TWI689620B - 使用雷射化學氣相沈積形成精細圖案之方法 - Google Patents

使用雷射化學氣相沈積形成精細圖案之方法 Download PDF

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Publication number
TWI689620B
TWI689620B TW107135121A TW107135121A TWI689620B TW I689620 B TWI689620 B TW I689620B TW 107135121 A TW107135121 A TW 107135121A TW 107135121 A TW107135121 A TW 107135121A TW I689620 B TWI689620 B TW I689620B
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Taiwan
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laser
forming
alloy wire
annealing
wire
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TW107135121A
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English (en)
Chinese (zh)
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TW202012698A (zh
Inventor
金宇珍
具亨俊
車正泰
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韓商Ｃｏｗｉｎｄｓｔ股份有限公司
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Publication of TWI689620B publication Critical patent/TWI689620B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW107135121A 2018-09-17 2018-10-04 使用雷射化學氣相沈積形成精細圖案之方法 TWI689620B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0111161 2018-09-17
KR1020180111161A KR102034394B1 (ko) 2018-09-17 2018-09-17 레이저 화학기상증착을 이용한 미세 배선 형성 방법

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TW202012698A TW202012698A (zh) 2020-04-01
TWI689620B true TWI689620B (zh) 2020-04-01

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JP (1) JP6954681B2 (ko)
KR (1) KR102034394B1 (ko)
CN (1) CN111615868B (ko)
TW (1) TWI689620B (ko)
WO (1) WO2020059897A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114369815A (zh) * 2022-01-07 2022-04-19 武汉理工大学 一种高通量制备薄膜或涂层的方法

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TW200401839A (en) * 2002-06-25 2004-02-01 Nec Corp Laser CVD device and laser CVD method
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TW200839030A (en) * 2007-03-30 2008-10-01 Ind Tech Res Inst Apparatus for reparing defets of circuit pattern and structure of target material
CN203128658U (zh) * 2012-12-25 2013-08-14 王奉瑾 激光cvd镀膜设备
TW201402859A (zh) * 2012-07-03 2014-01-16 Of Energy Ministry Of Economic Affairs Bureau 陣列式雷射輔助電漿增強化學氣相沉積系統
CN103668126A (zh) * 2013-11-29 2014-03-26 武汉理工大学 激光化学气相沉积装置
CN107523803A (zh) * 2016-06-15 2017-12-29 Hb技术有限公司 薄膜形成装置

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JPH01204448A (ja) * 1988-02-10 1989-08-17 Hitachi Ltd 配線形成方法
TW200401839A (en) * 2002-06-25 2004-02-01 Nec Corp Laser CVD device and laser CVD method
KR20080070368A (ko) * 2007-01-26 2008-07-30 삼성전자주식회사 레이저 어닐링을 이용한 엠아이엠 커패시터의 형성방법들
TW200839030A (en) * 2007-03-30 2008-10-01 Ind Tech Res Inst Apparatus for reparing defets of circuit pattern and structure of target material
TW201402859A (zh) * 2012-07-03 2014-01-16 Of Energy Ministry Of Economic Affairs Bureau 陣列式雷射輔助電漿增強化學氣相沉積系統
CN203128658U (zh) * 2012-12-25 2013-08-14 王奉瑾 激光cvd镀膜设备
CN103668126A (zh) * 2013-11-29 2014-03-26 武汉理工大学 激光化学气相沉积装置
CN107523803A (zh) * 2016-06-15 2017-12-29 Hb技术有限公司 薄膜形成装置

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Publication number Publication date
TW202012698A (zh) 2020-04-01
CN111615868A (zh) 2020-09-01
JP2021502473A (ja) 2021-01-28
JP6954681B2 (ja) 2021-10-27
CN111615868B (zh) 2023-11-21
KR102034394B1 (ko) 2019-10-18
WO2020059897A1 (ko) 2020-03-26

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