SG11202005303XA - Methods of etching metal oxides with less etch residue - Google Patents
Methods of etching metal oxides with less etch residueInfo
- Publication number
- SG11202005303XA SG11202005303XA SG11202005303XA SG11202005303XA SG11202005303XA SG 11202005303X A SG11202005303X A SG 11202005303XA SG 11202005303X A SG11202005303X A SG 11202005303XA SG 11202005303X A SG11202005303X A SG 11202005303XA SG 11202005303X A SG11202005303X A SG 11202005303XA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- metal oxides
- etch residue
- etching metal
- less etch
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762598766P | 2017-12-14 | 2017-12-14 | |
PCT/US2018/065379 WO2019118684A1 (en) | 2017-12-14 | 2018-12-13 | Methods of etching metal oxides with less etch residue |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202005303XA true SG11202005303XA (en) | 2020-07-29 |
Family
ID=66814708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202005303XA SG11202005303XA (en) | 2017-12-14 | 2018-12-13 | Methods of etching metal oxides with less etch residue |
Country Status (6)
Country | Link |
---|---|
US (2) | US10622221B2 (en) |
JP (2) | JP7366019B2 (en) |
KR (2) | KR102476262B1 (en) |
CN (1) | CN111566786B (en) |
SG (1) | SG11202005303XA (en) |
WO (1) | WO2019118684A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US10950498B2 (en) | 2017-05-31 | 2021-03-16 | Applied Materials, Inc. | Selective and self-limiting tungsten etch process |
SG11202005303XA (en) * | 2017-12-14 | 2020-07-29 | Applied Materials Inc | Methods of etching metal oxides with less etch residue |
KR20210127262A (en) | 2019-03-11 | 2021-10-21 | 램 리써치 코포레이션 | Precursors for Deposition of Molybdenum-Containing Films |
US11189499B2 (en) * | 2019-03-28 | 2021-11-30 | Tokyo Electron Limited | Atomic layer etch (ALE) of tungsten or other metal layers |
US20210066064A1 (en) * | 2019-08-30 | 2021-03-04 | Applied Materials, Inc. | Methods and apparatus for cleaning metal contacts |
TW202115827A (en) * | 2019-09-26 | 2021-04-16 | 美商應用材料股份有限公司 | Selective and self-limiting tungsten etch process |
KR20230027036A (en) * | 2020-05-22 | 2023-02-27 | 램 리써치 코포레이션 | Low resistivity contacts and interconnects |
US20230098561A1 (en) * | 2021-09-29 | 2023-03-30 | Applied Materials, Inc. | Methods for minimizing feature-to-feature gap fill height variations |
US20230187204A1 (en) * | 2021-12-10 | 2023-06-15 | Applied Materials, Inc. | Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal |
WO2023229953A1 (en) * | 2022-05-23 | 2023-11-30 | Lam Research Corporation | In situ treatment of molybdenum oxyhalide byproducts in semiconductor processing equipment |
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JPS63148637A (en) * | 1986-12-12 | 1988-06-21 | Hitachi Ltd | Dry etching |
JP2542617B2 (en) * | 1987-04-30 | 1996-10-09 | 株式会社東芝 | Method for manufacturing semiconductor device |
JP2558738B2 (en) * | 1987-09-25 | 1996-11-27 | 株式会社東芝 | Surface treatment method |
JP2720386B2 (en) * | 1988-02-05 | 1998-03-04 | 富士通株式会社 | Method for manufacturing semiconductor device |
JP2881796B2 (en) * | 1989-02-13 | 1999-04-12 | ソニー株式会社 | Method for selective formation of tungsten film |
JP3038827B2 (en) * | 1990-07-17 | 2000-05-08 | 富士通株式会社 | Method for manufacturing semiconductor device |
JPH05214530A (en) * | 1992-02-03 | 1993-08-24 | Hitachi Ltd | Method and device for filling micropore with conductor metal |
JPH06204191A (en) * | 1992-11-10 | 1994-07-22 | Sony Corp | Surface processing method after formation of metallic plug |
JPH0831932A (en) * | 1994-07-12 | 1996-02-02 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JP3696655B2 (en) * | 1995-06-09 | 2005-09-21 | ソニー株式会社 | Wiring formation method |
JP2978748B2 (en) * | 1995-11-22 | 1999-11-15 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JPH09232287A (en) * | 1996-02-26 | 1997-09-05 | Sony Corp | Etching method and contact plug formation |
JPH097969A (en) * | 1996-07-12 | 1997-01-10 | Hitachi Ltd | Method of filling fine hole with metal |
JP2000154007A (en) * | 1998-11-17 | 2000-06-06 | Kinya Adachi | Technique for etching metal oxide surface and material obtained by using same technique |
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KR100360397B1 (en) * | 1999-11-26 | 2002-11-18 | 삼성전자 주식회사 | Resist removing composition and resist removing method using the same |
JP4618842B2 (en) * | 2000-03-27 | 2011-01-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US7357138B2 (en) * | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
JP2004247472A (en) * | 2003-02-13 | 2004-09-02 | Seiko Epson Corp | Semiconductor device and thin film forming method |
US20040237997A1 (en) * | 2003-05-27 | 2004-12-02 | Applied Materials, Inc. ; | Method for removal of residue from a substrate |
US8101025B2 (en) | 2003-05-27 | 2012-01-24 | Applied Materials, Inc. | Method for controlling corrosion of a substrate |
JP2005079123A (en) * | 2003-08-29 | 2005-03-24 | Toshiba Corp | Cleaning method of depositing equipment |
JP2006319151A (en) * | 2005-05-13 | 2006-11-24 | Oki Electric Ind Co Ltd | Etching residue removing method and manufacturing method of semiconductor device using the same |
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KR100875168B1 (en) * | 2007-07-26 | 2008-12-22 | 주식회사 동부하이텍 | Method for removing polymer residue in the metalline of a semiconductor device |
WO2012070551A1 (en) | 2010-11-22 | 2012-05-31 | 株式会社アルバック | Device for manufacturing and method for manufacturing memory element |
KR101976212B1 (en) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
JP6045285B2 (en) * | 2011-10-24 | 2016-12-14 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
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KR102652512B1 (en) * | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Etching reactants and plasma-free oxide etch processes using the same |
US10256108B2 (en) | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
TW201833991A (en) | 2016-11-08 | 2018-09-16 | 美商應用材料股份有限公司 | Methods for self-aligned patterning |
WO2018106955A1 (en) * | 2016-12-09 | 2018-06-14 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
WO2018222443A1 (en) | 2017-05-31 | 2018-12-06 | Applied Materials, Inc. | Methods for wordline separation in 3d-nand devices |
TWI760540B (en) | 2017-08-13 | 2022-04-11 | 美商應用材料股份有限公司 | Self-aligned high aspect ratio structures and methods of making |
JP7029068B2 (en) * | 2017-08-29 | 2022-03-03 | セントラル硝子株式会社 | Tungsten oxide treatment method and tungsten hexafluoride manufacturing method |
SG11202001177SA (en) | 2017-09-05 | 2020-03-30 | Applied Materials Inc | Bottom-up approach to high aspect ratio hole formation in 3d memory structures |
TWI723282B (en) | 2017-09-16 | 2021-04-01 | 美商應用材料股份有限公司 | Volumetric expansion of metal-containing films by silicidation |
SG11202005303XA (en) * | 2017-12-14 | 2020-07-29 | Applied Materials Inc | Methods of etching metal oxides with less etch residue |
-
2018
- 2018-12-13 SG SG11202005303XA patent/SG11202005303XA/en unknown
- 2018-12-13 CN CN201880084984.2A patent/CN111566786B/en active Active
- 2018-12-13 KR KR1020207019662A patent/KR102476262B1/en active IP Right Grant
- 2018-12-13 KR KR1020227042647A patent/KR20230004874A/en not_active Application Discontinuation
- 2018-12-13 JP JP2020531606A patent/JP7366019B2/en active Active
- 2018-12-13 WO PCT/US2018/065379 patent/WO2019118684A1/en active Application Filing
- 2018-12-13 US US16/219,328 patent/US10622221B2/en active Active
-
2020
- 2020-03-26 US US16/831,251 patent/US11232955B2/en active Active
-
2023
- 2023-10-10 JP JP2023174924A patent/JP2024012316A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US10622221B2 (en) | 2020-04-14 |
US20200227275A1 (en) | 2020-07-16 |
US11232955B2 (en) | 2022-01-25 |
CN111566786B (en) | 2024-03-15 |
JP7366019B2 (en) | 2023-10-20 |
KR20200085935A (en) | 2020-07-15 |
JP2024012316A (en) | 2024-01-30 |
KR102476262B1 (en) | 2022-12-08 |
CN111566786A (en) | 2020-08-21 |
US20190189456A1 (en) | 2019-06-20 |
WO2019118684A1 (en) | 2019-06-20 |
KR20230004874A (en) | 2023-01-06 |
JP2021507509A (en) | 2021-02-22 |
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