WO2021012399A1 - 显示面板、显示装置及其制作方法 - Google Patents

显示面板、显示装置及其制作方法 Download PDF

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Publication number
WO2021012399A1
WO2021012399A1 PCT/CN2019/109950 CN2019109950W WO2021012399A1 WO 2021012399 A1 WO2021012399 A1 WO 2021012399A1 CN 2019109950 W CN2019109950 W CN 2019109950W WO 2021012399 A1 WO2021012399 A1 WO 2021012399A1
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Prior art keywords
light
layer
region
sub
emitting
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PCT/CN2019/109950
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English (en)
French (fr)
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向明
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武汉华星光电半导体显示技术有限公司
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Priority to US16/624,109 priority Critical patent/US20210336184A1/en
Publication of WO2021012399A1 publication Critical patent/WO2021012399A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel, a display device and a manufacturing method thereof.
  • the transparent display device can transmit external light in front of the screen on the one hand to realize the under-screen camera technology, and on the other hand can transmit external light behind the screen, so that the user can see objects behind the screen.
  • Organic light-emitting diode The Light-Emitting Diode (OLED) display device is an ideal transparent display device because it does not require a backlight.
  • a "semi-transparent and semi-reflective" cathode layer must be used to improve the light output rate and color purity.
  • the cathode adopts the entire surface of the open mask (Open Mask, OPM) evaporation, the penetration ability of the screen is reduced.
  • the cathode thinning or patterning scheme can be adopted.
  • the effect of the microcavity will be weakened, resulting in a decrease in light extraction efficiency, and at the same time the color coordinates will shift, which will affect the normal display effect of the screen.
  • the cathode patterning scheme in order to ensure that the common ground terminal voltage signal can be input to the cathode of each pixel, it is still necessary to connect the cathode on each pixel with a thinner cathode trace, thus increasing the voltage drop of the cathode. And the uniformity of the display. Therefore, how to improve the penetration ability of the cathode without affecting the display effect of the screen has become an urgent problem to be solved.
  • the existing transparent display device has the problems of low light penetration capability of the cathode and poor display effect. Therefore, it is necessary to provide a display panel, a display device and a manufacturing method thereof to improve this defect.
  • the embodiments of the present disclosure provide a display panel, a display device and a manufacturing method thereof, which are used to solve the problem of low light penetration ability and poor display effect of the cathode of the existing transparent display device.
  • An embodiment of the present disclosure provides a display panel including: a display area, the display area including: a light-emitting sub-region and an external light-transmitting sub-region;
  • the display panel includes:
  • An anode the anode is arranged in the light-emitting sub-region
  • a light-emitting layer, the light-emitting layer is disposed on the anode and located in the light-emitting sub-region;
  • a cathode the cathode being arranged on a side of the light-emitting layer away from the anode and covering the display area;
  • the covering layer is arranged on the side of the cathode away from the light emitting layer, and the covering layer covers at least the light emitting sub-region.
  • the cover layer only covers the light-emitting sub-region.
  • the cover layer covers the light-emitting sub-region and the external light transmission sub-region, and the thickness of the cover layer located in the light-emitting sub-region is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • the cover layer thickness is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • the display panel further includes a camera component disposed on a side of the substrate away from the light-emitting layer.
  • An embodiment of the present disclosure provides a display device, including a display panel, the display panel includes: a display area, the display area includes: a light-emitting sub-region and an external light transmission sub-region;
  • the display panel includes:
  • An anode the anode is arranged in the light-emitting sub-region
  • a light-emitting layer, the light-emitting layer is disposed on the anode and located in the light-emitting sub-region;
  • a cathode the cathode being arranged on a side of the light-emitting layer away from the anode and covering the display area;
  • the covering layer is arranged on the side of the cathode away from the light emitting layer, and the covering layer covers at least the light emitting sub-region.
  • the cover layer only covers the light-emitting sub-region.
  • the cover layer covers the light-emitting sub-region and the external light transmission sub-region, and the thickness of the cover layer located in the light-emitting sub-region is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • the cover layer thickness is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • the display panel further includes a camera component disposed on a side of the substrate away from the light-emitting layer.
  • the embodiments of the present disclosure also provide a manufacturing method of a display device, including:
  • the substrate including a display area, the display area including: a light-emitting sub-region and an external light transmission sub-region;
  • the light-emitting layer is formed on the side of the anode away from the substrate
  • the cathode is formed on the side of the light-emitting layer away from the anode, and covers the display area
  • the covering layer is at least Cover the light-emitting sub-region.
  • the cover layer only covers the light-emitting sub-region.
  • the mask used for vapor deposition to form the covering layer is a fine metal mask.
  • the cover layer covers the light-emitting sub-region and the external light transmission sub-region, and the thickness of the cover layer located in the light-emitting sub-region is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • the cover layer thickness is greater than the thickness of the cover layer located in the external light transmission sub-region.
  • an evaporation process is performed through a fine metal mask and an open mask respectively to form the covering layer.
  • a cover layer is provided on the side of the cathode away from the light-emitting layer, and the cover layer covers at least the light-emitting sub-region, and the thickness of the original cover layer on the cathode is maintained by patterning the cover layer , To ensure the normal electrical performance of each film layer and the display effect of the display panel and the display device, and at the same time enhance the light penetration ability of the external light transmission sub-area, thereby improving the transparent display effect of the display panel and the display device.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a display panel provided in the first embodiment of the disclosure
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a display panel provided in a second embodiment of the disclosure
  • FIG. 3 is a schematic flowchart of a manufacturing method of a display device provided in the third embodiment of the disclosure.
  • FIG. 4A is a schematic diagram of a cross-sectional structure of a display device provided in a third embodiment of the disclosure.
  • 4B is a schematic cross-sectional structure diagram of the display device provided in the third embodiment of the disclosure.
  • 4C is a schematic diagram of a cross-sectional structure of the display device provided in the third embodiment of the disclosure.
  • FIG. 5 is a schematic diagram of a cross-sectional structure of the display device provided in the fourth embodiment of the disclosure.
  • the embodiment of the present disclosure provides a display panel 100, which will be described in detail below with reference to FIG. 1.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a display panel 100 provided by an embodiment of the disclosure.
  • the display panel 100 includes a display area, and all shown in FIG. 1 are display areas, and the display area includes a light-emitting sub-area. A1 and an external light transmission sub-area A2.
  • the light-emitting sub-area A1 is used for the normal display of the display panel and the external light transmission sub-area A2 is used for the external light when the display panel 100 is not performing a normal display function. Through the provided path, the display effect of the transparent display of the display panel 100 is realized.
  • the display panel 100 includes a base substrate 101, a buffer layer 102 disposed on the substrate 101; a polysilicon layer 103 disposed on the side of the buffer layer 102 away from the substrate 101; A first gate insulating layer 104 on the buffer layer 102 and covering the polysilicon layer 103; a first gate line layer 105 and a second gate electrode layer 105 and a second gate electrode are sequentially stacked on the first gate insulating layer 104
  • the source and drain wiring layer 109 on one side of the substrate 101, the source and drain wiring layer 109 passes through the interlayer dielectric layer 108, the second gate line layer 107 and the first gate line layer
  • the via hole of 105 is connected to the polysilicon layer 103; the flat layer 110 disposed on the side
  • the display panel 100 further includes an anode 111, the anode 111 is disposed in the light-emitting sub-region A1, and the anode 111 is disposed on the flat layer 110 and passes through the flat layer 110.
  • the first communication hole of the layer 110 is connected to the source and drain wiring layer 109.
  • the pixel defining layer 112 covers the anode 111, the pixel defining layer 112 is provided with a via hole, and the via hole exposes the anode 111.
  • the display panel 100 further includes a light-emitting layer 113 disposed on the anode 111 and located in the light-emitting sub-region A1.
  • the display panel 100 further includes a cathode 114 which is disposed on a side of the light-emitting layer 113 away from the anode 111 and covers the display area.
  • the display panel 100 further includes a cover layer 115 disposed on a side of the cathode 114 away from the light-emitting layer 113, and the cover layer 115 covers at least the light-emitting sub-region A1.
  • the cover layer 115 only covers the light-emitting sub-region A1, and the boundary of the cover layer 115 is flush with the boundary of the light-emitting sub-region A1.
  • the cover layer 115 is disposed in the light-emitting sub-region A1 for improving the light extraction rate of the light-emitting devices of each film layer in the display panel 100 and improving the normal display effect of the display panel 100. Therefore, the covering layer not provided in the external light transmission sub-region A2 reduces the refractive index of the external light transmission sub-region A2 to external light, thereby increasing the light transmittance of the external light transmitting sub-region A2, and enhances the transparency of the display panel 100 display effect.
  • the display panel 100 further includes a camera assembly (not shown in the figure), the camera assembly is disposed on the side of the substrate 101 away from the light-emitting layer 113, and external light can pass through the display
  • the external light transmission sub-area A2 of the panel 100 enters the camera assembly, so that the under-screen camera camera technology can also be implemented.
  • the cover layer 115 is patterned, the cover layer 115 located in the light-emitting sub-region A1 is reserved, and the cover layer is not provided in the external light transmission sub-region A2, thereby improving the external light transmission of the external light transmission sub-region A2.
  • the thickness of the original cathode 114 is retained, that is, the electrical properties of the original cathode 114 and other film layers are maintained, thus maintaining the original display effect of the display panel 100 and improving the transparency of the display panel 100. display effect.
  • the embodiment of the present disclosure provides a display panel, which will be described in detail below with reference to FIG. 2.
  • FIG. 2 is a schematic cross-sectional structure diagram of a display panel 200 provided by an embodiment of the present disclosure.
  • the display panel 200 includes a display area, and all shown in FIG. 2 are display areas, and the display area includes a light-emitting sub-area. A1 and an external light transmission sub-area A2.
  • the light-emitting sub-area A1 is used for the display panel 200 to display light normally
  • the external light transmission sub-area A2 is used for the external light when the display panel 200 is not performing a normal display function.
  • the light passes through the provided path, thereby achieving the display effect of the transparent display of the display panel 200.
  • the display panel 200 includes a base substrate 201, a buffer layer 202 disposed on the substrate 201; a polysilicon layer 203 disposed on the side of the buffer layer 202 away from the substrate 201; The first gate insulating layer 204 on the buffer layer 202 and covering the polysilicon layer 203; the first gate line layer 205 and the second gate are stacked on the first gate insulating layer 204 in sequence The insulating layer 206 and the second gate line layer 207; the interlayer dielectric layer 208 disposed on the side of the second gate insulating layer 206 away from the substrate 201; the interlayer dielectric layer 208 disposed on the side away from the substrate 201 The source and drain wiring layer 209 on one side of the substrate 201, the source and drain wiring layer 209 passes through the interlayer dielectric layer 208, the second gate line layer 207 and the first gate line layer
  • the via hole of 205 is connected to the polysilicon layer 203; the flat layer 210 is disposed on the side of the interlayer dielectric
  • the display panel 200 further includes an anode 211, the anode 211 is disposed in the light-emitting sub-region A1, and the anode 211 is disposed on the flat layer 210 and passes through the flat layer.
  • the second communication hole of the layer 210 is connected to the source and drain wiring layer 209.
  • the pixel defining layer 212 covers the anode 211, the pixel defining layer 212 is provided with a via hole, and the via hole exposes the anode 211.
  • the display panel 200 further includes a light-emitting layer 213 disposed on the anode 211 and located in the light-emitting sub-region A1.
  • the display panel 200 further includes a cathode 214 which is disposed on the side of the light-emitting layer 213 away from the anode 211 and covers the display area.
  • the cover layer covers the light-emitting sub-region A1 and the external light transmission sub-region A2, and the thickness of the cover layer located in the light-emitting sub-region A1 is greater than that of the cover layer located in the external light transmission sub-region A2 thickness.
  • the covering layer includes a first covering layer 215, a second covering layer 216, and a third covering layer 217.
  • the first covering layer 215 and the second covering layer 216 are stacked on the light emitting layer. And the boundary between the first covering layer 215 and the second covering layer 216 is kept flush with the boundary of the light-emitting sub-region A1, and the third covering layer 217 is arranged on the external light transmission Within sub-area A2.
  • the total thickness of the first covering layer 215 and the second covering layer 216 is greater than the thickness of the third covering layer 217.
  • the first covering layer 215 and the second covering layer 216 are arranged in the light-emitting sub-region A1 to increase the light output rate of the light-emitting devices in the display panel 200 and improve the normal display effect of the display panel 200.
  • the thickness of the third covering layer 217 is set to be smaller than the sum of the thicknesses of the first covering layer 215 and the second covering layer 216. The purpose is that when the actual panel 200 performs a normal display function, the external light transmission sub-region A2 can be used to improve the display panel.
  • the light extraction rate of the internal light emitting device 200 can reduce the refractive index of the external light transmission sub-region A2 to external light when performing transparent display, thereby increasing the light transmittance of the external light transmission sub-region A2, and enhance the display panel 200 Transparent display effect.
  • the display panel 200 further includes a camera assembly (not shown in the figure).
  • the camera assembly is disposed on the side of the substrate 201 away from the light-emitting layer 113, and external light can pass through the display
  • the external light transmission sub-area A2 of the panel 200 enters the camera assembly, so that the under-screen camera camera technology can also be implemented.
  • the embodiment of the present disclosure maintains the original thickness of the first cover layer 215 and the second cover layer 216 located in the light emitting sub-region A1, and reduces the thickness of the third cover layer 217 located in the external light transmission sub-region A2, thereby maintaining the display While the panel 200 has the original display effect, the external light transmittance of the external light transmission sub-region A2 is improved, thereby enhancing the transparent display effect of the display panel 200.
  • the embodiment of the present disclosure provides a manufacturing method of the display device 300, which will be described in detail below with reference to FIGS. 3 and 4A to 4C.
  • FIG. 3 is a schematic flowchart of a manufacturing method of a display device 300 according to an embodiment of the disclosure
  • FIGS. 4A to 4C are schematic cross-sectional structural diagrams of a display device 300 according to an embodiment of the disclosure.
  • the method includes:
  • Step S10 Provide a substrate 301, the substrate 301 includes a display area, and the display area includes: a light-emitting sub-area A1 and an external light-transmitting sub-area A2.
  • the display area includes: a light-emitting sub-area A1 and an external light-transmitting sub-area A2.
  • all shown in FIG. 4A are display areas.
  • the left side of the dotted line is the light-emitting sub-area A1
  • the right side of the dotted line is the external light transmission sub-area A2.
  • the light-emitting sub-area A1 is used for display in the display device 300.
  • the external light transmission sub-region A2 is used to provide a transmission path for external light.
  • Step S20 forming an anode 311, a pixel defining layer 312, a light emitting layer 313 and a cathode 314 on the substrate 301 in sequence.
  • the pixel defining layer 312 covers the anode 312, the pixel defining layer 312 is formed with a via hole, and the via hole exposes the underlying anode 311, and the light emitting layer 313 is formed on the anode 311.
  • the cathode 314 is formed on the side of the light-emitting layer 313 away from the anode 311 and covers the display area.
  • the anode 311 and the light-emitting layer 313 are both located In the light-emitting sub-region A1.
  • Step S30 forming a covering layer 315 by evaporation on the side of the cathode 314 away from the substrate 301. As shown in FIG. 4C, the cover layer 315 only covers the light-emitting sub-region A1.
  • the mask selected for vapor deposition to form the covering layer 315 is a fine metal mask, and the fine metal mask is vapor deposited in the light-emitting sub-region A1 to form a covering Layer 315, and no covering layer material is evaporated in the external light transmission area A2.
  • the cover layer 315 is disposed in the light-emitting sub-region A1 for improving the light extraction rate of the light-emitting device in the display device 300 and improving the normal display effect of the display device 300. Therefore, no covering layer is provided in the external light transmission sub-region A2 to reduce the refractive index of the external light transmission sub-region A2 to external light, thereby increasing the light transmittance of the external light transmitting sub-region A2 and enhancing the display device 300 Transparent display effect.
  • step S10 before performing step S10, the following steps need to be performed:
  • Step S101 providing a substrate 301, and depositing a buffer layer 302 on the substrate 301;
  • Step S102 depositing and etching on the buffer layer 302 to form a patterned polysilicon layer 303, and doping the patterned polysilicon layer 303 with heavy ions to form source/drain electrodes;
  • Step S103 depositing and forming a first gate insulating layer 304 on the buffer layer 302, the first gate insulating layer 304 covering the source/drain electrodes, and depositing on the first gate insulating layer 304 And etch to form a first metal gate layer 305;
  • Step S104 Depositing and forming a second gate insulating layer 306 on the first gate insulating layer 304, the second gate insulating layer 306 covers the first metal gate layer 305, and is deposited on the second gate insulating layer 305. Depositing and etching on the gate insulating layer to form a second metal gate layer 307;
  • Step S105 depositing and forming an interlayer dielectric layer 308 on the second gate insulating layer 306, and etching to form the interlayer dielectric layer 308, the second gate insulating layer 306, and the first A via hole of the gate insulating layer 304 is deposited and etched on the interlayer dielectric layer 308 to form a source/drain wiring layer 309.
  • the source/drain wiring layer 309 passes through the via hole and the source/ Drain contact;
  • Step S106 coating, exposing, developing and curing the source and drain wiring layer 309 to form a patterned organic flat layer 310.
  • the cover layer 315 located in the light-emitting sub-region A1 is retained, and the cover layer is not provided in the external light transmission sub-region A2, thereby increasing the external light transmittance of the external light transmission sub-region A2, and at the same time
  • the thickness of the original cathode 314 is retained, that is, the electrical properties of the original cathode 314 and other film layers are maintained, thus maintaining the original display effect of the display device 300 and at the same time improving the transparent display effect of the display device 300.
  • the embodiment of the present disclosure provides a manufacturing method of the display device 400, which will be described in detail below with reference to FIG. 5.
  • the manufacturing method is the same as the manufacturing methods S10 to S30 of the display device 300 provided in the third embodiment, and the other structures are also the same as the display device 300.
  • FIG. 5 is an implementation of this disclosure.
  • the cross-sectional structure diagram of the display device 400 provided by the example, the cover layer of the display device 400 is composed of a first cover layer 415, a second cover layer 416, and a third cover layer 417.
  • the first cover layer 415 and the second cover layer The cover layer 416 is laminated and arranged in the light-emitting sub-region A1, and the boundary between the first cover layer 415 and the second cover layer 416 is kept flush with the boundary of the light-emitting sub-region A1, and the third cover
  • the layer 417 is disposed in the external light transmission sub-region A2, and the total thickness of the first covering layer 415 and the second covering layer 416 is greater than the thickness of the third covering layer 417.
  • the covering layer is formed by evaporation of a fine metal mask and an open mask respectively.
  • the first covering layer 415 is formed by evaporation of a fine metal mask first
  • the second covering layer 416 and the third covering layer 417 are formed by evaporation of an open mask.
  • the display device includes a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit.
  • the first covering layer on the red sub-pixel unit is formed by vapor deposition using a first fine metal mask. Two fine metal masks are evaporated to form the first covering layer on the green sub-pixel unit and the blue sub-pixel unit.
  • the first fine metal mask is provided with a plurality of first openings at positions corresponding to the red sub-pixel units, and the positions corresponding to the green sub-pixel units and the blue sub-pixel units are A closed structure;
  • the second fine metal mask is provided with a plurality of second openings at positions corresponding to the green sub-pixel units and the blue sub-pixel units, and at positions corresponding to the red sub-pixel units It is a closed structure.
  • the embodiment of the present disclosure maintains the original thickness of the first covering layer 415 and the second covering layer 416 located in the light emitting sub-region A1, and reduces the thickness of the third covering layer 417 located in the external light transmitting sub-region A2, thereby maintaining the display While the device 400 has the original display effect, the external light transmittance of the external light transmission sub-region A2 is improved, thereby improving the transparent display effect of the display device 400.

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Abstract

本揭示提供一种显示面板、显示装置及其制作方法，显示面板包括显示区域，显示区域包括：发光子区和外部光透射子区；显示面板还包括：阳极、发光层、阴极以及覆盖层，所述覆盖层至少覆盖所述发光子区，通过图案化所述覆盖层，保证各膜层正常的电学性能，提高所述显示面板以及显示装置的透明显示效果。

Description

显示面板、显示装置及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种显示面板、显示装置及其制作方法。
 背景技术
透明显示装置由于屏幕的穿透性高，一方面可以传输屏幕前面的外部光，从而实现屏下摄像头技术，另一方面可以传输屏幕后面的外部光，从而使得用户可以看到屏幕后方的物体。有机发光二极管（Organic Light-Emitting Diode, OLED）显示装置由于不需要背光源，是一种理想的透明显示设备。主流的顶发射OLED器件，为提高出光率以及色纯度必须采用“半透半反”的阴极层。然而，由于阴极采用开放式掩膜板（Open Mask, OPM）的整面蒸镀，导致屏幕的穿透能力降低。
 技术问题
为提高阴极的穿透能力，可采用阴极减薄或者图案化的方案。对于阴极减薄的方案，会减弱微腔作用，导致出光效率降低，同时色坐标发生偏移，影响屏幕的正常显示效果。而对于阴极图案化的方案，为保证公共接地端电压信号能够输入到每个像素的阴极中，仍然需要每个像素上的阴极用较细的阴极走线连接，因而加大了阴极的压降以及显示的均匀性。因此，如何不影响屏幕的显示效果，又能提高阴极的穿透能力就成了亟需解决的问题。
综上所述，现有透明显示装置存在阴极的光线穿透能力低、显示效果不佳的问题。故，有必要提供一种显示面板、显示装置及其制作方法来改善这一缺陷。
 技术解决方案
本揭示实施例提供一种显示面板、显示装置及其制作方法，用于解决现有透明显示装置阴极的光线穿透能力低、显示效果不佳的问题。
本揭示实施例提供一种显示面板，包括：显示区域，所述显示区域包括：发光子区和外部光透射子区；
所述显示面板包括：
阳极，所述阳极设置于所述发光子区内；
发光层，所述发光层设置于所述阳极上，且位于所述发光子区内；
阴极，所述阴极设置于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域；以及
覆盖层，所述覆盖层设置于所述阴极远离所述发光层的一侧上，且所述覆盖层至少覆盖所述发光子区。
根据本揭示一实施例，所述覆盖层仅覆盖所述发光子区。
根据本揭示一实施例，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
根据本揭示一实施例，所述显示面板还包括摄像组件，所述摄像组件设置于所述基板远离所述发光层的一侧上。
本揭示实施例提供一种显示装置，包括显示面板，所述显示面板包括：显示区域，所述显示区域包括：发光子区和外部光透射子区；
所述显示面板包括：
阳极，所述阳极设置于所述发光子区内；
发光层，所述发光层设置于所述阳极上，且位于所述发光子区内；
阴极，所述阴极设置于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域；以及
覆盖层，所述覆盖层设置于所述阴极远离所述发光层的一侧上，且所述覆盖层至少覆盖所述发光子区。
根据本揭示一实施例，所述覆盖层仅覆盖所述发光子区。
根据本揭示一实施例，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
根据本揭示一实施例，所述显示面板还包括摄像组件，所述摄像组件设置于所述基板远离所述发光层的一侧上。
本揭示实施例还提供一种显示装置的制作方法，包括：
提供基板，所述基板包括显示区域，所述显示区域包括：发光子区和外部光透射子区；
在所述基板上依次形成阳极、像素定义层、发光层和阴极；以及
在所述阴极远离所述基板的一侧上蒸镀形成覆盖层；
其中，所述发光层形成于所述阳极远离所述基板的一侧上，所述阴极形成于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域，所述覆盖层至少覆盖所述发光子区。
根据本揭示一实施例，所述覆盖层仅覆盖所述发光子区。
根据本揭示一实施例，蒸镀形成所述覆盖层所采用的掩膜板为精细金属掩膜板。
根据本揭示一实施例，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
根据本揭示一实施例，分别通过精细金属掩膜板和开放式掩膜板进行蒸镀制程，形成所述覆盖层。
 有益效果
本揭示的有益效果：本揭示实施例在阴极远离发光层的一侧设置覆盖层，且所述覆盖层至少覆盖发光子区，并通过图案化所述覆盖层，保持阴极上原有覆盖层的厚度，保证了各膜层正常的电学性能，以及显示面板和显示装置的显示效果，同时增强了外部光透射子区光线的穿透能力，从而提高所述显示面板以及显示装置的透明显示效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本揭示实施例一提供的显示面板的截面结构示意图；
图2为本揭示实施例二提供的显示面板的截面结构示意图；
图3为本揭示实施例三提供的显示装置制作方法的流程示意图；
图4A为本揭示实施例三提供的显示装置的截面结构示意图；
图4B为本揭示实施例三提供的显示装置的截面结构示意图；
图4C为本揭示实施例三提供的显示装置的截面结构示意图；
图5为本揭示实施例四提供的显示装置的截面结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
下面结合附图和具体实施例对本揭示做进一步的说明：
实施例一：
本揭示实施例提供一种显示面板100，下面结合图1进行详细说明。
如图1所示，图1为本揭示实施例提供的显示面板100的截面结构示意图，所述显示面板100包括显示区域，图1中所示均为显示区域，所述显示区域包括发光子区A1和外部光透射子区A2，所述发光子区A1用于所述显示面板正常显示发光作用，所述外部光透射子区A2用于在显示面板100不进行正常显示作用时，为外部光线穿过提供途径，从而实现显示面板100透明显示的显示效果。
在本实施例中，所述显示面板100包括衬底基板101，设置于所述基板101上的缓冲层102；设置于所述缓冲层102远离所述基板101一侧上的多晶硅层103；设置于所述缓冲层102上且覆盖所述多晶硅层103的第一栅极绝缘层104；依次层叠设置于所述第一栅极绝缘层104上的第一栅极线层105、第二栅极绝缘层106以及第二栅极线层107；设置于所述第二栅极绝缘层106远离所述基板101一侧上的层间介电层108；设置于所述层间介电层108远离所述基板101一侧上的源漏走线层109，所述源漏走线层109通过贯穿所述层间介电层108、所述第二栅极线层107以及第一栅极线层105的过孔与所述多晶硅层103相连接；设置于所述层间介电层108远离所述基板101一侧上的平坦层110，且所述平坦层110覆盖所述源漏走线层109；所述平坦层110远离所述基板101一侧上还设有像素定义层112。
如图1所示，所述显示面板100还包括阳极111，所述阳极111设置于所述发光子区A1内，且所述阳极111设置于所述平坦层110上，并通过贯穿所述平坦层110的第一连通孔与所述源漏走线层109相连接。所述像素定义层112覆盖所述阳极111，所述像素定义层112上设有过孔，所述过孔暴露出所述阳极111。
所述显示面板100还包括发光层113，所述发光层113设置于所述阳极111上，且位于所述发光子区A1内。所述显示面板100还包括阴极114，所述阴极114设置于所述发光层113远离所述阳极111的一侧上，并覆盖所述显示区域。
所述显示面板100还包括覆盖层115，所述覆盖层115设置于所述阴极114远离所述发光层113的一侧上，且所述覆盖层115至少覆盖所述发光子区A1。
在本实施例中，如图1所示，所述覆盖层115仅覆盖所述发光子区A1，且所述覆盖层115的边界与所述发光子区A1的边界保持齐平。所述覆盖层115设置于所述发光子区A1内用于提高所述显示面板100中各膜层发光器件的光导出率，提升所述显示面板100的正常显示效果。因此，在外部光透射子区A2不设置的覆盖层，减小外部光透射子区A2对外部光线的折射率，从而提高外部光透射子区A2的光线透过率，增强显示面板100的透明显示效果。
在一些实施例中，所述显示面板100还包括摄像组件（图中未示出），所述摄像组件设置于所述基板101远离所述发光层113的一侧，外界光线可以通过所述显示面板100的外部光透射子区A2进入所述摄像组件，从而还可以实现屏下摄像头摄像技术。
本揭示实施例通过图案化所述覆盖层115，保留位于发光子区A1内的覆盖层115，在外部光透射子区A2内不设置覆盖层，从而提高外部光透射子区A2外部光线的透过率，同时，保留原有阴极114的厚度，即保持原有阴极114以及其他膜层的电学性能，因而保持了显示面板100原有的显示效果，同时还提升了所述显示面板100的透明显示效果。
实施例二：
本揭示实施例提供一种显示面板，下面结合图2进行详细说明。
如图2所示，图2为本揭示实施例提供的显示面板200的截面结构示意图，所述显示面板200包括显示区域，图2中所示均为显示区域，所述显示区域包括发光子区A1和外部光透射子区A2，所述发光子区A1用于所述显示面板200正常显示发光作用，所述外部光透射子区A2用于在显示面板200不进行正常显示作用时，为外部光线穿过提供途径，从而实现显示面板200透明显示的显示效果。
在本实施例中，所述显示面板200包括衬底基板201，设置于所述基板201上的缓冲层202；设置于所述缓冲层202远离所述基板201一侧上的多晶硅层203；设置于所述缓冲层202上且覆盖所述多晶硅层203的第一栅极绝缘层204；依次层叠设置于所述第一栅极绝缘层204上的第一栅极线层205、第二栅极绝缘层206以及第二栅极线层207；设置于所述第二栅极绝缘层206远离所述基板201一侧上的层间介电层208；设置于所述层间介电层208远离所述基板201一侧上的源漏走线层209，所述源漏走线层209通过贯穿所述层间介电层208、所述第二栅极线层207以及第一栅极线层205的过孔与所述多晶硅层203相连接；设置于所述层间介电层208远离所述基板201一侧上的平坦层210，且所述平坦层110覆盖所述源漏走线层209；所述平坦层210远离所述基板201一侧上还设有像素定义层212。
如图2所示，所述显示面板200还包括阳极211，所述阳极211设置于所述发光子区A1内，且所述阳极211设置于所述平坦层210上，并通过贯穿所述平坦层210的第二连通孔与所述源漏走线层209相连接。所述像素定义层212覆盖所述阳极211，所述像素定义层212上设有过孔，所述过孔暴露出所述阳极211。
所述显示面板200还包括发光层213，所述发光层213设置于所述阳极211上，且位于所述发光子区A1内。所述显示面板200还包括阴极214，所述阴极214设置于所述发光层213远离所述阳极211的一侧上，并覆盖所述显示区域。
所述覆盖层覆盖所述发光子区A1和所述外部光透射子区A2，且位于所述发光子区A1的所述覆盖层厚度大于位于所述外部光透射子区A2的所述覆盖层厚度。
如图2所示，所述覆盖层包括第一覆盖层215、第二覆盖层216和第三覆盖层217，所述第一覆盖层215和所述第二覆盖层216层叠设置于所述发光子区A1内，且所述第一覆盖层215和所述第二覆盖层216的边界与所述发光子区A1的边界保持齐平，所述第三覆盖层217设置于所述外部光透射子区A2内。所述第一覆盖层215和所述第二覆盖层216的厚度之和大于所述第三覆盖层217的厚度。所述第一覆盖层215和第二覆盖层216设置于所述发光子区A1内用于提高所述显示面板200中发光器件的光导出率，提升所述显示面板200的正常显示效果。将第三覆盖层217的厚度设置小于第一覆盖层215和第二覆盖层216的厚度之和，目的在于，当现实面板200进行正常显示作用时，外部光透射子区A2可用于提高显示面板200内部发光器件的光导出率，当进行透明显示作用时能够减小外部光透射子区A2对外部光线的折射率，从而提高外部光透射子区A2的光线透过率，增强显示面板200的透明显示效果。
在一些实施例中，所述显示面板200还包括摄像组件（图中未示出），所述摄像组件设置于所述基板201远离所述发光层113的一侧，外界光线可以通过所述显示面板200的外部光透射子区A2进入所述摄像组件，从而还可以实现屏下摄像头摄像技术。
本揭示实施例通过保持位于发光子区A1内的第一覆盖层215和第二覆盖层216原有厚度，减薄位于外部光透射子区A2内的第三覆盖层217的厚度，从而保持显示面板200具有原有显示效果的同时，提升外部光透射子区A2的外部光线透过率，从而提升显示面板200的透明显示效果。
实施例三：
本揭示实施例提供一种显示装置300的制作方法，下面结合图3、图4A至图4C进行详细说明。
如图3所示，图3为本揭示实施例提供的显示装置300制作方法的流程示意图,图4A至图4C为本揭示实施例提供的显示装置300的截面结构示意图，所述方法包括：
步骤S10：提供基板301，所述基板301包括显示区域，所述显示区域包括：发光子区A1和外部光透射子区A2。如图4A所示，图4A中所展示的均为显示区域，虚线左侧为发光子区A1，虚线右侧为外部光透射子区A2，所述发光子区A1用于显示装置300内显示器件的正常显示，所述外部光透射子区A2用于为外部光线提供传输途径。
步骤S20：在所述基板301上依次形成阳极311、像素定义层312、发光层313和阴极314。如图4B所示，像素定义层312覆盖所述阳极312，所述像素定义层312上形成有过孔，所述过孔暴露出下层的阳极311，所述发光层313形成于所述阳极311远离所述基板301的一侧上，所述阴极314形成于所述发光层313远离所述阳极311的一侧上，并覆盖所述显示区域，所述阳极311和所述发光层313均位于所述发光子区A1内。
步骤S30：在所述阴极314远离所述基板301的一侧上蒸镀形成覆盖层315。如图4C所示，所述覆盖层315仅覆盖所述发光子区A1。
具体地，所述步骤S30中，蒸镀形成所述覆盖层315所选用的掩膜板为精细金属掩膜板，通过所述精细金属掩膜板在所述发光子区A1内蒸镀形成覆盖层315，而在所述外部光透射区A2不蒸镀覆盖层材料。
所述覆盖层315设置于所述发光子区A1内用于提高所述显示装置300中发光器件的光导出率，提升所述显示装置300的正常显示效果。因此，在外部光透射子区A2内不设置覆盖层，减小外部光透射子区A2对外部光线的折射率，从而提高外部光透射子区A2的光线透过率，增强显示显示装置300的透明显示效果。
在本实施例中，在进行所述步骤S10之前，还需进行如下步骤：
步骤S101：提供基板301，在所述基板301上沉积形成缓冲层302；
步骤S102：在所述缓冲层302上沉积并刻蚀形成图案化多晶硅层303，对所述图案化多晶硅层303进行重离子掺杂，从而形成源/漏极；
步骤S103：在所述缓冲层302上沉积形成第一栅极绝缘层304，所述第一栅极绝缘层304覆盖所述源/漏极，并在所述第一栅极绝缘层304上沉积并刻蚀形成第一金属栅极层305；
步骤S104：在所述第一栅极绝缘层304上沉积形成第二栅极绝缘层306，所述第二栅极绝缘层306覆盖所述第一金属栅极层305，并在所述第二栅极绝缘层上沉积并刻蚀形成第二金属栅极层307；
步骤S105：在所述第二栅极绝缘层306上沉积形成层间介电层308，并刻蚀形成贯穿所述层间介电层308、所述第二栅极绝缘层306以及所述第一栅极绝缘层304的过孔，在所述层间介电层308上沉积并刻蚀形成源漏走线层309，所述源漏走线层309通过所述过孔与所述源/漏极相接触；
步骤S106：在所述源漏走线层309上涂布、曝光、显影并固化形成图案化有机平坦层310。
通过图案化所述覆盖层315，保留位于发光子区A1内的覆盖层315，在外部光透射子区A2内不设置覆盖层，从而提高外部光透射子区A2外部光线的透过率，同时，保留原有阴极314的厚度，即保持原有阴极314以及其他膜层的电学性能，因而保持了显示装置300原有的显示效果，同时还提升了所述显示装置300的透明显示效果。
实施例四：
本揭示实施例提供一种显示装置400的制作方法，下面结合图5进行详细说明。所述制作方法与实施例三所提供的显示装置300的制作方法S10~S30相同，其他结构也与所述显示装置300相同，区别之处在于，如图5所示，图5为本揭示实施例提供的显示装置400的截面结构示意图，所述显示装置400覆盖层由第一覆盖层415、第二覆盖层416和第三覆盖层417组成，所述第一覆盖层415和所述第二覆盖层416层叠设置于所述发光子区A1内，且所述第一覆盖层415和所述第二覆盖层416的边界与所述发光子区A1的边界保持齐平，所述第三覆盖层417设置于所述外部光透射子区A2内，所述第一覆盖层415和所述第二覆盖层416的厚度之和大于所述第三覆盖层417的厚度。
在所述步骤S30中，分别通过精细金属掩膜板和开放式掩膜板蒸镀形成所述覆盖层。具体地，先通过精细金属掩膜板蒸镀形成第一覆盖层415，再通过开放式掩膜板蒸镀形成所述第二覆盖层416和所述第三覆盖层417。
在一些实施例中，对于像素密度较高的显示装置，则可以采用多张不同的精细金属掩膜板进行蒸镀。所述显示装置包括红色子像素单元、绿色子像素单元和蓝色子像素单元，采用第一精细金属掩膜板蒸镀形成位于所述红色子像素单元上的所述第一覆盖层，采用第二精细金属掩膜板蒸镀形成位于所述绿色子像素单元和所述蓝色子像素单元上的所述第一覆盖层。其中，所述第一精细金属掩膜板在与所述红色子像素单元对应的位置设置有多个第一开口，在与所述绿色子像素单元和所述蓝色子像素单元对应的位置为封闭结构；所述第二精细金属掩膜板在与所述绿色子像素单元和所述蓝色子像素单元对应的位置设置有多个第二开口，在与所述红色子像素单元对应的位置为封闭结构。
本揭示实施例通过保持位于发光子区A1内的第一覆盖层415和第二覆盖层416原有厚度，减薄位于外部光透射子区A2内的第三覆盖层417的厚度，从而保持显示装置400具有原有显示效果的同时，提升外部光透射子区A2的外部光线透过率，从而提升显示装置400的透明显示效果。
综上所述，虽然本揭示以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为基准。

Claims (13)

  1. 一种显示面板，包括：显示区域，所述显示区域包括：发光子区和外部光透射子区；
    所述显示面板包括：
    阳极，所述阳极设置于所述发光子区内；
    发光层，所述发光层设置于所述阳极上，且位于所述发光子区内；
    阴极，所述阴极设置于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域；以及
    覆盖层，所述覆盖层设置于所述阴极远离所述发光层的一侧上，且所述覆盖层至少覆盖所述发光子区。
  2. 如权利要求1所述的显示面板，其中，所述覆盖层仅覆盖所述发光子区。
  3. 如权利要求1所述的显示面板，其中，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
  4. 如权利要求1所述的显示面板，其中，所述显示面板还包括摄像组件，所述摄像组件设置于所述基板远离所述发光层的一侧上。
  5. 一种显示装置，包括显示面板，所述显示面板包括：显示区域，所述显示区域包括：发光子区和外部光透射子区；
    所述显示面板包括：
    阳极，所述阳极设置于所述发光子区内；
    发光层，所述发光层设置于所述阳极上，且位于所述发光子区内；
    阴极，所述阴极设置于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域；以及
    覆盖层，所述覆盖层设置于所述阴极远离所述发光层的一侧上，且所述覆盖层至少覆盖所述发光子区。
  6. 如权利要求5所述的显示面板，其中，所述覆盖层仅覆盖所述发光子区。
  7. 如权利要求5所述的显示面板，其中，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
  8. 如权利要求5所述的显示面板，其中，所述显示面板还包括摄像组件，所述摄像组件设置于所述基板远离所述发光层的一侧上。
  9. 一种显示装置的制作方法，包括：
    提供基板，所述基板包括显示区域，所述显示区域包括：发光子区和外部光透射子区；
    在所述基板上依次形成阳极、像素定义层、发光层和阴极；以及
    在所述阴极远离所述基板的一侧上蒸镀形成覆盖层；
    其中，所述发光层形成于所述阳极远离所述基板的一侧上，所述阴极形成于所述发光层远离所述阳极的一侧上，并覆盖所述显示区域，所述覆盖层至少覆盖所述发光子区。
  10. 如权利要求9所述的制作方法，其中，所述覆盖层仅覆盖所述发光子区。
  11. 如权利要求10所述的制作方法，其中，蒸镀形成所述覆盖层所采用的掩膜板为精细金属掩膜板。
  12. 如权利要求9所述的制作方法，其中，所述覆盖层覆盖所述发光子区和所述外部光透射子区，且位于所述发光子区的所述覆盖层厚度大于位于所述外部光透射子区的所述覆盖层厚度。
  13. 如权利要求12所述的制作方法，其中，分别通过精细金属掩膜板和开放式掩膜板进行蒸镀制程，形成所述覆盖层。
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