JP4479804B2 - 面発光型半導体レーザ - Google Patents
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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Description
キャリア拡散層により横方向へのキャリア拡散を促進し、活性層に流れ込む電流の均一性を改善している。
104:バッファ層 106:下部DBR
108:活性領域 110:電流狭窄層
110a:酸化領域 110b:導電領域
112:上部DBR 112A:高濃度DBR
112B:DBR 114:コンタクト層
116:溝 120:層間絶縁膜
130:上部電極 134:電極パッド
136:配線電極 150:n側下部電極
P:ポスト(メサ)
Claims (12)
- 基板と、
前記基板上に形成された第1導電型の第1の半導体多層膜反射鏡と、
前記第1の半導体多層膜反射鏡上に形成された活性領域と、
前記活性領域上に形成された第2導電型の電流狭窄層と、
前記電流狭窄層上に形成された第2導電型の第2の半導体多層膜反射鏡と、
前記第2の半導体多層膜反射鏡上に形成された第2導電型の第3の半導体多層膜反射鏡とを有し、
前記第1、第2および第3の半導体多層膜反射鏡は、高屈折率層と低屈折率層との対をそれぞれ含んでおり、
前記第2の半導体多層膜反射鏡の不純物濃度は、前記第3の半導体多層膜反射鏡の不純物濃度よりも高く、
前記第2の半導体多層膜反射鏡の高屈折率層のバンドギャップエネルギーは、前記第1の半導体多層膜反射鏡、前記活性領域、前記電流狭窄層、前記第2の半導体多層膜反射鏡および前記第3の半導体多層膜反射鏡から形成される共振器の波長のエネルギーよりも大きく、
前記第2の半導体多層膜反射鏡の対は、1周期以上3周期以下である、
面発光型半導体レーザ。 - 前記高屈折率層は、相対的にAl組成の低い半導体層であり、前記低屈折率層は、相対的にAl組成の高い半導体層であり、前記第2の半導体多層膜反射鏡の相対的にAl組成の低い半導体層のAl組成は、前記共振器の波長のエネルギーよりも大きい、請求項1に記載の面発光型半導体レーザ。
- 前記第1の半導体多層膜反射鏡は、Alx1Ga1-x1As半導体層とAly1Ga1-y1As半導体層(X1>Y1、0<X1<1、0<Y1<1)の対を含み、前記第2の半導体多層膜反射鏡は、Alx2Ga1-x2As半導体層とAly2Ga1-y2As半導体層(X2>Y2、0<X2<1、0<Y2<1)の対を含み、前記第3の半導体多層膜反射鏡は、Alx3Ga1-x3As半導体層とAly3Ga1-y3As半導体層(X3>Y3、0<X3<1、0<Y3<1)の対を含み、Y2>Y1であり、かつY2>Y3である、請求項1に記載の面発光型半導体レーザ。
- 前記第2の半導体多層膜反射鏡の高屈折率層のバンドギャップエネルギーは、前記共振器波長のエネルギーよりも大きく、両者のエネルギーの差分は、0.1eV以上0.3eV以下である、請求項1ないし3いずれか1つに記載の面発光型半導体レーザ。
- 面発光型半導体レーザはさらに、前記第3の半導体多層膜反射鏡から少なくとも前記活性領域に至るメサを含み、前記電流狭窄層は、前記メサ側面から一部が酸化された酸化領域を含む、請求項1ないし4いずれか1つに記載の面発光型半導体レーザ。
- 基板と、
前記基板上に形成された第1導電型の第1の半導体多層膜反射鏡と、
前記第1の半導体多層膜反射鏡上に形成された活性領域と、
前記活性領域上に形成された第2導電型の電流狭窄層と、
前記電流狭窄層上に形成された第2導電型の第2の半導体多層膜反射鏡と、
前記第2の半導体多層膜反射鏡上に形成された第2導電型の第3の半導体多層膜反射鏡とを有し、
前記第1、第2、および第3の半導体多層膜反射鏡は、Alx1Ga1-x1As半導体層とAly1Ga1-y1As半導体層(X1>Y1)の対、Alx2Ga1-x2As半導体層とAly2Ga1-y2As半導体層(X2>Y2)の対、Alx3Ga1-x3As半導体層とAly3Ga1-y3As半導体層(X3>Y3)の対をそれぞれ含んでおり、
前記第2の半導体多層膜反射鏡のAl組成Y2は、前記第1の半導体多層膜反射鏡のAl組成Y1よりも高く、かつ前記第3の半導体多層膜反射鏡のAl組成Y3よりも高く、
前記第2の半導体多層膜反射鏡のAly2Ga1-y2As半導体層のバンドギャップエネルギーは、前記第1の半導体多層膜反射鏡、前記活性領域、前記電流狭窄層、前記第2の半導体多層膜反射鏡および前記第3の半導体多層膜反射鏡から形成される共振器の波長のエネルギーよりも大きく、
前記第2の半導体多層膜反射鏡の不純物濃度は、前記第3の半導体多層膜反射鏡の不純物濃度よりも高く、
前記第2の半導体多層膜反射鏡の対は、1周期以上3周期以下である、
面発光型半導体レーザ。 - 前記第2の半導体多層膜反射鏡のAly2Ga1-y2As半導体層のバンドギャップエネルギーは、前記共振器波長のエネルギーよりも大きく、両者のエネルギーの差分は、0.1eV以上0.3eV以下である、請求項6に記載の面発光型半導体レーザ。
- 請求項1ないし7いずれか1つに記載の面発光型半導体レーザと光学部材を実装したモジュール。
- 請求項8に記載されたモジュールと、モジュールから発せられたレーザ光を光媒体を介して送信する送信手段とを備えた、光送信装置。
- 請求項8に記載されたモジュールと、モジュールから発せられた光を空間伝送する伝送手段とを備えた、光空間伝送装置。
- 請求項8に記載されたモジュールと、モジュールから発せられたレーザ光を送信する送信手段とを備えた、光送信システム。
- 請求項8に記載されたモジュールと、モジュールから発せられた光を空間伝送する伝送手段とを備えた、光空間伝送システム。
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JP2008032251A JP4479804B2 (ja) | 2008-02-13 | 2008-02-13 | 面発光型半導体レーザ |
US12/330,118 US7751459B2 (en) | 2008-02-13 | 2008-12-08 | Vertical-cavity surface-emitting laser, module, optical transmission device, free space optical communication device, optical transmission system, and free space optical communication system |
KR1020090009558A KR20090087817A (ko) | 2008-02-13 | 2009-02-06 | 면 발광형 반도체 레이저 |
CN2009100064074A CN101510665B (zh) | 2008-02-13 | 2009-02-12 | 激光器、模块、光传输装置和系统、光通信装置和系统 |
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JP2011228576A (ja) * | 2010-04-22 | 2011-11-10 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
KR101433361B1 (ko) * | 2011-05-26 | 2014-08-22 | 주식회사 레이칸 | 편광조절 표면방출 레이저 소자 |
JP2014103233A (ja) * | 2012-11-20 | 2014-06-05 | Ricoh Co Ltd | 面発光レーザ素子、光走査装置、画像形成装置、及び面発光レーザ素子の製造方法、 |
JPWO2018003335A1 (ja) * | 2016-06-30 | 2019-04-25 | パナソニックIpマネジメント株式会社 | 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム |
JP2018157065A (ja) * | 2017-03-17 | 2018-10-04 | 住友電気工業株式会社 | 面発光半導体レーザ |
DE112019001141T5 (de) * | 2018-03-06 | 2020-11-26 | Sony Corporation | Lichtemittierendes element |
KR102515674B1 (ko) * | 2018-04-04 | 2023-03-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면 광방출 레이저 소자 및 이를 포함하는 발광장치 |
US11942762B2 (en) | 2018-04-04 | 2024-03-26 | Suzhou Lekin Semiconductor Co., Ltd. | Surface-emitting laser device and light emitting device including the same |
KR102430961B1 (ko) * | 2018-06-29 | 2022-08-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면발광 레이저소자 및 이를 포함하는 발광장치 |
CN108680929B (zh) * | 2018-07-18 | 2024-05-31 | 度亘激光技术(苏州)有限公司 | 一种基于垂直腔面发射激光器阵列的三维感测系统 |
CN109462143A (zh) * | 2018-09-30 | 2019-03-12 | 中科芯电半导体科技(北京)有限公司 | 一种应用于vcsel中的dbr生长方法、分布式布拉格反射镜和垂直腔面发射激光器 |
KR101997787B1 (ko) * | 2018-10-05 | 2019-07-08 | 주식회사 포셈 | 수직공진표면발광레이저의 제조방법 |
JP7166871B2 (ja) * | 2018-10-18 | 2022-11-08 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
JP7190865B2 (ja) * | 2018-10-18 | 2022-12-16 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
CN109038217B (zh) * | 2018-10-31 | 2024-04-26 | 厦门乾照半导体科技有限公司 | 延长使用寿命的vcsel芯片及制作方法和电子器件 |
CN109728502B (zh) * | 2019-01-08 | 2020-07-31 | 扬州乾照光电有限公司 | 垂直腔面发射激光器外延结构及其制备方法 |
CN114511489B (zh) * | 2020-10-23 | 2024-05-28 | 浙江睿熙科技有限公司 | Vcsel芯片的束散角检测方法、系统和电子设备 |
CN114552380A (zh) * | 2020-11-25 | 2022-05-27 | 上海禾赛科技有限公司 | 谐振腔、激光单元及芯片和激光器及形成方法、激光雷达 |
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JP4943052B2 (ja) * | 2006-04-27 | 2012-05-30 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム |
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