WO2020191880A1 - 有机发光二极管显示装置及其制造方法 - Google Patents

有机发光二极管显示装置及其制造方法 Download PDF

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Publication number
WO2020191880A1
WO2020191880A1 PCT/CN2019/086596 CN2019086596W WO2020191880A1 WO 2020191880 A1 WO2020191880 A1 WO 2020191880A1 CN 2019086596 W CN2019086596 W CN 2019086596W WO 2020191880 A1 WO2020191880 A1 WO 2020191880A1
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Prior art keywords
layer
display device
thin film
emitting diode
film encapsulation
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PCT/CN2019/086596
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English (en)
French (fr)
Inventor
鲜于文旭
龚文亮
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武汉华星光电半导体显示技术有限公司
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Priority to JP2020517499A priority Critical patent/JP6987228B2/ja
Priority to US16/629,567 priority patent/US11195883B2/en
Publication of WO2020191880A1 publication Critical patent/WO2020191880A1/zh
Priority to US17/511,898 priority patent/US11877492B2/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technology, and in particular to an organic light emitting diode display device and a manufacturing method thereof.
  • OLED display devices have many advantages such as light and thin, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption. Therefore, OLED display devices have received attention in recent years.
  • a layer of polarizer is added to the OLED display panel to reduce light reflection and improve the contrast.
  • the polarizer directly loses more than 55% of the light emitted by the panel;
  • the material of the polarizer is mainly polyvinyl alcohol, which has a large thickness (about 100%). ⁇ m), the texture is brittle, it is easy to break during the bending process, and it is not suitable for dynamic bending display products.
  • each sub-pixel unit (R, G, B sub-pixel) is formed on the corresponding color film layer or photoresist (R, G, B photoresist), which can ensure that the output of the light-emitting layer can be greater than 60%; at the same time, forming a black matrix in the non-light-emitting area can effectively reduce the reflectivity of the panel to less than 6%.
  • This technology is called depolarizer technology (polarizer -less, POL-less).
  • the color film layer or photoresist (R, G, B photoresist) is formed on the film encapsulation layer.
  • the alkaline developer will invade the film encapsulation layer, and even affect the organic light emitting diode device, resulting in product defects and reducing product yield.
  • the patterning of the color film layer needs to be realized by the photolithography technology of four photomasks, and the manufacturing process is complicated, which results in a long process time and high manufacturing cost of the display device.
  • the depolarizer technology can reduce light reflection
  • the electrode (metal material) of the touch sensor in the OLED display device still causes light reflection, and the existing technology cannot completely solve the problem of light reflection.
  • the purpose of the present invention is to provide an organic light emitting diode display device and a manufacturing method thereof to solve the technical problems of poor flexibility, low light transmittance, complex manufacturing process, and light reflection of the display device in the prior art.
  • an organic light emitting diode display device including:
  • a pixel definition layer disposed on the substrate, and the pixel definition layer defines an opening
  • a first thin-film encapsulation sublayer disposed on the pixel definition layer and in the opening;
  • a color film layer arranged in the opening
  • a third thin-film encapsulation sub-layer disposed on the second thin-film encapsulation sub-layer.
  • a touch sensor is disposed on the third thin film package sub-layer, wherein the touch sensor includes a first metal layer and a second metal layer, the first metal layer and the second metal layer A low reflection film is provided on the top surface.
  • the organic light emitting diode display device further includes:
  • a black embankment layer, the black embankment layer and the pixel definition layer are overlapped and arranged, the black embankment layer and the pixel definition layer jointly define the opening, the material of the black embankment layer and the pixel definition layer For the black matrix.
  • the first thin film encapsulation sublayer and the third thin film encapsulation sublayer are inorganic films, and the second thin film encapsulation sublayer is an organic film.
  • the material of the low reflection film is black matrix, chromium oxide or molybdenum oxide.
  • the color film layer includes a red color resist layer and a green color resist layer respectively located in the red pixel area, the green pixel area and the blue pixel area of the organic light emitting diode display device.
  • Color resist layer and a blue color resist layer are examples of red color resist layer and green color resist layer respectively located in the red pixel area, the green pixel area and the blue pixel area of the organic light emitting diode display device.
  • the present invention also provides an organic light emitting diode display device, including:
  • a pixel definition layer disposed on the substrate, and the pixel definition layer defines an opening
  • a first thin-film encapsulation sublayer disposed on the pixel definition layer and in the opening;
  • a color film layer arranged in the opening
  • a second thin film encapsulation sublayer covering the first thin film encapsulation sublayer and the color filter layer;
  • a third thin-film encapsulation sublayer is arranged on the second thin-film encapsulation sublayer.
  • the organic light emitting diode display device further includes:
  • a black embankment layer, the black embankment layer and the pixel definition layer are overlapped and arranged, the black embankment layer and the pixel definition layer jointly define the opening, the material of the black embankment layer and the pixel definition layer For the black matrix.
  • the first thin film encapsulation sublayer and the third thin film encapsulation sublayer are inorganic films, and the second thin film encapsulation sublayer is an organic film.
  • the organic light emitting diode display device further includes:
  • the touch sensor includes a first metal layer and a second metal layer.
  • a low-reflection film is provided on the top surfaces of the first metal layer and the second metal layer, and the material of the low-reflection film is Black matrix, chromium oxide or molybdenum oxide.
  • the color film layer includes a red color resist layer and a green color resist layer respectively located in the red pixel area, the green pixel area and the blue pixel area of the organic light emitting diode display device.
  • Color resist layer and a blue color resist layer are examples of red color resist layer and green color resist layer respectively located in the red pixel area, the green pixel area and the blue pixel area of the organic light emitting diode display device.
  • the present invention also provides a method for manufacturing an organic light emitting diode display device, including:
  • a third thin film packaging sublayer is formed on the second thin film packaging sublayer.
  • the method further includes:
  • a black embankment layer is formed so that the black embankment layer and the pixel definition layer are overlapped, and the black embankment layer and the pixel definition layer jointly define the opening.
  • the first thin film encapsulation sublayer and the third thin film encapsulation sublayer are inorganic films, and the second thin film encapsulation sublayer is an organic film.
  • the method further includes:
  • the touch sensor includes a first metal layer and a second metal layer, and a low reflection film is provided on the top surfaces of the first metal layer and the second metal layer.
  • the color film layer includes a red color resist layer located in the red pixel area, the green pixel area and the blue pixel area of the organic light emitting diode display device, respectively , A green color resist layer and a blue color resist layer.
  • the present invention provides an organic light emitting diode display device and a manufacturing method thereof.
  • the thickness of the organic light emitting diode display device can be reduced, so that the organic light emitting diode display device has better flexibility and bending performance, and the light transmission of the organic light emitting diode display device can be improved rate.
  • the manufacturing process of the color film layer and the thin film encapsulation layer is compatible.
  • the color film layer is formed by inkjet printing technology, which is easy to process. Therefore, the manufacturing process time of the display device is shortened, and the manufacturing cost of the display device is reduced. Cause product defects.
  • a low-reflection film on the top surface of the metal layer of the touch sensor, the technical problem of light reflection of the display device can be solved.
  • FIG. 1A to 1E show a schematic flow chart of a method for manufacturing an organic light emitting diode display device according to the present invention.
  • FIG. 1A to 1E show a schematic flow chart of a method for manufacturing an organic light emitting diode display device according to the present invention.
  • the present invention provides a method for manufacturing organic light emitting diodes (organic light emitting diode (OLED) display device method.
  • the method includes forming a display panel and a touch panel.
  • the method includes the following steps.
  • a substrate 10 is provided.
  • the substrate 10 has a buffer layer 20, a thin film transistor device 30, a flat layer 40, and an anode 51.
  • the substrate may be a flexible substrate.
  • the material of the substrate 10 may be polyimide (PI).
  • a pixel definition layer 60 and a black bank layer 70 are formed on the substrate 10 so that the black bank layer 70 and the pixel definition layer 60 overlap.
  • the black dam layer 70 and the pixel definition layer 60 jointly define an opening 80. Therefore, the pixel area is limited.
  • the pixel area includes a red pixel area, a green pixel area, and a blue pixel area.
  • a light emitting layer 52 is formed in the opening 80.
  • the light emitting layer 52 includes a red light emitting layer 521, a green light emitting layer 522, and a blue light emitting layer 523.
  • the red light-emitting layer 521, the green light-emitting layer 522, and the blue light-emitting layer 523 can be formed in the red pixel area, the green pixel area, and the blue pixel area by evaporation.
  • a cathode layer 53 and a first thin film encapsulation sublayer 91 are formed on the pixel definition layer 60 and in the opening 80.
  • the red ink droplet 210, the green ink droplet 220, and the blue ink droplet 230 can be printed in the opening 80 in the red pixel area, the green pixel area, and the blue pixel area by inkjet printing technology, and then pass through Use ultraviolet light to irradiate the ink or bake it (for example, 90°C or lower), and solidify the ink droplets to form a red color resist layer 211, a green color resist layer 221, and a blue color resist, respectively. ⁇ 231.
  • the color filter layer 200 includes the red color resist layer 211, the green color resist layer 221, and the blue pixel region respectively located in the red pixel region, the green pixel region, and the blue pixel region of the OLED display device. Color resist layer 231.
  • a second thin film encapsulation sublayer 92 is formed so that the second thin film encapsulation sublayer 92 covers the first thin film encapsulation sublayer 91 and the color filter layer 200.
  • a third thin film encapsulation sublayer 93 is formed on the second thin film encapsulation sublayer 92.
  • the first thin film encapsulation sublayer 91 and the third thin film encapsulation sublayer 93 are inorganic films
  • the second thin film encapsulation sublayer 92 is an organic film.
  • the inorganic film has the properties of water blocking and oxygen blocking, so the inorganic film can prevent water and oxygen from invading the OLED device and damaging the OLED device.
  • the organic film can relieve stress, so the formation of the organic film helps to make the display device more flexible.
  • the material of the inorganic film can be SiN X , SiO X , SiON or AlO X.
  • the material of the organic film can be photosensitive acrylic or methacrylic resin.
  • the inorganic film can be formed by plasma enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD).
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic layer deposition
  • the organic film can be formed using ink jet printing (IJP) technology.
  • the first thin film packaging sublayer 91, the second thin film packaging sublayer 92 and the third thin film packaging sublayer 93 constitute a thin film packaging layer 90.
  • the film encapsulation layer 90 protects the OLED device on the one hand, and has good flexibility on the other hand.
  • the first thin film encapsulation sublayer 91 may also include a multilayer inorganic film.
  • the first thin-film encapsulation sublayer 91 may also be a composite multilayer film including an organic film and an inorganic film.
  • the specific materials of the first thin film encapsulation sublayer 91, the second thin film encapsulation sublayer 92 and the third thin film encapsulation sublayer 93 in the thin film encapsulation layer 90 are organic films or inorganic films. Display products use different materials of the thin film encapsulation layer 90, as long as the thin film encapsulation layer 90 can protect the OLED device or has good flexibility, it falls within the protection scope of the present invention.
  • the method further includes forming a touch sensor 300 on the third thin film encapsulation sublayer 93.
  • the touch sensor 300 includes a first metal layer 310 and a second metal layer 320.
  • the top surfaces of the first metal layer 310 and the second metal layer 320 are provided with low reflection films 311 and 321.
  • a first passivation layer 410 is formed on the third thin film encapsulation sublayer 93 first. Then, the first metal layer 310 is formed on the first passivation layer 410 by photolithography, and the low reflection film 311 is formed on the surface of the first metal layer 310 by photolithography. Then, a second passivation layer 420 is formed on the first passivation layer 410 and the low reflection film 311. Finally, the second metal layer 320 is formed on the second passivation layer 420 by photolithography technology, and the low reflection film 321 is formed on the surface of the second metal layer 320 by photolithography technology.
  • cover glass 500 is attached to the display panel.
  • the pixel definition layer 60 and the black bank layer 70 are separately formed by two photolithography techniques.
  • only the pixel definition layer 60 may be formed.
  • a single pixel definition layer 60 can be used to replace the pixel definition layer 60 and the black bank layer formed separately by two photolithography techniques. 70.
  • the pixel definition layer 60 and the black dam layer 70 are located in the non-luminous area, so the material can be a black matrix, which can shield light or avoid light reflection.
  • the material of the black matrix is mainly composed of thermal and photosensitive polymers and black fillers; the thermal and photosensitive polymers can be acrylic or methacrylic resins, and the black fillers can be carbon black, organic light-absorbing materials, etc.
  • the low-reflection films 311 and 321 formed on the top surfaces of the first metal layer 310 and the second metal layer 320 can also be made of black matrix, or chromium oxide or molybdenum oxide, which can also provide shading and avoidance. The technical effect of light reflection.
  • the first thin film encapsulation sublayer 91, the second thin film encapsulation sublayer 92 and the third thin film encapsulation sublayer 93 constitute the thin film encapsulation layer 90.
  • the color filter layer 200 is formed between the first thin film encapsulation sublayer 91 and the second thin film encapsulation sublayer 92. Both the second thin-film encapsulation sublayer 92 and the color filter layer 200 can be formed by inkjet printing technology. Therefore, the color filter layer 200 is embedded in the thin film encapsulation layer 90, and the manufacturing processes of the two are compatible.
  • the color filter layer 200 is embedded in the thin film encapsulation layer 90, the total thickness of the color filter layer 200 and the thin film encapsulation layer 90 is reduced compared to the prior art, so that the OLED display device has better flexibility and flexibility. Fold performance.
  • the light transmittance of the OLED display device can be increased to about 60%.
  • the color film layer 200 is formed by inkjet printing technology.
  • the color film layer of the present invention has a simple manufacturing process, shortens the manufacturing process time of the display device, and reduces the manufacturing cost of the display device.
  • the manufacturing of the color film layer does not require the use of a developer, and will not affect the OLED device and cause product defects.
  • the invention also provides an organic light emitting diode (organic light emitting diode, OLED) display device.
  • OLED organic light emitting diode
  • the OLED display device includes:
  • a pixel defining layer 60 is disposed on the substrate 10, and the pixel defining layer 60 defines an opening 80;
  • a first thin-film encapsulation sublayer 91 disposed on the pixel defining layer 60 and in the opening 80;
  • a third film encapsulation sublayer 93 is disposed on the second film encapsulation sublayer 92.
  • the OLED display device may further include a black embankment layer 70, the black embankment layer 70 and the pixel definition layer 60 are overlapped and arranged, and the black embankment layer 70 and the pixel 60 define The layers collectively define the opening 80.
  • the first thin film encapsulation sublayer 91 and the third thin film encapsulation sublayer 93 are inorganic films, and the second thin film encapsulation sublayer 92 is an organic film.
  • the OLED display device may further include a touch sensor 300.
  • the touch sensor 300 is disposed on the third thin-film packaging sublayer 93.
  • the touch sensor 300 includes a first metal layer 310 and a second metal layer 320.
  • the top surfaces of the first metal layer 310 and the second metal layer 320 are provided with low reflection films 311 and 321.
  • the color filter layer 200 includes a red color resist layer 211, a green color resist layer 221, and a red color resist layer 211, a green color resist layer 221, and a red pixel region, a green pixel region, and a blue pixel region of the organic light emitting diode display device.
  • the present invention provides an organic light emitting diode display device and a manufacturing method thereof.
  • the thickness of the organic light emitting diode display device can be reduced, so that the organic light emitting diode display device has better flexibility and bending performance, and the light transmission of the organic light emitting diode display device can be improved rate.
  • the manufacturing process of the color film layer and the thin film encapsulation layer is compatible.
  • the color film layer is formed by inkjet printing technology, which is easy to process. Therefore, the manufacturing process time of the display device is shortened, and the manufacturing cost of the display device is reduced. Cause product defects.
  • a low-reflection film on the top surface of the metal layer of the touch sensor, the technical problem of light reflection of the display device can be solved.

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Abstract

本发明提出一种有机发光二极管显示装置。所述有机发光二极管显示装置包括：一基板；一像素定义层，设置在所述基板上，所述像素定义层定义出一开口；一第一薄膜封装子层，设置在所述像素定义层上及所述开口中；一彩膜层，设置在所述开口中；一第二薄膜封装子层，覆盖所述第一薄膜封装子层与所述彩膜层；及一第三薄膜封装子层，设置在所述第二薄膜封装子层上。

Description

有机发光二极管显示装置及其制造方法 技术领域
本发明涉及显示技术领域，特别涉及一种有机发光二极管显示装置及其制造方法。
 背景技术
有机发光二极管(organic light emitting diode，OLED)显示装置具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，因此OLED显示装置近几年受到人们的关注。
为了解决OLED显示装置在室外强光照射下的对比度低的问题，OLED显示面板上增加一层偏光片来减少光反射，以提高对比度。但是，一方面，偏光片直接损失了面板超过55%的出光；另一方面，偏光片的材质主要是聚乙烯醇，其厚度大(约100 μm)、质地脆，很容易在弯曲过程中发生断裂，不适用于动态弯折显示产品。因此，通过在有机发光二极管显示器的每一个子像素单元(R, G, B sub-pixel)上形成对应的彩膜层或光刻胶(R, G, B photoresist)，可保证发光层的输出可大于60%；同时在非发光区域形成黑色矩阵可有效地降低面板的反射率至小于6%，这一技术被称为去偏光片技术(polarizer-less，POL-less)。
然而，根据现有技术，彩膜层或光刻胶(R, G, B photoresist)是形成在薄膜封装层上。在彩膜层的图案化过程中，碱性显影液会入侵薄膜封装层，甚至影响有机发光二极管器件，导致产品缺陷、降低产品良率。又，彩膜层的图案化需要利用四道光罩的光刻技术来实现，其制造工艺复杂，导致显示装置的制程时间长及制造成本高。
另外，尽管去偏光片技术可以减少光反射，但是OLED显示装置中的触控传感器的电极(金属材质)仍会造成光反射，现有技术无法完全解决光反射的问题。
因此，有必要提供一种有机发光二极管显示装置及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种有机发光二极管显示装置及其制造方法，以解决现有技术中显示装置的柔性不佳、透光率低、制造工艺复杂、存在光反射的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种有机发光二极管显示装置，包括：
一基板；
一像素定义层，设置在所述基板上，所述像素定义层定义出一开口；
一第一薄膜封装子层，设置在所述像素定义层上及所述开口中；
一彩膜层，设置在所述开口中；
一第二薄膜封装子层，覆盖所述第一薄膜封装子层与所述彩膜层；
一第三薄膜封装子层，设置在所述第二薄膜封装子层上；及
一触控传感器，设置在所述第三薄膜封装子层上，其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜。
在本发明的有机发光二极管显示装置中，所述的有机发光二极管显示装置更包括：
一黑色堤坝层，所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口，所述黑色堤坝层与所述像素定义层的材质为黑色矩阵。
在本发明的有机发光二极管显示装置中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
在本发明的有机发光二极管显示装置中，所述低反射膜的材质为黑色矩阵、氧化铬或氧化钼。
在本发明的有机发光二极管显示装置中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
本发明还提供一种有机发光二极管显示装置，包括：
一基板；
一像素定义层，设置在所述基板上，所述像素定义层定义出一开口；
一第一薄膜封装子层，设置在所述像素定义层上及所述开口中；
一彩膜层，设置在所述开口中；
一第二薄膜封装子层，覆盖所述第一薄膜封装子层与所述彩膜层；及
一第三薄膜封装子层，设置在所述第二薄膜封装子层上。
在本发明的有机发光二极管显示装置中，所述有机发光二极管显示装置更包括：
一黑色堤坝层，所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口，所述黑色堤坝层与所述像素定义层的材质为黑色矩阵。
在本发明的有机发光二极管显示装置中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
在本发明的有机发光二极管显示装置中，所述有机发光二极管显示装置更包括：
一触控传感器，设置在所述第三薄膜封装子层上；
其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜，所述低反射膜的材质为黑色矩阵、氧化铬或氧化钼。
在本发明的有机发光二极管显示装置中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
本发明还提供一种制造有机发光二极管显示装置的方法，包括：
提供一基板；
形成一像素定义层在所述基板上，所述像素定义层定义出一开口；
形成一第一薄膜封装子层在所述像素定义层上及所述开口中；
利用喷墨打印技术来形成一彩膜层在所述开口中；
形成一第二薄膜封装子层，使得所述第二薄膜封装子层覆盖所述第一薄膜封装子层与所述彩膜层；及
形成一第三薄膜封装子层在所述第二薄膜封装子层上。
在本发明的制造有机发光二极管显示装置的方法中，所述方法更包括：
形成一黑色堤坝层，使得所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口。
在本发明的制造有机发光二极管显示装置的方法中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
在本发明的制造有机发光二极管显示装置的方法中，所述方法更包括：
形成一触控传感器在所述第三薄膜封装子层上；
其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜。
在本发明的制造有机发光二极管显示装置的方法中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
 有益效果
相较于现有技术，本发明提出一种有机发光二极管显示装置及其制造方法。通过将彩膜层内嵌在薄膜封装层中，可以减少有机发光二极管显示装置的厚度，使得有机发光二极管显示装置具有更佳的柔性与弯折性能，并且可以提升有机发光二极管显示装置的透光率。此外，彩膜层与薄膜封装层两者的制造工艺相容，彩膜层利用喷墨打印技术来形成是制程简易的，因此缩短显示装置的制程时间、降低显示装置的制造成本，且不会导致产品缺陷。又，通过形成低反射膜在触控传感器的金属层的顶表面上，可以解决显示装置的光反射的技术问题。
 附图说明
图1A至图1E显示根据本发明制造有机发光二极管显示装置的方法的流程示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1A至图1E。图1A至图1E显示根据本发明制造有机发光二极管显示装置的方法的流程示意图。本发明提出一种制造有机发光二极管(organic light emitting diode，OLED)显示装置的方法。所述方法包括形成显示面板及触控面板。所述方法包括以下步骤。
如图1A所示，首先，提供一基板10。所述基板10上具有缓冲层20、薄膜晶体管器件30、平坦层40、阳极51。为了使得OLED显示装置具有柔性，所述基板可以是一柔性基板。例如，所述基板10的材质可以是聚酰亚胺(polyimide，PI)。
其次，形成一像素定义层60与一黑色堤坝层70在所述基板10上，使得所述黑色堤坝层70与所述像素定义层60重叠设置。所述黑色堤坝层70与所述像素定义层60共同定义出开口80。因此，像素区域得以被限定。所述像素区域包括红色像素区域、绿色像素区域和蓝色像素区域。
接着，形成发光层52在所述开口80中。所述发光层52包括红色发光层521、绿色发光层522和蓝色发光层523。在一个优选的实施例中，可以利用蒸镀方式来分别形成所述红色发光层521、所述绿色发光层522和所述蓝色发光层523在红色像素区域、绿色像素区域和蓝色像素区域中的开口80中。又，形成一阴极层53与一第一薄膜封装子层91在所述像素定义层60上及所述开口80中。
如图1B至图1C所示，利用喷墨打印技术(ink jet printing，IJP)来形成一彩膜层200在所述开口80中。例如，可以利用喷墨打印技术将红色墨水液滴210、绿色墨水液滴220和蓝色墨水液滴230分别打印在红色像素区域、绿色像素区域和蓝色像素区域中的开口80中，然后通过使用紫外光来照射墨水或将其烘烤(例如90℃或低于90℃)的方式，将墨水液滴固化以分别形成一红色色阻层211、一绿色色阻层221和一蓝色色阻层231。亦即，所述彩膜层200包括分别位在OLED显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的所述红色色阻层211、所述绿色色阻层221和所述蓝色色阻层231。
如图1D所示，形成一第二薄膜封装子层92，使得所述第二薄膜封装子层92覆盖所述第一薄膜封装子层91与所述彩膜层200。又，形成一第三薄膜封装子层93在所述第二薄膜封装子层92上。
在一个优选的实施例中，所述第一薄膜封装子层91与所述第三薄膜封装子层93是无机膜，所述第二薄膜封装子层92是有机膜。无机膜具有阻水、阻氧的性质，因此无机膜可以避免水和氧入侵OLED器件而损坏OLED器件。有机膜可以缓解应力，因此有机膜的形成有助于使得显示装置具有更良好的柔性。
无机膜的材质可以是SiN X、SiO X、SiON或AlO X。有机膜的材质可以是光敏型的丙烯酸或甲基丙烯酸系列的树脂。可以利用等离子体增强化学的气相沉积法(plasma enhanced chemical vapor deposition，PECVD)或原子沉积技术(atomic layer deposition，ALD)来形成所述无机膜。可以利用喷墨打印技术(ink jet printing，IJP)来形成所述有机膜。
所述第一薄膜封装子层91、所述第二薄膜封装子层92与所述第三薄膜封装子层93构成薄膜封装层90。薄膜封装层90一方面保护OLED器件，另一方面具有良好的柔性。
在一个优选的实施例中，所述第一薄膜封装子层91亦可以包括多层无机膜。或者，所述第一薄膜封装子层91亦可以是包括有机膜和无机膜的复合多层膜。
本发明对于薄膜封装层90中的第一薄膜封装子层91、第二薄膜封装子层92与第三薄膜封装子层93的具体材质为有机膜或无机膜不做具体限定，可以根据不同的显示产品来使用不同的薄膜封装层90的材质，只要薄膜封装层90可以达到保护OLED器件或具有良好的柔性，即落入本发明的保护范围内。
至此，已经完成了OLED显示面板的制造。
如图1D所示，为了形成触控面板在OLED显示面板上，所述方法更包括形成一触控传感器300在所述第三薄膜封装子层93上。所述触控传感器300包括一第一金属层310与一第二金属层320，所述第一金属层310与所述第二金属层320的顶表面上设置有一低反射膜311、321。
更具体地说，先形成一第一钝化层410在所述第三薄膜封装子层93上。接着，利用光刻技术形成所述第一金属层310在所述第一钝化层410上，及利用光刻技术形成所述低反射膜311在所述第一金属层310的表面。然后，形成一第二钝化层420在所述第一钝化层410与所述低反射膜311上。最后，利用光刻技术形成所述第二金属层320在所述第二钝化层420上，及利用光刻技术形成所述低反射膜321在所述第二金属层320的表面。
最后，将盖玻璃500贴合至所述显示面板。
至此，完成了OLED显示装置的制造。
根据本实施例，像素定义层60与黑色堤坝层70是利用两次光刻技术来个别形成。然而，在一个优选的实施例中，可以仅形成像素定义层60。只要像素定义层60的厚度足够厚，而能使墨水被打印在开口80中，即能以单一个像素定义层60来取代利用两次光刻技术来个别形成的像素定义层60与黑色堤坝层70。
根据本发明，所述像素定义层60和所述黑色堤坝层70位在非发光区域，所以其材质可以为黑色矩阵，黑色矩阵可以遮光，亦可以避免光反射。黑色矩阵的材质主要由热敏、光敏型聚合物以及黑色填料组成；其中热敏和光敏型聚合物可以是丙烯酸或甲基丙烯酸系列的树脂，黑色填料可以是炭黑、有机吸光材料等。另外，形成在第一金属层310与第二金属层320的顶表面上的低反射膜311、321的材质亦可以为黑色矩阵，或是氧化铬或氧化钼，其亦可以起到遮光和避免光反射的技术效果。
如上所述，第一薄膜封装子层91、第二薄膜封装子层92与第三薄膜封装子层93构成薄膜封装层90。彩膜层200是被形成在所述第一薄膜封装子层91与所述第二薄膜封装子层92之间。所述第二薄膜封装子层92与所述彩膜层200均可以利用喷墨打印技术来形成。因此，彩膜层200是被内嵌在薄膜封装层90中，且两者的制造工艺相容。而且，由于彩膜层200是被内嵌在薄膜封装层90中，彩膜层200与薄膜封装层90的总厚度相较于现有技术得以减少，使得OLED显示装置具有更佳的柔性与弯折性能。又，由于厚度减少，OLED显示装置的透光率得以提高至约60%。
此外，所述彩膜层200是利用喷墨打印技术来形成的。相较于现有技术的彩膜层是利用四道光罩的光刻技术来实现，本发明的彩膜层的制造过程简易，缩短显示装置的制程时间、降低显示装置的制造成本。而且，彩膜层的制造不需要使用显影液，不会对OLED器件造成影响、导致产品缺陷。
本发明还提供一种有机发光二极管(organic light emitting diode，OLED)显示装置。所述OLED显示装置包括：
一基板10；
一像素定义层60，设置在所述基板10上，所述像素定义层60定义出一开口80；
一第一薄膜封装子层91，设置在所述像素定义层60上及所述开口80中；
一彩膜层200，设置在所述开口中；
一第二薄膜封装子层92，覆盖所述第一薄膜封装子层91与所述彩膜层200；及
一第三薄膜封装子层93，设置在所述第二薄膜封装子层92上。
根据本发明的一个实施例，所述OLED显示装置可以更包括一黑色堤坝层70，所述黑色堤坝层70与所述像素定义层60重叠设置，所述黑色堤坝层70与所述像素60定义层共同定义出所述开口80。
根据本发明的一个实施例，所述第一薄膜封装子层91与所述第三薄膜封装子层93是无机膜，所述第二薄膜封装子层92是有机膜。
根据本发明的一个实施例，所述OLED显示装置可以更包括一触控传感器300。所述触控传感器300设置在所述第三薄膜封装子层93上。所述触控传感器300包括一第一金属层310与一第二金属层320，所述第一金属层310与所述第二金属层320的顶表面上设置有一低反射膜311、321。
根据本发明的一个实施例，所述彩膜层200包括分别位在有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的红色色阻层211、绿色色阻层221和蓝色色阻层231。
相较于现有技术，本发明提出一种有机发光二极管显示装置及其制造方法。通过将彩膜层内嵌在薄膜封装层中，可以减少有机发光二极管显示装置的厚度，使得有机发光二极管显示装置具有更佳的柔性与弯折性能，并且可以提升有机发光二极管显示装置的透光率。此外，彩膜层与薄膜封装层两者的制造工艺相容，彩膜层利用喷墨打印技术来形成是制程简易的，因此缩短显示装置的制程时间、降低显示装置的制造成本，且不会导致产品缺陷。又，通过形成低反射膜在触控传感器的金属层的顶表面上，可以解决显示装置的光反射的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种有机发光二极管显示装置，包括：
    一基板；
    一像素定义层，设置在所述基板上，所述像素定义层定义出一开口；
    一第一薄膜封装子层，设置在所述像素定义层上及所述开口中；
    一彩膜层，设置在所述开口中；
    一第二薄膜封装子层，覆盖所述第一薄膜封装子层与所述彩膜层；
    一第三薄膜封装子层，设置在所述第二薄膜封装子层上；及
    一触控传感器，设置在所述第三薄膜封装子层上，其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜。
  2. 根据权利要求1所述的有机发光二极管显示装置，更包括：
    一黑色堤坝层，所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口，所述黑色堤坝层与所述像素定义层的材质为黑色矩阵。
  3. 根据权利要求1所述的有机发光二极管显示装置，其中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
  4. 根据权利要求1所述的有机发光二极管显示装置，其中，所述低反射膜的材质为黑色矩阵、氧化铬或氧化钼。
  5. 根据权利要求1所述的有机发光二极管显示装置，其中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
  6. 一种有机发光二极管显示装置，包括：
    一基板；
    一像素定义层，设置在所述基板上，所述像素定义层定义出一开口；
    一第一薄膜封装子层，设置在所述像素定义层上及所述开口中；
    一彩膜层，设置在所述开口中；
    一第二薄膜封装子层，覆盖所述第一薄膜封装子层与所述彩膜层；及
    一第三薄膜封装子层，设置在所述第二薄膜封装子层上。
  7. 根据权利要求6所述的有机发光二极管显示装置，更包括：
    一黑色堤坝层，所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口，所述黑色堤坝层与所述像素定义层的材质为黑色矩阵。
  8. 根据权利要求6所述的有机发光二极管显示装置，其中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
  9. 根据权利要求6所述的有机发光二极管显示装置，更包括：
    一触控传感器，设置在所述第三薄膜封装子层上；
    其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜，所述低反射膜的材质为黑色矩阵、氧化铬或氧化钼。
  10. 根据权利要求6所述的有机发光二极管显示装置，其中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
  11. 一种制造有机发光二极管显示装置的方法，包括：
    提供一基板；
    形成一像素定义层在所述基板上，所述像素定义层定义出一开口；
    形成一第一薄膜封装子层在所述像素定义层上及所述开口中；
    利用喷墨打印技术来形成一彩膜层在所述开口中；
    形成一第二薄膜封装子层，使得所述第二薄膜封装子层覆盖所述第一薄膜封装子层与所述彩膜层；及
    形成一第三薄膜封装子层在所述第二薄膜封装子层上。
  12. 根据权利要求11所述的制造有机发光二极管显示装置的方法，其中，所述方法更包括：
    形成一黑色堤坝层，使得所述黑色堤坝层与所述像素定义层重叠设置，所述黑色堤坝层与所述像素定义层共同定义出所述开口。
  13. 根据权利要求11所述的制造有机发光二极管显示装置的方法，其中，所述第一薄膜封装子层与所述第三薄膜封装子层是无机膜，所述第二薄膜封装子层是有机膜。
  14. 根据权利要求11所述的制造有机发光二极管显示装置的方法，其中，所述方法更包括：
    形成一触控传感器在所述第三薄膜封装子层上；
    其中所述触控传感器包括一第一金属层与一第二金属层，所述第一金属层与所述第二金属层的顶表面上设置有一低反射膜。
  15. 根据权利要求11所述的制造有机发光二极管显示装置的方法，其中，所述彩膜层包括分别位在所述有机发光二极管显示装置的红色像素区域、绿色像素区域和蓝色像素区域中的一红色色阻层、一绿色色阻层和一蓝色色阻层。
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