JP7500556B2 - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP7500556B2
JP7500556B2 JP2021523199A JP2021523199A JP7500556B2 JP 7500556 B2 JP7500556 B2 JP 7500556B2 JP 2021523199 A JP2021523199 A JP 2021523199A JP 2021523199 A JP2021523199 A JP 2021523199A JP 7500556 B2 JP7500556 B2 JP 7500556B2
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JP
Japan
Prior art keywords
light
substrate
emitting device
shielding layer
emitting
Prior art date
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Active
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JP2021523199A
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English (en)
Japanese (ja)
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JP2022506047A5 (https=
JP2022506047A (ja
Inventor
フン イ，チョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication of JP2022506047A publication Critical patent/JP2022506047A/ja
Publication of JP2022506047A5 publication Critical patent/JP2022506047A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2021523199A 2018-11-07 2019-11-07 発光ダイオード Active JP7500556B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862756935P 2018-11-07 2018-11-07
US62/756,935 2018-11-07
US16/672,676 2019-11-04
US16/672,676 US11271136B2 (en) 2018-11-07 2019-11-04 Light emitting device
PCT/KR2019/015090 WO2020096384A1 (ko) 2018-11-07 2019-11-07 발광 소자

Publications (3)

Publication Number Publication Date
JP2022506047A JP2022506047A (ja) 2022-01-17
JP2022506047A5 JP2022506047A5 (https=) 2022-11-11
JP7500556B2 true JP7500556B2 (ja) 2024-06-17

Family

ID=70458746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021523199A Active JP7500556B2 (ja) 2018-11-07 2019-11-07 発光ダイオード

Country Status (7)

Country Link
US (3) US11271136B2 (https=)
EP (1) EP3879584A4 (https=)
JP (1) JP7500556B2 (https=)
KR (1) KR102857446B1 (https=)
CN (2) CN210743973U (https=)
BR (1) BR112021008898A2 (https=)
WO (1) WO2020096384A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
US12080687B2 (en) * 2020-10-16 2024-09-03 Seoul Viosys Co., Ltd. Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same
WO2024074702A1 (en) * 2022-10-06 2024-04-11 Ams-Osram International Gmbh Light emitting device
WO2025105266A1 (ja) * 2023-11-15 2025-05-22 日亜化学工業株式会社 発光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094122A (ja) 2000-07-13 2002-03-29 Matsushita Electric Works Ltd 光源装置及びその製造方法
JP2014167948A (ja) 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
JP2014527313A (ja) 2011-09-16 2014-10-09 ソウル バイオシス カンパニー リミテッド 発光ダイオード及びそれを製造する方法
JP2015056650A (ja) 2013-09-13 2015-03-23 株式会社東芝 発光装置
US20180151780A1 (en) 2016-11-25 2018-05-31 Seoul Viosys Co., Ltd. Light emitting diode having light blocking layer

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JP2002289357A (ja) 2001-03-28 2002-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
KR101087567B1 (ko) 2004-03-23 2011-11-28 엘지디스플레이 주식회사 유기전계발광 소자 및 그 제조방법
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2008251561A (ja) 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
RU2436195C1 (ru) * 2007-12-28 2011-12-10 Нития Корпорейшн Полупроводниковый светоизлучающий прибор и способ его изготовления
KR101769048B1 (ko) 2010-12-22 2017-08-17 엘지이노텍 주식회사 발광 소자, 이를 포함하는 발광소자 패키지 및 조명 장치
EP2442374B1 (en) 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Light emitting device
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
KR20140066397A (ko) * 2012-11-23 2014-06-02 서울바이오시스 주식회사 복수개의 단위 발광소자들을 갖는 발광다이오드
KR102087947B1 (ko) * 2014-07-18 2020-03-11 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
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TWI588984B (zh) * 2016-03-14 2017-06-21 群創光電股份有限公司 顯示裝置
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JP6428730B2 (ja) * 2016-08-24 2018-11-28 日亜化学工業株式会社 発光装置
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US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094122A (ja) 2000-07-13 2002-03-29 Matsushita Electric Works Ltd 光源装置及びその製造方法
JP2014527313A (ja) 2011-09-16 2014-10-09 ソウル バイオシス カンパニー リミテッド 発光ダイオード及びそれを製造する方法
JP2014167948A (ja) 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
JP2015056650A (ja) 2013-09-13 2015-03-23 株式会社東芝 発光装置
US20180151780A1 (en) 2016-11-25 2018-05-31 Seoul Viosys Co., Ltd. Light emitting diode having light blocking layer

Also Published As

Publication number Publication date
CN113056830A (zh) 2021-06-29
EP3879584A1 (en) 2021-09-15
JP2022506047A (ja) 2022-01-17
BR112021008898A2 (pt) 2021-08-10
EP3879584A4 (en) 2022-08-03
US20240154061A1 (en) 2024-05-09
US20200144448A1 (en) 2020-05-07
KR102857446B1 (ko) 2025-09-09
WO2020096384A1 (ko) 2020-05-14
US11916168B2 (en) 2024-02-27
CN113056830B (zh) 2024-08-23
US11271136B2 (en) 2022-03-08
US20220262982A1 (en) 2022-08-18
CN210743973U (zh) 2020-06-12
KR20210074301A (ko) 2021-06-21

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