JP6510996B2 - 圧電薄膜共振器、フィルタおよびデュプレクサ - Google Patents
圧電薄膜共振器、フィルタおよびデュプレクサ Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 41
- 239000010408 film Substances 0.000 claims description 477
- 238000003780 insertion Methods 0.000 claims description 132
- 230000037431 insertion Effects 0.000 claims description 132
- 230000001681 protective effect Effects 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 47
- 230000004048 modification Effects 0.000 description 43
- 238000012986 modification Methods 0.000 description 43
- 238000000034 method Methods 0.000 description 24
- 238000005530 etching Methods 0.000 description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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Description
下部電極12の下層12a:膜厚が100nmのCr膜
下部電極12の上層12b:膜厚が200nmのRu膜
圧電膜14:膜厚が1260nmのAlN膜
下部圧電膜14a:膜厚が630nmのAlN膜
上部圧電膜14b:膜厚が630nmのAlN膜
挿入膜28:膜厚が150nmの酸化シリコン膜
上部電極16の下層16a:膜厚が230nmのRu膜
上部電極16の上層16b:膜厚が35nmのCr膜
共振領域50の幅W0:84μm
挿入膜28の挿入幅W2:2.8μm
空隙30と共振領域50の距離W4:13μm
距離W6:2μm
距離W8:8μm
12 下部電極
14 圧電膜
14a 下部圧電膜
14b 上部圧電膜
16 上部電極
20 配線
28 挿入膜
30 空隙
31 音響反射膜
50 共振領域
52 外周領域
54 中央領域
60 共振領域の外輪郭
62 挿入膜の内輪郭
63 挿入膜の外輪郭
64 空隙または音響反射膜の外輪郭
65 保護膜の外輪郭
66 上部圧電膜の外輪郭
67 配線の内輪郭
68 下部圧電膜の外輪郭
70 上部電極の引き出し領域
72 領域
Claims (11)
- 基板と、
前記基板上に設けられ、積層方向に対向する下部電極および上部電極と、
前記下部電極および前記上部電極の間に挟まれ、下部圧電膜と上部圧電膜を有し、圧電膜を挟み前記下部電極と前記上部電極とが対向する共振領域を囲む少なくとも一部において前記上部圧電膜の外輪郭は前記共振領域の外輪郭と一致または外側に位置し、前記共振領域を囲む前記少なくとも一部において前記上部圧電膜の外輪郭は前記下部圧電膜の外輪郭の内側に位置する圧電膜と、
前記下部圧電膜と前記上部圧電膜との間に挿入され、前記共振領域を囲む前記少なくとも一部において、前記共振領域内に前記共振領域の外周に沿って前記共振領域の中央領域を囲むように設けられ、前記中央領域には設けられておらず、前記共振領域を囲む前記少なくとも一部において前記下部圧電膜の上面の少なくとも一部上に設けられている挿入膜と、
前記共振領域において前記上部電極上に設けられ、前記共振領域を囲む前記少なくとも一部において、前記上部圧電膜の端面と、前記挿入膜の上面と、前記挿入膜の外側における前記下部圧電膜の表面と、に接するように設けられた保護膜と、
前記下部電極の引き出し領域において前記下部電極に接続し、前記共振領域を囲む前記少なくとも一部において、前記挿入膜の外輪郭を覆い、前記保護膜が前記挿入膜と接する領域において前記保護膜の表面と接する配線と、
を具備する圧電薄膜共振器。 - 前記共振領域を囲む前記少なくとも一部において、前記保護膜は前記下部圧電膜の側面に接する請求項1記載の圧電薄膜共振器。
- 前記共振領域を囲む前記少なくとも一部において、前記保護膜の外輪郭は前記下部圧電膜の外輪郭の外側に位置し、前記保護膜は前記下部電極の上面の一部に接する請求項2記載の圧電薄膜共振器。
- 前記保護膜と前記挿入膜とは同じ材料からなる請求項3記載の圧電薄膜共振器。
- 前記上部圧電膜および前記下部圧電膜の少なくとも一方の端面は傾斜している請求項1から4のいずれか一項記載の圧電薄膜共振器。
- 空隙、または音響特性の異なる少なくとも2種類の層が積層された音響反射膜、を含む音響反射層を具備し、
前記共振領域を囲む前記少なくとも一部において、前記下部圧電膜の外輪郭は前記音響反射層の外輪郭の内側に位置する請求項1から5のいずれか一項記載の圧電薄膜共振器。 - 基板と、
前記基板上に設けられ、積層方向に対向する下部電極および上部電極と、
前記下部電極および前記上部電極の間に挟まれ、圧電膜を挟み前記下部電極と前記上部電極とが対向する共振領域を囲む少なくとも一部において、上面の外輪郭が前記共振領域の外側に位置する圧電膜と、
前記圧電膜と前記上部電極との間に挿入され、前記共振領域を囲む前記少なくとも一部において、前記共振領域内に前記共振領域の外周に沿って前記共振領域の中央領域を囲むように設けられ、前記中央領域には設けられていない挿入膜と、
前記共振領域において前記上部電極上に設けられ、前記共振領域を囲む前記少なくとも一部において、外輪郭が前記共振領域の外輪郭の外側に位置する保護膜と、
前記下部電極の引き出し領域において、前記下部電極に接続する配線と、
を具備し、
前記共振領域を囲む前記少なくとも一部において、前記圧電膜の上面に挿入膜が設けられ、
前記共振領域を囲む前記少なくとも一部において、前記保護膜は、前記挿入膜の上面と、前記挿入膜の外側における前記圧電膜の表面と、に接し、
前記共振領域を囲む前記少なくとも一部において、前記配線は、前記挿入膜の外輪郭を覆い、前記保護膜が前記挿入膜と接する領域において前記保護膜と接する圧電薄膜共振器。 - 前記保護膜の外輪郭は前記圧電膜の上面の外輪郭と略一致する請求項7記載の圧電薄膜共振器。
- 前記挿入膜の音響インピーダンスは前記圧電膜より小さい請求項1から8のいずれか一項記載の圧電薄膜共振器。
- 請求項1から9のいずれか一項記載の圧電薄膜共振器を含むフィルタ。
- 請求項10記載のフィルタを含むデュプレクサ。
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JP7017364B2 (ja) * | 2017-10-18 | 2022-02-08 | 太陽誘電株式会社 | ラダー型フィルタ、圧電薄膜共振器およびその製造方法 |
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US11437977B2 (en) | 2018-12-14 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic resonator and elastic wave filter device |
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