WO2022230806A1 - 半導体モジュールおよび半導体モジュールの製造方法 - Google Patents

半導体モジュールおよび半導体モジュールの製造方法 Download PDF

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Publication number
WO2022230806A1
WO2022230806A1 PCT/JP2022/018722 JP2022018722W WO2022230806A1 WO 2022230806 A1 WO2022230806 A1 WO 2022230806A1 JP 2022018722 W JP2022018722 W JP 2022018722W WO 2022230806 A1 WO2022230806 A1 WO 2022230806A1
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Prior art keywords
bonding
semiconductor module
lead frame
sinterable
bonding material
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Ceased
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PCT/JP2022/018722
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English (en)
French (fr)
Japanese (ja)
Inventor
正人 前出
秀樹 新見
秀敏 北浦
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Panasonic Holdings Corp
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Panasonic Holdings Corp
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Priority to JP2023517507A priority Critical patent/JPWO2022230806A1/ja
Priority to CN202280031413.9A priority patent/CN117223093A/zh
Priority to US18/555,670 priority patent/US20240213207A1/en
Priority to EP22795719.8A priority patent/EP4333029A4/en
Publication of WO2022230806A1 publication Critical patent/WO2022230806A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present disclosure relates to a semiconductor module and a method of manufacturing a semiconductor module.
  • a power module equipped with a power semiconductor such as an insulated gate bipolar transistor (IGBT), silicon carbide (SiC), or gallium nitride (GaN) is used for this power converter.
  • IGBT insulated gate bipolar transistor
  • SiC silicon carbide
  • GaN gallium nitride
  • the semiconductor element is bonded to one main surface of the insulating substrate within the power module.
  • a sinterable bonding material as described in Patent Document 1, for example.
  • An object of the present disclosure is to provide a semiconductor module and a method of manufacturing a semiconductor module that can suppress the occurrence of defective bonding between a semiconductor element and a substrate member.
  • a semiconductor module of the present disclosure includes a semiconductor element, a joint portion configured to contain a sintered metal, a substrate member, and a lead frame, wherein the joint portion is a main surface of the semiconductor element and the substrate member. and at least one lead frame joining member that joins the main surface of the lead frame and the substrate member and has the same volume as the element joining member.
  • a sinterable bonding material is applied to a plurality of positions different from each other on the main surface of a substrate member so that the volume has the same shape, and the sinterable bonding material is applied.
  • a semiconductor element is placed on a part of the sinterable bonding material pre-dried and applied to the main surface, a lead frame is placed on another part of the sinterable bonding material, and the A sinterable bonding material is sintered to bond the semiconductor element and the substrate member, and to bond the lead frame and the substrate member.
  • the semiconductor module and the semiconductor module manufacturing method of the present disclosure it is possible to suppress the occurrence of poor bonding between the semiconductor element and the substrate member.
  • FIG. 1 is a longitudinal sectional view of a semiconductor module according to a first embodiment
  • FIG. FIG. 2 is a plan view showing an arrangement state of element bonding members and lead frame bonding members of the semiconductor module according to the first embodiment
  • Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG. Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG.
  • Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG. Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG.
  • Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG. Explanatory drawing of the manufacturing method of the semiconductor module seen in the cross section along the III-III line in FIG.
  • FIG. 2 is a plan view showing a state after application of the sinterable bonding material according to the first embodiment;
  • Cross-sectional view along line VV in Fig. 4 Vertical cross-sectional view of a semiconductor module according to the second embodiment
  • Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments
  • Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments
  • Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments
  • Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments Explanatory drawing of the manufacturing method of the semiconductor module according to the second and third embodiments
  • a plan view showing a state after applying a sinterable bonding material according to the second and third embodiments A plan view showing the shape of an element bonding member of a semiconductor module according to the third embodiment.
  • FIG. 1 is a longitudinal sectional view of a semiconductor module.
  • the semiconductor module 100 includes a semiconductor element 101, a joint portion 102, a substrate member 103, a heat dissipation member 104, a heat sink 105, and a lead frame 106.
  • illustration of power supply and signal terminals of the semiconductor element 101 is omitted.
  • the semiconductor element 101 is a power semiconductor element made up of an insulated gate bipolar transistor, silicon carbide, gallium nitride, or the like.
  • An electrode (not shown) is formed on the bottom surface of the semiconductor element 101 .
  • This electrode is composed of a metallized layer made of nickel plating and gold plating so that the semiconductor element 101 is strongly bonded to an element bonding member 102a of the bonding portion 102, which will be described later.
  • Also formed on the upper surface of the semiconductor element 101 are electrodes composed of metallized layers made of nickel plating and gold plating.
  • the semiconductor module 100 includes two semiconductor elements 101 in the first embodiment, the semiconductor module 100 may include one or three or more semiconductor elements 101 .
  • the joint portion 102 includes an element joint member 102a and a lead frame joint member 102b.
  • the element bonding member 102a and the lead frame bonding member 102b are each formed by sintering a sinterable bonding material.
  • the element bonding member 102a and the lead frame bonding member 102b are formed by sintering nanometer-sized particles (hereinafter referred to as “nanoparticles”) mainly composed of silver, copper, nickel, or gold. Contains sintered metal. By using silver as the main component of the sintered metal, the thermal conductivity of the element joining member 102a and the lead frame joining member 102b can be enhanced.
  • the thermal conductivity of the element bonding member 102a and the lead frame bonding member 102b can be enhanced, and the cost can be reduced compared to when silver is used.
  • nickel as the main component of the sintered metal
  • the mechanical strength of the element bonding member 102a and the lead frame bonding member 102b can be increased.
  • gold as the main component of the sintered metal, it is possible to enhance the ability to absorb stress due to elastic deformation of the element bonding member 102a and the lead frame bonding member 102b. Micronization of metal particles to nanometer size increases the surface energy of the particles.
  • sintering can be performed at a lower temperature than, for example, when micrometer-sized metal particles are used.
  • Solder, Sn-based alloy, or the like may be used as a material for forming the element bonding member 102a and the lead frame bonding member 102b.
  • the element bonding member 102a and the lead frame bonding member 102b may contain a sintered metal formed by sintering micrometer-sized particles whose main component is a metal such as silver, copper, nickel, or gold.
  • the element bonding member 102a bonds the semiconductor element 101 and the substrate member 103 together.
  • the lead frame joining member 102 b joins the substrate member 103 and the lead frame 106 . Detailed configurations of the element bonding member 102a and the lead frame bonding member 102b will be described later.
  • the substrate member 103 is a so-called DBC (Direct Bonded Copper) substrate composed of a metal heat transfer plate 103a, an insulating substrate 103b, and a metal heat dissipation plate 103c.
  • DBC Direct Bonded Copper
  • the metal heat transfer plate 103a is a plate-like member arranged on the upper surface of the insulating substrate 103b, and is made of copper. Metal heat transfer plate 103a conducts heat generated by semiconductor element 101 to metal heat dissipation plate 103c through insulating substrate 103b. The metal heat transfer plate 103a forms a circuit pattern. A semiconductor element 101 is bonded to the metal heat transfer plate 103a by an element bonding member 102a. The metal heat transfer plate 103a is connected to electrodes on the upper surface of the semiconductor element 101 by wires (not shown). Moreover, the metal heat transfer plate 103a is joined to the lead frame 106 by the lead frame joining member 102b.
  • Power is supplied to the semiconductor element 101 and communication between the semiconductor element 101 and an external device is performed via the lead frame 106 .
  • a metallized layer (not shown) is formed on the metal heat transfer plate 103a so that the metal heat transfer plate 103a is firmly bonded to the element bonding member 102a and the lead frame bonding member 102b.
  • the insulating substrate 103b is made of a ceramic compound such as Al 2 O 3 , Si 3 N 4 or AlN, and has insulating properties.
  • the metal radiator plate 103c is a plate-shaped member arranged on the lower surface of the insulating substrate 103b, and is made of copper.
  • the metal radiator plate 103c spreads the heat generated by the semiconductor element 101 to the surroundings.
  • the heat dissipation member 104 joins the metal heat dissipation plate 103 c and the heat sink 105 .
  • the heat dissipation member 104 widely spreads the heat generated by the semiconductor element 101 to prevent malfunction and destruction of the semiconductor module 100 due to the temperature rise of the semiconductor element 101 .
  • Solder, silicone, or the like is used as the heat dissipation member 104 .
  • the heat sink 105 plays a role of releasing heat generated by the semiconductor element 101 to the surroundings by air cooling.
  • a plurality of fins are formed on the lower surface of the heat sink 105 .
  • Aluminum or the like is used as the material of the heat sink 105 .
  • the lead frame 106 is a component for connecting the semiconductor module 100 to an external board.
  • the lead frame 106 is formed by etching a thin sheet of copper alloy or iron alloy, for example.
  • FIG. 2 is a plan view showing an arrangement state of an element joining member and a lead frame joining member of a semiconductor module.
  • the element bonding member 102a is arranged in a region where the semiconductor element 101 is mounted.
  • a total of 15 element bonding members 102a, 3 in the vertical direction and 5 in the horizontal direction in FIG. 2, are arranged between one semiconductor element 101 and the metal heat transfer plate 103a.
  • the element bonding member 102a is formed in a square piece shape smaller than the semiconductor element 101 in plan view.
  • the element bonding members 102a adjacent in the vertical direction and the horizontal direction in FIG. 2 are arranged at regular intervals.
  • the lead frame joining member 102b is arranged in the area where the lead frame 106 is mounted. Two lead frame joining members 102b arranged vertically in FIG. 2 are arranged between one lead frame 106 and a metal heat transfer plate 103a.
  • the lead frame bonding member 102b is formed in the same shape as the element bonding member 102a in plan view.
  • the two lead frame joining members 102b that join the lead frames 106 are arranged at the same interval as the interval between the adjacent element joining members 102a.
  • the shape of the element bonding member 102a and the lead frame bonding member 102b in plan view is not limited to a square, and may be a polygonal shape such as a rectangle, triangle, or pentagon, or may be circular.
  • the lengths of the element bonding member 102a in the vertical direction (first direction) and the horizontal direction (second direction) in FIG. 2 are preferably 0.2 mm or more and 1.0 mm or less. If the vertical and horizontal lengths of the element bonding member 102a are less than 0.2 mm, the element bonding member 102a is too small, and workability may deteriorate when arranging the element bonding member 102a.
  • the vertical and horizontal lengths of the element bonding members 102a exceed 1.0 mm, the element bonding members 102a are too large, and variations in the volatilization amount of the organic solvent in one element bonding member 102a increase. There is a risk of The vertical (first direction) and horizontal (second direction) lengths of the lead frame bonding member 102b in FIG. is preferred. Further, the interval between the element bonding members 102a arranged vertically in FIG. 2 may be different from the interval between the element joining members 102a arranged horizontally.
  • the interval between the element bonding members 102a adjacent to each other is preferably 0.1 mm or more and 1.0 mm or less. If the distance between the element bonding members 102a is less than 0.1 mm, the element bonding members 102a are too close to each other, which may make it difficult for the organic solvent in the element bonding members 102a to volatilize. On the other hand, when the distance between the element bonding members 102a exceeds 1.0 mm, it is necessary to reduce the area of each element bonding member 102a in order to arrange the same number of element bonding members 102a as shown in FIG. . Therefore, the bonding strength of each element bonding member 102a may decrease. For the same reason as for the element joining members 102a, the interval between the lead frame joining members 102b adjacent to each other is also preferably 0.1 mm or more and 1.0 mm or less.
  • FIG. 4 is a plan view showing a state after application of the sinterable bonding material.
  • a substrate member 103 composed of a metal heat transfer plate 103a, an insulating substrate 103b, and a metal heat dissipation plate 103c is prepared.
  • the sinterable bonding material 112 is applied to the arrangement positions of the element bonding members 102a and the lead frame bonding members 102b on the metal heat transfer plate 103a.
  • the sinterable bonding material 112 is a sinterable metal nano-bonding material obtained by dispersing nanoparticles having a surface protective film made of an organic substance in an organic solvent to form a paste.
  • a stabilizer is adsorbed on the surfaces of the nanoparticles that make up the sinterable bonding material 112 in order to prevent aggregation and reaction of the nanoparticles.
  • the sinterable bonding material 112 may be added with an organic solvent in order to improve the applicability (that is, printability) to the back electrode of the semiconductor element 101 and to improve the tackiness for holding the parts before sintering. It is pasted by This pasted sinterable bonding material 112 contains about 90% by weight of nanoparticles made of a metal such as silver, and the balance is an organic solvent such as carveol or perillyl alcohol and a stabilizing agent such as an amine compound. contains a drug.
  • the organic shell decomposes and the low-temperature sintering function of the nanoparticles is exhibited.
  • the nanoparticles are sintered together, and the nanoparticles are bonded to the material to be bonded. is achieved.
  • the sinterable bonding material 112 is applied, for example, by a general mask printing method using a metal mask and a squeegee.
  • the metal mask has openings of a uniform size in the areas where the sinterable bonding material 112 is to be applied.
  • the sinterable bonding material 112 having a desired size and thickness is applied to a desired position on the metal heat transfer plate 103a.
  • the size in plan view is about 0.5 mm ⁇ 0.5 mm.
  • a sinterable bonding material 112 having a thickness of about 100 ⁇ m is applied.
  • the sinterable bonding material 112 is pre-dried to evaporate the organic solvent 112a contained in the sinterable bonding material 112, thereby sintering.
  • the adhesive material 112 is dried. Pre-drying is performed at a temperature of about 50° C. or more and 70° C. or less for about 1 minute or more and 60 minutes or less.
  • the semiconductor element 101 and the lead frame 106 are placed on the sinterable bonding material 112 as shown in FIG. 3D.
  • a jig 400 is used to press the semiconductor element 101 and the lead frame 106 from above so that the sinterable bonding material 112 has a desired thickness.
  • the sinterable bonding materials 112 are pressed so that the thickness of all the sinterable bonding materials 112 is about 50 ⁇ m.
  • the semiconductor element 101, the sinterable bonding material 112, and the substrate member 103 are heated at a temperature of 250° C. or more and 310° C. or less for 30 minutes or more and 240 minutes.
  • the element bonding member 102a and the lead frame bonding member 102b are formed by heating and sintering the sinterable bonding material 112 by applying the following heat.
  • the jig 400 is removed. After that, using a well-known method, the metal heat sink 103c and the heat sink 105 are joined by the heat dissipation member 104, and the semiconductor module 100 is completed.
  • the semiconductor module 100 that can suppress defective bonding between the semiconductor element 101 and the lead frame 106 and the substrate member 103 . Furthermore, voids in the semiconductor element 101 and the lead frame 106 are reduced, so that the heat dissipation of the semiconductor module 100 can be improved.
  • FIG. 4 is a plan view showing a state after application of the sinterable bonding material.
  • 5 is a cross-sectional view taken along line VV of FIG. 4.
  • the sinterable bonding material 112 is added with an organic solvent in order to ensure printability for applying paste to the electrodes and tackiness for holding the parts before sintering.
  • the organic solvent remaining in the sinterable bonding material 112 at the start of sintering causes the generation of voids. Therefore, it is necessary to reduce the content of the organic solvent in advance by pre-drying before sintering. Therefore, the pre-drying step shown in FIG. 3C is performed.
  • the sinterable bonding material 112 is dried until the tack force of the sinterable bonding material 112 reaches the minimum necessary level. It is important to volatilize the contained organic solvent 112a.
  • the organic solvent 112a moves inside the sinterable bonding material 112 and evaporates outward from the upper surface and side surfaces of the sinterable bonding material 112. .
  • the larger the size of the sinterable bonding material 112 the longer the moving distance in the direction from the inside toward the side surface, and the more difficult it is for the organic solvent 112a to volatilize. Therefore, when the size of the sinterable bonding material 112 arranged on the metal heat transfer plate 103a in plan view differs from each other, for example, according to the size or type of the members arranged thereon, the following problems arise. That is, the amount of the organic solvent 112a remaining inside the sinterable bonding material 112 after predrying, that is, the dry state of the sinterable bonding material 112 tends to vary.
  • the sinterable bonding material 112 on the metal heat transfer plate 103a is , are formed in the shape of small pieces of the same size in a plan view, which are arranged at predetermined intervals.
  • an element bonding region 103d indicated by a dashed line to which the semiconductor device 101 is bonded and a lead frame bonding region 103e indicated by a dashed line to which the lead frame 106 is bonded have different sizes in plan view.
  • small piece-shaped sinterable bonding materials 112 having the same size in plan view are arranged at predetermined intervals.
  • the rate at which the organic solvent 112a decreases from each sinterable bonding material 112 during predrying (amount of decrease per unit time), and the final amount of decrease from each sinterable bonding material 112, that is, each sinterability
  • the amount of the organic solvent 112a remaining in the bonding material 112 can be made uniform. That is, it is possible to reduce variations in the dry state of the sinterable bonding material 112 after predrying. Therefore, it is possible to suppress the occurrence of cracks in the element bonding member 102a and the lead frame bonding member 102b due to the dry state of the sinterable bonding material 112 after predrying. Poor bonding with 103 can be suppressed.
  • the arrangement of the uniformly shaped sinterable bonding materials 112 is not limited to the arrangement at uniform intervals as shown in FIG.
  • the interval between the sinterable bonding materials 112 can be appropriately selected according to the circuit pattern of the metal heat transfer plate 103a and the desired thermal resistance.
  • the element bonding member 102a is formed in a square piece shape smaller than the semiconductor element 101 in plan view, it may be formed in a square shape substantially the same as the semiconductor element 101 in plan view.
  • the sinterable bonding material 112 may not have the shape of a small piece having exactly the same size when viewed from above, and may have the shape of a small piece having the same volume.
  • FIG. 6 is a longitudinal sectional view of a semiconductor module.
  • the semiconductor module 200 includes a semiconductor element 101, an element bonding member 202, a substrate member 103, a heat dissipation member 104, and a heat sink 105.
  • illustration of power supply terminals and signal terminals of the semiconductor element 101 is omitted.
  • An electrode (not shown) is formed on the bottom surface of the semiconductor element 101 .
  • This electrode is composed of a metallized layer made of nickel plating and gold plating so that the semiconductor element 101 is strongly bonded to the element bonding member 202 .
  • the semiconductor module 200 includes one semiconductor element 101 in the second embodiment, the semiconductor module 200 may include a plurality of semiconductor elements 101 .
  • the element bonding member 202 is formed by sintering a sinterable bonding material.
  • the element bonding member 202 contains a sintered metal formed by sintering nanoparticles.
  • silver As the main component of the sintered metal, the thermal conductivity of the element bonding member 202 can be enhanced.
  • copper as the main component of the sintered metal, the thermal conductivity of the element bonding member 202 can be enhanced, and the cost can be reduced as compared with the case of using silver.
  • nickel as the main component of the sintered metal, the mechanical strength of the element bonding member 202 can be increased.
  • the ability to absorb stress due to elastic deformation of the element bonding member 202 can be enhanced.
  • metal particles are pulverized to a nanometer size, the proportion of atoms with high surface energy in the particle surface increases. Also, the smaller the particle size, the lower the melting point, which makes it possible to sinter at a temperature much lower than the bulk melting point.
  • the element bonding member 202 bonds the semiconductor element 101 and the substrate member 103 together. A detailed configuration of the element bonding member 202 will be described later.
  • a semiconductor element 101 is bonded to the metal heat transfer plate 103 a of the substrate member 103 by an element bonding member 202 .
  • the metal heat transfer plate 103a is connected to electrodes on the upper surface of the semiconductor element 101 by wires (not shown). Also, the metal heat transfer plate 103a is joined to a lead frame (not shown). Power is supplied to the semiconductor element 101 and communication between the semiconductor element 101 and an external device is performed via the lead frame.
  • a metallized layer (not shown) is formed on the metal heat transfer plate 103 a so that the metal heat transfer plate 103 a is firmly bonded to the element bonding member 202 .
  • the heat dissipation member 104 prevents malfunction and destruction of the semiconductor module 200 caused by the temperature rise of the semiconductor element 101 by widely transmitting the heat generated by the semiconductor element 101 to the surroundings.
  • FIG. 7 is a plan view showing the shape of the element bonding member of the semiconductor module.
  • the element bonding member 202 is formed in a rectangular shape that is substantially the same as the semiconductor element 101 in plan view.
  • the element bonding member 202 is formed in a shape in which a total of 16 circles, 4 circles vertically and 4 circles horizontally in FIG. 7, are partially overlapped when viewed from above.
  • the element bonding member 202 is formed with a notch 202a and a through hole 202b.
  • the notch 202 a is formed between the semiconductor element 101 and the substrate member 103 .
  • Three cutouts 202a are formed along each of the four sides of the semiconductor element 101 at regular intervals.
  • the notch 202a is formed in a substantially isosceles triangular shape whose equilateral sides are arc-shaped. Due to the notch 202a, the outer periphery of the element bonding member 202 has a shape in which a plurality of circular arcs are connected.
  • Through hole 202 b is formed between semiconductor element 101 and substrate member 103 .
  • the through hole 202b is formed so as not to connect with the notch 202a.
  • Three through-holes 202b are formed at equal intervals on a straight line connecting vertically aligned notches 202a in FIG.
  • the through hole 202b is formed in a substantially square shape with four arc-shaped sides. At least one of the notch 202a and the through hole 202b may be formed outside the semiconductor element 101 in plan view. Also, the through hole 202b may be connected to the notch 202a.
  • the notch 202a preferably has a base length of 0.2 mm or more and 7 mm or less and an equal side length of 1 mm or more and 5 mm or less.
  • the length of each side of the through hole 202b is preferably 0.1 mm or more and 3.5 mm or less.
  • the twelve cutouts 202a are formed in the same shape, but one or more of these cutouts 202a are formed in a shape different from the other cutouts 202a. good too.
  • the nine through holes 202b are formed in the same shape, but one or more of these through holes 202b are formed in a shape different from the other through holes 202b. good too.
  • the shape of the element bonding member 202 can be appropriately selected according to the circuit pattern and desired thermal resistance of the metal heat transfer plate 103a.
  • FIG. 9 is a plan view showing a state after application of the sinterable bonding material.
  • a substrate member 103 composed of a metal heat transfer plate 103a, an insulating substrate 103b, and a metal heat dissipation plate 103c is prepared.
  • a sinterable bonding material 112 is applied onto one main surface of the metal heat transfer plate 103a.
  • the sinterable bonding material 112 is applied to a total of 16 squares arranged in four squares in the vertical direction and four squares in the horizontal direction in FIG. That is, the sinterable bonding material 112 is applied such that a plurality of small pieces of a predetermined size are arranged at predetermined intervals.
  • the small piece is preferably a square with a side of 0.5 mm or more and 5 mm or less, more preferably a square with a side of 0.5 mm or more and 2 mm or less.
  • the interval between adjacent small pieces is preferably 0.1 mm or more and 0.3 mm or less, more preferably 0.1 mm or more and 0.2 mm or less.
  • the shape of the small piece may be square, rectangular, circular, oval, or the like.
  • the sinterable bonding material 112 is applied onto the metal heat transfer plate 103a in a predetermined size and thickness by a general mask printing method using a metal mask and squeegee or by dispenser application.
  • the thickness of the applied sinterable bonding material 112 is about 100 ⁇ m.
  • the sinterable bonding material 112 is pre-dried to evaporate the organic solvent 112a contained in the sinterable bonding material 112, whereby sintering is performed.
  • the adhesive material 112 is dried. Pre-drying is performed at a temperature of about 50° C. or more and 70° C. or less for about 1 minute or more and 60 minutes or less. If the sinterable bonding material 112 contains a relatively small amount of the organic solvent 112a and has sufficient coatability and tackiness, the preliminary drying may not be performed.
  • the semiconductor element 101 is placed on the sinterable bonding material 112 as shown in FIG. It is pressed so that it becomes the thickness of the bonding material 112 .
  • the small piece-shaped sinterable bonding material 112 shown in FIG. 9 spreads, and adjacent small pieces are connected to form an island.
  • the term "island” means a shape that can be regarded as circular, elliptical, or polygonal.
  • the sinterable bonding material 112 has the same shape as the element bonding member 202 of the semiconductor module 200 in which the notch 202a and the through hole 202b are formed as shown in FIG.
  • the semiconductor element 101, the sinterable bonding material 112, and the substrate member 103 are heated at a temperature of 250° C. or more and 310° C. or less for 30 minutes or more and 240 minutes.
  • the element bonding member 202 is formed by heating the sinterable bonding material 112 below and sintering it.
  • the jig 500 is removed. After that, using a well-known method, the metal heat sink 103c and the heat sink 105 are joined by the heat dissipation member 104, and the semiconductor module 200 is completed.
  • a plurality of small piece-shaped sinterable bonding materials 112 arranged apart from each other at a predetermined interval are pressed by a jig 500 and connected to form one island, and then sintered.
  • the organic solvent 112a contained in the sinterable bonding material 112 below the peripheral portion of the semiconductor element 101 is sintered below the central portion. Since it decreases faster than the organic solvent 112a contained in the adhesive bonding material 112, there is a possibility that the element bonding member formed below the peripheral portion may crack.
  • the rate of decrease of the organic solvent 112a in the entire sinterable bonding material 112 can be made uniform. It is possible to suppress the occurrence of cracks in the element bonding member 202 . Therefore, it is possible to provide the semiconductor module 200 in which defective bonding between the semiconductor element 101 and the substrate member 103 is suppressed. It should be noted that when a plurality of small piece-shaped sinterable bonding materials 112 are connected to each other and combined into one, the organic solvent 112a in the entire sinterable bonding material 112 can be reduced even if the shape is not necessarily island-shaped. You can even out the speed.
  • the shape that the plurality of small piece-shaped sinterable bonding materials 112 are connected to each other does not have to be an island shape.
  • the rate of decrease of the organic solvent 112a in the entire sinterable bonding material 112 can be made more uniform.
  • the sinterable bonding material 112 is pre-dried before sintering the sinterable bonding material 112, the amount of decrease in the organic solvent 112a of each sinterable bonding material 112 can be made uniform. The dry state before sintering can be made uniform.
  • one island-shaped sinterable bonding material 112 is formed by pressing and connecting a plurality of small piece-shaped sinterable bonding materials 112, one small piece-shaped sinterable bonding material 112 is pressed.
  • the sinterable bonding material 112 can be spread to the vicinity of the corner of the semiconductor element 101 as compared with the case.
  • the contact area between the element bonding member 202 and the semiconductor element 101 and substrate member 103 can be increased. Therefore, the contact area between the element bonding member 202 and the semiconductor element 101 and the substrate member 103 can be increased, and the heat dissipation of the semiconductor element 101 can be improved.
  • FIG. 10 is a plan view showing the shape of the element bonding member of the semiconductor module.
  • the semiconductor module 300 according to the third embodiment differs from the semiconductor module 200 according to the second embodiment in that the through hole 202b is not formed in the element bonding member 302. , are the same as those of the semiconductor module 200 .
  • the twelve cutouts 202a are also formed in the same shape, but one or more of these cutouts 202a may be formed in a shape different from the other cutouts 202a.
  • the shape of the element bonding member 302 can be appropriately selected according to the circuit pattern of the metal heat transfer plate 103a and the desired thermal resistance.
  • the element bonding member 302 is formed by changing the conditions of the process performed in the second embodiment in the subsequent process. The following two methods can be used for forming such an element bonding member 302 .
  • the pre-drying conditions shown in FIG. 8C are changed from those of the second embodiment. Specifically, the preliminary drying is performed so that the amount of evaporation of the organic solvent 112a is less than the amount of evaporation in the second embodiment, that is, the remaining amount of the organic solvent 112a is greater than the remaining amount in the second embodiment. I do.
  • a step of pressing the sinterable bonding material 112 with a jig 500 shown in FIG. 8D is performed. By this pressing, the sinterable bonding material 112 becomes the same shape as the element bonding member 202 in which the notch 202a and the through hole 202b as shown in FIG. 7 are formed.
  • the semiconductor module 300 is completed by performing the steps after the step shown in FIG. 8E under the same conditions as in the second embodiment.
  • the third embodiment similarly to the second embodiment, it is possible to provide a semiconductor module 300 capable of suppressing poor bonding between the semiconductor element 101 and the substrate member 103 . Since the through hole 202b is not formed in the element bonding member 302, the bonding area between the element bonding member 302 and the semiconductor element 101 and the substrate member 103 can be increased compared to the semiconductor module 200 of the second embodiment. , the heat dissipation of the semiconductor element 101 can be further improved.
  • a semiconductor module according to the present disclosure includes a semiconductor element, a substrate member, and an element bonding member that joins the semiconductor element and the substrate member and includes a sintered metal.
  • a notch is formed on the outer periphery.
  • the semiconductor module according to (3) above, wherein the through hole is formed between the semiconductor element and the substrate member.
  • a sinterable bonding material is applied on the main surface of a substrate member in a plurality of small pieces separated from each other, and a semiconductor element is placed on the sinterable bonding material. and pressing the semiconductor element toward the substrate member to spread the sinterable bonding material, thereby connecting the sinterable bonding material to each other and sintering the connected sinterable bonding material. , forming an element bonding member.
  • an element similar to the element bonding members 202 and 302 may be used for bonding a lead frame for connecting a power source to a power terminal of the semiconductor element 101 and transmitting a signal to a signal terminal, and a circuit pattern of a metal heat transfer plate 103a.
  • a joining member may be used.
  • solder, Sn-based alloy, or the like may be used as the material for forming the element bonding members 202 and 302 .
  • the element bonding members 202 and 302 may contain a sintered metal formed by sintering micrometer-sized particles whose main component is a metal such as silver, copper, nickel, or gold. .
  • the present disclosure can be applied to semiconductor modules and semiconductor module manufacturing methods.
  • REFERENCE SIGNS LIST 100, 200, 300 semiconductor module 101 semiconductor element 102 joint portion 102a element joint member 102b lead frame joint member 103 substrate member 103a metal heat transfer plate 103b insulating substrate 103c metal radiator plate 103d element joint region 103e lead frame joint region 104 heat dissipation member 105 Heat sink 106 Lead frame 112 Sinterable bonding material 112a Organic solvent 202, 302 Element bonding member 202a Notch 202b Through hole 400, 500 Jig

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PCT/JP2022/018722 2021-04-30 2022-04-25 半導体モジュールおよび半導体モジュールの製造方法 Ceased WO2022230806A1 (ja)

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US18/555,670 US20240213207A1 (en) 2021-04-30 2022-04-25 Semiconductor module and method for manufacturing semiconductor module
EP22795719.8A EP4333029A4 (en) 2021-04-30 2022-04-25 SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING THE SEMICONDUCTOR MODULE

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