KR102857446B1 - 발광 소자 - Google Patents

발광 소자

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Publication number
KR102857446B1
KR102857446B1 KR1020217011686A KR20217011686A KR102857446B1 KR 102857446 B1 KR102857446 B1 KR 102857446B1 KR 1020217011686 A KR1020217011686 A KR 1020217011686A KR 20217011686 A KR20217011686 A KR 20217011686A KR 102857446 B1 KR102857446 B1 KR 102857446B1
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KR
South Korea
Prior art keywords
light
substrate
light emitting
emitting
blocking film
Prior art date
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Active
Application number
KR1020217011686A
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English (en)
Korean (ko)
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KR20210074301A (ko
Inventor
이정훈
Original Assignee
서울바이오시스 주식회사
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Publication of KR20210074301A publication Critical patent/KR20210074301A/ko
Application granted granted Critical
Publication of KR102857446B1 publication Critical patent/KR102857446B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020217011686A 2018-11-07 2019-11-07 발광 소자 Active KR102857446B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862756935P 2018-11-07 2018-11-07
US62/756,935 2018-11-07
US16/672,676 2019-11-04
US16/672,676 US11271136B2 (en) 2018-11-07 2019-11-04 Light emitting device
PCT/KR2019/015090 WO2020096384A1 (ko) 2018-11-07 2019-11-07 발광 소자

Publications (2)

Publication Number Publication Date
KR20210074301A KR20210074301A (ko) 2021-06-21
KR102857446B1 true KR102857446B1 (ko) 2025-09-09

Family

ID=70458746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217011686A Active KR102857446B1 (ko) 2018-11-07 2019-11-07 발광 소자

Country Status (7)

Country Link
US (3) US11271136B2 (https=)
EP (1) EP3879584A4 (https=)
JP (1) JP7500556B2 (https=)
KR (1) KR102857446B1 (https=)
CN (2) CN210743973U (https=)
BR (1) BR112021008898A2 (https=)
WO (1) WO2020096384A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
US12080687B2 (en) * 2020-10-16 2024-09-03 Seoul Viosys Co., Ltd. Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same
WO2024074702A1 (en) * 2022-10-06 2024-04-11 Ams-Osram International Gmbh Light emitting device
WO2025105266A1 (ja) * 2023-11-15 2025-05-22 日亜化学工業株式会社 発光素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094122A (ja) * 2000-07-13 2002-03-29 Matsushita Electric Works Ltd 光源装置及びその製造方法
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
JP2014527313A (ja) * 2011-09-16 2014-10-09 ソウル バイオシス カンパニー リミテッド 発光ダイオード及びそれを製造する方法
JP2015056650A (ja) * 2013-09-13 2015-03-23 株式会社東芝 発光装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289357A (ja) 2001-03-28 2002-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
KR101087567B1 (ko) 2004-03-23 2011-11-28 엘지디스플레이 주식회사 유기전계발광 소자 및 그 제조방법
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2008251561A (ja) 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
RU2436195C1 (ru) * 2007-12-28 2011-12-10 Нития Корпорейшн Полупроводниковый светоизлучающий прибор и способ его изготовления
KR101769048B1 (ko) 2010-12-22 2017-08-17 엘지이노텍 주식회사 발광 소자, 이를 포함하는 발광소자 패키지 및 조명 장치
EP2442374B1 (en) 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Light emitting device
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
KR20140066397A (ko) * 2012-11-23 2014-06-02 서울바이오시스 주식회사 복수개의 단위 발광소자들을 갖는 발광다이오드
KR102087947B1 (ko) * 2014-07-18 2020-03-11 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
WO2015032678A1 (en) * 2013-09-06 2015-03-12 Teijin Aramid B.V. Separator paper for electrochemical cells
KR20150102179A (ko) 2014-02-27 2015-09-07 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
DE102014106585A1 (de) * 2014-05-09 2015-11-12 Leonhard Kurz Stiftung & Co. Kg Mehrschichtkörper und Verfahren zu dessen Herstellung
US9608168B2 (en) * 2014-06-13 2017-03-28 Seoul Viosys Co., Ltd. Light emitting diode
JP2016046461A (ja) * 2014-08-26 2016-04-04 豊田合成株式会社 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法
JP6852066B2 (ja) * 2015-10-19 2021-03-31 ルミレッズ ホールディング ベーフェー テクスチャ基板を有する波長変換式発光デバイス
TWI588984B (zh) * 2016-03-14 2017-06-21 群創光電股份有限公司 顯示裝置
JP6564348B2 (ja) * 2016-06-06 2019-08-21 日機装株式会社 深紫外発光素子
JP6428730B2 (ja) * 2016-08-24 2018-11-28 日亜化学工業株式会社 発光装置
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
US10340425B2 (en) * 2016-11-25 2019-07-02 Seoul Viosys Co., Ltd. Light emitting diode having light blocking layer
KR102734057B1 (ko) * 2017-02-24 2024-11-26 서울바이오시스 주식회사 광 차단층을 가지는 발광 다이오드
JP7255965B2 (ja) * 2017-08-24 2023-04-11 日機装株式会社 半導体発光素子の製造方法
US11121299B2 (en) * 2018-10-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11482650B2 (en) * 2018-11-07 2022-10-25 Seoul Viosys Co., Ltd. Light emitting device including light shielding layer
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094122A (ja) * 2000-07-13 2002-03-29 Matsushita Electric Works Ltd 光源装置及びその製造方法
JP2014527313A (ja) * 2011-09-16 2014-10-09 ソウル バイオシス カンパニー リミテッド 発光ダイオード及びそれを製造する方法
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
JP2015056650A (ja) * 2013-09-13 2015-03-23 株式会社東芝 発光装置

Also Published As

Publication number Publication date
CN113056830A (zh) 2021-06-29
JP7500556B2 (ja) 2024-06-17
EP3879584A1 (en) 2021-09-15
JP2022506047A (ja) 2022-01-17
BR112021008898A2 (pt) 2021-08-10
EP3879584A4 (en) 2022-08-03
US20240154061A1 (en) 2024-05-09
US20200144448A1 (en) 2020-05-07
WO2020096384A1 (ko) 2020-05-14
US11916168B2 (en) 2024-02-27
CN113056830B (zh) 2024-08-23
US11271136B2 (en) 2022-03-08
US20220262982A1 (en) 2022-08-18
CN210743973U (zh) 2020-06-12
KR20210074301A (ko) 2021-06-21

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