WO2020059897A1 - 레이저 화학기상증착을 이용한 미세 배선 형성 방법 - Google Patents
레이저 화학기상증착을 이용한 미세 배선 형성 방법 Download PDFInfo
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- WO2020059897A1 WO2020059897A1 PCT/KR2018/010962 KR2018010962W WO2020059897A1 WO 2020059897 A1 WO2020059897 A1 WO 2020059897A1 KR 2018010962 W KR2018010962 W KR 2018010962W WO 2020059897 A1 WO2020059897 A1 WO 2020059897A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
Definitions
- Embodiments of the present invention relates to a method for forming a fine wiring, and more particularly, to a method for forming a fine wiring by laser chemical vapor deposition (LCVD).
- LCD laser chemical vapor deposition
- a laser chemical vapor deposition (LCVD) method of forming a fine pattern using a laser may be exemplified.
- LCVD is a method of directly patterning wiring patterns using a single metal material while irradiating laser light on a corresponding portion of a substrate and depositing intensively at that portion when performing chemical vapor deposition.
- This conventional method is configured to supply a source gas containing any one metal element selected from tungsten, molybdenum, copper, aluminum, etc. to a portion where the wiring pattern is to be formed in order to form the wiring pattern.
- the thickness, width, shape, and film quality of the wiring pattern formed in the LCVD process may vary depending on the degree of vacuum, source gas pressure, laser output and laser beam shape, size, irradiation time, and temperature conditions in the LCVD process forming the wiring. This is well known through research and experiments on existing LCVDs.
- LCVD has been mainly used as a means of repairing defective portions of a wiring pattern, but it is possible to fully think of forming a direct patterning wiring by speeding up and multiplexing.
- the film quality in the metal film forming the wiring pattern is uneven, cracks or voids are often generated, and viewed from a cross section perpendicular to the wiring formation direction.
- the middle portion has a recessed shape, and there are problems such as a limited thickness growth rate and a growth rate depending on the width of the wiring.
- the present invention is to solve and alleviate the problems in the method of forming a fine wiring using a conventional laser chemical vapor deposition (laser chemical vapor deposition, LCVD), to secure the required conductivity by thickly growing a narrow metal wiring pattern in a short time It is an object to provide a method for forming a fine wiring that can be performed.
- LCVD laser chemical vapor deposition
- Another object of the present invention is to provide a method for forming a fine wiring capable of improving conductivity by healing and alleviating defects affecting conductivity in the film quality of the metal wiring primarily formed through LCVD.
- Another object of the present invention is to provide a method for forming a fine wire that can finally reduce the wire width during deposition formation to 2.0 ⁇ m or less through a subsequent process when forming a metal wire pattern by a direct patterning method.
- a method of forming a fine wiring provides a plurality of metal elements to a substrate while supplying a source gas containing a plurality of metal elements through laser chemical vapor deposition (LCVD). And forming a metal wiring (hereinafter referred to as an alloy wiring) containing the same, and performing a laser heat treatment on the region including the metal wiring.
- a source gas containing a plurality of metal elements through laser chemical vapor deposition (LCVD).
- the metal wiring formed by deposition may mainly include tungsten (W) and molybdenum (Mo), for example, a total content of 80 wt% or more.
- the deposited metal wiring may have a weight ratio of tungsten: molybdenum of 20:80 to 80:20, and preferably 50:50.
- metals with low specific resistance such as silver (Ag), gold (Au), and aluminum (Al) may be used in addition to tungsten (W) and molybdenum (Mo), and platinum (Pt) is used in the wiring. It may contain from 3% to 5% by weight.
- the step of performing the laser heat treatment may be selectively or intensively heated to a depth of 1 ⁇ m from the surface of the wiring and then cooled. In this heat treatment step, it may be heated to a temperature atmosphere of 500 ° C to 650 ° C.
- fine wiring formation and laser heat treatment by LCVD may be performed while changing the laser properties without moving the process space in the same place.
- the method for forming a fine wire may further include a zapping step for repairing defects before the LCVD alloy wire forming step.
- the repair of the zapping step is performed by laser light, and the laser chemical vapor deposition apparatus and the optical system and observation device coupled to the laser chemical vapor deposition apparatus are used in the LCVD alloy wiring forming step and the laser processing step.
- the repair process may be observed in real time and automatically performed by a control device coupled to the laser chemical vapor deposition device.
- the pattern width is aggregated in the process of partial melting and cooling by adjusting the irradiation width and the output intensity in the secondary laser heat treatment step, so that the line width of the fine wiring is smaller than 2.3 ⁇ m, more preferably less than 2.0 ⁇ m.
- 1 to 3 are two directions showing the composition ratio of the wiring film quality and the peripheral film quality by laser heat treatment, the step coverage, and the size of the composition ratio of the alloy wiring or the wiring including a plurality of metals in one embodiment according to the fine wiring formation method seen from above. It is a photograph of a focused ion beam scanning electron microscope (FIB SEM) showing a cross section in.
- FIB SEM focused ion beam scanning electron microscope
- 4 to 6 are cross-sections in two directions showing the component ratio in the tungsten single metal microwiring for comparison with the present invention, the wiring film quality by laser heat treatment, and the shape, step coverage and size of the surrounding film quality covering the wiring. This is a focused ion beam scanning electron microscope photograph.
- FIG. 7 is a view showing a comparison of the cross-sectional pictures of the alloy wire and the single metal wire before and after laser heat treatment, respectively.
- FIG 8 is an exemplary photo showing a state before and after heat treatment of an alloy wiring according to an embodiment of the present invention.
- 10 is a diagram schematically showing the heat treatment evaluation result of this alloy wiring.
- 11 is a view showing the change before and after the heat treatment of the alloy wiring.
- 12A to 12D are reference drawings for explaining a heat treatment process of an alloy wire according to a method for forming a fine wire of the present invention.
- FIG. 13 is a view showing a component ratio of an alloy material that can be employed in a method for forming a fine wiring according to another embodiment of the present invention.
- FIG. 14 is an exemplary view showing a state of an alloy wiring before and after heat treatment of a method for forming a fine wiring using the alloy material of FIG. 13.
- FIG. 16 is a diagram schematically showing the heat treatment evaluation results of the alloy wiring in FIG. 14.
- 17 is a view showing a state after heat treatment of the alloy wiring of FIG. 14.
- FIG. 18 is a view showing a component ratio of an alloy material that can be employed in a method for forming a fine wiring according to another embodiment of the present invention.
- 19 is a graph showing the material composition of a single metal wiring for comparison with embodiments of the present invention.
- FIG. 20 is an exemplary view showing a wiring state before and after the heat treatment of the method for forming a fine wiring using the single metal wiring of FIG. 19.
- FIG. 21 is a view for explaining a heat treatment evaluation result of the single metal wiring in FIG. 20.
- FIG. 22 is a diagram schematically showing the heat treatment evaluation result of the single metal wiring in FIG. 20.
- FIG. 23 is a view including electron micrographs showing enlarged changes before and after the heat treatment of the single metal wiring in FIG. 20.
- FIG. 24 is an exemplary view showing a change in thickness after heat treatment of the single metal wiring of FIG. 20.
- the method for forming a fine wire according to the present embodiment includes a series of procedures in a first step of forming a fine wire on a substrate and a second step of heat-treating the wire using a laser.
- a microwiring pattern having a line width within 2.5 micrometers ( ⁇ m) is formed on the substrate.
- the microwiring pattern may be formed in a single layer structure on a substrate or may be formed in a multi-layer or multi-layer structure through a lamination process.
- the fine wiring pattern is covered by an insulating layer of an oxide film or a nitride film.
- the wiring is formed to include tungsten (W) and molybdenum (Mo) as main materials, for example, 85% by weight or more.
- the wiring material may further include one or more materials selected from silver (Ag), copper, gold (Au), platinum (Pt), aluminum (Al), or a combination thereof.
- the microwiring pattern formed of the wiring material may include carbon atoms or oxygen atoms in the deposition process.
- a source gas prepared to constitute a tungsten: molybdenum weight ratio of 50:50 was used as the alloy wiring.
- a hexacarbonyl tungsten represented by W (CO) 6 may be used as a source gas used as a material for the tungsten wiring.
- LCVD was used to form the fine wiring, and source gas was supplied around the location while irradiating the laser light for forming the fine wiring pattern to the corresponding location of the substrate.
- the gas containing tungsten and the gas containing molybdenum are stored in separate canisters, and supplied through a separate line while controlling the amount through a separate flow regulator (MFC), and then the last part of the supply line.
- MFC separate flow regulator
- the laser light passes through the slit or mask installed to perform beam shaping according to the line width to be formed on the substrate, and becomes a laser light having a constant shape, size, and light intensity distribution. It will investigate the relevant area or area of.
- the supply of gas is continuously made, and the substrate can be moved in the x and y-axis directions planarly on the transport means on which the substrate is placed.
- the specific metal material mentioned above is subjected to laser heat treatment for further performance improvement, unlike general heat treatment.
- the laser is a continuous light laser (CW LASER) that is irradiated with a micro pattern of a substrate reference line width of 2 micrometers and a length of 50 micrometers by repeating two scans at a rate of 3 micrometers per second, resulting in a fine wiring pattern with laser heat treatment.
- CW LASER continuous light laser
- the laser used in the second step is formed with a line width of 1 micrometer larger than the line width of the fine wiring in the beam forming process, and laser light irradiation may be performed in a pulsed manner rather than continuous irradiation.
- the output is properly adjusted so that the temperature from the fine pattern surface to a certain depth maintains an appropriate temperature range.
- the laser heat treatment may be performed by heating to a depth of 1 ⁇ m on the surface of the wiring in a temperature range of 500 ° C. to 650 ° C. and cooling. Cooling is slow to room temperature, but rapid cooling with a cooling medium is also possible.
- the laser heat treatment is performed in situ in the same place without changing the process space. However, by adjusting the optical path, it is performed using a laser having a different output and irradiation program than the laser used for LCVD.
- zapping is performed as a kind of laser repair processing to eliminate the problem and improve the conductivity of the fine wiring pattern.
- the detailed steps may be further included.
- the zapping may be performed to correct the black defects of the alloy wiring, and may perform an improved zapping operation by hot air, microwaves, or a combination thereof, but in such an environment, it is preferable to perform laser treatment to facilitate in situ. .
- the laser used in the laser heat treatment may be used with a strong output or a large period to set the instantaneous power large, or a separate laser source may be used.
- the performance of the wiring film may include a reduction in dispersion of resistance, reduction in average resistance, reduction in deposition line width, improvement in internal film uniformity, and overall performance of crack removal.
- FIGS. 4 to 6 are component ratios in a tungsten single metal microwiring for comparison with the present invention, and the wiring film quality and the surroundings of the wiring by laser heat treatment.
- This is a focused ion beam scanning electron microscope photograph showing a cross section in two directions indicating the shape, staff coverage and size of the membrane.
- the alloy wires were 3.41 mass% carbon, 5.68 mass% oxygen, 43.22 mass% tungsten, 3.61 mass% platinum, and 44.09 mass molybdenum. % As a component, and through FIG. 4, it can be seen that the single metal wiring has 1.8 mass% carbon, 1.55 mass% oxygen, and 96.65 mass% tungsten as components.
- the content ratio of tungsten and molybdenum in the alloy wiring is preferably 5: 5 as the mass ratio and 2: 8 as the atomic mole ratio when considering the properties such as film quality and resistance, and from 2: 8 to 8: 2 as the mass ratio. It was confirmed experimentally that the superiority of the wiring film quality in the range can be maintained without significant change.
- the overall resistance level of the alloy wiring is 100 ohm
- the deposition thickness is 1800nm ⁇ 2040nm
- the thickness deviation is about 10%
- the film properties are very dense
- there are no voids It can be seen that the actual line width after laser heat treatment is about 2 micrometers.
- the overall resistance level of a single metal wiring is 100 ohms
- the deposition thickness is 528nm to 1080nm
- the thickness variation is approximately 50%
- the step coverage state is not cracked
- the film properties are relatively less dense
- the actual line width after laser heat treatment is about 2.5 micrometers.
- the alloy wire side is 20% smaller with a 2 micrometer to 2.5 micrometer line width compared to the single metal wire side, with more dense film properties and no voids.
- a wiring forming apparatus for forming a wiring in a display device such as a liquid crystal display (OLED) or an organic light emitting diode (OLED)
- OLED organic light emitting diode
- LCVD is performed on a single metal wiring, and the line width itself before laser heat treatment is formed to be about 4.5 micrometers wide, whereas the growth rate of the thickness is slower than that of the alloy wiring, so the cross-sectional area within the same deposition time is wide even though the line width is wide. Growth becomes smaller.
- the line width is formed to be larger than 0.5 micrometer at 2 micrometers targeted as a whole, and the cross-sectional area is smaller than that of the alloy wiring, which increases the probability of high resistance.
- the actual measured resistance is equal to 100 ohms because the resistivity or resistance per unit area of a single tungsten metal is smaller than that of a tungsten molybdenum 50:50 weight ratio alloy or resistance per unit area.
- the wiring film quality can be seen immediately through comparison of FIGS. 2, 3 and 5, 6, and the alloy wiring side has a more compact film quality with less cracks and less voids.
- FIGS. 2 and 5 it is easy to think that the wiring film thickness and thickness deviation are also much more uniform because the alloy wiring side is less, which lowers the probability of causing process defects and increases the conductivity stability of the manufactured product. Therefore, even if the resistance values of the alloy wiring and the single metal wiring are simply the same, it can be predicted that the stability and reliability that occupy a part of the electrical properties will be much superior to the alloy wiring.
- tungsten wiring (W) formed of a single metal material and alloy (Alloy) wiring by the method of forming a fine wiring in some additional embodiments of the present invention before and after laser heat treatment in resistance, resistance distribution, cross-sectional state, line width, heat treatment effect, etc. B The performance is more specifically shown with reference to the drawings for accurate comparison.
- FIG. 8 is an exemplary photograph showing the state before and after the heat treatment of the alloy wiring in one embodiment of the present invention
- FIG. 9 is a graph for explaining the heat treatment evaluation result of the alloy wiring
- FIG. 10 is a heat treatment evaluation of the alloy wiring It is a diagram showing the results schematically.
- laser heat treatment was performed to improve the performance of the primary formed microwiring, and the appearance of the microwiring pattern before and after the laser heat treatment was performed is as shown in FIG. 8.
- the microwiring pattern after laser heat treatment shows excellent performance such as a reduction in line width compared to the microwiring pattern before laser heat treatment.
- the resistance average measured before laser heat treatment was about 107.29 MPa, but the resistance average after laser heat treatment was changed to about 94.29 MPa.
- the maximum was reduced by about 19 km and the minimum was reduced by about 13 km.
- the deposition (deposition) line width was decreased from 3.3 ⁇ m to 2.3 ⁇ m and decreased by 1.0 ⁇ m.
- the average resistance decreased from about 107 ⁇ to about 94 ⁇ by about 13 ⁇ .
- the resistance dispersion decreased by about 30% from about 6.9 ⁇ to about 4.9 ⁇ .
- the performance of the alloy wiring after the laser heat treatment according to the present embodiment is superior to that of the alloy wiring before the laser heat treatment or after other conventional heat treatment.
- 11 is a view showing the change before and after the heat treatment of the alloy wiring.
- the alloy wiring changes from an unstable state to a stable state due to an annealing effect by laser heat, thereby increasing the density of the internal film quality.
- 12A to 12D are reference drawings for explaining a heat treatment process of an alloy wire according to a method for forming a fine wire of the present invention.
- the method of forming a fine wiring according to the present embodiment includes a laser heat treatment process.
- a specific microwiring among several microwiring patterns is aligned to a laser focus (see FIG. 12A), preheated in a preset temperature atmosphere (see FIG. 12B), immediately after or within a predetermined period of preheating operation, or the preheating temperature is constant. It may be made to heat with a laser beam in a temperature atmosphere higher than the temperature of preheating before it falls below the temperature (see FIG. 12C).
- the laser beam may have a circular cross-sectional shape tailored to a specific microwiring (see FIG. 12D).
- Heating by the laser beam may be performed by irradiating the laser beam from the upper or lower side of the substrate.
- the ray point beam having a circular cross-section is irradiated to match the central microwiring among the three microwiring patterns (see FIG. 8D).
- the laser beam for laser heat treatment can be irradiated to the wiring surface.
- the laser beam may be performed to selectively heat the wiring surface to a depth of 1 ⁇ m in a temperature atmosphere of 500 ° C to 650 ° C.
- FIG. 13 is a view showing a component ratio of an alloy material that can be employed in a method for forming a fine wiring according to another embodiment of the present invention.
- a material of an alloy wiring according to the present embodiment may include tungsten (W) and molybdenum (Mo).
- the microwiring pattern formed on the substrate with such an alloy material may further include a relatively small amount of carbon atoms (C), oxygen atoms (O), and the like.
- Table 1 shows the contents of the wiring elements.
- the content ratio of the elements contained in the alloy wiring according to this embodiment may be 28.90% by weight of tungsten, 63.64% by weight of molybdenum, 4.93% by weight of oxygen, and 02.53% by weight of carbon.
- Table 1 shows the weight percent (Wt%) of each element in terms of At%.
- the alloy material for the above alloy wiring may correspond to a case where the content ratio (based on weight percent) of tungsten (W) and molybdenum (Mo) is about 3: 7. When such an alloy material is used, it is possible to improve the wiring performance by forming a microwiring pattern on the substrate and then performing laser heat treatment.
- 14 is an exemplary view showing a state of an alloy wiring before and after heat treatment of a method for forming a fine wiring using the alloy material of FIG. 13.
- 15 is a graph for explaining the heat treatment evaluation result of the alloy wiring in FIG. 14.
- 16 is a diagram schematically showing the heat treatment evaluation results of the alloy wiring in FIG. 14.
- 17 is a view showing a state after heat treatment of the alloy wiring of FIG. 14.
- the material of the alloy wiring according to the present embodiment may contain tungsten (W) and molybdenum (Mo) in a weight ratio of 2: 8 or 8: 2 in the order described.
- W tungsten
- Mo molybdenum
- laser heat treatment is performed.
- the appearance of the fine wiring pattern before and after the laser heat treatment is performed is as shown in FIG. 14.
- the microwiring pattern after the laser heat treatment shows excellent performance such as a reduction in line width compared to the microwiring pattern before the laser heat treatment.
- the resistance average measured before laser heat treatment after zapping was about 108.6 MPa, but the resistance average measured after laser heat treatment was about 99.4 MPa. Changed. The maximum was reduced by about 19 km and the minimum was reduced by about 5 km.
- the deposition (deposition) line width was decreased from 3.4 ⁇ m to 2.3 ⁇ m and decreased by 1.1 ⁇ m.
- the average resistance decreased from about 109 ⁇ to about 99 ⁇ by about 10 ⁇ .
- the resistance spread increased by about 20% from about 4.9 km to about 5.9 km.
- the content ratio (based on weight percent) of tungsten (W) and molybdenum (Mo) was also tested for the case of 7: 3 in the order described. As a result, it was confirmed that the wiring performance was similar to that of the alloy material having a content ratio of 3: 7 above.
- the content ratio (based on weight percent) of tungsten (W) and molybdenum (Mo) was also tested in the case of 8: 2 and 2: 8. As a result, it was confirmed that the wiring performance was similar to that of the alloy material having a content ratio of 3: 7 above.
- the method for forming a fine wiring according to this embodiment exhibits excellent wiring performance in the range of 20 to 80% by weight and 80 to 20% by weight regardless of the order in which the content ratio of tungsten and molybdenum is described. You can.
- FIG. 18 is a view showing a component ratio of an alloy material that can be employed in a method for forming a fine wiring according to another embodiment of the present invention.
- the material of the alloy wiring according to this embodiment may include tungsten (W) and molybdenum (Mo). Further, the wiring material may further contain a predetermined amount of platinum (Pt).
- the microwiring pattern formed on the substrate using such an alloy material may further include a relatively small amount of carbon atoms (C), oxygen atoms (O), and the like.
- Table 2 shows the contents of the above-mentioned wiring materials.
- the content ratio of the elements contained in the alloy wiring according to this embodiment may be 48.27% by weight of tungsten, 34.06% by weight of molybdenum, 10.34% by weight of platinum, 3.59% by weight of oxygen, and 03.74% by weight of carbon.
- Table 2 shows the weight percent (Wt%) of each element in terms of At%.
- the content ratio of elements contained in the alloy wiring material is measured by matrix correction or ZAF correction. It can be calculated. Matrix correction or ZAF correction corrects errors in quantitative results in which the amount of X-rays varies depending on the element of the sample generated in an energy dispersive spectrometer (EDS) using a scanning electron microscope (SEM). And calibrating.
- the alloy wiring material as described above may correspond to a case where the content ratio (based on weight percent) of tungsten (W) and molybdenum (Mo) is about 5: 3.5 and contains other metals such as platinum (about 10 weight percent). Even when using such an alloy wiring material, it is possible to improve the performance of the wiring by performing a laser heat treatment after forming a fine wiring pattern on the substrate.
- 19 is a graph showing the material composition of a single metal wiring for comparison with embodiments of the present invention.
- a material of a single metal wiring that can be used for a microwiring pattern may include tungsten (W).
- the microwiring pattern formed on the substrate using a single tungsten material may further include a small amount of elements such as carbon (C) and oxygen (O).
- Table 3 shows the content of the tungsten wiring material with respect to the elements.
- FIG. 20 is an exemplary view showing a wiring state before and after heat treatment of a method for forming a fine wiring using a single metal wiring in the comparative example of FIG. 19.
- 21 is a view for explaining a heat treatment evaluation result of the single metal wiring in FIG. 20.
- 22 is a diagram schematically showing the heat treatment evaluation result of the single metal wiring in FIG. 20.
- the state of the microwiring pattern before and after performing the laser heat treatment is shown in contrast to FIG. 20.
- the microwiring pattern after the laser heat treatment It can be seen that the line width of was decreased compared to the line width of the fine wiring pattern before the laser heat treatment.
- the resistance of each microwiring pattern of a predetermined length measured before laser heat treatment is 62, 73, 63, 78, 82, 73, 75 ( ⁇ )
- the average was about 72.29 kPa
- the resistance measured after laser heat treatment was 60, 62, 51, 72, 77, 58, 57 (kPa) in the order described and the average was about 62.71 kPa.
- the resistance to the microwiring pattern was found to be reduced by a maximum of 17 ⁇ and a minimum of 2 ⁇ .
- the deposition (deposition) line width decreased from 4.5 ⁇ m to 2.5 ⁇ m and decreased by 2.0 ⁇ m.
- the average resistance was found to decrease by about 10 km from about 72 km to about 62 km.
- the resistance distribution increased by about 18% from about 7.4 ⁇ to about 9.0 ⁇ .
- FIG. 23 is a view including electron micrographs showing enlarged changes before and after the heat treatment of the single metal wiring in FIG. 20.
- 24 is an exemplary view showing a change in thickness after heat treatment of the single metal wiring of FIG. 20.
- the average resistance can be primarily lowered from 150 ⁇ to 72 ,, and the average resistance can be further reduced from 72 ⁇ to 62 ⁇ by laser heat treatment. have.
- the tungsten wiring changes from an unstable state (A1) to a stable state (A2, B2) according to the effect of converting properties by laser heat, and accordingly It can be seen that the density of the inner film quality increases.
- the line width of the wire can be reduced from about 4.5 ⁇ m to about 3.06 ⁇ m to about 2.5 ⁇ m (see FIG. 24).
- the line width is large and the size of the wiring cross-sectional area formed is limited due to the limitation of deposition in the thickness direction, and there is a high possibility of voids or cracks even in the film quality.
- the above-described laser heat treatment includes, but is not limited to, a method of condensing a laser beam with a condensing lens and then scanning the wiring surface with a scanner or a stage.
- it may be implemented to heat a plurality of fine wirings or fine wirings in the form of lines by a reflective laser beam formed by a reflector with a substrate interposed therebetween.
- the micro-wiring forming apparatus that implements the above-described micro-wiring forming method is integrally coupled to the first control device that controls the operation of the laser gas phase chemical apparatus, or includes a second control device that connects the first control device and the network.
- the first or second control device may include at least one or more selected from a programming logic controller having a logic circuit, a microcomputer, and a computing device.
- the computing device includes a processor and a memory, and the processor may be configured to implement a micro-wire formation method through a function of a software module by executing and loading a program or a software module stored in the memory.
- the software module provides a source gas containing a plurality of metal elements through laser chemical vapor deposition (LCVD) while forming an alloy wiring including a plurality of metal elements on a substrate, and a laser in an area including the alloy wiring.
- It may include a laser heat treatment module for performing heat treatment, and a zapping management module that controls a zapping process for repairing defects on the wire before forming the LCVD alloy wire.
- the zapping management module according to a result of real-time observation of a repair process through a laser chemical vapor deposition apparatus, an optical system coupled to the laser chemical vapor deposition apparatus, and an observation device, a zapping process by the laser chemical vapor deposition apparatus It can be implemented to perform automatically.
- the zapping management module may perform source gas selection and injection amount control, laser generator control, and optical system control through control of a component coupled to the laser chemical vapor deposition apparatus.
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Abstract
Description
Element | Wt% | At% |
C (CK) | 02.53 | 15.74 |
O (OK) | 04.93 | 23.00 |
W (WM) | 28.90 | 11.73 |
Mo (MoL) | 63.64 | 49.52 |
Element | Wt% | At% |
C (CK) | 03.74 | 25.81 |
O (OK) | 03.59 | 18.59 |
W (WM) | 48.27 | 21.77 |
Pt (PtM) | 10.34 | 04.40 |
Mo (MoL) | 34.06 | 29.43 |
Element | Wt% | At% |
C (CK) | 03.04 | 27.77 |
O (OK) | 02.30 | 15.74 |
W (WM) | 94.66 | 56.49 |
Claims (6)
- 레이저 화학기상증착(LCVD)을 통해 복수 금속 원소를 포함하는 소오스 가스를 공급하면서 기판에 복수 금속 원소를 포함한 합금 배선을 형성하는 LCVD 합금 배선 형성 단계, 및상기 합금 배선을 포함한 영역에 레이저 열처리를 실시하는 레이저 열처리 단계를 포함하여 이루어지는 미세 배선 형성 방법.
- 제 1 항에 있어서,상기 합금 배선은 텅스텐(tungsten, W)과 몰리브덴(Molybdenum, Mo)을 합한 함량이 80중량% 이상이고,텅스텐 : 몰리브덴의 비율이 중량으로 따질 때 20 : 80 내지 80 : 20 범위 내인 것을 특징으로 하는 미세 배선 형성 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 합금 배선에는 은(Ag), 금(Au), 백금(Pt) 및 알루미늄(Al) 가운데 적어도 하나가 3중량% 내지 5중량% 함유되는 것을 특징으로 하는 미세 배선 형성 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 레이저 열처리 단계에서 상기 합금 배선의 표면에서 깊이 1㎛까지를 500℃ 내지 650℃의 온도 범위로 집중적으로 가열한 후 냉각하는 것을 특징으로 하는 미세 배선 형성 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 LCVD 합금 배선 형성 단계 전에 결함을 리페어하는 재핑(zapping) 단계를 더 포함하는 것을 특징으로 하는 미세 배선 형성 방법.
- 제 5 항에 있어서,상기 재핑 단계의 리페어는 레이저광에 의해 이루어지며, 상기 LCVD 합금 배선 형성 단계 및 상기 레이저 처리 단계에서 사용되는 레이저 화학기상증착 장치와, 상기 레이저 화학기상증착 장치에 결합된 광학계와 관측장치를 통해 리페어 공정이 실시간 관측되면서 상기 상기 레이저 화학기상증착 장치에 결합된 제어장치에 의해 자동으로 수행되는 것을 특징으로 하는 미세 배선 형성 방법.
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