers 100, so that the bonded silicon wafers 100 are separated into single-piece structures.
  • the thickness of the silicon wafer 100 separated into monolithic forms is extremely thin. Generally, the thickness of photovoltaic silicon wafers is between 0.13mm and 0.18mm, and the thickness of semiconductor silicon wafers is about 0.7mm. Therefore, the silicon wafers 100 separated into single pieces need to be individually conveyed by the separation conveying mechanism. Moreover, there is a certain amount of impurities on the single silicon wafer 100 , therefore, the silicon wafer 100 can be transported to the single wafer cleaning mechanism 5 to clean the silicon wafer 100 . After cleaning, the single silicon wafer 100 is sent to a drying mechanism for drying treatment.
  • the application sets the degumming mechanism 3 on one side of the inserting mechanism 4, and the degumming mechanism 3 and the inserting mechanism 4 are installed on the same horizontal plane, and the grabbing mechanism 2 is arranged on the degumming mechanism 3 and the top of the insert mechanism 4. In this way, the structure of the degumming and inserting machine can be made more compact, and the operating efficiency of the degumming and inserting machine is improved.
  • the method for processing the silicon wafer 100 by the degumming and inserting machine includes the following steps: firstly, placing the material frame 1 containing the silicon wafer 100 on the loading position 6 of the degumming and inserting machine. Then, the grasping mechanism 2 is used to grasp and move the material frame 1 containing the silicon wafer 100 to the degumming mechanism 3 to perform degumming treatment on the silicon wafer 100 so as to separate the silicon wafer 100 from the crystal tray 200 . Afterwards, the crystal carrier 200 separated from the silicon wafer 100 is grasped and removed by the grasping mechanism 2 . After that, the grabbing mechanism 2 is used to grab and move the material frame 1 containing the silicon wafer 100 to the inserting mechanism 4 .
  • the clamping and fixing of the silicon wafer 100 by the material frame 1 is released by using the unlocking mechanism 8 .
  • the degummed silicon wafer 100 is disassembled using the wafer insertion mechanism 4 .
  • the single silicon wafer 100 is cleaned and dried. It can be known from the above that the degumming and inserting machine provided by the present application does not need to manually carry the silicon wafer 100 during the whole process, thereby avoiding serious damage to the silicon wafer 100 and avoiding the corrosion of the human body by waste water.
  • the degumming and inserting machine provided by this application has a cache position between the degumming mechanism 3 and the inserting mechanism 4 7.
  • the buffer position 7 is used to place the material frame 1 holding the silicon wafer 100 or to place an empty material frame 1 .
  • the material frame 1 equipped with the degummed silicon wafer 100 can be placed on the buffer position 7 to wait for the subsequent insertion process, so as to avoid the unsmooth operation of the degumming insertion machine due to no place for the material frame 1 to be placed.
  • the degumming and inserting machine provided by the application can also be provided with the number of inserting mechanisms 4 greater than or equal to the number of degumming mechanisms 3 twice as much. That is, one degumming mechanism 3 corresponds to two or more inserting mechanisms 4, thus greatly improving the running smoothness and working efficiency of the degumming and inserting machine.
  • the material frame 1 includes a main frame body 11 , the main frame body 11 has a material trough 111 , and the silicon wafer 100 and the crystal holder 200 are installed in the material trough 111 .
  • the chute 111 has a sheet outlet 112 for passing individual silicon wafers 100 , so that the separated single silicon wafer 100 can leave the chute 111 directly from the sheet outlet 112 .
  • the two side walls of the trough 111 are provided with two opposite first clamping parts 12, the two first clamping parts 12 are used to clamp the crystal holder 200, and the first clamping part 12 passes through the first rotating shaft 13 It is rotatably connected to the main frame body 11, and by rotating the first rotating shaft 13 on both sides of the trough 111, the two first clamping parts 12 can be driven close to each other to clamp the crystal holder 200, or the two first clamping parts can be driven The holders 12 move away from each other to release the crystal holder 200 .
  • the two side walls of the trough 111 are also provided with two oppositely arranged second clamping parts 14, the second clamping parts 14 are rotatably connected to the main frame body 11 through the second rotating shaft 15, and the two sides of the material trough 111 are rotated.
  • the second rotating shaft 15 on the side can drive the two second clamping parts 14 to approach each other to clamp the silicon wafer 100 , or drive the two second clamping parts 14 to move away from each other to release the silicon wafer 100 . Since the silicon wafer 100 is placed under the crystal tray 200 during the transfer process of the silicon wafer 100 and the crystal tray 200 , therefore, in this embodiment, the second clamping portion 14 is disposed under the first clamping portion 12 .
  • crank connecting rod structure in order to drive the second rotating shaft 15 to rotate more smoothly, a crank connecting rod structure is also provided between the two oppositely disposed second clamping portions 14 .
  • the crank connecting rod structure includes sliding block 16 and sliding groove 17, and the crank connecting rod structure also includes a first connecting rod 18 and a second connecting rod 19, and the first connecting rod 18 is the one with the highest degree of freedom in the crank connecting rod structure.
  • Components play a key role in converting linear motion into circular motion.
  • the two ends of the first connecting rod 18 respectively hinge the sliding block 16 and the second connecting rod 19, and the second connecting rod 19 is fixedly connected to the second rotating shaft 15, when the sliding block 16 moves relative to the chute 17, the sliding block 16 drives the end of the first connecting rod 18 connected to the slider 16 to move linearly, and the first connecting rod 18 acts on the driving force of the slider 16 to the second connecting rod 19, so that the second connecting rod 19 drives the second rotating shaft 15 to move circular motion.
  • the degumming inserting machine only one set of sliders 16 and chute 17 are provided, and two sets of first connecting rods 18 and second connecting rods are respectively connected to the two sides of the slider 16 19.
  • the unlocking mechanism 8 can realize the rotation of the second rotating shaft 15 by driving the sliding block 16 to slide and cooperate with the chute 17 , thereby unlocking the silicon wafer 100 from the material frame 1 .
  • crank connecting rod structure can also be arranged between two opposite first clamping parts 12, the working principle of the crank connecting rod structure is the same as that of the crank connecting rod structure arranged between the second clamping parts 14. The principle is the same.
  • the grabbing mechanism 2 includes a material frame manipulator 21, a lifting assembly 22, a longitudinal guide rail 23, and a transverse guide rail 24.
  • the guide rail 23 is slidably installed on the transverse guide rail 24, and motors are installed on the lifting assembly 22 and the longitudinal guide rail 23, which can realize automatic sliding.
  • the degumming mechanism 3 provided in this application is used for the degumming process of the silicon wafer 100 .
  • the degumming mechanism 3 includes a degumming tank 31 , an acid storage tank 32 and a water storage tank 33 .
  • the acid storage tank 32 and the water storage tank 33 are all connected to the degumming tank 31 through the pipeline 37, and the water storage tank 33 is used to deliver water to the degumming tank 31.
  • the silicon wafer 100 can be soaked in water earlier, so that it is beneficial to clean the The cutting suspension, silicon powder and water on the surface of the silicon wafer 100 can soften the colloid bonded on the silicon wafer 100 .
  • the acid storage tank 32 is used to transport degumming liquid such as lactic acid into the degumming tank 31 , and the colloid bonded to the silicon wafer 100 will completely dissolve in the lactic acid under the action of the degumming liquid.
  • the pipeline 37 is used to control water intake or drainage, and the pipeline 37 includes at least one discharge pipeline, one liquid inlet pipeline, one liquid level detector, and one overflow pipeline.
  • the pipeline 37 between the degumming tank 31 and the acid storage tank 32 is provided with a first control assembly 35a, and the first control assembly 35a can control the communication between the degumming tank 31 and the acid storage tank 32. broken.
  • the pipeline 37 between the degumming tank 31 and the water storage tank 33 is provided with a second control assembly 36 a, and the second control assembly 36 a can control the connection between the degumming tank 31 and the water storage tank 33 .
  • the second control assembly 36a controls the opening of the pipeline 37 between the degumming tank 31 and the water storage tank 33, and the first control assembly 35a controls the degumming tank 31 and the acid storage tank
  • the pipeline 37 between 32 is closed, and at this moment, the water storage tank 33 delivers water to the degumming tank 31, and the silicon wafer 100 is soaked in water.
  • the colloid bonded on the silicon wafer 100 needs to be dissolved, first drain the water in the degumming tank 31, and then, the first control assembly 35a controls the pipeline 37 between the degumming tank 31 and the acid storage tank 32 to open , and the second control assembly 36a controls the pipeline 37 between the degumming tank 31 and the water storage tank 33 to close, at this time, the acid storage tank 32 transports degumming solutions such as lactic acid to the degumming tank 31, and the silicon wafer 100 is soaked in the degumming solution for degumming .
  • the immersion time of the silicon wafer 100 in water is 5 minutes
  • the immersion time of the silicon wafer 100 in lactic acid is 10 minutes.
  • the degumming mechanism 3 provided in this application only needs one degumming tank 31 to realize the soaking of the silicon wafer 100 in water and lactic acid.
  • the number of degumming tanks 31 provided by the degumming mechanism 3 is greatly reduced, the volume of the degumming mechanism 3 is reduced, and the manufacturing cost of the degumming mechanism 3 is reduced.
  • two or three degumming tanks 31 may also be provided on the degumming mechanism 3 to realize synchronous degumming of multiple silicon wafers 100 .
  • the degumming tank 31 will be arranged above the acid storage tank 32 and the water storage tank 33, so that the footprint of the whole degumming mechanism 3 Smaller and more compact.
  • the degumming tank 31 , the acid storage tank 32 and the water storage tank 33 may also be arranged on the same plane.
  • the first control assembly 35 a includes a first liquid pump 35 capable of delivering the liquid in the acid storage tank 32 to the degumming tank 31 .
  • the first liquid pump 35 can quickly transport the liquid in the acid storage tank 32 to the degumming tank 31 , which improves the degumming efficiency of the degumming mechanism 3 .
  • the second control assembly 36 a includes a second liquid pump 36 capable of delivering the liquid in the water storage tank 33 to the degumming tank 31 .
  • the second liquid pump 36 can quickly transport the liquid in the water storage tank 33 to the degumming tank 31 , which also improves the degumming efficiency of the degumming mechanism 3 .
  • the degumming tank 31 is provided with a spray pipe 34
  • the spray pipe 34 is provided with a plurality of spray pipes evenly spaced along the length direction. Hole 341.
  • the injection pipe 34 is connected to the water storage tank 33 through a pipeline 37
  • the second control assembly 36a includes a second liquid pump 36, the second liquid pump 36 can deliver the liquid in the water storage tank 33 to the injection pipe 34, and make the liquid flow from the injection hole 341 Spray toward between adjacent silicon wafers 100 .
  • the liquid is ejected from the ejection hole 341 , it has a certain impact force.
  • the silicon wafers 100 that were tightly attached together will be scattered.
  • the injection holes 341 are uniformly distributed on the injection pipe 34, therefore, the gaps between different silicon wafers 100 are impacted by the liquid in the same way, and at this time, the new gaps formed between different silicon wafers 100 are also the same, that is, , the silicon wafer 100 is evenly dispersed under the impact of the liquid.
  • the spray pipe 34 is arranged in the degumming tank 31
  • the second liquid pump 36 is connected to the water storage tank 33 and the spray pipe 34 through the pipeline 37
  • the second liquid pump 36 can deliver the liquid in the water storage tank 33 to the spray pipe 34 .
  • the injection pipe 34 can also directly draw water from the degumming tank 31 through the second liquid pump 36 , so as to realize the water circulation inside the degumming tank 31 .
  • the injection pipe 34 includes a pair of side nozzles 342 rotatably disposed on opposite sides of the degumming tank 31 , and a bottom nozzle 343 disposed at the bottom of the degumming tank 31 .
  • the blade insertion mechanism 4 includes a transmission component 41 , a clamping component 42 and a water spray component 43 .
  • the silicon wafer 100 is placed together with the frame 1 on the transfer assembly 41 , and then the unlocking mechanism 8 unlocks the locking of the frame 1 to the silicon wafer 100 , and the transfer assembly 41 can transfer the silicon wafer 100 .
  • a clamping assembly 42 is also provided on both sides of the transmission assembly 41, and the clamping assembly 42 The position is higher than that of the transfer assembly 41 .
  • the clamping assembly 42 can not only clamp the silicon wafer 100 from both sides, but also transfer the silicon wafer 100 to the water spray assembly 43 located at one end of the transmission assembly 41 synchronously with the transmission assembly 41.
  • the water spray assembly 43 can blow water on the silicon wafer 100, In order to separate adjacent silicon wafers 100 bonded together.
  • the clamping assembly 42 includes a side belt transmission structure 421 and a clamping drive unit 422, the side belt transmission structure 421 is arranged on both sides of the transmission assembly 41, and the clamping drive unit 422 is connected to the side
  • the belt conveying structure 421 can drive the side belt conveying structure 421 to approach or move away from each other, so as to clamp or loosen the silicon wafer 100 .
  • the belt part of the side belt transmission structure 421 clamps the silicon wafer 100
  • the clamping driving unit 422 may be a driving cylinder or a driving motor, which are not listed here.
  • the driving cylinder drives the opposite side belt conveying structures 421 to approach or move away from each other, so as to clamp or loosen the silicon wafer 100 .
  • the main structure of the conveying unit 41 is the bottom belt conveying structure 411 , and the silicon wafer 100 is placed on the belt part of the bottom belt conveying structure 411 .
  • a larger opening is provided at the bottom of the material frame 1 , and the bottom belt conveying structure 411 can pass through the opening at the bottom of the material frame 1 .
  • the bottom belt conveying structure 411 directly passes through the opening at the bottom of the material frame 1 and contacts the bottom of the silicon wafer 100, and then unlocks the material frame 1 to the silicon wafer 100.
  • the locking of the wafer 100 makes the silicon wafer 100 placed on the bottom belt conveying structure 411 , while the material frame 1 is placed directly on the horizontal plane, thereby realizing the separation of the material frame 1 and the silicon wafer 100 .
  • the side of the material frame 1 is also provided with a larger opening, and the clamping assembly 42 can pass through the opening at the side of the material frame 1 .
  • the water spray assembly 43 is usually arranged on one side of the side belt conveying structure 421, for the water spray assembly 43 to blow water to the silicon wafer 100 more conveniently, avoiding the side belt conveying structure 421 to the water spray assembly. 43 causes interference, the bottom belt transmission structure 411 and the side belt transmission structure 421 of the present application are partly staggered, specifically, the end of the bottom belt transmission structure 411 close to the water spray assembly 43 is closer to the water spray assembly than the side belt transmission structure 421 One end of 43 protrudes to form the front area 412.
  • the water spray assembly 43 is arranged on the side of the front area 412.
  • the bottom belt transmission structure 411 continues to move forward with the silicon wafer 100. distance, so that the silicon wafers 100 are arranged obliquely, thereby increasing the gap between the silicon wafers 100 and facilitating the separation of the silicon wafers 100 by the water spray assembly 43 .
  • the grabbing mechanism 2 is used to grab and move the material frame 1 containing the silicon wafer 100 to the degumming mechanism 3 to perform degumming treatment on the silicon wafer 100 and separate the silicon wafer 100 from the crystal tray 200 .
  • the crystal carrier 200 separated from the silicon wafer 100 is grasped and removed by the grasping mechanism 2 .
  • water is sprayed between the adjacent silicon wafers 100 by using the spray pipe 34 so that the adjacent silicon wafers 100 are evenly dispersed.
  • the gripping mechanism 2 is used to grab and move the material frame 1 containing the silicon wafer 100 to the buffer position 7 and wait. After the insertion process of the previous silicon wafer 100 is completed, the grasping mechanism 2 is used to grab and move the material frame 1 containing the silicon wafer 100 to the insertion mechanism 4 .

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Abstract

一种脱胶插片机(300)及硅片加工方法。该脱胶插片机包括料框(1)、抓取机构(2)、脱胶机构(3)、解锁机构(8)和插片机构(4)。料框(1)用于放置并夹持粘接有晶托(200)的硅片(100)，抓取机构(2)用于抓取及转运料框(1)或者晶托(200)，脱胶机构(3)用于对硅片(100)进行脱胶处理，解锁机构(8)用于解除料框(1)对硅片(100)的夹持固定，插片机构(4)用于对脱胶后的硅片(100)进行拆分处理。

Description

脱胶插片机及硅片加工方法
相关申请
本申请要求2021年7月1日申请的，申请号为202110746252.9，发明名称为“脱胶插片机”以及2021年8月2日申请的，申请号为202110883129.1，发明名称为“脱胶插片机及硅片加工方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及硅片制造技术领域，特别是涉及一种脱胶插片机及硅片加工方法。
背景技术
光伏、半导体硅片是由线切机将粘在晶托上的硅片切割而成，在相关技术的工艺中，线切后的硅片仍然粘在晶托上，由人工或者多功能运输车(AGV,Automated Guided Vehicle)运输到单独脱胶机进行脱胶，脱胶后的硅片由人从含有酸的水中捞出放入弹夹，弹夹放入水箱，再由人或AGV运输水箱到插片机，人工将弹夹拿出放入插片机进行插片。然而，采用人工搬运硅片存在以下问题：第一，需要人工从水中捞片，水中含大量硅粉和少量酸，对人体伤害很大；第二，由于硅片非常薄和脆，人工捞片过程中轻微的碰撞就会造成硅片崩边和碎片等不良产品。第三，需要将硅片运转到弹夹，由于人工搬运需要长时间进行运输，硅片之间间隙会减小，在插片阶段需要大的分片力才能将硅片分开，大的分片力容易造成产品隐裂甚至产生碎片。
发明内容
根据本申请的各种实施例，提供一种脱胶插片机及硅片加工方法。
本申请提供一种脱胶插片机，包括料框、抓取机构、脱胶机构、解锁机构和插片机构。料框用于放置并夹持粘接有晶托的硅片，抓取机构用于抓取及转运料框或者晶托，脱胶机构用于对硅片进行脱胶处理，解锁机构用于解除料框对硅片的夹持固定，插片机构用于对脱胶后的硅片进行拆分处理。
在一实施例中，插片机构包括传送组件、夹紧组件和喷水组件。传送组件用于硅片的放置并能够对硅片进行传送。夹紧组件设于传送组件的两侧，夹紧组件能够夹紧硅片并与传送组件同步传送硅片。喷水组件设置于传送组件一端，传送组件与夹紧组件配合能够将硅片传送至传送组件靠近喷水组件的一端，喷水组件能够对硅片吹水，以使硅片与相邻的硅片分离。
在一实施例中，夹紧组件包括侧部皮带传送结构以及夹紧驱动单元，侧部皮带传送结构设于传送组件的两侧，夹紧驱动单元连接侧部皮带传送结构，并能够驱动侧部皮带传送结构相互靠近或者远离，以夹紧或者松开硅片。
在一实施例中，传送组件包括底部皮带传送结构，底部皮带传送结构靠近喷水组件的一端相对于侧部皮带传送结构靠近喷水组件的一端凸出设置以形成前置区，喷水组件设于前置区的侧面。
在一实施例中，脱胶机构包括脱胶槽、储酸槽和储水槽，储酸槽和储水槽均通过管道连通脱胶槽，脱胶槽和储酸槽之间的管道上设有第一控制组件，第一控制组件能够控制脱胶槽与储酸槽之间的通断；脱胶槽和储水槽之间的管道上设有第二控制组件，第二控制组件能够控制脱胶槽与储水槽之间的通断。
在一实施例中，脱胶槽设有喷射管，喷射管沿着长度方向设有均匀间隔分布的多个喷射孔；第二控制组件包括第二液泵，第二液泵能够将液体输送至喷射管，并使液体从喷射孔朝向相邻的硅片之间喷射。
在一实施例中，料框包括主框体和两个相对设置的第二夹持部。主框体设有料槽，料槽具有出片口，出片口用于通过单个硅片。第二夹持部通过第二转轴可转动地连接于主框 体，通过转动第二转轴，两个第二夹持部能够相互靠近或者远离，以夹持或释放硅片。
在一实施例中，脱胶机构与插片机构之间设有缓存位，缓存位用于放置夹持有硅片的料框或者放置空的料框。如此，装设有脱胶完成的硅片的料框可先放置在缓存位上等待后续的插片过程，避免料框无处放置而导致脱胶插片机运行不畅。
在一实施例中，脱胶机构设于插片机构的一侧，且脱胶机构与插片机构装设于同一水平面上，抓取机构设置于脱胶机构与插片机构的上方。如此，可使脱胶插片机的结构更加紧凑，提高了脱胶插片机的运转效率。
本申请还提供一种硅片加工方法，采用以上任意一个实施例所述的脱胶插片机对硅片进行加工，该硅片加工方法包括以下步骤：
步骤一，将装有硅片的料框放置于脱胶插片机的上料位；
步骤二，利用抓取机构抓取并移动装有硅片的料框至脱胶机构，以对硅片进行脱胶处理以使硅片与晶托分离；
步骤三，利用抓取机构抓取并移走与硅片分离的晶托；
步骤四，利用解锁机构解除料框对硅片的夹持固定；
步骤五，利用插片机构对脱胶后的硅片进行拆分处理。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更好地描述和说明这里公开的那些申请的实施例和/或示例，可以参考一幅或多幅附图。用于描述附图的附加细节或示例不应当被认为是对所公开的申请、目前描述的实施例和/或示例以及目前理解的这些申请的最佳模式中的任何一者的范围的限制。
图1为根据一个或多个实施例的脱胶插片机的结构图。
图2为根据一个或多个实施例的脱胶插片机的结构示意图。
图3为根据一个或多个实施例的脱胶插片机的结构示意图。
图4为根据一个或多个实施例的装设有硅片和晶托的料框的结构图。
图5为根据一个或多个实施例的料框的结构图。
图6为根据一个或多个实施例的料框的侧视图。
图7为根据一个或多个实施例的脱胶机构的结构图。
图8为根据一个或多个实施例的侧喷管的结构图。
图9为图8所示A处的放大图。
图10为根据一个或多个实施例的底喷管的结构图。
图11为根据一个或多个实施例的插片机构的结构图。
图12为根据一个或多个实施例的脱胶机构的结构图。
图13为根据一个或多个实施例的插片机构的结构图。
图14为根据一个或多个实施例的解锁机构的结构图。
图15为根据一个或多个实施例的抓取机构的结构图。
附图标记：100、硅片；200、晶托；300、脱胶插片机；1、料框；11、主框体；111、料槽；112、出片口；12、第一夹持部；13、第一转轴；14、第二夹持部；15、第二转轴；16、滑块；17、滑槽；18、第一连杆；19、第二连杆；2、抓取机构；21、料框机械手；22、升降组件；23、纵向导轨；24、横向导轨；3、脱胶机构；31、脱胶槽；32、储酸槽；33、储水槽；34、喷射管；341、喷射孔；342、侧喷管；343、底喷管；35a、第一控制组件；35、第一液泵；36a、第二控制组件；36、第二液泵；37、管道；4、插片机构；41、传送组件；411、底部皮带传送结构；412、前置区；42、夹紧组件；421、侧部皮带传送结构；422、夹紧驱动单元；43、喷水组件；5、单片清洗机构；6、上料位；7、缓存位；8、解锁机构。
具体实施方式
下面将结合本申请实施方式中的附图，对本申请实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本申请所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
除非另有定义，本申请所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。本申请所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参阅图1-图4，在加工硅片100时，通常将硅条粘接在晶托200上，然后对硅条进行切割加工从而形成硅片100，但是，加工后的硅片100仍然粘接在晶托200上，本申请提供的脱胶插片机可在不需要人工移动硅片100的情况下，实现硅片100与晶托200分离，并将贴合在一起的硅片100分成单片的硅片100。
如图1-图4以及图13所示，本申请提供的脱胶插片机包括料框1、抓取机构2、脱胶机构3、解锁机构8、插片机构4、分离输送机构(图未示)、单片清洗机构5以及烘干机构(图未示)。本申请提供的料框1不同于现有的料框，现有的料框只能夹持晶托200，而本申请提供的料框1能够夹持硅片100，如此，晶托200和硅片100分离之后，不需要将硅片100从料框1中取出，而是可直接利用料框1将硅片100传送至插片机构4。并且，本申请提供的抓取机构2能够分别抓取料框1和晶托200，并可单独或者共同转运料框1 和晶托200。具体而言，晶托200与硅片100未分离时，抓取机构2同时抓取并转运料框1以及设于料框1内的晶托200和硅片100，晶托200与硅片100分离时，抓取机构2可将晶托200单独运走，再传送夹持有硅片100的料框1。脱胶机构3用于对硅片100进行脱胶处理，硅片100与晶托200在脱胶机构3实现分离。通常，脱胶机构3内设有乳酸等脱胶剂，根据相似相溶原理，硅片100与晶托200之间的胶粘剂可溶解于脱胶剂，从而实现硅片100与晶托200的脱胶分离。由于硅片100在传送过程中，料框1是夹持住硅片100的，因此，在硅片100进行插片之前，可利用解锁机构8解除料框1对硅片100的夹持固定，便于相邻硅片100的分离。而插片机构4用于对脱胶后的硅片100进行拆分处理，使贴合在一起的硅片100分离成单片的结构。分离成单片形式的硅片100厚度极薄，通常，光伏硅片的厚度在0.13mm到0.18mm之间，半导体硅片的厚度在0.7mm左右。因此，分离成单片形式的硅片100需要通过分离输送机构单独传送。并且，单片的硅片100上有一定量的杂质，因此，可将硅片100输送至单片清洗机构5对硅片100进行清洗。清洗完之后，再将单片的硅片100传送至烘干机构进行烘干处理。为了提高脱胶插片机的运转效率，本申请将脱胶机构3设于插片机构4的一侧，且脱胶机构3与插片机构4装设于同一水平面上，抓取机构2设置于脱胶机构3与插片机构4的上方。如此，可使脱胶插片机的结构更加紧凑，提高了脱胶插片机的运转效率。
具体地，上述脱胶插片机对硅片100进行加工的方法包括以下步骤：首先，将装有硅片100的料框1放置于脱胶插片机的上料位6。然后利用抓取机构2抓取并移动装有硅片100的料框1至脱胶机构3，以对硅片100进行脱胶处理以使硅片100与晶托200分离。之后，利用抓取机构2抓取并移走与硅片100分离的晶托200。再之后，利用抓取机构2抓取并移动装有硅片100的料框1至插片机构4。然后，利用解锁机构8解除料框1对硅片100的夹持固定。之后，利用插片机构4对脱胶后的硅片100进行拆分处理。再之后，对单个硅片100进行清洗和烘干。由以上可知，本申请提供的脱胶插片机全程不需要人工搬运硅片100，进而避免了硅片100的严重损坏，以及避免了人体受到废水腐蚀。
如图1-图3所示，由于对硅片100插片的过程在对硅片100脱胶的过程之后，并且，插片机构4的插片过程所需的时间大于脱胶机构3脱胶所需的时间，因此，硅片100脱完胶之后，无法立即进行插片处理，也即，硅片100脱完胶之后需要等待一段时间才可进行脱胶处理。如此，会影响脱胶插片机整体的运作流畅程度，而为了提高脱胶插片机的运作流畅程度，本申请提供的脱胶插片机，在脱胶机构3与插片机构4之间设有缓存位7，缓存位7用于放置夹持有硅片100的料框1或者放置空的料框1。如此，装设有脱胶完成的硅片100的料框1可先放置在缓存位7上等待后续的插片过程，避免料框1无处放置而导致脱胶插片机运行不畅。进一步地，为了提高脱胶插片机的工作效率，减少料框1在插片前的等待时间，本申请提供的脱胶插片机还可设置插片机构4的数量大于或等于脱胶机构3的数量的两倍。也即，一个脱胶机构3对应两个或两个以上的插片机构4，如此，大大提高了脱胶插片机的运行流畅程度和工作效率。
下面对脱胶插片机的具体结构进行进一步的分析。
在一实施例中，如图5所示，料框1包括主框体11，主框体11具有料槽111，硅片100以及晶托200装设在料槽111内。料槽111具有出片口112，出片口112用于通过单个硅片100，如此，分离出的单个硅片100可直接从出片口112离开料槽111。料槽111的两侧壁上设有两个相对设置的第一夹持部12，两个第一夹持部12用于夹持晶托200，而第一夹持部12通过第一转轴13可转动地连接于主框体11，通过转动料槽111两侧的第一转轴13，可驱动两个第一夹持部12相互靠近以夹持住晶托200，或驱动两个第一夹持部12相互远离以释放晶托200。料槽111的两侧壁上还设有两个相对设置的第二夹持部14，第二夹持部14通过第二转轴15可转动地连接于主框体11，通过转动料槽111两侧的第二转轴15，可驱动两个第二夹持部14相互靠近以夹持住硅片100，或驱动两个第二夹持部14相互远离以释放硅片100。由于硅片100与晶托200在传送过程中，硅片100设置 于晶托200的下方，因此，在本实施例中，第二夹持部14设置于第一夹持部12的下方。
进一步地，如图6所示，为了更顺畅地驱动第二转轴15转动，在两个相对设置的第二夹持部14之间还设置了曲柄连杆结构。曲柄连杆结构包括滑动配合的滑块16和滑槽17，且曲柄连杆结构还包括第一连杆18和第二连杆19，第一连杆18作为曲柄连杆结构里自由度最高的部件，起到将直线运动转化为圆周运动的关键作用。具体地，第一连杆18的两端分别铰接滑块16与第二连杆19，并且，第二连杆19固定连接第二转轴15，当滑块16相对滑槽17运动时，滑块16驱动第一连杆18连接滑块16的一端作直线运动，而第一连杆18将滑块16的驱动力作用于第二连杆19，使第二连杆19带动第二转轴15作圆周运动。为了使脱胶插片机的结构更加紧凑，在本实施例中，只设置了一组滑块16和滑槽17，滑块16的两侧分别连接两组第一连杆18和第二连杆19，如此，滑块16在运动时，可同时驱动两组第一连杆18和两组第二连杆19移动，进而，同时驱动两个相对设置的第二转轴15带动第二夹持部14发生转动，以夹紧或者松开硅片100。根据上述料框1的结构可知，解锁机构8通过驱动滑块16与滑槽17滑动配合，便可实现第二转轴15的转动，进而实现料框1对硅片100的解除锁定。
同样地，两个相对设置的第一夹持部12之间也可以设置曲柄连杆结构，该曲柄连杆结构的工作原理与设于第二夹持部14之间的曲柄连杆结构的工作原理相同。
如图15所示，抓取机构2包括料框机械手21、升降组件22、纵向导轨23、横向导轨24，料框机械手21安装于升降组件22上，升降组件22滑动安装纵向导轨23上，纵向导轨23滑动安装于横向导轨24上，且升降组件22、纵向导轨23上均安装有电机，可实现自动滑动。
本申请提供的脱胶机构3用于硅片100的脱胶处理。如图7和图12所示，脱胶机构3包括脱胶槽31、储酸槽32和储水槽33。储酸槽32和储水槽33均通过管道37连通脱胶槽31，储水槽33用于向脱胶槽31内输送水，在脱胶之前，可先将硅片100浸泡在水中，如此，有利于清洗掉硅片100表面的切割悬浮液和硅粉，并且水能够软化硅片100上粘接的胶体。储酸槽32用于向脱胶槽31内输送乳酸等脱胶液，粘接在硅片100上的胶体在脱胶液的作用下，会完全溶解于乳酸。
其中，管道37用于控制进水或排水，管道37包括至少有一个排液管路，一个进液管路，一个液位检测器，一个溢流管路。
如图7和图12所示，脱胶槽31和储酸槽32之间的管道37上设有第一控制组件35a，第一控制组件35a能够控制脱胶槽31与储酸槽32之间的通断。脱胶槽31和储水槽33之间的管道37上设有第二控制组件36a，第二控制组件36a能够控制脱胶槽31与储水槽33之间的通断。当需要对硅片100上粘接的胶体进行软化时，第二控制组件36a控制脱胶槽31与储水槽33之间的管道37打开，并且，第一控制组件35a控制脱胶槽31与储酸槽32之间的管道37关闭，此时，储水槽33向脱胶槽31输送水，硅片100浸泡在水中。之后，当需要对硅片100上粘接的胶体进行溶解时，先排掉脱胶槽31内的水，然后，将第一控制组件35a控制脱胶槽31与储酸槽32之间的管道37打开，并且，第二控制组件36a控制脱胶槽31与储水槽33之间的管道37关闭，此时，储酸槽32向脱胶槽31输送乳酸等脱胶液，硅片100浸泡在脱胶液中进行脱胶。通常，硅片100在水中的浸泡时间是5分钟，硅片100在乳酸中的浸泡时间是10分钟。本申请提供的脱胶机构3，只需一个脱胶槽31，便可实现硅片100的浸泡水和浸泡乳酸。大大减少了脱胶机构3所设的脱胶槽31的数量，减小了脱胶机构3的体积，并减小了脱胶机构3的制造成本。当然，为了加快脱胶机构3脱胶的速率，还可以在脱胶机构3上设置两个或者三个脱胶槽31，实现多个硅片100的同步脱胶。
通常，如图7所示，为了硅片100在脱胶槽31内的取放，会将脱胶槽31设置在储酸槽32和储水槽33的上方，如此设置，整个脱胶机构3的占地面积更小且结构更加紧凑。当然，也不限于此，也可将脱胶槽31、储酸槽32和储水槽33设置在同一平面上。
如图7所示，当脱胶槽31设置在储酸槽32和储水槽33的上方时，则需要在脱胶槽31与储酸槽32之间以及脱胶槽31与储水槽33之间设置液泵。具体地，第一控制组件35a包括第一液泵35，第一液泵35能够将储酸槽32内的液体输送到脱胶槽31。第一液泵35能够将储酸槽32内的液体快速输送至脱胶槽31内，提高了脱胶机构3的脱胶效率。第二控制组件36a包括第二液泵36，第二液泵36能够将储水槽33内的液体输送到脱胶槽31。第二液泵36能够将储水槽33内的液体快速输送至脱胶槽31内，也提高了脱胶机构3的脱胶效率。
进一步地，如图8-图10所示，为了均匀分散贴合在一起的硅片100，脱胶槽31内设有喷射管34，喷射管34沿着长度方向设有均匀间隔分布的多个喷射孔341。喷射管34通过管道37连接储水槽33，且第二控制组件36a包括第二液泵36，第二液泵36能够将储水槽33内的液体输送至喷射管34，并使液体从喷射孔341朝向相邻的硅片100之间喷射。液体从喷射孔341喷出时具有一定的冲击力，当液体喷射入相邻的硅片100之间的间隙时，原本紧紧贴合在一起的硅片100会被冲散开。而喷射孔341均匀分布于喷射管34上，因此，不同硅片100之间的间隙受到液体的冲击是相同的，此时，不同硅片100之间形成的新的间隙也是相同的，也即，硅片100在液体的冲击下被均匀分散开。
具体地，喷射管34设于脱胶槽31内，第二液泵36通过管道37连接储水槽33和喷射管34，第二液泵36能够将储水槽33内的液体输送到喷射管34。但不限于此，喷射管34还可以通过第二液泵36直接从脱胶槽31内抽取水，从而实现脱胶槽31内部的水循环。进一步地，喷射管34包括可转动地设置于脱胶槽31的相对的两侧的一对侧喷管342，以及设置于脱胶槽31底部的底喷管343。
在一实施例中，如图11、图12-图13所示，插片机构4包括传送组件41、夹紧组件42和喷水组件43。硅片100与料框1一起放置于传送组件41，之后，解锁机构8解锁料框1对硅片100的锁定，传送组件41可对硅片100进行传送。为了配合传送组件41对硅片100的传送，并且使得硅片100在插片机构4内的传送更加稳定，在传送组件41的两侧位置还设有夹紧组件42，且夹紧组件42的位置高于传送组件41的位置。夹紧组件42不仅可以从两侧夹紧硅片100，还可以与传送组件41同步传送硅片100至位于传送组件41一端的喷水组件43，喷水组件43能够对硅片100吹水，以使贴合在一起的相邻的硅片100分离。
进一步地，如图11所示，夹紧组件42包括侧部皮带传送结构421以及夹紧驱动单元422，侧部皮带传送结构421设于传送组件41的两侧，夹紧驱动单元422连接侧部皮带传送结构421，并能够驱动侧部皮带传送结构421相互靠近或者远离，以夹紧或者松开硅片100。具体地，在传送过程中，侧部皮带传送结构421的皮带部分夹紧硅片100，而夹紧驱动单元422可以是驱动气缸或者驱动电机，在此不一一例举。驱动气缸驱动相对设置的侧部皮带传送结构421相互靠近或者远离，以夹紧或者松开硅片100。
如图11所示，而传送组件41的主要结构为底部皮带传送结构411，且硅片100放置于底部皮带传送结构411的皮带部分。为了将硅片100更好地放置在底部皮带传送结构411上，料框1的底部设有较大的开口，底部皮带传送结构411能够穿过料框1底部的开口。当装设有硅片100的料框1放置在传送组件41上时，底部皮带传送结构411直接穿过料框1底部的开口并接触到硅片100的底部，之后，解锁料框1对硅片100的锁定，使得硅片100放置在底部皮带传送结构411上，而料框1直接放置在水平面上，从而实现了料框1与硅片100的分离。同样地，为了夹紧组件42更好地夹住硅片100，料框1的侧部也设有较大的开口，夹紧组件42能够穿过料框1侧部的开口。
如图11所示，喷水组件43通常设于侧部皮带传送结构421的一侧，为了喷水组件43更方便地对硅片100进行吹水，避免侧部皮带传送结构421对喷水组件43造成干涉，本申请的底部皮带传送结构411与侧部皮带传送结构421部分错开设置，具体地，底部皮带传送结构411靠近喷水组件43的一端相对于侧部皮带传送结构421靠近喷水组件43的一 端凸出设置以形成前置区412，喷水组件43设于前置区412的侧面，当侧部皮带传送结构421停止运动时，底部皮带传送结构411带着硅片100继续前进一段距离，使得硅片100倾斜设置，从而增大了硅片100之间的间隙，有利于喷水组件43对硅片100的分离。
下面对本申请提供的脱胶插片机的工作原理进行进一步的说明。
首先，将装有硅片100的料框1放置于脱胶插片机的上料位6。然后利用抓取机构2抓取并移动装有硅片100的料框1至脱胶机构3，以对硅片100进行脱胶处理并使硅片100与晶托200分离。之后，利用抓取机构2抓取并移走与硅片100分离的晶托200。然后，利用喷射管34向相邻的硅片100之间喷射水，以使相邻的硅片100均匀分散开。假如上一个硅片100的插片过程还未完成，则利用抓取机构2抓取并移动装有硅片100的料框1至缓存位7等待。上一个硅片100的插片过程完成之后，利用抓取机构2抓取并移动装有硅片100的料框1至插片机构4。然后，使底部皮带传送结构411直接穿过料框1底部的开口并接触到硅片100的底部，之后，使侧部皮带传送结构421直接穿过料框1侧部的开口并夹紧硅片100的侧部，然后，解锁料框1对硅片100的锁定，使得硅片100放置在底部皮带传送结构411上，而料框1直接放置在水平面上，从而实现了料框1与硅片100的分离。之后，利用插片机构4对脱胶后的硅片100进行拆分处理。再之后，对单个硅片100进行清洗和烘干。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种脱胶插片机，其特征在于，包括：
    料框，用于放置并夹持粘接有晶托的硅片；
    抓取机构，用于抓取及转运料框或者晶托；
    脱胶机构，用于对硅片进行脱胶处理；
    解锁机构，用于解除所述料框对所述硅片的夹持固定；以及，
    插片机构，用于对脱胶后的硅片进行拆分处理。
  2. 根据权利要求1所述的脱胶插片机，其中，所述料框包括：
    主框体，设有料槽，所述料槽具有出片口，所述出片口用于通过单个硅片；
    两个相对设置的第二夹持部，所述第二夹持部通过第二转轴可转动地连接于所述主框体，通过转动所述第二转轴，两个所述第二夹持部能够相互靠近或者远离，以夹持或释放硅片。
  3. 根据权利要求1所述的脱胶插片机，其中，所述脱胶机构包括脱胶槽、储酸槽和储水槽，所述储酸槽和所述储水槽均通过管道连通所述脱胶槽，所述脱胶槽和所述储酸槽之间的管道上设有第一控制组件，所述第一控制组件能够控制所述脱胶槽与所述储酸槽之间的通断；所述脱胶槽和所述储水槽之间的管道上设有第二控制组件，所述第二控制组件能够控制所述脱胶槽与所述储水槽之间的通断。
  4. 根据权利要求3所述的脱胶插片机，其中，所述脱胶槽设有喷射管，所述喷射管沿着长度方向设有均匀间隔分布的多个喷射孔；所述第二控制组件包括第二液泵，所述第二液泵能够将液体输送至所述喷射管，并使所述液体从所述喷射孔朝向相邻的硅片之间喷射。
  5. 根据权利要求1所述的脱胶插片机，其中，所述插片机构包括：
    传送组件，用于硅片的放置并能够对硅片进行传送；
    夹紧组件，设于所述传送组件的两侧，所述夹紧组件能够夹紧所述硅片并与所述传送组件同步传送所述硅片；以及，
    喷水组件，设置于所述传送组件一端，所述传送组件与所述夹紧组件配合能够将所述硅片传送至所述传送组件靠近所述喷水组件的一端，所述喷水组件能够对所述硅片吹水，以使所述硅片与相邻的所述硅片分离。
  6. 根据权利要求5所述的脱胶插片机，其中，所述夹紧组件包括侧部皮带传送结构以及夹紧驱动单元，所述侧部皮带传送结构设于所述传送组件的两侧，所述夹紧驱动单元连接所述侧部皮带传送结构，并能够驱动所述侧部皮带传送结构相互靠近或者远离，以夹紧或者松开所述硅片。
  7. 根据权利要求6所述的脱胶插片机，其中，所述传送组件包括底部皮带传送结构，所述底部皮带传送结构靠近所述喷水组件的一端相对于所述侧部皮带传送结构靠近所述喷水组件的一端凸出设置以形成前置区，所述喷水组件设于所述前置区的侧面。
  8. 根据权利要求1所述的脱胶插片机，其中，所述脱胶机构与所述插片机构之间设有缓存位，所述缓存位用于放置夹持有硅片的所述料框或者放置空的所述料框。
  9. 根据权利要求1所述的脱胶插片机，其中，所述脱胶机构设于所述插片机构的一侧，且所述脱胶机构与所述插片机构装设于同一水平面上，所述抓取机构设置于所述脱胶机构与所述插片机构的上方。
  10. 一种硅片加工方法，采用如权利要求1-9任意一项所述的脱胶插片机对硅片进行加工，其特征在于，包括以下步骤：
    步骤一，将装有硅片的料框放置于所述脱胶插片机的上料位；
    步骤二，利用所述抓取机构抓取并移动装有硅片的所述料框至脱胶机构，以对硅片进行脱胶处理以使硅片与晶托分离；
    步骤三，利用所述抓取机构抓取并移动装有硅片的所述料框至所述插片机构；
    步骤四，利用所述解锁机构解除所述料框对所述硅片的夹持固定；
    步骤五，利用所述插片机构对脱胶后的硅片进行拆分处理。
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