WO2021077711A1 - 电极具有空隙层的体声波谐振器、滤波器及电子设备 - Google Patents

电极具有空隙层的体声波谐振器、滤波器及电子设备 Download PDF

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WO2021077711A1
WO2021077711A1 PCT/CN2020/088660 CN2020088660W WO2021077711A1 WO 2021077711 A1 WO2021077711 A1 WO 2021077711A1 CN 2020088660 W CN2020088660 W CN 2020088660W WO 2021077711 A1 WO2021077711 A1 WO 2021077711A1
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electrode
gap
resonator
layer
gap layer
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PCT/CN2020/088660
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English (en)
French (fr)
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庞慰
徐洋
郝龙
张孟伦
杨清瑞
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诺思(天津)微系统有限责任公司
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Priority to EP20879141.8A priority Critical patent/EP4068627A4/en
Publication of WO2021077711A1 publication Critical patent/WO2021077711A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the resonator or the filter.
  • the main structure of the film bulk acoustic wave resonator is a "sandwich" structure composed of electrode-piezoelectric film-electrode, that is, a layer of piezoelectric material is sandwiched between two metal electrode layers.
  • FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into electrical signal output.
  • the frequency of the 5G communication band is 3GHz-6GHz, which is higher than 4G and other communication technologies.
  • the high operating frequency means that the film thickness, especially the film thickness of the electrode, must be further reduced; however, the main negative effect brought about by the reduction of the electrode film thickness is the resonator Q caused by the increase in electrical loss. The value decreases, especially the Q value near the series resonance point and its frequency.
  • the performance of the high-frequency bulk acoustic wave filter also deteriorates greatly as the Q value of the bulk acoustic wave resonator decreases.
  • a bulk acoustic wave resonator including:
  • the piezoelectric layer is arranged between the bottom electrode and the top electrode
  • the gap electrode has a plurality of electrode layers stacked in a thickness direction of the resonator and connected to each other in parallel, and the gap layer is provided between the corresponding electrode layers.
  • the embodiment of the present invention also relates to a filter including the above-mentioned bulk acoustic wave resonator.
  • the embodiment of the present invention also relates to an electronic device including the above-mentioned filter or the above-mentioned resonator.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 2A is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer;
  • FIG. 2B is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer;
  • FIG. 2C is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to still another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer;
  • FIG. 2D is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to yet another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer;
  • FIG. 2E is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to yet another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer;
  • 3A is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer;
  • 3B is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, wherein the bottom electrode is provided with a gap layer;
  • FIG. 4 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, in which both the top electrode and the bottom electrode are provided with a gap layer;
  • FIG. 5 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a void layer and the void layer is used as an acoustic mirror structure;
  • Fig. 6 is a frequency-impedance curve diagram of a bulk acoustic wave resonator, in which the solid line corresponds to the bulk acoustic wave resonator in Fig. 2A, and the dashed line corresponds to the bulk acoustic wave resonator without a gap layer in the electrode.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the reference signs are as follows:
  • Substrate, optional materials are silicon (high-resistance silicon), gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror which is a cavity 20 in Figs. 2A-2C, and a Bragg reflective layer (for example, see Fig. 2D) and other equivalent forms can also be used.
  • the first bottom electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Electrode pin the material is the same as the first bottom electrode.
  • the second bottom electrode, the material selection range is the same as that of the first bottom electrode 30, but the specific material is not necessarily the same as that of the first bottom electrode 30.
  • Piezoelectric film layer optional aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or tantalum
  • Materials such as lithium oxide (LiTaO3) may also contain rare earth element doped materials with a certain atomic ratio of the above materials.
  • the first top electrode, the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys, etc.
  • Electrode pin the same material as the first top electrode.
  • 60 An air gap located in the top electrode, between the first top electrode 50 and the second top electrode 70.
  • the second bottom electrode, the material selection range is the same as that of the first top electrode 50, but the specific material is not necessarily the same as that of the first top electrode 50.
  • the air gap constitutes the void layer.
  • the void layer may be a vacuum gap layer, or a void layer filled with another gas medium, in addition to the air gap layer.
  • Fig. 2A is a schematic cross-sectional view taken along A1-A2 in Fig. 1 according to an exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer.
  • the resonator has double-layer top electrodes 50 and 70 (that is, the first top electrode 50 and the second top electrode 70), and the top electrode 70 covers the entire upper surface of the top electrode 50 while being on the non-electrode pin side.
  • the pin side is kept in contact with the upper surface of the top electrode 50, thereby forming an air gap 60 between the top electrodes 70 and 50.
  • an alternating electric field is applied to the piezoelectric layer 40 through the electrodes. Due to the coupling and mutual conversion of acousto-electric energy, current will flow through the electrodes. Since the top electrode of this embodiment has a double-layer electrode parallel structure, Can effectively reduce the electrical loss of the resonator. Under the excitation of the alternating electric field, the piezoelectric layer generates sound waves. When the sound waves are conducted upwards to the interface between the air gap 60 and the electrode layer 50 in the top electrode, the sound wave energy will be reflected back to the piezoelectric layer 40 (because the air and the electrode The degree of acoustic impedance mismatch is extremely large), and will not enter the electrode layer 70.
  • the electrode structure with an air gap in the present invention can significantly reduce the electrical loss of the resonator (shown as an increase in the Q value at and near the series resonance frequency), as shown in Figure 6, when the resonator is used as shown in Figure 2A
  • the impedance at the series resonance frequency point (5.9 GHz) and its neighborhood is reduced from 2.2 ohms to 1.3 ohms.
  • the air gap acts as an acoustic isolation for the top electrode 70, thereby basically avoiding the negative effects of the electrode layer 70 on the performance of the resonator (such as changes in the resonance frequency and electromechanical coupling coefficient).
  • the height of the air gap is generally greater than the typical amplitude of the resonator (about 10nm), for example, the height of the air gap is This facilitates the decoupling of acoustic energy between the top electrode 70 and the resonant cavity (in this embodiment, a composite structure composed of the top electrode 50, the piezoelectric layer 40, and the bottom electrode 30) when the resonator is working at high power.
  • FIG. 2B is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, in which the top electrode is provided with a gap layer. As shown in FIG. 2B, the upper surface of the top electrode 50 within the coverage of the air gap 60 is covered with a passivation layer 71, which can prevent the upper surface of the top electrode 50 from being oxidized by elements such as oxygen in the air gap.
  • FIG. 2C is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to still another exemplary embodiment of the present invention, wherein the top electrode is provided with a gap layer.
  • part of the upper surface of the top electrode 50 is covered with a passivation layer 71, and the upper surface of the top electrode 70 is also covered with a passivation layer 71, which protects the top electrode more comprehensively. .
  • FIG. 2D is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, in which the top electrode is provided with a gap layer.
  • the acoustic mirror 20 adopts the Bragg reflection layer form composed of alternately stacked high and low acoustic resistance layers, instead of the air cavity form shown in FIG. 2A, for example.
  • FIG. 2E is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, in which the top electrode is provided with a gap layer.
  • the acoustic mirror cavity 20 is formed between the lower surface of the lower electrode 30 and the upper surface of the substrate 10 instead of the air cavity formed inside the substrate as shown in FIG. 2A.
  • the air cavity 20 has an upwardly arched upper surface morphology, so that an air gap 70 is formed between the first upper electrode 50 and the second upper electrode 70 that are curved.
  • the top electrode 70 corresponds to an additional electrode or an additional electrode layer.
  • FIG. 3A is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, in which the bottom electrode is provided with a gap layer. As shown in FIG. 3A, an air gap 61 is formed between the bottom electrode 30 and the bottom electrode 31.
  • FIG. 3B is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to another exemplary embodiment of the present invention, in which the bottom electrode is provided with a gap layer. As shown in FIG. 3B, the upper surface of the top electrode 50 is covered with a passivation layer 71 to prevent the top electrode 50 from being oxidized by air.
  • the bottom electrode 30 corresponds to an additional electrode or an additional electrode layer.
  • FIG. 4 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, in which the top electrode and the bottom electrode are both provided with a gap layer.
  • the upper and bottom electrodes of the resonator have a double-layer structure, and an air gap 61 is formed between the bottom electrode 30 and the bottom electrode 31, and an air gap 60 is formed between the top electrode 50 and the top electrode 70.
  • the top electrode 70 and the bottom electrode 30 correspond to additional electrodes.
  • FIG. 5 is a schematic cross-sectional view taken along A1-A2 in FIG. 1 according to an exemplary embodiment of the present invention, wherein the bottom electrode is provided with a void layer and the void layer serves as an acoustic mirror structure.
  • the air gap can replace the original cavity structure in the substrate to serve as the acoustic reflection layer.
  • This structure not only simplifies the process but also significantly increases the bottom electrode.
  • the contact area between 30 and the substrate 10 increases the efficiency of heat diffusion to the substrate, thereby increasing the power capacity of the resonator.
  • the top electrode of the resonator in FIG. 5 can also adopt a structure with an air gap.
  • the bottom electrode 30 corresponds to an additional electrode or an additional electrode layer.
  • a void layer is provided in the top electrode and/or the bottom electrode of the bulk acoustic wave resonator.
  • the air gap located in the electrode can effectively reflect the sound wave, greatly reducing the sound wave energy entering the additional electrode on the side away from the piezoelectric film (or piezoelectric layer), thereby effectively suppressing or eliminating the additional electrode due to the participation in acoustic vibration. Negative effects.
  • the two layers (multi-layer) electrodes surrounding the air gap can form a parallel circuit structure, which can effectively reduce the electrical loss of the resonator and increase the Q value of the resonator, especially the Q value at the series resonance point and its nearby frequencies .
  • the additional electrode is acoustically decoupled from the resonator cavity due to the existence of the air gap (most of the sound waves are reflected back to the cavity at the air gap and do not enter the additional electrode), and the existence and parameter changes of the additional electrode do not affect the resonator except
  • Other key parameters besides Q value such as resonance frequency, electromechanical coupling coefficient, etc.).
  • the present invention avoids the parasitic series capacitance caused by the air gap, and the electromechanical coupling coefficient kt 2 of the resonator will not deteriorate; Compared with the structure in which silicon) is located between the two layers of electrodes, the air gap or vacuum gap of the present invention makes the resonant frequency of the resonator not change, other key parameters (Q value, electromechanical coupling coefficient) will not deteriorate, and the series resonance point and its vicinity The Q value at the frequency will be improved instead.
  • the electrode provided with the gap layer is a gap electrode.
  • the gap electrodes have a two-layer structure up and down, and only one gap layer is provided.
  • the present invention is not limited to this.
  • it may also be a multi-layer laminated electrode structure.
  • the effective area of the resonator is the distance between the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror in the thickness direction of the resonator. Overlapping area.
  • the gap layer may overlap with the effective area in the top view of the resonator. Furthermore, the gap layer extends over at least 50% of the area of the effective area in the lateral direction.
  • the effective area of the resonator is the overlapping area of the top electrode, the bottom electrode, the piezoelectric layer, and the void layer of the bottom electrode in the thickness direction of the resonator.
  • the void layer completely covers the cavity 20.
  • the full coverage here means that the void layer completely extends across the edge of the cavity 20 at various angles in the lateral direction.
  • the void layer may also be provided in the top electrode at the same time, or no void layer is provided.
  • the mentioned numerical range can also be the median value between the endpoint values or other values, all of which fall within the protection scope of the present invention.
  • the bulk acoustic wave resonator according to the present invention can be used to form a filter.
  • a bulk acoustic wave resonator including:
  • the piezoelectric layer is arranged between the bottom electrode and the top electrode
  • the bottom electrode and/or the top electrode are gap electrodes, the gap electrode has at least one gap layer, and in the thickness direction of the gap electrode, there is a distance between the gap layer and the top and bottom surfaces of the gap electrode.
  • the gap electrode has a gap layer.
  • the gap layer is an air gap layer or a vacuum gap layer.
  • the thickness of the void layer is In the range.
  • the thickness of the void layer is In the range.
  • the gap electrode has a plurality of electrode layers stacked in a thickness direction of the resonator and connected to each other in parallel, and the gap layer is provided between corresponding electrode layers.
  • the ends of the two electrode layers located on the upper and lower sides of the corresponding gap layer at the lateral edges of the gap layer are electrically connected to each other.
  • the lead ends of the two electrode layers are electrically connected to each other and the non-lead ends of the two electrode layers are electrically connected to each other.
  • the resonator further includes a gap passivation layer having the same planar shape as the gap layer, the gap passivation layer is laminated with the gap layer, and the gap passivation layer is disposed on the top surface of the corresponding electrode layer, and The gap layer covers the top surface of the gap passivation layer.
  • the gap electrode has only two electrode layers and only one gap layer disposed between the two electrode layers.
  • the bottom electrode is a gap electrode, and the gap layer constitutes the acoustic mirror.
  • the overlapping area of the top electrode, the bottom electrode, the piezoelectric layer, and the gap layer in the thickness direction of the resonator constitutes the effective area of the resonator
  • the resonator further includes an acoustic cavity provided on the substrate, and in a top view of the resonator, the gap layer completely covers the acoustic cavity.
  • the top electrode is a gap electrode
  • the overlapping area of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror in the thickness direction of the resonator forms the effective area of the resonator.
  • a filter comprising the bulk acoustic wave resonator according to any one of 1-13.
  • the embodiment of the present invention also relates to an electronic device including the above-mentioned resonator or the above-mentioned filter.

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Abstract

本发明涉及一种体声波谐振器，包括：基底；声学镜；底电极；顶电极；和压电层，设置在底电极与顶电极之间，其中：底电极和/或顶电极为间隙电极，所述间隙电极具有至少一个空隙层，在所述间隙电极的厚度方向上，所述空隙层与所述间隙电极的顶面与底面均存在距离。所述间隙电极具有在谐振器的厚度方向上层叠设置且彼此并联连接的多个电极层，所述空隙层设置在对应的电极层之间。本发明还涉及一种具有上述谐振器的滤波器以及具有该滤波器或谐振器的电子设备。

Description

电极具有空隙层的体声波谐振器、滤波器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器、一种具有该谐振器的滤波器，以及一种具有该谐振器或者该滤波器的电子设备。
背景技术
电子器件作为电子设备的基本元素，已经被广泛应用，其应用范围包括移动电话、汽车、家电设备等。此外，未来即将改变世界的人工智能、物联网、5G通讯等技术仍然需要依靠电子器件作为基础。
电子器件根据不同工作原理可以发挥不同的特性与优势，在所有电子器件中，利用压电效应(或逆压电效应)工作的器件是其中很重要一类，压电器件有着非常广泛的应用情景。薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为压电器件的重要成员正在通信领域发挥着重要作用，特别是FBAR滤波器在射频滤波器领域市场占有份额越来越大，FBAR具有尺寸小、谐振频率高、品质因数高、功率容量大、滚降效应好等优良特性，其滤波器正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器，在无线通信射频领域发挥巨大作用，其高灵敏度的优势也能应用到生物、物理、医学等传感领域。
薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电材料。通过在两电极间输入正弦信号，FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。
通信技术的快速发展要求滤波器工作频率不断提高，例如5G通信频段(sub-6G)的频率在3GHz-6GHz,频率高于4G等通信技术。对于体声波谐振器和滤波器，高工作频率意味着薄膜厚度尤其是电极的薄膜厚度，要进一步减小；然而电极薄膜厚度的减小带来的主要负面效应为电学损耗增加导致的谐振器Q值降低，尤其是串联谐振点及其频率附近处的Q值降低； 相应地，高工作频率体声波滤波器的性能也随着体声波谐振器的Q值降低而大幅恶化。
发明内容
为缓解或解决现有技术中的上述问题，提出本发明。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，设置在底电极与顶电极之间，
其中：
底电极和/或顶电极为间隙电极，所述间隙电极具有至少一个空隙层，在所述间隙电极的厚度方向上，所述空隙层与所述间隙电极的顶面与底面均存在距离。
可选的，所述间隙电极具有在谐振器的厚度方向上层叠设置且彼此并联连接的多个电极层，所述空隙层设置在对应的电极层之间。
本发明的实施例还涉及一种滤波器，包括上述的体声波谐振器。
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者上述的谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；
图2A为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层；
图2B为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层；
图2C为根据本发明的再一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层；
图2D为根据本发明的又一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层；
图2E为根据本发明的又一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层；
图3A为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层；
图3B为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层；
图4为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极和底电极均设置有空隙层；
图5为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层且该空隙层作为声学镜结构；
图6为体声波谐振器的频率-阻抗曲线图，其中实线对应于图2A中的体声波谐振器，虚线对应于电极中没有设置空隙层的体声波谐振器。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图。在图1中，各附图标记如下：
10：基底，可选材料为硅(高阻硅)、砷化镓、蓝宝石、石英等。
20：声学镜，在图2A-2C中为空腔20，也可采用布拉格反射层(例 如参见图2D)及其他等效形式。
30：第一底电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
36：电极引脚，材料与第一底电极相同。
31：第二底电极，材料选择范围同第一底电极30，但具体材料不一定与第一底电极30相同。
40：压电薄膜层，可选氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等材料，也可包含上述材料的一定原子比的稀土元素掺杂材料。
50：第一顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。
56：电极引脚，材料与第一顶电极相同。
60：位于顶电极之中的空气间隙，处于第一顶电极50和第二顶电极70之间。
70：第二底电极，材料选择范围同第一顶电极50，但具体材料不一定与第一顶电极50相同。
需要说明的是，空气间隙构成空隙层，但是本发明中，空隙层除了可以为空气间隙层之外，还可以是真空间隙层，也可以是填充了其他气体介质的空隙层。
图2A为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层。
如图2A所示，该谐振器具有双层顶电极50和70(即第一顶电极50与第二顶电极70)，顶电极70覆盖顶电极50的整个上表面同时在非电极引脚侧和引脚侧与顶电极50上表面保持接触，从而在顶电极70和50之间形成空气间隙60。
当谐振器工作时，交变电场通过电极施加在压电层40上，由于声电能量耦合并相互转化，电极中会有电流通过，由于本实施例的顶电极具有双层电极并联结构，因此可以有效减小谐振器的电学损耗。在交变电场的 激励下，压电层产生声波，当声波向上方传导至位于顶电极中的空气间隙60和电极层50的界面时声波能量会被反射回压电层40(因为空气和电极的声阻抗不匹配程度极大)，并不会进入电极层70。本发明中含有空气间隙的电极结构一方面可显著降低谐振器的电学损耗(表现为提升串联谐振频率处及其附近Q值的提高)，如图6所示，当谐振器使用如图2A所示的电极含空气间隙的结构时，在串联谐振频率点(5.9GHz)及其邻域阻抗从2.2欧姆降低到1.3欧姆。另一方面，空气间隙对顶电极70起到了声学隔离作用，从而基本避免电极层70对谐振器性能造成的负面影响(如谐振频率和机电耦合系数的改变)。
空气间隙的高度一般大于谐振器的典型振幅(约10nm)，例如空气间隙的高度在
Figure PCTCN2020088660-appb-000001
的范围内，这有利于谐振器在大功率工作时顶电极70与谐振腔(此实施例为顶电极50、压电层40、底电极30组成的复合结构)的声学能量解耦。
图2B为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层。如图2B所示，顶电极50处于空气间隙60覆盖范围内的上表面覆盖有钝化层71，该钝化层71可防止顶电极50的上表面被空气间隙中的氧等元素氧化。
图2C为根据本发明的再一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层。图2C所示的体波谐振器结构中，顶电极50的部分上表面覆盖有钝化层71之外，顶电极70上表面同样覆盖有钝化层71，这对顶电极的保护更为全面。
图2D为根据本发明的又一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层。图2D所示的体波谐振器结构中，声学镜20采用了由高低声阻层交替堆叠构成的布拉格反射层形式，而不是例如图2A所示的空气腔形式。
图2E为根据本发明的又一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极设置有空隙层。图2E所示的体波谐振器结构中，声学镜空腔20在下电极30下表面和基底10上表面之间形成，而不是例如图2A所示的形成在基底内部的空气腔形式。该空气腔20具有向上 拱起的弧形上表面形貌，从而导致空气间隙70形成于弯曲的第1上电极50和第2上电极70之间。
在图2A-2E所示的实施例中，顶电极70对应于附加电极或附加电极层。
图3A为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层。如图3A所示，底电极30和底电极31之间形成空气间隙61。
图3B为根据本发明的另一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层。如图3B所示，顶电极50的上表面覆盖有钝化层71，用以防止顶电极50被空气氧化。
在图3A-3B所示的实施例中，底电极30对应于附加电极或附加电极层。
图4为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中顶电极和底电极均设置有空隙层。如图4所示，该谐振器的上底电极均具有双层结构，并在在底电极30和底电极31之间形成空气间隙61，在顶电极50和顶电极70之间形成空气间隙60。在图4所示的实施例中，顶电极70和底电极30对应于附加电极。
图5为根据本发明的一个示例性实施例的沿图1中的A1-A2截得的剖面示意图，其中底电极设置有空隙层且该空隙层作为声学镜结构。如图5所示，当谐振器底电极具有空气间隙结构60时，可以此空气间隙代替原本位于基底中的空腔结构来充当声学反射层，此结构不仅可以简化工艺同时还能显著增加底电极30与基底10的接触面积，提高热量向基底的扩散效率，从而提高谐振器的功率容量。显然，图5中谐振器的顶电极同样可以采用含空气间隙的结构。在图5所示的实施例中，底电极30对应于附加电极或附加电极层。
在本发明中，在体声波谐振器的顶电极和/或底电极中设置空隙层。位于电极中的空气间隙可有效的反射声波，大幅降低进入远离压电薄膜(或压电层)一侧的附加电极的声波能量，从而有效抑制或消除所述附加电极由于参与声学振动所带来的负面效应。另外，围成空气间隙的两层(多 层)电极可以构成并联电路结构，这可有效降低谐振器的电学损耗，提高谐振器的Q值，尤其是串联谐振点及其附近频率处的Q值。
因此，附加电极由于空气间隙的存在从而与谐振器谐振腔声学解耦(绝大部分声波在空气间隙处反射回谐振腔，不进入附加电极)，附加电极的存在和参数变化不影响谐振器除Q值外的其他关键参数(如谐振频率，机电耦合系数等)。
与空气间隙位于压电层和电极之间的结构相比，本发明由于避免了空气间隙带来的寄生串联电容，谐振器的机电耦合系数kt 2不会恶化；与温度补偿夹层(如二氧化硅)位于两层电极中间的结构相比，本发明的空气间隙或真空间隙使得谐振器谐振频率不会变化，其他关键参数(Q值、机电耦合系数)不会恶化，串联谐振点及其附近频率处的Q值反而会得到提升。
在本发明中，设置了空隙层的电极为间隙电极。在图示的实施例中，间隙电极均为上下两层结构、仅设置一个空隙层，但本发明不限于此，例如，也可以是多层层叠的电极结构。
在本发明中，当声学镜结构设置于基底中且底电极中并未设置空隙层时，谐振器的有效区域为顶电极、压电层、底电极与声学镜在谐振器的厚度方向上的重叠区域。此时，空隙层在谐振器的俯视图中，可以与有效区域重叠，更进一步的，空隙层在横向方向上延伸过有效区域的面积的至少50％。
在本发明中，在底电极中设置有空隙层时，谐振器的有效区域为顶电极、底电极、压电层和底电极的空隙层在谐振器的厚度方向上的重叠区域。如图3A、3B和4所示，在谐振器的俯视图中，所述空隙层全面覆盖空腔20。这里的全面覆盖表示空隙层在横向方向上在各个角度完全延伸过空腔20的边缘。底电极中设置空隙层时，顶电极中也可以同时设置空隙层，或者不设置空隙层。
在本发明中，提到的数值范围除了可以为端点值之外，还可以为端点值之间的中值或者其他值，均在本发明的保护范围之内。
如本领域技术人员能够理解的，根据本发明的体声波谐振器可以用于形成滤波器。
基于以上，本发明提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；和
压电层，设置在底电极与顶电极之间，
其中：
底电极和/或顶电极为间隙电极，所述间隙电极具有至少一个空隙层，在所述间隙电极的厚度方向上，所述空隙层与所述间隙电极的顶面与底面均存在距离。
2、根据1所述的谐振器，其中：
所述间隙电极具有一个空隙层。
3、根据1所述的谐振器，其中：
所述空隙层为空气间隙层或者真空间隙层。
4、根据1所述的谐振器，其中：
所述空隙层的厚度在
Figure PCTCN2020088660-appb-000002
的范围内。
5、根据4所述的谐振器，其中：
所述空隙层的厚度在
Figure PCTCN2020088660-appb-000003
的范围内。
6、根据1-5中任一项所述的谐振器，其中：
所述间隙电极具有在谐振器的厚度方向上层叠设置且彼此并联连接的多个电极层，所述空隙层设置在对应的电极层之间。
7、根据6所述的谐振器，其中：
在谐振器的一个平行于谐振器的厚度方向的截面中，位于对应空隙层的上下两侧的两个电极层的位于空隙层横向边缘的端部彼此电连接。
8、根据7所述的谐振器，其中：
在谐振器的一个平行于谐振器的厚度方向的截面中，所述两个电极层的引脚端彼此电连接以及所述两个电极层的非引脚端彼此电连接。
9、根据6所述的谐振器，其中：
所述谐振器还包括与空隙层的平面形状相同的间隙钝化层，所述间隙 钝化层与所述空隙层层叠，所述间隙钝化层设置于对应的电极层的顶面，所述空隙层覆盖所述间隙钝化层的顶面。
10、根据6所述的谐振器，其中：
所述间隙电极仅具有两个电极层以及设置在两个电极层之间的仅一层空隙层。
11、根据1所述的谐振器，其中：
所述底电极为间隙电极，且所述空隙层构成所述声学镜。
12、根据11所述的谐振器，其中：
顶电极、底电极、压电层和空隙层在谐振器的厚度方向上的重叠区域构成谐振器的有效区域；且
所述谐振器还包括设置在基底的声学空腔，在谐振器的俯视图中，所述空隙层全面覆盖所述声学空腔。
13、根据1所述的谐振器，其中：
所述顶电极为间隙电极；
顶电极、压电层、底电极与声学镜在谐振器的厚度方向上的重叠区域形成谐振器的有效区域。
14、一种滤波器，包括根据1-13中任一项所述的体声波谐振器。
本发明的实施例也涉及一种电子设备，包括上述的谐振器或者上述的滤波器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (15)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极；
    顶电极；和
    压电层，设置在底电极与顶电极之间，
    其中：
    底电极和/或顶电极为间隙电极，所述间隙电极具有至少一个空隙层，在所述间隙电极的厚度方向上，所述空隙层与所述间隙电极的顶面与底面均存在距离。
  2. 根据权利要求1所述的谐振器，其中：
    所述间隙电极具有一个空隙层。
  3. 根据权利要求1所述的谐振器，其中：
    所述空隙层为空气间隙层或者真空间隙层。
  4. 根据权利要求1所述的谐振器，其中：
    所述空隙层的厚度在
    Figure PCTCN2020088660-appb-100001
    的范围内。
  5. 根据权利要求4所述的谐振器，其中：
    所述空隙层的厚度在
    Figure PCTCN2020088660-appb-100002
    的范围内。
  6. 根据权利要求1-5中任一项所述的谐振器，其中：
    所述间隙电极具有在谐振器的厚度方向上层叠设置且彼此并联连接的多个电极层，所述空隙层设置在对应的电极层之间。
  7. 根据权利要求6所述的谐振器，其中：
    在谐振器的一个平行于谐振器的厚度方向的截面中，位于对应空隙层的上下两侧的两个电极层的位于空隙层横向边缘的端部彼此电连接。
  8. 根据权利要求7所述的谐振器，其中：
    在谐振器的一个平行于谐振器的厚度方向的截面中，所述两个电极层的引脚端彼此电连接以及所述两个电极层的非引脚端彼此电连接。
  9. 根据权利要求6所述的谐振器，其中：
    所述谐振器还包括与空隙层的平面形状相同的间隙钝化层，所述间隙 钝化层与所述空隙层层叠，所述间隙钝化层设置于对应的电极层的顶面，所述空隙层覆盖所述间隙钝化层的顶面。
  10. 根据权利要求6所述的谐振器，其中：
    所述间隙电极仅具有两个电极层以及设置在两个电极层之间的仅一层空隙层。
  11. 根据权利要求1所述的谐振器，其中：
    所述底电极为间隙电极，且所述空隙层构成所述声学镜。
  12. 根据权利要求11所述的谐振器，其中：
    顶电极、底电极、压电层和空隙层在谐振器的厚度方向上的重叠区域构成谐振器的有效区域；且
    所述谐振器还包括设置在基底的声学空腔，在谐振器的俯视图中，所述空隙层全面覆盖所述声学空腔。
  13. 根据权利要求1所述的谐振器，其中：
    所述顶电极为间隙电极；
    顶电极、压电层、底电极与声学镜在谐振器的厚度方向上的重叠区域形成谐振器的有效区域。
  14. 一种滤波器，包括根据权利要求1-13中任一项所述的体声波谐振器。
  15. 一种电子设备，包括根据权利要求14所述的滤波器或者根据权利要求1-13中任一项所述的谐振器。
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