JP2022506047A5 - - Google Patents

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Publication number
JP2022506047A5
JP2022506047A5 JP2021523199A JP2021523199A JP2022506047A5 JP 2022506047 A5 JP2022506047 A5 JP 2022506047A5 JP 2021523199 A JP2021523199 A JP 2021523199A JP 2021523199 A JP2021523199 A JP 2021523199A JP 2022506047 A5 JP2022506047 A5 JP 2022506047A5
Authority
JP
Japan
Prior art keywords
light
substrate
emitting device
emitting
shielding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021523199A
Other languages
English (en)
Japanese (ja)
Other versions
JP7500556B2 (ja
JP2022506047A (ja
Filing date
Publication date
Priority claimed from US16/672,676 external-priority patent/US11271136B2/en
Application filed filed Critical
Publication of JP2022506047A publication Critical patent/JP2022506047A/ja
Publication of JP2022506047A5 publication Critical patent/JP2022506047A5/ja
Application granted granted Critical
Publication of JP7500556B2 publication Critical patent/JP7500556B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021523199A 2018-11-07 2019-11-07 発光ダイオード Active JP7500556B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862756935P 2018-11-07 2018-11-07
US62/756,935 2018-11-07
US16/672,676 2019-11-04
US16/672,676 US11271136B2 (en) 2018-11-07 2019-11-04 Light emitting device
PCT/KR2019/015090 WO2020096384A1 (ko) 2018-11-07 2019-11-07 발광 소자

Publications (3)

Publication Number Publication Date
JP2022506047A JP2022506047A (ja) 2022-01-17
JP2022506047A5 true JP2022506047A5 (https=) 2022-11-11
JP7500556B2 JP7500556B2 (ja) 2024-06-17

Family

ID=70458746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021523199A Active JP7500556B2 (ja) 2018-11-07 2019-11-07 発光ダイオード

Country Status (7)

Country Link
US (3) US11271136B2 (https=)
EP (1) EP3879584A4 (https=)
JP (1) JP7500556B2 (https=)
KR (1) KR102857446B1 (https=)
CN (2) CN210743973U (https=)
BR (1) BR112021008898A2 (https=)
WO (1) WO2020096384A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
US12080687B2 (en) * 2020-10-16 2024-09-03 Seoul Viosys Co., Ltd. Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same
WO2024074702A1 (en) * 2022-10-06 2024-04-11 Ams-Osram International Gmbh Light emitting device
WO2025105266A1 (ja) * 2023-11-15 2025-05-22 日亜化学工業株式会社 発光素子

Family Cites Families (32)

* Cited by examiner, † Cited by third party
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JP4432275B2 (ja) * 2000-07-13 2010-03-17 パナソニック電工株式会社 光源装置
JP2002289357A (ja) 2001-03-28 2002-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル
KR101087567B1 (ko) 2004-03-23 2011-11-28 엘지디스플레이 주식회사 유기전계발광 소자 및 그 제조방법
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2008251561A (ja) 2007-03-29 2008-10-16 Toyoda Gosei Co Ltd 表示装置
RU2436195C1 (ru) * 2007-12-28 2011-12-10 Нития Корпорейшн Полупроводниковый светоизлучающий прибор и способ его изготовления
KR101769048B1 (ko) 2010-12-22 2017-08-17 엘지이노텍 주식회사 발광 소자, 이를 포함하는 발광소자 패키지 및 조명 장치
EP2442374B1 (en) 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Light emitting device
JP5862354B2 (ja) * 2011-04-15 2016-02-16 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
CN106058000B (zh) 2011-09-16 2019-04-23 首尔伟傲世有限公司 发光二极管及制造该发光二极管的方法
KR20140066397A (ko) * 2012-11-23 2014-06-02 서울바이오시스 주식회사 복수개의 단위 발광소자들을 갖는 발광다이오드
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
KR102087947B1 (ko) * 2014-07-18 2020-03-11 엘지이노텍 주식회사 발광 소자 및 그 제조 방법
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JP2015056650A (ja) * 2013-09-13 2015-03-23 株式会社東芝 発光装置
KR20150102179A (ko) 2014-02-27 2015-09-07 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
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US9608168B2 (en) * 2014-06-13 2017-03-28 Seoul Viosys Co., Ltd. Light emitting diode
JP2016046461A (ja) * 2014-08-26 2016-04-04 豊田合成株式会社 半導体発光素子ウエハ及び半導体発光素子並びに半導体発光素子の製造方法
JP6852066B2 (ja) * 2015-10-19 2021-03-31 ルミレッズ ホールディング ベーフェー テクスチャ基板を有する波長変換式発光デバイス
TWI588984B (zh) * 2016-03-14 2017-06-21 群創光電股份有限公司 顯示裝置
JP6564348B2 (ja) * 2016-06-06 2019-08-21 日機装株式会社 深紫外発光素子
JP6428730B2 (ja) * 2016-08-24 2018-11-28 日亜化学工業株式会社 発光装置
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
US10340425B2 (en) * 2016-11-25 2019-07-02 Seoul Viosys Co., Ltd. Light emitting diode having light blocking layer
KR102734057B1 (ko) * 2017-02-24 2024-11-26 서울바이오시스 주식회사 광 차단층을 가지는 발광 다이오드
JP7255965B2 (ja) * 2017-08-24 2023-04-11 日機装株式会社 半導体発光素子の製造方法
US11121299B2 (en) * 2018-10-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11482650B2 (en) * 2018-11-07 2022-10-25 Seoul Viosys Co., Ltd. Light emitting device including light shielding layer
US11271136B2 (en) * 2018-11-07 2022-03-08 Seoul Viosys Co., Ltd Light emitting device

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