WO2020080160A1 - 垂直共振器型発光素子 - Google Patents

垂直共振器型発光素子 Download PDF

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Publication number
WO2020080160A1
WO2020080160A1 PCT/JP2019/039455 JP2019039455W WO2020080160A1 WO 2020080160 A1 WO2020080160 A1 WO 2020080160A1 JP 2019039455 W JP2019039455 W JP 2019039455W WO 2020080160 A1 WO2020080160 A1 WO 2020080160A1
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layer
light emitting
region
semiconductor layer
low resistance
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English (en)
French (fr)
Japanese (ja)
Inventor
大 倉本
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to EP19874482.3A priority Critical patent/EP3869643B1/en
Priority to CN201980068659.1A priority patent/CN112913094B/zh
Priority to US17/285,859 priority patent/US12308614B2/en
Publication of WO2020080160A1 publication Critical patent/WO2020080160A1/ja
Anticipated expiration legal-status Critical
Priority to US19/188,793 priority patent/US20250266663A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
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    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • the present invention relates to a vertical cavity type light emitting device such as a vertical cavity surface emitting laser.
  • a vertical cavity surface emitting laser (hereinafter, simply referred to as a surface emitting laser) has a reflecting mirror formed of a multilayer film laminated on a substrate and emits light along a direction perpendicular to the surface of the substrate. It is a semiconductor laser.
  • Patent Document 1 discloses a surface emitting laser using a nitride semiconductor.
  • the light emitting pattern is stable, for example, the far-field pattern is stable.
  • a resonator capable of generating light in a desired transverse mode is preferably formed in the vertical resonator type light emitting element. For example, by generating a laser beam of a fundamental eigenmode, a far-field image of a single-peaked high-power laser beam having a narrow emission angle can be obtained.
  • the present invention has been made in view of the above points, and an object thereof is to provide a vertical resonator type light emitting device capable of emitting stable transverse mode light.
  • a vertical cavity light emitting device includes a substrate, a first multilayer-film reflective mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer-film reflective mirror and including a light-emitting layer, A second multilayer-film reflective mirror formed on the light-emitting structure layer and forming a resonator between the first multilayer-film reflective mirror and the first multilayer-film reflective mirror.
  • a low resistance region provided in an annular shape between the second multilayer-film reflective mirror and a high resistance region formed inside the low resistance region and having a higher electric resistance than the low resistance region. I am trying.
  • FIG. 3 is a cross-sectional view of the surface emitting laser according to Example 1.
  • FIG. 3 is a schematic top view of the surface emitting laser according to Example 1.
  • FIG. 3 is a diagram schematically showing the configuration of a resonator in the surface emitting laser according to Example 1.
  • 3 is a diagram schematically showing a current path in the surface emitting laser according to Example 1.
  • FIG. 3 is a diagram schematically showing light emitted from the surface emitting laser according to Example 1.
  • FIG. 3 is a diagram showing a relationship between a width of a current injection region and an eigenmode in the surface emitting laser according to Example 1.
  • FIG. 3 is a diagram showing an example of a far-field image of light emitted from the surface emitting laser according to Example 1.
  • FIG. 6 is a diagram showing another example of a far-field image of light emitted from the surface-emitting laser according to Example 1.
  • FIG. 8 is a schematic top view of a surface emitting laser according to Modification 1 of Example 1.
  • FIG. 8 is a schematic top view of a surface emitting laser according to Modification 2 of Example 1.
  • FIG. 8 is a schematic top view of a surface emitting laser according to Modification 3 of Example 1.
  • 5 is a cross-sectional view of a surface emitting laser according to Example 2.
  • FIG. 5 is a cross-sectional view of a surface emitting laser according to Example 3.
  • FIG. FIG. 6 is a cross-sectional view of a surface emitting laser according to Example 4.
  • FIG. 9 is a cross-sectional view of a surface emitting laser according to Example 5.
  • the present invention will be described in detail below. Further, in the following embodiments, the case where the present invention is implemented as a surface emitting laser (semiconductor laser) will be described. However, the present invention is not limited to surface emitting lasers, and can be applied to various vertical cavity light emitting elements such as vertical cavity light emitting diodes.
  • FIG. 1 is a cross-sectional view of a vertical cavity surface emitting laser (VCSEL: Vertical Cavity Surface Emitting Laser, hereinafter referred to as a surface emitting laser) according to the first embodiment.
  • FIG. 2 is a schematic top view of the surface emitting laser 10.
  • FIG. 1 is a sectional view taken along the line VV of FIG. The configuration of the surface emitting laser 10 will be described with reference to FIGS. 1 and 2.
  • the surface emitting laser 10 includes a substrate 11 and a first multilayer-film reflective mirror (hereinafter simply referred to as a first reflective mirror) 12 formed on the substrate 11.
  • the first reflecting mirror 12 is formed on the substrate 11 and has a lower refractive index than the first semiconductor film (hereinafter referred to as a high refractive index semiconductor film) H1 and the high refractive index semiconductor film H1.
  • a second semiconductor film (hereinafter, referred to as a low-refractive index semiconductor film) L1 having a structure.
  • the first reflecting mirror 12 is a semiconductor multilayer film reflecting mirror and constitutes a distributed Bragg reflector (DBR) made of a semiconductor material.
  • DBR distributed Bragg reflector
  • the substrate 11 has a GaN composition.
  • the substrate 11 is a growth substrate used for crystal growth of the first reflecting mirror 12.
  • the high refractive index semiconductor layer H1 in the first reflecting mirror 12 has a composition of GaN
  • the low refractive index semiconductor layer L1 has a composition of AlInN.
  • a buffer layer (not shown) having a GaN composition is provided between the substrate 11 and the first reflecting mirror 12.
  • the surface emitting laser 10 has a light emitting structure layer EM including a light emitting layer 14 formed on the first reflecting mirror 12.
  • the light emitting structure layer EM includes a plurality of semiconductor layers made of a nitride semiconductor.
  • the light emitting structure layer EM includes an n-type semiconductor layer (first semiconductor layer) 13 formed on the first reflecting mirror 12, a light emitting layer (active layer) 14 formed on the n-type semiconductor layer 13, And a p-type semiconductor layer (second semiconductor layer) 15 formed on the light emitting layer 14.
  • the n-type semiconductor layer 13 has a composition of GaN and contains Si as an n-type impurity.
  • the light emitting layer 14 has a quantum well structure including a well layer having a composition of InGaN and a barrier layer having a composition of GaN.
  • the p-type semiconductor layer 15 has a GaN-based composition and contains Mg as a p-type impurity.
  • the configuration of the light emitting structure layer EM is not limited to this.
  • the n-type semiconductor layer 13 may include a plurality of n-type semiconductor layers having different compositions.
  • the p-type semiconductor layer 15 may include a plurality of p-type semiconductor layers having different compositions.
  • the p-type semiconductor layer 15 is, for example, an AlGaN layer as an electron block layer (not shown) that prevents electrons injected into the light-emitting layer 14 from overflowing to the p-type semiconductor layer 15 at the interface with the light-emitting layer 14. May have.
  • the p-type semiconductor layer 15 may have a contact layer (not shown) for forming ohmic contact with the electrode.
  • the p-type semiconductor layer 15 may have a GaN layer as a clad layer between the electron block layer and the contact layer.
  • the p-type semiconductor layer 15 has an upper surface 15A and a convex portion 15B protruding from the upper surface 15A.
  • the convex portion 15B is formed in an annular shape when viewed from a direction perpendicular to the upper surface 15A. Further, in the present embodiment, as shown in FIG. 2, the convex portion 15B is a surface region of the p-type semiconductor layer 15 protruding in an annular shape from the upper surface 15A.
  • the surface emitting laser 10 has an insulating layer (first insulating layer) 16 formed on the upper surface 15A of the p-type semiconductor layer 15 excluding the convex portions 15B.
  • the insulating layer 16 is in contact with the upper surface 15A of the p-type semiconductor layer 15 and the side surface of the convex portion 15B of the p-type semiconductor layer 15.
  • the insulating layer 16 is made of a material that is transparent to the light emitted from the light emitting layer 14 and has a lower refractive index than the p-type semiconductor layer 15 (recess 15B), for example, an oxide such as SiO 2. Become.
  • the insulating layer 16 also has an inner insulating portion 16A formed on a region of the upper surface 15A of the p-type semiconductor layer 15 surrounded by the convex portion 15B.
  • the surface of the p-type semiconductor layer 15 opposite to the light emitting layer 14 is exposed from the insulating layer 16 at the upper end surface of the convex portion 15B.
  • the surface emitting laser 10 has a transparent electrode layer 17 formed on the insulating layer 16 and connected to the p-type semiconductor layer 15 at the convex portion 15B of the p-type semiconductor layer 15.
  • the translucent electrode layer 17 is a conductive film having translucency with respect to the light emitted from the light emitting layer 14.
  • the transparent electrode layer 17 is in contact with the upper surface of the insulating layer 16 and the upper end surface of the convex portion 15B of the p-type semiconductor layer 15.
  • the transparent electrode layer 17 is made of a metal oxide film such as ITO or IZO.
  • the insulating layer 16 functions as a current confinement layer that constricts the current injected into the light emitting structure layer EM via the transparent electrode layer 17.
  • the convex portion 15B of the p-type semiconductor layer 15 is exposed from the insulating layer 16 and comes into contact with the translucent electrode layer 17 (electrode) to function as the low resistance region LR in the light emitting structure layer EM.
  • the region of the p-type semiconductor layer 15 provided with the convex portion 15B functions as a current injection region in which a current is injected into the light emitting layer 14.
  • regions inside and outside the convex portion 15B (regions of the upper surface 15A) in the p-type semiconductor layer 15 are covered with the insulating layer 16 to function as high resistance regions HR having higher electric resistance than the low resistance regions LR. To do. That is, the region where the upper surface 15A of the p-type semiconductor layer 15 is provided functions as a non-current injection region in which the injection of current into the light emitting layer 14 is suppressed.
  • the light emitting structure layer EM is formed in the low resistance region LR provided between the first and second reflecting mirrors 12 and 19 in an annular shape, and inside and outside the low resistance region LR, and the low resistance region LR is formed. And a high resistance region HR having a higher electric resistance than that.
  • the surface emitting laser 10 has an insulating layer (second insulating layer) 18 formed on the transparent electrode layer 17.
  • the insulating layer 18 is made of a metal oxide such as Ta 2 O 5 , Nb 2 O 5 , ZrO 2 , TiO 2 , and HfO 2 .
  • the insulating layer 18 has a light-transmitting property with respect to the light emitted from the light emitting layer 14.
  • the surface emitting laser 10 has a second multilayer-film reflective mirror (hereinafter simply referred to as a second reflective mirror) 19 formed on the insulating layer 18.
  • the second reflecting mirror 19 is arranged at a position facing the first reflecting film 12 via the light emitting structure layer EM.
  • the second reflecting mirror 19 constitutes, together with the first reflecting mirror 12, a resonator OC having a resonator length direction in a direction perpendicular to the light emitting structure layer EM (direction perpendicular to the substrate 11).
  • the second reflecting mirror 19 has a cylindrical shape. Therefore, in the present embodiment, the surface emitting laser 10 has the cylindrical resonator OC.
  • the second reflecting mirror 19 has a second dielectric film (hereinafter referred to as a high refractive index dielectric film) H2 and a second dielectric film H2 having a lower refractive index than the high refractive index dielectric film H2. And a dielectric film L2 (hereinafter referred to as a low refractive index dielectric film) L2 are alternately laminated.
  • a dielectric film L2 hereinafter referred to as a low refractive index dielectric film
  • the second reflecting mirror 19 is a dielectric multilayer film reflecting mirror and constitutes a distributed Bragg reflector (DBR) made of a dielectric material.
  • DBR distributed Bragg reflector
  • the high refractive index dielectric film H2 is a Ta 2 O 5 layer and the low refractive index dielectric film L2 is an Al 2 O 3 layer.
  • the convex portion 15B of the p-type semiconductor layer 15 in the light emitting structure layer EM is provided in a region between the first reflecting mirror 12 and the second reflecting mirror 19. That is, in this embodiment, the resonator OC includes the annular region R2 extending between the first and second reflecting mirrors 12 and 19 corresponding to the low resistance region LR of the light emitting structure layer EM, and the inside of the annular region R2. In, there is a central region R1 provided corresponding to the high resistance region HR, and an outer region R3 provided outside the annular region R2.
  • the insulating layer 16 has a lower refractive index than the p-type semiconductor layer 15. Therefore, the central region R1 and the outer region R3 in the resonator OC have a lower equivalent refractive index than the annular region R2. That is, the central region R1 and the outer region R3 function as a low refractive index region, and the annular region R2 functions as a high refractive index region. Further, in this embodiment, the central region R1 has a cylindrical shape, and each of the annular region R2 and the outer region R3 has a cylindrical shape.
  • the surface emitting laser 10 has first and second electrodes E1 and E2 for applying a current to the light emitting structure layer EM.
  • the first electrode E1 is formed on the n-type semiconductor layer 13.
  • the second electrode E2 is formed on the translucent electrode layer 17.
  • the first reflecting mirror 12 has a slightly lower reflectance than the second reflecting mirror 19. Therefore, a part of the light resonated between the first and second reflecting mirrors 12 and 19 passes through the first reflecting mirror 12 and the substrate 11, and is extracted to the outside. In this way, the surface emitting laser 10 emits light to the substrate 11 and in the direction perpendicular to the light emitting structure layer EM.
  • the convex portion 15B of the p-type semiconductor layer 15 in the light emitting structure layer EM defines the light emission center in the light emitting layer 14 and defines the central axis CA of the resonator OC.
  • the central axis CA of the resonator CA passes through the center of the convex portion 15B of the p-type semiconductor layer 15 and extends along the direction perpendicular to the p-type semiconductor layer 15 (light emitting structure layer EM).
  • the center of the convex portion 15B of the p-type semiconductor layer 15 is arranged at a position corresponding to the center of the inner insulating portion 16A of the insulating layer 16.
  • the first reflecting mirror 12 is composed of 44 pairs of GaN layer and AlInN layer.
  • the n-type semiconductor layer 13 has a layer thickness of 650 nm.
  • the light emitting layer 14 is composed of an active layer having a multiple quantum well structure in which a 4 nm InGaN layer and a 5 nm GaN layer are stacked three times.
  • the second reflecting mirror 19 is composed of 10 pairs of Ta 2 O 5 layer and Al 2 O 3 layer.
  • the p-type semiconductor layer 15 has a layer thickness T1 of 50 nm in the region of the convex portion 15B.
  • the p-type semiconductor layer 15 has a layer thickness of 30 nm in the region of the upper surface 15A.
  • the convex portion 15B has an inner diameter D1 of 3.3 ⁇ m. Further, the convex portion 15B has an outer diameter of 10 ⁇ m.
  • the convex portion 15B has a width W1 of 3.35 ⁇ m.
  • the insulating layer 16 has a layer thickness of 20 nm.
  • the upper surface of the insulating layer 16 is configured to be flush with the upper end surface of the convex portion 15B of the p-type semiconductor layer 15. Note that these are merely examples.
  • FIG. 3 is a diagram schematically showing the optical characteristics of the resonator OC of the surface emitting laser 10.
  • FIG. 3 is a sectional view similar to FIG. 1, but the hatching is omitted.
  • the insulating layer 16 has a lower refractive index than the p-type semiconductor layer 15 and is formed at the same height as the upper end surface of the convex portion 15B of the p-type semiconductor layer 15. Further, the layer thicknesses of the other layers between the first and second reflecting mirrors 12 and 19 are constant.
  • the equivalent refractive index in the resonator OC (the optical distance between the first and second reflecting mirrors 12 and 19, and the resonator length) is equal to the refractive index between the p-type semiconductor layer 15 and the insulating layer 16.
  • the optical distance between the first and second reflecting mirrors 12 and 19 in the annular region R2 is set to the optical distance OL1, and the first and second regions in the central region R1 and the outer region R3.
  • the optical distance OL2 is smaller than the optical distance OL1. That is, the equivalent resonator length in the central region R1 and the outer region R3 is smaller than the equivalent resonator length in the annular region R2.
  • FIG. 4 is a diagram schematically showing electrical characteristics in the cavity OC (in the light emitting structure layer EM) of the surface emitting laser 10.
  • FIG. 4 is a diagram schematically showing the current CR flowing in the light emitting structure layer EM.
  • FIG. 4 is a sectional view similar to FIG. 1, but the hatching is omitted.
  • the annular region R2 which is the region of the convex portion 15B, functions as the low resistance region LR, and the other regions, the central region R1 and the outer region R3, function as the high resistance region HR.
  • the current CR is injected into the light emitting layer 14 only in the annular region R2, and almost no current is injected into the light emitting layer 14 in the central region R1. That is, while light is generated (gain is generated) in the annular region R2, no light is generated in the central region R1.
  • FIG. 5 is a diagram schematically showing light emitted from the surface emitting laser 10.
  • the standing wave in the surface emitting laser 10 is taken out from the first reflecting mirror 12.
  • the light resonated in the surface emitting laser 10 is extracted to the outside while being converged in the central region R1 as shown in FIG.
  • the beam outer edge of the laser light LB emitted from the surface emitting laser 10 is schematically shown by a broken line.
  • the refractive index of the insulating layer 16 is smaller than the refractive index of the p-type semiconductor layer 15 (projection 15B). Therefore, a difference in equivalent refractive index is provided between the regions R1 to R3 in the resonator OC.
  • the equivalent refractive index of the resonator OC (laser medium) in the outer region R3 is smaller than the equivalent refractive index of the resonator OC in the annular region R2.
  • the optical loss due to the standing wave in the resonator OC diverging (radiating) from the annular region R2 to the outside is suppressed. That is, a large amount of light stays inside the annular region R2, and in that state, the laser light LB is extracted to the outside. Therefore, a large amount of light is concentrated on the annular region R2 of the resonator OC, and the high-power laser light LB can be generated and emitted.
  • the optical confinement structure in the resonator OC is formed by providing the difference in the equivalent refractive index. Therefore, almost all the light becomes the laser light LB without a decrease in intensity. Therefore, it is possible to generate and emit the laser light LB with high efficiency and high output.
  • the low resistance region LR that is, the current injection region for the light emitting layer 14 is limited to the annular region R2. That is, no current is injected into the central region R1, and the current injection region is provided so as to surround this non-current injection region. Thereby, the eigenmode of the laser light LB can be stabilized.
  • the wavelength of the light emitted from the light emitting layer 14 mainly by adjusting the width W1 of the low resistance region LR (see FIG. 2), that is, the current injection width, a stable eigenmode The laser light LB can be emitted. Thereby, a stable and high-intensity far-field image can be obtained.
  • FIG. 6A is a diagram showing a relationship between the current injection width W1 and the eigenmode (also referred to as a super mode) of the laser light LB.
  • the horizontal axis of FIG. 6A represents the width W1 of the low resistance region LR (that is, the convex portion 15B), and the vertical axis represents the number of eigenmodes of the laser light LB. Note that FIG. 6A shows a change in the eigenmode of the laser beam LB with respect to the width W1.
  • FIG. 6A when the current injection width W1 is 2.3 ⁇ m or less, the eighth eigenmode appears. In other words, there are eight beam spots in the annular region R2, and a mode in which the phase is inverted between the adjacent spots appears (becomes an out-of-phase mode). Therefore, in the far-field image, the multimodal laser light LB is observed.
  • FIG. 6B is a diagram showing a far-field pattern of the laser beam LB when the current injection width W1 is less than 2.3 ⁇ m.
  • FIG. 6C is a diagram showing a far-field pattern of the laser beam LB when the current injection width W1 is larger than 2.85 ⁇ m.
  • the inventor of the present application has found that the eigenmode changes between the in-phase mode and the out-of-phase mode depending on the value of the applied current when the current injection width W1 is in the range of 2.3 to 2.85 ⁇ m. I'm confirming.
  • the low resistance regions LR in a ring shape and adjusting the width W1 thereof, it is possible to generate a stable eigenmode laser beam LB and form a stable far-field image.
  • the stable transverse mode laser light LB it is sufficient that the annular low resistance region LR and the high resistance region HR inside thereof are provided in the resonator OC.
  • the current injection width W1 can be adjusted mainly according to the wavelength of the laser light LB (that is, the light emitted from the light emitting layer 14) and the equivalent refractive index of the resonator OC.
  • the width W1 may be set so as to satisfy the relationship of W1 ⁇ 2.85 ⁇ ( ⁇ / 0.445) [ ⁇ m].
  • the eigenmode of the laser light LB can be made more stable.
  • the wavelength of the light emitted from the light emitting layer 14 is set to a wavelength ⁇
  • the equivalent refractive index of the annular region R2 for the wavelength ⁇ is set to a refractive index n ⁇
  • the equivalent refractive index of the annular region R2 to a wavelength of 445 nm is set to a refractive index n 445.
  • the width W1 of the current injection region CJ is W1 ⁇ 2.85 ⁇ ( ⁇ / 0.445) ⁇ (n ⁇ / n 445 ) [ ⁇ m] It may be set so as to satisfy the relationship.
  • the inventor of the present application has confirmed that the current injection width W1 is preferably 5.5 ⁇ m or less in order to obtain a stable single eigenmode laser beam LB. This is because when the width W1 is larger than 5.5 ⁇ m, the multimode laser light LB may be emitted when the width exceeds the laser oscillation threshold. That is, considering that the laser light LB having a single peak is obtained when the wavelength ⁇ is 445 nm, the width W1 may satisfy the relationship of 2.85 ⁇ W1 ⁇ 5.5 [ ⁇ m]. Further, this range may be adjusted according to the emission wavelength ⁇ and the equivalent refractive index of the annular region R2.
  • the inner diameter D1 of the low resistance region LR can be set in a preferable range in consideration of the diffusion length of carriers (electrons or holes) in the light emitting layer 14.
  • the diffusion length of carriers in the light emitting layer 14 corresponds to, for example, a distance in which the carriers move in a direction parallel to the light emitting layer 14 (lateral direction).
  • the low resistance region LR should have an inner diameter D1 that is at least twice the diffusion length of carriers (electrons in this embodiment) in the light emitting layer 14 when viewed from the direction perpendicular to the light emitting layer 14.
  • a region where no current is injected is formed in at least a part of the region of the light emitting layer 14 inside the annular region R2. Therefore, the low resistance region LR preferably has an inner diameter D1 that is at least twice the diffusion length of carriers in the light emitting layer 14 when viewed from the direction perpendicular to the light emitting layer 14. That is, the width of the high resistance region HR inside the low resistance region LR is preferably at least twice the diffusion length of carriers in the light emitting layer 14.
  • the layer thickness T1 of the p-type semiconductor layer 15 (in this embodiment, the distance from the upper end surface of the convex portion 15B to the interface with the light emitting layer 14, see FIG. 1), It can be set in a preferable range in consideration of carrier diffusion length.
  • the layer thickness T1 of the p-type semiconductor layer 15 is preferably not more than twice the diffusion length of carriers in the light emitting layer 14. As a result, the region of the light emitting layer 14 where carriers (electrons) do not reach can be formed inside the annular region R2.
  • the annular region R2 is a low resistance region LR and a high refractive index region. Therefore, not only most of the injected current can be used for generating the laser light LB, but also the loss of the laser light LB in the central region R1 or the outer region R3 due to the refractive index difference is significantly suppressed. Therefore, the stable and high-power transverse mode laser light LB can be generated with a low threshold and high efficiency. Further, since no current is passed through the central region R1, heat generation in the central region R1 can be suppressed and operation at high temperature becomes possible.
  • the annular region R2 is a high refractive index region and the central region R1 and the outer region R3 are low refractive index regions. That is, the case has been described where the boundary between the low resistance region LR and the high resistance region HR is provided at a position that coincides with the boundary between the high refractive index region and the low refractive index region.
  • the configurations of the central region R1, the annular region R2, and the outer region R3 are not limited to this.
  • the annular low resistance region LR and the high resistance region HR inside the low resistance region LR are provided between the first and second reflecting mirrors 12 and 19. If you have.
  • the boundary between the high refractive index region and the low refractive index region may be provided at a position different from the boundary between the central region R1 and the annular region R2.
  • the case where the p-type semiconductor layer 15 has the convex portion 15B and the convex portion 15B comes into contact with the transparent electrode layer 17 to function as the low resistance region LR has been described.
  • the light emitting structure layer EM has the annular low resistance region LR.
  • the n-type semiconductor layer 13 may have a protrusion similar to the protrusion 15B. That is, the low resistance region LR and the high resistance region HR may be provided in the n-type semiconductor layer 13.
  • the low resistance region LR that is, the convex portion 15B of the p-type semiconductor layer 15 is formed in an annular shape.
  • the structure of the low resistance region LR is not limited to this.
  • FIG. 7A is a schematic top view of a surface emitting laser 10A according to a first modification of the present embodiment.
  • the surface-emitting laser 10A has the same structure as the surface-emitting laser 10 except for the structure of the light emitting structure layer EMA.
  • the light emitting structure layer EMA has the same structure as the light emitting structure layer EM except for the structure of the p-type semiconductor layer 15M1.
  • the p-type semiconductor layer 15M1 has an elliptic ring-shaped (track-shaped) convex portion 15B1. That is, in this modification, an elliptical annular region R2 (low resistance region LR and high refractive index region) is formed. Even if the annular region R2 is formed in this way, the eigenmode of the laser light LB is stabilized by adjusting the width of the convex portion 15B1, for example. Therefore, for example, a far-field image of the single-peaked laser beam LB can be obtained. Further, it is possible to obtain the laser beam LB having a low emission angle and high intensity.
  • FIG. 7B is a schematic top view of a surface emitting laser 10B according to Modification 2 of the present embodiment.
  • the surface emitting laser 10B has the same configuration as the surface emitting laser 10 except for the configuration of the light emitting structure layer EMB.
  • the light emitting structure layer EMB has the same structure as the light emitting structure layer EM except for the structure of the p-type semiconductor layer 15M2.
  • the p-type semiconductor layer 15M2 has a rectangular annular convex portion 15B2. That is, in this modification, the rectangular annular region R2 (the low resistance region LR and the high refractive index region) is formed. Even if the annular region R2 is formed in this way, the eigenmode of the laser light LB is stabilized by adjusting the width of the convex portion 15B2, for example. Therefore, for example, it is possible to obtain a far-field image of the laser beam LB which is unimodal and has a low emission angle and high intensity.
  • FIG. 7C is a schematic top view of a surface emitting laser 10C according to Modification 3 of the present embodiment.
  • the surface emitting laser 10C has the same configuration as the surface emitting laser 10 except for the configuration of the light emitting structure layer EMC.
  • the light emitting structure layer EMC has the same structure as the light emitting structure layer EM except for the structure of the p-type semiconductor layer 15M3.
  • the p-type semiconductor layer 15M3 has an annular convex portion 15B3 surrounding a cross. That is, in this modified example, the annular region R2 (the low resistance region LR and the high refractive index region) that surrounds the cross is formed. Even if the annular region R2 is formed in this way, the eigenmode of the laser light LB is stabilized by adjusting the width of the convex portion 15B3, for example. Therefore, for example, it is possible to obtain a far-field image of the laser beam LB which is unimodal and has a low emission angle and high intensity.
  • the eigenmode of the light generated in the annular region R2 is stabilized.
  • a single eigenmode laser beam LB see, for example, FIG. 6C
  • a laser beam LB as an aggregate of a plurality of eigenmode lights see, eg, FIG. 6B
  • the low resistance region LR can have various configurations, for example, as shown in FIGS. 7A to 7C.
  • the low resistance region LR is formed in the light emitting structure layer EM by the p-type semiconductor layer 15 and the insulating layer 16 .
  • the structure of the low resistance region LR is not limited to this.
  • the low resistance region LR may be formed by leaving the annular region and increasing the resistance of other regions.
  • the surface emitting laser 10 includes the substrate 11, the first reflecting mirror 12 formed on the substrate 11, the first reflecting mirror 12 formed on the first reflecting mirror 12, and the light emitting layer 14. And a second reflecting mirror 19 formed on the light emitting structure layer EM and forming a resonator OC with the first reflecting mirror 12. Further, the light emitting structure layer EM is provided inside the low resistance region LR formed in a ring shape between the first and second reflecting mirrors 12 and 19, and has a higher electrical conductivity than the low resistance region LR. And a high resistance region HR having resistance. Therefore, it is possible to provide the surface emitting laser 10 capable of emitting stable transverse mode light.
  • FIG. 8 is a cross-sectional view of the surface emitting laser 20 according to the second embodiment.
  • the surface emitting laser 20 has the same configuration as the surface emitting laser 10 except for the configurations of the light emitting structure layer EM1 and the low resistance region LR.
  • the light emitting structure layer EM1 has a p-type semiconductor layer (second semiconductor layer) 21 having an ion-implanted region 21A in which ions are implanted leaving a ring-shaped region.
  • the ion implantation region 21A is a region on the upper surface of the p-type semiconductor layer 21 into which B ions, Al ions, or oxygen ions are implanted.
  • the p-type impurities are inactivated in the ion implantation region 21A. That is, the ion implantation region 21A functions as the high resistance region HR. Further, in the ion implantation region 21A, the refractive index changes due to the implantation of ions.
  • the region 21B of the p-type semiconductor layer 21 other than the ion-implanted region 21A is a non-ion-implanted region in which ion implantation is not performed and is formed in a ring shape. Therefore, in this embodiment, the non-ion-implanted region 21B functions as the low resistance region LR and constitutes the annular region R2.
  • the low resistance region LR can be provided in the light emitting structure layer EM. Therefore, it is possible to provide the surface emitting laser 20 capable of stably emitting light in the transverse mode.
  • FIG. 9 is a cross-sectional view of the surface emitting laser 30 according to the third embodiment.
  • the surface emitting laser 30 is formed between the light emitting structure layer EM1 and the second reflecting mirror 19 except that it has an insulating layer (second insulating layer) 31 having a different refractive index between regions. It has the same configuration as the surface emitting laser 20.
  • the insulating layer 31 is formed on the translucent electrode layer 17 and has a high refractive index insulating layer 32 having a convex portion 32A on the non-ion implantation region 21B and a high refractive index insulating layer 32 while exposing the convex portion 32A.
  • a low refractive index insulating layer 33 formed on the refractive index insulating layer 32 and having a refractive index lower than that of the high refractive index insulating layer 32.
  • the high resistance insulating layer 32 is made of, for example, Nb 2 O 5 .
  • the low refractive index insulating layer 33 is made of, for example, SiO 2 .
  • the refractive index difference between the central region R1, the annular region R2 and the outer region R3 is provided by the insulating layer 31 formed outside the light emitting structure layer EM1. Accordingly, for example, the low resistance region LR and the high resistance region HR can be preferentially and reliably defined by the light emitting structure layer EM1, and the low refractive index region and the high refractive index region can be defined and reinforced by the insulating layer 31. Therefore, it is possible to provide the surface emitting laser 30 capable of stably emitting light in the transverse mode.
  • FIG. 10 is a sectional view of the surface emitting laser 40 according to the fourth embodiment.
  • the surface emitting laser 40 has the same configuration as the surface emitting laser 10 except for the configurations of the light emitting structure layer EM2 and the low resistance region LR.
  • the light emitting structure layer EM2 has a p-type semiconductor layer 41 having an etching portion 41A which is dry-etched while leaving an annular region.
  • the surface of the semiconductor containing impurities such as the p-type semiconductor layer 41 is roughened by dry etching. As a result, the p-type impurities in the etched portion 41A are inactivated. That is, the p-type semiconductor layer 41 has the inactivated region 41C in which the p-type impurity is inactivated in the region of the etched portion 41A. Therefore, the passivation region 41C functions as the high resistance region HR.
  • the p-type semiconductor layer 41 is partially removed in the etching section 41A. Therefore, the area other than the etching portion 41A becomes the convex portion 41B protruding from the etching portion 41A. Further, in the etching portion 41A, the contact layer generally provided at the interface with the metal in the semiconductor layer is removed. Therefore, even if the insulating layer 16 is not provided as in the first embodiment, the etching portion 41A has a sufficiently high resistance.
  • the current is injected into the light emitting structure layer EM2 only from the convex portion 41B.
  • the layer thickness of the p-type semiconductor layer 41 is different between the etched portion 41A and the convex portion 41B. Therefore, a difference can be provided in the equivalent refractive index of the resonator OC, that is, the optical distance in the resonator OC.
  • the p-type semiconductor layer 41 selectively has the passivation region 41C. Therefore, the p-type semiconductor layer 41 is not limited to the case where the dry etching is performed on the p-type semiconductor layer 41A.
  • the passivation region 41C may be formed by performing ion implantation, or the passivation region 41C may be formed by performing ashing treatment.
  • the p-type semiconductor layer (second semiconductor layer) 41 of the light emitting structure layer EM2 has the passivation region 41C in which the p-type impurity is inactivated, leaving the annular region.
  • the region 41B in which the impurities of the p-type semiconductor layer 41 are not inactivated functions as the low resistance region LR.
  • the low resistance region LR can be provided in the light emitting structure layer EM. Therefore, it is possible to provide the surface-emitting laser 40 capable of emitting stable transverse mode light.
  • FIG. 11 is a sectional view of a surface emitting laser 50 according to the fifth embodiment.
  • the surface emitting laser 50 has the same configuration as the surface emitting laser 10 except for the configurations of the light emitting structure layer EM3 and the low resistance region LR.
  • the light emitting structure layer EM3 includes the tunnel junction layer 51 provided in an annular shape on the convex portion 15B of the p type semiconductor layer 15 and the n type semiconductor layer (first layer) provided on the tunnel junction layer 51. 2 n-type semiconductor layer or third semiconductor layer) 52.
  • the light emitting structure layer EM3 surrounds the side surfaces of the tunnel junction layer 51 and the n-type semiconductor layer 52, and has an index of refraction lower than that of the tunnel junction layer 51 and the n-type semiconductor layer 52 (third n-type semiconductor layer).
  • Semiconductor layer or fourth semiconductor layer) 53 is provided in an annular shape on the convex portion 15B of the p type semiconductor layer 15 and the n type semiconductor layer (first layer) provided on the tunnel junction layer 51. 2 n-type semiconductor layer or third semiconductor layer) 52.
  • the light emitting structure layer EM3 surrounds the side surfaces of the tunnel junction layer 51 and the n-type semiconductor layer 52, and has an index of refraction lower than that of the tunnel junction layer
  • the tunnel junction layer 51 is formed on the p-type semiconductor layer 15 and has a high-doped p-type semiconductor layer (not shown) having a higher impurity concentration than the p-type semiconductor layer (second semiconductor layer) 15 and the high-doped p-type semiconductor layer.
  • the n-type semiconductor layer 53 contains Ge as an n-type impurity.
  • the n-type semiconductor layer 53 has a refractive index lower than the average refractive index of the n-type semiconductor layer 52, the tunnel junction layer 51, and the convex portion 15B of the p-type semiconductor layer 15.
  • the tunnel junction layer 51 functions as the resistance region LR.
  • the light emitting structure layer EM3 has the tunnel junction layer 51 which is formed in an annular shape on the p-type semiconductor layer 15 (second semiconductor layer) and functions as the low resistance region LR.
  • the n-type semiconductor layer 53 defines the central region R1 and the outer region R3.
  • the low resistance region LR can also be formed in the light emitting structure layer EM3 by performing current confinement by a tunnel junction and providing the region in a ring shape as in the present embodiment. Further, the central region R1, the annular region R2, and the outer region R3 can be defined by lowering the refractive index of the regions other than the low resistance region LR. Therefore, it is possible to provide the surface emitting laser 50 capable of stably emitting light in the transverse mode.
  • the surface emitting laser 10 may have the same insulating layer 31 as the surface emitting laser 30.
  • the surface emitting laser 40 may have the insulating layer 16 on the passivation region 41C.
  • the surface emitting laser 10 has the low resistance region (current injection region CJ) in which the light emitting structure layer EM is annularly provided between the first and second reflecting mirrors 12 and 19.
  • the surface emitting laser 10 vertical cavity type light emitting element

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