WO2022120319A2 - Magnetic core with hard ferromagnetic biasing layers and structures containing same - Google Patents

Magnetic core with hard ferromagnetic biasing layers and structures containing same Download PDF

Info

Publication number
WO2022120319A2
WO2022120319A2 PCT/US2021/072400 US2021072400W WO2022120319A2 WO 2022120319 A2 WO2022120319 A2 WO 2022120319A2 US 2021072400 W US2021072400 W US 2021072400W WO 2022120319 A2 WO2022120319 A2 WO 2022120319A2
Authority
WO
WIPO (PCT)
Prior art keywords
soft
ferromagnetic layer
hard
ferromagnetic
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2021/072400
Other languages
English (en)
French (fr)
Other versions
WO2022120319A3 (en
Inventor
Michael Lekas
Ryan DAVIES
Noah STURCKEN
Denis Shishkov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferric Inc USA
Original Assignee
Ferric Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferric Inc USA filed Critical Ferric Inc USA
Priority to JP2023531532A priority Critical patent/JP7792188B2/ja
Priority to KR1020237019208A priority patent/KR102857258B1/ko
Priority to DE112021005049.4T priority patent/DE112021005049T5/de
Publication of WO2022120319A2 publication Critical patent/WO2022120319A2/en
Publication of WO2022120319A3 publication Critical patent/WO2022120319A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0306—Metals or alloys, e.g. LAVES phase alloys of the MgCu2-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H01F2003/103—Magnetic circuits with permanent magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0066—Printed inductances with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate

Definitions

  • This application relates generally to magnetic cores and devices that include magnetic cores such as inductors.
  • Inductors for microelectronics include an alternating arrangement of soft ferromagnetic layers and insulating layers.
  • An example of a typical horizontally- laminated magnetic core 10 is illustrated in Fig. 1 A.
  • the core includes soft ferromagnetic layers 100 with an insulator layer 110 disposed between neighboring soft ferromagnetic layers 100.
  • the coil is configured to generate a magnetic flux through the soft ferromagnetic layers 100, which results in alternating magnetization states 120, as indicated by the arrows.
  • Fig. 1 B illustrates a top view of the top soft ferromagnetic layer 100 in core 10.
  • the top insulator 110 is not illustrated in Fig. 1 B for clarity.
  • Magnetic domain walls 140 form between the magnetic domains 130 in which some of the magnetic moments 145 are not aligned with either magnetic domain 130. The applied field from the inductor coil causes these magnetic moments 145 to reorient, which creates both hysteresis and eddy current power loss.
  • Example embodiments described herein have innovative features, no single one of which is indispensable or solely responsible for their desirable attributes.
  • the following description and drawings set forth certain illustrative implementations of the disclosure in detail, which are indicative of several exemplary ways in which the various principles of the disclosure may be carried out.
  • the illustrative examples, however, are not exhaustive of the many possible embodiments of the disclosure. Without limiting the scope of the claims, some of the advantageous features will now be summarized. Other objects, advantages and novel features of the disclosure will be set forth in the following detailed description of the disclosure when considered in conjunction with the drawings, which are intended to illustrate, not limit, the invention.
  • An aspect of the invention is directed to a horizontally-laminated planar magnetic core comprising: a plurality of ferromagnetic layers that includes a plurality of hard ferromagnetic layers and a plurality of soft ferromagnetic layers, wherein: each ferromagnetic layer comprises one of the soft ferromagnetic layers or one of the hard ferromagnetic layers, and each hard ferromagnetic layer is a neighboring ferromagnetic layer of at least one soft ferromagnetic layer.
  • the horizontally-laminated planar magnetic core further comprises a plurality of insulating layers, each insulating layer disposed between adjacent ferromagnetic layers, wherein each ferromagnetic layer has an easy axis of magnetization parallel to a principal plane of the planar magnetic core, and the easy axes of magnetization are aligned.
  • the ferromagnetic layers are stacked along a height of the planar magnetic core.
  • the plurality of hard ferromagnetic layers includes a top hard ferromagnetic layer disposed as a top ferromagnetic layer.
  • the plurality of hard ferromagnetic layers includes a bottom hard ferromagnetic layer disposed as a bottom ferromagnetic layer.
  • the plurality of soft ferromagnetic layers are disposed between the top and bottom hard ferromagnetic layers.
  • the plurality of soft ferromagnetic layers comprises N soft ferromagnetic layers, where N is an odd integer greater than or equal to 3.
  • a soft ferromagnetic thickness of each soft ferromagnetic layer is the same, a hard ferromagnetic thickness of each hard ferromagnetic layer is the same, and the hard ferromagnetic thickness is related to the soft ferromagnetic thickness.
  • a ratio of the hard ferromagnetic thickness to the soft ferromagnetic thickness is where M S _ soft is the saturation magnetization of each soft ferromagnetic layer and M S _hard is the saturation magnetization of each hard ferromagnetic layer.
  • the top and bottom hard ferromagnetic layers are each magnetized to produce a respective bias magnetic flux through the top and bottom hard ferromagnetic layers, respectively, in a first direction that is parallel to the easy axes of magnetization in the top and bottom hard ferromagnetic layers.
  • the respective bias magnetic flux through the top hard ferromagnetic layer forms a closed loop through a first neighboring soft ferromagnetic layer
  • the respective bias magnetic flux through the bottom hard ferromagnetic layer forms a closed loop through a second neighboring soft ferromagnetic layer
  • the respective bias magnetic flux passes through the first and second neighboring soft ferromagnetic layers in a second direction that is opposite to the first direction.
  • the respective bias magnetic flux through the first and second neighboring soft ferromagnetic layers induces a magnetic flux through the first and second neighboring soft ferromagnetic layers in the second direction
  • the induced magnetic flux through the first neighboring soft ferromagnetic layer forms a closed loop through a third neighboring soft ferromagnetic layer in the first direction
  • the induced magnetic flux through the second neighboring soft ferromagnetic layer forms a closed loop through a fourth neighboring soft ferromagnetic layer in the first direction
  • the top hard ferromagnetic layer and the third neighboring soft ferromagnetic layer are the neighboring ferromagnetic layers of the first neighboring soft ferromagnetic layer
  • the bottom hard ferromagnetic layer and the fourth neighboring soft ferromagnetic layer are the neighboring ferromagnetic layers of the second neighboring soft ferromagnetic layer.
  • the hard and soft ferromagnetic layers comprise cobalt, iron, and/or nickel.
  • the insulating layers comprise: (a) aluminum, cobalt, chromium, silicon, tantalum, titanium, and/or zirconium, or (b) a compound of (1) aluminum, cobalt, chromium, silicon, tantalum, titanium, and/or zirconium and (2) oxygen and/or nitrogen.
  • each hard ferromagnetic layer has a coercivity above 50 Oe
  • each soft ferromagnetic layer has a coercivity below 1 Oe.
  • a thickness of each ferromagnetic layer is in a range of about 10 nm to about 1 ,000 nm, the thickness measured with respect to an axis that is orthogonal to the principal plane of the planar magnetic core. In one or more embodiments, a thickness of each insulating layer is in a range of about 1 nm to about 50 nm, the thickness of each insulating layer measured with respect to the axis. In one or more embodiments, a total thickness of the core is less than or equal to 100,000 nm, the total thickness measured with respect to the axis.
  • Another aspect of the invention is directed to a horizontally-laminated planar magnetic core comprising: a plurality of soft-hard ferromagnetic layer pairs, each soft-hard ferromagnetic layer pair including a soft ferromagnetic layer and a hard ferromagnetic layer; an intra-pair spacer layer disposed between the soft ferromagnetic layer and the hard ferromagnetic layer in each soft-hard ferromagnetic layer pair; an inter-pair spacer layer disposed between neighboring soft-hard ferromagnetic layer pairs, wherein an inter-pair spacer thickness of each inter-pair spacer layer is greater than an intra-pair spacer thickness of each intra-pair spacer layer, and the inter-pair spacer thickness and the intra-pair spacer thickness are measured with respect to an axis that is orthogonal to a major plane of the core.
  • a relative position of the soft ferromagnetic layer with respect to the hard ferromagnetic layer is the same. In one or more embodiments, for each soft-hard ferromagnetic pair, the soft ferromagnetic layer is disposed below the hard ferromagnetic layer.
  • the horizontally-laminated planar magnetic core further comprises a first inter-pair spacer layer disposed between a first soft-hard ferromagnetic layer pair and a second soft-hard ferromagnetic layer pair; and a second inter-pair spacer layer disposed between the second soft-hard ferromagnetic layer pair and a third soft-hard ferromagnetic layer pair, the second soft-hard ferromagnetic layer pair disposed between the first and third soft-hard ferromagnetic layer pairs.
  • a soft ferromagnetic thickness of each soft ferromagnetic layer is the same, a hard ferromagnetic thickness of each hard ferromagnetic layer is the same, the soft and hard ferromagnetic thicknesses are measured with respect to the axis, and the hard ferromagnetic thickness is related to the soft ferromagnetic thickness.
  • the hard ferromagnetic layer is magnetized to produce a bias magnetic flux through the hard ferromagnetic layer in a first direction that is parallel to an easy axis of magnetization in the hard ferromagnetic layer, the easy axis of magnetization disposed within a major plane of the hard ferromagnetic layer, and the bias magnetic flux forms a closed loop only through the soft ferromagnetic layer in a second direction that is parallel to an easy axis of magnetization in the soft ferromagnetic layer, the easy axis of magnetization disposed within a major plane of the soft ferromagnetic layer.
  • the bias magnetic flux through the soft ferromagnetic layer induces a magnetic flux through the soft ferromagnetic layer in the second direction, and the induced magnetic flux forms a closed loop only through the hard ferromagnetic layer in the first direction.
  • a ratio of the hard ferromagnetic thickness to the soft ferromagnetic thickness is where M S _ soft is the saturation magnetization of each soft ferromagnetic layer and M S _ hard is the saturation magnetization of each hard ferromagnetic layer.
  • the inter-pair spacer thickness of the first and second inter-pair spacer layers is the same, the intra-pair spacer thickness of each intra-pair spacer layer is the same, and the inter- pair spacer thickness is in a range of 2 to 10 times the intra-layer spacer thickness.
  • the intra-pair spacer layers and the inter-pair spacer layers comprise an insulator material.
  • Yet another aspect of the invention is directed to an inductor comprising: a horizontally-laminated planar magnetic core comprising: a plurality of ferromagnetic layers that includes a plurality of hard ferromagnetic layers and a plurality of soft ferromagnetic layers, wherein each ferromagnetic layer comprises one of the soft ferromagnetic layers or one of the hard ferromagnetic layers, and each hard ferromagnetic layer is a neighboring ferromagnetic layer of at least one neighboring soft ferromagnetic layer.
  • the inductor further comprises a plurality of insulating layers, each insulating layer disposed between adjacent ferromagnetic layers.
  • Each ferromagnetic layer has an easy axis of magnetization parallel to a principal plane of the planar magnetic core, and the easy axes of magnetization are aligned.
  • the inductor further comprises a conductive winding that turns around in a generally spiral manner on the outside of said planar laminated magnetic core.
  • each ferromagnetic layer has a hard axis of magnetization that is orthogonal to the easy axis of magnetization within a major plane of the respective ferromagnetic layer, and the hard axes of magnetization are aligned, and the conductive winding is configured to produce an inductor coil magnetic flux through the horizontally-laminated planar magnetic core in a direction parallel to the hard axis of magnetization in each ferromagnetic layer.
  • the plurality of hard ferromagnetic layers includes a top hard ferromagnetic layer disposed as a top ferromagnetic layer and a bottom hard ferromagnetic layer disposed as a bottom ferromagnetic layer, the plurality of soft ferromagnetic layers are disposed between the top and bottom hard ferromagnetic layers, each of the top and bottom hard ferromagnetic layers is magnetized to produce a respective bias magnetic flux through the top and bottom hard ferromagnetic layers, respectively, in a first direction that is parallel to the easy axes of magnetization in the top and bottom hard ferromagnetic layers, the bias magnetic flux through the top hard ferromagnetic layer forms a closed loop through a first neighboring soft ferromagnetic layer, the bias magnetic flux through the bottom hard ferromagnetic layer forms a closed loop through a second neighboring soft ferromagnetic layer, and the bias magnetic flux passes through the first and second neighboring soft ferromagnetic layers in a second direction that is opposite
  • the bias magnetic flux through the first and second neighboring soft ferromagnetic layers induces a magnetic flux through the first and second neighboring soft ferromagnetic layers in the second direction
  • the induced magnetic flux through the first neighboring soft ferromagnetic layer forms a closed loop through a third neighboring soft ferromagnetic layer in the first direction
  • the induced magnetic flux through the second neighboring soft ferromagnetic layer forms a closed loop through a fourth neighboring soft ferromagnetic layer in the first direction
  • the top hard ferromagnetic layer and the third neighboring soft ferromagnetic layer are the neighboring ferromagnetic layers of the first neighboring soft ferromagnetic layer
  • the bottom hard ferromagnetic layer and the fourth neighboring soft ferromagnetic layer are the neighboring ferromagnetic layers of the second neighboring soft ferromagnetic layer.
  • Another aspect of the invention is directed to a structure comprising a semiconductor integrated circuit comprising a multilevel wiring network formed on a substrate, wherein the inductor in integrated into the multilevel wiring network.
  • Yet another aspect of the invention is directed to a method of manufacturing comprising: depositing, over a semiconductor substrate, a plurality of ferromagnetic layers that includes a plurality of hard ferromagnetic layers and a plurality of soft ferromagnetic layers, wherein: each ferromagnetic layer comprises one of the soft ferromagnetic layers or one of the hard ferromagnetic layers, and each hard ferromagnetic layer is a neighboring ferromagnetic layer of at least one neighboring soft ferromagnetic layer.
  • the method further comprises depositing an insulating layer between adjacent ferromagnetic layers; inducing an easy axis of magnetization in each ferromagnetic layer, the easy axes of magnetization aligned and parallel to a top planar surface of the semiconductor substrate; magnetizing each hard ferromagnetic layer so as to produce a bias magnetic flux through the respective hard ferromagnetic layer in a first direction, the bias magnetic flux parallel to the easy axis of magnetization in the respective hard ferromagnetic layer; and defining a horizontally-laminated planar magnetic core that comprises the plurality of ferromagnetic layers and the insulating layers.
  • the method further comprises defining a hard axis of magnetization in each ferromagnetic layer, the hard axis of magnetization orthogonal to the easy axis of magnetization within a major plane of each ferromagnetic layer; and forming a conductive winding around the horizontally- laminated planar magnetic core, the conductive winding configured to form an inductor coil magnetic field that passes through the horizontally-laminated planar magnetic core in a direction parallel to the hard axis of magnetization in each ferromagnetic layer.
  • the method further comprises depositing a top hard ferromagnetic layer as a top ferromagnetic layer; depositing a bottom hard ferromagnetic layer as a bottom ferromagnetic layer; and depositing the plurality of soft ferromagnetic layers between the bottom and top hard ferromagnetic layers.
  • a ratio of a hard ferromagnetic thickness of each hard ferromagnetic layer to a soft ferromagnetic thickness of each soft ferromagnetic layer is where M S_ soft is the saturation magnetization of each soft ferromagnetic layer and M S _hard is the saturation magnetization of each hard ferromagnetic layer, and the soft and hard ferromagnetic thicknesses are measured with respect to an axis that is orthogonal to the top planar surface of the semiconductor substrate.
  • the method further comprises depositing a plurality of soft-hard ferromagnetic layer pairs, each soft-hard ferromagnetic layer pair including one of the soft ferromagnetic layers and one of the hard ferromagnetic layers; depositing an intra-pair spacer layer between the soft ferromagnetic layer and the hard ferromagnetic layer in each soft-hard ferromagnetic layer pair; and depositing an inter-pair spacer layer between neighboring soft-hard ferromagnetic layer pairs, wherein each insulator layer comprises one of the intra-pair spacer layers or one of the inter-pair spacer layers, an inter-pair spacer layer thickness of each inter-pair spacer layer is greater than an intra-pair spacer layer thickness of each intra-pair spacer layer, and the inter-pair spacer layer thickness and the intra-pair spacer layer thickness are measured with respect to an axis that is orthogonal to the top planar surface of the semiconductor substrate.
  • a ratio of a hard ferromagnetic thickness of each hard ferromagnetic layer to a soft ferromagnetic thickness of each soft ferromagnetic layer is where M S_ soft is the saturation magnetization of each soft ferromagnetic layer and M S _hard is the saturation magnetization of each hard ferromagnetic layer, and the soft and hard ferromagnetic thicknesses are measured with respect to the axis.
  • Fig. 1A is a cross-sectional view of an existing horizontally-laminated magnetic core.
  • Fig. 1 B is a top view of the horizontally-laminated magnetic core illustrated in Fig. 1 A.
  • Fig. 2 is a cross-sectional view of a planar magnetic core according to an embodiment.
  • Fig. 3 is an exploded perspective view of the planar magnetic core illustrated in Fig. 2.
  • Fig. 4 is a cross-sectional view of a planar magnetic core according to another embodiment.
  • Fig. 5 is a cross-sectional view of a planar magnetic core according to another embodiment.
  • Fig. 6 is an exploded perspective view of the planar magnetic core illustrated in Fig. 5.
  • Fig. 7 is a flow chart of a method of manufacturing a semiconductor device according to an embodiment.
  • Fig. 8 is a representative cross section of a magnetic core inductor integrated into a semiconductor device on a substrate according to an embodiment.
  • a horizontally-laminated planar magnetic core includes a plurality of ferromagnetic layers, which includes multiple hard ferromagnetic bias layers and multiple soft ferromagnetic layers. At least one soft ferromagnetic layer is the neighboring ferromagnetic layer of each hard ferromagnetic bias layer. Each hard ferromagnetic bias layer is magnetized so it creates an in-plane bias magnetic flux through the respective hard ferromagnetic bias layer in a first direction. The bias magnetic flux forms a closed path by passing through the neighboring soft ferromagnetic layer in a second direction that is opposite to the first direction (e.g., the first and second directions are antiparallel).
  • the ferromagnetic layers are anisotropic such that their easy axes of magnetization are parallel to one another and to the first and second directions.
  • the hard axes of magnetization of the ferromagnetic layers are orthogonal to the easy axes of magnetization within the major plane of the respective ferromagnetic layers.
  • the bias magnetic flux through the neighboring soft ferromagnetic layer sets the preferential direction for the magnetization of the soft ferromagnetic layer magnetic moments, such that an inter-layer closed path for magnetic flux is formed between the hard ferromagnetic bias layer and the soft ferromagnetic layer(s). This reduces the number of domain walls that are formed in the soft ferromagnetic layer since the magnetic flux now closes in the adjacent hard ferromagnetic bias layer, rather than closing back through the soft ferromagnetic layer which would form new magnetic domains that are magnetized in both the first and second directions.
  • An inductor can be formed using the horizontally-laminated planar magnetic core.
  • the coil of the inductor can be configured to produce an inductor coil magnetic flux through the ferromagnetic layers in a direction parallel to the hard axes of magnetization.
  • Fig. 2 is a cross-sectional view of a horizontally-laminated planar magnetic core 20 according to an embodiment.
  • the planar magnetic core 20 can be fabricated on a substrate 250 and/or integrated into a multilevel wiring structure on substrate 250 to form an inductor.
  • the magnetic core 20 includes a plurality of ferromagnetic layers 200 and insulator layers 210.
  • Each ferromagnetic layer 200 is either a soft ferromagnetic layer 202 or a hard ferromagnetic bias layer 204.
  • the ferromagnetic layers 200 include a plurality of soft ferromagnetic layers 202 and a plurality of hard ferromagnetic bias layers 204, which are arranged in an alternating sequence of (a) a soft ferromagnetic layer 202 and (b) a hard ferromagnetic bias layer 204.
  • the ferromagnetic layers 204 are stacked along the height of the core 20 (e.g., along the "z" axis).
  • Each hard ferromagnetic bias layer 204 is a neighboring ferromagnetic layer 200 of at least one soft ferromagnetic layer 202.
  • the top ferromagnetic layer 200A in the stack of ferromagnetic layers 200 is a top hard ferromagnetic bias layer 204.
  • the neighboring ferromagnetic layer of layer 200A is ferromagnetic layer 200B, which is a soft ferromagnetic layer 202.
  • the neighboring ferromagnetic layers of the hard ferromagnetic bias layer 200C are soft ferromagnetic layers 200B and 200D.
  • Each ferromagnetic layer 200 is anisotropic such that its easy axis of magnetization 220 is parallel to the "x" axis and its hard axis of magnetization 222 is parallel to the "y" axis.
  • the hard axis of magnetization 222 is orthogonal to the easy axis of magnetization 220 within the major plane of the ferromagnetic layer 200.
  • the major plane of the ferromagnetic layer 200 corresponds to the x-y plane (e.g., the length (x) and width (y) of the ferromagnetic layer 200 while the thickness (z) of the ferromagnetic layer is orthogonal to the x-y plane).
  • the anisotropy of the ferromagnetic layers 200 is induced during manufacturing to permanently or semi-permanently set the hard and easy axes of magnetization.
  • the easy axis of magnetization 220 can be set by applying a bias magnetic field during or after deposition of each ferromagnetic layer 200 that is parallel to the desired easy axis of magnetization 220, and then annealing the respective ferromagnetic layer 200.
  • Each ferromagnetic layer 200 can include cobalt, iron, and/or nickel, or a compound or alloy comprising cobalt, iron, and/or nickel.
  • the soft ferromagnetic layers 202 comprise or Co x Zr y Ta1 -x-y (CZT) with x and y being approximately 0.915 and 0.04, respectively.
  • the soft ferromagnetic layers 202 can comprise CoZrTa-B (or CoZrTaB), CoNiFe, NiFe, CoFe, and/or CoFeB, or alloys that include any of the foregoing compounds.
  • the hard ferromagnetic bias layers 204 can comprise AlNiCo, NdFeB, SmCo, ferrite alloys of Fe x O y that include one or more metals such as Co, Sr, and/or Ba, or alloys that include any of the foregoing compounds.
  • the insulator layer 210 can comprise (a) aluminum, cobalt, chromium, silicon, tantalum, titanium, and/or zirconium, or (b) a compound of (1) aluminum, cobalt, chromium, silicon, tantalum, titanium, and/or zirconium and (2) oxygen and/or nitrogen.
  • the insulator layer 210 can comprise silicon dioxide (SiCb), aluminum oxide (Al x O y ), chromium oxide (Cr x O y ), cobalt oxide (Co x O y ), tantalum oxide (Ta x O y ), titanium oxide (Ti x O y ), silicon nitride (Si x N y ), aluminum nitride (Al x N y ), tantalum nitride (Ta x N y ), or a combination of two or more of the foregoing.
  • the insulator layer 210 can function as a spacer layer between neighboring ferromagnetic layers 200.
  • each spacer layer is related to the energy state for forming a closed magnetic field loop in neighboring soft and hard ferromagnetic layers 202, 204.
  • the thickness of the spacer layers can be adjusted to promote closed magnetic field loops in pairs of soft and hard ferromagnetic layers 202, 204, for example as discussed below with respect to Fig. 4.
  • the insulator layer 210 can function as a capping layer 212.
  • the insulator layer 210 can function as an adhesion layer 214.
  • the magnetic core 20 can be turned or rotated such that the terms "top” and "bottom” do not apply, but the layers would maintain the same relative positions with respect to each other.
  • the hard ferromagnetic bias layers 204 are magnetized to produce a respective bias magnetic field.
  • the in-plane bias magnetic field flux 230, from the bias magnetic field, through the hard ferromagnetic bias layers 204 is in a first direction (e.g., from right to left as indicated by the arrows in Fig. 2) parallel to the easy axis of magnetization 220.
  • the bias magnetic flux 230 through each hard ferromagnetic bias layer 204 forms a closed bias magnetic field loop by passing through the neighboring soft ferromagnetic layer(s) 202, as indicated by the curved arrows 235.
  • the bias magnetic flux 230 through each soft ferromagnetic layer 202 is in a second direction (e.g., from left to right) that is opposite (e.g., antiparallel) to the first direction.
  • the second direction is parallel to the easy axis of magnetization 220.
  • bias magnetic flux 230 It is lower energy for the bias magnetic flux 230 to form a closed loop by passing through the neighboring hard ferromagnetic bias layer(s) 204 (as indicated by the curved arrows 235) than to form a closed loop by passing back through the same soft ferromagnetic layer 202 (e.g., to form domain walls within the respective soft ferromagnetic layer 202).
  • the hard ferromagnetic layers 204 have a higher permeability than the soft ferromagnetic layers 202.
  • the bias magnetic flux 230 through the soft ferromagnetic layers 202 produces magnetic moments and an induced magnetic flux 240 through the soft ferromagnetic layers 202 in the second direction. As with the bias magnetic flux 230, it is lower energy for the induced magnetic flux 240 to form a closed loop by passing through the neighboring hard ferromagnetic bias layer(s) 204 (as indicated by the curved arrows 235) than to form a closed loop by passing back through the same soft ferromagnetic layer 202 (e.g., to form domain walls within the respective soft ferromagnetic layer 202).
  • Domain wall reduction in the soft ferromagnetic layers 202 can improve the efficiency of the core 20 (e.g., by lowering the coercivity of the stacked core 20 compared to when the core 20 does not include hard ferromagnetic bias layers 204), such as when the core 20 is integrated into an inductor that operates at a high frequency (e.g., at least 1 MHz).
  • the core 20 can have lower hysteresis and eddy current power losses compared to when the core 20 does not include hard ferromagnetic bias layers 204.
  • Each hard ferromagnetic bias layer 204 can have a coercivity greater than 50 Oe, such as a range of about 50 Oe to about 1 ,000 Oe, including about 250 Oe, about 500 Oe, about 750 Oe, and any range or value between any two of the foregoing coercivities.
  • Each soft ferromagnetic layer 204 can have a coercivity less than 1 Oe, such as a range of about 0.01 Oe to 1 Oe, including about 0.1 Oe, about 0.25 Oe, about 0.5 Oe, about 0.75 Oe, and any range or value between any two of the foregoing coercivities.
  • each ferromagnetic layer 200 can be about 10 nm to about 1 ,000 nm.
  • the thickness of each insulating layer 210 can be about 1 nm to about 50 nm.
  • the total thickness of the core 20 can be less than or equal to about 100,000 nm (i.e., 100 microns).
  • the thickness of the ferromagnetic layers 200, insulating layers 210, and core 20 is measured with respect to the "z" axis which is orthogonal to the principal plane of the core 20.
  • the inductor coil is preferably configured and oriented so that the inductor coil magnetic flux passes through the ferromagnetic layers 200 in a direction parallel to the hard axis of magnetization 222.
  • Fig. 3 is an exploded perspective view of the planar magnetic core 20 illustrated in Fig. 2.
  • the capping layer 212 is not illustrated in Fig. 3 for clarity.
  • Fig. 3 further illustrates the magnetic flux lines 230, 240 as they pass in a first direction (i.e., from in Fig. 3) through the hard ferromagnetic bias layers 204, in a second direction (i.e., from left-to-right right-to-left in Fig. 3) through the soft ferromagnetic layers 202, and as they extend between the soft and hard ferromagnetic layers 202, 204. Accordingly, the magnetic flux has a closed path through the soft and hard ferromagnetic layers 202, 204.
  • Fig. 4 is a cross-sectional view of a planar magnetic core 40 according to another embodiment. Core 40 is the same as core 20 except as described below.
  • the soft and hard ferromagnetic layers 202, 204 are labeled as 202A, 202B, . . .
  • the thicknesses of the soft and hard ferromagnetic layers 202, 204 in core 40 are related (e.g., co-optimized) such that the magnetic flux through a pair of neighboring soft and hard ferromagnetic layers 202, 204 is equal.
  • ( ⁇ HL is the magnetic flux through the hard ferromagnetic bias layer 204
  • ⁇ SL is the magnetic flux through the soft ferromagnetic layer 202.
  • Equation (1) can be rewritten as: where ⁇ 0 is the permeability of free space, M S_soft is the saturation magnetization of the soft ferromagnetic layer 202, M S_hard is the saturation magnetization of the hard ferromagnetic bias layer 204, ⁇ Soft is the thickness of the soft ferromagnetic layer 202, and ⁇ hard is the thickness of the hard ferromagnetic bias layer 204.
  • the ratio of the thickness of the hard ferromagnetic bias layer 204 to the thickness of the soft ferromagnetic layer 202 is which co-optimizes the soft and hard ferromagnetic layer thicknesses for layer-to-layer magnetic flux closure.
  • this thickness ratio is illustrated with each soft ferromagnetic layer 202 having a unit thickness (UT) and each hard ferromagnetic bias layer 204 having a thickness of
  • the thickness of the insulator layers 210 can be adjusted to promote closed magnetic field loops in pairs of soft and hard ferromagnetic layers 202, 204.
  • the core 40 has N soft-hard ferromagnetic pairs 440, with each soft-hard ferromagnetic pair 440 comprising one soft ferromagnetic layer 202 and one hard ferromagnetic bias layer 204.
  • the N soft-hard ferromagnetic pairs 440 are repeating units in the core 40 where the relative positions of the soft and hard ferromagnetic layers 202, 204 are the same across each soft-hard ferromagnetic pair 440.
  • the soft ferromagnetic layer 202 is disposed above the hard ferromagnetic bias layer 204 in a soft-hard ferromagnetic pair 440, the soft ferromagnetic layer 202 is disposed above the hard ferromagnetic bias layer 204 in all N soft-hard ferromagnetic pairs 440.
  • the soft ferromagnetic layer 202 is disposed below the hard ferromagnetic bias layer 204 in a soft-hard ferromagnetic pair 440, the soft ferromagnetic layer 202 is disposed below the hard ferromagnetic bias layer 204 in all N soft-hard ferromagnetic pairs 440.
  • the thickness of a first insulator 210 that is disposed between the soft ferromagnetic layer 202 and a first neighboring hard ferromagnetic bias layer 204 can be greater than the thickness of a second insulator 210 that is disposed between the soft ferromagnetic layer 202 and a second neighboring hard ferromagnetic bias layer 204 (e.g., a hard ferromagnetic bias layer 204 in the soft- hard ferromagnetic pair 440 as the soft ferromagnetic layer 202).
  • the thickness of insulator layer 21 OB is greater than the thickness of insulator layer 210A.
  • the thicker insulator layer e.g., insulator layer 21 OB
  • the thinner insulator layer e.g., insulator layer 210A
  • an intra-pair spacer layer 410 the thickness of insulator layer 21 OB is greater than the thickness of insulator layer 210A.
  • the inter-pair spacer layer 400 can be about 2 to about 10 times the thickness of the intra-pair spacer layer 410.
  • the thickness of the intra-pair spacer layer 410 can be about 1 nm to about 50 nm, including about 10 nm, about 20 nm, about 30 nm, about 40 nm, and any value or range between any two of the foregoing thicknesses.
  • the thickness of the inter-pair spacer layer 400 is greater than the thickness of the intra-pair spacer layer 410.
  • the thickness of each layer e.g., ferromagnetic layers 200 and insulator layers 210) is measured with respect to the "z" axis which is orthogonal to the top and bottom planar surfaces of substrate 250 and to the major plane of core 40.
  • all or substantially all of the magnetic flux (e.g., bias and induced magnetic flux 230, 240) through hard ferromagnetic bias layer 204A forms a closed loop through soft ferromagnetic layer 202A, as indicated by curved arrows 437.
  • an inter-pair spacer layer 400 is disposed on (e.g., in direct physical contact with) a first side 420 of each soft ferromagnetic layer 202 and an intra-pair spacer layer 410 is disposed on (e.g., in direct physical contact with) a second side 425 of the respective soft ferromagnetic layer 202.
  • the first and second sides 420, 425 are on opposing sides of the soft ferromagnetic layer 202.
  • the first side 420 is on the bottom of each soft ferromagnetic layer 202, where the bottom is closer to the substrate 250 than the top.
  • Soft ferromagnetic layer 202N located on the bottom of core 40, only has one neighboring hard ferromagnetic bias layer, 204N, and thus does not need a thicker inter-pair spacer layer 400 below the bottom surface of soft ferromagnetic layer 202N to set the magnetization. Instead, a thinner adhesion layer 214 is formed below soft ferromagnetic layer 202N.
  • the thickness of the adhesion layer 214 and capping layer 212 can be the same as the thickness of the intra-pair spacer layer 410.
  • the inter-pair spacer layer 400 is disposed above (e.g., in direct physical contact with) the second side 425 of each soft ferromagnetic layer 202 and the intra-pair spacer layer 410 is disposed below (e.g., in direct physical contact with) the first side 425 of the respective soft ferromagnetic layer 202 the top surface of each soft ferromagnetic layer 202.
  • An advantage to pairing the soft and hard ferromagnetic layers 202, 204 is to direct all or substantially all of the bias magnetic flux 230 through one hard ferromagnetic bias layer 204 to pass through a corresponding soft ferromagnetic layer 202 in a soft-hard ferromagnetic pair 440, which maximizes the reduction in domain wall formation in each soft ferromagnetic layer 202.
  • the inductor coil is preferably configured and oriented so that the inductor coil magnetic flux passes through the soft and hard ferromagnetic layers 202, 204 in a direction parallel to the hard axis of magnetization 222.
  • Fig. 5 is a cross-sectional view of a planar magnetic core 50 according to another embodiment.
  • the planar magnetic core 50 can be fabricated on a substrate 550 and/or integrated into a multilevel wiring structure on substrate 550 to form an inductor.
  • the core 50 includes a plurality of ferromagnetic layers 500A-G (in general, ferromagnetic layers 500) and insulator layers 510.
  • the core 50 also includes a capping layer 212 and an adhesion layer 214.
  • Each ferromagnetic layer 500 is either a soft ferromagnetic layer 502 or a hard ferromagnetic bias layer 504.
  • Each ferromagnetic layer 500 is anisotropic such that its easy axis of magnetization 520 is parallel to the "x" axis and its hard axis of magnetization 522 is parallel to the "y" axis.
  • the hard axis of magnetization is orthogonal to the easy axis of magnetization 520 within the major plane of the ferromagnetic layer 500.
  • the soft and hard ferromagnetic layers 502, 504 can be the same as the soft and hard ferromagnetic layers 202, 204, respectively.
  • the insulator layers 510 can be the same as insulator layers 210 and/or intra-pair spacer layer 410.
  • the top and bottom (or first and last, respectively) ferromagnetic layers 500 are hard ferromagnetic bias layers 504 (e.g., top and bottom hard ferromagnetic bias layers).
  • the hard ferromagnetic bias layers 504 are configured to produce a bias magnetic field 540 in a first direction (e.g., from right to left) that is parallel to the easy axis of magnetization 520.
  • All ferromagnetic layers 500 between the top and bottom hard ferromagnetic bias layers 504 are soft ferromagnetic layers 502.
  • Core 50 is configured so that half of the magnetic flux through each soft ferromagnetic layer 502 forms a closed path through each neighboring ferromagnetic layer 500.
  • the bias magnetic flux 530 passes through the hard ferromagnetic bias layer 500A in a first direction (e.g., from right to left) that is parallel to the easy axis of magnetization 520.
  • the bias magnetic flux 530 has a return path through the soft ferromagnetic layer 500B, in a second direction (e.g., from left to right) that is parallel to the easy axis of magnetization 520, to form a closed loop.
  • the bias magnetic flux 530 through the soft ferromagnetic layer 500B produces magnetic moments and an induced magnetic flux 540 through the soft ferromagnetic layer 500B in the second direction.
  • the magnitude of the induced magnetic flux 540 is equal to or approximately equal to the magnitude of the bias magnetic flux 530.
  • the induced magnetic flux 540 through the soft ferromagnetic layer 500B (e.g., in the second direction) forms a closed loop through the soft ferromagnetic layer 500C (e.g., in the first direction) where the induced magnetic flux 540 functions as a bias magnetic flux 530'.
  • half of the magnetic flux (e.g., the bias magnetic flux 530) through the soft ferromagnetic layer 500B forms a closed loop through the hard ferromagnetic bias layer 500A and the other half of the magnetic flux (e.g., the induced magnetic flux 540) through the soft ferromagnetic layer 500B forms a closed loop through the soft ferromagnetic layer 500C (e.g., as bias magnetic flux 530').
  • the bias magnetic flux 530' through the soft ferromagnetic layer 500C produces additional magnetic moments and induced magnetic flux 540 through the soft ferromagnetic layer 500C.
  • the magnitude of the induced magnetic flux 540 is approximately equal to the magnitude of the bias magnetic flux 530'.
  • the induced magnetic flux 540 through the soft ferromagnetic layer 500C (e.g., in the first direction) forms a closed loop through the soft ferromagnetic layer 500D (e.g., in the second direction) where the induced magnetic flux 540 functions as a bias magnetic flux 530'.
  • half of the magnetic flux (e.g., the bias magnetic flux 530') through the soft ferromagnetic layer 500C forms a closed loop through the soft ferromagnetic layer 500B (e.g., as induced magnetic flux 540) and the other half of the magnetic flux (e.g., the induced magnetic flux 540) through the soft ferromagnetic layer 500C forms a closed loop through the soft ferromagnetic layer 500D (e.g., as bias magnetic flux 530').
  • the bias magnetic flux 530 passes through the hard ferromagnetic bias layer 500G in a first direction (e.g., from right to left) that is parallel to the easy axis of magnetization 520.
  • the bias magnetic flux 530 has a return path through the soft ferromagnetic layer 500F, in a second direction (e.g., from left to right) that is parallel to the easy axis of magnetization 520, to form a closed loop.
  • the bias magnetic flux 530 through the soft ferromagnetic layer 500F produces magnetic moments and an induced magnetic flux 540 through the soft ferromagnetic layer 500F in the second direction.
  • the magnitude of the induced magnetic flux 540 through soft ferromagnetic layer 500F is equal to or approximately equal to the magnitude of the bias magnetic flux 530 through soft ferromagnetic layer 500F.
  • the induced magnetic flux 540 through the soft ferromagnetic layer 500F forms a closed loop through the soft ferromagnetic layer 500E (e.g., in the first direction) where the induced magnetic flux 540 functions as a bias magnetic flux 530'. It is a lower energy state for the induced magnetic flux 540 through soft ferromagnetic layer 500F to form a closed loop through soft ferromagnetic layer 500E (e.g., as bias magnetic flux 530') than to form a closed loop by passing back through soft ferromagnetic layer 500F (e.g., to form domain walls).
  • half of the magnetic flux (e.g., the bias magnetic flux 530) through the soft ferromagnetic layer 500F forms a closed loop through the hard ferromagnetic bias layer 500G and the other half of the magnetic flux (e.g., the induced magnetic flux 540) through the soft ferromagnetic layer 500F forms a closed loop through the soft ferromagnetic layer 500E (e.g., as bias magnetic flux 530').
  • the thicknesses of the soft and hard ferromagnetic layers 502, 504 are cooptimized for layer-to-layer magnetic flux closure. As can be seen, the magnitude of the magnetic flux through the hard ferromagnetic bias layers 504 is equal to or approximately equal to half of the magnitude of the magnetic flux through the soft ferromagnetic layers 502.
  • the flux balancing equation (1) can be rewritten as: [0074]
  • the ratio of the thickness of the hard ferromagnetic bias layer 504 to the thickness of the soft ferromagnetic layer 502 is which co-optimizes the soft and hard ferromagnetic layer thicknesses for layer-to-layer magnetic flux closure.
  • this thickness ratio is illustrated with each soft ferromagnetic layer 502 having a unit thickness (UT) and each hard ferromagnetic bias layer 504 having a thickness of .
  • each layer e.g., ferromagnetic layers 500 and insulator layers 510
  • the thickness of each layer is measured with respect to the "z" axis which is orthogonal to the top and bottom planar surfaces of substrate 550 and to the major plane of core 50.
  • the "demagnetizing" field is very strong in whatever the shortest direction of the structure is.
  • the thickness ("z" dimension) is typically >100X smaller than the "y” and "x" dimensions of the ferromagnetic layers 500 so this field is very strong and prevents the "z" axis from being set as the easy axis in most cases.
  • the inductor coil is preferably configured and oriented so that the inductor coil magnetic flux passes through the ferromagnetic layers 500 in a direction parallel to the hard axis of magnetization 522.
  • the core 50 includes N ferromagnetic layers 500 where N is an odd integer that is greater than or equal to 3.
  • the core 50 includes top and bottom hard ferromagnetic bias layers 504 and an odd integer of soft ferromagnetic layers 502 between the top and bottom hard ferromagnetic bias layers 504.
  • An odd integer of soft ferromagnetic layers 502 prevents accumulation of induced magnetic flux 540 in the core 50.
  • Fig. 6 is an exploded perspective view of the planar magnetic core 50 illustrated in Fig. 5.
  • the capping layer 212 is not illustrated in Fig. 6 for clarity.
  • Fig. 6 further illustrates the magnetic flux lines 530, 530', 540 in the ferromagnetic layers 500.
  • the magnetic flux lines 530, 530', 540 through the soft and hard ferromagnetic layers 502, 504 are parallel or substantially parallel to (i.e. , within 10 degrees of) the easy axis of magnetization 520.
  • the magnetic flux lines 530 and/or 540 through the soft and hard ferromagnetic layers 502, 504 are orthogonal to or substantially orthogonal to (i.e., within 10 degrees of) the hard axis of magnetization 522.
  • Fig. 7 is a flow chart 70 of a method of manufacturing a semiconductor device according to an embodiment.
  • step 700 an alternating sequence of ferromagnetic layers and insulating layers is deposited.
  • the ferromagnetic layers include a plurality of hard ferromagnetic layers and a plurality of soft ferromagnetic layers, and each ferromagnetic layer comprises a soft ferromagnetic layer or a hard ferromagnetic layer.
  • each hard ferromagnetic layer is a neighboring ferromagnetic layer of at least one (i.e., 1 or 2) neighboring soft ferromagnetic layers.
  • each hard ferromagnetic layer can be the top or bottom ferromagnetic layer in horizontally-laminated magnetic core.
  • each hard ferromagnetic layer is a neighboring ferromagnetic layer of only one soft ferromagnetic layer (e.g., the hard ferromagnetic layer on top of the core has a neighboring soft ferromagnetic layer below the top hard ferromagnetic layer, and the hard ferromagnetic layer on the bottom of the core has a neighboring soft ferromagnetic layer above the bottom hard ferromagnetic bias layer).
  • the hard ferromagnetic layer is disposed between the top and bottom ferromagnetic layers, in which case the hard ferromagnetic layer has two neighboring soft ferromagnetic layers (one above and one below the hard ferromagnetic bias layer).
  • the ferromagnetic layers can be deposited in soft-hard ferromagnetic layer pairs.
  • an easy axis of magnetization is induced in each ferromagnetic layer.
  • the easy axis of magnetization is parallel to a top planar surface of the semiconductor substrate over or on which the semiconductor device is formed and is within the major plane of the respective ferromagnetic layer.
  • the easy axis is also within the major plane of the respective ferromagnetic layer.
  • the easy axis of magnetization can be induced during or after ferromagnetic layer deposition (step 700). For example, during ferromagnetic layer deposition (e.g., electrodeposition and/or sputter deposition) a bias magnetic field can be applied.
  • the bias magnetic field is configured to pass through the ferromagnetic layer, as it is deposited, in a direction parallel to the top planar surface of the semiconductor substrate to form the easy axis of magnetization. Additionally or alternatively, the bias magnetic field can be applied during a post-deposition anneal.
  • each hard ferromagnetic layer is magnetized to form a respective hard ferromagnetic bias layer.
  • Each hard ferromagnetic bias layer creates an in-plane bias magnetic flux through the respective hard ferromagnetic bias layer in a first direction that is parallel to the easy axis of magnetization (e.g., induced in step 710) in each ferromagnetic layer.
  • the bias magnetic flux has a magnetization state oriented in a first direction.
  • the bias magnetic flux forms a closed path by passing through the neighboring soft ferromagnetic layer in a second direction that is opposite to the first direction.
  • Each hard ferromagnetic layer can be magnetized during deposition of the hard ferromagnetic layer, during a post-deposition anneal (e.g., in the presence of an in-plane magnetic field of sufficient strength), and/or during the inducement of the easy axis of magnetization in the hard ferromagnetic layer (e.g., in step 710). In some embodiments, steps 710 and 720 occur simultaneously.
  • a horizontally-laminated planar magnetic core that includes the ferromagnetic layers and the insulating layers is defined, such as through photolithography and etching.
  • the method can include forming a conductive winding around the horizontally-laminated planar magnetic core, such as to form an inductor.
  • the conductive winding can be configured to form an inductor coil magnetic field that passes through the at least one neighboring soft ferromagnetic layer in a direction parallel to the hard axis of magnetization of the at least one neighboring soft ferromagnetic layer, for example to avoid domain wall motion and associated energy losses.
  • the top ferromagnetic layer in the plurality of ferromagnetic layers is a hard ferromagnetic bias layer (e.g., a top hard ferromagnetic bias layer).
  • the bottom ferromagnetic layer in the plurality of ferromagnetic layers is a hard ferromagnetic bias layer (e.g., a bottom hard ferromagnetic bias layer).
  • the other ferromagnetic layers can be only soft ferromagnetic layers (e.g., an odd integer of soft ferromagnetic layers).
  • the ratio of the hard ferromagnetic thickness of each hard ferromagnetic bias layer to the soft ferromagnetic thickness of each soft ferromagnetic layer can be is the saturation magnetization of each soft ferromagnetic layer and M S_hard is the saturation magnetization of each hard ferromagnetic bias layer, as discussed above.
  • the ferromagnetic layers are deposited as soft- hard ferromagnetic layer pairs where each soft-hard ferromagnetic layer pair includes one soft ferromagnetic layer and one hard ferromagnetic bias layer.
  • An intra-pair spacer layer is deposited between the soft ferromagnetic layer and the hard ferromagnetic bias layer in each soft-hard ferromagnetic layer pair, and an inter-pair spacer layer is deposited between neighboring soft-hard ferromagnetic layer pairs.
  • the inter-layer spacers and the intra-layer spacers are insulating layers, where the inter-pair spacer layer thickness of each inter-pair spacer layer is greater than the intra-layer spacer thickness of each intra-layer spacer.
  • a ratio of a hard ferromagnetic thickness of each hard ferromagnetic bias layer to a soft ferromagnetic thickness of each soft ferromagnetic layer is where M S_ sof t is the saturation magnetization of each soft ferromagnetic layer and M S_hard is the saturation magnetization of each hard ferromagnetic bias layer.
  • Fig. 8 is a representative cross section 80 of a magnetic core inductor 800 integrated into a semiconductor device on a substrate 810 according to an embodiment.
  • the inductor 800 includes a horizontally-laminated magnetic core 820 and a conductive winding 830.
  • the conductive winding 830 is integrated into a multilevel wiring network 835 that provides electrical connections between PMOS and NMOS transistor gates 862, 864, the inductor 800, and integrated circuit (IC) chip contact structures 832.
  • the PMOS and NMOS transistor gates 862, 864 are fabricated on a semiconductor substrate 810 (e.g., silicon, silicon-on-insulator, or another semiconductor substrate).
  • the IC chip contact structures 832 can comprise C4 contacts, solder bumps, or copper pillars, but any other contacts for the semiconductor device's external communication are acceptable without limitation.
  • the multilevel wiring network 835 is arranged into wiring planes 820.
  • Each wiring plane 820 contains wire segments 850. Electrical connections between wiring segments 850 of differing wiring planes 837 are provided by conductive VIAs 840.
  • the spaces in the multilevel wiring network 835 are filled with a dielectric insulating material 860 such as SiCV.
  • the inductor 800 is integrated on top of the multilevel wiring network 835.
  • the conductive winding 830 is piecewise constructed of wire segments 850' and of VIAs 840' that are disposed in at least two integration planes 839 on top of the multilevel wiring network 835.
  • the VIAs 840' that form parts of the winding 830 are vertical or orthogonal to the principal plane 875 and electrically interconnect the wire segments 850' in the two integration planes 839.
  • the inductor 800 can be integrated into the multilevel wiring network 835 instead of in the integration planes 830 on top of the multilevel wiring network 835.
  • the magnetic core 820 can comprise any of the magnetic cores described herein.
  • magnetic core 820 can be the same as or can comprise core 20, core 40, or core 50.
  • the conductive winding 830 is configured and/or arranged to generate an inductor coil magnetic field that produces an inductor coil magnetic flux through the soft ferromagnetic layers in the core 820.
  • the inductor coil magnetic flux is parallel to the hard axis of magnetization in the respective soft ferromagnetic layer.
  • the inductor coil magnetic flux through the soft ferromagnetic layers and the easy axis of magnetization in the soft ferromagnetic layers are parallel and/or substantially parallel to the principal plane 875 of the planar magnetic core 820, which is also parallel and/or substantially parallel to the wiring planes 837 and the top surface 812 of the semiconductor substrate 810.
  • the inductor 800 can be a component of a power converter, such as a switched inductor DC-DC power converter.
  • the power converter can include multiple inductors, with each inductor being the same as or similar to inductor 800.
  • the inductors can be arranged in parallel electrically with one another, in series electrically with one another, or a combination thereof.
  • the plurality of inductors can be integrated on the same integration or wiring planes or in different integration or wiring planes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thin Magnetic Films (AREA)
  • Soft Magnetic Materials (AREA)
  • Hard Magnetic Materials (AREA)
  • Magnetic Heads (AREA)
PCT/US2021/072400 2020-12-01 2021-11-15 Magnetic core with hard ferromagnetic biasing layers and structures containing same Ceased WO2022120319A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023531532A JP7792188B2 (ja) 2020-12-01 2021-11-15 硬質強磁性バイアス層を有する磁気コア、および当該磁気コアを含む構造
KR1020237019208A KR102857258B1 (ko) 2020-12-01 2021-11-15 경질 강자성 바이어스층을 갖는 자기 코어 및 이를 포함하는 구조
DE112021005049.4T DE112021005049T5 (de) 2020-12-01 2021-11-15 Magnetkern mit hartferromagnetischen Vormagnetisierungsschichten und Strukturen, welchen diesen enthalten

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/108,096 2020-12-01
US17/108,096 US12322695B2 (en) 2020-12-01 2020-12-01 Magnetic core with hard ferromagnetic biasing layers and structures containing same

Publications (2)

Publication Number Publication Date
WO2022120319A2 true WO2022120319A2 (en) 2022-06-09
WO2022120319A3 WO2022120319A3 (en) 2022-07-21

Family

ID=78844874

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2021/072400 Ceased WO2022120319A2 (en) 2020-12-01 2021-11-15 Magnetic core with hard ferromagnetic biasing layers and structures containing same

Country Status (6)

Country Link
US (2) US12322695B2 (https=)
JP (1) JP7792188B2 (https=)
KR (1) KR102857258B1 (https=)
DE (1) DE112021005049T5 (https=)
TW (1) TWI817268B (https=)
WO (1) WO2022120319A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10720487B2 (en) * 2018-06-28 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with magnetic element
US12125713B2 (en) 2022-03-22 2024-10-22 Ferric Inc. Method for manufacturing ferromagnetic-dielectric composite material
US20230411442A1 (en) * 2022-06-20 2023-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Package with permalloy core inductor and manufacturing method thereof

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1553983A (en) 1919-12-26 1925-09-15 Western Electric Co Electrical coil
US2931966A (en) 1955-01-14 1960-04-05 Charles F Rockey Alternating current rectifier
US3110613A (en) 1960-09-19 1963-11-12 Charles P Bean Magnetic material
US3543249A (en) 1967-12-19 1970-11-24 Bell Telephone Labor Inc High permeability magnetic film structure
US3614554A (en) 1968-10-24 1971-10-19 Texas Instruments Inc Miniaturized thin film inductors for use in integrated circuits
US3573760A (en) 1968-12-16 1971-04-06 Ibm High density thin film memory and method of operation
US4025379A (en) 1973-05-03 1977-05-24 Whetstone Clayton N Method of making laminated magnetic material
US4103315A (en) 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
US4236946A (en) 1978-03-13 1980-12-02 International Business Machines Corporation Amorphous magnetic thin films with highly stable easy axis
JPS5821810A (ja) 1981-07-31 1983-02-08 Matsushita Electric Works Ltd 安定器の鉄芯打抜き方法
JPS60124859A (ja) 1983-12-09 1985-07-03 Nec Corp 多層配線構造
JPS6428957A (en) 1987-07-24 1989-01-31 Hitachi Ltd Magnetic semiconductor material
US5070317A (en) 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
DE3931628C2 (de) 1989-09-22 1994-01-20 Steingroever Magnet Physik Elektromagnet mit einstellbarem Luftspalt
DE4117878C2 (de) 1990-05-31 1996-09-26 Toshiba Kawasaki Kk Planares magnetisches Element
US5319343A (en) 1990-08-21 1994-06-07 Powercube Corporation Integrated magnetic inductor having series and common mode windings
JPH0582736A (ja) 1991-07-15 1993-04-02 Matsushita Electric Ind Co Ltd インダクタ
US5225971A (en) 1992-01-08 1993-07-06 International Business Machines Corporation Three coil bridge transformer
JPH05291063A (ja) 1992-04-09 1993-11-05 Fuji Electric Co Ltd 磁気誘導素子
US5399372A (en) 1993-11-08 1995-03-21 Southwall Technologies, Inc. Method of patterning magnetic members
EP0742906B1 (de) 1994-01-31 1998-09-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verwendung einer miniaturisierten spulenanordnung hergestellt in planartechnologie zur detektion von ferromagnetischen stoffen
US5635892A (en) 1994-12-06 1997-06-03 Lucent Technologies Inc. High Q integrated inductor
JPH09162354A (ja) 1995-07-07 1997-06-20 Northern Telecom Ltd 集積インダクタ構造およびその製造方法
US5912553A (en) 1997-01-17 1999-06-15 Schott Corporation Alternating current ferroresonant transformer with low harmonic distortion
JPH10284314A (ja) 1997-04-10 1998-10-23 Masato Sagawa 磁心材料
US6118351A (en) 1997-06-10 2000-09-12 Lucent Technologies Inc. Micromagnetic device for power processing applications and method of manufacture therefor
US7107666B2 (en) 1998-07-23 2006-09-19 Bh Electronics Method of manufacturing an ultra-miniature magnetic device
KR20000014333A (ko) 1998-08-20 2000-03-06 윤종용 전자렌지의 노이즈방지기능을 갖는 고압트랜스
US6542379B1 (en) 1999-07-15 2003-04-01 International Business Machines Corporation Circuitry with integrated passive components and method for producing
US6870456B2 (en) 1999-11-23 2005-03-22 Intel Corporation Integrated transformer
US20030070282A1 (en) 2000-04-27 2003-04-17 Bh Electronics, Inc. Ultra-miniature magnetic device
US20040009614A1 (en) 2000-05-12 2004-01-15 Ahn Chong H Magnetic bead-based arrays
US7026905B2 (en) 2000-05-24 2006-04-11 Magtech As Magnetically controlled inductive device
FR2813987B1 (fr) 2000-09-12 2003-01-10 Memscap Microcomposant du type micro-inductance ou micro-transformateur
TW535175B (en) 2000-10-16 2003-06-01 Primarion Inc System and method for orthogonal inductance variation
JP2002208127A (ja) 2000-11-09 2002-07-26 Fuji Electric Co Ltd 磁気記録媒体およびその製造方法
FR2817622B1 (fr) 2000-12-01 2003-01-10 Memscap Micromagnetometre a porte de flux
JP2002190411A (ja) 2000-12-21 2002-07-05 Mitsui High Tec Inc チップインダクタ
US6362986B1 (en) 2001-03-22 2002-03-26 Volterra, Inc. Voltage converter with coupled inductive windings, and associated methods
US20030090244A1 (en) 2001-11-05 2003-05-15 Krishna Shenai Multislice DC-DC converter
US6646532B2 (en) 2002-02-26 2003-11-11 Nec Tokin Corporation Powder core and reactor using the same
US6940384B2 (en) 2002-03-11 2005-09-06 Netpower Technologies, Inc. Packaging techniques for a high-density power converter
JP2004146543A (ja) * 2002-10-23 2004-05-20 Asahi Kasei Chemicals Corp 磁石用固形材料およびその製造方法
US7169472B2 (en) 2003-02-13 2007-01-30 Jds Uniphase Corporation Robust multilayer magnetic pigments and foils
US7109689B2 (en) 2003-04-04 2006-09-19 Intersil Americas Inc. Transient-phase PWM power supply and method
JP4059498B2 (ja) 2003-10-24 2008-03-12 ローム株式会社 半導体装置
US7098766B2 (en) 2004-01-21 2006-08-29 Intel Corporation Magnetic material for transformers and/or inductors
US7279391B2 (en) 2004-04-26 2007-10-09 Intel Corporation Integrated inductors and compliant interconnects for semiconductor packaging
US7294525B2 (en) 2005-05-25 2007-11-13 Intel Corporation High performance integrated inductor
JP2006228824A (ja) 2005-02-15 2006-08-31 Tokyo Coil Engineering Kk インダクタ及びその製造方法
US7176662B2 (en) 2005-02-23 2007-02-13 Coldwatt, Inc. Power converter employing a tapped inductor and integrated magnetics and method of operating the same
TWI330863B (en) 2005-05-18 2010-09-21 Megica Corp Semiconductor chip with coil element over passivation layer
US7262069B2 (en) 2005-06-07 2007-08-28 Freescale Semiconductor, Inc. 3-D inductor and transformer devices in MRAM embedded integrated circuits
JP2007049084A (ja) 2005-08-12 2007-02-22 Toshiba Corp スイッチ素子、メモリ素子および磁気抵抗効果素子
FR2894679B1 (fr) 2005-12-14 2008-03-21 Commissariat Energie Atomique Noyau magnetique miniature, capteur le comportant et procede pour le fabriquer
US7230408B1 (en) 2005-12-21 2007-06-12 Micrel, Incorporated Pulse frequency modulated voltage regulator with linear regulator control
US7875955B1 (en) 2006-03-09 2011-01-25 National Semiconductor Corporation On-chip power inductor
JP4773254B2 (ja) * 2006-03-15 2011-09-14 太陽誘電株式会社 高周波磁性薄膜及び高周波電子デバイス
US7791837B2 (en) 2006-03-31 2010-09-07 Tdk Corporation Thin film device having thin film coil wound on magnetic film
US7636242B2 (en) 2006-06-29 2009-12-22 Intel Corporation Integrated inductor
US7719084B2 (en) 2006-06-30 2010-05-18 Intel Corporation Laminated magnetic material for inductors in integrated circuits
US7518481B2 (en) 2006-06-30 2009-04-14 Intel Corporation Slotted magnetic material for integrated circuit inductors
US9048022B2 (en) 2006-08-28 2015-06-02 Youngtack Shim Electromagnetically-countered transformer systems and methods
FR2905792A1 (fr) 2006-09-11 2008-03-14 Commissariat Energie Atomique Circuit magnetique ferme pour applications dynamiques a haute frequence et procede de realisation d'un tel circuit magnetique.
MY149292A (en) 2007-01-17 2013-08-30 Univ Illinois Optical systems fabricated by printing-based assembly
US20080172861A1 (en) 2007-01-23 2008-07-24 Holmes Alan G Methods for manufacturing motor core parts with magnetic orientation
JP4872833B2 (ja) 2007-07-03 2012-02-08 富士電機株式会社 圧粉磁心およびその製造方法
US7943510B2 (en) 2007-09-10 2011-05-17 Enpirion, Inc. Methods of processing a substrate and forming a micromagnetic device
JP4854690B2 (ja) 2007-09-21 2012-01-18 ソニーケミカル＆インフォメーションデバイス株式会社 磁性シート及びその製造方法
US7554399B1 (en) 2007-09-27 2009-06-30 Cirrus Logic, Inc. Protection circuit and method for protecting switching power amplifier circuits during reset
US8270137B2 (en) 2007-10-15 2012-09-18 International Rectifier Corporation Interposer for an integrated DC-DC converter
US7986209B2 (en) 2007-11-20 2011-07-26 Intel Corporation Inductor using bulk metallic glass material
US7868431B2 (en) 2007-11-23 2011-01-11 Alpha And Omega Semiconductor Incorporated Compact power semiconductor package and method with stacked inductor and integrated circuit die
US7867787B2 (en) 2007-12-31 2011-01-11 Intel Corporation Forming inductor and transformer structures with magnetic materials using damascene processing for integrated circuits
TWI384739B (zh) 2008-01-03 2013-02-01 台達電子工業股份有限公司 組合式電路及電子元件
US7666688B2 (en) 2008-01-25 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a coil inductor
JP2010110432A (ja) 2008-11-05 2010-05-20 Olympus Corp 無線型被検体内情報取得装置
US20120154966A1 (en) 2009-08-31 2012-06-21 Ricor Cryogenic & Vacuum Systems Limited Partnership Fault current limiters (fcl) with the cores saturated by non-superconducting coils
US20110151588A1 (en) 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
SG175482A1 (en) * 2010-05-04 2011-11-28 Agency Science Tech & Res Multi-bit cell magnetic memory with perpendicular magnetization and spin torque switching
CN101840993B (zh) 2010-05-05 2012-02-15 北京科技大学 一种具有交换偏置效应的多层膜结构及其制作方法
US8130067B2 (en) 2010-05-11 2012-03-06 Texas Instruments Incorporated High frequency semiconductor transformer
JP5649857B2 (ja) 2010-06-21 2015-01-07 ルネサスエレクトロニクス株式会社 レギュレータ回路
JP5403279B2 (ja) 2010-08-04 2014-01-29 戸田工業株式会社 Ｒｆタグの製造方法、磁性体アンテナの製造方法及び当該ｒｆタグを実装した基板、通信システム
JP5690545B2 (ja) 2010-10-06 2015-03-25 ルネサスエレクトロニクス株式会社 電源装置
WO2012166877A1 (en) 2011-05-31 2012-12-06 The Trustees Of Columbia University In The City Of New York Systems and methods for coupled power inductors
WO2013003788A1 (en) 2011-06-30 2013-01-03 Analog Devices, Inc. Isolated power converter with magnetics on chip
US9251458B2 (en) 2011-09-11 2016-02-02 Féinics Amatech Teoranta Selective deposition of magnetic particles and using magnetic material as a carrier medium to deposit nanoparticles
US8840800B2 (en) 2011-08-31 2014-09-23 Kabushiki Kaisha Toshiba Magnetic material, method for producing magnetic material, and inductor element
US8558344B2 (en) 2011-09-06 2013-10-15 Analog Devices, Inc. Small size and fully integrated power converter with magnetics on chip
US9659706B2 (en) 2011-09-22 2017-05-23 The Trustees Of Dartmouth College Methods for making radially anisotropic thin-film magnetic torroidal cores
US8525281B2 (en) 2011-10-19 2013-09-03 Texas Instruments Incorporated Z-axis semiconductor fluxgate magnetometer
US20130099762A1 (en) 2011-10-20 2013-04-25 Qualcomm Atheros, Inc. Systems and methods for counteracting overvoltage events
US20140026654A1 (en) 2012-07-25 2014-01-30 Micro-G Lacoste, Inc. Interferometric Differential Gradiometer Apparatus and Method
US8742539B2 (en) 2012-07-27 2014-06-03 Infineon Technologies Austria Ag Semiconductor component and method for producing a semiconductor component
US9484136B2 (en) 2012-09-04 2016-11-01 Analog Devices Global Magnetic core for use in an integrated circuit, an integrated circuit including such a magnetic core, a transformer and an inductor fabricated as part of an integrated circuit
US11064610B2 (en) 2012-09-11 2021-07-13 Ferric Inc. Laminated magnetic core inductor with insulating and interface layers
US9844141B2 (en) 2012-09-11 2017-12-12 Ferric, Inc. Magnetic core inductor integrated with multilevel wiring network
KR101476044B1 (ko) 2012-12-06 2014-12-23 쓰리엠 이노베이티브 프로퍼티즈 캄파니 페라이트 그린 시트, 소결 페라이트 시트, 이를 포함하는 페라이트 복합시트 및 도전 루프 안테나 모듈
US9337251B2 (en) 2013-01-22 2016-05-10 Ferric, Inc. Integrated magnetic core inductors with interleaved windings
US9449945B2 (en) 2013-03-08 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Filter and capacitor using redistribution layer and micro bump layer
US9576721B2 (en) 2013-03-14 2017-02-21 Sumida Corporation Electronic component and method for manufacturing electronic component
WO2014181154A1 (en) 2013-05-09 2014-11-13 Nokia Siemens Networks Oy Measurements in a wireless system
JP2015061000A (ja) 2013-09-20 2015-03-30 株式会社東芝 電波吸収体
WO2015057209A1 (en) 2013-10-15 2015-04-23 Intel Corporation Magnetic shielded integrated circuit package
US9276477B2 (en) 2013-11-21 2016-03-01 Stmicroelectronics International N.V. DC-DC converter with enhanced automatic switching between CCM and DCM operating modes
US9647053B2 (en) 2013-12-16 2017-05-09 Ferric Inc. Systems and methods for integrated multi-layer magnetic films
US9047890B1 (en) 2013-12-30 2015-06-02 International Business Machines Corporation Inductor with non-uniform lamination thicknesses
US10251280B2 (en) 2013-12-31 2019-04-02 Texas Instruments Incorporated Integrated circuit with micro inductor and micro transformer with magnetic core
US9693461B2 (en) 2014-04-16 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Magnetic-core three-dimensional (3D) inductors and packaging integration
KR101662207B1 (ko) 2014-09-11 2016-10-06 주식회사 모다이노칩 파워 인덕터
JP2016063170A (ja) 2014-09-22 2016-04-25 株式会社東芝 磁性部材、磁性部材の製造方法およびインダクタ素子
KR101642610B1 (ko) 2014-12-30 2016-07-25 삼성전기주식회사 코일 부품 및 그 제조 방법
US11264156B2 (en) 2015-01-07 2022-03-01 Metglas, Inc. Magnetic core based on a nanocrystalline magnetic alloy
US9496213B2 (en) 2015-02-05 2016-11-15 Qualcomm Incorporated Integrated device package comprising a magnetic core inductor with protective ring embedded in a package substrate
JP6803523B2 (ja) 2015-03-31 2020-12-23 パナソニックＩｐマネジメント株式会社 薄膜磁石および薄膜磁石の製造方法
US10784045B2 (en) 2015-09-15 2020-09-22 International Business Machines Corporation Laminated magnetic materials for on-chip magnetic inductors/transformers
KR101900879B1 (ko) 2015-10-16 2018-09-21 주식회사 모다이노칩 파워 인덕터
KR101773093B1 (ko) 2015-11-27 2017-08-30 엘지이노텍 주식회사 무선 전력 충전기를 위한 자성 차폐 블록 제조 방법
US9728596B1 (en) 2016-02-05 2017-08-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and integrated inductor
US10354950B2 (en) 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
US10283249B2 (en) 2016-09-30 2019-05-07 International Business Machines Corporation Method for fabricating a magnetic material stack
CN106910602B (zh) 2017-01-24 2019-05-10 华为机器有限公司 一种薄膜电感和电源转换电路
DE102017101966A1 (de) 2017-02-01 2018-08-02 Osram Opto Semiconductors Gmbh Verfahren zum Transfer zumindest eines Halbleiterchips auf einen Zielträger
US10593449B2 (en) 2017-03-30 2020-03-17 International Business Machines Corporation Magnetic inductor with multiple magnetic layer thicknesses
US10867740B2 (en) 2017-11-30 2020-12-15 Qualcomm Incorporated Inductor apparatus and method of fabricating
JP7143159B2 (ja) 2018-09-12 2022-09-28 株式会社東芝 複合磁性材料及び回転電機
US11264158B2 (en) 2018-11-08 2022-03-01 Ferric Inc. Electromagnetically-driven ferromagnetic actuator device
WO2021049995A1 (en) 2019-09-10 2021-03-18 Ribet Frederico Method and arrangement for assembly of microchips into a separate substrate
EP4087694A1 (en) 2020-01-10 2022-11-16 Basf Se Soft-magnetic powder comprising coated particles
JP7309675B2 (ja) 2020-09-17 2023-07-18 株式会社東芝 回転電機
JP2024124859A (ja) 2023-03-03 2024-09-13 武州工業株式会社 揚げカス処理装置

Also Published As

Publication number Publication date
TW202223932A (zh) 2022-06-16
KR20230116816A (ko) 2023-08-04
WO2022120319A3 (en) 2022-07-21
US20220173035A1 (en) 2022-06-02
US20250253234A1 (en) 2025-08-07
JP2023553310A (ja) 2023-12-21
JP7792188B2 (ja) 2025-12-25
DE112021005049T5 (de) 2023-09-14
TWI817268B (zh) 2023-10-01
US12322695B2 (en) 2025-06-03
KR102857258B1 (ko) 2025-09-10

Similar Documents

Publication Publication Date Title
US20250253234A1 (en) Magnetic core with hard ferromagnetic biasing layers and structures containing same
US9679958B2 (en) Methods for manufacturing integrated multi-layer magnetic films
US10593449B2 (en) Magnetic inductor with multiple magnetic layer thicknesses
US10811177B2 (en) Stress control in magnetic inductor stacks
JP5599935B2 (ja) 集積磁気薄膜増強回路素子を有する磁気抵抗ランダムアクセスメモリ（ｍｒａｍ）
WO2022181069A1 (ja) 薄膜インダクタ素子及び薄膜可変インダクタ素子
US6346336B1 (en) Soft magnetic film soft magnetic multilayer film method of manufacturing the same and magnetic device
CN106910602A (zh) 一种薄膜电感和电源转换电路
US20170053728A1 (en) Electromagnetic device having layered magnetic material components and methods for making same
US9324495B2 (en) Planar inductors with closed magnetic loops
US8029922B2 (en) Forming electroplated inductor structures for integrated circuits
US9761368B2 (en) Laminated structures for power efficient on-chip magnetic inductors
US20240258012A1 (en) Stacked magnetic cores having small footprints
JP3373350B2 (ja) 磁性部品およびその製法
US20100194510A1 (en) Inductive Electrical Device
US11222746B2 (en) Method for forming a planar solenoid inductor
US9728321B2 (en) Transformer with ferromagnetic foil windings

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2023531532

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 112021005049

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20237019208

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 21824253

Country of ref document: EP

Kind code of ref document: A2