BR112021008898A2 - dispositivo emissor de luz - Google Patents
dispositivo emissor de luz Download PDFInfo
- Publication number
- BR112021008898A2 BR112021008898A2 BR112021008898-9A BR112021008898A BR112021008898A2 BR 112021008898 A2 BR112021008898 A2 BR 112021008898A2 BR 112021008898 A BR112021008898 A BR 112021008898A BR 112021008898 A2 BR112021008898 A2 BR 112021008898A2
- Authority
- BR
- Brazil
- Prior art keywords
- light
- substrate
- emitting
- emitting device
- shielding layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862756935P | 2018-11-07 | 2018-11-07 | |
| US62/756,935 | 2018-11-07 | ||
| US16/672,676 | 2019-11-04 | ||
| US16/672,676 US11271136B2 (en) | 2018-11-07 | 2019-11-04 | Light emitting device |
| PCT/KR2019/015090 WO2020096384A1 (ko) | 2018-11-07 | 2019-11-07 | 발광 소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112021008898A2 true BR112021008898A2 (pt) | 2021-08-10 |
Family
ID=70458746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112021008898-9A BR112021008898A2 (pt) | 2018-11-07 | 2019-11-07 | dispositivo emissor de luz |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11271136B2 (https=) |
| EP (1) | EP3879584A4 (https=) |
| JP (1) | JP7500556B2 (https=) |
| KR (1) | KR102857446B1 (https=) |
| CN (2) | CN210743973U (https=) |
| BR (1) | BR112021008898A2 (https=) |
| WO (1) | WO2020096384A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11282984B2 (en) * | 2018-10-05 | 2022-03-22 | Seoul Viosys Co., Ltd. | Light emitting device |
| US11271136B2 (en) * | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
| US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US11862616B2 (en) * | 2020-02-26 | 2024-01-02 | Seoul Viosys Co., Ltd. | Multi wavelength light emitting device and method of fabricating the same |
| US12080687B2 (en) * | 2020-10-16 | 2024-09-03 | Seoul Viosys Co., Ltd. | Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same |
| WO2024074702A1 (en) * | 2022-10-06 | 2024-04-11 | Ams-Osram International Gmbh | Light emitting device |
| WO2025105266A1 (ja) * | 2023-11-15 | 2025-05-22 | 日亜化学工業株式会社 | 発光素子 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4432275B2 (ja) * | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | 光源装置 |
| JP2002289357A (ja) | 2001-03-28 | 2002-10-04 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
| KR101087567B1 (ko) | 2004-03-23 | 2011-11-28 | 엘지디스플레이 주식회사 | 유기전계발광 소자 및 그 제조방법 |
| US7524686B2 (en) * | 2005-01-11 | 2009-04-28 | Semileds Corporation | Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
| US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
| US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
| JP2008251561A (ja) | 2007-03-29 | 2008-10-16 | Toyoda Gosei Co Ltd | 表示装置 |
| RU2436195C1 (ru) * | 2007-12-28 | 2011-12-10 | Нития Корпорейшн | Полупроводниковый светоизлучающий прибор и способ его изготовления |
| KR101769048B1 (ko) | 2010-12-22 | 2017-08-17 | 엘지이노텍 주식회사 | 발광 소자, 이를 포함하는 발광소자 패키지 및 조명 장치 |
| EP2442374B1 (en) | 2010-10-12 | 2016-09-21 | LG Innotek Co., Ltd. | Light emitting device |
| JP5862354B2 (ja) * | 2011-04-15 | 2016-02-16 | 三菱化学株式会社 | 窒化物系発光ダイオード素子とその製造方法 |
| CN106058000B (zh) | 2011-09-16 | 2019-04-23 | 首尔伟傲世有限公司 | 发光二极管及制造该发光二极管的方法 |
| KR20140066397A (ko) * | 2012-11-23 | 2014-06-02 | 서울바이오시스 주식회사 | 복수개의 단위 발광소자들을 갖는 발광다이오드 |
| JP2014167948A (ja) * | 2013-01-30 | 2014-09-11 | Mitsubishi Chemicals Corp | 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置 |
| KR102087947B1 (ko) * | 2014-07-18 | 2020-03-11 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조 방법 |
| WO2015032678A1 (en) * | 2013-09-06 | 2015-03-12 | Teijin Aramid B.V. | Separator paper for electrochemical cells |
| JP2015056650A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 発光装置 |
| KR20150102179A (ko) | 2014-02-27 | 2015-09-07 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| DE102014106585A1 (de) * | 2014-05-09 | 2015-11-12 | Leonhard Kurz Stiftung & Co. Kg | Mehrschichtkörper und Verfahren zu dessen Herstellung |
| US9608168B2 (en) * | 2014-06-13 | 2017-03-28 | Seoul Viosys Co., Ltd. | Light emitting diode |
| JP2016046461A (ja) * | 2014-08-26 | 2016-04-04 | 豊田合成株式会社 | 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法 |
| JP6852066B2 (ja) * | 2015-10-19 | 2021-03-31 | ルミレッズ ホールディング ベーフェー | テクスチャ基板を有する波長変換式発光デバイス |
| TWI588984B (zh) * | 2016-03-14 | 2017-06-21 | 群創光電股份有限公司 | 顯示裝置 |
| JP6564348B2 (ja) * | 2016-06-06 | 2019-08-21 | 日機装株式会社 | 深紫外発光素子 |
| JP6428730B2 (ja) * | 2016-08-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
| JP6871706B2 (ja) * | 2016-09-30 | 2021-05-12 | 日機装株式会社 | 半導体発光素子の製造方法 |
| US10340425B2 (en) * | 2016-11-25 | 2019-07-02 | Seoul Viosys Co., Ltd. | Light emitting diode having light blocking layer |
| KR102734057B1 (ko) * | 2017-02-24 | 2024-11-26 | 서울바이오시스 주식회사 | 광 차단층을 가지는 발광 다이오드 |
| JP7255965B2 (ja) * | 2017-08-24 | 2023-04-11 | 日機装株式会社 | 半導体発光素子の製造方法 |
| US11121299B2 (en) * | 2018-10-31 | 2021-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US11482650B2 (en) * | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
| US11271136B2 (en) * | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
-
2019
- 2019-11-04 US US16/672,676 patent/US11271136B2/en active Active
- 2019-11-07 EP EP19882208.2A patent/EP3879584A4/en active Pending
- 2019-11-07 JP JP2021523199A patent/JP7500556B2/ja active Active
- 2019-11-07 CN CN201921916450.XU patent/CN210743973U/zh active Active
- 2019-11-07 KR KR1020217011686A patent/KR102857446B1/ko active Active
- 2019-11-07 CN CN201980073256.6A patent/CN113056830B/zh active Active
- 2019-11-07 BR BR112021008898-9A patent/BR112021008898A2/pt active Search and Examination
- 2019-11-07 WO PCT/KR2019/015090 patent/WO2020096384A1/ko not_active Ceased
-
2022
- 2022-01-05 US US17/569,219 patent/US11916168B2/en active Active
-
2024
- 2024-01-16 US US18/413,921 patent/US20240154061A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN113056830A (zh) | 2021-06-29 |
| JP7500556B2 (ja) | 2024-06-17 |
| EP3879584A1 (en) | 2021-09-15 |
| JP2022506047A (ja) | 2022-01-17 |
| EP3879584A4 (en) | 2022-08-03 |
| US20240154061A1 (en) | 2024-05-09 |
| US20200144448A1 (en) | 2020-05-07 |
| KR102857446B1 (ko) | 2025-09-09 |
| WO2020096384A1 (ko) | 2020-05-14 |
| US11916168B2 (en) | 2024-02-27 |
| CN113056830B (zh) | 2024-08-23 |
| US11271136B2 (en) | 2022-03-08 |
| US20220262982A1 (en) | 2022-08-18 |
| CN210743973U (zh) | 2020-06-12 |
| KR20210074301A (ko) | 2021-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06W | Patent application suspended after preliminary examination (for patents with searches from other patent authorities) chapter 6.23 patent gazette] | ||
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] |