WO2019220599A1 - ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法 - Google Patents

ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法 Download PDF

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WO2019220599A1
WO2019220599A1 PCT/JP2018/019179 JP2018019179W WO2019220599A1 WO 2019220599 A1 WO2019220599 A1 WO 2019220599A1 JP 2018019179 W JP2018019179 W JP 2018019179W WO 2019220599 A1 WO2019220599 A1 WO 2019220599A1
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Prior art keywords
adhesive layer
region
dicing
pressure
sensitive adhesive
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PCT/JP2018/019179
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English (en)
French (fr)
Japanese (ja)
Inventor
尚弘 木村
強 田澤
大久保　恵介
達也 矢羽田
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日立化成株式会社
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Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to PCT/JP2018/019179 priority Critical patent/WO2019220599A1/ja
Priority to PCT/JP2019/019574 priority patent/WO2019221246A1/ja
Priority to KR1020207033514A priority patent/KR102278942B1/ko
Priority to SG11202011259WA priority patent/SG11202011259WA/en
Priority to JP2020519925A priority patent/JP6789500B2/ja
Priority to CN201980032401.6A priority patent/CN112219264B/zh
Priority to TW108117038A priority patent/TWI778263B/zh
Publication of WO2019220599A1 publication Critical patent/WO2019220599A1/ja

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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Definitions

  • the present disclosure relates to a dicing / die bonding integrated film, a manufacturing method thereof, and a manufacturing method of a semiconductor device using the film.
  • Semiconductor devices are manufactured through the following steps. First, the dicing process is carried out with the dicing adhesive film attached to the wafer. Thereafter, an expanding process, a picking process, a mounting process, a die bonding process, and the like are performed.
  • a film called a dicing / die bonding integrated film is used.
  • This film has a structure in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order.
  • the film is used as follows. First, the wafer is diced in a state where the surface on the adhesive layer side is attached to the wafer and the wafer is fixed by a dicing ring. As a result, the wafer is divided into a large number of chips.
  • the chip is removed from the pressure-sensitive adhesive layer together with the adhesive piece obtained by dividing the adhesive layer into pieces. Pick up. Thereafter, the semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via the adhesive piece.
  • the laminated body which consists of the chip
  • an adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is referred to as a UV curable type.
  • the pressure-sensitive adhesive layer in which the adhesive force remains constant without being irradiated with ultraviolet rays in the semiconductor device manufacturing process is called a pressure-sensitive type.
  • the dicing / die bonding integrated film with pressure-sensitive adhesive layer does not require users (mainly semiconductor device manufacturers) to carry out the process of irradiating ultraviolet rays, and there is no need for equipment for this purpose. There are benefits.
  • the pressure-sensitive adhesive layer is a UV curable type in that it contains a component that is cured by ultraviolet light.
  • a dicing die-bonding film that can be said to be a pressure-sensitive type because it does not require irradiation with ultraviolet rays in the manufacturing process.
  • the pressure-sensitive adhesive layer of the dicing die-bonding integrated film is required to have a high adhesive force to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the pressure-sensitive adhesive layer is insufficient, peeling occurs between the adhesive layer and the pressure-sensitive adhesive layer as the dicing blade rotates at a high speed, and the chip flies with the adhesive piece (hereinafter referred to as “DAF”). Or a phenomenon in which the dicing ring peels from the adhesive layer due to the flow of cutting water (hereinafter, this phenomenon is referred to as “ring peeling”). The present inventors paid attention to the fact that these phenomena become remarkable as the size of a chip to be manufactured by dicing becomes smaller.
  • the present inventors are applicable to a process of dicing a wafer into a large number of small chips (area 9 mm 2 or less), and a predetermined amount of active energy rays (for example, ultraviolet rays) are irradiated on a specific portion in advance. Therefore, the present inventors have developed a dicing / die bonding integrated film that has an adhesive layer in which the adhesive strength of the part is lower than that of the other part and satisfies the following characteristics.
  • the region where the dicing ring is attached has a high adhesive strength that can withstand the flow of cutting water in the dicing process, while the region that is pre-irradiated with a predetermined amount of active energy rays can withstand external force from a dicing blade or the like.
  • the inventors worked on the development of a dicing / die bonding integrated film having adhesive strength suitable for subsequent pickup.
  • the present disclosure can be applied to a process of dicing a wafer into a large number of small chips (area 9 mm 2 or less), and has a pressure-sensitive adhesive layer that can sufficiently suppress DAF skipping in the dicing process and has excellent pickup properties.
  • An object of the present invention is to provide a dicing / die bonding integrated film and a method for producing the same. Moreover, this indication aims at providing the manufacturing method of the semiconductor device using this dicing die-bonding integrated film.
  • One aspect of the present disclosure relates to a method for manufacturing a semiconductor device.
  • the manufacturing method covers a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface on the opposite side, and a central portion of the second surface of the pressure-sensitive adhesive layer.
  • a step of preparing a dicing / die bonding integrated film provided with an adhesive layer provided on the substrate, a wafer attached to the adhesive layer of the dicing / die bonding integrated film, and a second surface of the adhesive layer A step of attaching a dicing ring to the substrate, a step of dividing the wafer into a plurality of chips having an area of 9 mm 2 or less (dicing step), and an adhesive piece obtained by dividing the adhesive layer into pieces, A step of picking up from the layer and a step of mounting the chip on the substrate or another chip through the adhesive piece, the pressure-sensitive adhesive layer being the first corresponding to the region of the adhesive layer to which the wafer is attached.
  • the adhesive strength of the first region with respect to the adhesive layer measured at a temperature of 23 ° C. under a peeling angle of 30 ° and a peeling speed of 60 mm / min, is 1.2 N / 25 mm to 4.5 N / 25 mm.
  • a semiconductor device can be manufactured with a sufficiently high yield due to the fact that DAF jumping in the dicing process can be sufficiently suppressed and excellent pick-up properties from the adhesive layer can be achieved.
  • One aspect of the present disclosure relates to a dicing / die bonding integrated film.
  • This film has a base material layer, an adhesive layer having a first surface facing the base material layer and a second surface on the opposite side, and an adhesive provided so as to cover the center of the second surface
  • the pressure-sensitive adhesive layer includes a first region including at least a region corresponding to a wafer attachment position in the adhesive layer, and a second region positioned so as to surround the first region.
  • the first region is a region in which the adhesive strength is lower than that of the second region by irradiation with active energy rays, and the temperature is 23 ° C. and the peeling angle is 30 ° and the peeling speed is 60 mm / min.
  • the measured adhesive strength of the first region to the adhesive layer is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less.
  • DAF jumping in the dicing process can be sufficiently suppressed, and excellent pick-up property from the adhesive layer can be achieved.
  • a semiconductor device can be manufactured with a yield.
  • the adhesive force of the adhesive layer to the stainless steel substrate in the second region is 0.2 N / 25 mm or more.
  • This adhesive strength means the peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min.
  • the first and second regions of the pressure-sensitive adhesive layer are made of, for example, the same composition before irradiation with active energy rays, and the first region is 10 to 1000 mJ / second relative to the region that becomes the first region. It is formed through a step of irradiating an active energy ray in an amount of cm 2 .
  • One aspect of the present disclosure relates to a method of manufacturing the dicing / die bonding integrated film.
  • the first aspect of this production method is formed on the surface of the base material layer, the pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays, and the surface of the pressure-sensitive adhesive layer.
  • the step of producing a laminate including the adhesive layer and the step of irradiating active energy rays to the region to be the first region of the pressure-sensitive adhesive layer included in the laminate are included in this order.
  • the second aspect of the production method includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiating active energy rays on the surface of the base material layer, and a pressure-sensitive adhesive layer.
  • the step of irradiating the region to be the first region with active energy rays and the step of laminating the adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy rays are included in this order.
  • the present invention can be applied to a process of dicing a wafer into a large number of small chips, can sufficiently suppress DAF jump in the dicing process, and is equipped with a pressure-sensitive adhesive layer having excellent pickup properties.
  • An integral film is provided.
  • the manufacturing method of a dicing die-bonding integrated film and the manufacturing method of a semiconductor device using the said film are provided.
  • FIG. 1A is a plan view showing an embodiment of a dicing / die bonding integrated film
  • FIG. 1B is a schematic cross-sectional view along the line BB shown in FIG. 1A
  • FIG. 2 is a schematic view showing a state in which a dicing ring is attached to the peripheral portion of the pressure-sensitive adhesive layer of the dicing / die bonding integrated film and a wafer is attached to the surface of the adhesive layer.
  • FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the pressure-sensitive adhesive layer relative to the adhesive layer is measured.
  • FIG. 4 is a schematic cross-sectional view of an embodiment of a semiconductor device.
  • 5 (a) to 5 (d) are cross-sectional views schematically showing a process of manufacturing DAF (a laminate of a chip and an adhesive piece).
  • 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG.
  • FIG. 7 is a cross-sectional view schematically showing the process of manufacturing the semiconductor device shown in FIG. 8 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG.
  • (meth) acryl means acryl or methacryl.
  • FIG. 1A is a plan view showing a dicing / die bonding integrated film according to this embodiment
  • FIG. 1B is a schematic cross-sectional view taken along line BB of FIG. Dicing / die bonding integrated film 10 (hereinafter, simply referred to as “film 10” in some cases) is a semiconductor including a dicing process for dividing wafer W into a plurality of chips having an area of 9 mm 2 or less and a subsequent pick-up process.
  • the present invention is applied to the device manufacturing process (see FIGS. 5C and 5D).
  • the film 10 includes a base material layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the base material layer 1 and a second surface F2 opposite to the first surface F1, and a second surface F2 of the pressure-sensitive adhesive layer 3. And an adhesive layer 5 provided so as to cover the central portion of the substrate in this order.
  • an adhesive layer 5 provided so as to cover the central portion of the substrate in this order.
  • the base material layer 1 has a predetermined length (
  • the laminated body of the adhesive layer 3 and the adhesive layer 5 may be arranged at a predetermined interval so as to be aligned in the longitudinal direction.
  • the pressure-sensitive adhesive layer 3 includes a first region 3a that includes at least a region Rw corresponding to the attachment position of the wafer W in the adhesive layer 5, and a second region 3b that is positioned so as to surround the first region 3a. .
  • a broken line in FIGS. 1A and 1B indicates a boundary between the first region 3a and the second region 3b.
  • the first region 3a and the second region 3b are made of the same composition before irradiation with active energy rays.
  • the first region 3a is a region in which the adhesive force is reduced as compared with the second region 3b when irradiated with active energy rays such as ultraviolet rays.
  • the second region 3b is a region where the dicing ring DR is attached (see FIG. 2).
  • the second region 3b is a region that is not irradiated with active energy rays and has a high adhesive force to the dicing ring DR.
  • the adhesive strength of the first region 3a to the adhesive layer 5 is 1.2 N / 25 mm or more and 4.5 N / 25 mm or less.
  • This adhesive strength is a 30 ° peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min.
  • FIG. 3 is a cross-sectional view schematically showing a state in which the 30 ° peel strength of the pressure-sensitive adhesive layer 3 is measured with the adhesive layer 5 of the measurement sample (width 25 mm ⁇ length 100 mm) fixed to the support plate 80. It is.
  • the lower limit value of the adhesive strength may be 1.5 N / 25 mm or 2.0 N / 25 mm, and the upper limit value may be 3.5 N / 25 mm or 2.5 N / 25 mm.
  • the film 10 is suitable for a dicing process for dividing a wafer into a plurality of small chips having an area of 9 mm 2 or less and a subsequent pickup process.
  • the present inventors have studied by paying attention to the fact that the pickup behavior of a small chip having a size of 3 mm ⁇ 3 mm or less (area 9 mm 2 or less) is different from that of a large chip having a size of, for example, about 8 mm ⁇ 6 mm.
  • the adhesive strength of the first region 3a to the adhesive layer 5 was specified in the above range (1.2 N / 25 mm or more and 4.5 N / 25 mm or less).
  • the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 is within the above range.
  • the interface peeling between the adhesive layer and the adhesive piece progresses from the edge part of the DAF toward the center part, but the adhesive force of the adhesive layer is too strong, so the interface peeling increases the pin.
  • the chip does not catch up, and the chip is deformed excessively and is liable to be cracked or picked up.
  • the pick-up property of the large chip is mainly governed by the interface peeling between the adhesive layer and the adhesive piece, and the adhesive force of the adhesive layer to the adhesive layer is smaller than the lower limit (1.2 N / 25 mm) of the above range.
  • the present inventors have found that it should be set.
  • the pick-up property of the small chip is mainly governed by the peeling of the edge portion of the DAF, and once the edge portion is peeled off by the push-up by the pin, the peeling of the interface between the adhesive layer and the adhesive piece is smooth thereafter. The present inventors have found that the process proceeds.
  • region 3a which has the adhesive force of the said range with respect to the adhesive bond layer 5 is formed by irradiation of an active energy ray.
  • the present inventors have found that reducing the adhesive strength of the pressure-sensitive adhesive layer by irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive strength of the first region 3a is excessively reduced by the irradiation of the active energy ray, the 30 ° peel strength of the first region 3a with respect to the adhesive layer 5 is lowered, while the pickup target is small. In the case of a chip, the edge portion of the DAF tends to be difficult to peel off, and the chip is liable to be deformed excessively to cause cracks or pickup errors.
  • region 3a with respect to the adhesive bond layer 5 is what does not reduce excessively the adhesive force before irradiating an active energy ray. As a result, peeling of the edge portion of the DAF easily occurs even in a small chip.
  • the adhesive strength of the first region 3a of the adhesive layer 3 can be reduced by, for example, relatively reducing the amount of the crosslinking agent in the adhesive layer or reducing the irradiation amount of the active energy ray. Can be adjusted.
  • the adhesive strength of the second region R2 to the stainless steel substrate is preferably 0.2 N / 25 mm or more.
  • This adhesive strength is 90 ° peel strength measured at a temperature of 23 ° C. under conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min.
  • the lower limit value of the adhesive strength may be 0.3 N / 25 mm or 0.4 N / 25 mm, and the upper limit value is, for example, 2.0 N / 25 mm, or 1.0 N / 25 mm.
  • the pressure-sensitive adhesive layer before irradiation with active energy rays is made of a pressure-sensitive adhesive composition containing, for example, a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent.
  • the second region R2 where the active energy ray is not irradiated has the same composition as the pressure-sensitive adhesive layer before the active energy ray irradiation.
  • the components contained in the pressure-sensitive adhesive composition will be described in detail.
  • the pressure-sensitive adhesive composition contains a (meth) acrylic resin having a chain polymerizable functional group, and the functional group is preferably at least one selected from an acryloyl group and a methacryloyl group.
  • the content of the functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol / g, 0.3 to 1.0 mmol / g, or 0.5 to 0.8 mmol / g. g may be sufficient.
  • first region R1 When the content of the functional group is 0.1 mmol / g or more, it is easy to form a region (first region R1) in which the adhesive strength is moderately reduced by irradiation with active energy rays, while 1.2 mmol / g It is easy to achieve the excellent pick-up property by being g or less.
  • (Meth) acrylic resin can be obtained by synthesis by a known method.
  • the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization.
  • the polymerization reaction includes radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anion polymerization, coordination polymerization, immodal polymerization, ATRP (atom transfer radical polymerization) and RAFT ( A technique such as reversible addition-fragmentation chain transfer polymerization) may also be mentioned.
  • ATRP atom transfer radical polymerization
  • RAFT A technique such as reversible addition-fragmentation chain transfer polymerization
  • synthesis by radical polymerization using a solution polymerization method can be blended using the resin solution obtained by polymerization as it is, in addition to good economic efficiency, high reaction rate, easy polymerization control, etc
  • the synthesis method of the (meth) acrylic resin will be described in detail by taking as an example a method of obtaining the (meth) acrylic resin by radical polymerization using the solution polymerization method.
  • the monomer used when synthesizing the (meth) acrylic resin is not particularly limited as long as it has one (meth) acryloyl group in one molecule. Specific examples include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, and isoamyl (meth) acrylate.
  • Aromatic (meth) acrylates such as 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethyl hexahydrophthalimide, 2- (meth) acryloyloxyethyl-N-carbazole, etc.
  • a compound having an ethylenically unsaturated group and an epoxy group (2-ethyl-2-oxetanyl) methyl (meth) acrylate, (2-methyl-2-oxetanyl) methyl (meth) acrylate, 2- (2-ethyl- 2-Oxetanyl) ethyl ( ) Acrylate, 2- (2-methyl-2-oxetanyl) ethyl (meth) acrylate, 3- (2-ethyl-2-oxetanyl) propyl (meth) acrylate, 3- (2-methyl-2-oxetanyl) propyl
  • compounds having an ethylenically unsaturated group and oxetanyl group such as (meth) acrylate
  • compounds having an ethylenically unsaturated group and isocyanate group such as 2- (meth) acryloyloxyethyl isocyanate
  • the (meth) acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like as a reaction point with a functional group-introducing compound or a crosslinking agent described later.
  • Monomers for synthesizing a (meth) acrylic resin having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 3-chloro-2.
  • Monomers for synthesizing a (meth) acrylic resin having a glycidyl group include glycidyl (meth) acrylate, ⁇ -ethylglycidyl (meth) acrylate, ⁇ -propylglycidyl (meth) acrylate, ⁇ -butylglycidyl (meth) Acrylate, 2-methylglycidyl (meth) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl (meth) acrylate , ⁇ -ethyl-6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether, m-viny
  • the (meth) acrylic resin synthesized from these monomers preferably contains a functional group capable of chain polymerization.
  • the chain polymerizable functional group is, for example, at least one selected from an acryloyl group and a methacryloyl group.
  • the functional group capable of chain polymerization is introduced into the (meth) acrylic resin by, for example, reacting the following compound (functional group-introducing compound) with the (meth) acrylic resin synthesized as described above. be able to.
  • functional group-introducing compounds include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- (bisacryloyloxymethyl) ethyl isocyanate; diisocyanate compound Or an acryloyl monoisocyanate compound obtained by reacting a polyisocyanate compound with hydroxyethyl (meth) acrylate or 4-hydroxybutylethyl (meth) acrylate; a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth) Examples include acryloyl monoisocyanate compounds obtained by reaction with acrylates. Among these, 2-methacryloyloxyethyl isocyanate is particularly preferable. These compounds can also be used individually by 1 type, and can also be used in combination of 2 or
  • the photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiation with active energy rays (at least one selected from ultraviolet rays, electron beams and visible rays). And radical photopolymerization initiators.
  • the chain-polymerizable active species means one that initiates a polymerization reaction by reacting with a chain-polymerizable functional group.
  • radical photopolymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1 -One, ⁇ -hydroxy ketones such as 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propan-1-one; 2-benzyl-2-dimethylamino-1- ⁇ -amino ketones such as (4-morpholinophenyl) -butan-1-one, 1,2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one; 1- [4 Oxime esters such as-(phenylthio) phenyl] -1,2-octadion-2- (benzoyl) oxime; bis (2,4,6-trimethyl) Phosphine oxides such as benzoyl) phenylphos
  • the content of the photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by mass and 0.3 to 10 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin content. It is preferably 0.5 to 5 parts by mass.
  • the content of the photopolymerization initiator is less than 0.1 parts by mass, the pressure-sensitive adhesive layer becomes insufficiently cured after irradiation with active energy rays, and pickup failure tends to occur.
  • the content of the photopolymerization initiator exceeds 30 parts by mass, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) tends to occur.
  • the crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and / or tackiness of the pressure-sensitive adhesive layer.
  • the crosslinking agent may be a compound having two or more functional groups that can react with at least one functional group selected from the hydroxyl group, glycidyl group, amino group, and the like of the (meth) acrylic resin in one molecule.
  • Examples of the bond formed by the reaction between the crosslinking agent and the (meth) acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.
  • a compound having two or more isocyanate groups in one molecule as a crosslinking agent.
  • a compound having two or more isocyanate groups in one molecule it can easily react with the hydroxyl group, glycidyl group, amino group and the like of the (meth) acrylic resin to form a strong crosslinked structure.
  • Examples of the compound having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4 , 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate Isocyanate compounds such as
  • a reaction product (isocyanate group-containing oligomer) of the above-described isocyanate compound and a polyhydric alcohol having two or more OH groups in one molecule may be employed.
  • polyhydric alcohols having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, Examples include 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.
  • a crosslinking agent a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer). It is further desirable that By using such an isocyanate group-containing oligomer as a cross-linking agent, the pressure-sensitive adhesive layer 3 forms a dense cross-linked structure, thereby sufficiently suppressing the pressure-sensitive adhesive from adhering to the adhesive layer 5 in the pickup process. .
  • the content of the crosslinking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and preferably 7 to 7 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin content. It is more preferable that it is 10 mass parts.
  • the content of the crosslinking agent is less than 3 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin, the formation of the crosslinked structure tends to be insufficient.
  • the interfacial adhesion with the agent layer 5 is not sufficiently lowered, and defects are likely to occur during pick-up.
  • the content of the cross-linking agent exceeds 30 parts by mass with respect to 100 parts by mass of the (meth) acrylic resin, the pressure-sensitive adhesive layer 3 tends to become excessively hard.
  • the semiconductor chip is easy to peel off.
  • the content of the crosslinking agent with respect to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20 mass%, and may be 3 to 17 mass% or 5 to 15 mass%.
  • the content of the crosslinking agent is 0.1% by mass or more, it is easy to form a region (first region R1) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, and on the other hand, at 15% by mass or less. It is easy to achieve excellent pick-up properties.
  • the thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions (temperature, tension, etc.) of the expanding process, and is, for example, 1 to 200 ⁇ m, preferably 5 to 50 ⁇ m, and preferably 10 to 20 ⁇ m. It is more preferable. If the thickness of the pressure-sensitive adhesive layer 3 is less than 1 ⁇ m, the tackiness tends to be insufficient, and if it exceeds 200 ⁇ m, the kerf width is narrow when expanded (the stress is relaxed when the pin is pushed up), and the pickup is likely to be insufficient. .
  • the pressure-sensitive adhesive layer 3 is formed on the base material layer 1.
  • a method for forming the pressure-sensitive adhesive layer 3 a known method can be employed.
  • a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish for forming the pressure-sensitive adhesive layer 3 is prepared and applied to the surface of the base material layer 1.
  • the pressure-sensitive adhesive layer 3 may be formed on a film that has been processed or subjected to a release treatment, and this may be transferred to the base material layer 1.
  • the varnish for forming the pressure-sensitive adhesive layer 3 is preferably prepared using an organic solvent that can dissolve a (meth) acrylic resin, a photopolymerization initiator, and a crosslinking agent and volatilizes by heating.
  • organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, isopropanol, butanol, ethylene glycol, propylene Alcohols such as glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone, etc
  • toluene for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol mono Ethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide are preferred.
  • These organic solvents may be used individually by 1 type, and may use 2 or more types together.
  • the solid content concentration of the varnish is usually preferably 10 to 60% by mass.
  • Base material layer As the base material layer 1, a known polymer sheet or film can be used, and there is no particular limitation as long as the expanding process can be performed under a low temperature condition. Specifically, as the base material layer 1, crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, ultra low density polyethylene, low density linear polyethylene, polybutene, polymethylpentene, etc.
  • polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate,
  • the base material layer 1 has a surface mainly composed of at least one resin selected from polyethylene, polypropylene, a polyethylene-polypropylene random copolymer, and a polyethylene-polypropylene block copolymer. Are preferably in contact with each other. These resins are good base materials from the viewpoints of properties such as Young's modulus, stress relaxation property, melting point, etc., as well as cost and recycling of used materials after use.
  • the base material layer 1 may be a single layer, but may have a multilayer structure in which layers made of different materials are laminated as necessary.
  • the surface of the base material layer 1 may be subjected to a surface roughening treatment such as a mat treatment or a corona treatment.
  • the adhesive composition that constitutes the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, it has excellent chip / substrate and chip / chip adhesive properties, and can provide electrode embedding properties and wire embedding properties, and can be bonded at a low temperature in the die bonding process. It is preferable because it can be cured in a short time and has excellent reliability after molding with a sealant.
  • epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, Bisphenol A novolac type epoxy resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products and halides thereof , Bifunctional epoxy resins such as hydrogenated products, and novolak type epoxy resins.
  • epoxy resins such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin. These can be used alone or in combination of two or more.
  • components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.
  • Examples of the epoxy resin curing agent include a phenol resin that can be obtained by reacting a phenol compound and a xylylene compound that is a divalent linking group in the presence of a non-catalyst or an acid catalyst.
  • Examples of the phenol compound used for the production of the phenol resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, pn-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, on-butylphenol, mn-butylphenol, pn-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-
  • phenol compounds may be used alone or in combination of two or more.
  • the following xylylene dihalide, xylylene diglycol and derivatives thereof can be used as the xylylene compound which is a divalent linking group used in the production of the phenol resin.
  • mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid and polyphosphoric acid
  • organic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluenesulfonic acid, methanesulfonic acid and ethanesulfonic acid Carboxylic acids
  • Super strong acids such as trifluoromethane sulfonic acid
  • Strong acidic ion exchange resins such as alkane sulfonic acid type ion exchange resin
  • Super strong acidic ion exchange such as perfluoroalkane sulfonic acid type ion exchange resin Resins (trade name: Nafion, Nafion, manufactured by Du Pont, “Nafion” is a registered trademark); natural and synthetic zeolites; practically at 50 to 250 ° C.
  • reaction is performed until the xylylene compound as a raw material disappears and the reaction composition becomes constant.
  • the reaction time depends on the raw materials and the reaction temperature, but is generally about 1 to 15 hours. In practice, it may be determined while tracking the reaction composition by GPC (gel permeation chromatography) or the like.
  • the epoxy group-containing acrylic copolymer is preferably a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by mass with respect to the obtained copolymer.
  • This amount is 0.5% by mass or more, high adhesive force can be easily obtained, and when it is 6% by mass or less, gelation can be suppressed.
  • the balance can be a mixture of alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, alkyl methacrylate, styrene, acrylonitrile and the like.
  • ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable.
  • the mixing ratio is preferably adjusted in consideration of the Tg of the copolymer.
  • Tg is less than ⁇ 10 ° C.
  • the tackiness of the adhesive layer 5 in the B-stage state tends to increase, and the handleability tends to deteriorate.
  • the upper limit of the glass transition point (Tg) of an epoxy-group-containing acrylic copolymer is 30 degreeC, for example.
  • the polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. Examples of commercially available epoxy group-containing acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation).
  • the weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and 500,000 to 2,000,000. Is more preferable. It can suppress that the filling property between a semiconductor chip and the board
  • the weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).
  • the adhesive layer 5 may further contain a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt, if necessary.
  • a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt.
  • Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.
  • the adhesive layer 5 may further contain an inorganic filler as necessary.
  • the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, Examples thereof include crystalline silica and amorphous silica. These may be used alone or in combination of two or more.
  • the thickness of the adhesive layer 5 is, for example, 1 to 300 ⁇ m, preferably 5 to 150 ⁇ m, and more preferably 10 to 100 ⁇ m. If the thickness of the adhesive layer 5 is less than 1 ⁇ m, the adhesiveness tends to be insufficient, while if it exceeds 300 ⁇ m, the splitting property and the pickup property at the time of expansion tend to be insufficient.
  • the aspect which does not contain a thermosetting resin may be sufficient as the adhesive bond layer 5.
  • the adhesive layer 5 includes a reactive group-containing (meth) acrylic copolymer
  • the adhesive layer 5 includes a reactive group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Any material can be used (see Example 4).
  • the production method of the film 10 is formed on the surface of the base material layer 1, the pressure-sensitive adhesive layer made of a pressure-sensitive adhesive composition whose adhesive strength is reduced by irradiating active energy rays, and the surface of the pressure-sensitive adhesive layer.
  • the step of producing a laminate including the adhesive layer 5 and the step of irradiating active energy rays to the region to be the first region R1 of the pressure-sensitive adhesive layer included in the laminate are included in this order.
  • the dose of the active energy ray to the area to be the first region R1, for example, a 10 ⁇ 1000mJ / cm 2 may be 100 ⁇ 700mJ / cm 2 or 200 ⁇ 500mJ / cm 2.
  • the manufacturing method of the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiating active energy rays on the surface of the base material layer 1, and a step of the pressure-sensitive adhesive layer.
  • 1 includes a step of irradiating an active energy ray to a region to be a region 3a and a step of laminating an adhesive layer 5 on the surface of the pressure-sensitive adhesive layer 3 after the irradiation of the active energy ray in this order. It's okay.
  • FIG. 4 is a cross-sectional view schematically showing the semiconductor device according to this embodiment.
  • the semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, S4 stacked on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, and four chips S1. , S2, S3, and S4, wires W1, W2, W3, and W4, and a sealing layer 50 that seals them.
  • the substrate 70 is, for example, an organic substrate, and may be a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 to 140 ⁇ m, and may be 80 to 100 ⁇ m.
  • the four chips S1, S2, S3, S4 are stacked via a cured product 5C of the adhesive piece 5P.
  • the shape of the chips S1, S2, S3, S4 in plan view is, for example, a square or a rectangle.
  • the area of the chips S1, S2, S3, S4 is 9 mm 2 or less, and may be 0.1-4 mm 2 or 0.1-2 mm 2 .
  • the length of one side of the chips S1, S2, S3, S4 is, for example, 3 mm or less, and may be 0.1 to 2.0 mm or 0.1 to 1.0 mm.
  • the thickness of the chips S1, S2, S3, S4 is, for example, 10 to 170 ⁇ m, and may be 25 to 100 ⁇ m.
  • the lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the thickness is the same.
  • the manufacturing method of the semiconductor device 100 includes a step of preparing the above-described film 10, a wafer W attached to the adhesive layer 5 of the film 10, and a dicing ring DR with respect to the second surface F ⁇ b> 2 of the pressure-sensitive adhesive layer 3.
  • a step of picking up from the first region 3a of the pressure-sensitive adhesive layer 3 and a step of mounting the chip S1 on the substrate 70 via the adhesive piece 5P are included.
  • the above-described film 10 is prepared. As shown in FIG. 5A and FIG. 5B, the film 10 is attached so that the adhesive layer 5 is in contact with one surface of the wafer W. Further, the dicing ring DR is attached to the second surface F2 of the pressure-sensitive adhesive layer 3.
  • the wafer W, the adhesive layer 5 and the pressure-sensitive adhesive layer 3 are diced. As a result, the wafer W is divided into chips S as shown in FIG.
  • the adhesive layer 5 is also separated into pieces 5P. Examples of the dicing method include a method using a dicing blade or a laser.
  • the wafer W may be thinned by grinding the wafer W prior to dicing.
  • the chips S are separated from each other by expanding the base material layer 1 under normal temperature or cooling conditions as shown in FIG. 5D without irradiating the adhesive layer 3 with active energy rays.
  • the adhesive piece 5P is peeled off from the pressure-sensitive adhesive layer 3 by being pushed up by the pin 42 while the DAF 8 is sucked by the suction collet 44 and picked up.
  • the first chip S ⁇ b> 1 (chip S) is pressure-bonded to a predetermined position of the substrate 70 through the adhesive piece 5 ⁇ / b> P.
  • the adhesive piece 5P is cured by heating. Thereby, the adhesive piece 5P is cured to become a cured product 5C.
  • the curing treatment of the adhesive piece 5P may be performed in a pressurized atmosphere from the viewpoint of reducing voids.
  • the second-stage chip S2 is mounted on the surface of the chip S1.
  • the structure 60 shown in FIG. 7 is manufactured by mounting the third-stage and fourth-stage chips S3 and S4. After the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by the wires W1, W2, W3, W4 (see FIG. 8), the semiconductor element and the wires are sealed by the sealing layer 50.
  • the semiconductor device 100 shown in FIG. 4 is completed.
  • the film 10 provided with the base material layer 1, the adhesive layer 3, and the adhesive bond layer 5 in this order was illustrated, the aspect which does not comprise the adhesive bond layer 5 may be sufficient.
  • the film 10 may further include a cover film (not shown) that covers the adhesive layer 5.
  • reaction solution was transferred to a pressure vessel having a capacity of 2000 ml equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, heated at 120 ° C. and 0.28 MPa for 4.5 hours, and then room temperature (25 ° C., and so on) ).
  • the solution containing the acrylic resin (A) obtained as described above was vacuum-dried at 60 ° C. overnight.
  • the solid content thus obtained was subjected to elemental analysis with a fully automatic elemental analyzer (trade name: varioEL, manufactured by Elemental Co., Ltd.), and the content of introduced 2-methacryloxyethyl isocyanate was calculated from the nitrogen content. 0.50 mmol / g.
  • the polystyrene conversion weight average molecular weight of (A) acrylic resin was calculated
  • a varnish for forming the pressure-sensitive adhesive layer was prepared by mixing the following components (see Table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.
  • a polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 ⁇ m) having a release treatment on one surface was prepared.
  • An adhesive layer-forming varnish was applied to the surface subjected to the mold release treatment using an applicator and then dried at 80 ° C. for 5 minutes. This obtained the laminated body (dicing film) which consists of a polyethylene terephthalate film and the 30-micrometer-thick adhesive layer formed on it.
  • a polyolefin film (width 450 mm, length 500 mm, thickness 80 ⁇ m) having a corona treatment on one surface was prepared.
  • the surface subjected to the corona treatment and the adhesive layer of the laminate were bonded together at room temperature.
  • the pressure-sensitive adhesive layer was transferred to a polyolefin film (cover film) by pressing with a rubber roll.
  • the dicing film with a cover film was obtained by leaving it to stand at room temperature for 3 days.
  • Silane coupling agent NUC A-189 ( (Product name) NUC Co., Ltd., ⁇ -mercaptopropyltrimethoxysilane
  • Silane coupling agent NUCA-1160 (trade name), Nihon Unicar Co., Ltd., ⁇ -ureidopropyltriethoxysilane
  • SC2050-HLG trade name
  • Admatex Corporation Silica, average particle diameter 0.500
  • a varnish for forming an adhesive layer was obtained through the steps of stirring and mixing and vacuum degassing.
  • Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight 800,000): 16 parts by mass Curing accelerator (Curesol 2PZ-CN (trade name), Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, “Curazole” is a registered trademark)
  • a polyethylene terephthalate film (thickness: 35 ⁇ m) having a release treatment on one surface was prepared.
  • a varnish for forming an adhesive layer was applied to the surface subjected to the release treatment using an applicator, and then heated and dried at 140 ° C. for 5 minutes.
  • This obtained the laminated body (die bonding film) which consists of a polyethylene terephthalate film (carrier film) and the 20-micrometer-thick adhesive layer (B stage state) formed on it.
  • a die bonding film composed of an adhesive layer and a carrier film was cut into a circle having a diameter of 335 mm together with the carrier film.
  • a dicing film from which the polyethylene terephthalate film had been peeled was attached to this at room temperature, and then allowed to stand at room temperature for 1 day. Thereafter, the dicing film was cut into a circle having a diameter of 370 mm.
  • the region corresponding to the wafer application position was irradiated with ultraviolet rays as follows.
  • ultraviolet rays were partially irradiated using a pulsed xenon lamp at an irradiation amount of 70 W and 150 mJ / cm 2 .
  • a black screen was used to irradiate ultraviolet light onto a portion having an inner diameter of 318 mm from the center of the film. In this way, a plurality of dicing / die bonding integrated films for use in various evaluation tests described later were obtained.
  • Example 2 The irradiation amount of ultraviolet rays instead of the 150 mJ / cm 2, other that was 300 mJ / cm 2 in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.
  • Example 3 The irradiation amount of ultraviolet rays instead of the 150 mJ / cm 2, other that was 500 mJ / cm 2 in the same manner as in Example 1 to obtain a plurality of dicing die bonding integrated film.
  • Example 4 A plurality of dicing die bondings were carried out in the same manner as in Example 1 except that a die bonding film having an adhesive layer B formed as follows was used instead of the one having the adhesive layer A. An integral film was obtained.
  • Die Bonding Film Adhesive Layer B
  • cyclohexanone solvent
  • Filler (“SC2050-HLG (trade name), manufactured by Admatechs Co., Ltd., silica, average particle size 0.500 ⁇ m): 50 parts by mass
  • stirring was performed.
  • a varnish for forming an adhesive layer was obtained through the steps of mixing and vacuum degassing.
  • Epoxy group-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corp., weight average molecular weight 800,000): 100 parts by mass Curing accelerator (Curesol 2PZ-CN (trade name), 0.1 part by mass of Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole, “Cureazole” is a registered trademark)
  • Example 5 Instead of the raw material monomer composition shown in Production Example 1 in Table 1, a raw material monomer composition shown in Production Example 2 was used, and a solution of (A) acrylic resin according to Production Example 2 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as Example 2 except that this solution was used.
  • Example 6 The amount of the crosslinking agent in the pressure-sensitive adhesive layer is 4.0 parts by mass instead of 8.0 parts by mass, and the amount of UV irradiation is 500 mJ / cm 2 instead of 300 mJ / cm 2. In the same manner as in Example 5, a plurality of dicing / die bonding integrated films were obtained.
  • Example 7 Instead of the raw material monomer composition shown in Production Example 1 in Table 1, a raw material monomer composition shown in Production Example 3 was used, and a solution of (A) an acrylic resin according to Production Example 3 produced by the same method as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as Example 2 except that this solution was used.
  • Example 8> Instead of the raw material monomer composition shown in Production Example 1 in Table 1, the raw material monomer composition shown in Production Example 4 was used, and a solution of (A) an acrylic resin according to Production Example 4 produced in the same manner as Production Example 1 was obtained. A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 3 except that this solution was used.
  • Example 1 A plurality of dicing / die bonding integrated films were obtained in the same manner as in Example 1 except that the amount of the crosslinking agent in the pressure-sensitive adhesive layer was changed to 15.0 parts by mass instead of 8.0 parts by mass.
  • the adhesive strength of the adhesive layer (ultraviolet non-irradiated region) to the stainless steel substrate was evaluated by measuring 90 ° peel strength. That is, a measurement sample having a width of 25 mm and a length of 100 mm was cut out from the dicing / die bonding integrated film. The measurement sample was a laminate of an adhesive layer (non-irradiated region) and an adhesive layer. After the surface of the adhesive layer side of the sample was attached to a stainless steel substrate (SUS430BA), the peel strength of the adhesive layer (ultraviolet non-irradiated area) to the stainless steel substrate using an autograph “AGS-1000” manufactured by Shimadzu Corporation was measured. The measurement conditions were a peeling angle of 90 ° and a peeling speed of 50 mm / min.
  • the present invention can be applied to a process of dicing a wafer into a large number of small chips, can sufficiently suppress DAF jump in the dicing process, and is equipped with a pressure-sensitive adhesive layer having excellent pickup properties.
  • An integral film is provided.
  • the manufacturing method of a dicing die-bonding integrated film and the manufacturing method of a semiconductor device using the said film are provided.

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PCT/JP2018/019179 2018-05-17 2018-05-17 ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法 WO2019220599A1 (ja)

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PCT/JP2019/019574 WO2019221246A1 (ja) 2018-05-17 2019-05-16 ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法
KR1020207033514A KR102278942B1 (ko) 2018-05-17 2019-05-16 다이싱·다이본딩 일체형 필름과 그 제조 방법, 및 반도체 장치의 제조 방법
SG11202011259WA SG11202011259WA (en) 2018-05-17 2019-05-16 Dicing/die-bonding double functioning film and method for producing same, and method for manufacturing semiconductor device
JP2020519925A JP6789500B2 (ja) 2018-05-17 2019-05-16 ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法
CN201980032401.6A CN112219264B (zh) 2018-05-17 2019-05-16 切晶粘晶一体型膜及其制造方法、以及半导体装置的制造方法
TW108117038A TWI778263B (zh) 2018-05-17 2019-05-17 切晶黏晶一體型膜及其製造方法以及半導體裝置的製造方法

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