WO2021023189A1 - 显示基板及其制备方法、显示装置 - Google Patents
显示基板及其制备方法、显示装置 Download PDFInfo
- Publication number
- WO2021023189A1 WO2021023189A1 PCT/CN2020/106870 CN2020106870W WO2021023189A1 WO 2021023189 A1 WO2021023189 A1 WO 2021023189A1 CN 2020106870 W CN2020106870 W CN 2020106870W WO 2021023189 A1 WO2021023189 A1 WO 2021023189A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- display
- pattern layer
- dam
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 296
- 238000000034 method Methods 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 157
- 238000005538 encapsulation Methods 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims description 148
- 230000000903 blocking effect Effects 0.000 claims description 112
- 238000004806 packaging method and process Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 37
- 239000007788 liquid Substances 0.000 claims description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 32
- 238000000059 patterning Methods 0.000 claims description 21
- 239000011810 insulating material Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 15
- 239000011368 organic material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 499
- 239000002585 base Substances 0.000 description 38
- 238000013461 design Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000004020 conductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000012858 packaging process Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- -1 polymer resin Etc. Chemical compound 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical class NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- NNNSKJSUQWKSAM-UHFFFAOYSA-L magnesium;dichlorate Chemical compound [Mg+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O NNNSKJSUQWKSAM-UHFFFAOYSA-L 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
Description
Claims (20)
- 一种显示基板,具有显示区和位于所述显示区周围的边框区,所述显示基板包括:基底;像素单元,设置于所述基底上且位于所述显示区;至少一个阻挡坝,设置于所述基底上且位于所述边框区,所述至少一个阻挡坝在背离所述基底的一侧的表面设置有至少一个凹槽;所述至少一个凹槽的深度方向垂直于所述基底,所述至少一个凹槽的延伸方向与设置有所述至少一个凹糟的阻挡坝的延伸方向大致相同;以及第一封装层,覆盖所述至少一个阻挡坝。
- 根据权利要求1所述的显示基板,其中,所述第一封装层中的覆盖所述至少一个凹槽的部分与所述至少一个凹槽共形。
- 根据权利要求1或2所述的显示基板,其中,设置有凹槽的阻挡坝中的至少一个包括:在所述基底上依次叠置的第二图案层和第一图案层,所述凹槽位于所述第一图案层中。
- 根据权利要求3所述的显示基板,还包括:位于所述显示区的隔离柱;所述隔离柱与所述第一图案层由同一膜层构图形成。
- 根据权利要求3或4所述的显示基板,还包括:位于所述显示区的像素界定层;所述像素界定层与所述第二图案层由同一膜层构图形成。
- 根据权利要求3~5中任一项所述的显示基板,还包括:至少覆盖所述显示区的平坦层;所述阻挡坝还包括位于所述第二图案层和所述基底之间的第三图案层,所述平坦层与所述第三图案层由同一膜层构图形成。
- 根据权利要求6所述的显示基板,其中,所述至少一个阻挡坝设置为至少两个,至少两个阻挡坝包括第一阻挡坝和第二阻挡坝;所述第一阻挡坝位于所述显示区和所述第二阻挡坝之间;所述第一阻挡坝包括所述第一图案层和所述第二图案层,所述第二阻挡坝包括所述第一图案层、所述第二图案层和所述第三图案层。
- 根据权利要求1~7中任一项所述的显示基板,其中,所述至少一个阻挡坝设置为至少两个,至少两个阻挡坝环绕所述显示区且由内向外依次排布;所述凹槽设置为环绕所述显示区,且所述凹槽在所述基底上的正投影为闭合形状。
- 根据权利要求8所述的显示基板,其中,沿从所述显示基板的中心至边沿的方向,所述至少两个阻挡坝的高度逐渐增加。
- 根据权利要求1~9中任一项所述的显示基板,其中,在至少一个设置有凹槽的阻挡坝中,设置有至少两个环绕所述显示区的凹槽,且至少两个凹槽由内向外依次排布。
- 根据权利要求1~10中任一项所述的显示基板,其中,所述凹槽中设置有多个突出部;沿所述凹槽的延伸方向,所述多个突出部依次间隔排布。
- 根据权利要求11所述的显示基板,其中,所述多个突出部与所述阻挡坝中的背离所述基底的部分由同一膜层构图形成。
- 根据权利要求11或12所述的显示基板,其中,所述多个突出部在所述基底上的正投影的形状为三角形、矩形、多边形和圆形中的至少一者。
- 根据权利要求1~13中任一项所述的显示基板,还包括:第二封装层,位于所述第一封装层背离所述基底的一侧;所述第二封装层覆盖所述显示区和所述阻挡坝;第三封装层,位于所述第一封装层和所述第二封装层之间;所述第三封装层至少覆盖所述显示区;所述阻挡坝在所述基底上的正投影的背离所述显示区的边缘,位于所述第三封装层在所述基底上的正投影之外。
- 一种显示装置,包括如权利要求1~14中任一项所述的显示基板。
- 一种显示基板的制备方法,包括提供基底,所述基底具有显示区以及位于所述显示区周围的边框区;在所述基底上且在所述边框区形成至少一个阻挡坝,在所述至少一个阻挡坝的背离所述基底的一侧形成有至少一个凹槽;所述至少一个凹槽的深度方向垂直于所述基底,所述至少一个凹槽的延伸方向与设置有所述至少一个凹糟的阻挡坝的延伸方向大致相同;以及在所述基底上形成第一封装层,以覆盖所述显示区和所述至少一个阻挡坝。
- 根据权利要求16所述的制备方法,其中,所述至少一个阻挡坝包括依次叠置在所述基底上的第二图案层和第一图案层,所述凹槽形成在所述第一图案层中,所述形成至少一个阻挡坝,包括:在所述基底上形成第一材料层;提供半色调掩模板构图所述第一材料层,包括:在所述第一材料层的背离所述基底的一侧涂覆光刻胶;采用半色调掩模板曝光所述光刻胶,显影所述光刻胶,形成光刻胶全部去除区、光刻胶半保留区以及光刻胶全部保留区;蚀刻所述第一材料层,去除所述第一材料层中位于所述光刻全部去除区的部分;采用灰化工艺,去除所述光刻胶中位于所述光刻胶半保留区的部分;蚀刻所述第一材料层中位于所述光刻胶半保留区的部分,形成第一图案层和隔离柱;剥离剩余的光刻胶;其中,在所述显示区,所述第一材料层中的背离所述基底的部分形成为隔离柱,所述第一材料层中的面向所述基底的部分形成为像素界定层,以及在所述边框区,所述第一材料层中的背离所述基底的部分形成为所述第一图案层,所述第一材料层中的靠近所述基底的部分形成为所述第二图案层。
- 根据权利要求16所述的制备方法,其中,所述至少一个阻挡坝包括依次叠置在所述基底上的第二图案层和第一图案层,所述凹槽形成在所述第一图案层中,所述形成至少一个阻挡坝,包括:在所述基底上依次沉积得到第二材料层和第一材料层以形成叠层;以及提供半色调掩模板同时构图所述第一材料层和所述第二材料层;其中,所述第一材料层中的位于所述显示区的部分形成为所述隔离柱,所述第一材料层中的位于所述边框区的部分形成为所述第一图案层,所述第二材料层中的位于所述显示区的部分形成为所述像素界定层,所述第二材料层中的位于所述边框区的部分形成为所述第二图案层。
- 根据权利要求17或18所述的制备方法,其中,所述至少一个阻挡坝还包括位于所述第二图案层和所述基底之间的第三图案层,所述形成至少一个阻挡坝,包括:在所述基底上沉积得到绝缘材料薄膜,以平坦化所述基底的表面;对所述绝缘材料薄膜进行构图,所述绝缘材料薄膜中的位于所述显示区的部分形成为平坦层,所述绝缘材料薄膜中的位于所述显示区外的部分形成 为所述第三图案层。
- 根据权利要求17或18所述的制备方法,还包括:形成所述第一封装层之后,在所述至少一个阻挡坝的面向所述显示区的区域涂覆包括有机材料的液体;以及对所述液体进行干燥固化以形成第三封装层。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/420,104 US20220085330A1 (en) | 2019-08-06 | 2020-08-04 | Display substrate and manufacturing method therefor, and display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910722165.2 | 2019-08-06 | ||
CN201910722165.2A CN110416434B (zh) | 2019-08-06 | 2019-08-06 | 显示基板及其制备方法、显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021023189A1 true WO2021023189A1 (zh) | 2021-02-11 |
Family
ID=68366178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/106870 WO2021023189A1 (zh) | 2019-08-06 | 2020-08-04 | 显示基板及其制备方法、显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220085330A1 (zh) |
CN (1) | CN110416434B (zh) |
WO (1) | WO2021023189A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113410418A (zh) * | 2021-06-16 | 2021-09-17 | 京东方科技集团股份有限公司 | 封装方法、显示面板及显示装置 |
CN113611729A (zh) * | 2021-08-05 | 2021-11-05 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN114430014A (zh) * | 2022-01-28 | 2022-05-03 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110416434B (zh) * | 2019-08-06 | 2022-01-28 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
CN113287198B (zh) * | 2019-12-20 | 2023-04-18 | 京东方科技集团股份有限公司 | 显示面板及其制作方法和对位方法 |
CN111312779B (zh) * | 2020-02-27 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | 一种用于优化喷墨打印封装制程的结构及方法、显示屏 |
CN111495703B (zh) * | 2020-04-29 | 2021-05-04 | 京东方科技集团股份有限公司 | 显示面板的检测方法和检测装置 |
CN112002828B (zh) * | 2020-09-04 | 2023-11-07 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
CN112331707A (zh) * | 2020-10-29 | 2021-02-05 | 合肥维信诺科技有限公司 | 显示面板及其制备方法 |
CN112820841B (zh) * | 2021-01-18 | 2022-06-21 | 合肥维信诺科技有限公司 | 显示基板及显示基板制备方法 |
KR20220106261A (ko) * | 2021-01-21 | 2022-07-29 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN115380386A (zh) * | 2021-03-19 | 2022-11-22 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
CN113097262A (zh) * | 2021-03-25 | 2021-07-09 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
CN113314683B (zh) * | 2021-05-27 | 2023-08-08 | 京东方科技集团股份有限公司 | 挡墙结构、显示面板及显示装置 |
CN116548094A (zh) * | 2021-11-29 | 2023-08-04 | 京东方科技集团股份有限公司 | 显示基板 |
CN114420869B (zh) * | 2022-01-17 | 2024-03-12 | 京东方科技集团股份有限公司 | 一种显示基板及显示装置 |
CN114582938A (zh) * | 2022-02-18 | 2022-06-03 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板及oled显示面板的制备方法 |
CN114583080A (zh) * | 2022-02-24 | 2022-06-03 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示面板及其制备方法 |
CN117581653A (zh) * | 2022-05-26 | 2024-02-20 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN117501834A (zh) * | 2022-05-31 | 2024-02-02 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN115224223A (zh) * | 2022-08-02 | 2022-10-21 | 维信诺科技股份有限公司 | 显示面板、显示装置及显示面板的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601781A (zh) * | 2017-01-25 | 2017-04-26 | 上海天马微电子有限公司 | 有机发光显示面板和显示装置 |
CN106711171A (zh) * | 2015-11-17 | 2017-05-24 | 三星显示有限公司 | 显示装置和制造显示装置的方法 |
CN109301084A (zh) * | 2018-09-28 | 2019-02-01 | 京东方科技集团股份有限公司 | 封装结构、电子装置及封装方法 |
KR20190030951A (ko) * | 2017-09-15 | 2019-03-25 | 엘지디스플레이 주식회사 | 표시 장치 |
CN110416434A (zh) * | 2019-08-06 | 2019-11-05 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559772B2 (en) * | 2017-03-31 | 2020-02-11 | Sharp Kabushiki Kaisha | Display device and production method thereof |
KR102456123B1 (ko) * | 2017-12-04 | 2022-10-17 | 엘지디스플레이 주식회사 | 표시장치 |
KR102431808B1 (ko) * | 2017-12-11 | 2022-08-10 | 엘지디스플레이 주식회사 | 터치 스크린 일체형 표시장치 |
KR102489225B1 (ko) * | 2017-12-13 | 2023-01-17 | 엘지디스플레이 주식회사 | 표시장치와 그의 제조방법 |
KR102457583B1 (ko) * | 2017-12-21 | 2022-10-24 | 삼성디스플레이 주식회사 | 표시 장치 및 그것의 제조 방법 |
CN109256481B (zh) * | 2018-08-30 | 2020-09-11 | 云谷(固安)科技有限公司 | 显示面板和显示装置 |
CN109273510B (zh) * | 2018-10-17 | 2020-04-28 | 武汉华星光电半导体显示技术有限公司 | 有机自发光二极管显示面板及其制作方法 |
CN109585676B (zh) * | 2018-11-28 | 2020-10-27 | 云谷(固安)科技有限公司 | 显示面板 |
CN109585690B (zh) * | 2018-12-29 | 2021-03-16 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
CN109786578A (zh) * | 2019-01-30 | 2019-05-21 | 京东方科技集团股份有限公司 | Oled基板及oled显示装置 |
CN109888126B (zh) * | 2019-02-28 | 2021-06-08 | 云谷(固安)科技有限公司 | 显示面板及其制备方法和具有其的显示装置 |
-
2019
- 2019-08-06 CN CN201910722165.2A patent/CN110416434B/zh active Active
-
2020
- 2020-08-04 US US17/420,104 patent/US20220085330A1/en active Pending
- 2020-08-04 WO PCT/CN2020/106870 patent/WO2021023189A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711171A (zh) * | 2015-11-17 | 2017-05-24 | 三星显示有限公司 | 显示装置和制造显示装置的方法 |
CN106601781A (zh) * | 2017-01-25 | 2017-04-26 | 上海天马微电子有限公司 | 有机发光显示面板和显示装置 |
KR20190030951A (ko) * | 2017-09-15 | 2019-03-25 | 엘지디스플레이 주식회사 | 표시 장치 |
CN109301084A (zh) * | 2018-09-28 | 2019-02-01 | 京东方科技集团股份有限公司 | 封装结构、电子装置及封装方法 |
CN110416434A (zh) * | 2019-08-06 | 2019-11-05 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113410418A (zh) * | 2021-06-16 | 2021-09-17 | 京东方科技集团股份有限公司 | 封装方法、显示面板及显示装置 |
CN113410418B (zh) * | 2021-06-16 | 2024-02-20 | 京东方科技集团股份有限公司 | 封装方法、显示面板及显示装置 |
CN113611729A (zh) * | 2021-08-05 | 2021-11-05 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN114430014A (zh) * | 2022-01-28 | 2022-05-03 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110416434A (zh) | 2019-11-05 |
CN110416434B (zh) | 2022-01-28 |
US20220085330A1 (en) | 2022-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2021023189A1 (zh) | 显示基板及其制备方法、显示装置 | |
US11289678B2 (en) | Display substrate, fabrication method thereof and display panel | |
JP7203763B2 (ja) | 表示基板及びその製造方法、表示装置 | |
CN107452894B (zh) | 一种有机电致发光显示面板、其制作方法及显示装置 | |
US11245094B2 (en) | Display substrate and manufacture method thereof, display panel | |
WO2018149158A1 (zh) | Oled显示面板及其制备方法、显示装置 | |
US11871606B2 (en) | Display substrate and display device | |
WO2022068409A1 (zh) | 显示基板及其制备方法、显示装置 | |
WO2021027811A1 (zh) | 显示面板及其制备方法、显示装置 | |
WO2020143552A1 (zh) | 显示基板及其制备方法、显示装置 | |
CN109801954B (zh) | 阵列基板及其制造方法、显示面板及显示装置 | |
US20170205771A1 (en) | Watch and method for manufacturing the same | |
US11569476B2 (en) | Display substrate and display apparatus | |
WO2019109692A1 (zh) | 电子装置基板及制造方法、显示装置 | |
CN112038389A (zh) | 显示基板及其制备方法、显示装置 | |
US11398523B2 (en) | Array substrate and manufacturing method thereof, display panel and display device | |
WO2021155630A1 (zh) | 一种阵列基板及其制备方法、显示面板 | |
CN113241416A (zh) | 发光基板及其制备方法和发光装置 | |
WO2022057500A1 (zh) | 触控基板、显示面板及显示装置 | |
WO2021238645A1 (zh) | 显示用基板及其制备方法、显示装置 | |
US11626458B2 (en) | Transparent display panel and method for manufacturing the same, display device | |
CN111509140A (zh) | 显示用基板及其制备方法、显示装置 | |
WO2023168580A1 (zh) | 显示面板、显示母板及显示装置 | |
WO2023279255A1 (zh) | 显示面板及显示装置 | |
KR20230039795A (ko) | 표시 장치 및 표시 장치의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20850602 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20850602 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20850602 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 03.02.2023) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20850602 Country of ref document: EP Kind code of ref document: A1 |