WO2019153401A1 - 一种oled显示面板 - Google Patents

一种oled显示面板 Download PDF

Info

Publication number
WO2019153401A1
WO2019153401A1 PCT/CN2018/078491 CN2018078491W WO2019153401A1 WO 2019153401 A1 WO2019153401 A1 WO 2019153401A1 CN 2018078491 W CN2018078491 W CN 2018078491W WO 2019153401 A1 WO2019153401 A1 WO 2019153401A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
color
oled
color resist
display panel
Prior art date
Application number
PCT/CN2018/078491
Other languages
English (en)
French (fr)
Inventor
周星宇
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US15/767,353 priority Critical patent/US20190245022A1/en
Publication of WO2019153401A1 publication Critical patent/WO2019153401A1/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters

Definitions

  • the present invention relates to the field of flat panel displays, and in particular to an OLED display panel.
  • OLED Organic Light-Emitting Diode
  • LCD Liquid Crystal displays
  • OLEDs have the advantages of more power saving, thinner, and wider viewing angle, which is unmatched by LCD.
  • people are increasingly demanding the degree of detail, that is, the resolution, but the production of high-quality, high-resolution OLED displays still faces many challenges.
  • the OLED display panel includes an array substrate and a color film cover, the array substrate includes a first substrate, a thin film transistor layer, and an OLED layer;
  • the color filter cover includes a second substrate and a color resist layer, the color resist layer includes a first color resistive region and a second color resisting region, wherein the first color resisting region corresponds to the OLED layer,
  • the second color resisting region corresponds to the thin film transistor, and when the second color resisting region includes one of a red color blocking block, a green color blocking block, and a blue color blocking block, the light enters through the second substrate and the second color resisting region.
  • the thin film transistor layer which is an oxide semiconductor, is exposed to light, making the thin film transistor unstable, resulting in an abnormal display of the OLED display panel.
  • the invention provides an OLED display panel to solve the influence of illumination on the thin film transistor layer in the existing OLED display panel.
  • the present invention provides an OLED display panel, wherein the OLED display panel includes:
  • An array substrate the array substrate includes a first substrate, a thin film transistor layer, and an OLED layer, the thin film transistor layer is formed on the first substrate, and the OLED layer is formed on the thin film transistor layer;
  • a color film cover plate is disposed opposite to the array substrate, the color film cover plate includes a second substrate and a color resist layer, and the color resist layer is formed on the second substrate,
  • the color resist layer includes:
  • the second color resisting region includes a first color resist and a second color resist, and the first color resist is formed on the second color resist;
  • the second color resistive region further includes a third color resist formed on the second color resist, and the third color resist is a red color resist block, a green color resist block, and a blue color resist One of the blocks, the first color resist, the second color resist, and the third color resist color block color are different;
  • a laminated member composed of the first color resist, the second color resist, and the third color resist serves to block light from being irradiated to the thin film transistor layer.
  • the first color resistance is one of a red color block, a green color block, and a blue color block
  • the second color resistance is a red color block and a green color block.
  • the block, the blue color block, is different from the other one of the first color resists.
  • the second color resistive region further includes a third color resist, the third color resist is formed on the second color resist, and the third color resist is a red color resist block.
  • the third color resist is a red color resist block.
  • One of a green color block and a blue color block; the first color resist, the second color resist, and the third color resist color block color are different;
  • a laminated member composed of the first color resist, the second color resist, and the third color resist serves to block light from being irradiated to the thin film transistor layer.
  • the OLED display panel further includes:
  • a passivation layer and a planarization layer the passivation layer and the planarization layer being between the OLED layer and the thin film transistor layer.
  • the OLED display panel further includes:
  • a cathode layer is formed on the OLED layer, the cathode layer being used to provide the electrons.
  • the anode layer, the OLED layer and the cathode layer together constitute an OLED device, and the OLED device is a top emission type OLED device.
  • the OLED device is a white light OLED device that emits white light.
  • the OLED layer comprises:
  • first common layer formed on the anode layer, the first common layer being used for injection and transport of the holes;
  • a second common layer is formed on the first common layer, the second common layer being used for injection and transmission of the electrons.
  • the first common layer includes a hole injection layer and a hole transport layer
  • the second common layer includes an electron injection layer and an electron transport layer
  • the second color resisting region further includes a light shielding block, and the light shielding block is made of a light shielding material.
  • the present invention provides an OLED display panel, wherein the OLED display panel includes:
  • An array substrate the array substrate includes a first substrate, a thin film transistor layer, and an OLED layer, the thin film transistor layer is formed on the first substrate, and the OLED layer is formed on the thin film transistor layer;
  • a color film cover plate is disposed opposite to the array substrate, the color film cover plate includes a second substrate and a color resist layer, and the color resist layer is formed on the second substrate,
  • the color resist layer includes:
  • the second color resisting region includes a first color resist and a second color resist, and the first color resist is formed on the second color resist.
  • the first color resistance is one of a red color block, a green color block, and a blue color block
  • the second color resistance is a red color block and a green color block.
  • the block, the blue color block, is different from the other one of the first color resists.
  • the OLED display panel further includes:
  • a passivation layer and a planarization layer the passivation layer and the planarization layer being between the OLED layer and the thin film transistor layer.
  • the OLED display panel further includes:
  • a cathode layer is formed on the OLED layer, the cathode layer being used to provide the electrons.
  • the anode layer, the OLED layer and the cathode layer together constitute an OLED device, and the OLED device is a top emission type OLED device.
  • the OLED device is a white light OLED device that emits white light.
  • the OLED layer comprises:
  • first common layer formed on the anode layer, the first common layer being used for injection and transport of the holes;
  • a second common layer is formed on the first common layer, the second common layer being used for injection and transmission of the electrons.
  • the first common layer includes a hole injection layer and a hole transport layer
  • the second common layer includes an electron injection layer and an electron transport layer
  • the second color resisting region further includes a light shielding block, and the light shielding block is made of a light shielding material.
  • two or three color resist blocks each having a different color are disposed in a second color resisting region corresponding to the thin film transistor, so that light rays cannot be irradiated to the thin film transistor when passing through the second color resisting region. Layer to improve the stability of the thin film transistor.
  • FIG. 1 is a structural view of a film layer of an OLED display panel in the prior art
  • FIG. 2 is a structural diagram of a film layer of an OLED display panel according to a preferred embodiment of the present invention.
  • FIG 3 is a structural diagram of a film layer of an OLED display panel according to a preferred embodiment of the present invention.
  • the OLED display panel includes an array substrate and a color film cover.
  • the array substrate includes a first substrate 201, a thin film transistor layer 202, and an OLED layer 203.
  • the thin film transistor layer 202 is formed on the first substrate 201, and the OLED layer 203 is formed on the thin film transistor layer. 202.
  • the material of the first substrate 201 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the thin film transistor includes an ESL (etch barrier type), a BCE (back channel etch type) or a Top-gate (top gate thin film transistor type) structure, and is not particularly limited; the present embodiment takes a back channel etch type structure as an example.
  • the thin film transistor includes a first metal layer, a gate insulating layer, an active layer, an ohmic contact layer, a second metal layer, and a passivation layer;
  • the metal material may generally be a metal such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, or a combination structure of the above-mentioned materials may be used.
  • the material of the gate insulating layer is silicon nitride, and silicon oxide, silicon oxynitride or the like may also be used;
  • the active layer is formed on the gate insulating layer, and the The source layer is an oxide semiconductor such as IGZO, ITZO, IGZTO, etc., and the active layer may be made of a carbon nanotube material;
  • the ohmic contact layer is formed on the active layer, and the ohmic contact layer is made of an electron doped n+ carbon nanotube solution; the ohmic contact layer is also called a doped layer because the active layer is weak n Forming a semiconductor material material, and directly contacting the material with the metal film will generate a Schottky barrier to deteriorate the electrical characteristics of the thin film transistor device, causing an abnormality in the light emission of the display panel; therefore, in the active layer and the place to be deposited Depositing an ohmic contact layer between the second metal layers to prevent the second metal layer from directly contacting the active layer;
  • the second metal layer is formed over the ohmic contact layer, and both the first metal layer and the second metal layer may be deposited by sputtering, in the embodiment, the second metal layer
  • the material of the first metal layer may be the same or different, and the metal material may generally be a metal such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, or a combination of the above-mentioned materials.
  • the second metal layer is formed by a first mask process to form a source and a drain of the thin film transistor;
  • the passivation layer 212 is formed on the second metal layer.
  • the passivation layer material is usually a tantalum nitride compound; the planarization layer 213 is formed on the passivation layer for the Flatness in thin film transistor process.
  • the OLED layer 203 is formed on the planar layer, and the anode layer 204, the OLED layer 203, and the cathode layer 205 together constitute an OLED device.
  • the OLED device is a top emission OLED.
  • the OLED device being a white light emitting white light OLED device;
  • the anode layer 204 is formed on the planar layer, and the anode layer 204 includes at least two anodes arranged in an array, the anode layer 204 is mainly used to provide holes for absorbing electrons, and the anode layer 204 is not Transparent light blocking layer;
  • the OLED layer 203 is formed on the anode layer 204, and the adjacent OLED layer 203 is separated by a pixel defining layer 206;
  • the OLED layer 203 includes a first common layer, a light emitting layer, and a second common layer, a common layer for injecting and transporting the holes, the first common layer including a hole injection layer and a hole transport layer, and thus, the first common layer may be referred to as a hole transport functional layer;
  • a second common layer formed on the first common layer, the first common layer being used for injection and transmission of the electrons, and the second common layer including an electron injection layer and an electron transport layer, and thus, the The second common layer may be referred to as an electron transport functional layer;
  • the light emitting layer is formed between the first common layer and the second common layer, and the light emitting layer is an organic semiconductor having a special energy band structure. After absorbing the electrons migrated from the anode, a photon of a certain wavelength can be emitted, and these photons
  • a cathode layer 205 is formed on the OLED layer 203, the cathode layer 205 is used to provide the electrons, and the cathode layer 205 in the present invention is a transparent material, and the light generated by the luminescent layer passes through the cathode layer 205. projection.
  • the color film cover is disposed opposite to the array substrate, and the color film cover comprises: a second substrate 207 and a color resist layer.
  • the second substrate 207 is the same as the material of the first substrate 201 in the array substrate, and both serve as a substrate;
  • a color resist layer is formed on the surface of the second substrate 207, the color resist layer includes a first color resistive region 208 and a second color resistive region 209, and the first color resistive region 208 corresponds to the OLED layer 203, such as As shown in FIG. 2, different OLED layers 203 correspond to different color block blocks, and the first color resistive region 208 includes at least one of a red color block, a green color block, and a blue color block;
  • the second color resistive region 209 corresponds to the thin film transistor layer 202, and the second color resistive region 209 includes a first color resist 210 and a second color resist 211, and the first color resist 210 is formed in the first
  • the first color resist 210 is one of a red color block, a green color block, and a blue color block
  • the second color resist 211 is a red color block and a green color resist.
  • Another one of the block and the blue color block is different from the first color resist 210; as shown in FIG. 2, in the embodiment, in order to better explain the specific embodiment, the method in the present embodiment
  • the first color resist 210 is a red color block
  • the second color resist 210 is a blue color block;
  • the thin film transistor layer 202 is entered, and the thin film transistor layer 202 receives the light.
  • the internal oxide semiconductor becomes unstable, affecting the stability of the thin film transistor layer 202, so that the OLED display panel displays an abnormality; and in the embodiment of the present invention, when the incident light passes through the first color resist 210, Preferably, the incident light outputs red light through the red color block, but when the red light enters the blue color block as incident light, no colored light is emitted from the blue color block, that is, the display panel is eliminated.
  • the thickness of the first color resist 210 and the thickness of the second color resist 210 need to be the same or similar.
  • the second color resistive region 309 further includes a third color resist 314, and the third color resist 314.
  • the third color resist 314 is one of a red color block, a green color block, and a blue color block, the first color 310 is blocked, and the second color
  • the color resists 311 and the color resist blocks of the third color resist 314 are different in color; in the embodiment, the first color resist 310 in the present embodiment is red for better description of the specific embodiment.
  • a color block, the second color resist 311 is a blue color block; the third color resist 314 is a green color block;
  • this embodiment is an improvement of the first embodiment.
  • a difference from the first color resist 310 and the second color resist 311 is added to the second color resist 311.
  • the third color resist 314 prevents a small amount of light from penetrating through the color block when the light passes through the first color resist 310 and the second color resist 311, and the increase of the third color resist 314 completely eliminates the thin film transistor 302 is affected by the light, but the thickness of the film layer on the side of the color film cover of the second embodiment is thicker than that of the first embodiment.
  • the second color resistive region further includes a light blocking block, that is, a third color resist is replaced with a black light blocking block, and the light blocking block may be made of a light shielding material, such as a black matrix.
  • the present invention provides an OLED display panel, wherein the OLED display panel includes an array substrate and a color film cover, the array substrate includes a first substrate, a thin film transistor layer, and an OLED layer; and the color film cover includes a second a substrate and a color resist layer, the color resist layer includes a first color resistive region and a second color resisting region, the first color resisting region corresponding to the OLED layer, the second color resisting region and the thin film transistor Corresponding to the layer, the second color resisting region includes two or three color resist blocks stacked with different colors; the present invention sets two or three colors by using a second color resisting region corresponding to the thin film transistor.
  • the color resist blocks are different from each other, so that when the light passes through the second color resistive region, the thin film transistor layer cannot be irradiated, and the stability of the thin film transistor is improved.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种OLED显示面板，包括阵列基板和彩膜盖板，阵列基板包括薄膜晶体管层（202）以及OLED层（203）；彩膜盖板包括色阻层，色阻层包括第一色阻区域（208）和第二色阻区域（209），第一色阻区域与OLED层对应，第二色阻区域与薄膜晶体管层对应，第二色阻区域包括两个或三个颜色各不相同叠加的色阻块。

Description

一种OLED显示面板 技术领域
本发明涉及平板显示器领域，特别涉及一种OLED显示面板。
 背景技术
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。相对于LCD(Liquid crystal displays，液晶显示器)，OLED具有更省电，更薄，且视角宽的优势，这是LCD无法比拟的。目前，人们对显示的细腻程度即分辨率要求越来越高，但生产高质量、高分辨率的OLED显示屏仍然面临着许多挑战。
图1所示为现有技术中一种OLED显示面板的膜层结构图，所述OLED显示面板包括阵列基板和彩膜盖板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层；所述彩膜盖板包括第二基板和色阻层，所述色阻层包括第一色阻区域和第二色阻区域，所述第一色阻区域与所述OLED层对应，所述第二色阻区域与所述薄膜晶体管对应，当第二色阻区域包括红色色阻块、绿色色阻块、蓝色色阻块中的一种，光线通过第二基板以及第二色阻区域进入所述薄膜晶体管层，而薄膜晶体管层都是氧化物半导体，受光线照射，使得薄膜晶体管不稳定，导致OLED显示面板显示异常。
 技术问题
本发明提供一种OLED显示面板，以解决现有OLED显示面板中光照对薄膜晶体管层的影响。
 技术解决方案
本发明提供一种OLED显示面板，其中，所述OLED显示面板包括：
阵列基板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层，所述薄膜晶体管层形成于所述第一基板上，所述OLED层形成于所述薄膜晶体管层上；
彩膜盖板，与所述阵列基板相对设置，所述彩膜盖板包括第二基板和色阻层，所述色阻层形成于所述第二基板上，
所述色阻层包括：
第一色阻区域，与所述OLED层对应；
第二色阻区域，与所述薄膜晶体管层对应，所述第二色阻区域包括第一色阻和第二色阻，所述第一色阻形成于所述第二色阻上；
所述第二色阻区域还包括第三色阻，所述第三色阻形成于所述第二色阻上，所述第三色阻为红色色阻块、绿色色阻块、蓝色色阻块中的一种，所述第一色阻、所述第二色阻以及所述第三色阻的色阻块颜色各不相同；
由所述第一色阻、所述第二色阻以及所述第三色阻组成的层叠构件用于阻挡光线照射到所述薄膜晶体管层。
根据本发明一优选实施例，所述第一色阻为红色色阻块、绿色色阻块、蓝色色阻块中的其中一种，所述第二色阻为红色色阻块、绿色色阻块、蓝色色阻块中不同于所述第一色阻的另一种。
根据本发明一优选实施例，所述第二色阻区域还包括第三色阻，所述第三色阻形成于所述第二色阻上，所述第三色阻为红色色阻块、绿色色阻块、蓝色色阻块中的一种，所述第一色阻、所述第二色阻以及所述第三色阻的色阻块颜色各不相同；
由所述第一色阻、所述第二色阻以及所述第三色阻组成的层叠构件用于阻挡光线照射到所述薄膜晶体管层。
根据本发明一优选实施例，所述OLED显示面板还包括：
钝化层和平坦层，所述钝化层和所述平坦层位于所述OLED层和所述薄膜晶体管层之间。
根据本发明一优选实施例，所述OLED显示面板还包括：
阳极层，形成于所述薄膜晶体管层上，所述阳极层包括至少两个成阵列排布的阳极，所述阳极层用于提供吸收电子的空穴；
阴极层，形成于所述OLED层上，所述阴极层用于提供所述电子。
根据本发明一优选实施例，所述阳极层、所述OLED层以及所述阴极层共同构成OLED器件，所述OLED器件为顶发射型OLED器件。
根据本发明一优选实施例，所述OLED器件为发射白光的白光OLED器件。
根据本发明一优选实施例，所述OLED层包括：
第一公共层，形成于所述阳极层上，所述第一公共层用于所述空穴的注入和传输；
发光层，形成于所述第一公共层上；
第二公共层，形成于所述第一公共层上，所述第二公共层用于所述电子的注入和传输。
根据本发明一优选实施例，所述第一公共层包括空穴注入层和空穴传输层，所述第二公共层包括电子注入层和电子传输层。
根据本发明一优选实施例，所述第二色阻区域还包括遮光块，所述遮光块由遮光材料制成。
本发明提供一种OLED显示面板，其中，所述OLED显示面板包括：
阵列基板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层，所述薄膜晶体管层形成于所述第一基板上，所述OLED层形成于所述薄膜晶体管层上；
彩膜盖板，与所述阵列基板相对设置，所述彩膜盖板包括第二基板和色阻层，所述色阻层形成于所述第二基板上，
所述色阻层包括：
第一色阻区域，与所述OLED层对应；
第二色阻区域，与所述薄膜晶体管层对应，所述第二色阻区域包括第一色阻和第二色阻，所述第一色阻形成于所述第二色阻上。
根据本发明一优选实施例，所述第一色阻为红色色阻块、绿色色阻块、蓝色色阻块中的其中一种，所述第二色阻为红色色阻块、绿色色阻块、蓝色色阻块中不同于所述第一色阻的另一种。
根据本发明一优选实施例，所述OLED显示面板还包括：
钝化层和平坦层，所述钝化层和所述平坦层位于所述OLED层和所述薄膜晶体管层之间。
根据本发明一优选实施例，所述OLED显示面板还包括：
阳极层，形成于所述薄膜晶体管层上，所述阳极层包括至少两个成阵列排布的阳极，所述阳极层用于提供吸收电子的空穴；
阴极层，形成于所述OLED层上，所述阴极层用于提供所述电子。
根据本发明一优选实施例，所述阳极层、所述OLED层以及所述阴极层共同构成OLED器件，所述OLED器件为顶发射型OLED器件。
根据本发明一优选实施例，所述OLED器件为发射白光的白光OLED器件。
根据本发明一优选实施例，所述OLED层包括：
第一公共层，形成于所述阳极层上，所述第一公共层用于所述空穴的注入和传输；
发光层，形成于所述第一公共层上；
第二公共层，形成于所述第一公共层上，所述第二公共层用于所述电子的注入和传输。
根据本发明一优选实施例，所述第一公共层包括空穴注入层和空穴传输层，所述第二公共层包括电子注入层和电子传输层。
根据本发明一优选实施例，所述第二色阻区域还包括遮光块，所述遮光块由遮光材料制成。
 有益效果
本发明通过在与所述薄膜晶体管对应的第二色阻区域设置两个或三个颜色各不相同的色阻块，使得光线经过所述第二色阻区域时，无法照射到所述薄膜晶体管层，提高薄膜晶体管的稳定性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中一种OLED显示面板的膜层结构图；
图2为本发明优选实施例一一种OLED显示面板的膜层结构图；
图3为本发明优选实施例二一种OLED显示面板的膜层结构图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
图2为本发明优选实施例一一种OLED显示面板的膜层结构图，所述OLED显示面板包括：阵列基板和彩膜盖板。
阵列基板，所述阵列基板包括第一基板201、薄膜晶体管层202以及OLED层203，所述薄膜晶体管层202形成于所述第一基板201上，所述OLED层203形成于所述薄膜晶体管层202上。
所述第一基板201的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
所述薄膜晶体管包括ESL（蚀刻阻挡层型）、BCE（背沟道蚀刻型）或Top-gate（顶栅薄膜晶体管型）结构，具体没有限制；本实施例以背沟道蚀刻型结构为例进行说明，所述薄膜晶体管包括第一金属层、栅绝缘层、有源层、欧姆接触层、第二金属层以及钝化层；
所述第一基板201上沉积第一金属层，金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种材料薄膜的组合结构，所述第一金属层经第一光罩制程工艺，在所述第一基板201上形成所述薄膜晶体管的栅极与栅线；所述栅绝缘层将所述第一金属层和所述第一基板201覆盖，在本实施例中，所述栅绝缘层的材料为氮化硅，也可以使用氧化硅和氮氧化硅等；所述有源层形成于所述栅绝缘层上，所述有源层为氧化物半导体，例如IGZO，ITZO，IGZTO等等，所述有源层可以由碳纳米管材料制成；
所述欧姆接触层形成于所述有源层上，所述欧姆接触层采用电子掺杂n+的碳纳米管溶液制成；所述欧姆接触层也叫做掺杂层，因为有源层是弱n型半导体材料材料构成，而此种材料直接与金属薄膜接触将产生肖特基势垒而劣化薄膜晶体管器件的电学特性，使得显示面板的发光产生异常；因此，在有源层与即将沉积的所述第二金属层之间预先沉积一欧姆接触层，阻止所述第二金属层与所述有源层直接接触；
所述第二金属层形成于所述欧姆接触层上方，所述第一金属层和所述第二金属层都可以溅射的方法沉积金属层，在本实施例中，所述第二金属层的材料与所述第一金属层的材料可以相同或不同，金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种材料薄膜的组合结构；所述第二金属层经第一光罩制程工艺形成所述薄膜晶体管的源漏极；
所述钝化层212形成于所述第二金属层上，优选的，所述钝化层材料通常为氮化矽化合物；所述平坦层213形成于所述钝化层上，用于所述薄膜晶体管工艺上的平整性。
所述OLED层203形成于所述平坦层上，所述阳极层204、所述OLED层203以及所述阴极层205共同构成OLED器件，在本实施例中，所述OLED器件为顶发射型OLED器件，所述OLED器件为发射白光的白光OLED器件；
所述阳极层204形成于所述平坦层上，所述阳极层204包括至少两个成阵列排布的阳极，所述阳极层204主要用于提供吸收电子的空穴，所述阳极层204非透明的挡光层；
所述OLED层203形成于所述阳极层204上，相邻的OLED层203被像素定义层所分离206；所述OLED层203包括第一公共层、发光层以及第二公共层，所述第一公共层用于所述空穴的注入和传输，所述第一公共层包括空穴注入层和空穴传输层，因此，所述第一公共层可以称为空穴传输功能层；所述第二公共层形成于所述第一公共层上，所述第一公共层用于所述电子的注入和传输，所述第二公共层包括电子注入层和电子传输层，因此，所述第二公共层可以称为电子传输功能层；所述发光层位于形成于所述第一公共层和所述第二公共层之间，所述发光层为有机物半导体，其具有特殊的能带结构，可以在吸收所述阳极迁移过来的电子后，再散发出来一定波长的光子，而这些光子进入我们眼睛就是我们看到的色彩；
阴极层205，形成于所述OLED层203上，所述阴极层205用于提供所述电子，本发明中的阴极层205为透明材料，让发光层产生的光线经过所述阴极层205向外投射。
彩膜盖板，与所述阵列基板相对设置，所述彩膜盖板包括：第二基板207和色阻层。
所述第二基板207与所述阵列基板中的所述第一基板201的材质相同，均作为衬底基板；
色阻层形成于所述第二基板207表面，所述色阻层包括第一色阻区域208和第二色阻区域209，所述第一色阻区域208与所述OLED层203对应，如图2所示，不同的OLED层203对应不同的色阻块，第一色阻区域208包括红色色阻块、绿色色阻块、蓝色色阻块中的至少一种；
所述第二色阻区域209与所述薄膜晶体管层202对应，所述第二色阻区域209包括第一色阻210和第二色阻211，所述第一色阻210形成于所述第二色阻211上，所述第一色阻210为红色色阻块、绿色色阻块、蓝色色阻块中的其中一种，所述第二色阻211为红色色阻块、绿色色阻块、蓝色色阻块中不同于所述第一色阻210的另一种；如图2所示，在本实施例中，为了更好的对具体实施例进行说明，本方案中的所述第一色阻210为红色色阻块，所述第二色阻210为蓝色色阻块；
如图2所示，当外界光源经过第二基板207，或者OLED层203中发光层所发出的光线在面板内部经过反射或折射等，进入薄膜晶体管层202，薄膜晶体管层202收到光照的影响，内部的氧化物半导体变得不再稳定，影响薄膜晶体管层202的稳定性，使得该OLED显示面板显示异常；而在本发明实施例中，当入射光通过所述第一色阻210时，优选的，入射光经红色色阻块输出红色光线，但当所述红色光线再次作为入射光进入蓝色色阻块时，不会有有色光线从蓝色色阻块中射出，即消除了显示面板中非显示区域出现漏红色光线的技术问题；但是达到这种效果，所述第一色阻210的厚度和所述第二色阻210的厚度需要相同或相近。
图3为本发明优选实施例二一种OLED显示面板的膜层结构图，从图中可以看出，所述第二色阻区域309还包括第三色阻314，所述第三色阻314形成于所述第二色阻311上，所述第三色阻314为红色色阻块、绿色色阻块、蓝色色阻块中的一种，所述第一色310阻、所述第二色阻311以及所述第三色阻314的色阻块颜色各不相同；在本实施例中，为了更好的对具体实施例进行说明，本方案中的所述第一色阻310为红色色阻块，所述第二色阻311为蓝色色阻块；所述第三色阻314为绿色色阻块；
如图3所示，本实施例为实施例一的改进，在原有的两色阻的基础上，在第二色阻311的基础上增加不同于第一色阻310和第二色阻311的第三色阻314，防止当光线经过第一色阻310和第二色阻311时，还有少部分光线从色阻块中穿透，第三色阻314的增加彻底杜绝了所述薄膜晶体管302受到光照的影响，但实施例二彩膜盖板侧的膜层厚度较实施例一厚。
另外，所述第二色阻区域还包括遮光块，即将第三色阻替换成黑色遮光块，所述遮光块可以由遮光材料制成，例如黑色矩阵。
本发明提供一种OLED显示面板，其中，所述OLED显示面板包括阵列基板和彩膜盖板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层；所述彩膜盖板包括第二基板和色阻层，所述色阻层包括第一色阻区域和第二色阻区域，所述第一色阻区域与所述OLED层对应，所述第二色阻区域与所述薄膜晶体管层对应，所述第二色阻区域包括两个或三个颜色各不相同叠加的色阻块；本发明通过在与所述薄膜晶体管对应的第二色阻区域设置两个或三个颜色各不相同的色阻块，使得光线经过所述第二色阻区域时，无法照射到所述薄膜晶体管层，提高薄膜晶体管的稳定性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种OLED显示面板，其包括：
    阵列基板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层，所述薄膜晶体管层形成于所述第一基板上，所述OLED层形成于所述薄膜晶体管层上；
    彩膜盖板，与所述阵列基板相对设置，所述彩膜盖板包括第二基板和色阻层，所述色阻层形成于所述第二基板上，
    所述色阻层包括：
    第一色阻区域，与所述OLED层对应；
    第二色阻区域，与所述薄膜晶体管层对应，所述第二色阻区域包括第一色阻和第二色阻，所述第一色阻形成于所述第二色阻上；
    所述第二色阻区域还包括第三色阻，所述第三色阻形成于所述第二色阻上，所述第三色阻为红色色阻块、绿色色阻块、蓝色色阻块中的一种，所述第一色阻、所述第二色阻以及所述第三色阻的色阻块颜色各不相同；
    由所述第一色阻、所述第二色阻以及所述第三色阻组成的层叠构件用于阻挡光线照射到所述薄膜晶体管层。
  2. 根据权利要求1所述OLED显示面板，其中，所述第一色阻为红色色阻块、绿色色阻块、蓝色色阻块中的其中一种，所述第二色阻为红色色阻块、绿色色阻块、蓝色色阻块中不同于所述第一色阻的另一种。
  3. 根据权利要求1所述OLED显示面板，其中，所述OLED显示面板还包括：
    钝化层和平坦层，所述钝化层和所述平坦层位于所述OLED层和所述薄膜晶体管层之间。
  4. 根据权利要求1所述OLED显示面板，其中，所述OLED显示面板还包括：
    阳极层，形成于所述薄膜晶体管层上，所述阳极层包括至少两个成阵列排布的阳极，所述阳极层用于提供吸收电子的空穴；
    阴极层，形成于所述OLED层上，所述阴极层用于提供所述电子。
  5. 根据权利要求4所述OLED显示面板，其中，所述阳极层、所述OLED层以及所述阴极层共同构成OLED器件，所述OLED器件为顶发射型OLED器件。
  6. 根据权利要求5所述OLED显示面板，其中，所述OLED器件为发射白光的白光OLED器件。
  7. 根据权利要求5所述OLED显示面板，其中，所述OLED层包括：
    第一公共层，形成于所述阳极层上，所述第一公共层用于所述空穴的注入和传输；
    发光层，形成于所述第一公共层上；
    第二公共层，形成于所述第一公共层上，所述第二公共层用于所述电子的注入和传输。
  8. 根据权利要求7所述的OLED显示面板，其中，所述第一公共层包括空穴注入层和空穴传输层，所述第二公共层包括电子注入层和电子传输层。
  9. 根据权利要求1所述的OLED显示面板，其中，所述第二色阻区域还包括遮光块，所述遮光块由遮光材料制成。
  10. 一种OLED显示面板，其包括：
    阵列基板，所述阵列基板包括第一基板、薄膜晶体管层以及OLED层，所述薄膜晶体管层形成于所述第一基板上，所述OLED层形成于所述薄膜晶体管层上；
    彩膜盖板，与所述阵列基板相对设置，所述彩膜盖板包括第二基板和色阻层，所述色阻层形成于所述第二基板上，
    所述色阻层包括：
    第一色阻区域，与所述OLED层对应；
    第二色阻区域，与所述薄膜晶体管层对应，所述第二色阻区域包括第一色阻和第二色阻，所述第一色阻形成于所述第二色阻上。
  11. 根据权利要求10所述OLED显示面板，其中，所述第一色阻为红色色阻块、绿色色阻块、蓝色色阻块中的其中一种，所述第二色阻为红色色阻块、绿色色阻块、蓝色色阻块中不同于所述第一色阻的另一种。
  12. 根据权利要求10所述OLED显示面板，其中，所述OLED显示面板还包括：
    钝化层和平坦层，所述钝化层和所述平坦层位于所述OLED层和所述薄膜晶体管层之间。
  13. 根据权利要求10所述OLED显示面板，其中，所述OLED显示面板还包括：
    阳极层，形成于所述薄膜晶体管层上，所述阳极层包括至少两个成阵列排布的阳极，所述阳极层用于提供吸收电子的空穴；
    阴极层，形成于所述OLED层上，所述阴极层用于提供所述电子。
  14. 根据权利要求13所述OLED显示面板，其中，所述阳极层、所述OLED层以及所述阴极层共同构成OLED器件，所述OLED器件为顶发射型OLED器件。
  15. 根据权利要求14所述OLED显示面板，其中，所述OLED器件为发射白光的白光OLED器件。
  16. 根据权利要求14所述OLED显示面板，其中，所述OLED层包括：
    第一公共层，形成于所述阳极层上，所述第一公共层用于所述空穴的注入和传输；
    发光层，形成于所述第一公共层上；
    第二公共层，形成于所述第一公共层上，所述第二公共层用于所述电子的注入和传输。
  17. 根据权利要求16所述的OLED显示面板，其中，所述第一公共层包括空穴注入层和空穴传输层，所述第二公共层包括电子注入层和电子传输层。
  18. 根据权利要求10所述的OLED显示面板，其中，所述第二色阻区域还包括遮光块，所述遮光块由遮光材料制成。
PCT/CN2018/078491 2018-02-08 2018-03-09 一种oled显示面板 WO2019153401A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/767,353 US20190245022A1 (en) 2018-02-08 2018-03-09 Oled display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810126817.1 2018-02-08
CN201810126817.1A CN108364985A (zh) 2018-02-08 2018-02-08 一种oled显示面板

Publications (1)

Publication Number Publication Date
WO2019153401A1 true WO2019153401A1 (zh) 2019-08-15

Family

ID=63005303

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/078491 WO2019153401A1 (zh) 2018-02-08 2018-03-09 一种oled显示面板

Country Status (2)

Country Link
CN (1) CN108364985A (zh)
WO (1) WO2019153401A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560208A (zh) * 2018-12-12 2019-04-02 惠科股份有限公司 发光器件及显示装置
CN114647109A (zh) * 2022-03-30 2022-06-21 Tcl华星光电技术有限公司 液晶显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000661A (zh) * 2012-12-12 2013-03-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN103744139A (zh) * 2013-12-27 2014-04-23 京东方科技集团股份有限公司 彩膜层制作方法
CN106773241A (zh) * 2016-12-20 2017-05-31 武汉华星光电技术有限公司 液晶面板及液晶显示器
CN107479246A (zh) * 2017-09-15 2017-12-15 深圳市华星光电半导体显示技术有限公司 彩膜基板的制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000591B1 (ko) * 2013-06-21 2019-07-16 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법
US9431463B2 (en) * 2014-04-30 2016-08-30 Lg Display Co., Ltd. Display apparatus
CN105607368B (zh) * 2016-01-04 2020-02-07 重庆京东方光电科技有限公司 阵列基板及其制备方法、显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000661A (zh) * 2012-12-12 2013-03-27 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN103744139A (zh) * 2013-12-27 2014-04-23 京东方科技集团股份有限公司 彩膜层制作方法
CN106773241A (zh) * 2016-12-20 2017-05-31 武汉华星光电技术有限公司 液晶面板及液晶显示器
CN107479246A (zh) * 2017-09-15 2017-12-15 深圳市华星光电半导体显示技术有限公司 彩膜基板的制作方法

Also Published As

Publication number Publication date
CN108364985A (zh) 2018-08-03

Similar Documents

Publication Publication Date Title
CN108172600B (zh) 用于woled显示器的彩膜基板及woled显示器
KR102328494B1 (ko) Oled 디스플레이 패널 및 이의 제조 방법
WO2020206721A1 (zh) 显示面板及制作方法、显示模组
WO2020199445A1 (zh) 一种oled显示器件及其制备方法
TWI595640B (zh) 有機發光二極體裝置
US8253322B2 (en) Organic light emitting display device including light absorption pattern unit
US10170526B1 (en) Organic light emitting diode display panel and method for manufacturing same
US8421345B2 (en) Electroluminescent device including white color filter pattern having blue light transmittance greater than red and green light transmittance
KR20180071538A (ko) 표시 장치용 기판과 그를 포함하는 표시 장치
WO2019127801A1 (zh) 显示面板及其制作方法
KR101580827B1 (ko) 유기전계발광소자 및 이의 제조방법
WO2016095335A1 (zh) Oled显示装置及其制造方法
US20130302923A1 (en) Method for manufacturing an active matrix organic light emitting diode
WO2021238129A1 (zh) 显示面板及显示面板制作方法
KR20070063131A (ko) 유기 전계 발광 표시 장치 및 이의 제조 방법
US9443916B2 (en) Organic light emitting display device and method for manufacturing the same
KR20030084234A (ko) 듀얼패널타입 유기전계발광 소자 및 그의 제조방법
KR102016070B1 (ko) 플렉서블 유기전계 발광소자 및 그의 제조방법
US10396133B2 (en) Two-way organic light emitting diode display device
CN110429126B (zh) 显示面板和显示装置
KR20150038982A (ko) 유기발광표시장치 및 그의 제조방법
WO2022017027A1 (zh) 可拉伸显示面板及其制作方法
WO2018086210A1 (zh) Tft基板及其制作方法
WO2020259273A1 (zh) 薄膜晶体管及其制备方法、显示基板、显示装置
US20220006042A1 (en) Display panel and manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18905248

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18905248

Country of ref document: EP

Kind code of ref document: A1