JP4773254B2 - 高周波磁性薄膜及び高周波電子デバイス - Google Patents
高周波磁性薄膜及び高周波電子デバイス Download PDFInfo
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- JP4773254B2 JP4773254B2 JP2006110238A JP2006110238A JP4773254B2 JP 4773254 B2 JP4773254 B2 JP 4773254B2 JP 2006110238 A JP2006110238 A JP 2006110238A JP 2006110238 A JP2006110238 A JP 2006110238A JP 4773254 B2 JP4773254 B2 JP 4773254B2
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- Prior art keywords
- magnetic
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- thin film
- magnetic layer
- frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3222—Exchange coupled hard/soft multilayers, e.g. CoPt/Co or NiFe/CoSm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
- Y10T428/325—Magnetic layer next to second metal compound-containing layer
Description
2 第二の磁性体層
3 絶縁体層
4 磁性体粒子
5 絶縁体
6 基板
7 磁性薄膜
8 導体
Claims (11)
- 第一の磁性体層と、第二の磁性体層と、絶縁体層とが、いずれも多数層含まれており、
前記第一の磁性体層は、前記第二の磁性体層よりも高い異方性磁界を有しており、
前記第二の磁性体層は、前記第一の磁性体層よりも高い飽和磁化を有しており、
前記第一の磁性体層と前記第二の磁性体層とを、一層毎に交互に積層するか、もしくは、一方の磁性体層の二層と他方の磁性体層の一層とを交互に積層するか、もしくは、第一の磁性体層の一層と第二の磁性体層の三層とを交互に積層することで、第一の磁性体層と第二の磁性体層とを規則的に積層し、
積層される全ての磁性体層の間に前記絶縁体層を形成することで、磁性体層と絶縁体層とが交互の配置となる積層構造としたことを特徴とする高周波磁性薄膜。 - 前記第一の磁性体層は、希土類金属と強磁性を示す3d遷移金属との合金を主体としていることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記第二の磁性体層は、強磁性を示す3d遷移金属またはそれらの合金を主体としていることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記第一の磁性体層は、磁性体粒子を絶縁体で包み込んだグラニュラ構造であることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記第二の磁性体層は、磁性体粒子を絶縁体で包み込んだグラニュラ構造であることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記希土類金属はSmであることを特徴とする請求項2に記載の高周波磁性薄膜。
- 前記3d遷移金属はCoであることを特徴とする請求項2または3に記載の高周波磁性薄膜。
- 前記第一の磁性体層と、前記第二の磁性体層が絶縁体層を介して交換結合していることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記絶縁体層の厚みは、0.2〜1nmであることを特徴とする請求項1に記載の高周波磁性薄膜。
- 前記磁性体層の厚みは、3〜30nmであることを特徴とする請求項1に記載の高周波磁性薄膜。
- 請求項1〜10のいずれか一項に記載の高周波磁性薄膜上に、所定形状の金属導体を形成したことを特徴とする高周波電子デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006110238A JP4773254B2 (ja) | 2006-03-15 | 2006-03-15 | 高周波磁性薄膜及び高周波電子デバイス |
EP07251075A EP1835515A1 (en) | 2006-03-15 | 2007-03-14 | High-frequency magnetic thin film and high-frequency electronic device |
US11/724,458 US7803470B2 (en) | 2006-03-15 | 2007-03-14 | High-frequency magnetic thin film and high-frequency electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006110238A JP4773254B2 (ja) | 2006-03-15 | 2006-03-15 | 高周波磁性薄膜及び高周波電子デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007251111A JP2007251111A (ja) | 2007-09-27 |
JP4773254B2 true JP4773254B2 (ja) | 2011-09-14 |
Family
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JP2006110238A Expired - Fee Related JP4773254B2 (ja) | 2006-03-15 | 2006-03-15 | 高周波磁性薄膜及び高周波電子デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US7803470B2 (ja) |
EP (1) | EP1835515A1 (ja) |
JP (1) | JP4773254B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086421A (ja) * | 2004-09-17 | 2006-03-30 | Taiyo Yuden Co Ltd | 積層磁性薄膜及びその製造方法 |
JP2009080413A (ja) | 2007-09-27 | 2009-04-16 | Fujinon Corp | 撮像光学系、内視鏡の撮像装置 |
JP2014195059A (ja) * | 2013-02-27 | 2014-10-09 | Shinko Electric Ind Co Ltd | 電子装置 |
CN108698369B (zh) * | 2016-03-04 | 2021-03-09 | 3M创新有限公司 | 磁性多层片材 |
WO2018016522A1 (ja) | 2016-07-22 | 2018-01-25 | マクセルホールディングス株式会社 | 電磁波吸収体 |
CN108022751B (zh) | 2016-10-31 | 2022-01-11 | 北京北方华创微电子装备有限公司 | 磁性薄膜叠层的沉积方法、磁性薄膜叠层及微电感器件 |
US11626228B2 (en) * | 2016-12-22 | 2023-04-11 | Rogers Corporation | Multi-layer magneto-dielectric material |
CN107146690B (zh) | 2017-03-03 | 2019-11-05 | 华为机器有限公司 | 一种薄膜电感、电源转换电路和芯片 |
JP7181064B2 (ja) * | 2018-11-21 | 2022-11-30 | 公益財団法人電磁材料研究所 | 強磁性積層膜およびその製造方法ならびに電磁誘導性電子部品 |
US20220173035A1 (en) * | 2020-12-01 | 2022-06-02 | Ferric Inc. | Magnetic core with hard ferromagnetic biasing layers and structures containing same |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0270085A (ja) * | 1988-09-02 | 1990-03-08 | Sony Corp | アモルファス軟磁性膜の製造方法 |
JP3411626B2 (ja) | 1992-08-27 | 2003-06-03 | ティーディーケイ株式会社 | 磁性多層膜および磁気抵抗効果素子ならびにそれらの製造方法 |
JPH08138228A (ja) * | 1994-11-11 | 1996-05-31 | Hitachi Ltd | 磁気記録媒体、磁気記録媒体の製造方法および磁気記録装置 |
JPH0963844A (ja) | 1995-08-23 | 1997-03-07 | Toshiba Corp | 積層磁性膜およびそれを用いた薄膜磁気素子 |
US5695864A (en) * | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
US6313973B1 (en) * | 1998-06-30 | 2001-11-06 | Kabushiki Kaisha Toshiba | Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same |
US6455174B1 (en) * | 1998-11-05 | 2002-09-24 | Hitachi Maxell, Ltd. | Magnetic recording medium, recording and reproducing head, and magnetic recording and reproducing method |
US6731446B2 (en) * | 2000-02-03 | 2004-05-04 | Matsushita Electric Industrial Co., Ltd. | Method for forming a magnetic pattern in a magnetic recording medium, method for producing a magnetic recording medium, magnetic pattern forming device, magnetic recording medium and magnetic recording device |
EP1156479A3 (en) * | 2000-05-16 | 2007-01-24 | Matsushita Electric Industrial Co., Ltd. | Magnetic recording medium, its production method and magnetic recording apparatus |
JP2002358616A (ja) * | 2000-06-12 | 2002-12-13 | Toshiba Corp | 磁気記録媒体および磁気記録装置 |
JP3665261B2 (ja) * | 2000-09-01 | 2005-06-29 | 株式会社日立製作所 | 垂直磁気記録媒体および磁気記憶装置 |
US6816330B2 (en) * | 2000-12-22 | 2004-11-09 | Matsushita Electric Industrial Co., Ltd. | Method for forming a magnetic pattern in a magnetic recording medium, magnetic recording medium magnetic recording device and photomask |
US6713195B2 (en) * | 2001-01-05 | 2004-03-30 | Nve Corporation | Magnetic devices using nanocomposite materials |
US20030091846A1 (en) * | 2001-01-18 | 2003-05-15 | Kazuyoshi Kobayashi | Granular thin magnetic film and method of manufacturing the film, laminated magnetic film, magnetic part, and electronic device |
JP2002222520A (ja) * | 2001-01-24 | 2002-08-09 | Mitsubishi Chemicals Corp | 磁化パターン形成方法及び磁化パターン形成装置並びに磁気ディスク及び磁気記録装置 |
US6650513B2 (en) * | 2001-01-29 | 2003-11-18 | International Business Machines Corporation | Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer |
JP2003016620A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 磁気記録媒体、磁気記録装置および磁気記録方法 |
US6835475B2 (en) * | 2001-07-26 | 2004-12-28 | Hitachi Global Storage Technologies Netherlands B.V. | Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films |
JP2004005874A (ja) * | 2001-08-07 | 2004-01-08 | Mitsubishi Chemicals Corp | 磁気記録媒体の磁化パターン形成方法及び製造方法、磁化パターン形成装置、磁気記録媒体、並びに磁気記録装置 |
JP3793725B2 (ja) * | 2002-01-25 | 2006-07-05 | アルプス電気株式会社 | 磁気検出素子及びその製造方法並びに前記磁気検出素子を用いた磁気検出装置 |
JP3680035B2 (ja) * | 2002-03-29 | 2005-08-10 | 株式会社東芝 | 磁気記録装置及び磁気記録方法 |
JP2003303456A (ja) * | 2002-04-09 | 2003-10-24 | Canon Inc | 光磁気記録媒体、および、その製造方法 |
JP2003317337A (ja) * | 2002-04-26 | 2003-11-07 | Canon Inc | 光磁気記録媒体及び記録方法 |
JP2003338409A (ja) * | 2002-05-22 | 2003-11-28 | Taiyo Yuden Co Ltd | 積層磁性薄膜及びその製造方法 |
JP2004039033A (ja) * | 2002-06-28 | 2004-02-05 | Toshiba Corp | 磁気記録媒体及び磁気記録再生装置 |
JP2004110917A (ja) * | 2002-09-18 | 2004-04-08 | Hitachi Ltd | 磁気記録媒体とそれを用いた磁気ディスク装置およびその製造方法 |
JP2004207651A (ja) * | 2002-12-26 | 2004-07-22 | Tdk Corp | 高周波用磁性薄膜、複合磁性薄膜およびそれを用いた磁気素子 |
JP2004235355A (ja) * | 2003-01-29 | 2004-08-19 | Tdk Corp | 軟磁性部材およびそれを用いた磁気素子 |
EP1450378A3 (en) | 2003-02-24 | 2006-07-05 | TDK Corporation | Soft magnetic member, method for manufacturing thereof and electromagnetic wave controlling sheet |
JP2004259787A (ja) * | 2003-02-24 | 2004-09-16 | Tdk Corp | 軟磁性部材、電磁波制御シート及び軟磁性部材の製造方法 |
US20080206891A1 (en) | 2003-11-12 | 2008-08-28 | Wang Shan X | Synthetic antiferromagnetic nanoparticles |
US7199984B2 (en) * | 2004-03-16 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling |
US7230265B2 (en) * | 2005-05-16 | 2007-06-12 | International Business Machines Corporation | Spin-polarization devices using rare earth-transition metal alloys |
US20070096229A1 (en) * | 2005-10-28 | 2007-05-03 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory device |
-
2006
- 2006-03-15 JP JP2006110238A patent/JP4773254B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-14 EP EP07251075A patent/EP1835515A1/en not_active Withdrawn
- 2007-03-14 US US11/724,458 patent/US7803470B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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EP1835515A1 (en) | 2007-09-19 |
JP2007251111A (ja) | 2007-09-27 |
US20070218273A1 (en) | 2007-09-20 |
US7803470B2 (en) | 2010-09-28 |
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