WO2020096384A1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
WO2020096384A1
WO2020096384A1 PCT/KR2019/015090 KR2019015090W WO2020096384A1 WO 2020096384 A1 WO2020096384 A1 WO 2020096384A1 KR 2019015090 W KR2019015090 W KR 2019015090W WO 2020096384 A1 WO2020096384 A1 WO 2020096384A1
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Prior art keywords
light emitting
light
substrate
blocking layer
light blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/KR2019/015090
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English (en)
French (fr)
Korean (ko)
Inventor
이정훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority to CN201980073256.6A priority Critical patent/CN113056830B/zh
Priority to BR112021008898-9A priority patent/BR112021008898A2/pt
Priority to JP2021523199A priority patent/JP7500556B2/ja
Priority to KR1020217011686A priority patent/KR102857446B1/ko
Priority to EP19882208.2A priority patent/EP3879584A4/en
Publication of WO2020096384A1 publication Critical patent/WO2020096384A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the present invention relates to a light emitting device, and more particularly, to a light emitting device including a plurality of light emitting units.
  • the light emitting diode is an inorganic light source, and is used in various fields such as a display device, a vehicle lamp, and general lighting.
  • Light-emitting diodes have the advantages of long life, low power consumption, and fast response time, so they are rapidly replacing existing light sources.
  • the problem to be solved by the present invention is to provide a light emitting device with improved light efficiency and light extraction.
  • the light emitting device includes a substrate having a first surface and a second surface opposite to the first surface, and light emission disposed on the first surface of the substrate
  • a first light blocking layer exposing at least a portion of a light emitting region in which the light emitting structure is disposed, on a second surface of the structure and the substrate, wherein at least a portion of the second surface of the substrate overlaps the light emitting region It can have an uneven surface.
  • the thickness of the substrate may be smaller than the thickness in the section excluding the uneven surface.
  • the second surface of the substrate further includes a sidewall formed by the uneven surface, wherein the first light blocking film extends to the sidewall of the substrate to cover an end of the uneven surface to cover the light of the light emitting structure.
  • the extraction surface can be defined.
  • the light extraction surface may have a width smaller than that of the uneven surface, and may have a width smaller than that of the emission area.
  • the uneven surface includes a plurality of uneven surfaces, and the uneven surfaces of the light extraction surface and the uneven surfaces covered by the first light blocking film may have different roughness.
  • the first light blocking layer may be formed to have the same width along the sidewall of the substrate.
  • the sidewall of the substrate has an inclination
  • the first light blocking layer has a width that decreases toward the inside of the substrate from the second surface of the substrate, and may have a vertical side surface.
  • the concave-convex surface is disposed in the emission area, and may have a width smaller than that of the emission area.
  • the concave-convex surface covers the light emitting area and may have the same or a larger width than the light emitting area.
  • the light emitting device may further include a second light blocking film surrounding the outside of the light emitting structure on the first surface of the substrate.
  • the first surface of the substrate may have a convex portion in the light emitting region and a concave portion in the region excluding the light emitting region.
  • the light emitting device may further include a second light blocking film filling the recess and surrounding the outside of the light emitting structure.
  • a portion of the second light blocking layer filling the concave portion on the first surface of the substrate and the portion of the first light blocking layer covering the end of the uneven surface on the second surface of the substrate may overlap.
  • the uneven surface includes a plurality of first holes, and the first holes may be formed in an area corresponding to at least the light emitting area.
  • the first light blocking layer may fill the first holes and extend to a second surface of the substrate to cover at least a portion of the light emitting area, thereby defining a light extraction surface of the light emitting structure.
  • the light extraction surface may have a width smaller than that of the emission area.
  • the first holes formed in the light extraction surface may be filled with air.
  • the first holes formed in the light extraction surface may be filled with the first light blocking film.
  • the light emitting device may further include a second light blocking film surrounding the outside of the light emitting structure on the first surface of the substrate.
  • the first surface of the substrate includes a plurality of second holes, but the second light blocking layer may fill at least a portion of the second holes.
  • the light emitting device it is possible to improve color reproducibility by preventing light generated from neighboring light emitting structures from being mixed by the first and second light blocking films.
  • the substrate can support a plurality of light emitting structures and may not be damaged by external impact.
  • the light blocking layer may cover the end of the uneven surface to define a light extraction surface, thereby improving the contrast ratio of the light emitting device.
  • FIG. 1A and 1B are plan views illustrating a light emitting device according to an embodiment of the present invention.
  • FIG. 1C, 1D, and 1E are cross-sectional views of FIG. 1A taken along line A-A '.
  • FIG. 2A is a plan view illustrating a light emitting device according to another embodiment of the present invention.
  • FIG. 2B is a cross-sectional view of FIG. 2A taken along line A-A '.
  • 3A is a cross-sectional view for describing a light emitting device according to an embodiment of the present invention.
  • 3B is a cross-sectional view of the light emitting device of FIG. 3A cut along A-A 'and B-B'.
  • 4A, 4B, 5A, and 5B are cross-sectional views illustrating a concave-convex surface and a second light blocking film structure according to an embodiment of the present invention.
  • 6A is a plan view illustrating a light emitting device according to another embodiment of the present invention.
  • FIG. 6B is a cross-sectional view of the light emitting device of FIG. 6A cut along A-A '.
  • FIG. 7A is a plan view illustrating a light emitting device according to another embodiment of the present invention.
  • 7B and 7C are cross-sectional views of the light emitting device of FIG. 7A taken along line A-A '.
  • 8A and 8B are enlarged views of B of the light emitting device of FIG. 6B.
  • 9 to 13 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
  • FIGS. 1C, 1D, and 1E are cross-sectional views of FIG. 1A taken along line A-A '.
  • 2A is a plan view illustrating a light emitting device according to another embodiment of the present invention
  • FIG. 2B is a cross-sectional view of FIG. 2A taken along line A-A '.
  • 3A is a cross-sectional view illustrating a light emitting device according to an embodiment of the present invention
  • FIG. 3B is a cross-sectional view of the light emitting device of FIG. 3A cut along A-A 'and B-B'.
  • 4A, 4B, 5A, and 5B are cross-sectional views illustrating a concave-convex surface and a second light blocking film structure according to an embodiment of the present invention.
  • the light emitting device includes a substrate 100 and a first stacked on the substrate 100
  • a light emitting structure LED including a light emitting part LE1, a second light emitting part LE2, and a third light emitting part LE3 may be included.
  • FIG. 1A is a plan view seen from the third light emitting unit LE3
  • FIG. 1B is a plan view seen from the substrate 100 direction
  • 2A is a plan view seen from the substrate 100 direction
  • 3A and 3B are diagrams illustrating one light emitting device in more detail.
  • the substrate 100 is a substrate capable of growing a gallium nitride-based semiconductor layer, sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), nitride Aluminum (AlN), gallium oxide (Ga2O3), or silicon.
  • the substrate 100 may be a patterned sapphire substrate.
  • the substrate 100 may include a material through which visible light is transmitted.
  • the substrate 100 may include a first surface SF1 and a second surface SF2 facing the first surface SF1.
  • a plurality of light emitting structures LEDs may be disposed on the first surface SF1 of the substrate 100 spaced apart from each other.
  • the area in which the light emitting structure LED is disposed is referred to as a light emitting area LEA, and the remaining area in which the light emitting structure LED is not arranged is called a light blocking area LSA.
  • the first surface SF1 of the substrate 100 may be a flat surface.
  • the first surface SF1 of the substrate 100 has a convex portion CNV in the light emitting region LEA and a concave portion CNC in the light blocking region LSA.
  • the upper surface of the convex portion CNV of the first surface SF1 may be located at a higher level than the upper surface of the concave portion CNC. Accordingly, a step portion may be formed between the convex portion CNV and the concave portion CN1 of the first surface SF1.
  • the second surface SF2 of the substrate 100 has an uneven surface having irregularities CC It may include a flat surface (PLT) excluding the (RGH) and the uneven surface (RGH).
  • the uneven surface RGH may overlap with at least a portion of the emission area LEA of the first surface SF1 of the substrate 100.
  • the light emitting area LEA has a first width W1 and a concavo-convex surface RGH is smaller than the first width W1. It may have a width (W2). Also, the center of the light emitting area LEA may be concentric with the center of the uneven surface RRG. As another example illustrated in FIG. 1E, the light emitting area LEA may have a first width W1 and the uneven surface RGH may have a second width W2 that is greater than or equal to the first width W1. Also, the center of the light emitting area LEA may be concentric with the center of the uneven surface RRG.
  • the second surface SF2 of the substrate 100 has concave-convex surfaces RGH, light generated from the light-emitting regions LEA is diffusely reflected through the concave-convex surfaces RGH, so that the light of the light emitting device The extraction efficiency can be improved.
  • the first surface SF1 of the substrate 100 is flat
  • the second surface SF2 is the uneven surface RGH and the flat surface PLT
  • the substrate 100 has a first thickness TH1
  • the irregularities of the second surface SF2 of the substrate 100 In each section of the surfaces RGH, the second thickness TH2 may be smaller than the first thickness TH1.
  • the sidewall SDW of the substrate 100 may be defined by each end of each of the uneven surfaces RGH due to the thickness difference of the substrate 100. As another example shown in FIG.
  • the first surface SF1 of the substrate 100 has a convex portion CNV and a concave portion CNC
  • the second surface SF2 has a concave-convex surface RGH and a flat surface PLT )
  • the uneven surface RGH corresponds to the convex portion CNV and may overlap with at least a portion of the convex portion CNV.
  • the substrate 100 In the concave portion CN1 of the first surface SF1 of the substrate 100 and the flat surface PLT of the second surface SF2, the substrate 100 has a first thickness TH1, and the substrate 100 In the convex portion CNV of the first surface SF1 and the uneven surface RGH of the second surface SF2, the substrate 100 may have a second thickness TH2 smaller than the first thickness TH1. have.
  • the thickness of the substrate 100 is relatively thin in the uneven surface RGH section, so that the distance through which the light emitted through the light emitting region LEA passes through the substrate 100 can be reduced. Therefore, the amount of light lost in the substrate 100 among the light generated from the light emitting structure (LED) can be reduced.
  • the thickness of the substrate 100 in the flat surface (PLT) section is relatively thick, the substrate 100 can support the light emitting structure (LED), it is possible to prevent the substrate 100 from being damaged from external impact. .
  • the uneven surfaces CC of the uneven surface RGH have the same shape with each other and may be regularly arranged. According to another embodiment, the uneven surfaces CC of the uneven surface RGH have different shapes and may be irregularly arranged.
  • the sidewall SDW of the substrate 100 defined by the uneven surface RGH in the second surface SF2 of the substrate 100 may have a slope.
  • the space defined by the sidewall SDW of the substrate 100 may have a width that narrows toward the inside from the second surface SF2.
  • the sidewall SDW of the substrate 100 may be vertical.
  • the first The wavelength of the light emitted from the light emitting part LE1 is the shortest, the wavelength of the light emitted from the second light emitting part LE2 is longer than the wavelength of the light emitted from the first light emitting part LE1, and the light emitted from the third light emitting part LE3 It is shorter than the wavelength of the light, and the wavelength of the light emitted from the third light emitting part LE3 may be the longest.
  • the first light emitting unit LE1 emits blue light
  • the second light emitting unit LE2 emits green light
  • the third light emitting unit LE3 emits red light.
  • the present disclosure is not limited thereto.
  • the second light emitting unit LE2 may emit light having a shorter wavelength than the first light emitting unit LE1.
  • the first light emitting unit LE1 includes a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first ohmic layer ( 108)
  • the second light emitting unit LE2 includes a second n-type semiconductor layer 202, a second active layer 204, a second p-type semiconductor layer 206, and a second ohmic layer 208.
  • the third light emitting unit LE3 may include a third n-type semiconductor layer 302, a third active layer 304, a third p-type semiconductor layer 306, and a third ohmic layer 308. have.
  • Each of the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302 may be a gallium nitride-based semiconductor layer doped with Si.
  • Each of the first p-type semiconductor layer 106, the second p-type semiconductor layer 206, and the third p-type semiconductor layer 306 may be a gallium nitride-based semiconductor layer doped with Mg.
  • Each of the first active layer 104, the second active layer 204, and the third active layer 304 may include a multi-quantum well (MQW) structure, and its composition ratio to emit light having a desired peak wavelength Can be determined.
  • MQW multi-quantum well
  • Each of the first ohmic layer 108, the second ohmic layer 208, and the third ohmic layer 308 is tin oxide (SnO), indium oxide (InO2), zinc oxide (ZnO), indium tin oxide ( ITO), and a transparent oxide layer (TCO) such as indium tin oxide (ITZO) may be used.
  • the first light emitting part LE1 may be arranged to be spaced apart from the second light emitting part LE2.
  • the first ohmic layer 108 of the first light emitting unit LE1 may face the second ohmic layer 208 of the second light emitting unit LE2.
  • the first ohmic layer 108 of the first light emitting part LE1 and the second n-type semiconductor layer 202 of the second light emitting part LE2 may be faced.
  • the second light emitting part LE2 may be arranged to be spaced apart from the third light emitting part LE3.
  • the second ohmic layer 208 of the second light emitting unit LE2 may face the third ohmic layer 308 of the third light emitting unit LE3.
  • the second ohmic layer 208 of the second light emitting unit LE2 may face the third n-type semiconductor layer 302 of the third light emitting unit LE3.
  • the light emitting device includes a first adhesive part AD1 that bonds between the first light emitting part LE1 and the second light emitting part LE2 between the first light emitting part LE1 and the second light emitting part LE2 spaced apart from each other, and A second adhesive portion AD2 that bonds between the second and second light emitting portions LE2 and LE3 between the second and second light emitting portions LE2 and LE3 spaced apart from each other may be further included.
  • Each of the first adhesive portion AD1 and the second adhesive portion AD2 may transmit visible light and include an insulating material.
  • Each of the first adhesive portion AD1 and the second adhesive portion AD2 may include a polymer, a resist, or a polyimide.
  • each of the first adhesive portion AD1 and the second adhesive portion AD2 is Spin-On-Glass (SOG), BenzoCycloButadiene (BCB), Hydrogen SilsesQuioxanes (HSQ), SU-8 photoresist, epoxy, PAE ( Poly arylene ether (Flare TM) , MSSQ (methylsilsesquioxane), PMMA (polymethylmethacrylate), PDMS (polydimethylsiloxane), fluoropolymer, polyimide, PEEK (polyethereherketone), ATSP (Aromatic Thermosetting Poyester), PVDC (Polyvinylidene chloride), LCP (liquid- crystal polymer), and wax (wax) or the like.
  • SOG Spin-On-Glass
  • BCB BenzoCycloButadiene
  • HSQ Hydrogen SilsesQuioxanes
  • SU-8 photoresist epoxy
  • PAE Poly arylene ether (F
  • the light emitting element is disposed between the first color filter CF1 and the second light emitting unit LE2 and the third light emitting unit LE3 disposed between the first light emitting unit LE1 and the second light emitting unit LE2.
  • a second color filter CF2 may be further included.
  • the first color filter CF1 may be disposed on the first ohmic layer 108 of the first light emitting unit LE1 or the second ohmic layer 208 of the second light emitting unit LE2.
  • the second color filter CF2 may be disposed on the second n-type semiconductor layer 202 of the second light emitting part LE2 or the third ohmic layer 308 of the third light emitting part LE3.
  • the first color filter CF1 is generated from the first light emitting part LE1 so that light generated from the first light emitting part LE1 does not affect each of the second light emitting part LE2 and the third light emitting part LE3.
  • the reflected light may be reflected, and light generated from each of the second light emitting part LE2 and the third light emitting part LE3 may pass through.
  • the second color filter CF2 includes the first light emitting unit LE1 and the first light emitting unit LE1 so that light generated from each of the first light emitting unit LE1 and the second light emitting unit LE2 does not affect the third light emitting unit LE3.
  • the light generated from the second light emitting unit LE2 may be reflected, and the light generated from the third light emitting unit LE3 may pass.
  • Each of the first color filter CF1 and the second color filter CF2 may include a distributed Bragg Reflector (DBR) having a structure in which TiO2 and SiO2 are alternately stacked.
  • the first color filter CF1 may have a different number and thickness of alternating second color filters CF2 and TiO2 and SiO2. According to an embodiment, the first color filter CF1 and the second color filter CF2 may be omitted.
  • DBR distributed Bragg Reflector
  • the light emitting device includes a first pad PD1 electrically connected to the first ohmic layer 108, a second pad PD2 electrically connected to the second ohmic layer 208, and a third ohmic layer 308.
  • the third pad PD3 electrically connected to the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302 are electrically connected in common. It may further include a common pad (CPD).
  • the substrate 100 has a rectangular structure, and each of the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD is a substrate. It may be disposed at each corner of (100).
  • the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302 is illustratively described as being connected to a common pad (CPD),
  • the first ohmic layer 108, the second ohmic layer 208, and the third ohmic layer 308 may be connected to a common pad (CPD).
  • the light emitting device includes a third light emitting part LE3, a second color filter CF2, a second adhesive part AD2, a second light emitting part LE2, and a first adhesive part AD1.
  • a first via pattern VA1 that penetrates the first color filter CF1 and electrically connects the first ohmic layer 108 and the first pad PD1, and a third light emitting part LE3,
  • the second ohmic layer penetrates the second color filter CF2, the second adhesive portion AD2, the second n-type semiconductor layer 202, the second active layer 204, and the second p-type semiconductor layer 206.
  • the light emitting element includes a third light emitting part LE3, a second color filter CF2, a second adhesive part AD2, a second light emitting part LE2, a first adhesive part AD1, and a first color filter CF1.
  • the second n-type semiconductor layer 202 and the common pad (CPD) pass through the fourth via pattern VA4, the third light emitting part LE3, the second color filter CF2, and the second adhesive part AD2.
  • a fifth via pattern VA5 electrically connecting to the third via-type semiconductor layer 302 and electrically connecting the third n-type semiconductor layer 302 and the common pad CPD to the sixth via
  • the pattern VA6 may be further included.
  • the sixth via pattern VA6 may be omitted.
  • the first light emitting unit LE1, the second light emitting unit LE2, and the third light emitting unit LE3 in which the light emitting structures (LEDs) are vertically stacked include the first light emitting unit LE1 and the first light emitting unit LE1.
  • the light emitting device including the second light emitting part LE2 and the via patterns VA1, VA2, VA3, VA4, VA5, and VA6 penetrating the third light emitting part LE3 is exemplarily described.
  • the first light emitting part LE1, the second light emitting part LE2, and the third light emitting part LE3 are etched to etch the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type
  • the semiconductor layer 302, the first ohmic layer 108, the second ohmic layer 208, and the third ohmic layer 308 may be exposed.
  • the light emitting device may have a structure in which the first light emitting part LE1, the second light emitting part LE2, and the third light emitting part LE3 are horizontally arranged on the same plane. Meanwhile, the light emitting device may have one light emitting unit.
  • the light-emitting element, the light-emitting structure on the first surface SF1 of the substrate 100 may further include a first light blocking layer LS1 surrounding the outer wall and filling between adjacent light emitting structures (LEDs).
  • the first light blocking layer LS1 blocks, absorbs, or reflects light generated from each of the light emitting structures LED so that light generated from each of the light emitting structures LED does not mix with the light of the adjacent light emitting structures LED.
  • It may include a material having an insulating property.
  • the first light blocking layer LS1 may include materials such as photoresist, epoxy, polydimethylsiloxane (PDMS), and black matrix.
  • the light emitting device may further include a second light blocking layer LS2 having an opening exposing at least a portion of the uneven surface RGH on the second surface SF2 of the substrate 100.
  • the uneven surface RGH exposed by the opening may be the light extraction surface LEX.
  • the second light blocking layer LS2 may include metals such as Ti, Ni, Al, Ag, and Cr, or may include materials such as photoresist, epoxy, PDMS, and black matrix.
  • the light extraction surface LEX is illustrated as having a rectangular structure in plan view in FIGS. 1B and 2A, but the light extraction surface LEX may have a polygonal or circular structure such as a triangle.
  • the second light blocking layer LS2 exposes the uneven surface RGH, is disposed on the second surface SF2 of the substrate 100, and the substrate 100 It may not be formed on the sidewall (SDW) of the. That is, the second light blocking layer LS2 may not cover the uneven surface RRG.
  • the second light blocking layer LS2 is a sidewall SDW of the substrate 100 on the second surface SF2 of the substrate 100 It can be extended to cover the end of the uneven surface (RGH).
  • the opening may expose a portion of the uneven surface RGH.
  • the center of the opening may be concentric with the center of the concavo-convex surface (RGH).
  • the uneven surface RGH exposed by the opening of the second light blocking layer LS2 may be the light extraction surface LEX.
  • the second light blocking layer LS2 has the same thickness on the side surface SDW of the substrate 100, and the second light blocking layer LS2 is on the side surface SDW of the substrate 100. It can have an inclined side. As another example shown in FIG. 4B, the second light blocking layer LS2 has a smaller thickness from the side SDW of the substrate 100 to the inside of the substrate 100 from the second surface SF2 of the substrate 100 , The second light blocking layer LS2 may have a side surface perpendicular to a side portion of the substrate 100.
  • the second light blocking layer LS2 covering the sidewall SDW may have regions overlapping each other. Light mixed between adjacent light emitting structures LED may be prevented by the first light blocking layer LS1 and the second light blocking layer LS2 overlapping each other.
  • the second width W2 of the concavo-convex surface RGH is equal to or greater than the first width W1 of the light-emitting area LEA, and the second light blocking layer LS2 is the light-emitting area
  • the uneven surface RGH may be relatively thickly covered.
  • the light generated from the adjacent light emitting structure (LED) may be diffusely reflected by the uneven surfaces CC of the uneven surface RGH covered by the second light blocking layer LS2, and may be extinguished. 2 It can be absorbed, blocked, and reflected by the light blocking layer LS2 to prevent color mixing.
  • the uneven surfaces CC of the uneven surface RGH covered by the second light blocking film LS2 have a first roughness
  • the uneven surfaces exposed by the opening of the second light blocking film LS2 The irregularities CC of the surface RGH may have a second roughness different from the first roughness.
  • the first roughness may be greater than the second roughness.
  • the first roughness may be smaller than the second roughness.
  • the second light blocking layer LS2 may prevent light generated from neighboring light emitting structures LEDs from being mixed together with the first light blocking layer LS1, thereby preventing color mixing.
  • FIG. 6A is a plan view illustrating a light emitting device according to another embodiment of the present invention
  • FIG. 6B is a cross-sectional view of the light emitting device of FIG. 6A taken along line A-A '
  • 7A is a plan view illustrating a light emitting device according to another embodiment of the present invention
  • FIGS. 7B and 7C are cross-sectional views of the light emitting device of FIG. 7A taken along line A-A '.
  • 8A and 8B are enlarged views of B of the light emitting device of FIG. 6B.
  • FIGS. 6A and 7A are plan views seen from a substrate.
  • the light emitting device is a substrate 100 and a first light emitting part LE1 vertically stacked on the first surface SF1 of the substrate 100 ,
  • a blocking layer LS1 and a second light blocking layer LS2 disposed on the second surface SF2 facing the first surface SF1 of the substrate 100 may be included.
  • the first surface SF1 of the substrate 100 includes a light emitting area LEA in which a light emitting structure LED is disposed, and a light blocking area LSA in which the first light blocking layer LS1 except for the light emitting area LEA is disposed. It can contain.
  • the emission area LEA may have a first width W1.
  • the first surface SF1 of the substrate 100 may have a flat surface.
  • the first surface SF1 of the substrate 100 may include a plurality of first holes HL1.
  • the first holes HL1 disposed in the light blocking area LSA may be filled by the first light blocking layer LS1.
  • the first holes HL1 disposed in the light emitting area LEA on the first surface SF1 of the substrate 100 are also shown to be filled by the first light blocking layer LS1, the first holes SF1 are disposed in the light emitting area LEA.
  • One hole HL1 may be filled with air.
  • the first holes HL1 are shown to be formed on the front surface of the first surface SF1 of the substrate 100, but the first holes HL1 of the first surface SF1 of the substrate 100 It may be selectively formed only in the emission area LEA, or may be selectively formed only in the light blocking area LSA of the first surface SF1 of the substrate 100.
  • each of the first holes HL1 are regularly spaced from each other and are regularly arranged, and may have the same structure.
  • each of the first holes HL1 may be irregularly arranged and have different structures from each other.
  • each of the first holes HL1 filled with the first light blocking layer LS1 is illustrated as having a conical structure, but the first holes HL1 may have a cylindrical structure.
  • the second surface SF2 of the substrate 100 may include a plurality of second holes HL2.
  • each of the second holes HL2 may have a conical structure.
  • each of the second holes HL2 may have a cylindrical structure.
  • each of the second holes HL2 are regularly spaced from each other and are regularly arranged, and may have the same structure.
  • each of the second holes HL2 may be irregularly arranged and have different structures from each other.
  • the second holes HL2 are shown to be formed on the front surface of the second surface SF2 of the substrate 100, but the second holes HL2 are light extraction surfaces LEX ) Is selectively formed only in the section corresponding to, or is selectively formed only in the section corresponding to the light emitting area LEA of the first surface SF1 of the substrate 100, or of the first surface SF1 of the substrate 100 It may be selectively formed only in a section corresponding to the light blocking area LSA.
  • the second light blocking layer LS2 may be disposed while filling the second holes HL2, and the second light blocking layer LS2 may include an opening overlapping at least a portion of the emission area LEA.
  • the opening is disposed in the emission area LEA of the first surface SF1 of the substrate 100 and may have a third width W3 smaller than the first width W1 of the emission area LEA.
  • the second surface SF2 of the substrate 100 exposed by the opening may be a light extraction surface LEX.
  • the light extraction surface LEX may have a third width W3 smaller than the first width W1 of the emission area LEA.
  • the second holes HL2 disposed in the opening of the second light blocking layer LS2 may be exposed to the outside. That is, air may be filled in the second holes HL2 disposed in the opening.
  • the second light blocking layer LS2 may be filled inside the second holes HL2 disposed in the opening.
  • the second light blocking layer LS2 covers a portion of the light emitting area LEA to define a light extraction surface LEX having a small area, so that the contrast ratio of the light emitting device can be improved.
  • light is diffusely reflected by the plurality of second holes HL2 on the light extraction surface LEX, so that light extraction of the light emitting device may be improved.
  • the first holes HL1 filled with the first light blocking layer LS1 and the second light blocking layer LS2 disposed in an area other than the light extraction surface LEX fill to reflect light generated from neighboring light emitting structures (LEDs). , It can be absorbed and blocked to prevent color mixing, thereby improving color reproducibility.
  • FIGS. 6A, 6B, 7A, 7B, 7C, 8A, and 8B Components not described in FIGS. 6A, 6B, 7A, 7B, 7C, 8A, and 8B are illustrated in FIGS. 1A, 1B, 1C, 1D, 1E, 2A, 2B, and 3a, and the components described in FIG. 3b are substantially the same, and detailed description thereof will be omitted.
  • 9 to 13 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
  • a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first ohmic layer 108 are formed on the first substrate 100. It can be formed sequentially.
  • the first n-type semiconductor layer 102, the first active layer 104, and the first p-type semiconductor layer 106 on the first substrate 100 are MOCVD (Metal-Organic Chemical Vapor Deposition), MBE (Molecular Beam) Epitaxy), HVPE (Hydride Vapor Phase Epitaxy), MOC (Metal-Organic Chloride) can be sequentially formed using growth methods.
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • MBE Molecular Beam Epitaxy
  • HVPE Hydride Vapor Phase Epitaxy
  • MOC Metal-Organic Chloride
  • the first ohmic layer 108 may be formed on the first p-type semiconductor layer 106 through a chemical vapor deposition (CVD)
  • the second n-type semiconductor layer 202, the second active layer 204, the second p-type semiconductor layer 206, and the second ohmic layer 208 are sequentially formed on the second substrate (not shown).
  • the second light emitting part LE2 may be formed.
  • the second n-type semiconductor layer 202, the second active layer 204, and the second p-type semiconductor layer 206 are sequentially formed on the second substrate using growth methods such as MOCVD, MBE, HVPE, and MOC. can do.
  • the second ohmic layer 208 may be formed on the second p-type semiconductor layer 206 through a CVD or PVD process.
  • the second substrate is turned over and the second ohmic layer 208 is disposed to face the first ohmic layer 108, and the second light emitting part LE2 is attached to the first light emitting part LE1 through the first adhesive part AD1. Can be glued.
  • the second substrate is subjected to a laser lift-off (LLO) process or a chemical lift-off (CLO) process. Can be removed through.
  • LLO laser lift-off
  • CLO chemical lift-off
  • a third n-type semiconductor layer 302, a third active layer 304, a third p-type semiconductor layer 306, and a third ohmic layer 308 are sequentially formed on a third substrate (not shown).
  • the third light emitting part LE3 may be formed.
  • the third n-type semiconductor layer 302, the third active layer 304, and the third p-type semiconductor layer 306 are sequentially formed using growth methods such as MOCVD, MBE, HVPE, and MOC. can do.
  • the third ohmic layer 308 may be formed on the third p-type semiconductor layer 306 through a CVD or PVD process.
  • the third substrate is turned over so as to face the second n-type semiconductor layer 202 of the second light emitting part LE2 and the third ohmic layer 308 of the third light emitting part LE3, and the second adhesive part AD2 is disposed. Through this, the second light emitting part LE2 and the third light emitting part LE3 may be bonded. After bonding the second light emitting part LE2 and the third light emitting part LE3 with the second adhesive part AD2, the third substrate may be removed through an LLO or CLO process.
  • a first via hole (not shown) exposing the first n-type semiconductor layer 102 by etching the third light emitting part LE3, the second light emitting part LE2, and the first light emitting part LE1,
  • the second via hole exposing the second n-type semiconductor layer 202 (not shown), the third via hole exposing the third n-type semiconductor layer 302 (not shown), the first ohmic layer 108
  • a fourth via hole exposing (not shown), a fifth via hole exposing the second ohmic layer 208 (not shown), and a sixth via hole exposing the third ohmic layer 308 (not shown) Can form.
  • the first light emitting part LE1 while forming the first via hole, the second via hole, the third via hole, the fourth via hole, the fifth via hole, and the sixth via hole, the first light emitting part LE1, the second light emitting part LE2, And exposing the substrate 100 by etching the third light emitting part LE3 to separate the light emitting devices.
  • a passivation film that does not fill each of the first via hole, the second via hole, the third via hole, the fourth via hole, the fifth via hole, and the sixth via hole and extends to the upper surface of the third n-type semiconductor layer 302 is formed.
  • PVT passivation film
  • the first passivation layer is etched to expose the first n-type semiconductor layer 102 on the bottom surface of the first via hole, the second n-type semiconductor layer 202 is exposed on the bottom surface of the second via hole, and the third via hole bottom surface is exposed.
  • the ohmic layer 308 may be exposed.
  • the first via pattern VA1, the second via pattern VA2 filling the first via hole, the second via hole, the third via hole, the fourth via hole, the fifth via hole, and the sixth via hole on which the passivation film PVT is formed,
  • the third via pattern VA3, the fourth via pattern VA4, the fifth via pattern VA5, and the sixth via pattern VA6 may be formed, respectively.
  • the first via pattern VA1 fills the first via hole and is in electrical contact with the first n-type semiconductor layer 102
  • the second via pattern VA2 fills the second via hole and fills the second n-type semiconductor layer 202
  • the third via pattern VA3 fills the third via hole and electrically contacts the third n-type semiconductor layer 302
  • the fourth via pattern VA4 fills the fourth via hole
  • the fifth via pattern VA5 fills the fifth via hole and is in electrical contact with the second ohmic layer 208
  • the sixth via pattern VA6 fills the sixth via hole.
  • the ohmic layer 308 may be in electrical contact.
  • the first via pattern VA1, the second via pattern VA2, the third via pattern VA3, the fourth via pattern VA4, the fifth via pattern VA5, and the sixth via may be coplanar with the upper surface of the passivation film PVT.
  • the first pad PD1 in electrical contact with the first via pattern VA1 on the first via pattern VA1 and the second via pattern VA2 in electrical contact with the second via pattern VA2
  • the second pad PD2, the third pad PD3 in electrical contact with the third via pattern VA3 on the third via pattern VA3, the fourth via pattern VA4, and the fifth via pattern ( VA5), and a common pad CPD in electrical contact with the fourth via pattern VA4, the fifth via pattern VA5, and the sixth via pattern VA6 on the sixth via pattern VA6.
  • the third light emitting part LE3, the second light emitting part LE2, and the first light emitting part LE1 may be sequentially etched to separate the devices into each of the light emitting structures LED.
  • a part of the substrate 100 under the first light emitting part LE1 may be etched in the etching process.
  • the first surface SF1 of the substrate 100 may include a convex portion CNV covered by a light emitting structure LED and an etched concave portion CNC.
  • the substrate 100 may not be etched in the etching process as shown in the light emitting devices illustrated in FIGS. 1C, 1E, and 2B.
  • the light emitting structure (LED) may have an inclined side wall. According to another embodiment, the light emitting structure (LED) may have vertical sidewalls.
  • a first light blocking layer LS1 filling between the light emitting structures LED may be formed.
  • the first light blocking layer LS1 may be formed while filling the recessed portion CNC of the first surface SF1 of the substrate 100.
  • the first light blocking layer LS1 may cover sidewalls of the substrate 100.
  • the light emitting area LEA can be defined.
  • the light emitting structure (LED) has a width gradually increasing from the third light emitting part (LE3) to the first light emitting part (LE1)
  • the light emitting area (LEA) is the same as the largest width of the light emitting structure (LED) It may have a width (W1).
  • the first light blocking layer LS1 is the same as the upper surface of each of the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD of the light emitting structure LED. It can have a top surface of the level.
  • each of the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD is not formed in FIG. 9, and after forming the first light blocking layer LS1
  • Each of the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD may be formed to extend above the first light blocking layer LS1.
  • the second surface SF2 of the substrate 100 may be etched to form an uneven surface RGH including uneven surfaces CC.
  • a mask pattern (not shown) is formed on the second surface SF2 of the substrate 100, and the second surface is formed using wet etching and / or dry etching using the mask pattern as an etching mask.
  • SF2 may be etched to form irregularities CC. After forming the uneven surface RGH, the mask pattern may be removed.
  • the uneven surface RGH including the uneven surfaces CC may be formed to overlap with at least a portion of the emission area LEA.
  • the uneven surface RGH is formed in the emission area LEA and may have a second width W2 smaller than the first width W1.
  • the center of the uneven surface RGH may be the same as the center of the light emitting area LEA.
  • the uneven surface RGH illustrated in FIG. 1E may have a second width W2 greater than or equal to the first width W1.
  • the center of the uneven surface RGH may be the same as the center of the light emitting area LEA.
  • a second light blocking layer LS2 may be formed on the second surface SF2 of the substrate 100.
  • the second light blocking layer LS2 may be continuously and thinly formed along the uneven surface RGH and the flat surface PLT of the second surface SF2 of the substrate 100.
  • the first light blocking layer LS1 formed on the recessed part CNC of the first surface SF1 of the substrate 100 and the uneven surface RG of the second surface SF2 of the substrate 100 may overlap.
  • the second light blocking layer LS2 may be etched to form an opening exposing the light extraction surface LEX having a third width W3 smaller than the second width W2.
  • the second light blocking layer LS2 may be second etched following the etching process of FIG. 12 in the uneven surface RGH portion from which the second light blocking layer LS2 is removed. Accordingly, as illustrated in FIGS. 5A and 5B, it may have a roughness different from that of the portion covered by the second light blocking layer LS2. As an example illustrated in FIG. 5A, a portion covered by the second light blocking layer LS2 has a first roughness, and a portion exposed by the second light blocking layer LS2 may have a second roughness greater than the first roughness. have. As another example illustrated in FIG. 5B, a portion covered by the second light blocking layer LS2 has a first roughness, and a portion exposed by the second light blocking layer LS2 may have a second roughness smaller than the first roughness. have.
  • an uneven surface RGH may be formed after forming the second light blocking layer LS2.
  • the light emitting devices illustrated in FIGS. 2A and 2B may be completed.

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JP2021523199A JP7500556B2 (ja) 2018-11-07 2019-11-07 発光ダイオード
KR1020217011686A KR102857446B1 (ko) 2018-11-07 2019-11-07 발광 소자
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JP7500556B2 (ja) 2024-06-17
EP3879584A1 (en) 2021-09-15
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BR112021008898A2 (pt) 2021-08-10
EP3879584A4 (en) 2022-08-03
US20240154061A1 (en) 2024-05-09
US20200144448A1 (en) 2020-05-07
KR102857446B1 (ko) 2025-09-09
US11916168B2 (en) 2024-02-27
CN113056830B (zh) 2024-08-23
US11271136B2 (en) 2022-03-08
US20220262982A1 (en) 2022-08-18
CN210743973U (zh) 2020-06-12
KR20210074301A (ko) 2021-06-21

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