WO2021178399A1 - Atomic layer etching of molybdenum - Google Patents

Atomic layer etching of molybdenum Download PDF

Info

Publication number
WO2021178399A1
WO2021178399A1 PCT/US2021/020454 US2021020454W WO2021178399A1 WO 2021178399 A1 WO2021178399 A1 WO 2021178399A1 US 2021020454 W US2021020454 W US 2021020454W WO 2021178399 A1 WO2021178399 A1 WO 2021178399A1
Authority
WO
WIPO (PCT)
Prior art keywords
molybdenum
substrate
etching
plasma
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2021/020454
Other languages
English (en)
French (fr)
Other versions
WO2021178399A8 (en
Inventor
Andreas Fischer
Aaron Lynn ROUTZAHN
Thorsten Bernd LII
Seshasayee Varadarajan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to US17/905,104 priority Critical patent/US12598929B2/en
Priority to CN202180019410.9A priority patent/CN115244666A/zh
Priority to KR1020227034737A priority patent/KR20220149611A/ko
Priority to JP2022552301A priority patent/JP7728778B2/ja
Publication of WO2021178399A1 publication Critical patent/WO2021178399A1/en
Anticipated expiration legal-status Critical
Publication of WO2021178399A8 publication Critical patent/WO2021178399A8/en
Priority to JP2025134726A priority patent/JP2025169333A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Definitions

  • This invention pertains to methods and apparatuses for semiconductor device manufacturing. Specifically, embodiments of this invention pertain to methods and apparatuses for controlled etching of molybdenum in semiconductor processing.
  • the apparatus is further configured for deposition of materials on the semiconductor substrate (e.g., for deposition of molybdenum prior to m olyb denum etch ing) .
  • the apparatus is configured for activating the oxygen- containing reactant in a plasma.
  • non-transitory computer-readable medium which includes program instructions for control of an apparatus configured for semiconductor substrate processing, wherein the program instructions comprise code configured to effect etching of a molybdenum layer by causing: (i) an exposure of the substrate having the molybdenum layer to an oxygen-containing reactant to oxidize at least a portion of the molybdenum layer to molybdenum oxide: (ii) an exposure of the substrate to boron trichloride to convert the molybdenum oxide to a volatile molybdenum oxychloride while forming boron oxide on the semiconductor substrate; and (iii) an exposure of the substrate to a fluorine-containing reactant to remove the boron oxide from the semiconductor substrate.
  • Figures 3C and 3D provide different views of semiconductor devices before and after molybdenum etching in 3D NAND structure fabrication according to an embodiment provided herein.
  • semiconductor wafers having a plurality of layers of other materials (e.g., dielectrics) covering the semiconductor material are examples of semiconductor substrates.
  • the following detailed description assumes the disclosed implementations are implemented on a semiconductor wafer, such as on a 200 mm, 300 mm, or 450 mm semiconductor wafer. However, the disclosed implementations are not so limited.
  • the semiconductor wafer may be of various shapes, sizes, and materials, in addition to semiconductor wafers, other types of work pieces may take advantage of the disclosed implementations including various articles such as printed circuit boards and the like.
  • molybdenum is converted to molybdenum oxide by treating the substrate with ozone in an absence of plasma.
  • molybdenum oxide is formed by treating the substrate with plasma-activated O 2 .
  • plasma is generated directly in the process chamber housing the substrate.
  • plasma is generated remotely, away from the substrate (e.g., outside the process chamber housing the substrate), and is fed to the process chamber that houses the substrate. Thermal oxidation with O 2 is also possible at higher temperatures.
  • the molybdenum oxide formation step 103 is used to control the amount of molybdenum that wall be etched in one etch cycle.
  • the time of the substrate’s exposure to the oxygen-containing reactant can be used as the controlling factor for the amount of molybdenum that is to be converted to molybdenum oxide.
  • the time of exposure is controlled such as to convert about 1-5, such as about 3 atomic layers of molybdenum to molybdenum oxide. It is noted that subsequent reactions in one etch cycle will be limited by the amount of formed molybdenum oxide in the first reaction.
  • the exposure time to the oxygen-containing reactant is selected to be between about 10 seconds and 3 minutes.
  • the pressure in some implementations, is in the range of between about 30 mTorr and 5 Torr, e.g., between about 20 - 500 niTorr.
  • the reactants are introduced into the process chamber in gaseous form.
  • the reactants can be introduced with a carrier gas, such as helium or argon.
  • a carrier gas such as helium or argon.
  • the process gas introduced into the process chamber during each step of the etch cycle consists essentially of the reactant (e.g., O 2 and/or O 3 for the first step, BCI 3 for the second step and HF for the third step).
  • the process chamber is pre-coated with silicon tetrachloride (SiCl 4 ) prior to the etch cycles in order to prevent corrosion of chamber walls by BCI 3 and HR
  • suitable apparatuses include, without limitation, inductively coupled plasma (ICP) reactors which, in certain embodiments, may also be suitable for cyclic deposition and activation processes, including atomic layer deposition (ALD) operations.
  • ICP inductively coupled plasma
  • the apparatus has a process chamber that is used for both deposition of materials and etching using the methods provided herein.
  • the apparatus is configured to deposit molybdenum (e.g., by ALD) and etch molybdenum in the same process chamber.
  • the etch is performed in a Striker® reactor, produced by Lam Research Corp. of Fremont, CA.
  • ICP reactors are described herein in detail, it should be understood that capaci lively coupled plasma reactors, and reactants without plasma generation equipment may also be used.
  • FIG. 4 schematically shows a cross-sectional view of an inductively coupled plasma integrated etching and deposition apparatus 400 appropriate for implementing etching methods described herein, an example of which is a Kiyo® reactor, produced by Lam Research Corp. of Fremont, CA.
  • the inductively coupled plasma apparatus 400 includes an overall process chamber 424 structurally defined by chamber walls 401 and a window 411.
  • the chamber walls 401 may be fabricated from stainless steel or aluminum.
  • the window 411 may be fabricated from quartz or other dielectric material.
  • An optional internal plasma grid 450 divides the overall process chamber into an upper sub-chamber 402 and a lower sub-chamber 403. In most embodiments, plasma grid 450 may be removed, thereby utilizing a chamber space made of sub-chambers 402 and 403.
  • Elements for plasma generation include a coil 433 is positioned above window 411. In some embodiments, a coil is not used in disclosed embodiments.
  • the coil 433 is fabricated from an electrically conductive material and includes at. least one complete turn.
  • the example of a coil 433 shown in Figure 4 includes three turns.
  • the cross-sections of coil 433 are shown with symbols, and coils having an “X” extend rotationa!ly into the page, while coils having a “ ⁇ ” extend rotationally out of the page.
  • Elements for plasma generation also include an RF power supply 441 configured to supply RF power to the coil 433. In general, the RF pow 7 er supply 441 is connected to matching circuitry 439 through a connection 445.
  • Apparatus 400 may be coupled to facilities (not shown) when installed in a clean room or a fabri cation facility .
  • Facilities include plumbing that, provide processing gases, vacuum, temperature control, and environmental particle control. These facilities are coupled to apparatus 400, when installed in the target fabrication facility.
  • apparatus 400 may be coupled to a transfer chamber that allows robotics to transfer semiconductor wafers into and out of apparatus 400 using typical automation.
  • Robot 522 transfers wafer 526 between stations.
  • robot 522 has one arm, and in another embodiment, robot 522 has two arms, where each arm has an end effector 524 to pick wafers such as wafer 526 for transport.
  • Front-end robot 532 in atmospheric transfer module (ATM) 540, is used to transfer wafers 526 from cassette or Front Opening Unified Pod (FOUP) 534 in Load Port Module (LPM) 542 to airlock 530.
  • Module center 528 inside processing modules 520a-520d is one location for placing wafer 526.
  • Aligner 544 in ATM 540 is used to align wafers.
  • the computer controlling the wafer movement can he local to the cluster architecture or can be located external to the cluster architecture in the manufacturing floor, or in a remote location and connected to the cluster architecture via a network.
  • a controller as described above with respect to Figure 11 may be implemented with the tool in Figure 12.
  • Machine-readable media containing instructions for controlling process operations in accordance with the present invention may be coupled to the system controller.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
PCT/US2021/020454 2020-03-06 2021-03-02 Atomic layer etching of molybdenum Ceased WO2021178399A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US17/905,104 US12598929B2 (en) 2020-03-06 2021-03-02 Atomic layer etching of molybdenum
CN202180019410.9A CN115244666A (zh) 2020-03-06 2021-03-02 钼的原子层蚀刻
KR1020227034737A KR20220149611A (ko) 2020-03-06 2021-03-02 몰리브덴의 원자 층 에칭
JP2022552301A JP7728778B2 (ja) 2020-03-06 2021-03-02 モリブデンの原子層エッチング
JP2025134726A JP2025169333A (ja) 2020-03-06 2025-08-13 モリブデンの原子層エッチング

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062986485P 2020-03-06 2020-03-06
US62/986,485 2020-03-06

Publications (2)

Publication Number Publication Date
WO2021178399A1 true WO2021178399A1 (en) 2021-09-10
WO2021178399A8 WO2021178399A8 (en) 2022-09-22

Family

ID=77613664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2021/020454 Ceased WO2021178399A1 (en) 2020-03-06 2021-03-02 Atomic layer etching of molybdenum

Country Status (6)

Country Link
US (1) US12598929B2 (https=)
JP (2) JP7728778B2 (https=)
KR (1) KR20220149611A (https=)
CN (1) CN115244666A (https=)
TW (2) TW202541156A (https=)
WO (1) WO2021178399A1 (https=)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023107492A1 (en) * 2021-12-08 2023-06-15 Tokyo Electron Limited Methods for etching molybdenum
WO2023107867A1 (en) * 2021-12-08 2023-06-15 Lam Research Corporation Control of etch profiles in high aspect ratio holes via thermal atomic layer etching
WO2023196437A1 (en) * 2022-04-06 2023-10-12 Lam Research Corporation Deposition of metal-containing films and chamber clean
WO2023211624A1 (en) * 2022-04-25 2023-11-02 Applied Materials, Inc. Gradient oxidation and etch of pvd molybdenum for bottom up gap fill
WO2024025855A1 (en) * 2022-07-29 2024-02-01 Applied Materials, Inc. Bottom up molybdenum gapfill
KR20240016932A (ko) * 2022-07-29 2024-02-06 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
KR20240016931A (ko) * 2022-07-29 2024-02-06 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
US11970776B2 (en) 2019-01-28 2024-04-30 Lam Research Corporation Atomic layer deposition of metal films
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12074029B2 (en) 2018-11-19 2024-08-27 Lam Research Corporation Molybdenum deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12087595B2 (en) 2022-03-08 2024-09-10 Applied Materials, Inc. Metal deposition and etch in high aspect-ratio features
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
WO2025048924A1 (en) * 2023-08-29 2025-03-06 Applied Materials, Inc. One chamber multi-station selective metal removal
US12327762B2 (en) 2019-10-15 2025-06-10 Lam Research Corporation Molybdenum fill
JP2025518583A (ja) * 2022-05-27 2025-06-17 アプライド マテリアルズ インコーポレイテッド 高アスペクト比の半導体特徴における高共形金属エッチング
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
US12362188B2 (en) 2016-08-16 2025-07-15 Lam Research Corporation Method for preventing line bending during metal fill process
US12553131B2 (en) 2021-04-14 2026-02-17 Lam Research Corporation Deposition of molybdenum
US12588475B2 (en) 2021-05-14 2026-03-24 Lam Research Corporation High selectivity doped hardmask films
US12598925B2 (en) 2021-02-23 2026-04-07 Lam Research Corporation Non-metal incorporation in molybdenum on dielectric surfaces

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
WO2022179680A1 (en) * 2021-02-24 2022-09-01 Imec Vzw A method for etching molybdenum
JP7837241B2 (ja) 2022-07-29 2026-03-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US12394619B2 (en) * 2023-06-16 2025-08-19 Applied Materials, Inc. Metal oxide preclean for bottom-up gapfill in MEOL and BEOL
TW202546932A (zh) * 2024-01-30 2025-12-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
WO2025264387A1 (en) * 2024-06-21 2025-12-26 Lam Research Corporation Etching of a bottle-shaped feature

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030003374A1 (en) * 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US20100032760A1 (en) * 2008-08-08 2010-02-11 Samsung Electronics Co., Ltd. Thin-film transistor substrate and method of fabricating the same
US20170040214A1 (en) * 2015-08-07 2017-02-09 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US20190081088A1 (en) * 2017-09-08 2019-03-14 Samsung Display Co., Ltd. Display device, manufacturing method thereof, and electrode forming method
US20200027746A1 (en) * 2018-07-20 2020-01-23 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061769B2 (ja) 1983-08-10 1994-01-05 株式会社日立製作所 アルミナ膜のパターニング方法
JP2558738B2 (ja) * 1987-09-25 1996-11-27 株式会社東芝 表面処理方法
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JPH03263827A (ja) 1990-03-14 1991-11-25 Yasuhiro Horiike デジタルエツチング装置
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH06151382A (ja) 1992-11-11 1994-05-31 Toshiba Corp ドライエッチング方法
JPH06326060A (ja) 1993-05-12 1994-11-25 Hitachi Ltd 固体表面加工方法
US6022806A (en) 1994-03-15 2000-02-08 Kabushiki Kaisha Toshiba Method of forming a film in recess by vapor phase growth
JP3386287B2 (ja) 1995-05-08 2003-03-17 堀池 靖浩 プラズマエッチング装置
JP3362181B2 (ja) 1995-08-24 2003-01-07 名古屋大学長 ラジカル制御による微細加工方法および装置
GB2322235B (en) 1995-10-19 2000-09-27 Massachusetts Inst Technology Metals removal process
US5766971A (en) 1996-12-13 1998-06-16 International Business Machines Corporation Oxide strip that improves planarity
JP3611729B2 (ja) 1998-08-26 2005-01-19 セントラル硝子株式会社 エッチングガス
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
JP2002510146A (ja) 1998-01-13 2002-04-02 アプライド マテリアルズ インコーポレイテッド 異方性プラチナプロファイルのエッチング方法
US6177353B1 (en) 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
US8206568B2 (en) 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6559076B1 (en) 1999-08-19 2003-05-06 Micron Technology, Inc. Method of removing free halogen from a halogenated polymer insulating layer of a semiconductor device
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
EP1120820A3 (en) 2000-01-24 2008-01-09 Ebara Corporation Method and apparatus for forming interconnect
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
US20020058409A1 (en) 2000-11-16 2002-05-16 Ching-Te Lin Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch
US6755945B2 (en) 2001-05-04 2004-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
US7553427B2 (en) 2002-05-14 2009-06-30 Tokyo Electron Limited Plasma etching of Cu-containing layers
DE10224160A1 (de) 2002-05-31 2003-12-18 Advanced Micro Devices Inc Eine Diffusionsbarrierenschicht in Halbleitersubstraten zur Reduzierung der Kupferkontamination von der Rückseite her
US6884730B2 (en) 2002-07-02 2005-04-26 Headway Technologies, Inc. Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head
US6933239B2 (en) 2003-01-13 2005-08-23 Applied Materials, Inc. Method for removing conductive residue
US6841484B2 (en) 2003-04-17 2005-01-11 Chentsau Ying Method of fabricating a magneto-resistive random access memory (MRAM) device
JP2004332045A (ja) 2003-05-07 2004-11-25 Renesas Technology Corp 多層膜材料のドライエッチング方法
TW200428532A (en) 2003-06-03 2004-12-16 Silicon Integrated Sys Corp Method of modifying conductive wiring
US7141505B2 (en) 2003-06-27 2006-11-28 Lam Research Corporation Method for bilayer resist plasma etch
US7341946B2 (en) 2003-11-10 2008-03-11 Novellus Systems, Inc. Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
US20050233555A1 (en) 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7829152B2 (en) 2006-10-05 2010-11-09 Lam Research Corporation Electroless plating method and apparatus
US7115522B2 (en) 2004-07-09 2006-10-03 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
CN100576474C (zh) 2004-07-20 2009-12-30 应用材料股份有限公司 以钽前驱物taimata进行含钽材料的原子层沉积
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8084400B2 (en) 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
US7196955B2 (en) 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
JP4860219B2 (ja) 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
US7214626B2 (en) 2005-08-24 2007-05-08 United Microelectronics Corp. Etching process for decreasing mask defect
US20070087581A1 (en) 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
DE102006001253B4 (de) 2005-12-30 2013-02-07 Advanced Micro Devices, Inc. Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum mittels einer nasschemischen Abscheidung mit einer stromlosen und einer leistungsgesteuerten Phase
US20070238301A1 (en) 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US7795148B2 (en) 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7368393B2 (en) 2006-04-20 2008-05-06 International Business Machines Corporation Chemical oxide removal of plasma damaged SiCOH low k dielectrics
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
KR20100056468A (ko) 2007-07-17 2010-05-27 브룩스 오토메이션 인코퍼레이티드 챔버 벽들에 일체화된 모터들을 갖는 기판 처리 장치
KR101330707B1 (ko) 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7948044B2 (en) 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US8227344B2 (en) 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
KR101340793B1 (ko) 2010-07-09 2013-12-11 노벨러스 시스템즈, 인코포레이티드 고 종횡비 특징부 내부로 텅스텐 증착하기
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8546263B2 (en) 2011-04-27 2013-10-01 Applied Materials, Inc. Method of patterning of magnetic tunnel junctions
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
TWI719331B (zh) 2011-10-26 2021-02-21 美商布魯克斯自動機械公司 基板處理系統
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
TWI615341B (zh) 2011-12-16 2018-02-21 Brooks Automation, Inc. 輸送設備
KR102100425B1 (ko) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
KR102359364B1 (ko) 2012-02-10 2022-02-07 브룩스 오토메이션 인코퍼레이티드 기판 프로세싱 장치
JP2014049466A (ja) 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
US9293317B2 (en) 2012-09-12 2016-03-22 Lam Research Corporation Method and system related to semiconductor processing equipment
JP5918108B2 (ja) 2012-11-16 2016-05-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
SG11201509673SA (en) 2013-06-17 2016-01-28 Applied Materials Inc Method for copper plating through silicon vias using wet wafer back contact
JP6170754B2 (ja) 2013-06-18 2017-07-26 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
JP6347695B2 (ja) 2013-11-20 2018-06-27 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
US10265742B2 (en) 2013-11-25 2019-04-23 Applied Materials, Inc. Method for in-situ chamber clean using carbon monoxide (CO) gas utlized in an etch processing chamber
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
TW201525173A (zh) 2013-12-09 2015-07-01 應用材料股份有限公司 選擇性層沉積之方法
FR3017241B1 (fr) 2014-01-31 2017-08-25 Commissariat Energie Atomique Procede de gravure plasma
US9129798B1 (en) 2014-02-19 2015-09-08 Micron Technology, Inc. Methods of forming semiconductor structures comprising aluminum oxide
US9257638B2 (en) 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
JP6159757B2 (ja) 2014-07-10 2017-07-05 東京エレクトロン株式会社 基板の高精度エッチングのプラズマ処理方法
FR3023971B1 (fr) 2014-07-18 2016-08-05 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
DE112014006897T5 (de) 2014-08-27 2017-05-11 Ultratech, Inc. Verbessertes Kontaktloch durch Silizium
US9520294B2 (en) 2014-08-29 2016-12-13 Applied Materials, Inc. Atomic layer etch process using an electron beam
US9609730B2 (en) 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US10170324B2 (en) 2014-12-04 2019-01-01 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
WO2016100873A1 (en) 2014-12-18 2016-06-23 The Regents Of The University Of Colorado, A Body Corporate Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
KR102510737B1 (ko) 2015-03-30 2023-03-15 도쿄엘렉트론가부시키가이샤 원자층 에칭 방법
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
KR102399578B1 (ko) 2015-06-05 2022-05-17 램 리써치 코포레이션 GaN 및 다른 III-V 족 재료들의 원자층 에칭
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
US9922839B2 (en) 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9520821B1 (en) 2015-08-19 2016-12-13 Nidec Motor Corporation System and method for optimizing flux regulation in electric motors
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
KR102451098B1 (ko) 2015-09-23 2022-10-05 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법
WO2017099718A1 (en) 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
TWI658512B (zh) 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
WO2017205658A1 (en) 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching on microdevices and nanodevices
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9837312B1 (en) 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10283369B2 (en) 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
KR20180045104A (ko) 2016-10-24 2018-05-04 삼성전자주식회사 원자층 식각 방법 및 이를 포함하는 반도체 제조 방법
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10208383B2 (en) * 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10242885B2 (en) 2017-05-26 2019-03-26 Applied Materials, Inc. Selective dry etching of metal films comprising multiple metal oxides
KR101853588B1 (ko) 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법
US20190067014A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor device structures
SG11202005303XA (en) 2017-12-14 2020-07-29 Applied Materials Inc Methods of etching metal oxides with less etch residue
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
JP7461923B2 (ja) 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング
US11177216B2 (en) 2018-09-06 2021-11-16 Raytheon Company Nitride structures having low capacitance gate contacts integrated with copper damascene structures
JP7678090B2 (ja) 2020-09-03 2025-05-15 ラム リサーチ コーポレーション 誘電体に対する選択性を有した半導体、金属、または金属酸化物の原子層エッチング

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030003374A1 (en) * 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US20100032760A1 (en) * 2008-08-08 2010-02-11 Samsung Electronics Co., Ltd. Thin-film transistor substrate and method of fabricating the same
US20170040214A1 (en) * 2015-08-07 2017-02-09 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US20190081088A1 (en) * 2017-09-08 2019-03-14 Samsung Display Co., Ltd. Display device, manufacturing method thereof, and electrode forming method
US20200027746A1 (en) * 2018-07-20 2020-01-23 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12362188B2 (en) 2016-08-16 2025-07-15 Lam Research Corporation Method for preventing line bending during metal fill process
US12148623B2 (en) 2018-11-19 2024-11-19 Lam Research Corporation Deposition of tungsten on molybdenum templates
US12074029B2 (en) 2018-11-19 2024-08-27 Lam Research Corporation Molybdenum deposition
US12351914B2 (en) 2019-01-28 2025-07-08 Lam Research Corporation Deposition of films using molybdenum precursors
US11970776B2 (en) 2019-01-28 2024-04-30 Lam Research Corporation Atomic layer deposition of metal films
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
US12327762B2 (en) 2019-10-15 2025-06-10 Lam Research Corporation Molybdenum fill
US12598925B2 (en) 2021-02-23 2026-04-07 Lam Research Corporation Non-metal incorporation in molybdenum on dielectric surfaces
US12553131B2 (en) 2021-04-14 2026-02-17 Lam Research Corporation Deposition of molybdenum
US12588475B2 (en) 2021-05-14 2026-03-24 Lam Research Corporation High selectivity doped hardmask films
WO2023107867A1 (en) * 2021-12-08 2023-06-15 Lam Research Corporation Control of etch profiles in high aspect ratio holes via thermal atomic layer etching
WO2023107492A1 (en) * 2021-12-08 2023-06-15 Tokyo Electron Limited Methods for etching molybdenum
US12087595B2 (en) 2022-03-08 2024-09-10 Applied Materials, Inc. Metal deposition and etch in high aspect-ratio features
WO2023196437A1 (en) * 2022-04-06 2023-10-12 Lam Research Corporation Deposition of metal-containing films and chamber clean
US12568804B2 (en) 2022-04-25 2026-03-03 Applied Materials, Inc. Method of in-situ selective metal removal via gradient oxidation for gapfill
WO2023211624A1 (en) * 2022-04-25 2023-11-02 Applied Materials, Inc. Gradient oxidation and etch of pvd molybdenum for bottom up gap fill
JP2025518583A (ja) * 2022-05-27 2025-06-17 アプライド マテリアルズ インコーポレイテッド 高アスペクト比の半導体特徴における高共形金属エッチング
JP2024018603A (ja) * 2022-07-29 2024-02-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102723370B1 (ko) 2022-07-29 2024-10-30 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
JP7812758B2 (ja) 2022-07-29 2026-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102700850B1 (ko) 2022-07-29 2024-08-30 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
US12559836B2 (en) 2022-07-29 2026-02-24 Applied Materials, Inc. Bottom up molybdenum gapfill
KR20240016931A (ko) * 2022-07-29 2024-02-06 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
KR20240016932A (ko) * 2022-07-29 2024-02-06 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치
WO2024025855A1 (en) * 2022-07-29 2024-02-01 Applied Materials, Inc. Bottom up molybdenum gapfill
WO2025048924A1 (en) * 2023-08-29 2025-03-06 Applied Materials, Inc. One chamber multi-station selective metal removal
US12374568B2 (en) 2023-08-29 2025-07-29 Applied Materials, Inc. One chamber multi-station selective metal removal

Also Published As

Publication number Publication date
WO2021178399A8 (en) 2022-09-22
US12598929B2 (en) 2026-04-07
US20230093011A1 (en) 2023-03-23
TWI878477B (zh) 2025-04-01
JP7728778B2 (ja) 2025-08-25
JP2025169333A (ja) 2025-11-12
KR20220149611A (ko) 2022-11-08
TW202147431A (zh) 2021-12-16
JP2023517291A (ja) 2023-04-25
CN115244666A (zh) 2022-10-25
TW202541156A (zh) 2025-10-16

Similar Documents

Publication Publication Date Title
US12598929B2 (en) Atomic layer etching of molybdenum
US12183589B2 (en) Tin oxide mandrels in patterning
US12112980B2 (en) Method to create air gaps
KR102823098B1 (ko) 반도체 산업계 안팎에서 ale 평활도
US11742212B2 (en) Directional deposition in etch chamber
US20220392747A1 (en) Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
KR102829108B1 (ko) 반도체 디바이스 제작에서의 주석 옥사이드 막들
KR102653066B1 (ko) 반도체 제조시 금속 도핑된 탄소계 하드마스크 제거
US20200161139A1 (en) Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch)
US11270890B2 (en) Etching carbon layer using doped carbon as a hard mask

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21763589

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022552301

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20227034737

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21763589

Country of ref document: EP

Kind code of ref document: A1

WWR Wipo information: refused in national office

Ref document number: 1020227034737

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 17905104

Country of ref document: US