WO2023015627A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置 Download PDF

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Publication number
WO2023015627A1
WO2023015627A1 PCT/CN2021/116249 CN2021116249W WO2023015627A1 WO 2023015627 A1 WO2023015627 A1 WO 2023015627A1 CN 2021116249 W CN2021116249 W CN 2021116249W WO 2023015627 A1 WO2023015627 A1 WO 2023015627A1
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WO
WIPO (PCT)
Prior art keywords
layer
blocking portion
display panel
source
organic layer
Prior art date
Application number
PCT/CN2021/116249
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English (en)
French (fr)
Inventor
白丹
赵瑜
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/600,040 priority Critical patent/US11997869B2/en
Publication of WO2023015627A1 publication Critical patent/WO2023015627A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present application relates to the field of display technology, in particular to a display panel and a display device.
  • OLED Organic Light Emitting Display
  • the present application provides a display panel and a display device, so as to alleviate the technical problem existing in existing OLED products that water and oxygen in the outside world are easily conducted inwardly through the light-emitting layer.
  • An embodiment of the present application provides a display panel, which includes a functional area, a display area close to the functional area, and a transition area between the functional area and the display area, and the display panel includes in the transition area :
  • the first organic layer is disposed on the side of the inorganic layer away from the substrate, and the first organic layer is formed with a plurality of first barriers arranged at intervals in the transition region;
  • a first metal layer disposed on a side of the first organic layer away from the inorganic layer, and the first metal layer is formed with a second blocking portion covering the first blocking portion in the transition region;
  • the second blocking portion covers the upper surface and the first side surface of the first blocking portion, and the second blocking portion covering the upper surface of the first blocking portion faces away from the first side surface extending beyond the boundary of the upper surface.
  • the first metal layer is formed with a first source-drain line in the display area
  • the display panel further includes A second metal layer on one side, the first organic layer covers the second metal layer, the second metal layer is formed with a second source and drain line in the display area, and the second source and drain line connected to the first source-drain line through the via hole in the first organic layer.
  • the display panel further includes:
  • a conductive electrode layer disposed on the second organic layer, and a pixel electrode is formed in the display area, and the pixel electrode is connected to the first source-drain line through a via hole in the second organic layer;
  • the pixel definition layer covers part of the pixel electrode and the second organic layer, and forms a pixel opening in the display area.
  • the inorganic layer includes a stacked buffer layer, a gate insulating layer, and an interlayer insulating layer, and the display panel further includes:
  • a semiconductor layer disposed on the buffer layer, including a source region and a drain region;
  • a gate layer disposed on the gate insulating layer
  • the second metal layer is disposed on the interlayer insulating layer, the second source and drain lines include a first source line and a first drain line, and the first source line and the first drain line
  • the electrode lines are respectively connected to the corresponding source region and the drain region through the via holes in the interlayer insulating layer.
  • a retaining wall structure is further provided on the inorganic layer in the transition region, and the retaining wall structure is located on the side of the first barrier part close to the display area , and the retaining wall structure includes a first retaining wall part, a second retaining wall part and a third retaining wall part stacked, wherein the first retaining wall part is formed by the second organic layer, and the second retaining wall part
  • the barrier portion is formed of the pixel definition layer.
  • the included angle between the second side of the first blocking portion not covered by the second blocking portion and the second blocking portion beyond the upper surface is greater than or equal to 90°. Spend.
  • the width of the second barrier portion beyond the upper surface ranges from 1 ⁇ m to 100 ⁇ m.
  • the inorganic layer in the transition region, is provided with corresponding grooves in the region between the adjacent first barrier parts, and the extending direction of the grooves It is the same as the extending direction of the first barrier part.
  • the groove is disposed close to the second side surface of the first blocking portion not covered by the second blocking portion.
  • the groove penetrates at least part of the inorganic layer.
  • the number of the first blocking parts is greater than or equal to five, and there is an interval between two adjacent first blocking parts.
  • the interval distance between every two adjacent first blocking parts is the same.
  • An embodiment of the present application further provides a display device, which includes the display panel of one of the foregoing embodiments and functional elements arranged corresponding to the functional areas of the display panel.
  • the first organic layer of the display panel is formed with a first barrier in the transition region
  • the first metal layer of the display panel is formed with a second barrier in the transition region.
  • the blocking part, the second blocking part covers the upper surface and the first side of the first blocking part, and the second blocking part covered on the upper surface of the first blocking part faces away from the first side
  • the direction extends beyond the boundary of the upper surface to form an undercut structure, so that when the light-emitting layer is prepared, the light-emitting layer will be disconnected at the undercut structure, so as to block the water and oxygen immersion path formed by the light-emitting layer, and solve the problem of Existing OLED products have the problem that external water and oxygen are easily conducted in-plane through the light-emitting layer, which improves the reliability of the transition zone packaging.
  • FIG. 1 is a schematic top view structural diagram of a display panel provided by an embodiment of the present application.
  • Fig. 2 is a schematic cross-sectional structure diagram along line A-A' in Fig. 1.
  • FIG. 3 is a schematic diagram of the detailed structure of the driving circuit layer provided by the embodiment of the present application.
  • FIG. 4 is a detailed schematic diagram of the first barrier part and the second barrier part provided by the embodiment of the present application.
  • FIG. 5 is a schematic flowchart of a method for manufacturing a display panel provided in an embodiment of the present application.
  • 6 to 9 are schematic diagrams of the film layer structure of the display panel produced in each step of the display panel production method provided in the embodiment of the present application.
  • FIG. 1 is a schematic top view structure of a display panel provided by an embodiment of the present application
  • FIG. 2 is a schematic cross-sectional structure diagram along line A-A' in FIG. 1
  • the display panel 100 includes a functional area HA, a display area AA close to the functional area HA, and a transition area TA between the functional area HA and the display area AA.
  • the functional area HA is provided with an opening 200, and functional components such as earpieces, cameras, and various sensors can be placed in the opening 200, so as to realize functions such as an off-screen camera and an off-screen fingerprint, thereby improving the performance of the display panel 100. screen-to-body ratio.
  • the functional area HA can be located in any area of the display panel 100 , for example, the functional area HA can be located in the middle area or edge area of the display panel 100 .
  • the transition area TA is located between the functional area HA and the display area AA. When the functional area HA is located in the middle area of the display panel 100, the transition area TA surrounds the functional area HA; When the functional area HA is located at the edge area of the display panel 100 , the transition area TA half surrounds the functional area HA. Setting the transition area TA can realize a smooth transition from the functional area HA to the display area AA, so as to reduce the influence of the functional area HA on the display area AA.
  • the display panel further includes a substrate, an inorganic layer, a first organic layer, and a first metal layer stacked on the substrate in sequence.
  • the first organic layer is disposed on a side of the inorganic layer away from the substrate, and the first organic layer is formed with a plurality of first barriers arranged at intervals in the transition region.
  • the first metal layer is disposed on a side of the first organic layer away from the inorganic layer, and the first metal layer is formed with a second blocking portion covering the first blocking portion in the transition region.
  • the second blocking portion covers the upper surface and the first side surface of the first blocking portion, and the second blocking portion covering the upper surface of the first blocking portion faces away from the first side surface extending beyond the boundary of the upper surface to form an undercut structure.
  • the light-emitting layer will be disconnected at the undercut structure to block the water and oxygen immersion path formed by the light-emitting layer, and solve the problem that the external water and oxygen existing in existing OLED products are easy to conduct in-plane through the light-emitting layer problem, improving the reliability of the transition zone package.
  • the film layer structure of the display panel 100 in each region will be described in detail below:
  • the display panel 100 includes a substrate 10 , a driving circuit layer 20 , a light emitting function layer 30 and an encapsulation layer 40 sequentially disposed on the substrate 10 .
  • the substrate 10, the driving circuit layer 20, the light-emitting functional layer 30 and the encapsulation layer 40 are hollowed out corresponding to the functional area HA, so as to improve the light extraction rate of the functional components under the screen.
  • the display area AA includes all the film layers on the substrate 10, and the transition area TA is not used for display, then the transition area TA may include part of the film layers on the substrate 10, such as part of the drive
  • the display panel 100 includes a substrate 10 , a driving circuit layer 20 , a light emitting function layer 30 and an encapsulation layer 40 in the display area AA.
  • the substrate 10 may be a rigid substrate or a flexible substrate; when the substrate 10 is a rigid substrate, it may include a rigid substrate such as a glass substrate; when the substrate 10 is a flexible substrate, it may include polyimide Flexible substrates such as polyimide (PI) films and ultra-thin glass films can be used as the substrate 10 to produce a flexible display panel 100 to achieve special properties such as bending and curling of the display panel 100 .
  • PI polyimide
  • the substrate 10 may include alternately stacked flexible films and inorganic films.
  • the substrate 10 includes a stacked first polyimide film, a first inorganic film film, a second polyimide film and a second inorganic film. In this way, while realizing the flexibility of the substrate 10 , the water and oxygen blocking performance of the substrate 10 can also be enhanced.
  • a buffer layer (not shown) may also be provided between the substrate 10 and the driving circuit layer 20, and the material of the buffer layer may include silicon oxide (SiOx), silicon nitride (SiNx), Inorganic materials such as silicon oxynitride (SiON), the buffer layer can further prevent undesirable impurities or pollutants (such as moisture, oxygen, etc.) devices, while also providing a flat top surface.
  • SiOx silicon oxide
  • SiNx silicon nitride
  • SiON silicon oxynitride
  • the buffer layer can further prevent undesirable impurities or pollutants (such as moisture, oxygen, etc.) devices, while also providing a flat top surface.
  • FIG. 3 is a schematic diagram of the detailed structure of the driving circuit layer provided by the embodiment of the present application.
  • the driving circuit layer 20 includes an active layer 21 and a gate insulating layer (such as the first gate insulating layer 11 and the first gate insulating layer shown in FIG. 2 and FIG.
  • the active layer 21 includes a channel region 211 and a source region 212 and a drain region 213 located on two sides of the channel region 211 .
  • the first gate layer 22 includes a first gate 221 and various signal wires
  • the second gate layer 23 includes a second gate 231 and gate scanning lines, etc.
  • the first gate 221 and The second gates 231 are set corresponding to the channel region 211 .
  • the second metal layer 24 is patterned to form second source-drain lines and data lines, etc.
  • the second source-drain lines include first source lines 241 and first drain lines 242, and the first source lines
  • the line 241 is connected to the source region 212 through the via hole of the interlayer insulating layer 13, and the first drain line 242 is connected to the drain region 213 through another via hole of the interlayer insulating layer 13. connect.
  • the first metal layer 25 is patterned to form a first source-drain line and various signal lines, such as VDD, VSS and other signal lines, and the first source-drain line is connected to the second source-drain line.
  • the first source-drain line includes a second source line or a second drain line, taking the second drain line 251 as an example, the second drain line 251 passes through the first organic layer 17 The via hole is connected to the first drain line 242 .
  • the conductive electrode layer 26 is patterned to form a pixel electrode 261, and the pixel electrode 261 is connected to the second drain line 251 through the via hole of the second organic layer 16, wherein the first organic layer 17 and the
  • the second organic layer 16 is a planarization layer, which provides a flat film layer surface for the display panel 100 , so as to improve the stability of preparing the light-emitting functional layer 30 .
  • the pixel definition layer 15 is disposed on the conductive electrode layer 26 and the second organic layer 16, and the pixel definition layer 15 is patterned to form a pixel opening 151, and the pixel opening 151 exposes a part of the pixel electrode 261 to define a light emitting area.
  • the structure of the driving circuit layer 20 of the present application is not limited to that shown in this embodiment, the driving circuit layer 20 of the present application may also include more or fewer film layers, and the positional relationship of each film layer is not limited to As shown in this embodiment, for example, the first gate layer 22 and the second gate layer 23 may also be located under the active layer 21 to form a bottom gate structure.
  • the driving circuit layer 20 is used to provide a driving voltage to the light-emitting functional layer 30 to make the light-emitting functional layer 30 emit light.
  • the luminescent functional layer 30 includes a luminescent material layer and a cathode (not shown).
  • the luminescent material layer is formed by arranging luminescent materials of different colors on the surface of the driving circuit layer 20.
  • the luminescent materials of different colors emit light of different colors. For example, red luminescent materials emit red light, and green luminescent materials emit green light. light, the blue luminescent material emits blue light.
  • the cathode covers the luminescent material layer, and the luminescent material layer emits light under the joint action of the pixel electrode 261 and the cathode, and the luminescent material layers of different colors emit light of different colors, thereby realizing the full display of the display panel 100. color display.
  • the pixel electrode 261 may be a transparent electrode or a reflective electrode. If the pixel electrode 261 is a transparent electrode, the pixel electrode 261 may be made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Formation of ZnO or In2O3. If the pixel electrode 261 is a reflective electrode, the pixel electrode 261 may include, for example, a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a combination thereof and a reflective layer made of ITO , IZO, ZnO or In2O3 layer. However, the pixel electrode 261 is not limited thereto, and the pixel electrode 261 may be formed of various materials, and may also be formed in a single-layer or multi-layer structure.
  • the pixel electrode 261 is a transparent electrode or a reflective electrode depends on the light emitting direction of the display panel 100.
  • the pixel electrode 261 can be a transparent electrode or a reflective electrode.
  • the reflective electrode is used, the utilization rate of light emitted by the luminescent material layer can be improved; when the display panel 100 uses bottom emission, the pixel electrode 261 uses a transparent electrode to increase the transmittance of light.
  • the display panel 100 adopts top emission as an example for illustration.
  • the cathode needs to be formed of a transparent conductive material.
  • the cathode can be formed of transparent conductive oxide (Transparent Conductive Oxide, TCO) such as ITO, IZO, ZnO or In2O3.
  • TCO Transparent Conductive Oxide
  • the light-emitting functional layer 30 may also include a hole injection layer (HIL) and a hole transport layer (HTL) disposed between the light-emitting material layer and the pixel electrode 261; An electron injection layer (EIL) and an electron transport layer (ETL) between the luminescent material layer and the cathode.
  • HIL hole injection layer
  • HTL hole transport layer
  • EIL electron injection layer
  • ETL electron transport layer
  • the hole injection layer receives the holes transported by the pixel electrode 261, the holes are transported to the light-emitting material layer through the hole transport layer, the electron injection layer receives the electrons transported by the cathode, and the electrons are transported to the light-emitting material layer through the electron transport layer, and the holes and electrons Excitons are generated after the positional combination of the light-emitting material layer, and the excitons transition from the excited state to the ground state to release energy and emit light.
  • the encapsulation layer 40 covers the luminescent functional layer 30, and is used to protect the luminescent material layer of the luminescent functional layer 30, and prevent water and oxygen intrusion from causing the luminescent material layer to fail.
  • the encapsulation layer 40 can be encapsulated with a thin film, for example, the encapsulation layer 40 can be a laminated structure formed by sequentially laminating three layers of thin films of a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer or more Multilayer laminated structure.
  • the materials of the first inorganic encapsulation layer and the second inorganic encapsulation layer include one or a combination of inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride, and the first inorganic encapsulation layer and
  • the second inorganic encapsulation layer can be deposited by chemical vapor deposition (Chemical Vapor Deposition, CVD), physical vapor deposition (Physical Vapor Deposition, PVD) or atomic layer deposition (Atomic layer deposition, ALD) and other deposition processes are deposited on the light-emitting functional layer 30 .
  • the material of the organic encapsulation layer includes one or more of organic materials such as epoxy and acrylic, and the organic encapsulation layer can be printed by inkjet (Ink Jet Print, IJP), spray coating and other coating processes are coated on the first inorganic encapsulation layer.
  • inkjet Ink Jet Print, IJP
  • spray coating and other coating processes are coated on the first inorganic encapsulation layer.
  • the specific structure of the display panel 100 in the transition area TA is described below:
  • FIG. 4 is a detailed schematic diagram of the first barrier part and the second barrier part provided by the embodiment of the present application.
  • the display panel 100 includes the substrate 10 in the transition area TA, an inorganic layer 1 disposed on the substrate 10, a plurality of The first blocking portion 51 and the second blocking portion 52 covering the upper surface 511 and the first side surface 512 of the first blocking portion 51 .
  • the second blocking portion 52 covers the upper surface 511 and the first side 512 of the first blocking portion 51, and extends in a direction away from the first side 512 and beyond the boundary of the upper surface 511, That is, the second blocking portion 52 exceeds the installation area of the first blocking portion 51, so that the second blocking portion 52 has a suspended portion 521 relative to the first blocking portion 51, so that the first blocking portion 51
  • An undercut structure is formed together with the second blocking portion 52 , and the suspended portion 521 is also a portion of the second blocking portion 52 protruding from the upper surface of the first blocking portion 51 .
  • the width of the suspended portion 521 ranges from 1 micron to 100 microns.
  • the upper surface 511 of the first barrier portion 51 refers to the side of the first barrier portion 51 away from the inorganic layer 1 , and the surface opposite to the upper surface 511 is the first barrier portion 51
  • the lower surface 513 of the upper surface 511 and the lower surface 513 are the sides of the first blocking portion 51 .
  • the present application defines: the side that forms the undercut structure together with the second blocking portion 52 is the second side 514 of the first blocking portion 51, and the second side 514 is not covered by the second blocking portion 52, then it is the same as
  • the side opposite to the second side 514 is the first side 512 of the first blocking portion 51 , and the first side 512 is covered with the second blocking portion 52 .
  • the second side 514 may be the side of the first blocking portion 51 close to the display area AA, or the side of the first blocking portion 51 facing away from the display area AA, that is, the undercut
  • the structure can be formed on the side of the first blocking portion 51 facing the display area AA or on the side facing away from the display area AA.
  • the second side 514 of the first blocking portion 51 may be an inclined surface, so that the angle a between the second side 514 and the second blocking portion 52 beyond the upper surface 511 is greater than 90 degrees, the included angle a is also the included angle between the second side surface 514 and the suspended portion 521 .
  • the undercut structure formed by the first barrier part 51 and the second barrier part 52 is deeper, and it is easier to break the luminescent material layer at the undercut structure.
  • the first blocking portion 51 is formed by the first organic layer 17
  • the second blocking portion 52 is formed by the first metal layer 25 . That is, the first barrier portion 51 is disposed on the same layer as the first organic layer 17 , and the second barrier portion 52 is disposed on the same layer as the first source-drain line.
  • “Setting in the same layer” in this application means that in the manufacturing process, at least two different features are obtained by patterning the film layer formed of the same material, and the at least two different features are set in the same layer.
  • the first barrier part 51 and the first organic layer 17 in this embodiment are obtained by patterning the same organic material film, then the first barrier part 51 and the first organic layer 17 are the same layer settings.
  • the second barrier part 52 and the first source-drain line are obtained after the first metal layer 25 is patterned, then the second barrier part 52 and the first source-drain line Line same layer setting.
  • the luminescent material layer when the luminescent material layer is arranged on the entire surface, the luminescent material layer will be broken at the corresponding undercut structure, so that all The luminescent material layer in the transition area TA is discontinuous, so as to block the conduction path of water and oxygen along the luminescent material layer to the display area AA.
  • the second barrier part 52 also covers the first side 512 of the first barrier part 51 and extends to the inorganic layer 1, so that the first barrier part 51 and the second barrier part 52 A single-sided undercut structure is formed in one piece, so that the luminescent material layer can only contact with one side (ie, the second side 514) of the same first barrier part 51, that is, the first barrier part 51 is only in the undercut
  • the structure is in contact with the light-emitting material layer, and the upper surface 511 and the first side surface 512 of the first barrier part 51 are covered by the second barrier part 52, so as to block the light-emitting material layer from the first barrier part. 51 , so as to prevent the luminescent material layer from forming a new water-oxygen conduction path with the first blocking portion 51 .
  • the number of the first blocking portions 51 is greater than or equal to five, and there is an interval between two adjacent first blocking portions 51 .
  • a sufficient number of the first blocking portions 51 are provided to form a corresponding number of undercut structures, which can improve the reliability of blocking the water-oxygen conduction path, thereby realizing effective packaging.
  • the spacing distance between every two adjacent first blocking parts 51 is the same, so that the first blocking parts 51 are evenly distributed in the transition area TA, so that the blocked luminescent material layer is also Uniform distribution can achieve better ability to block water and oxygen transmission.
  • the uniform distribution of the first barrier parts 51 is provided, which is more feasible in the process and is conducive to simplifying the process.
  • the inorganic layer is provided with a groove 70 in the area where the first barrier part 51 is not provided.
  • the groove 70 is provided between two adjacent The first barrier parts 51 are spaced on corresponding inorganic layers, and the groove 70 is close to the second side 514 of the first barrier part 51 not covered by the second barrier part 52 .
  • the number of the grooves 70 can be configured according to the number of the first blocking parts 51 or according to actual needs.
  • the groove 70 penetrates at least part of the inorganic layer 1, since the inorganic layer 1 includes the buffer layer, the first gate insulating layer 11, the second gate insulating layer 12 and The interlayer insulating layer 13, so the groove 70 can be disposed on the interlayer insulating layer 13 or penetrate the interlayer insulating layer 13 and extend to the second gate insulating layer 12, the first The gate insulating layer 11 and the buffer layer.
  • the cutting process will be used when the functional area HA is hollowed out, and cracks may occur during cutting.
  • the generated cracks will extend to the display area AA along the inorganic film layer to form a water and oxygen conduction path.
  • the generated cracks are stopped when extending to the groove 70, so that the cracks can be prevented from extending to the display area AA.
  • the groove 70 is disposed close to the second side 514 of the first blocking portion 51, so that the groove 70 can cooperate with the undercut structure to form a deep hole, so that the luminescent material layer Structures are easier to disconnect.
  • a retaining wall structure 60 is also provided on the inorganic layer where the first barrier part 51 is not provided in the transition area TA.
  • the retaining wall structure 60 can also be located between two adjacent In the interval between the first blocking parts 51, the groove 70 may not be provided in the interval provided with the retaining wall structure 60, but the application is not limited to, the retaining wall structure 60 and the groove in the present application 70 may be located within the same interval.
  • the retaining wall structure 60 includes a first retaining wall part 61 , a second retaining wall part 62 and a third retaining wall part 63 arranged in layers, wherein the first retaining wall part 61 is formed by the second inorganic layer 16 , The second retaining wall portion 62 is formed by the pixel definition layer 15, that is, the first retaining wall portion 61 and the second organic layer 16 are arranged on the same layer, and the second retaining wall portion 62 and the The pixel definition layer 15 is set in the same layer.
  • the A plurality of retaining wall structures 60 need to be arranged on the display panel 100 to block the flow of printed organic materials.
  • the retaining wall structure (not shown) in the display area AA acts as the main retaining wall to mainly prevent overflow
  • the retaining wall structure 60 in the transition area TA can serve as a secondary barrier for the slight overflow of inkjet printing The role and the role of a slight anti-crack.
  • an embodiment of the present application further provides a method for manufacturing a display panel, which is used to prepare the display panel in one of the above embodiments.
  • Figure 5 is a schematic flow chart of the display panel manufacturing method provided by the embodiment of the present application
  • Figures 6 to 9 are the film of the display panel produced in each step of the display panel manufacturing method provided by the embodiment of the present application Schematic diagram of the layer structure.
  • the preparation method of the display panel comprises the following steps:
  • Step S301 providing a substrate 10, the substrate 10 is divided into a functional area HA, a transition area TA, and a display area AA, preparing a driving circuit layer 20 on the substrate 10, and forming a first The blocking portion pattern 515 and the second blocking portion 52, as shown in FIG. 6 ;
  • the substrate 10 may be a rigid substrate or a flexible substrate.
  • the substrate 10 may include alternately stacked flexible films and inorganic films.
  • the substrate 10 includes a stacked first polyimide film, a first inorganic film film, a second polyimide film and a second inorganic film. In this way, while realizing the flexibility of the substrate 10 , the water and oxygen blocking performance of the substrate 10 can also be enhanced.
  • a buffer layer may also be provided between the substrate 10 and the driving circuit layer 20, and the driving circuit layer 20 includes active layers sequentially stacked on the buffer layer in the display area AA 21.
  • the conductive electrode layer 26 is connected to the first metal layer 25 through the via hole of the second organic layer 16 .
  • the drive circuit layer 20 includes an inorganic layer 1 formed of a first gate insulating layer 11, a second gate insulating layer 12 and an interlayer insulating layer 13 in both the transition area TA and the functional area HA.
  • the inorganic layer 1 of the transition area TA and the functional area HA may further include the buffer layer.
  • the drive circuit layer 20 is also formed with a plurality of first barrier patterns 515 and second barriers 52 in the transition area TA, and the second barriers 52 cover part of the first barrier patterns 515. surface and the first side surface of the first barrier pattern 515 .
  • the first blocking portion pattern 515 is disposed on the same layer as the first organic layer 17
  • the second blocking portion 52 is disposed on the same layer as the first metal layer 25 .
  • the driving circuit layer 20 further includes a groove 70 disposed on the inorganic layer 1 in the transition area TA, specifically, the groove 70 is disposed between two adjacent first barrier patterns 515 The corresponding intervals are on the inorganic layer 1 , and the groove 70 is close to the second side of the first barrier pattern 515 .
  • the groove 70 and the via hole of the second organic layer 16 are formed in the same process.
  • the driving circuit layer 20 further includes a retaining wall structure 60 disposed on the surface of the inorganic layer 1 in the transition area TA, and the retaining wall structure 60 includes a stacked first retaining wall portion 61, a second retaining wall portion 62 and The third retaining wall portion 63 , wherein the first retaining wall portion 61 is disposed on the same layer as the second organic layer 16 , and the second retaining wall portion 62 is disposed on the same layer as the pixel definition layer 15 .
  • Step S302 performing a yellow light process on the first blocking portion pattern 515 to form a first blocking portion 51, so that the first blocking portion 51 and the second blocking portion 52 form an undercut structure, as shown in FIG. 7 Show;
  • a photoresist is coated on the driving circuit layer 20, and the photoresist is exposed and developed to form a photoresist pattern.
  • a barrier pattern 515 is a photoresist coated on the driving circuit layer 20, and the photoresist is exposed and developed to form a photoresist pattern.
  • the first blocking portion 51 also partially suspends the second blocking portion 52 , so that the first blocking portion 51 and the second blocking portion 52 form an undercut structure.
  • the photoresist pattern is stripped off, exposing the second blocking portion 52 .
  • Step S303 covering the light-emitting functional layer 30 on the driving circuit layer 20, as shown in FIG. 8 ;
  • the entire surface of the driving circuit layer 20 is covered with the light-emitting functional layer 30, and the light-emitting functional layer 30 is disconnected at the undercut structure formed corresponding to the first blocking portion 51 and the second blocking portion 52. .
  • Step S304 setting an encapsulation layer 40 on the light-emitting functional layer 30, as shown in FIG. 9 ;
  • the encapsulation layer 40 can be encapsulated with a thin film, for example, the encapsulation layer 40 can be a laminated structure formed by sequentially laminating three layers of thin films of a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer or more layered structure.
  • Step S305 digging holes in the functional area HA to form openings 200 , as shown in FIG. 2 .
  • a cutting process such as laser cutting may be used to dig holes in the functional area HA to form the opening 200 to form the display panel 100 .
  • the embodiment of the present application also provides a display device, the display device includes electronic devices such as mobile phones and tablets, and the display device includes the display panel of one of the foregoing embodiments and the functions set corresponding to the functional areas of the display panel. element.
  • the functional components include earpieces, cameras, various sensors, etc., to realize functions such as off-screen cameras and off-screen fingerprints.
  • the present application provides a display panel, a display device, and a method for preparing a display panel.
  • the display panel includes a functional area, a display area close to the functional area, and a transition area between the functional area and the display area.
  • the display panel includes a substrate in the transition area.
  • each blocking member includes a first blocking portion and a second blocking portion, the first blocking portion is located at the second blocking portion and the inorganic layer, the second barrier part covers the upper surface of the first barrier part, and the orthographic area of the second barrier part on the substrate is larger than the orthographic area of the first barrier part on the substrate, so that the barrier member An undercut structure is formed.

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Abstract

一种显示面板(100)和显示装置，显示面板(100)的第一有机层(17)在过渡区(TA)形成第一阻隔部(51)，第一金属层(25)在过渡区(TA)形成第二阻隔部(52)，第二阻隔部(52)覆盖第一阻隔部(51)的上表面(511)以及第一侧面(512)，并朝远离第一侧面(512)的方向延伸且超出第一阻隔部(51)上表面(511)的边界，形成底切结构，以缓解现有OLED产品存在的外界水氧容易通过发光层向面内传导的问题。

Description

显示面板和显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板和显示装置。
 背景技术
有机发光二极管显示（Organic Light Emitting Display，OLED）作为新型显示技术，具有其它一些显示技术所无以比拟的诸多优势，如广视角、高对比度、快响应、低功耗和可折叠/柔性等，因而具有强有力的竞争力。
随着OLED技术的广泛发展和应用深入，对具有更优视觉体验的高屏占比(甚至全面屏)显示屏的追求已成为当前显示技术发展的潮流之一，如O-Cut、“美人尖”等技术均极大的提升了显示屏的屏占比，但O-Cut技术受限于在显示区内打孔，打孔设计需要把摄像头区域内的基板全部挖空以形成通孔，如此会导致发光层的侧边暴露，使得外界水氧容易通过该侧边沿发光层向面内传导，存在信赖性差的问题。
因此，现有OLED产品存在的外界水氧容易通过发光层向面内传导的技术问题需要解决。
 技术问题
本申请提供一种显示面板和显示装置，以缓解现有OLED产品存在的外界水氧容易通过发光层向面内传导的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种显示面板，其包括功能区、靠近所述功能区的显示区以及位于所述功能区和所述显示区之间的过渡区，所述显示面板在所述过渡区包括：
衬底；
设置于所述衬底上的无机层；
第一有机层，设置于所述无机层远离所述衬底的一侧，且所述第一有机层在所述过渡区形成有多个间隔设置的第一阻隔部；
第一金属层，设置于所述第一有机层远离所述无机层的一侧，且所述第一金属层在所述过渡区形成有覆盖所述第一阻隔部的第二阻隔部；
其中，所述第二阻隔部覆盖所述第一阻隔部的上表面以及第一侧面，且覆盖在所述第一阻隔部上表面的所述第二阻隔部朝远离所述第一侧面的方向延伸并超出所述上表面的边界。
在本申请实施例提供的显示面板中，所述第一金属层在所述显示区形成有第一源漏极线，所述显示面板还包括设置于所述无机层面向所述第一有机层一侧的第二金属层，所述第一有机层覆盖所述第二金属层，所述第二金属层在所述显示区形成有第二源漏极线，所述第二源漏极线与所述第一源漏极线通过所述第一有机层的过孔连接。
在本申请实施例提供的显示面板中，所述显示面板还包括：
第二有机层，覆于所述第一金属层以及所述第一有机层上；
导电电极层，设置于所述第二有机层上，并在所述显示区形成有像素电极，所述像素电极通过所述第二有机层的过孔与所述第一源漏极线连接；
像素定义层，覆于部分所述像素电极以及所述第二有机层上，并在所述显示区形成有像素开口。
在本申请实施例提供的显示面板中，所述无机层包括层叠设置的缓冲层、栅极绝缘层、层间绝缘层，所述显示面板还包括：
半导体层，设置在所述缓冲层上，包括源极区和漏极区；
栅极层，设置在所述栅极绝缘层上；
所述第二金属层设置于所述层间绝缘层上，所述第二源漏极线包括第一源极线和第一漏极线，所述第一源极线和所述第一漏极线分别通过所述层间绝缘层的过孔与对应的所述源极区和所述漏极区连接。
在本申请实施例提供的显示面板中，在所述过渡区内的所述无机层上还设置有挡墙结构，所述挡墙结构位于所述第一阻隔部靠近所述显示区的一侧，且所述挡墙结构包括层叠设置的第一挡墙部、第二挡墙部以及第三挡墙部，其中所述第一挡墙部由所述第二有机层形成，所述第二挡墙部由所述像素定义层形成。
在本申请实施例提供的显示面板中，所述第一阻隔部未被所述第二阻隔部覆盖的第二侧面与超出所述上表面的所述第二阻隔部的夹角大于或等于90度。
在本申请实施例提供的显示面板中，所述第二阻隔部超出所述上表面的宽度范围为1微米至100微米。
在本申请实施例提供的显示面板中，在所述过渡区内，所述无机层在相邻的所述第一阻隔部之间的区域设置有对应的凹槽，所述凹槽的延伸方向与所述第一阻隔部的延伸方向相同。
在本申请实施例提供的显示面板中，所述凹槽靠近所述第一阻隔部未被所述第二阻隔部覆盖的第二侧面设置。
在本申请实施例提供的显示面板中，所述凹槽至少贯穿部分所述无机层。
在本申请实施例提供的显示面板中，所述第一阻隔部的数量大于或等于5个，相邻两个第一阻隔部之间具有间隔。
在本申请实施例提供的显示面板中，每相邻的两个第一阻隔部之间的所述间隔距离相同。
本申请实施例还提供一种显示装置，其包括前述实施例其中之一的显示面板以及与所述显示面板的功能区对应设置的功能元件。
 有益效果
本申请提供的显示面板和显示装置中，所述显示面板的第一有机层在所述过渡区形成有第一阻隔部，所述显示面板的第一金属层在所述过渡区形成有第二阻隔部，所述第二阻隔部覆盖所述第一阻隔部的上表面以及第一侧面，且覆盖在所述第一阻隔部上表面的所述第二阻隔部朝远离所述第一侧面的方向延伸并超出所述上表面的边界，以形成底切结构，如此在制备发光层时，发光层会在底切结构处断开，以阻断发光层形成的水氧入浸路径，解决了现有OLED产品存在的外界水氧容易通过发光层向面内传导的问题，提高了过渡区封装的可靠性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的显示面板的一种俯视结构示意图。
图2为图1中沿A-A’线的剖面结构示意图。
图3为本申请实施例提供的驱动电路层的细节结构示意图。
图4为本申请实施例提供的第一阻隔部和第二阻隔部的细节示意图。
图5为本申请实施例提供的显示面板制备方法流程示意图。
图6至图9为本申请实施例提供的显示面板制备方法中各步骤制得的显示面板的膜层结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。
请结合参照图1和图2，图1为本申请实施例提供的显示面板的一种俯视结构示意图，图2为图1中沿A-A’线的剖面结构示意图。所述显示面板100包括功能区HA、靠近所述功能区HA的显示区AA以及位于所述功能区HA和所述显示区AA之间的过渡区TA。所述功能区HA设置有开孔200，所述开孔200内可放置听筒、摄像头、各种传感器等功能元件，以实现屏下摄像头、屏下指纹等功能，进而提高所述显示面板100的屏占比。
且根据实际需求，所述功能区HA可位于所述显示面板100的任意区域，比如所述功能区HA可位于所述显示面板100的中间区域或边缘区域。所述过渡区TA位于所述功能区HA和所述显示区AA之间，当所述功能区HA位于所述显示面板100的中间区域时，所述过渡区TA围绕所述功能区HA；当所述功能区HA位于所述显示面板100的边缘区域时，所述过渡区TA半包围所述功能区HA。设置所述过渡区TA可以实现所述功能区HA到所述显示区AA的平稳过渡，以减小所述功能区HA对所述显示区AA的影响。
具体地，所述显示面板还包括衬底、依次层叠设置在所述衬底上的无机层、第一有机层以及第一金属层。第一有机层设置于所述无机层远离所述衬底的一侧，且所述第一有机层在所述过渡区形成有多个间隔设置的第一阻隔部。第一金属层，设置于所述第一有机层远离所述无机层的一侧，且所述第一金属层在所述过渡区形成有覆盖所述第一阻隔部的第二阻隔部。
其中，所述第二阻隔部覆盖所述第一阻隔部的上表面以及第一侧面，且覆盖在所述第一阻隔部上表面的所述第二阻隔部朝远离所述第一侧面的方向延伸并超出所述上表面的边界，以形成底切结构。如此在制备发光层时，发光层会在底切结构处断开，以阻断发光层形成的水氧入浸路径，解决了现有OLED产品存在的外界水氧容易通过发光层向面内传导的问题，提高了过渡区封装的可靠性。
下面将具体阐述所述显示面板100在各区域内的膜层结构：
所述显示面板100包括衬底10、依次设置在所述衬底10上的驱动电路层20、发光功能层30以及封装层40。其中所述衬底10、所述驱动电路层20、所述发光功能层30以及所述封装层40在对应所述功能区HA被挖空，以提高屏下功能元件的光线提取率。所述显示区AA包括所述衬底10上的全部膜层，而所述过渡区TA不用于显示，则所述过渡区TA可包括所述衬底10上的部分膜层，比如部分的驱动电路层20和发光功能层30，同时为了保证所述过渡区TA的有效封装性能，所述过渡区TA可设置与所述显示区AA相同的封装层40。
具体地，所述显示面板100在所述显示区AA包括衬底10、驱动电路层20、发光功能层30以及封装层40。可选地，所述衬底10可以为刚性基板或柔性基板；所述衬底10为刚性基板时，可包括玻璃基板等硬性基板；所述衬底10为柔性基板时，可包括聚酰亚胺（Polyimide，PI）薄膜、超薄玻璃薄膜等柔性基板，采用柔性基板作衬底10可以制作柔性的显示面板100，以实现显示面板100的弯折、卷曲等特殊性能。
以所述衬底10为柔性基板为例，所述衬底10可包括层叠交替设置的柔性薄膜和无机薄膜，比如所述衬底10包括层叠设置的第一聚酰亚胺薄膜、第一无机薄膜、第二聚酰亚胺薄膜以及第二无机薄膜。如此在实现所述衬底10柔性的同时，还可加强所述衬底10的阻水氧性能。
可选地，所述衬底10和所述驱动电路层20之间还可设置缓冲层（图未示），所述缓冲层的材料可包括氧化硅（SiOx）、氮化硅（SiNx）、氮氧化硅（SiON）等无机材料，所述缓冲层可以进一步防止不期望的杂质或污染物（例如湿气、氧气等）从所述衬底10扩散至可能因这些杂质或污染物而受损的器件中，同时还可以提供平坦的顶表面。
请结合参照图2和图3，图3为本申请实施例提供的驱动电路层的细节结构示意图。所述驱动电路层20在所述显示区AA包括依次层叠设置在所述缓冲层上的有源层21、栅极绝缘层（如图2和图3示出的第一栅极绝缘层11和第二栅极绝缘层12）、栅极层（如图2和图3示出的第一栅极层22、第二栅极层23）、层间绝缘层13、第二金属层24、第一有机层17、第一金属层25、第二有机层16、导电电极层26以及像素定义层15，其中所述第一栅极绝缘层11、所述第二栅极绝缘层12以及所述层间绝缘层13一块形成所述无机层1，当然地，所述无机层1还可包括所述缓冲层。
所述有源层21包括沟道区211以及位于所述沟道区211两侧的源极区212和漏极区213。所述第一栅极层22包括第一栅极221以及各种信号走线，所述第二栅极层23包括第二栅极231以及栅极扫描线等，所述第一栅极221和所述第二栅极231均与所述沟道区211对应设置。
所述第二金属层24图案化形成第二源漏极线以及数据线等，所述第二源漏极线包括第一源极线241和第一漏极线242，所述第一源极线241通过所述层间绝缘层13的过孔与所述源极区212连接，所述第一漏极线242通过所述层间绝缘层13的另一过孔与所述漏极区213连接。
所述第一金属层25图案化形成第一源漏极线以及各种信号线，比如VDD、VSS等信号线，所述第一源漏极线与所述第二源漏极线连接。具体地，所述第一源漏极线包括第二源极线或第二漏极线，以第二漏极线251为例，所述第二漏极线251通过所述第一有机层17的过孔与所述第一漏极线242连接。
所述导电电极层26图案化形成像素电极261，所述像素电极261通过所述第二有机层16的过孔与所述第二漏极线251连接，其中所述第一有机层17和所述第二有机层16均为平坦化层，为所述显示面板100提供平坦的膜层表面，以提高制备发光功能层30的稳定性。
所述像素定义层15设置于所述导电电极层26以及所述第二有机层16上，且所述像素定义层15图案化形成有像素开口151，所述像素开口151裸露出部分所述像素电极261，以定义出发光区域。
需要说明的是，本申请驱动电路层20的结构不限于本实施例示意的，本申请的驱动电路层20还可包括更多或更少的膜层，且各膜层的位置关系也不限于本实施例示意的，比如第一栅极层22和第二栅极层23还可位于所述有源层21的下方，形成底栅结构。所述驱动电路层20用于给所述发光功能层30提供驱动电压，以使所述发光功能层30发光。
所述发光功能层30包括发光材料层以及阴极（图未示）。所述发光材料层是把不同颜色的发光材料整面设置在所述驱动电路层20的表面形成，不同颜色的发光材料发射不同颜色的光，比如红色发光材料发射红光，绿色发光材料发射绿光，蓝色发光材料发射蓝光。
所述阴极覆盖所述发光材料层，所述发光材料层在所述像素电极261和所述阴极的共同作用下发光，不同颜色的发光材料层发射不同颜色的光，进而实现显示面板100的全彩显示。
可选地，所述像素电极261可以是透明电极或反射电极，如果所述像素电极261是透明电极，则所述像素电极261可以由例如氧化铟锡(ITO)、氧化铟锌(IZO)、ZnO或In2O3 形成。如果所述像素电极261是反射电极，则所述像素电极261例如可以包括由Ag、Mg、Al、Pt、Pd、Au、Ni、Nd、Ir、Cr或它们的组合形成的反射层以及由 ITO、IZO、ZnO或In2O3形成的层。然而，像素电极261不限于此，像素电极261可以由各种材料形成，并且也可以形成为单层或多层结构。
需要说明的是，所述像素电极261具体是采用透明电极还是反射电极需取决于所述显示面板100的出光方向，当显示面板100采用顶发光时，所述像素电极261可以是透明电极或反射电极，当然地，采用反射电极时能够提高发光材料层发出光线的利用率；当显示面板100采用底发光时，所述像素电极261采用透明电极，以提高光线的透过率。本实施例以所述显示面板100采用顶发光为例说明，为了提高光线的透过率，所述阴极需采用透明导电材料形成。例如所述阴极可由ITO、IZO、ZnO或In2O3等透明导电氧化物（Transparent Conductive Oxide，TCO）形成。
可选地，所述发光功能层30还可包括设置于所述发光材料层与所述像素电极261之间的空穴注入层(HIL)、空穴传输层(HTL)；以及设置于所述发光材料层与所述阴极之间的电子注入层(EIL)、电子传输层(ETL)。空穴注入层接收像素电极261传输的空穴，空穴经由空穴传输层传输至发光材料层，电子注入层接收阴极传输的电子，电子经由电子传输层传输至发光材料层，空穴和电子在发光材料层位置结合后产生激子，激子由激发态跃迁至基态释放能量并发光。
所述封装层40覆盖所述发光功能层30，用于保护所述发光功能层30的发光材料层，避免水氧入侵导致发光材料层失效。
可选地，所述封装层40可采用薄膜封装，比如所述封装层40可以为由第一无机封装层、有机封装层、第二无机封装层三层薄膜依次层叠形成的叠层结构或更多层的叠层结构。其中，所述第一无机封装层和第二无机封装层的材料包括氧化硅、氮化硅和氮氧化硅等无机材料中的一种或几种的组合，且所述第一无机封装层和第二无机封装层均可采用化学气相沉积法(Chemical Vapor Deposition，CVD)、物理气相沉积法(Physical Vapor Deposition，PVD)或原子层沉积法(Atomic layer deposition，ALD)等沉积工艺沉积在所述发光功能层30上。所述有机封装层的材料包括环氧系和丙烯酸系等有机材料中的一种或几种，所述有机封装层可通过喷墨打印（Ink jet Print，IJP）、喷涂等涂布工艺中的一种涂覆在所述第一无机封装层上。
下面接着阐述所述显示面板100在所述过渡区TA的具体结构：
请结合参照图1至图4，图4为本申请实施例提供的第一阻隔部和第二阻隔部的细节示意图。所述显示面板100在所述过渡区TA包括所述衬底10、设置于所述衬底10上的无机层1、间隔设置于所述无机层1远离所述衬底10一侧的多个第一阻隔部51以及覆盖所述第一阻隔部51的上表面511和第一侧面512的第二阻隔部52。
具体地，所述第二阻隔部52覆盖所述第一阻隔部51的上表面511和第一侧面512，并朝远离所述第一侧面512的方向延伸并超出所述上表面511的边界，也即所述第二阻隔部52超出所述第一阻隔部51的设置区域，使所述第二阻隔部52相对于所述第一阻隔部51具有悬空部521，以使第一阻隔部51和所述第二阻隔部52一块形成底切结构，所述悬空部521也即所述第二阻隔部52超出所述第一阻隔部51上表面的部分。其中所述悬空部521的宽度范围为1微米至100微米。
需要说明的是，所述第一阻隔部51的上表面511是指所述第一阻隔部51远离所述无机层1的一面，与所述上表面511相对的为所述第一阻隔部51的下表面513，介于所述上表面511和所述下表面513之间的为所述第一阻隔部51的侧面。本申请定义：与所述第二阻隔部52一块形成底切结构的侧面为所述第一阻隔部51的第二侧面514，第二侧面514未被所述第二阻隔部52覆盖，则与所述第二侧面514相对的侧面即为所述第一阻隔部51的第一侧面512，所述第一侧面512覆盖有所述第二阻隔部52。其中所述第二侧面514可以是所述第一阻隔部51靠近所述显示区AA的侧面，也可以是所述第一阻隔部51背离所述显示区AA的侧面，也即所述底切结构可以形成于所述第一阻隔部51面向显示区AA的一侧或背离所述显示区AA的一侧。
另外，可选地，所述第一阻隔部51的第二侧面514可为倾斜面，使得所述第二侧面514与超出所述上表面511的所述第二阻隔部52的夹角a大于90度，夹角a也即所述第二侧面514与所述悬空部521的夹角。如此使所述第一阻隔部51和所述第二阻隔部52形成的底切结构更深，更容易使所述发光材料层在所述底切结构处断开。
进一步地，所述第一阻隔部51由所述第一有机层17形成，所述第二阻隔部52有所述第一金属层25形成。也即所述第一阻隔部51与所述第一有机层17同层设置，所述第二阻隔部52与所述第一源漏极线同层设置。本申请中的“同层设置”是指在制备工艺中，将相同材料形成的膜层进行图案化处理得到至少两个不同的特征，则所述至少两个不同的特征同层设置。比如，本实施例的所述第一阻隔部51与所述第一有机层17由同一有机材料薄膜进行图案化处理后得到，则所述第一阻隔部51与所述第一有机层17同层设置。又比如，所述第二阻隔部52与所述第一源漏极线由所述第一金属层25进行图案化处理后得到，则所述第二阻隔部52与所述第一源漏极线同层设置。
由于所述第一阻隔部51和所述第二阻隔部52一块形成有底切结构，如此在整面设置发光材料层时，发光材料层会在对应所述底切结构处断开，使得所述过渡区TA的发光材料层是不连续的，以阻断水氧沿所述发光材料层向所述显示区AA传导的路径。
同时，所述第二阻隔部52还覆盖所述第一阻隔部51的第一侧面512，并延伸至所述无机层1上，使所述第一阻隔部51和所述第二阻隔部52一块形成单侧底切结构，如此所述发光材料层只能与同一所述第一阻隔部51的一个侧面（即第二侧面514）接触，也即所述第一阻隔部51只在底切结构处与发光材料层接触，而在所述第一阻隔部51的上表面511和第一侧面512均有第二阻隔部52覆盖，以阻断所述发光材料层与所述第一阻隔部51接触，如此可避免发光材料层与所述第一阻隔部51形成新的水氧传导路径。
可选地，所述第一阻隔部51的数量大于或等于5个，相邻两个第一阻隔部51之间具有间隔。设置足够数量的所述第一阻隔部51，以形成对应数量的底切结构，如此可提高阻断水氧传导路径的可靠性，进而实现有效封装。
可选地，每相邻的两个第一阻隔部51之间的所述间隔距离相同，使得所述第一阻隔部51在所述过渡区TA均匀分布，如此使阻断的发光材料层也均匀分布，可实现更好的阻隔水氧传导的能力。同时设置均匀分布的第一阻隔部51，在工艺上的可实施性更强，有利于简化工艺。
进一步地，在所述过渡区TA内，所述无机层在未设置所述第一阻隔部51的区域设置有凹槽70，可选地，所述凹槽70设置在相邻两个所述第一阻隔部51之间间隔对应的无机层上，且所述凹槽70靠近所述第一阻隔部51未被所述第二阻隔部52覆盖的第二侧面514。所述凹槽70的数量可根据所述第一阻隔部51的数量或根据实际需求进行配置。
可选地，所述凹槽70贯穿至少部分所述无机层1，由于所述无机层1包括所述缓冲层、所述第一栅极绝缘层11、所述第二栅极绝缘层12以及所述层间绝缘层13，故所述凹槽70可设置在所述层间绝缘层13或贯穿所述层间绝缘层13并延伸到所述第二栅极绝缘层12、所述第一栅极绝缘层11以及所述缓冲层。
需要说明的是，为了保证所述过渡区TA的有效封装，所述过渡区TA存在诸多的无机膜层，而在所述功能区HA挖空时会采用切割工艺，切割时可能会产生裂纹，产生的裂纹会沿着无机膜层向所述显示区AA延伸，以形成水氧传导路径。本申请通过在所述过渡区TA的无机层上设置凹槽70，使产生的裂纹延伸到所述凹槽70时截止，能够避免裂纹向所述显示区AA延伸。
而且，所述凹槽70靠近所述第一阻隔部51的第二侧面514设置，如此所述凹槽70可配合所述底切结构，以形成深孔，使所述发光材料层在底切结构处更容易断开。
进一步地，在所述过渡区TA内未设置所述第一阻隔部51的所述无机层上还设置有挡墙结构60，当然地，所述挡墙结构60也可以位于相邻两个所述第一阻隔部51之间的间隔内，设置有挡墙结构60的间隔内可不再设置所述凹槽70，但本申请不限于，本申请的所述挡墙结构60和所述凹槽70可位于同一间隔内。
所述挡墙结构60包括层叠设置的第一挡墙部61、第二挡墙部62以及第三挡墙部63，其中所述第一挡墙部61由所述第二无机层16形成，所述第二挡墙部62由所述像素定义层15形成，也即所述第一挡墙部61与所述第二有机层16同层设置，所述第二挡墙部62与所述像素定义层15同层设置。
需要说明的是，在制备所述封装层40中的有机封装层40时，通过会采用喷墨打印等工艺制备，而打印的有机材料具有流动性，为了防止喷墨打印溢流过多，所述显示面板100上还需设置多个挡墙结构60，以阻挡打印的有机材料的流动。其中所述显示区AA的挡墙结构（图未示）作为主挡墙起主要阻挡溢流作用，所述过渡区TA的挡墙结构60可对喷墨打印略微溢流时起到二次阻挡作用以及轻微防裂纹的作用。
基于同一发明构思，本申请实施例还提供一种显示面板制备方法，用于制备上述实施例其中之一的显示面板。请参照图1至图9，图5为本申请实施例提供的显示面板制备方法流程示意图，图6至图9为本申请实施例提供的显示面板制备方法中各步骤制得的显示面板的膜层结构示意图。所述显示面板制备方法包括以下步骤：
步骤S301、提供衬底10，所述衬底10划分为功能区HA、过渡区TA以及显示区AA，在所述衬底10上制备驱动电路层20，并在所述过渡区TA形成第一阻隔部图案515和第二阻隔部52，如图6所示；
具体地，所述衬底10可以为刚性基板或柔性基板。以所述衬底10为柔性基板为例，所述衬底10可包括层叠交替设置的柔性薄膜和无机薄膜，比如所述衬底10包括层叠设置的第一聚酰亚胺薄膜、第一无机薄膜、第二聚酰亚胺薄膜以及第二无机薄膜。如此在实现所述衬底10柔性的同时，还可加强所述衬底10的阻水氧性能。
可选地，所述衬底10和所述驱动电路层20之间还可设置缓冲层，所述驱动电路层20在所述显示区AA包括依次层叠设置在所述缓冲层上的有源层21、第一栅极绝缘层11、第一栅极层22、第二栅极绝缘层12、第二栅极层23、层间绝缘层13、第二金属层24、第一有机层17、第一金属层25、第二有机层16、导电电极层26以及像素定义层15。所述导电电极层26通过所述第二有机层16的过孔与所述第一金属层25连接。
所述驱动电路层20在所述过渡区TA和所述功能区HA均包括由第一栅极绝缘层11、第二栅极绝缘层12以及层间绝缘层13形成的无机层1，当然地，所述过渡区TA和所述功能区HA的无机层1还可包括所述缓冲层。
同时所述驱动电路层20在所述过渡区TA还形成有多个第一阻隔部图案515和第二阻隔部52，所述第二阻隔部52覆盖所述第一阻隔部图案515的部分上表面以及所述第一阻隔部图案515的第一侧面。所述第一阻隔部图案515和所述第一有机层17同层设置，所述第二阻隔部52和所述第一金属层25同层设置。
所述驱动电路层20在所述过渡区TA还包括设置在所述无机层1上的凹槽70，具体地，所述凹槽70设置在相邻两个所述第一阻隔部图案515之间间隔对应的无机层1上，且所述凹槽70靠近所述第一阻隔部图案515的第二侧面。所述凹槽70与所述第二有机层16的过孔在同一工艺下形成。
所述驱动电路层20在所述过渡区TA还包括设置在无机层1表面的挡墙结构60，所述挡墙结构60包括层叠设置的第一挡墙部61、第二挡墙部62以及第三挡墙部63，其中所述第一挡墙部61与所述第二有机层16同层设置，所述第二挡墙部62与所述像素定义层15同层设置。
步骤S302、对所述第一阻隔部图案515进行黄光工艺，以形成第一阻隔部51，使所述第一阻隔部51和所述第二阻隔部52形成底切结构，如图7所示；
具体地，在所述驱动电路层20上涂覆光阻，并对所述光阻进行曝光、显影形成光阻图案，所述光阻图案裸露出未被所述第二阻隔部52遮挡的第一阻隔部图案515。
以所述光阻图案为遮挡对裸露的所述第一阻隔部图案515进行干蚀刻，直至裸露出所述层间绝缘层13，然后接着对所述第一阻隔部图案515进行侧刻以形成第一阻隔部51，同时使所述第二阻隔部52部分悬空，进而使所述第一阻隔部51和所述第二阻隔部52形成底切结构。
剥离掉光阻图案，裸露出所述第二阻隔部52。
步骤S303、在所述驱动电路层20上覆盖发光功能层30，如图8所示；
具体地，在所述驱动电路层20上整面覆盖发光功能层30，所述发光功能层30在对应所述第一阻隔部51和所述第二阻隔部52形成的底切结构处断开。
步骤S304、在所述发光功能层30上设置封装层40，如图9所示；
具体地，所述封装层40可采用薄膜封装，比如所述封装层40可以为由第一无机封装层、有机封装层、第二无机封装层三层薄膜依次层叠形成的叠层结构或更多层的叠层结构。
步骤S305、在所述功能区HA挖孔以形成开孔200，如图2所示。
具体地，可采用激光切割等切割工艺在所述功能区HA挖孔形成开孔200，以形成所述显示面板100。
本申请实施例还提供一种显示装置，所述显示装置包括手机、平板等电子设备，所述显示装置包括前述实施例其中之一的显示面板以及与所述显示面板的功能区对应设置的功能元件。所述功能元件包括听筒、摄像头、各种传感器等，以实现屏下摄像头、屏下指纹等功能。
根据上述实施例可知：
本申请提供一种显示面板、显示装置以及显示面板制备方法，该显示面板包括功能区、靠近功能区的显示区以及位于功能区和显示区之间的过渡区，显示面板在过渡区包括衬底、设置于衬底上的无机层以及设置于无机层远离衬底一侧的至少一个阻隔构件，每个阻隔构件均包括第一阻隔部和第二阻隔部，第一阻隔部位于第二阻隔部和无机层之间，第二阻隔部覆盖第一阻隔部的上表面，且第二阻隔部在衬底上的正投影面积大于第一阻隔部在衬底上的正投影面积，以使阻隔构件形成底切结构，如此制备发光层时，使得发光层在阻隔构件的底切结构处断开，以阻断发光层形成的水氧入浸路径，解决了现有OLED产品存在的外界水氧容易通过发光层向面内传导的问题。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板，其包括功能区、靠近所述功能区的显示区以及位于所述功能区和所述显示区之间的过渡区，所述显示面板还包括：
    衬底；
    无机层，设置于所述衬底一侧；
    第一有机层，设置于所述无机层远离所述衬底的一侧，且所述第一有机层在所述过渡区形成有多个间隔设置的第一阻隔部；
    第一金属层，设置于所述第一有机层远离所述无机层的一侧，且所述第一金属层在所述过渡区形成有覆盖所述第一阻隔部的第二阻隔部；
    其中，所述第二阻隔部覆盖所述第一阻隔部的上表面以及第一侧面，且覆盖在所述第一阻隔部上表面的所述第二阻隔部朝远离所述第一侧面的方向延伸并超出所述上表面的边界。
  2. 根据权利要求1所述的显示面板，其中，所述第一金属层在所述显示区形成有第一源漏极线，所述显示面板还包括设置于所述无机层面向所述第一有机层一侧的第二金属层，所述第一有机层覆盖所述第二金属层，所述第二金属层在所述显示区形成有第二源漏极线，所述第二源漏极线与所述第一源漏极线通过所述第一有机层的过孔连接。
  3. 根据权利要求2所述的显示面板，其中，所述显示面板还包括：
    第二有机层，覆于所述第一金属层以及所述第一有机层上；
    导电电极层，设置于所述第二有机层上，并在所述显示区形成有像素电极，所述像素电极通过所述第二有机层的过孔与所述第一源漏极线连接；
    像素定义层，覆于部分所述像素电极以及所述第二有机层上，并在所述显示区形成有像素开口。
  4. 根据权利要求3所述的显示面板，其中，所述无机层包括层叠设置的缓冲层、栅极绝缘层、层间绝缘层，所述显示面板还包括：
    半导体层，设置在所述缓冲层上，包括源极区和漏极区；
    栅极层，设置在所述栅极绝缘层上；
    所述第二金属层设置于所述层间绝缘层上，所述第二源漏极线包括第一源极线和第一漏极线，所述第一源极线和所述第一漏极线分别通过所述层间绝缘层的过孔与对应的所述源极区和所述漏极区连接。
  5. 根据权利要求3所述的显示面板，其中，在所述过渡区内的所述无机层上还设置有挡墙结构，所述挡墙结构位于所述第一阻隔部靠近所述显示区的一侧，且所述挡墙结构包括层叠设置的第一挡墙部、第二挡墙部以及第三挡墙部，其中所述第一挡墙部由所述第二有机层形成，所述第二挡墙部由所述像素定义层形成。
  6. 根据权利要求1所述的显示面板，其中，所述第一阻隔部未被所述第二阻隔部覆盖的第二侧面与超出所述上表面的所述第二阻隔部的夹角大于或等于90度。
  7. 根据权利要求6所述的显示面板，其中，所述第二阻隔部超出所述上表面的宽度范围为1微米至100微米。
  8. 根据权利要求1所述的显示面板，其中，在所述过渡区内，所述无机层在相邻的所述第一阻隔部之间的区域设置有对应的凹槽，所述凹槽的延伸方向与所述第一阻隔部的延伸方向相同。
  9. 根据权利要求8所述的显示面板，其中，所述凹槽靠近所述第一阻隔部未被所述第二阻隔部覆盖的第二侧面设置。
  10. 根据权利要求9所述的显示面板，其中，所述凹槽至少贯穿部分所述无机层。
  11. 根据权利要求1所述的显示面板，其中，所述第一阻隔部的数量大于或等于5个，相邻两个第一阻隔部之间具有间隔。
  12. 根据权利要求11所述的显示面板，其中，每相邻的两个第一阻隔部之间的所述间隔距离相同。
  13. 一种显示装置，其包括显示面板和功能元件，所述显示面板包括功能区、靠近所述功能区的显示区以及位于所述功能区和所述显示区之间的过渡区，所述功能元件对应所述功能区设置，所述显示面板还包括：
    衬底；
    无机层，设置于所述衬底一侧；
    第一有机层，设置于所述无机层远离所述衬底的一侧，且所述第一有机层在所述过渡区形成有多个间隔设置的第一阻隔部；
    第一金属层，设置于所述第一有机层远离所述无机层的一侧，且所述第一金属层在所述过渡区形成有覆盖所述第一阻隔部的第二阻隔部；
    其中，所述第二阻隔部覆盖所述第一阻隔部的上表面以及第一侧面，且覆盖在所述第一阻隔部上表面的所述第二阻隔部朝远离所述第一侧面的方向延伸并超出所述上表面的边界。
  14. 根据权利要求13所述的显示装置，其中，所述第一金属层在所述显示区形成有第一源漏极线，所述显示面板还包括设置于所述无机层面向所述第一有机层一侧的第二金属层，所述第一有机层覆盖所述第二金属层，所述第二金属层在所述显示区形成有第二源漏极线，所述第二源漏极线与所述第一源漏极线通过所述第一有机层的过孔连接。
  15. 根据权利要求14所述的显示装置，其中，所述显示面板还包括：
    第二有机层，覆于所述第一金属层以及所述第一有机层上；
    导电电极层，设置于所述第二有机层上，并在所述显示区形成有像素电极，所述像素电极通过所述第二有机层的过孔与所述第一源漏极线连接；
    像素定义层，覆于部分所述像素电极以及所述第二有机层上，并在所述显示区形成有像素开口。
  16. 根据权利要求15所述的显示装置，其中，所述无机层包括层叠设置的缓冲层、栅极绝缘层、层间绝缘层，所述显示面板还包括：
    半导体层，设置在所述缓冲层上，包括源极区和漏极区；
    栅极层，设置在所述栅极绝缘层上；
    所述第二金属层设置于所述层间绝缘层上，所述第二源漏极线包括第一源极线和第一漏极线，所述第一源极线和所述第一漏极线分别通过所述层间绝缘层的过孔与对应的所述源极区和所述漏极区连接。
  17. 根据权利要求15所述的显示装置，其中，在所述过渡区内的所述无机层上还设置有挡墙结构，所述挡墙结构位于所述第一阻隔部靠近所述显示区的一侧，且所述挡墙结构包括层叠设置的第一挡墙部、第二挡墙部以及第三挡墙部，其中所述第一挡墙部由所述第二有机层形成，所述第二挡墙部由所述像素定义层形成。
  18. 根据权利要求13所述的显示装置，其中，所述第一阻隔部未被所述第二阻隔部覆盖的第二侧面与超出所述上表面的所述第二阻隔部的夹角大于或等于90度。
  19. 根据权利要求13所述的显示装置，其中，在所述过渡区内，所述无机层在相邻的所述第一阻隔部之间的区域设置有对应的凹槽，所述凹槽的延伸方向与所述第一阻隔部的延伸方向相同。
  20. 根据权利要求13所述的显示装置，其中，所述第一阻隔部的数量大于或等于5个，相邻两个第一阻隔部之间具有间隔。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114220821B (zh) * 2021-12-13 2023-07-25 武汉华星光电半导体显示技术有限公司 显示面板
CN114464754B (zh) * 2022-01-25 2023-05-12 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN114899334A (zh) * 2022-03-23 2022-08-12 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN115117280B (zh) * 2022-06-30 2023-08-22 武汉华星光电半导体显示技术有限公司 一种显示面板
CN115207246B (zh) * 2022-07-14 2023-06-06 武汉华星光电半导体显示技术有限公司 显示面板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090178A1 (en) * 2002-11-12 2004-05-13 Feng-Ju Chuang Organic electro-luminescent device
CN106887523A (zh) * 2015-11-20 2017-06-23 三星显示有限公司 有机发光显示器及其制造方法
CN107579171A (zh) * 2017-08-31 2018-01-12 京东方科技集团股份有限公司 有机电致发光显示基板及其制作方法、显示装置
CN110416435A (zh) * 2019-08-28 2019-11-05 武汉天马微电子有限公司 有机发光显示面板和显示装置
CN110600526A (zh) * 2019-09-30 2019-12-20 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113066932A (zh) * 2020-01-02 2021-07-02 合肥维信诺科技有限公司 显示装置、显示面板及显示面板的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108666347B (zh) * 2018-04-26 2021-07-30 上海天马微电子有限公司 显示面板及其制造方法、显示装置
CN110224006B (zh) * 2019-05-13 2021-06-01 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
CN110265583B (zh) * 2019-07-26 2022-08-12 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN211719594U (zh) * 2020-02-21 2020-10-20 京东方科技集团股份有限公司 一种显示面板和显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090178A1 (en) * 2002-11-12 2004-05-13 Feng-Ju Chuang Organic electro-luminescent device
CN106887523A (zh) * 2015-11-20 2017-06-23 三星显示有限公司 有机发光显示器及其制造方法
CN107579171A (zh) * 2017-08-31 2018-01-12 京东方科技集团股份有限公司 有机电致发光显示基板及其制作方法、显示装置
CN110416435A (zh) * 2019-08-28 2019-11-05 武汉天马微电子有限公司 有机发光显示面板和显示装置
CN110600526A (zh) * 2019-09-30 2019-12-20 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113066932A (zh) * 2020-01-02 2021-07-02 合肥维信诺科技有限公司 显示装置、显示面板及显示面板的制造方法

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