WO2020191891A1 - 有机发光二极管显示装置及其制造方法、电子设备 - Google Patents

有机发光二极管显示装置及其制造方法、电子设备 Download PDF

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Publication number
WO2020191891A1
WO2020191891A1 PCT/CN2019/086953 CN2019086953W WO2020191891A1 WO 2020191891 A1 WO2020191891 A1 WO 2020191891A1 CN 2019086953 W CN2019086953 W CN 2019086953W WO 2020191891 A1 WO2020191891 A1 WO 2020191891A1
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WO
WIPO (PCT)
Prior art keywords
isolation portion
light emitting
layer
organic light
emitting diode
Prior art date
Application number
PCT/CN2019/086953
Other languages
English (en)
French (fr)
Inventor
张明
杨杰
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/495,402 priority Critical patent/US11282904B2/en
Publication of WO2020191891A1 publication Critical patent/WO2020191891A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • This application relates to the field of display technology, and in particular to an organic light emitting diode display device, a manufacturing method thereof, and electronic equipment.
  • OLED Organic Light-Emitting Diode
  • mobile phones For display devices such as mobile phones, increasing their screen-to-body ratio to improve their appearance has become a mainstream design.
  • mobile phones In addition to the display area for display, mobile phones also need components such as a camera, earpiece, and microphone to realize functions such as taking pictures and voice calls.
  • the camera, earpiece, and microphone reduce the screen-to-body ratio of the mobile phone.
  • laser cutting technology to realize an under-screen camera is one of the methods to increase the screen-to-body ratio.
  • laser cutting technology will cause the reliability of its packaging to deteriorate, thereby affecting the display effect of the organic light emitting diode display device.
  • the purpose of the present application is to provide an organic light emitting diode display device, a manufacturing method thereof, and electronic equipment.
  • the organic light emitting diode display device has a high screen-to-body ratio and good packaging reliability.
  • An organic light emitting diode display device comprising:
  • a substrate having a hollow area, a display area located on the periphery of the hollow area, and a non-display area between the hollow area and the display area;
  • the isolation portion is disposed on the substrate of the non-display area, and the isolation portion is used to isolate the first light-emitting device layer and the second light-emitting device layer;
  • a light-emitting device layer includes the first light-emitting device layer and the second light-emitting device layer, the first light-emitting device layer is formed on the side of the isolation portion close to the display area On the substrate, the second light emitting device layer is formed on the substrate on the side of the isolation portion close to the hollow area;
  • An encapsulation layer covering the light emitting device layer, the isolation portion and the substrate;
  • a through hole is located in the hollow area and penetrates the substrate, the second light emitting device layer and the packaging layer.
  • the isolation portion includes a first isolation portion and a second isolation portion, the first isolation portion is located on a side close to the display area, and the second isolation portion is located close to the One side of the through hole.
  • the distance between the first isolation portion and the second isolation portion is greater than 100 micrometers.
  • the organic light-emitting diode display device further includes a blocking portion disposed on the substrate of the non-display area, and the blocking portion and the isolation portion are disposed in the same layer and located in the same layer. Between the first isolation portion and the second isolation portion, the height of the blocking portion is smaller than the height of the first isolation portion and the second isolation portion.
  • the blocking parts there are a plurality of the blocking parts, and the plurality of blocking parts are alternately arranged between the first isolation part and the second isolation part.
  • the longitudinal section of the blocking portion is at least one of a triangle, a semicircle, a trapezoid, a rectangle, or an irregular pattern.
  • the encapsulation layer includes an inorganic layer, and the inorganic layer covers the light emitting device layer, the isolation portion, and the substrate.
  • the inorganic layer is formed by atomic layer deposition or atomic layer implantation.
  • the longitudinal section of the isolation portion is an inverted trapezoid.
  • a manufacturing method of an organic light emitting diode display device includes the following steps:
  • the substrate having a hollow area, a display area located at the periphery of the hollow area, and a non-display area between the hollow area and the display area;
  • a light-emitting device layer is formed on the substrate, the light-emitting device layer includes the first light-emitting device layer and the second light-emitting device layer, and the first light-emitting device layer is formed at the isolation portion close to the display On the substrate on the side of the region, the second light emitting device layer is formed on the substrate on the side of the isolation portion close to the hollow region;
  • a through hole penetrating through the substrate, the second light emitting device layer and the packaging layer is formed in the hollow area.
  • the isolation portion includes a first isolation portion and a second isolation portion, the first isolation portion is located on a side close to the display area, and the second isolation portion is located Close to the side of the through hole.
  • the distance between the first isolation portion and the second isolation portion is greater than 100 micrometers.
  • the manufacturing method further includes: forming a barrier portion between the first isolation portion and the second isolation portion, and the barrier portion is in the same layer as the isolation portion Is arranged and located between the first isolation portion and the second isolation portion, and the height of the blocking portion is smaller than the height of the first isolation portion and the second isolation portion.
  • the longitudinal section of the blocking portion is at least one of a triangle, a semicircle, a trapezoid, a rectangle, or an irregular pattern.
  • the manufacturing method further includes: forming a first inorganic insulating layer covering the light emitting device layer, the isolation portion, and the substrate.
  • the first inorganic insulating layer is formed by atomic layer deposition or atomic layer implantation.
  • the longitudinal section of the isolation portion is an inverted trapezoid.
  • An electronic device comprising the above-mentioned organic light emitting diode display device and a camera, the camera being embedded in the through hole of the organic light emitting diode display device.
  • the present application provides an organic light-emitting diode display device, a manufacturing method thereof, and electronic equipment.
  • the first light-emitting device layer located on the side of the isolation portion close to the display area and the second light-emitting device located on the side of the isolation portion close to the through hole are provided by the isolation portion.
  • the layers are isolated, and then the encapsulation layer is used to cover the light-emitting device layer, the isolation part and the substrate so that the organic light-emitting diode display device has a high screen-to-body ratio and good packaging reliability.
  • FIG. 1 is a top view of an organic light emitting diode display device according to an embodiment of the application
  • FIG. 2 is a first cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG. 1;
  • FIG. 3 is a top view of an isolation part in the organic light emitting diode display device shown in FIG. 2;
  • FIG. 4 is a second cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG. 1;
  • FIG. 5 is a third cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG. 1;
  • Figure 6 is a fourth cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in Figure 1;
  • FIG. 7 is a flowchart of a manufacturing method of an organic light emitting diode display device according to an embodiment of the application.
  • FIG. 1 is a top view of an organic light emitting diode display device according to an embodiment of the application.
  • the organic light emitting diode display device has a hollow area 100a, a display area 100b, and a non-display area 100c.
  • the display area 100b is used for displaying images, and the display area 100b is located at the periphery of the hollow area 100a.
  • the hollow area 100a may be located in the middle of the display area 100b or at the corner of the display area 100b.
  • the hollow area 100a has a through hole 100d that penetrates the thickness direction of the organic light emitting diode display device.
  • the organic light emitting diode display device realizes a high screen-to-body ratio.
  • the non-display area 100c is located between the hollow area 100a and the display area 100b.
  • FIG. 2 is a first cross-sectional view taken along the line A-A in the organic light emitting diode display device shown in FIG. 1.
  • the organic light emitting diode display device includes a substrate 10, a light emitting device layer 11, an isolation part, an encapsulation layer 13, a barrier wall 14, an anti-crack part 15 and a through hole 100d.
  • the substrate 10 has a hollow area 100a, a display area 100b located at the periphery of the hollow area 100a, and a non-display area 100c located between the hollow area 100a and the display area 100b.
  • the substrate 10 may be a glass substrate, a flexible substrate, and a flexible substrate.
  • the flexible substrate may be a polyimide substrate or a polyethylene terephthalate substrate.
  • the light emitting device layer 11 is used to generate visible light to display an image. Before forming the light-emitting device layer 11, an isolation portion is formed on the substrate 10, and the isolation portion divides the light-emitting device layer 11 into a first light-emitting device layer 111 and a second light-emitting device layer 112. The device layer 112 is formed by the same process and the same layer.
  • the first light emitting device layer 111 is formed on the substrate 10 on the side of the isolation portion close to the display area 100b
  • the second light emitting device layer 112 is formed on the substrate 10 on the side of the isolation portion close to the hollow area 100a.
  • the first light-emitting device layer 111 covers the substrate 10 of the display area 100b and partially covers the substrate 10 of the non-display area 100c
  • the second light-emitting device layer 112 covers the substrate 10 of the non-display area 100c and is formed on the barrier wall 14.
  • the light emitting device layer 11 further includes a third light emitting device layer 113a formed on the substrate 10 between the first isolation portion 121 and the second isolation portion 122, and a fourth light emitting device layer 113b formed on the isolation portion.
  • the light emitting device layer 11 is an organic light emitting diode layer.
  • the organic light emitting diode includes an anode, a cathode, and an organic light emitting layer between the anode and the cathode.
  • a hole transport layer and/or a hole injection layer can also be provided between the anode and the organic light emitting layer, and an electron transport layer and/or an electron injection layer can also be provided between the cathode and the organic light emitting layer.
  • the anode can be made of metal and/or indium tin oxide.
  • the cathode can be made of metal and/or indium tin oxide.
  • Metals include but are not limited to silver and magnesium.
  • the organic light emitting layer may include a red organic light emitting material, a green organic light emitting material, a blue organic light emitting material, and a white organic light emitting material. Since organic light-emitting materials and metals constituting the cathode or anode are sensitive to water vapor and oxygen, it is necessary to isolate the light-emitting device layer from water vapor and oxygen to increase the service life of the organic light-emitting diode display device.
  • FIG. 3 is a top view of the isolation portion in the organic light emitting diode display device shown in FIG. 2.
  • the isolation part is used to isolate the first light-emitting device layer 111 and the second light-emitting device layer 112 to prevent water vapor and oxygen from being transmitted through the second light-emitting device layer 112 in the non-display area 100c to the first light-emitting device in the display area 100b
  • the layer 111 affects the service life and display effect of the organic light emitting diode display device.
  • the number of the isolation parts may be multiple, the isolation parts are arranged around the hollow area 100a, the longitudinal section of the isolation parts is an inverted trapezoid, and the isolation parts may also be other structures with a wide vertical section and a narrow bottom.
  • the isolation portion is disposed on the substrate 10 in the non-display area 100c.
  • the isolation portion includes a first isolation portion 121 and a second isolation portion 122.
  • the first isolation portion 121 is located on a side close to the display area 100b, and the second isolation portion 122 is located close to One side of the through hole 100d.
  • the heights of the first isolation portion 121 and the second isolation portion 122 are the same.
  • the first isolation portion 121 and the second isolation portion 122 are both ring-shaped, the second isolation portion 122 is disposed around the hollow area 100 a, and the first isolation portion 121 is disposed around the second isolation portion 122.
  • the distance between the first isolation portion 121 and the second isolation portion 122 is greater than 100 micrometers to ensure an effective lateral encapsulation path of the encapsulation layer 13 encapsulating the light-emitting device layer 11.
  • the second isolation portion 122 also functions to block water vapor and oxygen.
  • the preparation material of the isolation part is an organic material, and the isolation part is made of a negative photoresist material through exposure and development, and its height is 0.5 micrometers to 10 micrometers.
  • the encapsulation layer 13 is used to encapsulate the light emitting device layer 11.
  • the encapsulation layer 13 covers the light emitting device layer 11, the isolation portion, and the substrate 10.
  • the encapsulation layer 13 includes a first inorganic insulating layer 131, a first organic insulating layer 132 and a second inorganic insulating layer 133.
  • the first inorganic insulating layer 131 is formed by a process with excellent step cover, so that the first inorganic insulating layer 131 can cover the light-emitting device layer 11 and at the same time cover the entire isolation portion, including the sides of the isolation portion.
  • the continuous first inorganic insulating layer 131 is formed, thereby improving the packaging reliability of the light emitting device layer 11.
  • the first inorganic insulating layer 131 is formed by a process with excellent step coverage such as atomic layer deposition or atomic implantation.
  • the first inorganic insulating layer 131 is at least one of a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and an aluminum oxide layer.
  • the first organic insulating layer 132 is formed on the surface of the first inorganic insulating layer 131.
  • the first organic insulating layer 132 is used to make the surface of the encapsulation layer 13 flatter.
  • the first organic insulating layer 132 can be formed by inkjet printing.
  • the second inorganic insulating layer 133 is formed on the surface of the first organic insulating layer 132.
  • the second inorganic insulating layer 133 may be at least one of a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and an aluminum oxide layer.
  • the inorganic insulating layer 133 may be formed by any one of chemical vapor deposition, atomic layer deposition, atomic layer implantation, sputtering deposition, pulsed laser deposition, and plasma enhanced vapor deposition.
  • the barrier wall 14 is used to block the organic insulating layer in the encapsulation layer 13 to avoid over flow of the organic insulating layer, such as the first organic insulating layer 132 in the encapsulation layer 13.
  • the barrier wall 14 is disposed on the substrate 10 of the non-display area 100c and is located on the side of the isolation portion close to the hollow area 100a.
  • the longitudinal section of the retaining wall 14 is trapezoidal, and the retaining wall 14 is ring-shaped, which is arranged around the hollow area 100a.
  • the preparation material of the retaining wall 14 can be an inorganic material or an organic material.
  • the anti-crack portion 15 is used to prevent the film layer on the substrate 10 from breaking, and is made of an inorganic material and formed by patterning the inorganic layer.
  • the anti-crack portion 15 is disposed on the substrate 10 of the non-display area 100c and is located on the side of the barrier wall 14 close to the hollow area 100a.
  • the through hole 100d is used to accommodate components such as a camera.
  • the shape of the through hole 100d may be a circle or other shapes.
  • the through hole 100 d is located in the hollow area 100 a and penetrates the substrate 10, the second light emitting device layer 112 and the packaging layer 13.
  • the through hole 100 d is formed by laser ablating the substrate of the hollow area 100 a, the second light emitting device layer 112 and the packaging layer 13.
  • the anti-crack portion 15 can prevent the crack extension in the inorganic layer in the encapsulation layer 13.
  • the organic light-emitting diode display device of the embodiment of the present application uses an isolation portion to isolate the first light-emitting device layer located on the side of the isolation portion near the display area and the second light-emitting device layer located on the side of the isolation portion near the through hole, and then uses an encapsulation layer Covering the light emitting device layer, the isolation part and the substrate so that the organic light emitting diode display device has a high screen-to-body ratio and good packaging reliability.
  • FIG. 4 is a second cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG.
  • the organic light emitting diode display device shown in FIG. 4 is basically similar to the organic light emitting diode display device shown in FIG. 2, except that the organic light emitting diode display device further includes a blocking portion 16 disposed on the substrate 10 in the non-display area 100c.
  • the blocking portion 16 is arranged in the same layer as the isolation portion and is located between the first isolation portion 121 and the second isolation portion 122.
  • the height of the blocking portion 16 is smaller than the height of the first isolation portion 121 and the second isolation portion 122.
  • the barrier 16 is used to increase the lateral diffusion path of water vapor and oxygen, and the lateral direction is parallel to the surface of the substrate 10 provided with the isolation portion, thereby improving the packaging reliability of the organic light emitting diode display device.
  • the blocking portion 16 is annular, and the blocking portion 16 is disposed around the second isolation portion 122.
  • the longitudinal cross-sectional shape of the blocking portion 16 may be at least one of a triangle, a semicircle, a trapezoid, a rectangle, or an irregular pattern. Specifically, the blocking portion is triangular.
  • FIG. 5 is a third cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG.
  • the organic light-emitting diode display device shown in FIG. 5 is basically similar to the organic light-emitting diode display device shown in FIG. 4, except that there are two blocking portions 16 and the longitudinal cross-sections of the two blocking portions 16 are both semicircular. The lateral diffusion path of water vapor and oxygen is increased, thereby further improving the packaging reliability of the organic light emitting diode display device.
  • Both blocking portions 16 are ring-shaped. It can be understood that there may also be multiple blocking portions 16, and the multiple blocking portions 16 are all ring-shaped, and the longitudinal cross-sectional shapes of the multiple blocking portions 16 may be the same or different.
  • FIG. 6 is a fourth cross-sectional view taken along the A-A tangent line of the organic light emitting diode display device shown in FIG.
  • the organic light-emitting diode display device shown in FIG. 6 is basically similar to the organic light-emitting diode display device shown in FIG. 4, except that there are a plurality of blocking portions 16 and the plurality of blocking portions 16 are alternately arranged in the first isolation portion 121 and Between the second isolation portions 122, the plurality of blocking portions 16 are ring-shaped.
  • the plurality of blocking portions 16 includes a first blocking portion 161, a second blocking portion 162, a third blocking portion 163, and a fourth blocking portion 164.
  • the first blocking portion 161 is disposed close to the first isolation portion 121, and the fourth blocking portion 164 is disposed close to the second isolation portion 122, the second blocking portion 162 and the third blocking portion 163 are located between the first blocking portion 161 and the fourth blocking portion 164, the second blocking portion 162 is disposed close to the first blocking portion 161, and the third blocking portion 162 is disposed close to the first blocking portion 161.
  • the blocking portion 163 is disposed close to the fourth blocking portion 164.
  • the height of the first blocking portion 161 is greater than the height of the third blocking portion 163, the height of the second blocking portion 162 is greater than the height of the first blocking portion 161, and the height of the fourth blocking portion 164 is greater than the height of the second blocking portion 162.
  • the longitudinal sections of the first blocking portion 161, the second blocking portion 162, the third blocking portion 163, and the fourth blocking portion 164 are all rectangular.
  • the multiple barriers 16 are arranged alternately in height to further increase the lateral diffusion paths of water vapor, oxygen, etc., thereby further improving packaging reliability.
  • FIG. 7 is a flowchart of a manufacturing method of an organic light emitting diode display device according to an embodiment of the application.
  • the manufacturing method includes the following steps:
  • a substrate is provided.
  • the substrate can be a glass substrate, a flexible substrate, and a flexible substrate.
  • the flexible substrate may be a polyimide substrate or a polyethylene terephthalate substrate.
  • the substrate has a hollow area, a display area located at the periphery of the hollow area, and a non-display area between the hollow area and the display area.
  • a negative photoresist on the entire surface is formed on the substrate, and the negative photoresist is exposed to light and developed to form an isolation portion.
  • the isolation part is ring-shaped, and the isolation part is arranged around the hollow area.
  • the longitudinal section of the partition is a shape with a wide top and a narrow bottom, such as an inverted trapezoid.
  • the isolation part is used to disconnect the subsequently formed light emitting device layer to prevent water vapor and oxygen from being transmitted to the light emitting device layer of the display area through the light emitting device layer close to the hollow area and affect the service life and display effect of the organic light emitting diode display device.
  • the isolation portion includes a first isolation portion and a second isolation portion, the first isolation portion is located on a side close to the display area, and the second isolation portion is located on a side close to the hollow area.
  • the height of the first isolation portion and the second isolation portion are the same.
  • the first isolation portion and the second isolation portion are both ring-shaped, the second isolation portion is arranged around the hollow area, and the first isolation portion is arranged around the second isolation portion.
  • the distance between the first isolation portion and the second isolation portion is greater than 100 micrometers to ensure an effective packaging path of the packaging layer encapsulating the light-emitting device layer in a lateral direction, which is parallel to the surface of the substrate provided with the isolation portion.
  • the second isolation part also functions to block water vapor and oxygen.
  • the anode is formed by sputtering deposition and yellowing process, and then the organic light-emitting layer is formed by vacuum evaporation or inkjet printing, and then the cathode is formed by sputtering deposition or vacuum evaporation.
  • the isolation portion is formed on the substrate, the light emitting device layer is divided into a first light emitting device layer and a second light emitting device layer.
  • the first light emitting device layer is formed on the substrate on the side of the isolation portion close to the display area, and the second light emitting device layer
  • the device layer is formed on the substrate on the side of the isolation portion close to the hollow area.
  • the present application can use the vapor deposition mask corresponding to the panel outline to complete the vapor deposition of the corresponding film layer, and the corresponding lining on the vapor deposition mask The position of the bottom hollow area does not need to be avoided.
  • the first inorganic insulating layer covering the light emitting device layer, the isolation portion, and the encapsulation layer of the substrate is formed by atomic layer deposition or atomic layer implantation. Due to the good step coverage of the atomic layer deposition and the atomic layer implantation, the first inorganic insulating layer is continuously formed on the light emitting device layer, the isolation portion and the substrate, which can play a good encapsulation effect.
  • inkjet printing is used to form a first organic insulating layer on the first inorganic insulating layer.
  • the second inorganic insulating layer covering the first organic insulating layer is formed by any one of chemical vapor deposition, atomic layer deposition, atomic layer injection, sputtering deposition, pulsed laser deposition, and plasma enhanced vapor deposition.
  • the substrate, the second light-emitting device layer, and the encapsulation layer in the hollow area are ablated by laser to form the through hole.
  • the shape of the through hole can be circular or other shapes.
  • the manufacturing method of the organic light emitting diode display device further includes forming a barrier on the substrate in the non-display area to resist the crack.
  • the retaining wall is ring-shaped, the longitudinal section of the retaining wall is trapezoidal, and the retaining wall is located on the side of the isolation part close to the hollow area.
  • the anti-crack part is ring-shaped, and the anti-crack part is located on the side of the retaining wall close to the hollow area.
  • the manufacturing method of the organic light emitting diode display device further includes forming a barrier portion between the first isolation portion and the second isolation portion, the barrier portion and the isolation portion are provided in the same layer and are located between the first isolation portion and the second isolation portion, and the barrier portion
  • the height of is smaller than the height of the first isolation portion and the second isolation portion.
  • the blocking part is ring-shaped, and the longitudinal section of the blocking part is at least one of a triangle, a semicircle, a trapezoid, a rectangle, or an irregular pattern. There are multiple blocking portions, and the multiple blocking portions are alternately arranged between the first isolation portion and the second isolation portion.
  • the manufacturing method of the organic light emitting diode display device of the present application uses an isolation portion to isolate the first light emitting device layer located on the side of the isolation portion near the display area and the second light emitting device layer located on the side of the isolation portion near the through hole, and then adopts packaging
  • the layer covers the light emitting device layer, the isolation part and the substrate so that the organic light emitting diode display device has a high screen-to-body ratio and good packaging reliability.
  • This application also provides an electronic device, which can be a mobile phone, a portable notebook or a monitoring device.
  • the electronic device includes the above-mentioned organic light emitting diode display device and a camera.
  • the camera is embedded in the through hole of the organic light emitting diode display device.
  • the organic light-emitting diode display device of the electronic device in the embodiment of the present application isolates the first light-emitting device layer located on the side of the isolation portion close to the display area from the second light-emitting device layer located on the side of the isolation portion close to the through hole by using the isolation portion.
  • the encapsulation layer is then used to cover the light-emitting device layer, the isolation part and the substrate so that the organic light-emitting diode display device has a high screen-to-body ratio and good packaging reliability, so that the electronic device has a high screen-to-body ratio and extends the usage time.

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Abstract

本申请公开一种有机发光二极管显示装置及其制造方法、电子设备，采用隔离部使位于隔离部靠近显示区一侧的第一发光器件层和位于隔离部靠近通孔一侧的第二发光器件层之间隔离，再采用封装层覆盖发光器件层、隔离部以及衬底以使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。

Description

有机发光二极管显示装置及其制造方法、电子设备 技术领域
本申请涉及显示技术领域，尤其涉及一种有机发光二极管显示装置及其制造方法、电子设备。
 背景技术
有机发光二极管(Oganic Light-Emitting Diode，OLED)由于具有自发光、高对比、广视角、低功耗以及可弯折等优点而受到了大众和研发者的喜爱。对于手机等显示装置，增加其屏占比以提高外观美观性已成为目前的设计主流。手机除了需要显示区以进行显示之外，还需要摄像头、听筒和话筒等部件以实现拍照以及语音通话等功能，摄像头、听筒以及话筒会使手机的屏占比降低。
目前，采用激光切割技术以实现屏下摄像头是增大屏占比的方法之一。然而，对于有机发光二极管显示装置，激光切割技术会导致其封装可靠性变差，从而影响有机发光二极管显示装置的显示效果。
因此，有必要提出一种技术方案使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。
 技术问题
本申请的目的在于提供一种有机发光二极管显示装置及其制造方法、电子设备，该有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。
 技术解决方案
一种有机发光二极管显示装置，所述有机发光二极管显示装置包括：
一衬底，所述衬底具有一镂空区、位于所述镂空区外围的显示区以及位于所述镂空区和所述显示区之间的非显示区；
至少一隔离部，所述隔离部设置于所述非显示区的所述衬底上，所述隔离部用于使第一发光器件层和第二发光器件层之间隔离；
一发光器件层，所述发光器件层包括所述第一发光器件层和所述第二发光器件层，所述第一发光器件层形成于所述隔离部靠近所述显示区一侧的所述衬底上，所述第二发光器件层形成于所述隔离部靠近所述镂空区一侧的所述衬底上；
一封装层，所述封装层覆盖所述发光器件层、所述隔离部以及所述衬底；
一通孔，所述通孔位于所述镂空区且贯穿所述衬底、所述第二发光器件层以及所述封装层。
在上述有机发光二极管显示装置中，所述隔离部包括第一隔离部和第二隔离部，所述第一隔离部位于靠近所述显示区的一侧，所述第二隔离部位于靠近所述通孔的一侧。
在上述有机发光二极管显示装置中，所述第一隔离部和所述第二隔离部之间的距离大于100微米。
在上述有机发光二极管显示装置中，所述有机发光二极管显示装置还包括设置于所述非显示区的所述衬底上的阻挡部，所述阻挡部与所述隔离部同层设置且位于所述第一隔离部和所述第二隔离部之间，所述阻挡部的高度小于所述第一隔离部和所述第二隔离部的高度。
在上述有机发光二极管显示装置中，所述阻挡部为多个，多个所述阻挡部高低交错地设置于所述第一隔离部和所述第二隔离部之间。
在上述有机发光二极管显示装置中，所述阻挡部的纵截面为三角形、半圆形、梯形、矩形或不规则图形中的至少一种。
在上述有机发光二极管显示装置中，所述封装层包括一无机层，所述无机层覆盖所述发光器件层、所述隔离部以及所述衬底。
在上述有机发光二极管显示装置中，所述无机层是通过原子层沉积或原子层注入形成。
在上述有机发光二极管显示装置中，所述隔离部的纵截面为倒梯形。
一种有机发光二极管显示装置的制造方法，所述制造方法包括如下步骤：
提供一衬底，所述衬底具有镂空区、位于所述镂空区外围的显示区以及位于所述镂空区和所述显示区之间的非显示区；
于所述非显示区的所述衬底上形成至少一隔离部，所述隔离部用于使第一发光器件层和第二发光器件层之间隔离；
于所述衬底上形成发光器件层，所述发光器件层包括所述第一发光器件层和所述第二发光器件层，所述第一发光器件层形成于所述隔离部靠近所述显示区一侧的所述衬底上，所述第二发光器件层形成于所述隔离部靠近所述镂空区一侧的所述衬底上；
形成覆盖所述发光器件层、所述隔离部以及所述衬底的封装层；
于所述镂空区形成贯穿所述衬底、所述第二发光器件层以及所述封装层的通孔。
在上述有机发光二极管显示装置的制造方法中，所述隔离部包括第一隔离部和第二隔离部，所述第一隔离部位于靠近所述显示区的一侧，所述第二隔离部位于靠近所述通孔的一侧。
在上述有机发光二极管显示装置的制造方法中，所述第一隔离部和所述第二隔离部之间的距离大于100微米。
在上述有机发光二极管显示装置的制造方法中，所述制造方法还包括：于所述第一隔离部和所述第二隔离部之间形成阻挡部，所述阻挡部与所述隔离部同层设置且位于所述第一隔离部和所述第二隔离部之间，所述阻挡部的高度小于所述第一隔离部和所述第二隔离部的高度。
在上述有机发光二极管显示装置的制造方法中，所述阻挡部为多个，多个所述阻挡部高低交错地设置于所述第一隔离部和所述第二隔离部之间。
在上述有机发光二极管显示装置的制造方法中，所述阻挡部的纵截面为三角形、半圆形、梯形、矩形或不规则图形中的至少一种。
在上述有机发光二极管显示装置的制造方法中，所述制造方法还包括：形成覆盖所述发光器件层、所述隔离部以及所述衬底的第一无机绝缘层。
在上述有机发光二极管显示装置的制造方法中，所述第一无机绝缘层是通过原子层沉积或原子层注入形成。
在上述有机发光二极管显示装置的制造方法中，所述隔离部的纵截面为倒梯形。
一种电子设备，所述电子设备包括上述有机发光二极管显示装置以及摄像头，所述摄像头嵌入所述有机发光二极管显示装置的所述通孔中。
 有益效果
本申请提供一种有机发光二极管显示装置及其制造方法、电子设备，采用隔离部使位于隔离部靠近显示区一侧的第一发光器件层和位于隔离部靠近通孔一侧的第二发光器件层之间隔离，再采用封装层覆盖发光器件层、隔离部以及衬底以使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。
 附图说明
图1为本申请实施例有机发光二极管显示装置的俯视图；
图2为沿图1所示有机发光二极管显示装置的A-A切线的第一种剖面图；
图3为图2所示有机发光二极管显示装置中的隔离部的俯视图；
图4为沿图1所示有机发光二极管显示装置的A-A切线的第二种剖面图；
图5为沿图1所示有机发光二极管显示装置的A-A切线的第三种剖面图；
图6为沿图1所示有机发光二极管显示装置的A-A切线的第四种剖面图;
图7为本申请实施例有机发光二极管显示装置的制造方法的流程图。
附图标注：
100a 镂空区；  100b显示区；100c 非显示区；100d通孔；121第一隔离部；122 第二隔离部； 10 衬底； 11发光器件层； 111 第一发光器件层； 112 第二发光器件层；113a 第三发光器件层； 113b第四发光器件层；13 封装层； 131 第一无机绝缘层； 132 第一有机绝缘层； 133 第二无机绝缘层；14 挡墙；15 抗裂纹部；16 阻挡部；161第一阻挡部； 162 第二阻挡部； 163 第三阻挡部； 164 第四阻挡部。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1，其为本申请实施例有机发光二极管显示装置的的俯视图。有机发光二极管显示装置具有镂空区100a、显示区100b以及非显示区100c。显示区100b用于显示图像，显示区100b位于镂空区100a的外围。镂空区100a可以位于显示区100b的中间，也可以位于显示区100b的转角处，镂空区100a具有贯穿有机发光二极管显示装置厚度方向的通孔100d，通孔100d中用于设置摄像头等光学器件以使有机发光二极管显示装置实现高屏占比。非显示区100c位于镂空区100a和显示区100b之间。
请参阅图2，其为沿图1所示有机发光二极管显示装置中的A-A切线的第一种剖面图。有机发光二极管显示装置包括衬底10、发光器件层11、隔离部、封装层13、挡墙14、抗裂纹部15以及通孔100d。
衬底10具有镂空区100a、位于镂空区100a外围的显示区100b以及位于镂空区100a和显示区100b之间的非显示区100c。衬底10可以为玻璃基板、柔性基板以及可挠性基板。柔性基板可以为聚酰亚胺基板或聚对苯二甲酸乙二醇酯基板。
发光器件层11用于产生可见光以显示图像。由于形成发光器件层11之前，衬底10上形成有隔离部，隔离部使发光器件层11分割为第一发光器件层111和第二发光器件层112，第一发光器件层111和第二发光器件层112是通过同一制程且同层形成。第一发光器件层111形成于隔离部靠近显示区100b一侧的衬底10上，第二发光器件层112形成于隔离部靠近镂空区100a一侧的衬底10上。具体地，第一发光器件层111覆盖显示区100b的衬底10且部分覆盖非显示区100c的衬底10，第二发光器件层112覆盖非显示区100c的衬底10并形成于挡墙14以及抗裂纹部15上。发光器件层11还包括形成于第一隔离部121和第二隔离部122之间的衬底10上的第三发光器件层113a以及形成于隔离部上的第四发光器件层113b。发光器件层11为有机发光二极管层。有机发光二极管包括阳极、阴极以及位于阳极和阴极之间的有机发光层。阳极和有机发光层之间还可以设置空穴传输层和/或空穴注入层，阴极和有机发光层之间还可以设置电子传输层和/或电子注入层。阳极的制备材料可以为金属和/或氧化铟锡。阴极的制备材料可以为金属和/或氧化铟锡。金属包括但不限于银以及镁。有机发光层可以包括红色有机发光材料、绿色有机发光材料、蓝色有机发光材料以及白色有机发光材料。由于有机发光材料以及组成阴极或阳极的金属对水蒸气以及氧气敏感，故需要使发光器件层与水蒸气以及氧气隔离以增加有机发光二极管显示装置的使用寿命。
请参阅图2和图3，图3为图2所示有机发光二极管显示装置中的隔离部的俯视图。隔离部用于使第一发光器件层111和第二发光器件层112之间隔离，避免水蒸气以及氧气等通过非显示区100c的第二发光器件层112传输至显示区100b的第一发光器件层111而影响有机发光二极管显示装置的使用寿命以及显示效果。隔离部的数目可以为多个，隔离部环绕镂空区100a设置，隔离部的纵截面为倒梯形，隔离部也可以为其他纵截面形状为上宽下窄的结构。隔离部设置于非显示区100c的衬底10上，隔离部包括第一隔离部121和第二隔离部122，第一隔离部121位于靠近显示区100b的一侧，第二隔离部122位于靠近通孔100d的一侧。第一隔离部121和第二隔离部122的高度相同。第一隔离部121和第二隔离部122均为环状，第二隔离部122环绕镂空区100a设置，第一隔离部121环绕第二隔离部122设置。第一隔离部121和第二隔离部122之间的距离大于100微米以保证封装发光器件层11的封装层13在侧向的有效封装路径。第二隔离部122还起到阻挡水蒸气以及氧气的作用。隔离部的制备材料为有机材料，隔离部是由负性光阻材料经过曝光并显影制得，其高度为0.5微米-10微米。
封装层13用于封装发光器件层11。封装层13覆盖发光器件层11、隔离部以及衬底10。封装层13包括第一无机绝缘层131、第一有机绝缘层132以及第二无机绝缘层133。第一无机绝缘层131是通过台阶覆盖性（step cover）优良的工艺形成，以使第一无机绝缘层131能覆盖发光器件层11的同时，能覆盖整个隔离部，包括隔离部的侧边以形成连续的第一无机绝缘层131，从而提高发光器件层11的封装可靠性。第一无机绝缘层131通过原子层沉积或原子注入等台阶覆盖性优良的工艺形成。第一无机绝缘层131为氮化硅层、氧化硅层、氮氧化硅层以及三氧化二铝层中的至少一种。第一有机绝缘层132形成于第一无机绝缘层131的表面，第一有机绝缘层132用于使封装层13的表面更平坦，第一有机绝缘层132可以通过喷墨打印形成。第二无机绝缘层133形成于第一有机绝缘层132的表面，第二无机绝缘层133可以为氮化硅层、氧化硅层、氮氧化硅层以及氧化铝层中的至少一种，第二无机绝缘层133可以通过化学气相沉积、原子层沉积、原子层注入、溅射沉积、脉冲激光沉积以及等离子增强气相沉积中的任意一种形成。
挡墙14用于阻挡封装层13中的有机绝缘层，避免有机绝缘层溢出（over flow），例如封装层13中的第一有机绝缘层132。挡墙14设置于非显示区100c的衬底10上且位于隔离部靠近镂空区100a的一侧。挡墙14的纵截面为梯形，挡墙14为环状，其环绕镂空区100a设置。挡墙14的制备材料可以无机材料，也可以为有机材料。
抗裂纹部15用于防止衬底10上的膜层断裂，其为无机材料制成，通过对无机层图案化而形成。抗裂纹部15设置于非显示区100c的衬底10上且位于挡墙14靠近镂空区100a的一侧。
通孔100d用于容纳摄像头等部件。通孔100d的形状可以为圆形或其他形状。通孔100d位于镂空区100a且贯穿衬底10、第二发光器件层112以及封装层13。通孔100d通过激光烧蚀镂空区100a的衬底、第二发光器件层112以及封装层13形成。激光烧蚀以形成通孔100d时，抗裂纹部15可以防止封装层13中的无机层中的裂纹延伸。
本申请实施例有机发光二极管显示装置采用隔离部使位于隔离部靠近显示区一侧的第一发光器件层和位于隔离部靠近通孔一侧的第二发光器件层之间隔离，再采用封装层覆盖发光器件层、隔离部以及衬底以使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。
请参阅图4，其为沿图1所示有机发光二极管显示装置的A-A切线的第二种剖面图。图4所示有机发光二极管显示装置与图2所示有机发光二极管显示装置基本相似，不同之处在于，有机发光二极管显示装置还包括设置于非显示区100c的衬底10上的阻挡部16，阻挡部16与隔离部同层设置且位于第一隔离部121和第二隔离部122之间，阻挡部16的高度小于第一隔离部121和第二隔离部122的高度。阻挡部16用于增加水蒸气以及氧气的侧向扩散路径，侧向与衬底10设置有隔离部的表面平行，从而提高有机发光二极管显示装置的封装可靠性。阻挡部16为环状，阻挡部16环绕第二隔离部122设置。阻挡部16的纵截面形状可以三角形、半圆形、梯形、矩形或不规则图形中的至少一种。具体地，阻挡部为三角形。
请参阅图5，其为沿图1所示有机发光二极管显示装置的A-A切线的第三种剖面图。图5所示有机发光二极管显示装置与图4所示有机发光二极管显示装置基本相似，不同之处在于，阻挡部16为两个，两个阻挡部16的纵截面均为半圆形，以进一步地增加水蒸气以及氧气的侧向扩散路径，从而进一步地提高有机发光二极管显示装置的封装可靠性。两个阻挡部16均为环状。可以理解的是，阻挡部16也可以为多个，多个阻挡部16均为环状，多个阻挡部16的纵截面的形状可以相同，也可以不同。
请参阅图6，其为沿图1所示有机发光二极管显示装置的A-A切线的第四种剖面图。图6所示有机发光二极管显示装置与图4所示有机发光二极管显示装置基本相似，不同之处在于，阻挡部16为多个，多个阻挡部16高低交错地设置于第一隔离部121和第二隔离部122之间，多个阻挡部16为环状。具体地，多个阻挡部16包括第一阻挡部161、第二阻挡部162、第三阻挡部163以及第四阻挡部164，第一阻挡部161靠近第一隔离部121设置，第四阻挡部164靠近第二隔离部122设置，第二阻挡部162和第三阻挡部163位于第一阻挡部161和第四阻挡部164之间，第二阻挡部162靠近第一阻挡部161设置，第三阻挡部163靠近第四阻挡部164设置。第一阻挡部161的高度大于第三阻挡部163的高度，第二阻挡部162的高度大于第一阻挡部161的高度，第四阻挡部164的高度大于第二阻挡部162的高度。第一阻挡部161、第二阻挡部162、第三阻挡阻163以及第四阻挡部164的纵截面均为矩形。多个阻挡部16高低交错的设置以进一步地增加水蒸气以及氧气等的侧向扩散路径，从而进一步地提高封装可靠性。
请参阅图7，其为本申请实施例有机发光二极管显示装置的制造方法的流程图。该制造方法包括如下步骤：
S10:提供一衬底。
具体地，提供一衬底。衬底可以为玻璃基板、柔性基板以及可挠性基板。柔性基板可以为聚酰亚胺基板或聚对苯二甲酸乙二醇酯基板。衬底具有镂空区、位于镂空区外围的显示区以及位于镂空区和显示区之间的非显示区。
S11:于非显示区的衬底上形成至少一隔离部。
具体地，于衬底上形成整面的负性光阻，对负性光阻曝光并显影以形成隔离部。隔离部为环状，隔离部环绕镂空区设置。隔离部的纵截面为上宽下窄的形状，例如倒梯形。隔离部用于使后续形成发光器件层断开，避免水蒸气以及氧气等通过靠近镂空区的发光器件层传输至显示区的发光器件层而影响有机发光二极管显示装置的使用寿命以及显示效果。
具体地，隔离部包括第一隔离部和第二隔离部，第一隔离部位于靠近显示区的一侧，第二隔离部位于靠近镂空区的一侧。第一隔离部和第二隔离部的高度相同。第一隔离部和第二隔离部均为环状，第二隔离部环绕镂空区设置，第一隔离部环绕第二隔离部设置。第一隔离部和第二隔离部之间的距离大于100微米以保证封装发光器件层的封装层在侧向的有效封装路径，该侧向与衬底设置有隔离部的表面平行。第二隔离部还起到阻挡水蒸气以及氧气的作用。
S12：于衬底上形成发光器件层。
具体地，通过溅射沉积以及黄光制程以形成阳极，再通过真空蒸镀或喷墨打印以形成有机发光层，再通过溅射沉积或真空蒸镀以形成阴极。由于隔离部形成于衬底上，发光器件层被分割为第一发光器件层和第二发光器件层，第一发光器件层形成于隔离部靠近显示区的一侧的衬底上，第二发光器件层形成于隔离部靠近镂空区一侧的衬底上。
需要说明的是，采用蒸镀工艺以形成发光器件层中的膜层时，本申请可以采用与面板轮廓（Panel outline）对应的蒸镀罩完成对应膜层的蒸镀，蒸镀罩上对应衬底镂空区的位置不需要进行避让。
S13:形成覆盖发光器件层、隔离部以及衬底的封装层。
具体地，通过原子层沉积或原子层注入形成覆盖发光器件层、隔离部以及衬底的封装层的第一无机绝缘层。由于原子层沉积以及原子层注入具有良好的台阶覆盖性，使得第一无机绝缘层连续地形成于发光器件层、隔离部以及衬底上，能起到良好的封装作用。
接着，采用喷墨打印以于第一无机绝缘层上形成第一有机绝缘层。
最后，通过化学气相沉积、原子层沉积、原子层注入、溅射沉积、脉冲激光沉积以及等离子增强气相沉积中的任意一种形成覆盖第一有机绝缘层的第二无机绝缘层。
S14:于镂空区形成贯穿衬底、第二发光器件层以及封装层的通孔。
具体地，通过激光烧蚀镂空区的衬底、第二发光器件层以及封装层以形成通孔。通孔的形状可以为圆形或者其他形状。
有机发光二极管显示装置的制造方法还包括于非显示区的衬底上形成挡墙以抗裂纹部。挡墙为环状，挡墙的纵截面为梯形，挡墙位于隔离部靠近镂空区的一侧。抗裂纹部为环状，抗裂纹部位于挡墙靠近镂空区的一侧。
有机发光二极管显示装置的制造方法还包括于第一隔离部和第二隔离部之间形成阻挡部，阻挡部与隔离部同层设置且位于第一隔离部和第二隔离部之间，阻挡部的高度小于第一隔离部和第二隔离部的高度。阻挡部为环状，阻挡部的纵截面为三角形、半圆形、梯形、矩形或不规则图形中的至少一种。阻挡部为多个，多个阻挡部高低交错地设置于第一隔离部和第二隔离部之间。
本申请有机发光二极管显示装置的制造方法采用隔离部使位于隔离部靠近显示区一侧的第一发光器件层和位于隔离部靠近通孔一侧的第二发光器件层之间隔离，再采用封装层覆盖发光器件层、隔离部以及衬底以使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性。
本申请还提供一种电子设备，该电子设备可以为手机、便携式笔记本或监控设备。电子设置包括上述有机发光二极管显示装置以及摄像头。摄像头嵌入有机发光二极管显示装置的通孔中。
本申请实施例电子设备的有机发光二极管显示装置通过采用隔离部使位于隔离部靠近显示区一侧的第一发光器件层和位于隔离部靠近通孔一侧的第二发光器件层之间隔离，再采用封装层覆盖发光器件层、隔离部以及衬底以使有机发光二极管显示装置具有高屏占比的同时具有良好的封装可靠性，从而使电子设备具有高屏占比，并延长电子设备的使用时间。
以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (19)

  1. 一种有机发光二极管显示装置，其中，所述有机发光二极管显示装置包括：
    一衬底，所述衬底具有一镂空区、位于所述镂空区外围的显示区以及位于所述镂空区和所述显示区之间的非显示区；
    至少一隔离部，所述隔离部设置于所述非显示区的所述衬底上，所述隔离部用于使第一发光器件层和第二发光器件层之间隔离；
    一发光器件层，所述发光器件层包括所述第一发光器件层和所述第二发光器件层，所述第一发光器件层形成于所述隔离部靠近所述显示区一侧的所述衬底上，所述第二发光器件层形成于所述隔离部靠近所述镂空区一侧的所述衬底上；
    一封装层，所述封装层覆盖所述发光器件层、所述隔离部以及所述衬底；
    一通孔，所述通孔位于所述镂空区且贯穿所述衬底、所述第二发光器件层以及所述封装层。
  2. 根据权利要求1所述的有机发光二极管显示装置，其中，所述隔离部包括第一隔离部和第二隔离部，所述第一隔离部位于靠近所述显示区的一侧，所述第二隔离部位于靠近所述通孔的一侧。
  3. 根据权利要求2所述的有机发光二极管显示装置，其中，所述第一隔离部和所述第二隔离部之间的距离大于100微米。
  4. 根据权利要求2所述的有机发光二极管显示装置，其中，所述有机发光二极管显示装置还包括设置于所述非显示区的所述衬底上的阻挡部，所述阻挡部与所述隔离部同层设置且位于所述第一隔离部和所述第二隔离部之间，所述阻挡部的高度小于所述第一隔离部和所述第二隔离部的高度。
  5. 根据权利要求4所述的有机发光二极管显示装置，其中，所述阻挡部为多个，多个所述阻挡部高低交错地设置于所述第一隔离部和所述第二隔离部之间。
  6. 根据权利要求4所述的有机发光二极管显示装置，其中，所述阻挡部的纵截面为三角形、半圆形、梯形、矩形或不规则图形中的至少一种。
  7. 根据权利要求1所述的有机发光二极管显示装置，其中，所述封装层包括一无机层，所述无机层覆盖所述发光器件层、所述隔离部以及所述衬底。
  8. 根据权利要求7所述的有机发光二极管显示装置，其中，所述无机层是通过原子层沉积或原子层注入形成。
  9. 根据权利要求1所述的有机发光二极管显示装置，其中，所述隔离部的纵截面为倒梯形。
  10. 一种有机发光二极管显示装置的制造方法，其中，所述制造方法包括如下步骤：
    提供一衬底，所述衬底具有镂空区、位于所述镂空区外围的显示区以及位于所述镂空区和所述显示区之间的非显示区；
    于所述非显示区的所述衬底上形成至少一隔离部，所述隔离部用于使第一发光器件层和第二发光器件层之间隔离；
    于所述衬底上形成发光器件层，所述发光器件层包括所述第一发光器件层和所述第二发光器件层，所述第一发光器件层形成于所述隔离部靠近所述显示区一侧的所述衬底上，所述第二发光器件层形成于所述隔离部靠近所述镂空区一侧的所述衬底上；
    形成覆盖所述发光器件层、所述隔离部以及所述衬底的封装层；
    于所述镂空区形成贯穿所述衬底、所述第二发光器件层以及所述封装层的通孔。
  11. 根据权利要求10所述的有机发光二极管显示装置的制造方法，其中，所述隔离部包括第一隔离部和第二隔离部，所述第一隔离部位于靠近所述显示区的一侧，所述第二隔离部位于靠近所述通孔的一侧。
  12. 根据权利要求11所述的有机发光二极管显示装置的制造方法，其中，所述第一隔离部和所述第二隔离部之间的距离大于100微米。
  13. 根据权利要求11所述的有机发光二极管显示装置的制造方法，其中，所述制造方法还包括：于所述第一隔离部和所述第二隔离部之间形成阻挡部，所述阻挡部与所述隔离部同层设置且位于所述第一隔离部和所述第二隔离部之间，所述阻挡部的高度小于所述第一隔离部和所述第二隔离部的高度。
  14. 根据权利要求13所述的有机发光二极管显示装置的制造方法，其中，所述阻挡部为多个，多个所述阻挡部高低交错地设置于所述第一隔离部和所述第二隔离部之间。
  15. 根据权利要求13所述的有机发光二极管显示装置的制造方法，其中，所述阻挡部的纵截面为三角形、半圆形、梯形、矩形或不规则图形中的至少一种。
  16. 根据权利要求10所述的有机发光二极管显示装置的制造方法，其中，所述制造方法还包括：形成覆盖所述发光器件层、所述隔离部以及所述衬底的第一无机绝缘层。
  17. 根据权利要求16所述的有机发光二极管显示装置的制造方法，其中，所述第一无机绝缘层是通过原子层沉积或原子层注入形成。
  18. 根据权利要求10所述的有机发光二极管显示装置的制造方法，其中，所述隔离部的纵截面为倒梯形。
  19. 一种电子设备，其中，所述电子设备包括权利要求1所述的有机发光二极管显示装置以及摄像头，所述摄像头嵌入所述有机发光二极管显示装置的所述通孔中。
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