WO2019136820A1 - 一种喷墨打印的oled显示面板及其制备方法 - Google Patents

一种喷墨打印的oled显示面板及其制备方法 Download PDF

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WO2019136820A1
WO2019136820A1 PCT/CN2018/079002 CN2018079002W WO2019136820A1 WO 2019136820 A1 WO2019136820 A1 WO 2019136820A1 CN 2018079002 W CN2018079002 W CN 2018079002W WO 2019136820 A1 WO2019136820 A1 WO 2019136820A1
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layer
pair
anodes
pixel defining
display panel
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PCT/CN2018/079002
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English (en)
French (fr)
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刘方梅
刘兆松
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/009,614 priority Critical patent/US10756148B2/en
Publication of WO2019136820A1 publication Critical patent/WO2019136820A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an inkjet printed OLED display panel and a method of fabricating the same.
  • an OLED display panel is prepared by an IJP (ink-jet printing) process, and the OLED display panel is called an inkjet printed OLED. Display panel.
  • IJP ink-jet printing
  • a 2inl pixel structure is designed. As shown in Fig. 1, one pixel 10' of the inkjet printed OLED display panel includes two sub-pixels 101'. On the one hand, this kind of design can make more efficient use of space and improve resolution; on the other hand, two sub-pixels can be produced by one printing, which can improve the preparation efficiency of sub-pixels.
  • an SiO process is introduced as an electrode isolation layer outside the array substrate process, and an SiO layer is first deposited between the anodes, and a pattern of the SiO layer is defined as an electrode isolation layer by using a photomask.
  • the two anodes 5' and the light-emitting layers 8' above the two anodes 5' together constitute two sub-pixels 101', and between the two anodes 5' are provided with electrode isolation layers 6', 9'
  • the cathodes, 1', 2', 3', 4', 7' are respectively a thin film transistor, a substrate, a passivation layer, a flat layer, and a pixel defining layer. It has been verified that the SiO process causes degradation of the thin film transistor device.
  • the present invention provides an inkjet printed OLED display panel and a preparation method thereof, which can save a photomask, and can also improve the performance of a thin film transistor in an inkjet printed OLED display panel without lowering the thin film transistor.
  • the mobility can also effectively suppress threshold voltage drift.
  • the invention provides a method for preparing an inkjet printed OLED display panel, comprising the following steps:
  • a luminescent layer is prepared in the indentation of the pixel defining layer using an inkjet printing technique, and the luminescent layer covers a pixel defining layer between the at least one pair of anodes.
  • the method further comprises the steps of:
  • a cathode is prepared over the luminescent layer.
  • the halftone mask is disposed above the pixel defining layer, and a semi-transmissive region of the halftone mask is located above a pixel defining layer between the at least one pair of anodes, the halftone light A light transmissive region of the cover is positioned over the at least one pair of anodes, and a pattern of the pixel definition layer is defined by yellow light through the halftone mask.
  • the passivation layer comprises at least one layer of SiOx and / or at least one layer of SiNx, and the passivation layer has a thickness ranging from 1000 to 5000 angstroms;
  • the planarization layer comprises a photoresist layer of at least one component, and the planarization layer comprises at least one photoresist layer having a thickness ranging from 10,000 to 20,000 angstroms.
  • preparing at least one pair of anodes on the planar layer comprises the steps of:
  • the pixel defining layer comprises a photoresist layer of at least one component, and the pixel defining layer comprises at least one photoresist layer, and the pixel defining layer on both sides of the at least one pair of anodes has a thickness ranging from 10000 ⁇ 20000 Amy.
  • the at least one pair of via holes are formed on the passivation layer and the planar layer using yellow light.
  • the invention also provides a method for preparing an inkjet printed OLED display panel, comprising the following steps:
  • a cathode is prepared over the luminescent layer.
  • the halftone mask is disposed above the pixel defining layer, and a semi-transmissive region of the halftone mask is located above a pixel defining layer between the at least one pair of anodes, the halftone light A light transmissive region of the cover is positioned over the at least one pair of anodes, and a pattern of the pixel definition layer is defined by yellow light through the halftone mask.
  • the passivation layer comprises at least one layer of SiOx and / or at least one layer of SiNx, and the passivation layer has a thickness ranging from 1000 to 5000 angstroms;
  • the planarization layer comprises a photoresist layer of at least one component, and the planarization layer comprises at least one photoresist layer, the planarization layer having a thickness ranging from 10,000 to 20,000 angstroms.
  • preparing at least one pair of anodes on the planar layer comprises the steps of:
  • anode has a thickness ranging from 500 to 1000 angstroms.
  • the pixel defining layer comprises a photoresist layer of at least one component, and the pixel defining layer comprises at least one photoresist layer, and the pixel defining layer on both sides of the at least one pair of anodes has a thickness ranging from 10000 ⁇ 20000 Amy.
  • the at least one pair of via holes are formed on the passivation layer and the planar layer using yellow light.
  • the present invention also provides an inkjet printed OLED display panel comprising: at least one pair of thin film transistors and a passivation layer and a planarization layer which are sequentially stacked over the at least one pair of thin film transistors, the passivation layer and the At least one pair of via holes are disposed on the planar layer, and the via holes on the passivation layer are opposite to the via holes on the flat layer and are located above the thin film transistor, and at least one of the flat layers is disposed on the flat layer An anode, and the at least one pair of anodes are electrically connected to the thin film transistor through a via of the flat layer and a via of the passivation layer;
  • a pixel defining layer is disposed on the flat layer, the pixel defining layer includes at least one pair of notches, and the at least one pair of notches are respectively located above the at least one pair of anodes, and the pixel defining layer between the at least one pair of anodes a height that is less than a height of a pixel defining layer on both sides of the at least one pair of anodes;
  • a light emitting layer is disposed in the at least one pair of notches, and the light emitting layer covers a pixel defining layer between the at least one pair of anodes.
  • a cathode is disposed above the luminescent layer.
  • the passivation layer comprises at least one layer of SiOx and / or at least one layer of SiNx, and the passivation layer has a thickness ranging from 1000 to 5000 angstroms;
  • the flat layer comprises a photoresist layer of at least one component, and the flat layer comprises at least one photoresist layer, the flat layer having a thickness ranging from 10,000 to 20,000 angstroms;
  • the pixel defining layer comprises a photoresist layer of at least one component, and the pixel defining layer comprises at least one photoresist layer, and the pixel defining layer on both sides of the at least one pair of anodes has a thickness ranging from 10,000 to 20,000 angstroms .
  • the present invention forms a via on the passivation layer and the planarization layer after preparing a passivation layer and a planarization layer over the thin film transistor, and prepares the anode on the flat layer, the anode passes through the flat layer and is blunt
  • the via holes on the layer are electrically connected to the thin film transistor, the pixel defining layer is covered on the flat layer to cover the anode, and the pattern of the pixel defining layer is defined by the halftone mask, so that the pixel defining layer above the anode forms a gap to prepare the light emitting layer.
  • the height of the pixel defining layer between the anodes is lowered to serve as an electrode spacer layer between the anodes.
  • the present invention when defining the pixel definition layer pattern, directly prepares the electrode spacer layer between the anodes without separately preparing the electrode spacer layer, and does not need to deposit an SiO layer between the anodes and use light.
  • the cover defines a pattern of the SiO layer; thus, the present invention can save a photomask relative to the existing inkjet printed OLED display panel manufacturing method, saving the preparation time and cost of the inkjet printed OLED display panel.
  • the material of the pixel defining layer is used instead of the SiO material, and the material of the pixel defining layer does not contain hydrogen bonds and hydrogen ions like the SiO material, and does not reduce the mobility of the thin film transistor. It is also possible to effectively suppress the threshold voltage drift, and thus does not cause deterioration of the thin film transistor in the inkjet printed OLED display panel.
  • FIG. 1 is a schematic view showing the structure of a pixel in an inkjet printed OLED display panel provided by the present invention.
  • FIG. 2 is a cross-sectional view of a pixel provided by the present invention.
  • FIG 3 is a schematic view showing formation of a passivation layer and a planarization layer on a thin film transistor provided by the present invention.
  • FIG. 4 is a schematic illustration of the preparation of a pair of anodes on a flat layer provided by the present invention.
  • Figure 5 is a schematic illustration of the deposition of a pixel definition layer on a planar layer provided by the present invention.
  • Figure 6 is a schematic illustration of a pattern defining a pixel definition layer of Figure 5 using a halftone mask provided by the present invention.
  • FIG. 7 is a schematic diagram of a graphic defining a pixel defining layer in FIG. 5 provided by the present invention.
  • Figure 8 is a cross-sectional view of a pixel in an ink jet printed OLED display panel provided by the present invention.
  • the invention provides a method for preparing an inkjet printed OLED display panel, the preparation method comprising the following steps:
  • At least a pair of thin film transistors 1 are prepared on the glass substrate 2;
  • At least one pair of via holes are formed on the passivation layer 3 and the flat layer 4, and the via holes 31 on the passivation layer 3 are opposite to the via holes 41 on the flat layer 4 and the via holes 31 on the passivation layer 3 are
  • the via holes 41 on the planar layer 4 are all located above the at least one pair of thin film transistors 1;
  • At least one pair of anodes 5 are prepared on the flat layer 4, and at least one pair of anodes 5 pass through the via holes 41 on the flat layer 4 and the via holes 31 on the passivation layer 3 and at least one pair of thin film transistors 1 Electrical connection.
  • a pixel defining layer 6 is deposited on the flat layer 4, and the pixel defining layer 6 covers at least one pair of anodes 5.
  • the pattern of the pixel defining layer 6 is defined by the half tone mask 7 shown in FIG. 6, as shown in FIG. 7, such that the pixel defining layer 6 is located at a region above the at least one pair of anodes 5 to form a notch 62 through the notch 62. At least one pair of anodes 5 are exposed, and the height of the pixel defining layer 61 between at least one pair of anodes 5 is reduced.
  • the light-emitting layer 8 is prepared in the notch 62 of the pixel defining layer by an inkjet printing technique, and the light-emitting layer 8 covers the pixel defining layer 61 between at least one pair of anodes 5.
  • the pattern of the pixel defining layer 6 is defined.
  • the photoresist is coated on the pixel defining layer 6, and the halftone mask 7 is placed above the pixel defining layer 6, and then yellow is used.
  • the light is exposed and developed through the halftone mask 7 to the photoresist layer on the surface of the pixel defining layer 6, and the pixel defining layer 6 is etched by using the exposed and developed photoresist layer as a barrier layer.
  • the thickness of the pixel defining layer 61 between at least one pair of anodes 5 can be adjusted by adjusting the exposure amount of the yellow light.
  • the method for preparing an inkjet printed OLED display panel further comprises the following steps:
  • a cathode 9 is prepared over the luminescent layer 8.
  • the halftone mask 7 when used to define the pattern of the pixel defining layer, the halftone mask 7 is disposed above the pixel defining layer, and the semi-transmissive region 71 of the halftone mask 7 is located at least between the pair of anodes 5. Above the pixel defining layer 6, the light transmissive region 72 of the halftone mask 7 is positioned above at least one pair of anodes 5, and the pattern of the pixel defining layer is defined by the yellow light through the halftone mask 7. As shown in FIG. 6, the area other than the semi-transmissive region 71 and the light-transmitting region 72 on the halftone mask 7 is the opaque region 73.
  • the passivation layer 3 comprises at least one layer of SiOx and/or at least one layer of SiNx, and the passivation layer 3 has a thickness in the range of 1000 to 5000 angstroms, x>1.
  • the flat layer 4 comprises a photoresist layer of at least one component, and the planar layer 4 comprises at least one photoresist layer, the flat layer 4 having a thickness ranging from 10,000 to 20,000 angstroms.
  • preparing at least one pair of anodes 5 on the flat layer 4 comprises the steps of:
  • An ITO (indium tin oxide) material layer is deposited on the flat layer 4, and the ITO material layer is patterned by yellow light to obtain at least one pair of anodes 5; wherein the anode 5 has a thickness in the range of 500 to 1000 angstroms.
  • the pixel defining layer comprises a photoresist layer of at least one component, and the pixel defining layer comprises at least one photoresist layer, and the pixel defining layer 63 on both sides of the at least one pair of anodes 5 has a thickness ranging from 10,000 to 20,000 angstroms.
  • At least one pair of via holes are formed on the passivation layer 3 and the flat layer 4 by using yellow light.
  • a photoresist layer is first coated on the flat layer 4, and the photoresist layer is exposed and developed with yellow light, and the exposed and developed light is utilized.
  • the resist layer serves as a barrier layer to etch the passivation layer 3 and the flat layer 4 to form via holes.
  • the present invention also provides an inkjet printed OLED display panel, as shown in FIG. 8, the inkjet printed OLED display panel includes: at least one pair of thin film transistors 1 and bluntly stacked over at least one pair of thin film transistors 1
  • the layer 3 and the flat layer 4, the passivation layer 3 and the flat layer 4 are each provided with at least one pair of via holes, and the via holes 31 on the passivation layer 3 are opposite to the via holes 41 on the flat layer 4 and are located in the thin film transistor
  • at least one pair of anodes 5 are provided on the flat layer 4, and at least one pair of anodes 5 are electrically connected to the thin film transistor 1 through the via holes 41 of the flat layer 4 and the via holes 31 of the passivation layer 3.
  • the flat layer 4 is provided with a pixel defining layer 6 including at least one pair of notches 62 as shown in FIG. 7, at least one pair of notches 62 respectively located above at least one pair of anodes 5, at least between a pair of anodes 5
  • the height of the definition layer 61 is smaller than the height of the pixel definition layer 63 on both sides of at least one pair of anodes 5.
  • At least one pair of notches 62 is provided with a light-emitting layer 8, and the light-emitting layer 8 covers a pixel defining layer between at least one pair of anodes 5; and a cathode 9 is disposed above the light-emitting layer 8.
  • the passivation layer 3 comprises at least one layer of SiOx and/or at least one layer of SiNx, and the passivation layer 3 has a thickness ranging from 1000 to 5000 angstroms.
  • the flat layer 4 comprises a photoresist layer of at least one component, and the planar layer 4 comprises at least one photoresist layer, the flat layer 4 having a thickness ranging from 10,000 to 20,000 angstroms.
  • the pixel defining layer comprises a photoresist layer of at least one component, and the pixel defining layer comprises at least one photoresist layer, and the pixel defining layer 63 on both sides of the at least one pair of anodes 5 has a thickness ranging from 10,000 to 20,000 angstroms.
  • the present invention prepares the anode 5 on the flat layer 4 by forming the passivation layer 3 and the planarization layer 4 over the thin film transistor 1 after forming the via holes 31, 41 on the passivation layer 3 and the planarization layer 4.
  • the anode 5 is electrically connected to the thin film transistor 1 through the via holes 41, 31 on the flat layer 4 and the passivation layer 3, a pixel defining layer 6 is formed on the flat layer 4 to cover the anode 5, and a pixel defining layer is defined by the halftone mask 7.
  • the pattern of 6 is such that the pixel defining layer 6 above the anode 5 forms the notch 62 to prepare the light-emitting layer 8, while reducing the height of the pixel defining layer 61 between the anodes 5 to serve as an electrode spacer layer between the anodes 5. Therefore, when defining the pixel definition layer pattern, the present invention directly prepares the electrode spacer layer between the anodes without separately preparing the electrode spacer layer, and does not need to deposit an SiO layer between the anodes and use light.
  • the cover defines a pattern of the SiO layer; thus, the present invention can save a photomask relative to the existing inkjet printed OLED display panel manufacturing method, saving the preparation time and cost of the inkjet printed OLED display panel.
  • the material of the pixel defining layer is used instead of the SiO material, and the material of the pixel defining layer does not contain hydrogen bonds and hydrogen ions like the SiO material, and does not reduce the mobility of the thin film transistor. It is also possible to effectively suppress the threshold voltage drift, and thus does not cause deterioration of the thin film transistor in the inkjet printed OLED display panel.
  • the inkjet printed OLED display panel of the invention adopts inkjet printing technology, and can print two sub-pixels at a time, which can effectively improve the resolution of the inkjet printed OLED display panel and reduce the difficulty of the inkjet printing process.

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Abstract

一种喷墨打印的OLED显示面板及其制备方法，该方法包括：在制备有至少一对薄膜晶体管（1）的玻璃基板（2）上方依次形成钝化层（3）和平坦层（4），且钝化层（3）覆盖至少一对薄膜晶体管（1）；在钝化层（3）以及平坦层（4）上均形成至少一对过孔（31，41）；在平坦层上制备至少一对阳极（5），且阳极（5）通过平坦层（4）以及钝化层（3）上的过孔（31，41）与薄膜晶体管（1）电性连接；在平坦层（4）上沉积像素定义层（6）覆盖阳极（5）；采用半色调光罩（7）定义像素定义层（6）的图形，使得像素定义层（6）位于阳极（5）上方的区域形成缺口（62），且将阳极（5）之间的像素定义层（61）的高度减小；采用喷墨打印技术在缺口（62）中制备发光层（8）。该方法可以节省一道光罩，还可以改善喷墨打印的OLED显示面板中薄膜晶体管（1）的性能，不会降低薄膜晶体管（1）的迁移率，还可以有效抑制阈值电压漂移。

Description

一种喷墨打印的OLED显示面板及其制备方法
本申请要求于2018年1月9日提交中国专利局、申请号为201810020268.X、发明名称为“一种喷墨打印的OLED显示面板及其制备方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域，尤其涉及一种喷墨打印的OLED显示面板及其制备方法。
背景技术
在制备OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板时，采用IJP(ink-jet printing，喷墨打印)工艺制备OLED显示面板的像素，该种OLED显示面板称为喷墨打印的OLED显示面板。为了降低IJP工艺的难度，设计了一种2inl的像素结构，该种像素结构如图1所示，喷墨打印的OLED显示面板的一个像素10’包含2个亚像素101’。该种设计一方面可以更有效的利用空间，提高解析度；另一方面，采用一次打印可以完成2个亚像素的制作，可以提高亚像素的制备效率。
为了实现一次打印两个亚像素，在阵列基板制程之外引入了一道SiO制程作为电极隔离层，先在阳极之间沉积SiO层，再使用光罩定义SiO层的图形作为电极隔离层。如图2所示，两个阳极5’以及两个阳极5’上方的发光层8’共同构成两个亚像素101’，两个阳极5’之间设置有电极隔离层6’，9’为阴极，1’、2’、3’、4’、7’分别为薄膜晶体管、基板、钝化层、平坦层、像素界定层。经过验证，SiO制程会造成薄膜晶体管器件的劣化。
发明内容
为解决上述技术问题，本发明提供一种喷墨打印的OLED显示面板及其制备方法，可以节省一道光罩，还可以改善喷墨打印的OLED显示面板中薄 膜晶体管的性能，不会降低薄膜晶体管的迁移率，还可以有效抑制阈值电压漂移。
本发明提供的一种喷墨打印的OLED显示面板的制备方法，包括下述步骤：
在制备有至少一对薄膜晶体管的玻璃基板上方依次形成钝化层和平坦层，且所述钝化层覆盖所述至少一对薄膜晶体管；
在所述钝化层以及所述平坦层上均形成至少一对过孔；
在所述平坦层上制备至少一对阳极，且所述至少一对阳极通过所述平坦层上的过孔以及所述钝化层上的过孔与所述至少一对薄膜晶体管电性连接；
在所述平坦层上沉积像素定义层，且所述像素定义层覆盖所述至少一对阳极；
采用半色调光罩定义所述像素定义层的图形，使得所述像素定义层位于所述至少一对阳极上方的区域形成缺口，且将所述至少一对阳极之间的像素定义层的高度减小；
采用喷墨打印技术在所述像素定义层的缺口中制备发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层。
优选地，还包括下述步骤：
在所述发光层上方制备阴极。
优选地，采用半色调光罩定义所述像素定义层的图形时，
将所述半色调光罩设于所述像素定义层的上方，且所述半色调光罩的半透光区位于所述至少一对阳极之间的像素定义层的上方，所述半色调光罩的透光区位于所述至少一对阳极的上方，通过黄光透过所述半色调光罩定义所述像素定义层的图形。
优选地，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光阻层，所述平坦层的厚度范围为10000～20000埃米。
优选地，在所述平坦层上制备至少一对阳极，包括下述步骤：
在所述平坦层上沉积ITO材料层，利用黄光图形化所述ITO材料层，得 到所述至少一对阳极；其中，所述阳极的厚度范围为500～1000埃米。
优选地，所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
优选地，采用黄光在所述钝化层以及所述平坦层上均形成所述至少一对过孔。
本发明还提供一种喷墨打印的OLED显示面板的制备方法，包括下述步骤：
在制备有至少一对薄膜晶体管的玻璃基板上方依次形成钝化层和平坦层，且所述钝化层覆盖所述至少一对薄膜晶体管；
在所述钝化层以及所述平坦层上均形成至少一对过孔；
在所述平坦层上制备至少一对阳极，且所述至少一对阳极通过所述平坦层上的过孔以及所述钝化层上的过孔与所述至少一对薄膜晶体管电性连接；
在所述平坦层上沉积像素定义层，且所述像素定义层覆盖所述至少一对阳极；
采用半色调光罩定义所述像素定义层的图形，使得所述像素定义层位于所述至少一对阳极上方的区域形成缺口，且将所述至少一对阳极之间的像素定义层的高度减小；
采用喷墨打印技术在所述像素定义层的缺口中制备发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层；
在所述发光层上方制备阴极。
优选地，采用半色调光罩定义所述像素定义层的图形时，
将所述半色调光罩设于所述像素定义层的上方，且所述半色调光罩的半透光区位于所述至少一对阳极之间的像素定义层的上方，所述半色调光罩的透光区位于所述至少一对阳极的上方，通过黄光透过所述半色调光罩定义所述像素定义层的图形。
优选地，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光 阻层，所述平坦层的厚度范围为10000～20000埃米。
优选地，在所述平坦层上制备至少一对阳极，包括下述步骤：
在所述平坦层上沉积ITO材料层，利用黄光图形化所述ITO材料层，得到所述至少一对阳极；其中，所述阳极的厚度范围为500～1000埃米。
优选地，所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
优选地，采用黄光在所述钝化层以及所述平坦层上均形成所述至少一对过孔。
本发明还提供一种喷墨打印的OLED显示面板，包括：至少一对薄膜晶体管以及位于所述至少一对薄膜晶体管上方且依次层叠的钝化层和平坦层，所述钝化层和所述平坦层上均设有至少一对过孔，所述钝化层上的过孔与所述平坦层上的过孔正对且位于所述薄膜晶体管的上方，所述平坦层上设有至少一对阳极，且所述至少一对阳极通过所述平坦层的过孔以及所述钝化层的过孔与所述薄膜晶体管电性连接；
所述平坦层上设有像素定义层，所述像素定义层包含至少一对缺口，所述至少一对缺口分别位于所述至少一对阳极上方，所述至少一对阳极之间的像素定义层的高度小于所述至少一对阳极两侧的像素定义层的高度；
所述至少一对缺口中设有发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层。
优选地，所述发光层上方设有阴极。
优选地，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光阻层，所述平坦层的厚度范围为10000～20000埃米；
所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
实施本发明，具有如下有益效果：本发明通过在薄膜晶体管上方制备钝 化层和平坦层之后，在钝化层和平坦层上形成过孔，在平坦层上制备阳极，阳极通过平坦层和钝化层上的过孔与薄膜晶体管电性连接，在平坦层上制备像素定义层覆盖阳极，通过半色调光罩定义像素定义层的图形，使得阳极上方的像素定义层形成缺口以制备发光层，同时降低阳极之间的像素定义层的高度以便作为阳极之间的电极间隔层。因此，本发明在定义像素定义层图形的时候，就直接制备好阳极之间的电极间隔层，而不需要再单独制备电极间隔层，不需要在阳极之间再沉积一层SiO层并使用光罩定义SiO层的图形；因而，本发明相对于现有的喷墨打印的OLED显示面板的制备方法而言，可以节省一道光罩，节约喷墨打印的OLED显示面板的制备时间和成本。
并且，本发明中阳极之间的电极间隔层采用的像素定义层的材料，而不是SiO材料，像素定义层的材料不像SiO材料那样包含氢键和氢离子，不会降低薄膜晶体管的迁移率，还可以有效抑制阈值电压漂移，因而不会对喷墨打印的OLED显示面板中的薄膜晶体管造成劣化。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明提供的喷墨打印的OLED显示面板中的像素结构示意图。
图2是本发明提供的像素的剖面图。
图3是本发明提供的薄膜晶体管上形成钝化层和平坦层的示意图。
图4是本发明提供的平坦层上制备一对阳极的示意图。
图5是本发明提供的在平坦层上沉积像素定义层的示意图。
图6是本发明提供的采用半色调光罩定义图5中的像素定义层的图形的示意图。
图7是本发明提供的定义图5中的像素定义层的图形的示意图。
图8是本发明提供的喷墨打印的OLED显示面板中像素的剖面图。
具体实施方式
本发明提供一种喷墨打印的OLED显示面板的制备方法，该制备方法包 括下述步骤：
如图3所示，在玻璃基板2上制备至少一对薄膜晶体管1；
在玻璃基板2上沉积钝化层3，钝化层3覆盖至少一对薄膜晶体管1；
在钝化层3上沉积平坦层4；
在钝化层3以及平坦层4上均形成至少一对过孔，且钝化层3上的过孔31与平坦层4上的过孔41正对且钝化层3上的过孔31与平坦层4上的过孔41均位于至少一对薄膜晶体管1的上方；
如图4所示，在平坦层4上制备至少一对阳极5，且至少一对阳极5通过平坦层4上的过孔41以及钝化层3上的过孔31与至少一对薄膜晶体管1电性连接。
如图5所示，在平坦层4上沉积像素定义层6，且像素定义层6覆盖至少一对阳极5。
采用图6所示的半色调(half tone)光罩7定义像素定义层6的图形，如图7所示，使得像素定义层6位于至少一对阳极5上方的区域形成缺口62，通过缺口62将至少一对阳极5露出，且将至少一对阳极5之间的像素定义层61的高度减小。
如图8所示，采用喷墨打印技术在像素定义层的缺口62中制备发光层8，且发光层8覆盖至少一对阳极5之间的像素定义层61。
需要说明的是，本发明中定义像素定义层6的图形，一般而言，是先在像素定义层6上涂布光阻，将半色调光罩7置于像素定义层6上方，再采用黄光透过半色调光罩7对像素定义层6表面的光阻层进行曝光及显影处理，再利用曝光及显影处理的光阻层作为阻挡层，对像素定义层6进行刻蚀。这里，可以通过调整黄光的曝光量来调整至少一对阳极5之间的像素定义层61的厚度。
进一步地，喷墨打印的OLED显示面板的制备方法还包括下述步骤：
在发光层8上方制备阴极9。
进一步地，采用半色调光罩7定义像素定义层的图形时，将半色调光罩7设于像素定义层的上方，且半色调光罩7的半透光区71位于至少一对阳极5之间的像素定义层6的上方，半色调光罩7的透光区72位于至少一对阳极 5的上方，通过黄光透过半色调光罩7定义像素定义层的图形。如图6所示，半色调光罩7上除去半透光区71和透光区72之外的其他区域为不透光区73。
进一步地，钝化层3包含至少一层SiOx和/或至少一层SiNx，且钝化层3的厚度范围为1000～5000埃米，x＞1。
平坦层4包含至少一种成份的光阻层，且平坦层4包含至少一层光阻层，平坦层4的厚度范围为10000～20000埃米。
进一步地，在平坦层4上制备至少一对阳极5，包括下述步骤：
在平坦层4上沉积ITO(铟锡氧化物)材料层，利用黄光图形化ITO材料层，得到至少一对阳极5；其中，阳极5的厚度范围为500～1000埃米。
进一步地，像素定义层包含至少一种成份的光阻层，且像素定义层包含至少一层光阻层，至少一对阳极5两侧的像素定义层63的厚度范围为10000～20000埃米。
进一步地，采用黄光在钝化层3以及平坦层4上均形成至少一对过孔。
本发明中，在钝化层3和平坦层4上形成过孔时，先在平坦层4上涂布光阻层，再用黄光对光阻层进行曝光和显影，利用曝光和显影的光阻层作为阻挡层对钝化层3和平坦层4进行刻蚀，形成过孔。
本发明还提供一种喷墨打印的OLED显示面板，如图8所示，该喷墨打印的OLED显示面板包括：至少一对薄膜晶体管1以及位于至少一对薄膜晶体管1上方且依次层叠的钝化层3和平坦层4，钝化层3和平坦层4上均设有至少一对过孔，钝化层3上的过孔31与平坦层4上的过孔41正对且位于薄膜晶体管1的上方，平坦层4上设有至少一对阳极5，且至少一对阳极5通过平坦层4的过孔41以及钝化层3的过孔31与薄膜晶体管1电性连接。
平坦层4上设有像素定义层6，像素定义层6包含至少一对图7所示的缺口62，至少一对缺口62分别位于至少一对阳极5上方，至少一对阳极5之间的像素定义层61的高度小于至少一对阳极5两侧的像素定义层63的高度。
至少一对缺口62中设有发光层8，且发光层8覆盖至少一对阳极5之间的像素定义层；发光层8上方设有阴极9。
进一步地，钝化层3包含至少一层SiOx和/或至少一层SiNx，且钝化层3的厚度范围为1000～5000埃米。
平坦层4包含至少一种成份的光阻层，且平坦层4包含至少一层光阻层，平坦层4的厚度范围为10000～20000埃米。
像素定义层包含至少一种成份的光阻层，且像素定义层包含至少一层光阻层，至少一对阳极5两侧的像素定义层63的厚度范围为10000～20000埃米。
综上所述，本发明通过在薄膜晶体管1上方制备钝化层3和平坦层4之后，在钝化层3和平坦层4上形成过孔31、41，在平坦层4上制备阳极5，阳极5通过平坦层4和钝化层3上的过孔41、31与薄膜晶体管1电性连接，在平坦层4上制备像素定义层6覆盖阳极5，通过半色调光罩7定义像素定义层6的图形，使得阳极5上方的像素定义层6形成缺口62以制备发光层8，同时降低阳极5之间的像素定义层61的高度以便作为阳极5之间的电极间隔层。因此，本发明在定义像素定义层图形的时候，就直接制备好阳极之间的电极间隔层，而不需要再单独制备电极间隔层，不需要在阳极之间再沉积一层SiO层并使用光罩定义SiO层的图形；因而，本发明相对于现有的喷墨打印的OLED显示面板的制备方法而言，可以节省一道光罩，节约喷墨打印的OLED显示面板的制备时间和成本。
并且，本发明中阳极之间的电极间隔层采用的像素定义层的材料，而不是SiO材料，像素定义层的材料不像SiO材料那样包含氢键和氢离子，不会降低薄膜晶体管的迁移率，还可以有效抑制阈值电压漂移，因而不会对喷墨打印的OLED显示面板中的薄膜晶体管造成劣化。
本发明的喷墨打印的OLED显示面板采用喷墨打印技术，一次可以打印两个亚像素，可以有效提高喷墨打印的OLED显示面板的解析度，并减小了喷墨打印工艺难度。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (16)

  1. 一种喷墨打印的OLED显示面板的制备方法，其中，包括下述步骤：
    在制备有至少一对薄膜晶体管的玻璃基板上方依次形成钝化层和平坦层，且所述钝化层覆盖所述至少一对薄膜晶体管；
    在所述钝化层以及所述平坦层上均形成至少一对过孔；
    在所述平坦层上制备至少一对阳极，且所述至少一对阳极通过所述平坦层上的过孔以及所述钝化层上的过孔与所述至少一对薄膜晶体管电性连接；
    在所述平坦层上沉积像素定义层，且所述像素定义层覆盖所述至少一对阳极；
    采用半色调光罩定义所述像素定义层的图形，使得所述像素定义层位于所述至少一对阳极上方的区域形成缺口，且将所述至少一对阳极之间的像素定义层的高度减小；
    采用喷墨打印技术在所述像素定义层的缺口中制备发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层。
  2. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，还包括下述步骤：
    在所述发光层上方制备阴极。
  3. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，采用半色调光罩定义所述像素定义层的图形时，
    将所述半色调光罩设于所述像素定义层的上方，且所述半色调光罩的半透光区位于所述至少一对阳极之间的像素定义层的上方，所述半色调光罩的透光区位于所述至少一对阳极的上方，通过黄光透过所述半色调光罩定义所述像素定义层的图形。
  4. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
    所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光阻层，所述平坦层的厚度范围为10000～20000埃米。
  5. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，在所述平坦层上制备至少一对阳极，包括下述步骤：
    在所述平坦层上沉积ITO材料层，利用黄光图形化所述ITO材料层，得到所述至少一对阳极；其中，所述阳极的厚度范围为500～1000埃米。
  6. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
  7. 根据权利要求1所述的喷墨打印的OLED显示面板的制备方法，其中，采用黄光在所述钝化层以及所述平坦层上均形成所述至少一对过孔。
  8. 一种喷墨打印的OLED显示面板的制备方法，其中，包括下述步骤：
    在制备有至少一对薄膜晶体管的玻璃基板上方依次形成钝化层和平坦层，且所述钝化层覆盖所述至少一对薄膜晶体管；
    在所述钝化层以及所述平坦层上均形成至少一对过孔；
    在所述平坦层上制备至少一对阳极，且所述至少一对阳极通过所述平坦层上的过孔以及所述钝化层上的过孔与所述至少一对薄膜晶体管电性连接；
    在所述平坦层上沉积像素定义层，且所述像素定义层覆盖所述至少一对阳极；
    采用半色调光罩定义所述像素定义层的图形，使得所述像素定义层位于所述至少一对阳极上方的区域形成缺口，且将所述至少一对阳极之间的像素定义层的高度减小；
    采用喷墨打印技术在所述像素定义层的缺口中制备发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层；
    在所述发光层上方制备阴极。
  9. 根据权利要求8所述的喷墨打印的OLED显示面板的制备方法，其中，采用半色调光罩定义所述像素定义层的图形时，
    将所述半色调光罩设于所述像素定义层的上方，且所述半色调光罩的半透光区位于所述至少一对阳极之间的像素定义层的上方，所述半色调光罩的透光区位于所述至少一对阳极的上方，通过黄光透过所述半色调光罩定义所 述像素定义层的图形。
  10. 根据权利要求8所述的喷墨打印的OLED显示面板的制备方法，其中，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
    所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光阻层，所述平坦层的厚度范围为10000～20000埃米。
  11. 根据权利要求8所述的喷墨打印的OLED显示面板的制备方法，其中，在所述平坦层上制备至少一对阳极，包括下述步骤：
    在所述平坦层上沉积ITO材料层，利用黄光图形化所述ITO材料层，得到所述至少一对阳极；其中，所述阳极的厚度范围为500～1000埃米。
  12. 根据权利要求8所述的喷墨打印的OLED显示面板的制备方法，其中，所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
  13. 根据权利要求8所述的喷墨打印的OLED显示面板的制备方法，其中，采用黄光在所述钝化层以及所述平坦层上均形成所述至少一对过孔。
  14. 一种喷墨打印的OLED显示面板，其中，包括：至少一对薄膜晶体管以及位于所述至少一对薄膜晶体管上方且依次层叠的钝化层和平坦层，所述钝化层和所述平坦层上均设有至少一对过孔，所述钝化层上的过孔与所述平坦层上的过孔正对且位于所述薄膜晶体管的上方，所述平坦层上设有至少一对阳极，且所述至少一对阳极通过所述平坦层的过孔以及所述钝化层的过孔与所述薄膜晶体管电性连接；
    所述平坦层上设有像素定义层，所述像素定义层包含至少一对缺口，所述至少一对缺口分别位于所述至少一对阳极上方，所述至少一对阳极之间的像素定义层的高度小于所述至少一对阳极两侧的像素定义层的高度；
    所述至少一对缺口中设有发光层，且所述发光层覆盖所述至少一对阳极之间的像素定义层。
  15. 根据权利要求14所述的喷墨打印的OLED显示面板，其中，所述发光层上方设有阴极。
  16. 根据权利要求14所述的喷墨打印的OLED显示面板，其中，所述钝化层包含至少一层SiOx和/或至少一层SiNx，且所述钝化层的厚度范围为1000～5000埃米；
    所述平坦层包含至少一种成份的光阻层，且所述平坦层包含至少一层光阻层，所述平坦层的厚度范围为10000～20000埃米；
    所述像素定义层包含至少一种成份的光阻层，且所述像素定义层包含至少一层光阻层，所述至少一对阳极两侧的像素定义层的厚度范围为10000～20000埃米。
PCT/CN2018/079002 2018-01-09 2018-03-14 一种喷墨打印的oled显示面板及其制备方法 WO2019136820A1 (zh)

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