JP6954681B2 - レーザ化学気相蒸着を用いた微細配線形成方法 - Google Patents

レーザ化学気相蒸着を用いた微細配線形成方法 Download PDF

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Publication number
JP6954681B2
JP6954681B2 JP2019564537A JP2019564537A JP6954681B2 JP 6954681 B2 JP6954681 B2 JP 6954681B2 JP 2019564537 A JP2019564537 A JP 2019564537A JP 2019564537 A JP2019564537 A JP 2019564537A JP 6954681 B2 JP6954681 B2 JP 6954681B2
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wiring
laser
heat treatment
alloy
fine
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JP2021502473A5 (ko
JP2021502473A (ja
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ジン キム、ウ
ジン キム、ウ
ジュン ク、ヒョン
ジュン ク、ヒョン
テ チャ、ジョン
テ チャ、ジョン
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Cowin DST Co Ltd
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Cowin DST Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP2019564537A 2018-09-17 2018-09-18 レーザ化学気相蒸着を用いた微細配線形成方法 Active JP6954681B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2018-0111161 2018-09-17
KR1020180111161A KR102034394B1 (ko) 2018-09-17 2018-09-17 레이저 화학기상증착을 이용한 미세 배선 형성 방법
PCT/KR2018/010962 WO2020059897A1 (ko) 2018-09-17 2018-09-18 레이저 화학기상증착을 이용한 미세 배선 형성 방법

Publications (3)

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JP2021502473A JP2021502473A (ja) 2021-01-28
JP2021502473A5 JP2021502473A5 (ko) 2021-03-11
JP6954681B2 true JP6954681B2 (ja) 2021-10-27

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JP (1) JP6954681B2 (ko)
KR (1) KR102034394B1 (ko)
CN (1) CN111615868B (ko)
TW (1) TWI689620B (ko)
WO (1) WO2020059897A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114369815A (zh) * 2022-01-07 2022-04-19 武汉理工大学 一种高通量制备薄膜或涂层的方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834834A (en) * 1987-11-20 1989-05-30 Massachusetts Institute Of Technology Laser photochemical etching using surface halogenation
JP2655666B2 (ja) * 1988-02-10 1997-09-24 株式会社日立製作所 配線形成方法
KR930001896B1 (ko) * 1990-05-28 1993-03-19 한국전기통신공사 반도체 장치의 금속배선구조 및 그 형성방법
KR950010042B1 (ko) * 1991-06-27 1995-09-06 삼성전자주식회사 반도체 장치의 금속 배선층 형성방법
US5246745A (en) * 1991-12-23 1993-09-21 International Business Machines Corporation Laser-induced chemical vapor deposition of thin-film conductors
JP3523346B2 (ja) * 1994-11-11 2004-04-26 株式会社ルネサステクノロジ 半導体装置における配線修正方法
JP3790361B2 (ja) * 1998-04-24 2006-06-28 日本特殊陶業株式会社 導電ペースト組成物およびそれを用いたセラミック配線基板
KR100560289B1 (ko) * 1998-12-29 2006-06-14 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
JP2003282478A (ja) * 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法
JP2004031603A (ja) * 2002-06-25 2004-01-29 Nec Corp レーザｃｖｄ装置、レーザｃｖｄ法、パターン欠陥修正装置及びパターン欠陥修正方法
JP2005097697A (ja) * 2003-09-26 2005-04-14 Toshiba Corp スパッタリングターゲットとその製造方法
KR20050092982A (ko) * 2004-03-17 2005-09-23 엘지.필립스 엘시디 주식회사 고품질의 박막을 증착하기 위한 레이저 화학기상증착 장치
JP2006317726A (ja) * 2005-05-13 2006-11-24 Nec Lcd Technologies Ltd 断線修正方法及びアクティブマトリックス基板の製造方法並びに表示装置
JP2007081326A (ja) * 2005-09-16 2007-03-29 Dainippon Screen Mfg Co Ltd 配線形成システムおよびその方法
TWI431380B (zh) * 2006-05-12 2014-03-21 Photon Dynamics Inc 沉積修復設備及方法
JPWO2007141883A1 (ja) * 2006-06-06 2009-10-15 株式会社日本マイクロニクス 電気配線の形成方法およびその補修方法
KR20080070368A (ko) * 2007-01-26 2008-07-30 삼성전자주식회사 레이저 어닐링을 이용한 엠아이엠 커패시터의 형성방법들
TWI385273B (zh) * 2007-03-30 2013-02-11 Ind Tech Res Inst 缺陷修補裝置及靶材結構
KR20090016254A (ko) * 2007-08-10 2009-02-13 주식회사 코윈디에스티 레이저를 이용한 금속박막 형성장치 및 방법
KR100964314B1 (ko) * 2007-12-24 2010-06-16 주식회사 코윈디에스티 포토 마스크 리페어 장치 및 그 방법
TW201402859A (zh) * 2012-07-03 2014-01-16 Of Energy Ministry Of Economic Affairs Bureau 陣列式雷射輔助電漿增強化學氣相沉積系統
JP6042793B2 (ja) * 2012-12-07 2016-12-14 富士フイルム株式会社 導電膜の製造方法、プリント配線基板
CN203128658U (zh) * 2012-12-25 2013-08-14 王奉瑾 激光cvd镀膜设备
JP2014192465A (ja) * 2013-03-28 2014-10-06 Fujifilm Corp 電気回路配線基板の製造方法
CN103668126A (zh) * 2013-11-29 2014-03-26 武汉理工大学 激光化学气相沉积装置
CN103781285B (zh) * 2014-02-18 2016-04-13 华中科技大学 陶瓷基板表面导电线路的制作与修复方法
CN106414791A (zh) * 2014-05-27 2017-02-15 奥博泰克有限公司 藉由激光诱发正向转印以印刷三维结构
KR101820098B1 (ko) * 2016-03-31 2018-01-19 참엔지니어링(주) 증착 장치 및 증착 방법
KR101819555B1 (ko) * 2016-06-15 2018-01-17 주식회사 에이치비테크놀러지 박막형성 장치
KR102067626B1 (ko) * 2016-12-14 2020-01-17 국민대학교산학협력단 레이저 화학기상 증착 장치 및 이를 이용한 박막 형성방법
KR102060222B1 (ko) * 2017-03-23 2019-12-30 주식회사 코윈디에스티 미세 배선 형성 방법

Also Published As

Publication number Publication date
TW202012698A (zh) 2020-04-01
CN111615868A (zh) 2020-09-01
JP2021502473A (ja) 2021-01-28
CN111615868B (zh) 2023-11-21
KR102034394B1 (ko) 2019-10-18
TWI689620B (zh) 2020-04-01
WO2020059897A1 (ko) 2020-03-26

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