WO2023274078A1 - 均分机构及脱胶装置 - Google Patents

均分机构及脱胶装置 Download PDF

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Publication number
WO2023274078A1
WO2023274078A1 PCT/CN2022/101210 CN2022101210W WO2023274078A1 WO 2023274078 A1 WO2023274078 A1 WO 2023274078A1 CN 2022101210 W CN2022101210 W CN 2022101210W WO 2023274078 A1 WO2023274078 A1 WO 2023274078A1
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WIPO (PCT)
Prior art keywords
degumming
tank
liquid
injection
spray pipe
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PCT/CN2022/101210
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English (en)
French (fr)
Inventor
李宏
张广犬
景健
张江水
王俊
方勇健
黄游
杨涛
刘哲
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杭州中为光电技术有限公司
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Publication of WO2023274078A1 publication Critical patent/WO2023274078A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of silicon wafer manufacturing, in particular to an equalizing mechanism and a degumming device.
  • Photovoltaic and semiconductor silicon wafers are cut by a wire cutting machine from the silicon wafers stuck on the crystal tray.
  • the wire-cut silicon wafers are still glued to the crystal tray, and are transported manually or by AGV to separate degumming
  • the degummed silicon wafers are taken out of the dirty and acidic water by people and put into the clips, and the clips are put into the water tank, and then the water tank is transported by people or AGV to the inserting machine, and the clips are manually taken out and placed. Before inserting into the inserting machine, clean the slices and inserts.
  • the silicon wafers After soaking in water, the silicon wafers will gather into different silicon wafer stacks.
  • the gaps between the silicon wafers inside the silicon wafer stacks are small, and the gaps between different silicon wafer stacks are large, that is, the gaps between individual silicon wafers are not the same , thus affecting the subsequent insertion operation of the silicon wafer.
  • an equalizing mechanism and a degumming device are provided.
  • the present application provides an equalizing mechanism for dispersing silicon chips, and the equalizing mechanism includes a spray pipe and a second liquid pump.
  • the spray pipe is provided with a plurality of spray holes evenly spaced along the length direction, and the spray holes are arranged corresponding to the arrangement direction of the silicon wafers.
  • the second liquid pump is connected to the spray tube through a pipeline, and the second liquid pump can deliver liquid into the spray tube, and make the liquid spray from the spray hole to between adjacent silicon wafers.
  • the distance between adjacent injection holes along the length direction of the injection tube is less than or equal to 10 mm.
  • the injection tube is provided with two rows of injection holes distributed uniformly along the length direction, and the two rows of injection holes are arranged alternately along the length direction of the injection tube. In this way, it is avoided that the distance between adjacent injection holes is too small to affect the structural strength of the injection pipe.
  • the injection hole is a cylindrical hole. In this way, it is beneficial to expand the spraying area of the liquid. Moreover, the processing technology of the cylindrical hole is relatively simple, which is beneficial to reduce the manufacturing cost of the equalizing mechanism and the degumming device.
  • the injection hole is a conical hole, and the end of the conical hole with a smaller diameter faces to the outside of the wall of the injection tube. In this way, the runoff of the liquid remains unchanged, but the diameter of the injection hole becomes smaller, and the injection speed of the liquid when passing through the injection hole becomes faster, which is beneficial to increase the impact force of the liquid when it leaves the injection hole, and accelerate the dispersion speed between the silicon chips.
  • the equalizing mechanism further includes a first rotating assembly and a first support assembly, the equalizing mechanism is installed in the degumming tank of the degumming device through the first supporting assembly, the first rotating assembly connects the first supporting assembly and the injection pipe, And the first rotating assembly can drive the spray pipe to rotate.
  • the first support assembly includes a first rotating seat and a first hinge seat fixed to the degumming tank
  • the first rotating assembly includes a first rotating shaft, a first fixed bracket, a first movable bracket and a first driving cylinder
  • the first driving cylinder includes a first cylinder block and a first piston that are linearly driven
  • the first rotating shaft is rotatably connected to the first rotating seat
  • the first fixed bracket is fixedly connected to the first rotating shaft and the injection pipe, so that the first rotating shaft can Drive the injection pipe to rotate relative to the first rotating seat
  • one end of the first movable bracket is fixedly connected to the first rotating shaft, the other end is hinged to the first piston, and the end of the first cylinder away from the first piston is hinged to the first hinged seat, so that the first
  • the linear driving cooperation between the cylinder body and the first piston is transformed into the axial circular rotation of the first movable support around the first rotating shaft.
  • the present application also provides a degumming device, which includes a degumming tank, a water storage tank and the equalizing mechanism described in any one of the above embodiments.
  • the second liquid pump can deliver the liquid in the water storage tank to the spray pipe.
  • the spray pipe includes a pair of side spray pipes rotatably arranged on opposite sides of the degumming tank.
  • the spray pipe includes a bottom spray pipe disposed at the bottom of the degumming tank.
  • Fig. 1 is a schematic structural view of a degumming device according to one or more embodiments.
  • Fig. 2 is a system structure diagram of a degumming device according to one or more embodiments.
  • Fig. 3 is a partial structural schematic diagram of a degumming device provided with an acid storage tank and a water storage tank according to one or more embodiments.
  • Fig. 4 is a partial structural schematic diagram of a degumming device provided with a degumming tank according to one or more embodiments.
  • FIG. 5 is an enlarged view of A shown in FIG. 4 .
  • Fig. 6 is a schematic structural diagram of an equalizing mechanism according to one or more embodiments.
  • Fig. 7 is a schematic structural diagram of a degumming device according to one or more embodiments.
  • Fig. 8 is a schematic diagram of the structure of a side nozzle according to one or more embodiments.
  • FIG. 9 is an enlarged view of point B shown in FIG. 8 .
  • Fig. 10 is a schematic structural view of a bottom nozzle according to one or more embodiments.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined.
  • a first feature being "on” or “under” a second feature may mean that the first and second features are in direct contact, or that the first and second features are indirect through an intermediary. touch.
  • “above”, “above” and “above” the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • “Below”, “beneath” and “beneath” the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
  • the present application provides a degumming device 400 , which is used for degumming treatment of the silicon wafer 100 .
  • the degumming device 400 includes a degumming tank 1 , an acid storage tank 2 and a water storage tank 3 .
  • the acid storage tank 2 and the water storage tank 3 are all connected to the degumming tank 1 through the pipeline 107, and the water storage tank 3 is used to transport water to the degumming tank 1.
  • the silicon wafer 100 Before degumming, the silicon wafer 100 can be soaked in water, so that it is beneficial to clean the The cutting suspension, silicon powder and water on the surface of the silicon wafer 100 can soften the colloid bonded on the silicon wafer 100 .
  • the acid storage tank 2 is used to transport degumming liquid such as lactic acid into the degumming tank 1 , and the colloid bonded on the silicon wafer 100 will completely dissolve in the lactic acid under the action of the degumming liquid.
  • the pipeline 107 is installed on the degumming tank 1, and the pipeline 107 is used for liquid intake or discharge.
  • the pipeline 107 has at least one discharge pipeline, one liquid inlet pipeline, one liquid level detector and one overflow pipeline.
  • the pipeline 107 between the degumming tank 1 and the acid storage tank 2 is provided with a first control component IV, and the first control component IV can control the connection between the degumming tank 1 and the acid storage tank 2 .
  • the pipeline 107 between the degumming tank 1 and the water storage tank 3 is provided with a second control component V, and the second control component V can control the connection between the degumming tank 1 and the water storage tank 3 .
  • the second control component V controls the opening of the pipeline 107 between the degumming tank 1 and the water storage tank 3 and the first control component IV controls the degumming tank 1 and the acid storage tank
  • the pipeline 107 between 2 is closed, and at this moment, the water storage tank 3 delivers water to the degumming tank 1, and the silicon wafer 100 is soaked in water.
  • the water in the degumming tank 1 is first drained, and then the first control component IV controls the opening of the pipeline 107 between the degumming tank 1 and the acid storage tank 2, Moreover, the second control component V controls the closing of the pipeline 107 between the degumming tank 1 and the water storage tank 3.
  • the acid storage tank 2 transports degumming liquid such as lactic acid to the degumming tank 1, and the silicon wafer 100 is soaked in the degumming liquid for degumming.
  • the immersion time of the silicon wafer 100 in water is 5 minutes
  • the immersion time of the silicon wafer 100 in the degumming solution is 10 minutes.
  • the degumming device 400 provided in the present application only needs one degumming tank 1 to realize the immersion of the silicon wafer 100 in water and degumming solution.
  • the number of degumming tanks 1 provided in the degumming device 400 is greatly reduced, the volume of the degumming device 400 is reduced, and the manufacturing cost of the degumming device 400 is reduced.
  • two or three degumming tanks 1 can also be arranged on the degumming device 400 to realize synchronous degumming of multiple silicon wafers 100 .
  • the degumming tank 1 will be arranged above the acid storage tank 2 and the water storage tank 3, so that the occupied area of the whole degumming device 400 Smaller area and more compact structure.
  • the degumming tank 1, the acid storage tank 2 and the water storage tank 3 may also be arranged on the same plane.
  • the first control component IV includes a first liquid pump 4 capable of delivering the liquid in the acid storage tank 2 to the degumming tank 1 .
  • the first liquid pump 4 can quickly transport the liquid in the acid storage tank 2 to the degumming tank 1 , which improves the degumming efficiency of the degumming device 400 .
  • the second control assembly V includes a second liquid pump 5 capable of delivering the liquid in the water storage tank 3 to the degumming tank 1 .
  • the second liquid pump 5 can quickly transport the liquid in the water storage tank 3 to the degumming tank 1 , which also improves the degumming efficiency of the degumming device 400 .
  • the first control assembly IV in order to prevent the liquid in the degumming tank 1 from flowing back, also includes a first valve, the first valve is used to control the liquid between the degumming tank 1 and the acid storage tank 2
  • the first valve includes one or more of a pneumatic valve R, a manual valve S and an electromagnetic valve (not shown). That is, the pipeline 107 between the degumming tank 1 and the acid storage tank 2 can only be provided with one of the pneumatic valve R, the manual valve S and the electromagnetic valve, or can be a combination of two or more of the above three valves.
  • the above three valves may be set at the same time.
  • the manual valve S adds the operation option of manually controlling the first valve, which is beneficial to realize the artificial control of the on-off of the pipeline 107 between the degumming tank 1 and the acid storage tank 2 in an emergency.
  • the second control assembly V also includes a second valve, the second valve is used to control the on-off of the pipeline 107 between the degumming tank 1 and the water storage tank 3, and the second valve includes a pneumatic valve R, a manual valve S or an electromagnetic valve one or more of. That is, the pipeline 107 between the degumming tank 1 and the water storage tank 3 can only be provided with one of the pneumatic valve R, the manual valve S and the electromagnetic valve, or it can be a combination of two or two of the above three valves, or it can be It is to set the above three valves at the same time.
  • the manual valve S adds the operation option of manually controlling the second valve, which is beneficial to realize the artificial control of the on-off of the pipeline 107 between the degumming tank 1 and the water storage tank 3 in an emergency.
  • a first liquid level gauge 83 is usually set in the degumming tank 1 , and the first liquid level gauge 83 is used to indicate the liquid level in the degumming tank 1 .
  • the first liquid level gauge 83 may be a tuning fork vibration liquid level gauge, a magnetic levitation liquid level gauge, a pressure type liquid level gauge, an ultrasonic liquid level gauge, a sonar wave liquid level gauge or a magnetic flap liquid level gauge.
  • a first overflow port 84 is usually set on the side wall of the degumming tank 1, and the first overflow port 84 can be connected to the outside world through a pipeline. Liquid collection device. Further, in order to facilitate the connection between the first overflow port 84 and the pipeline, a connecting flange is provided at the first overflow port 84 .
  • the degumming device 400 also includes a first temperature controller, a first heater 81 and a first temperature sensor 82 .
  • the U-shaped first heater 81 and the first temperature sensor 82 are respectively electrically connected to the first temperature controller, and the first heater 81 and the first temperature sensor 82 are arranged in the degumming tank 1 .
  • the temperature of the liquid in the degumming tank 1 detected by the first temperature sensor 82 is sent back to the first temperature controller in real time, and then the first temperature controller can control the first heater according to the temperature data measured by the first temperature sensor 82 81 start and stop.
  • the first temperature controller controls the first heater 81 to heat the liquid in the degumming tank 1 until the temperature of the liquid in the degumming tank 1 reaches a predetermined temperature.
  • a second liquid level gauge 93 is usually provided in the acid storage tank 2, and the second liquid level gauge 93 is used to indicate the acid storage tank 2 The liquid level of the inner liquid.
  • the second liquid level gauge 93 may be a tuning fork vibration liquid level gauge, a magnetic levitation liquid level gauge, a pressure type liquid level gauge, an ultrasonic liquid level gauge, a sonar wave liquid level gauge or a magnetic flap liquid level gauge.
  • a second overflow port 94 is usually set on the side wall of the acid storage tank 2, and the second overflow port 94 can be connected to External liquid collection device. Further, in order to facilitate the connection between the second overflow port 94 and the pipeline, a connecting flange is provided at the second overflow port 94 .
  • the acid storage device also includes a second temperature controller, a second heater 91 and a second temperature sensor 92 .
  • the second heater 91 and the second temperature sensor 92 are respectively electrically connected to the second temperature controller, and the second heater 91 and the second temperature sensor 92 are arranged in the acid storage tank 2 .
  • the second temperature sensor 92 transmits the detected temperature of the liquid in the acid storage tank 2 back to the second temperature controller in real time, and then the second temperature controller can control the second heating according to the temperature data measured by the second temperature sensor 92.
  • the start and stop of device 91 When the temperature of the liquid in the acid storage tank 2 is low, the second temperature controller controls the second heater 91 to heat the liquid in the acid storage tank 2 until the temperature of the liquid in the acid storage tank 2 reaches a predetermined temperature.
  • a third liquid level gauge 103 is usually provided in the water storage tank 3, and the third liquid level gauge 103 is used to indicate that the liquid in the water storage tank 3 the liquid level.
  • the third liquid level gauge 103 may be a tuning fork vibration liquid level gauge, a magnetic levitation liquid level gauge, a pressure type liquid level gauge, an ultrasonic liquid level gauge, a sonar wave liquid level gauge or a magnetic flap liquid level gauge.
  • a third overflow port 104 is usually provided on the side wall of the water storage tank 3, and the third overflow port 104 can be connected to the outside world through a pipeline. Liquid collection device. Further, in order to facilitate the connection between the third overflow port 104 and the pipeline, a connecting flange is provided at the third overflow port 104 .
  • the water storage device also includes a third temperature controller, a third heater 101 and a third temperature sensor 102 .
  • the third heater 101 and the third temperature sensor 102 are respectively electrically connected to the third temperature controller, and the third heater 101 and the third temperature sensor 102 are arranged in the water storage tank 3 .
  • the third temperature sensor 102 transmits the detected temperature of the liquid in the water storage tank 3 back to the third temperature controller in real time, and then the third temperature controller can control the third heater according to the temperature data measured by the third temperature sensor 102 101 start and stop.
  • the third temperature controller controls the third heater 101 to heat the liquid in the water storage tank 3 until the temperature of the liquid in the water storage tank 3 reaches a predetermined temperature.
  • the degumming tank 1 is usually provided with an opening.
  • the device 400 is provided with a movable cover 105 at the opening of the degumming tank 1 , and the movable cover 105 can be movably covered on the opening of the degumming tank 1 .
  • the movable cover 105 in this embodiment is in the mode of two doors facing each other, that is, the movable cover 105 is symmetrically arranged at the opening of the degumming tank 1 in a left-right mirror-like manner.
  • the movable cover 105 is also connected with an opening and closing cylinder 106 , and the automatic opening and closing of the movable cover 105 is realized by driving the opening and closing cylinder 106 .
  • the degumming device 400 is further provided with an equalizing mechanism 300 , and the equalizing mechanism 300 includes a spray pipe 61 and a second liquid pump 5 .
  • the injection pipe 61 is provided with a plurality of injection holes 613 uniformly spaced along the length direction.
  • the second liquid pump 5 is connected to the spray pipe 61 through the pipe 107 , and the second liquid pump 5 can deliver the liquid into the spray pipe 61 and spray the liquid from the spray hole 613 toward the space between adjacent silicon wafers 100 . When the liquid is sprayed from the injection hole 613, it has a certain impact force.
  • the silicon wafers 100 that were originally tightly bonded together will be scattered, that is, The silicon wafer 100 can be blown away with a small water flow.
  • the injection holes 613 are evenly distributed on the injection pipe 61, therefore, the gaps between different silicon wafers 100 are impacted by the liquid in the same way, and at this time, the new gaps formed between different silicon wafers 100 are also the same, that is, , the silicon wafer 100 is evenly dispersed under the impact of the liquid.
  • the larger the number of samples the higher the prediction accuracy.
  • the number of silicon wafers 100 bonded on each crystal support 200 is more than 100 pieces. Therefore, when the number of silicon wafers 100 is large enough, the silicon wafers 100 can be evenly dispersed by blowing water on the silicon wafers 100 .
  • the spray pipe 61 is arranged in the degumming tank 1, and the second liquid pump 5 connects the water storage tank 3 and the spray pipe 61 through a pipeline 107.
  • the liquid is sent to the spray pipe 61.
  • the injection pipe 61 can also directly draw water from the degumming tank 1 through the second liquid pump 5 , so as to realize the water circulation inside the degumming tank 1 .
  • the injection pipe 61 includes a pair of side nozzles 611 that are rotatably arranged on opposite sides of the degumming tank 1, and a bottom nozzle 612 that is arranged at the bottom of the degumming tank 1.
  • the equalizing mechanism 300 also includes a first rotating assembly 62 and a first supporting assembly 63, the equalizing mechanism 300 is installed in the degumming tank 1 of the degumming device 400 through the first supporting assembly 63 , the first rotating assembly 62 connects the first supporting assembly 63 and the spraying pipe 61 , and the first rotating assembly 62 can drive the spraying pipe 61 to rotate.
  • the first support assembly 63 includes a first rotating seat 631 and a first hinge seat 632 fixed to the degumming tank 1, and the first rotating assembly 62 includes a first rotating shaft 621, a first fixing
  • the bracket 622 , the first movable bracket 623 and the first driving cylinder 624 , the first driving cylinder 624 includes a first cylinder body 624 a and a first piston 624 b that are matched by linear driving.
  • the first rotating shaft 621 is rotatably connected to the first rotating seat 631, the first fixing bracket 622 is U-shaped, and one end of the first fixing bracket 622 is fixedly connected to the first rotating shaft 621 and the other end is fixedly connected to the side nozzle 611, so that The first rotating shaft 621 can drive the side nozzle 611 to rotate relative to the first rotating seat 631 .
  • One end of the first movable bracket 623 is fixedly connected to the first rotating shaft 621, the other end is hinged to the first piston 624b, and the end of the first cylinder 624a away from the first piston 624b is hinged to the first hinge seat 632, so that the first cylinder
  • the linear driving cooperation of the first piston 624a and the first piston 624b is transformed into the circumferential rotation of the first movable bracket 623 around the axial direction of the first rotating shaft 621 .
  • the above-mentioned structure is a crank-and-rod mechanism in essence, but it is different from the traditional crank-and-rod mechanism.
  • the first cylinder 624a and the first piston 624b of the first driving cylinder 624 also serve as links between the connecting rods.
  • One is to swing synchronously with the first movable bracket 623 , and the first driving cylinder 624 can realize the swing because the end of the first cylinder body 624 a away from the first piston 624 b is hinged to the first hinge seat 632 .
  • Such an arrangement greatly simplifies the required structural parts of the crank linkage mechanism, and reduces the manufacturing difficulty of the equalizing mechanism 300 .
  • the degumming device 400 is also provided with a spray mechanism.
  • the spray mechanism includes a spray pipe 71 and a second driving cylinder 72 .
  • the spray pipe 71 is used for spraying liquid, and the spray pipe 71 is connected to the water storage tank 3 through the second liquid pump 5 .
  • the second driving cylinder 72 can drive the spray pipe 71 to rotate.
  • the principle that the second driving cylinder 72 drives the spray pipe 71 to rotate is the same as the principle that the first driving cylinder 624 drives the spray pipe 61 to rotate.
  • the injection pipe 61 is provided with two rows of injection holes 613 that are evenly spaced along the length direction, and the two rows of injection holes 613 are arranged staggered along the length direction of the injection pipe 61 . In this way, it is avoided that the distance between adjacent spray holes 613 is too small to affect the structural strength of the spray pipe 61 .
  • the spray pipe 61 may be provided with three rows of spray holes 613 uniformly spaced along the length direction, and the three rows of spray holes 613 are arranged alternately along the length direction of the spray pipe 61 .
  • the injection pipe 61 can also be provided with four or five rows of injection holes 613 evenly spaced along the length direction, and the four or five rows of injection holes 613 are arranged staggered along the length direction of the injection pipe 61 .
  • the distance between adjacent injection holes 613 along the length direction of the injection pipe 61 is less than or equal to 10mm.
  • the photovoltaic silicon wafer 100 has a thickness between 0.13 mm and 0.18 mm, while the semiconductor silicon wafer 100 has a thickness of 0.7 mm. Therefore, the distance between the injection holes 613 of the equalizing mechanism 300 is usually less than 10 mm.
  • the pitch of the injection holes 613 may be 10mm, 9mm, 8mm, 7mm, 6mm, 5mm, 4mm, 3mm, 2mm, 1mm or 0.5mm, but not limited thereto.
  • the injection hole 613 is a cylindrical hole.
  • the machining process of the cylindrical hole is relatively simple, which is beneficial to reduce the manufacturing cost of the equalizing mechanism 300 and the degumming device 400 .
  • the injection hole 613 is a conical hole, and the end of the conical hole with a smaller diameter faces to the outside of the wall of the injection pipe 61 .
  • the flow rate of the liquid injected in the radial direction remains unchanged, but the diameter of the injection hole 613 becomes smaller, and the injection speed of the liquid when passing through the injection hole 613 becomes faster, which is beneficial to improving the impact force of the liquid when it leaves the injection hole 613, and accelerates the silicon wafer. Scatter speed between 100.
  • the degumming device 400 provided in this application has the following two degumming methods.
  • Method 1 the silicon wafer 100 is placed in the degumming tank 1 first, and then the spray mechanism is started, and the impurities on the surface of the silicon wafer 100 are washed away by the water sprayed from the spray pipe 71 . Then discharge the water mixed with impurities in the degumming tank 1, and then transport the clean water in the water storage tank 3 to the degumming tank 1 by the second liquid pump 5, so that the silicon wafer 100 is soaked in the degumming tank 1, and the soaking time is controlled at 5 minutes - 10 minutes.
  • the equalizing mechanism 300 is activated, and the spray pipe 61 sprays water toward the silicon wafer 100, so that the silicon wafer 100 is uniformly dispersed.
  • Mode 1 can realize the entire degumming step by using a single degumming tank 1 , and two degumming tanks 1 can degumming two groups of silicon wafers 100 at the same time.
  • the silicon wafer 100 is placed in one of the degumming tanks 1 first, and then the spray mechanism is activated, and the impurities on the surface of the silicon wafer 100 are washed away by the water sprayed from the spray pipe 71 . Then discharge the water mixed with impurities in the degumming tank 1, and then transport the clean water in the water storage tank 3 to the above-mentioned degumming tank 1 by the second liquid pump 5, so that the silicon wafer 100 is soaked in the degumming tank 1, and the soaking time is controlled at 5 minutes - 10 minutes.
  • the equalizing mechanism 300 is activated, and the spray pipe 61 sprays water toward the silicon wafer 100, so that the silicon wafer 100 is uniformly dispersed.
  • the degumming solution in the acid storage tank 2 is delivered to another degumming tank 1 by the first liquid pump 4, and then the silicon wafer 100 is taken out from one of the degumming tanks 1 and put into the degumming tank 1, so that the silicon wafer 100 is soaked in In the degumming tank 1, the soaking time is controlled at 10 minutes-15 minutes. Finally, the degumming solution in the degumming tank 1 is discharged, water is passed into the degumming tank 1 again, and the silicon wafer 100 with the remaining degumming solution is cleaned again. In the second manner, the two degumming tanks 1 can be used step by step to complete the degumming process of the silicon wafer 100 together.

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Abstract

一种均分机构(300)及脱胶装置(400)。该均分机构(300)及脱胶装置(400)用于分散硅片(100)，该均分机构(300)包括喷射管(61)和第二液泵(5)。喷射管(61)沿着长度方向设有均匀间隔分布的多个喷射孔(613)。第二液泵(5)通过管道(107)连接喷射管(61)，第二液泵(5)能够朝喷射管(61)内输送液体，并使液体从喷射孔(613)朝向相邻的硅片(100)之间喷射。

Description

均分机构及脱胶装置
相关申请
本申请要求2021年7月1日申请的，申请号为202110746252.9，发明名称为“脱胶插片机”以及2021年8月2日申请的，申请号为202110883136.1，发明名称为“均分机构及脱胶装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及硅片制造技术领域，特别是涉及一种均分机构及脱胶装置。
背景技术
光伏、半导体硅片是由线切机将粘在晶托上的硅片切割而成，在现有工艺中，线切后的硅片仍然粘在晶托上，由人工或者AGV运输到单独脱胶机进行脱胶，脱胶后的硅片由人从脏并含有酸的水中捞出放入弹夹，弹夹放入水箱，再由人或AGV运输水箱到插片机，人工将弹夹拿出放入插片机前进行分片插片清洗。
硅片泡入水中后会聚成不同的硅片堆，硅片堆内部的硅片之间间隙较小，不同硅片堆之间的间隙较大，也即，单个硅片之间的间隙不相同，从而影响硅片后续的插片操作。
发明内容
根据本申请的各种实施例，提供一种均分机构及脱胶装置。
本申请提供一种均分机构，用于分散硅片，该均分机构包括喷射管和第二液泵。喷射管沿着长度方向设有均匀间隔分布的多个喷射孔，且喷射孔对应硅片的排列方向设置。第二液泵通过管道连接喷射管，第二液泵能够朝喷射管内输送液体，并使液体从喷射孔向相邻的硅片之间喷射。
在一实施例中，相邻喷射孔沿着喷射管长度方向的间距小于或等于10mm。喷射孔的间距越小，不同硅片之间的间隙受到的冲击力越均匀。
在一实施例中，喷射管设有两列沿着长度方向均匀间隔分布的喷射孔，且两列喷射孔沿着喷射管的长度方向交错布置。如此，避免相邻喷射孔的间距太小而影响喷射管的结构强度。
在一实施例中，喷射孔为圆柱形孔。如此，有利于扩大液体的喷射面积。并且，圆柱形孔加工工艺比较简单，有利于降低均分机构以及脱胶装置的制造成本。
在一实施例中，喷射孔为圆锥形孔，圆锥形孔孔径较小的一端朝向喷射管管壁的外侧。 如此，液体的径流量不变，而喷射孔的孔径变小，液体通过喷射孔时的喷射速度变快，有利于提高液体离开喷射孔时的冲击力，加快硅片之间的分散速度。
在一实施例中，均分机构还包括第一转动组件和第一支撑组件，均分机构通过第一支撑组件安装于脱胶装置的脱胶槽，第一转动组件连接第一支撑组件和喷射管，且第一转动组件能够驱动喷射管转动。
在一实施例中，第一支撑组件包括固定于脱胶槽的第一转动座和第一铰接座，第一转动组件包括第一转轴、第一固定支架、第一活动支架和第一驱动气缸，第一驱动气缸包括直线驱动配合的第一缸体和第一活塞；第一转轴可转动地连接于第一转动座，第一固定支架固定连接第一转轴和喷射管，以使第一转轴能够带动喷射管相对第一转动座转动；第一活动支架一端固定连接第一转轴，另一端铰接于第一活塞，第一缸体背离第一活塞的一端铰接于第一铰接座，以使第一缸体与第一活塞的直线驱动配合转化为第一活动支架围绕第一转轴轴向的圆周转动。如此设置，极大地简化了曲柄连杆机构所需的结构件，降低了均分机构的制造难度。
本申请还提供一种脱胶装置，该脱胶装置包括脱胶槽、储水槽和以上任意一个实施例所述的均分机构，喷射管设于脱胶槽内，第二液泵通过管道连接储水槽和喷射管，第二液泵能够将储水槽内的液体输送到喷射管。
在一实施例中，喷射管包括可转动地设置于脱胶槽的相对的两侧的一对侧喷管。
在一实施例中，喷射管包括设置于脱胶槽底部的底喷管。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更好地描述和说明这里公开的那些申请的实施例和/或示例，可以参考一幅或多幅附图。用于描述附图的附加细节或示例不应当被认为是对所公开的申请、目前描述的实施例和/或示例以及目前理解的这些申请的最佳模式中的任何一者的范围的限制。
图1为根据一个或多个实施例的脱胶装置的结构示意图。
图2为根据一个或多个实施例的脱胶装置的系统结构图。
图3为根据一个或多个实施例的设有储酸槽和储水槽的脱胶装置的局部结构示意图。
图4为根据一个或多个实施例的设有脱胶槽的脱胶装置的局部结构示意图。
图5为图4所示A处的放大图。
图6为根据一个或多个实施例的均分机构的结构示意图。
图7为根据一个或多个实施例的脱胶装置的结构示意图。
图8为根据一个或多个实施例的侧喷管的结构示意图。
图9为图8所示B处的放大图。
图10为根据一个或多个实施例的底喷管的结构示意图。
附图标记：100、硅片；200、晶托；300、均分机构；400、脱胶装置；1、脱胶槽；2、储酸槽；3、储水槽；Ⅳ、第一控制组件；4、第一液泵；Ⅴ、第二控制组件；5、第二液泵；61、喷射管；611、侧喷管；612、底喷管；613、喷射孔；62、第一转动组件；621、第一转轴；622、第一固定支架；623、第一活动支架；624、第一驱动气缸；624a、第一缸体；624b、第一活塞；63、第一支撑组件；631、第一转动座；632、第一铰接座；71、喷淋管；72、第二驱动气缸；81、第一加热器；82、第一温度传感器；83、第一液位计；84、第一溢流口；91、第二加热器；92、第二温度传感器；93、第二液位计；94、第二溢流口；101、第三加热器；102、第三温度传感器；103、第三液位计；104、第三溢流口；105、活动盖板；106、开闭气缸；107、管道。
具体实施方式
下面将结合本申请实施方式中的附图，对本申请实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可 以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本申请所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
除非另有定义，本申请所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参阅图1-图7，在加工硅片100时，通常将硅条粘接在晶托200上，然后对硅条进行切割加工从而形成硅片100，加工后的硅片100仍然粘接在晶托200上，为了将硅片100从晶托200上分离，本申请提供一种脱胶装置400，该脱胶装置400用于硅片100的脱胶处理。脱胶装置400包括脱胶槽1、储酸槽2和储水槽3。储酸槽2和储水槽3均通过管道107连通脱胶槽1，储水槽3用于向脱胶槽1内输送水，在脱胶之前，可先将硅片100浸泡在水中，如此，有利于清洗掉硅片100表面的切割悬浮液和硅粉，并且水能够软化硅片100上粘接的胶体。储酸槽2用于向脱胶槽1内输送乳酸等脱胶液，粘接在硅片100上的胶体在脱胶液的作用下，会完全溶解于乳酸。
管道107安装于脱胶槽1上,管道107用于进液或排液，管道107至少有一个排液管路，一个进液管路，一个液位检测器，一个溢流管路。
脱胶槽1和储酸槽2之间的管道107上设有第一控制组件Ⅳ，第一控制组件Ⅳ能够控制脱胶槽1与储酸槽2之间的通断。脱胶槽1和储水槽3之间的管道107上设有第二控制组件Ⅴ，第二控制组件Ⅴ能够控制脱胶槽1与储水槽3之间的通断。当需要对硅片100上 粘接的胶体进行软化时，第二控制组件Ⅴ控制脱胶槽1与储水槽3之间的管道107打开，并且，第一控制组件Ⅳ控制脱胶槽1与储酸槽2之间的管道107关闭，此时，储水槽3向脱胶槽1输送水，硅片100浸泡在水中。之后，当需要对硅片100上粘接的胶体进行溶解时，先排掉脱胶槽1内的水，然后，第一控制组件Ⅳ控制脱胶槽1与储酸槽2之间的管道107打开，并且，第二控制组件Ⅴ控制脱胶槽1与储水槽3之间的管道107关闭，此时，储酸槽2向脱胶槽1输送乳酸等脱胶液，硅片100浸泡在脱胶液中进行脱胶。通常，硅片100在水中的浸泡时间是5分钟，硅片100在脱胶液中的浸泡时间是10分钟。由以上可知，本申请提供的脱胶装置400，只需一个脱胶槽1，便可实现硅片100的浸泡水和浸泡脱胶液。大大减少了脱胶装置400所设的脱胶槽1的数量，减小了脱胶装置400的体积，并减小了脱胶装置400的制造成本。当然，为了加快脱胶装置400脱胶的速率，还可以在脱胶装置400上设置两个或者三个脱胶槽1，实现多个硅片100的同步脱胶。
如图1所示，通常，为了便于硅片100在脱胶槽1内的取放，会将脱胶槽1设置在储酸槽2和储水槽3的上方，如此设置，整个脱胶装置400的占地面积更小且结构更加紧凑。当然，也不限于此，也可将脱胶槽1、储酸槽2和储水槽3设置在同一平面上。
当脱胶槽1设置在储酸槽2和储水槽3的上方时，则需要在脱胶槽1与储酸槽2之间以及脱胶槽1与储水槽3之间设置液泵。具体地，第一控制组件Ⅳ包括第一液泵4，第一液泵4能够将储酸槽2内的液体输送到脱胶槽1。第一液泵4能够将储酸槽2内的液体快速输送至脱胶槽1内，提高了脱胶装置400的脱胶效率。第二控制组件Ⅴ包括第二液泵5，第二液泵5能够将储水槽3内的液体输送到脱胶槽1。第二液泵5能够将储水槽3内的液体快速输送至脱胶槽1内，也提高了脱胶装置400的脱胶效率。
在一实施例中，如图2所示，为了防止脱胶槽1内的液体回流，第一控制组件Ⅳ还包括第一阀，第一阀用于控制脱胶槽1和储酸槽2之间的管道107的通断，第一阀包括气动阀R、手动阀S和电磁阀(图未示)中的一种或多种。也即，脱胶槽1和储酸槽2之间的管道107可以只设置气动阀R、手动阀S和电磁阀中的一种阀，也可以是上述三种阀之间的两两组合，还可以是同时设置上述三种阀。其中，手动阀S增加了人工控制第一阀的操作选项，有利于在紧急情况下实现对脱胶槽1和储酸槽2之间的管道107通断的人为控制。
同样地，第二控制组件Ⅴ还包括第二阀，第二阀用于控制脱胶槽1和储水槽3之间的管道107的通断，第二阀包括气动阀R、手动阀S或电磁阀中的一种或多种。也即，脱胶槽1和储水槽3之间的管道107可以只设置气动阀R、手动阀S和电磁阀中的一种阀，也可以是上述三种阀之间的两两组合，还可以是同时设置上述三种阀。其中，手动阀S增加了人工控制第二阀的操作选项，有利于在紧急情况下实现对脱胶槽1和储水槽3之间的管 道107通断的人为控制。
为了实时监控脱胶槽1内的液位，如图4所示，通常会在脱胶槽1内设置第一液位计83，第一液位计83用于指示脱胶槽1内液体的液位。第一液位计83可以是音叉振动式液位计、磁浮式液位计、压力式液位计、超声波液位计、声呐波液位计或者磁翻板液位计。并且，为了控制脱胶槽1内液体的液位，防止液体太满而发生溢出，通常会在脱胶槽1的侧壁设置第一溢流口84，第一溢流口84可通过管道连接外界的液体收集装置。进一步地，为了便于第一溢流口84与管道的连接，会在第一溢流口84处设置连接法兰。
在一实施例中，如图4所示，为了实时控制脱胶槽1内液体的温度。脱胶装置400还包括第一温度控制器、第一加热器81和第一温度传感器82。其中，呈U型的第一加热器81和第一温度传感器82分别电连接第一温度控制器，并且，第一加热器81和第一温度传感器82设于脱胶槽1内。第一温度传感器82将检测的脱胶槽1内的液体的温度实时传回至第一温度控制器，然后，第一温度控制器能够根据第一温度传感器82测得的温度数据控制第一加热器81的启停。当脱胶槽1内的液体温度偏低时，第一温度控制器控制第一加热器81对脱胶槽1内的液体进行加热，直至脱胶槽1内的液体温度达到预定温度。
同样地，如图3所示，为了实时监控储酸槽2内的液位，通常会在储酸槽2内设有第二液位计93，第二液位计93用于指示储酸槽2内液体的液位。第二液位计93可以是音叉振动式液位计、磁浮式液位计、压力式液位计、超声波液位计、声呐波液位计或者磁翻板液位计。并且，为了控制储酸槽2内液体的液位，防止液体太满而发生溢出，通常会在储酸槽2的侧壁设置第二溢流口94，第二溢流口94可通过管道连接外界的液体收集装置。进一步地，为了便于第二溢流口94与管道的连接，会在第二溢流口94处设置连接法兰。
在一实施例中，如图3所示，为了实时控制储酸槽2内液体的温度。储酸装置还包括第二温度控制器、第二加热器91和第二温度传感器92。其中，第二加热器91和第二温度传感器92分别电连接第二温度控制器，并且，第二加热器91和第二温度传感器92设于储酸槽2内。第二温度传感器92将检测的储酸槽2内的液体的温度实时传回至第二温度控制器，然后，第二温度控制器能够根据第二温度传感器92测得的温度数据控制第二加热器91的启停。当储酸槽2内的液体温度偏低时，第二温度控制器控制第二加热器91对储酸槽2内的液体进行加热，直至储酸槽2内的液体温度达到预定温度。
同样地，如图3所示，为了实时监控储水槽3内的液位，通常会在储水槽3内设有第三液位计103，第三液位计103用于指示储水槽3内液体的液位。第三液位计103可以是音叉振动式液位计、磁浮式液位计、压力式液位计、超声波液位计、声呐波液位计或者磁翻板液位计。并且，为了控制储水槽3内液体的液位，防止液体太满而发生溢出，通常会 在储水槽3的侧壁设置第三溢流口104，第三溢流口104可通过管道连接外界的液体收集装置。进一步地，为了便于第三溢流口104与管道的连接，会在第三溢流口104处设置连接法兰。
在一实施例中，如图3所示，为了实时控制储水槽3内液体的温度。储水装置还包括第三温度控制器、第三加热器101和第三温度传感器102。其中，第三加热器101和第三温度传感器102分别电连接第三温度控制器，并且，第三加热器101和第三温度传感器102设于储水槽3内。第三温度传感器102将检测的储水槽3内的液体的温度实时传回至第三温度控制器，然后，第三温度控制器能够根据第三温度传感器102测得的温度数据控制第三加热器101的启停。当储水槽3内的液体温度偏低时，第三温度控制器控制第三加热器101对储水槽3内的液体进行加热，直至储水槽3内的液体温度达到预定温度。
如图4所示，由于脱胶槽1内需要放置或者取出硅片100，脱胶槽1通常会设置一个开口，但是，为了防止杂物从开口处掉落至脱胶槽1内，本申请提供的脱胶装置400在脱胶槽1的开口处设置了活动盖板105，活动盖板105可活动地盖设于脱胶槽1的开口处。具体地，本实施例中的活动盖板105呈双门对开的模式，也即，活动盖板105呈左右镜面对称设置于脱胶槽1的开口处。进一步地，为了方便活动盖板105的快速开闭，活动盖板105还会连接有开闭气缸106，通过开闭气缸106的驱动实现活动盖板105的自动开闭。
为了均匀分散硅片100，在一实施例中，如图3-图8所示，脱胶装置400还设有均分机构300，该均分机构300包括喷射管61和第二液泵5。喷射管61沿着长度方向设有均匀间隔分布的多个喷射孔613。第二液泵5通过管道107连接喷射管61，第二液泵5能够朝喷射管61内输送液体，并使液体从喷射孔613朝向相邻的硅片100之间喷射。液体从喷射孔613喷出时具有一定的冲击力，当液体喷射入相邻的硅片100之间的间隙时，原本紧紧贴合在一起的硅片100会被冲散开，也即，可以用较小水流将硅片100吹散。而喷射孔613均匀分布于喷射管61上，因此，不同硅片100之间的间隙受到液体的冲击是相同的，此时，不同硅片100之间形成的新的间隙也是相同的，也即，硅片100在液体的冲击下被均匀分散开。根据蒙特卡罗法原理，样本数量越多，预测精度越高。而每个晶托200上粘接的硅片100的数量超过100片，因此，在硅片100数量足够多的情况下，对硅片100吹水，是可以将硅片100分散均匀的。
具体地，如图4-图6所示，喷射管61设于脱胶槽1内，第二液泵5通过管道107连接储水槽3和喷射管61，第二液泵5能够将储水槽3内的液体输送到喷射管61。但不限于此，喷射管61还可以通过第二液泵5直接从脱胶槽1内抽取水，从而实现脱胶槽1内部的水循环。进一步地，喷射管61包括可转动地设置于脱胶槽1的相对的两侧的一对侧 喷管611，以及设置于脱胶槽1底部的底喷管612。
为了实现侧喷管611相对脱胶槽1的转动设置，在一实施例中，如图4-图6所示，均分机构300还包括第一转动组件62和第一支撑组件63，均分机构300通过第一支撑组件63安装于脱胶装置400的脱胶槽1，第一转动组件62连接第一支撑组件63和喷射管61，且第一转动组件62能够驱动喷射管61转动。
具体地，如图4-图6所示，第一支撑组件63包括固定于脱胶槽1的第一转动座631和第一铰接座632，第一转动组件62包括第一转轴621、第一固定支架622、第一活动支架623和第一驱动气缸624，第一驱动气缸624包括直线驱动配合的第一缸体624a和第一活塞624b。第一转轴621可转动地连接于第一转动座631，第一固定支架622呈U型，且第一固定支架622的一端固定连接第一转轴621而另一端固定连接侧喷管611，以使第一转轴621能够带动侧喷管611相对第一转动座631转动。第一活动支架623一端固定连接第一转轴621，另一端铰接于第一活塞624b，并且，第一缸体624a背离第一活塞624b的一端铰接于第一铰接座632，以使第一缸体624a与第一活塞624b的直线驱动配合转化为第一活动支架623围绕第一转轴621轴向的圆周转动。上述结构本质是曲柄连杆机构，但是不同于传统的的曲柄连杆机构，本申请的曲柄连杆机构中，第一驱动气缸624的第一缸体624a和第一活塞624b也作为连杆之一与第一活动支架623同步摆动，而第一驱动气缸624能够实现摆动在于第一缸体624a背离第一活塞624b的一端铰接于第一铰接座632。如此设置，极大地简化了曲柄连杆机构所需的结构件，降低了均分机构300的制造难度。
为了对硅片100表面进行初步清洗，在一实施例中，如图4-图6所示，脱胶装置400还设有喷淋机构。喷淋机构包括喷淋管71和第二驱动气缸72。喷淋管71用于喷淋液体，且喷淋管71通过第二液泵5连接储水槽3。第二驱动气缸72能够驱动喷淋管71转动。第二驱动气缸72驱动喷淋管71转动的原理与第一驱动气缸624驱动喷射管61转动的原理相同。
在一实施例中，如图8-图10所示，喷射管61设有两列沿着长度方向均匀间隔分布的喷射孔613，且两列喷射孔613沿着喷射管61的长度方向交错布置。如此，避免相邻喷射孔613的间距太小而影响喷射管61的结构强度。但不限于此，喷射管61可以设置三列沿着长度方向均匀间隔分布的喷射孔613，且三列喷射孔613沿着喷射管61的长度方向交错布置。甚至于，喷射管61还可设置四列或者五列沿着长度方向均匀间隔分布的喷射孔613，且四列或者五列喷射孔613沿着喷射管61的长度方向交错布置。
进一步地，相邻喷射孔613沿着喷射管61长度方向的间距小于或等于10mm。具体地，光伏硅片100的厚度在0.13mm到0.18mm之间，而半导体硅片100的厚度为0.7mm，因此， 用于均分机构300的喷射孔613的间距通常小于10mm。喷射孔613的间距越小，不同硅片100之间的间隙受到的冲击力越均匀。具体地，喷射孔613的间距可以是10mm、9mm、8mm、7mm、6mm、5mm、4mm、3mm、2mm、1mm或0.5mm，但不限于此。
在本实施例中，喷射孔613为圆柱形孔。液体离开圆柱形孔的一瞬间会向外发散形成一锥形的喷射结构，如此，有利于扩大液体的喷射面积。并且，圆柱形孔加工工艺比较简单，有利于降低均分机构300以及脱胶装置400的制造成本。
在另一实施例中，喷射孔613为圆锥形孔，圆锥形孔孔径较小的一端朝向喷射管61管壁的外侧。如此，液体的沿径向喷射的流量不变，而喷射孔613的孔径变小，液体通过喷射孔613时的喷射速度变快，有利于提高液体离开喷射孔613时的冲击力，加快硅片100之间的分散速度。
本申请提供的脱胶装置400，有以下两种脱胶方式。
方式一，先将硅片100放置于脱胶槽1内，再启动喷淋机构，通过喷淋管71喷出的水洗去硅片100表面的杂质。然后排出脱胶槽1内混有杂质的水，再将储水槽3内干净的水通过第二液泵5输送至脱胶槽1内，使硅片100浸泡在脱胶槽1内，浸泡时间控制在5分钟-10分钟。在浸泡的过程中，启动均分机构300，喷射管61朝向硅片100喷射水，使得硅片100均匀分散。再之后，排出脱胶槽1内的水，将储酸槽2内的脱胶液通过第一液泵4输送至脱胶槽1内，使硅片100浸泡在脱胶槽1内，浸泡时间控制在10分钟-15分钟。最后，排出脱胶槽1内的脱胶液，在脱胶槽1内再次通入水，对残留有脱胶液的硅片100进行再次清洗。方式一的可以实现利用单个脱胶槽1实现整个脱胶步骤，两个脱胶槽1可以同时对两组硅片100进行脱胶。
方式二，先将硅片100放置于其中一个脱胶槽1内，再启动喷淋机构，通过喷淋管71喷出的水洗去硅片100表面的杂质。然后排出脱胶槽1内混有杂质的水，再将储水槽3内干净的水通过第二液泵5输送至上述脱胶槽1内，使硅片100浸泡在脱胶槽1内，浸泡时间控制在5分钟-10分钟。在浸泡的过程中，启动均分机构300，喷射管61朝向硅片100喷射水，使得硅片100均匀分散。将储酸槽2内的脱胶液通过第一液泵4输送至另一个脱胶槽1内，再将硅片100从其中一个脱胶槽1取出放入该脱胶槽1内，使硅片100浸泡在该脱胶槽1内，浸泡时间控制在10分钟-15分钟。最后，排出脱胶槽1内的脱胶液，在脱胶槽1内再次通入水，对残留有脱胶液的硅片100进行再次清洗。方式二可以实现两个脱胶槽1分步使用，共同完成硅片100的脱胶过程。
以上所述实施方式的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施方式中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存 在矛盾，都应当认为是本说明书记载的范围。
本技术领域的普通技术人员应当认识到，以上的实施方式仅是用来说明本申请，而并非用作为对本申请的限定，只要在本申请的实质精神范围内，对以上实施方式所作的适当改变和变化都落在本申请要求保护的范围内。

Claims (10)

  1. 一种均分机构，用于分散硅片，其特征在于，包括
    喷射管，沿着长度方向设有均匀间隔分布的多个喷射孔，且所述喷射孔对应硅片的排列方向设置；
    第二液泵，通过管道连接所述喷射管，所述第二液泵能够朝所述喷射管内输送液体，并使所述液体从所述喷射孔向相邻的硅片之间喷射。
  2. 根据权利要求1所述的均分机构，其中，相邻所述喷射孔沿着所述喷射管长度方向的间距小于或等于10mm。
  3. 根据权利要求1所述的均分机构，其中，所述喷射管设有两列沿着长度方向均匀间隔分布的喷射孔，且两列所述喷射孔沿着所述喷射管的长度方向交错布置。
  4. 根据权利要求1所述的均分机构，其中，所述喷射孔为圆柱形孔。
  5. 根据权利要求1所述的均分机构，其中，所述喷射孔为圆锥形孔，所述圆锥形孔孔径较小的一端朝向所述喷射管管壁的外侧。
  6. 根据权利要求5所述的均分机构，其中，还包括第一转动组件和第一支撑组件，所述均分机构通过所述第一支撑组件安装于脱胶装置的脱胶槽，所述第一转动组件连接所述第一支撑组件和所述喷射管，且所述第一转动组件能够驱动所述喷射管转动。
  7. 根据权利要求6所述的均分机构，其中，所述第一支撑组件包括固定于脱胶槽的第一转动座和第一铰接座，所述第一转动组件包括第一转轴、第一固定支架、第一活动支架和第一驱动气缸，所述第一驱动气缸包括直线驱动配合的第一缸体和第一活塞；所述第一转轴可转动地连接于所述第一转动座，所述第一固定支架固定连接所述第一转轴和所述喷射管，以使所述第一转轴能够带动所述喷射管相对所述第一转动座转动；所述第一活动支架一端固定连接所述第一转轴，另一端铰接于所述第一活塞，所述第一缸体背离所述第一活塞的一端铰接于所述第一铰接座，以使所述第一缸体与所述第一活塞的直线驱动配合转化为所述第一活动支架围绕所述第一转轴轴向的圆周转动。
  8. 一种脱胶装置，其特征在于，包括脱胶槽、储水槽和如权利要求1-7任意一项所述的均分机构，所述喷射管设于所述脱胶槽内，所述第二液泵通过管道连接所述储水槽和所述喷射管，所述第二液泵能够将所述储水槽内的液体输送到所述喷射管。
  9. 根据权利要求8所述的脱胶装置，其中，所述喷射管包括可转动地设置于所述脱胶槽的相对的两侧的一对侧喷管。
  10. 根据权利要求8所述的脱胶装置，其中，所述喷射管包括设置于所述脱胶槽底部的底喷管。
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