JP6835296B1 - ピックアップ性の評価方法、ダイシング・ダイボンディング一体型フィルム、ダイシング・ダイボンディング一体型フィルムの評価方法及び選別方法、並びに半導体装置の製造方法 - Google Patents
ピックアップ性の評価方法、ダイシング・ダイボンディング一体型フィルム、ダイシング・ダイボンディング一体型フィルムの評価方法及び選別方法、並びに半導体装置の製造方法 Download PDFInfo
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
(A)基材層と、基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、粘着剤層の第2の面の中央部を覆うように設けられた接着剤層とを備える評価対象のダイシング・ダイボンディング一体型フィルムを準備する工程
(B)温度23℃において剥離角度30°及び剥離速度60mm/分の条件で、接着剤層からの粘着剤層の剥離強度を測定する第1測定工程
(C)ダイシング・ダイボンディング一体型フィルムの接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、粘着剤層の第2の面に対してダイシングリングを貼る工程
(D)シリコンウェハ及び接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の接着剤片付きチップを得る工程
(E)温度23℃において基材層側から接着剤片付きチップの中央部を速度60mm/分で押し込み、接着剤片付きチップのエッジが粘着剤層から剥離するときのエッジ剥離強度を測定する第2測定工程
(i)基材層と、基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、粘着剤層の第2の面の中央部を覆うように設けられた接着剤層とを備える評価対象のダイシング・ダイボンディング一体型フィルムを準備する工程
(ii)剥離角度30°の条件で接着剤層からの粘着剤層の剥離強度を測定する第1測定工程
(iii)ダイシング・ダイボンディング一体型フィルムの接着剤層に対して厚さ10〜100μmのウェハを貼るとともに、粘着剤層の第2の面に対してダイシングリングを貼る工程
(iv)ウェハ及び接着剤層を、面積9mm2以下の接着剤片付きチップに個片化する工程
(v)基材層側から接着剤片付きチップの中央部を押し込み、接着剤片付きチップのエッジが粘着剤層から剥離するときのエッジ剥離強度を測定する第2測定工程
<エッジ剥離強度の測定>
・接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、粘着剤層の第2の面に対してダイシングリングを貼る工程
・シリコンウェハ及び接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の接着剤片付きチップを得る工程
・温度23℃において基材層側から接着剤片付きチップの中央部を速度60mm/分で押し込み、接着剤片付きチップのエッジが粘着剤層から剥離するときのエッジ剥離強度を測定する工程
・接着剤層を比較的高粘度化(高弾性化)したり、薄膜化(例えば60μm以下)することによって、ブレードダイシング時の接着剤層の切削性を高める。
・粘着剤層の成分(例えば、架橋剤又は光重合開始剤)の量を変更することによって粘着剤層を比較的高弾性化したり、粘着力を調整する。
・基材層の破断伸度を小さくする。
・ブレードダイシング時に基材層まで切り込まないように粘着剤層を厚膜化(例えば30μm以上)する。
<エッジ剥離強度の測定>
・接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、粘着剤層の第2の面に対してダイシングリングを貼る工程
・シリコンウェハ及び接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の接着剤片付きチップを得る工程
・温度23℃において基材層側から接着剤片付きチップの中央部を速度60mm/分で押し込み、接着剤片付きチップのエッジが粘着剤層から剥離するときのエッジ剥離強度を測定する工程
図1(a)は、本実施形態に係るダイシング・ダイボンディング一体型フィルムを示す平面図であり、図1(b)は、図1のB−B線に沿った模式断面図である。ダイシング・ダイボンディング一体型フィルム10(以下、場合により、単に「フィルム10」と言う。)は、ウェハWを面積9mm2以下の複数のチップに個片化するダイシング工程及びその後のピックアップ工程を含む半導体装置の製造プロセスに適用されるものである(図8(c)及び図8(d)参照)。
<エッジ剥離強度の測定>
・接着剤層5に対して厚さ50μmのシリコンウェハWsを貼るとともに、粘着剤層3の第2の面F2に対してダイシングリングDRを貼る工程(図2(a)参照)
・シリコンウェハWs及び接着剤層5を複数の接着剤片付きチップTa(以下、場合により単に「チップTa」と言う。)に個片化する工程(図2(b)参照)
・温度23℃において基材層1側からチップTaの中央部を速度60mm/分で押し込み(図2(c)参照)、チップTaのエッジが粘着剤層3から剥離するときのエッジ剥離強度を測定する工程
<ダイシング条件>
・ダイサー:DFD6361(株式会社ディスコ製)
・ブレード:ZH05−SD4000−N1−70−BB(株式会社ディスコ製)
・ブレード回転数:40000rpm
・ダイシング速度:30mm/秒
・ブレードハイト:90μm
・粘着剤層3の表面からの切り込み深さ:20μm
・チップTaの平面視での形状:2mm×2mmの正方形
<測定条件>
・測定装置:小型卓上試験機EZ−SX(株式会社島津製作所製)
・ロードセル:50N
・押し込み冶具:ZTSシリーズ付属アタッチメント(形状:円錐型、株式会社イマダ製)
・押し込み速度:60mm/分
・温度:23℃
・湿度:45±10%
基材層1としては、既知のポリマーシート又はフィルムを用いることができ、低温条件下においても、エキスパンド工程を実施可能なものであれば、特に制限はない。具体的には、基材層1を構成するポリマーとして、結晶性ポリプロピレン、非晶性ポリプロピレン、高密度ポリエチレン、中密度ポリエチレン、低密度ポリエチレン、超低密度ポリエチレン、低密度直鎖ポリエチレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン−ブテン共重合体、エチレン−ヘキセン共重合体、ポリウレタン、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリカーボネート、ポリイミド、ポリエーテルエーテルケトン、ポリイミド、ポリエーテルイミド、ポリアミド、全芳香族ポリアミド、ポリフェニルスルフイド、アラミド(紙)、ガラス、ガラスクロス、フッ素樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、セルロース系樹脂、シリコーン樹脂、又は、これらに可塑剤を混合した混合物、あるいは、電子線照射により架橋を施した硬化物が挙げられる。
粘着剤層3は、接着剤層5におけるシリコンウェハWsの貼付け位置に対応する領域Rwを少なくとも含む第1の領域3aと、第1の領域3aを囲むように位置する第2の領域3bとを有する。図1(a)及び図1(b)における破線は第1の領域3aと第2の領域3bの境界を示す。第1の領域3a及び第2の領域3bは、活性エネルギー線の照射前において同一の組成物からなる。第1の領域3aは、紫外線等の活性エネルギー線が照射されることによって、第2の領域3bと比較して粘着力が低下した状態の領域である。第2の領域3bはダイシングリングDRが貼り付けられる領域である(図2(a)参照)。第2の領域3bは活性エネルギー線が照射されていない領域であり、ダイシングリングDRに対する高い粘着力を有する。
粘着剤組成物は、連鎖重合可能な官能基を有する(メタ)アクリル系樹脂を含み、官能基がアクリロイル基及びメタクリロイル基から選ばれる少なくとも1種であることが好ましい。活性エネルギー線照射前の粘着剤層における上記官能基の含有量は、例えば、0.1〜1.2mmol/gであり、0.3〜1.0mmol/g又は0.5〜0.8mmol/gであってもよい。上記官能基の含有量が0.1mmol/g以上であることで、活性エネルギー線の照射によって粘着力が適度に低下した領域(第1の領域3a)を形成しやすく、他方、1.2mmol/g以下であることで、優れたピックアップ性を達成しやすい。
光重合開始剤としては、活性エネルギー線(紫外線、電子線及び可視光線から選ばれる少なくとも1種)を照射することで連鎖重合可能な活性種を発生するものであれば、特に制限はなく、例えば、光ラジカル重合開始剤が挙げられる。ここで連鎖重合可能な活性種とは、連鎖重合可能な官能基と反応することで重合反応が開始されるものを意味する。
架橋剤は、例えば、粘着剤層の弾性率及び/又は粘着性の制御を目的に用いられる。架橋剤は、上記(メタ)アクリル系樹脂が有する水酸基、グリシジル基及びアミノ基等から選ばれる少なくとも1種の官能基と反応し得る官能基を一分子中に2つ以上有する化合物であればよい。架橋剤と(メタ)アクリル系樹脂との反応によって形成される結合としては、エステル結合、エーテル結合、アミド結合、イミド結合、ウレタン結合、ウレア結合等が挙げられる。
接着剤層5には、既知のダイボンディングフィルムを構成する接着剤組成物を適用できる。具体的には、接着剤層5を構成する接着剤組成物は、エポキシ基含有アクリル共重合体、エポキシ樹脂及びエポキシ樹脂硬化剤を含有することが好ましい。これらの成分を含む接着剤層5によれば、チップ/基板間、チップ/チップ間の接着性に優れ、また電極埋め込み性及びワイヤ埋め込み性等も付与可能で、かつダイボンディング工程では低温で接着でき、短時間で優れた硬化が得られる、封止剤でモールド後は優れた信頼性を有する等の特徴があり好ましい。
フィルム10の製造方法は、基材層1の表面上に、活性エネルギー線が照射されることによって粘着力が低下する粘着剤組成物からなる粘着剤層と、粘着剤層の表面上に形成された接着剤層5とを含む積層体を作製する工程と、積層体に含まれる粘着剤層の第1の領域3aとなる領域に活性エネルギー線を照射する工程とをこの順序で含む。第1の領域3aとなる領域に対する活性エネルギー線の照射量は、例えば、10〜1000mJ/cm2であり、100〜700mJ/cm2又は200〜500mJ/cm2であってもよい。
図7は本実施形態に係る半導体装置を模式的に示す断面図である。この図に示す半導体装置100は、基板70と、基板70の表面上に積層された四つのチップT1,T2,T3,T4と、基板70の表面上の電極(不図示)と四つのチップT1,T2,T3,T4とを電気的に接続するワイヤW1,W2,W3,W4と、これらを覆っている封止層50とを備える。
スリーワンモータ、撹拌翼、窒素導入管が備え付けられた容量2000mlのフラスコに以下の成分を入れた。
・酢酸エチル(溶剤):635g
・2−エチルヘキシルアクリレート:395g
・2−ヒドロキシエチルアクリレート:100g
・メタクリル酸:5g
・アゾビスイソブチロニトリル:0.08g
表1の製造例1に示す原料モノマー組成の代わりに、製造例2〜4に示す原料モノマー組成としたことの他は、製造例1と同様にして製造例2〜4に係る(A)アクリル樹脂の溶液をそれぞれ得た。製造例2〜4に係る(A)アクリル樹脂についての測定結果を表1に示す。
[ダイシングフィルム(粘着剤層)の作製]
以下の成分を混合することで、粘着剤層形成用のワニスを調製した(表2参照)。酢酸エチル(溶剤)の量は、ワニスの総固形分含有量が25質量%となるように調整した。
・(A)アクリル樹脂溶液(製造例1):100g(固形分)
・(B)光重合開始剤(2−ヒドロキシ−1−{4−[4−(2−ヒドロキシ−2−メチル−プロピオニル)−ベンジル]−フェニル}−2−メチル−プロパン−1−オン(チバスペシャリティケミカルズ株式会社製、イルガキュア127、「イルガキュア」は登録商標):1.0g
・(C)架橋剤(多官能イソシアネート、日本ポリウレタン工業株式会社製、コロネートL、固形分:75%):8.0g(固形分)
・酢酸エチル(溶剤)
まず、以下の組成物にシクロヘキサノン(溶剤)を加えて攪拌混合した後、更にビーズミルを用いて90分混練した。
・エポキシ樹脂(YDCN−700−10(商品名)、新日鉄住金化学株式会社製クレゾールノボラック型エポキシ樹脂、エポキシ当量210、分子量1200、軟化点80℃):14質量部
・フェノール樹脂(ミレックスXLC−LL(商品名)、三井化学株式会社製、フェノール樹脂、水酸基当量175、吸水率1.8%、350℃における加熱重量減少率4%):23質量部
・シランカップリング剤(NUC A−189(商品名)株式会社NUC製、γ−メルカプトプロピルトリメトキシシラン):0.2質量部
・シランカップリング剤(NUCA−1160(商品名)、日本ユニカー株式会社製、γ−ウレイドプロピルトリエトキシシラン):0.1質量部
・フィラー(「SC2050−HLG(商品名)、アドマテックス株式会社製、シリカ、平均粒径0.500μm):32質量部
・エポキシ基含有アクリル共重合体(HTR−860P−3(商品名)、ナガセケムテックス株式会社製、重量平均分子量80万):16質量部
・硬化促進剤(キュアゾール2PZ−CN(商品名)、四国化成工業株式会社製、1−シアノエチル−2−フェニルイミダゾール、「キュアゾール」は登録商標)0.0.1質量部
接着剤層とキャリアフィルムとからなるダイボンディングフィルムを、キャリアフィルムごと直径335mmの円形にカットした。これにポリエチレンテレフタレートフィルムを剥離したダイシングフィルムを室温で貼り付け後、室温で1日放置した。その後、直径370mmの円形にダイシングフィルムをカットした。このようにして得たダイシング・ダイボンディング一体型フィルムの接着剤層におけるウェハの貼付け位置に対応する領域(粘着剤層の第1の領域)に以下のようにして紫外線を照射した。すなわち、パルスドキセノンランプを用いて70W、300mJ/cm2の照射量で部分的に紫外線を照射した。なお、暗幕を用いてフィルムの中心から内径318mmの部分に紫外線を照射した。このようにして、後述の種々の評価試験に供するための複数のダイシング・ダイボンディング一体型フィルムを得た。
ダイシングフィルムを作製する際、「イルガキュア127」の代わりに、1−ヒドロキシ−シクロヘキシル−フェニル−ケトン、チバスペシャリティケミカルズ株式会社製、イルガキュア184、「イルガキュア」は登録商標)を使用したこと、及び、紫外線の照射量を300mJ/cm2とする代わりに、200mJ/cm2としたことの他は、実施例1と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
<実施例3>
紫外線の照射量を200mJ/cm2とする代わりに、250mJ/cm2としたことの他は実施例2と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
紫外線の照射量を200mJ/cm2とする代わりに、300mJ/cm2としたことの他は実施例2と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
ダイボンディングフィルムとして、接着剤層Aを有するものの代わりに、以下のようにして形成した接着剤層Bを有するものを使用したことの他は実施例4と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
[ダイボンディングフィルム(接着剤層B)の作製]
まず、以下の成分にシクロヘキサノン(溶剤)を加えて攪拌混合した後、更にビーズミルを用いて90分混練した。
・フィラー(「SC2050−HLG(商品名)、アドマテックス株式会社製、シリカ、平均粒径0.500μm):50質量部
上記のようにして得た組成物に以下の成分を加えた後、攪拌混合及び真空脱気の工程を経て接着剤層形成用のワニスを得た。
・エポキシ基含有アクリル共重合体(HTR−860P−3(商品名)、ナガセケムテックス株式会社製、重量平均分子量80万):100質量部
・硬化促進剤(キュアゾール2PZ−CN(商品名)、四国化成工業株式会社製、1−シアノエチル−2−フェニルイミダゾール、「キュアゾール」は登録商標):0.1質量部
ダイシングフィルムを作製する際、製造例1に係るアクリル樹脂を使用する代わりに製造例2に係るアクリル樹脂を使用したこと、及び、架橋剤の量を8.0質量部とする代わりに6.0質量部としたことの他は実施例1と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
ダイシングフィルムを作製する際、架橋剤の量を8.0質量部とする代わりに6.0質量部としたことの他は実施例1と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
ダイシングフィルムを作製する際、製造例2に係るアクリル樹脂を使用する代わりに製造例3に係るアクリル樹脂を使用したことの他は比較例1と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
ダイシングフィルムを作製する際、製造例2に係るアクリル樹脂を使用する代わりに製造例4に係るアクリル樹脂を使用したこと、及び、紫外線を照射しなかったことの他は比較例1と同様にして、複数のダイシング・ダイボンディング一体型フィルムを得た。
(1)接着剤層に対する粘着剤層の粘着力(30°ピール強度)の測定
接着剤層に対する粘着剤層の粘着力を30°ピール強度を測定することによって評価した。すなわち、ダイシング・ダイボンディング一体型フィルムから幅25mm及び長さ100mmの測定試料を切り出した。測定試料は、粘着剤層と、接着剤層の積層体とした。引張試験機を用いて接着剤層に対する粘着剤層のピール強度を測定した。測定条件は、剥離角度30°、引張速度60mm/分とした。なお、試料の保存及びピール強度の測定は、温度23℃、相対湿度40%の環境下で行った。実施例1〜5及び比較例1〜3については、粘着剤層における紫外線照射領域の粘着力を評価対象とし、比較例4については粘着剤層の粘着力を評価対象とした。
シリコンウェハ(直径:12インチ、厚さ:50μm)及びダイシングリングにダイシング・ダイボンディング一体型フィルムを以下条件で貼り付けた。シリコンウェハ及びダイシングリングを貼り付けた後のダイシング・ダイボンディング一体型フィルムのMD方向の伸びは、1.0〜1.3%程度であった。
<貼付条件>
・貼付装置:DFM2800(株式会社ディスコ製)
・貼付温度:70℃
・貼付速度:10mm/s
・貼付テンションレベル:レベル6
<ダイシング条件>
・ダイサー:DFD6361(株式会社ディスコ製)
・ブレード:ZH05−SD4000−N1−70−BB(株式会社ディスコ製)
・ブレード回転数:40000rpm
・ダイシング速度:30mm/秒
・ブレードハイト:90μm
・粘着剤層の表面からの切り込み深さ:20μm
・ダイシング時の水量
ブレードクーラー:1.5L/分
シャワー:1.0L/分
スプレー:1.0L/分
<測定条件>
・測定装置:小型卓上試験機EZ−SX(株式会社島津製作所製)
・ロードセル:50N
・押し込み冶具:ZTSシリーズ付属アタッチメント(形状:円錐型、株式会社イマダ製)
・押し込み速度:60mm/分
・温度:23℃
・湿度:45±10%
以下の評価基準によりダイシング性を評価した。表2,3に結果を示す。
<チップ飛び>
ダイシング後にチップ飛びが全く発生しなかったものを「A」、チップ飛びには至らなかったが、接着剤層と粘着剤層との間に切削水の浸入がわずかにでも認められたものを「B」、チップ飛びが一回でも発生したものを「C」とした。
<クラック>
ダイシング後のチップの切削断面を顕微鏡にて確認し、チップの欠けが生じているか否かを評価した。10個のチップの切削断面を観察し、まったく欠けが認められなかった試料を「A」と評価し、わずかでも欠けが認められる試料を「B」と評価した。
上記のエッジ剥離強度の測定後、以下の条件で100個の接着剤片付きチップをピックアップした。
<ピックアップ条件>
・ダイボンダ装置:DB800−HSD(株式会社日立ハイテクノロジーズ製)
・突上げピン:EJECTOR NEEDLE SEN2−83−05(直径:0.7mm、先端形状:半径350μmの半球、マイクロメカニクス社製)
・突き上げ高さ:150μm
・突き上げ速度:1mm/秒、
なお、突上げピンは、チップの中央部に1本配置した。ピックアップの成功率が100%であったものを「A」、80%以上100%未満であったものを「B」、60%以上80%未満であったものを「C」、60%未満であったものを「D」とした。表2,3に結果を示す。
Claims (8)
- (A)基材層と、前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、前記粘着剤層の前記第2の面の中央部を覆うように設けられた接着剤層とを備える評価対象のダイシング・ダイボンディング一体型フィルムを準備する工程と、
(B)温度23℃において剥離角度30°及び剥離速度60mm/分の条件で、前記接着剤層からの前記粘着剤層の剥離強度を測定する第1測定工程と、
(C)前記ダイシング・ダイボンディング一体型フィルムの前記接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程と、
(D)前記シリコンウェハ及び前記接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の前記接着剤片付きチップを得る工程と、
(E)温度23℃において前記基材層側から前記接着剤片付きチップの中央部を速度60mm/分で押し込み、前記接着剤片付きチップのエッジが前記粘着剤層から剥離するときのエッジ剥離強度を測定する第2測定工程と、
を含み、
前記第1測定工程で測定される前記剥離強度が3.0N/25mm以下であり且つ前記第2測定工程で測定される前記エッジ剥離強度が1.2N以下であるとき、前記ダイシング・ダイボンディング一体型フィルムは良好なピックアップ性を有すると判定する、ダイシング・ダイボンディング一体型フィルムの評価方法。 - (i)基材層と、前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、前記粘着剤層の前記第2の面の中央部を覆うように設けられた接着剤層とを備える評価対象のダイシング・ダイボンディング一体型フィルムを準備する工程と、
(ii)剥離角度30°の条件で前記接着剤層からの前記粘着剤層の剥離強度を測定する第1測定工程と、
(iii)前記ダイシング・ダイボンディング一体型フィルムの前記接着剤層に対して厚さ10〜100μmのウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程と、
(iv)前記ウェハ及び前記接着剤層を、面積9mm2以下の接着剤片付きチップに個片化する工程と、
(v)前記基材層側から前記接着剤片付きチップの中央部を押し込み、前記接着剤片付きチップのエッジが前記粘着剤層から剥離するときのエッジ剥離強度を測定する第2測定工程と、
を含む、ピックアップ性の評価方法。 - 基材層と、
前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、
前記粘着剤層の前記第2の面の中央部を覆うように設けられた接着剤層と、
を備え、
温度23℃において剥離角度30°及び剥離速度60mm/分の条件で測定される、前記接着剤層からの前記粘着剤層の剥離強度が3.0N/25mm以下であり且つ以下の工程を経て測定されるエッジ剥離強度が1.2N以下である、ダイシング・ダイボンディング一体型フィルム。
<エッジ剥離強度の測定>
・前記接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程
・前記シリコンウェハ及び前記接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の前記接着剤片付きチップを得る工程
・温度23℃において前記基材層側から前記接着剤片付きチップの中央部を速度60mm/分で押し込み、前記接着剤片付きチップのエッジが前記粘着剤層から剥離するときのエッジ剥離強度を測定する工程 - 面積9mm2以下の複数の接着剤片付きチップにウェハ及び接着剤層を個片化する工程を含む半導体装置製造プロセスに適用される、請求項3に記載のダイシング・ダイボンディング一体型フィルム。
- 前記個片化する工程において、ブレードダイシングによって前記複数の接着剤片付きチップが得られる、請求項4に記載のダイシング・ダイボンディング一体型フィルム。
- 請求項3〜5のいずれか一項に記載のダイシング・ダイボンディング一体型フィルムを準備する工程と、
前記ダイシング・ダイボンディング一体型フィルムの前記接着剤層に対してウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程と、
前記ウェハ及び前記接着剤層を面積9mm2以下の複数の接着剤片付きチップに個片化する工程と、
前記接着剤片付きチップを前記粘着剤層からピックアップする工程と、
前記接着剤片付きチップを、基板又は他のチップ上にマウントする工程と、
を含む、半導体装置の製造方法。 - 基材層と、前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、前記粘着剤層の前記第2の面の中央部を覆うように設けられた接着剤層とをそれぞれ備える二種以上のダイシング・ダイボンディング一体型フィルムを準備する工程と、
前記二種以上のダイシング・ダイボンディング一体型フィルムの前記接着剤層からの前記粘着剤層の剥離強度、及び以下の工程を経て測定されるエッジ剥離強度を比較する工程と、
を含む、ダイシング・ダイボンディング一体型フィルムの選別方法。
<エッジ剥離強度の測定>
・前記接着剤層に対して厚さ10〜100μmのウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程
・前記ウェハ及び前記接着剤層を、面積9mm 2 以下の接着剤片付きチップに個片化する工程
・前記基材層側から前記接着剤片付きチップの中央部を押し込み、前記接着剤片付きチップのエッジが前記粘着剤層から剥離するときのエッジ剥離強度を測定する工程 - 基材層と、前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、前記粘着剤層の前記第2の面の中央部を覆うように設けられた接着剤層とをそれぞれ備え、温度23℃において剥離角度30°及び剥離速度60mm/分の条件で測定される、前記接着剤層からの前記粘着剤層の剥離強度が3.0N/25mm以下である、複数のダイシング・ダイボンディング一体型フィルムを準備する工程と、
前記複数のダイシング・ダイボンディング一体型フィルムについて、以下の工程を経て測定されるエッジ剥離強度が1.2N以下であるか否かを検査する工程と、
を含むダイシング・ダイボンディング一体型フィルムの選別方法。
<エッジ剥離強度の測定>
・前記接着剤層に対して厚さ50μmのシリコンウェハを貼るとともに、前記粘着剤層の前記第2の面に対してダイシングリングを貼る工程
・前記シリコンウェハ及び前記接着剤層を複数の接着剤片付きチップに個片化し、辺の長さが2mmの正方形の前記接着剤片付きチップを得る工程
・温度23℃において前記基材層側から前記接着剤片付きチップの中央部を速度60mm/分で押し込み、前記接着剤片付きチップのエッジが前記粘着剤層から剥離するときのエッジ剥離強度を測定する工程
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KR102412771B1 (ko) | 2022-06-27 |
TW202104870A (zh) | 2021-02-01 |
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