CN113348533A - 拾取性的评价方法、切晶粘晶一体型膜、切晶粘晶一体型膜的评价方法及分选方法、以及半导体装置的制造方法 - Google Patents
拾取性的评价方法、切晶粘晶一体型膜、切晶粘晶一体型膜的评价方法及分选方法、以及半导体装置的制造方法 Download PDFInfo
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Images
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
本公开所涉及的拾取性的评价方法包括:准备作为评价对象的切晶粘晶一体型膜的工序,所述切晶粘晶一体型膜依次具备基材层、压敏胶黏剂层及胶黏剂层;在剥离角度30°的条件下测定压敏胶黏剂层相对于胶黏剂层的胶接力的第一工序;对切晶粘晶一体型膜的胶黏剂层粘贴厚度10~100μm的晶片的工序;将晶片及胶黏剂层单片化成面积为9mm2以下的带有胶黏剂片的芯片的工序;及从基材层侧压入带有胶黏剂片的芯片的中央部,并测定带有胶黏剂片的芯片的边缘从压敏胶黏剂层剥离时的边缘剥离强度的第二测定工序。
Description
技术领域
本公开涉及一种拾取性的评价方法、切晶粘晶一体型膜、切晶粘晶一体型膜的评价方法及分选方法、以及半导体装置的制造方法。
背景技术
半导体装置经过以下的工序而制造。首先,在将切晶用压敏胶黏剂膜(pressure-sensitive adhesive film)贴附于晶片的状态下实施切晶工序。之后,实施扩张(expand)工序、拾取(pickup)工序、安装(mounting)工序及粘晶(die bonding)工序等。
在半导体装置的制造工艺中,使用被称为切晶粘晶一体型膜的膜(参考专利文献1、专利文献2)。该膜具有依次层叠有基材层、压敏胶黏剂(pressure-sensitive adhesive)层及胶黏剂(adhesive)层的结构,例如以如下方式使用。首先,在对晶片贴附胶黏剂层侧的面并且利用切晶环(dicing ring)将晶片固定的状态下,对晶片进行切晶。由此,将晶片单片化成多个芯片(chip)。接着,通过对压敏胶黏剂层照射紫外线而减弱压敏胶黏剂层相对于胶黏剂层的胶接力(adhesive force)后,将芯片连同胶黏剂层单片化而成的胶黏剂片从压敏胶黏剂层一并拾取。之后,经过经由胶黏剂片而将芯片安装于基板等的工序来制造半导体装置。以下,根据情况将芯片与胶黏剂片的层叠体称为“带有胶黏剂片的芯片”。
将如上所述般通过紫外线的照射而胶接力变弱的压敏胶黏剂层(切晶膜)称为紫外线(ultraviolet,UV)固化型。相对于此,将在半导体装置的制造工艺中不照射紫外线而胶接力保持固定的压敏胶黏剂层称为感压型。具备感压型的压敏胶黏剂层的切晶粘晶一体型膜具有如下优点:无需由用户(主要为半导体装置制造商)实施照射紫外线的工序,而且不需要用于该工序的设备。专利文献3公开一种切晶粘晶膜,其从压敏胶黏剂层含有通过紫外线而固化的成分的方面考虑可称为UV固化型,另一方面,从仅对压敏胶黏剂层的规定部分预先照射紫外线,用户无需在半导体装置的制造工艺中照射紫外线的方面考虑还可称为感压型。
现有技术文献
专利文献
专利文献1:日本特开2012-069586号公报
专利文献2:日本特开2014-135469号公报
专利文献3:日本专利第4443962号公报
发明内容
发明要解决的课题
关于切晶粘晶一体型膜的压敏胶黏剂层要求在切晶工序中对胶黏剂层及切晶的胶接力高。若压敏胶黏剂层的胶接力不够充分,则随着切晶刀片的高速旋转而在胶黏剂层与压敏胶黏剂层之间产生剥离而产生带有胶黏剂片的芯片飞散的现象(以下,将其称为“DAF飞散”。DAF为die attach film(芯片粘附膜。),或者因切割水的水流而产生切晶环从压敏胶黏剂层剥离的现象(以下,将该现象称为“环剥离”。)。另一方面,在拾取工序中,从优异的拾取性的观点考虑,要求压敏胶黏剂层相对于胶黏剂层的胶接力降低某种程度。若压敏胶黏剂层的胶接力过强,则带有胶黏剂片的芯片不从压敏胶黏剂层剥离而产生拾取不良的现象,或者产生芯片破裂而成品率降低。
然而,本发明人等发现通过切晶将晶片单片化成小芯片(例如,俯视观察时的面积为9mm2以下)时,在之后的拾取工序中,示出从以往的见解而言特异的拾取行为。即,产生如下现象:若相对较大的尺寸(例如,纵8mm×横6mm)的芯片为拾取对象,则即使将压敏胶黏剂层的胶接力降低到能够实现优异的拾取性的程度,当拾取对象为小芯片时拾取性也不够充分。本发明人等对其主要原因进行了深入研究的结果,得到了如下见解:当为小芯片时,芯片的边缘从压敏胶黏剂层的剥离(以下,称为“边缘剥离”。)为拾取性的主导因素。
根据本发明人等的研究,推测当为尺寸相对较大的芯片时,与芯片的边缘相比,芯片表面与压敏胶黏剂层的界面的剥离(以下,称为“界面剥离”。)为拾取性的主要因素。即,当通过利用上推夹具的销从下方对芯片的中心部进行上推而拾取大芯片(例如,俯视时面积大于20mm2)时,伴随销的上升,虽然压敏胶黏剂层与胶黏剂片的界面剥离从芯片的边缘向中央部分进展,但若压敏胶黏剂层相对于胶黏剂片的胶接力过大,则界面剥离无法追上销的上升,从而芯片中产生裂纹,或者容易产生拾取失误。即,本发明人等发现,大芯片的拾取性主要受压敏胶黏剂层与胶黏剂片的界面剥离支配,应将压敏胶黏剂层的胶接力尽量设定为小的值(例如,1.2N/25mm)。
相对于此,本发明人等发现,小芯片的拾取性主要被带有胶黏剂片的芯片的边缘剥离强度所支配,若因由销导致的上推而一旦产生边缘的剥离,则其后压敏胶黏剂层与胶黏剂片的界面剥离顺利地进展。因此,即使压敏胶黏剂层的胶接力相对较强,当为小晶片时也能够实现优异的拾取性。并且,压敏胶黏剂层的胶接力相对较强,由此能够充分抑制切晶工序中的DAF飞散。
本发明人等进一步进行研究的结果,得到了如下见解:若压敏胶黏剂层相对于胶黏剂片的胶接力大于3.0N/25mm,则即使为小芯片,界面剥离也难以进展而成为拾取失误增加的倾向。基于该见解,本发明人等通过将边缘剥离强度抑制在1.2N以下,并将压敏胶黏剂层的胶接力设为3.0N/25mm以下,从而得到了更佳优异的拾取性。
本公开提供一种考虑了小芯片(面积为9mm2以下)的边缘剥离及界面剥离的影响的切晶粘晶一体型膜的评价方法及分选方法。并且,本公开提供一种考虑了小芯片的边缘剥离及界面剥离的影响的拾取性的评价方法、以及小芯片的拾取性优异的切晶粘晶一体型膜及使用了该切晶粘晶一体型膜半导体装置的制造方法。
用于解决课题的手段
本公开的一方面涉及一种切晶粘晶一体型膜的评价方法。该评价方法用于对应用于包括将晶片单片化成面积为9mm2以下的多个芯片的工序的半导体装置制造工艺的切晶粘晶一体型膜的拾取性进行评价。该评价方法包括以下(A)~(E)工序,在(B)工序中测定的剥离强度(压敏胶黏剂层的胶接力)为3.0N/25mm以下并且在(E)工序中测定的边缘剥离强度为1.2N以下时,判定切晶粘晶一体型膜具有良好的拾取性。
(A)准备作为评价对象的切晶粘晶一体型膜的工序,该切晶粘晶一体型膜具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖压敏胶黏剂层的第二面的中央部的的方式配置
(B)在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下,测定压敏胶黏剂层从胶黏剂层的剥离强度的第一测定工序
(C)对切晶粘晶一体型膜的胶黏剂层粘贴厚度为50μm的硅晶片,并且对压敏胶黏剂层的第二面粘贴切晶环的工序
(D)将硅晶片及胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的带有胶黏剂片的芯片的工序
(E)在温度23℃下从基材层侧以60mm/分钟的速度压入带有胶黏剂片的芯片的中央部,并测定带有胶黏剂片的芯片的边缘从压敏胶黏剂层剥离时的边缘剥离强度的第二测定工序
根据本发明人等的研究,通过在上述条件(硅晶片的厚度及带有胶黏剂片的芯片的尺寸等)下测定边缘剥离强度而能够得到再现性充分高的测定结果。并且,通过在剥离角度30°的条件下测定压敏胶黏剂层从胶黏剂层的剥离强度而能够判断界面剥离性的良否。因此,即使未通过半导体装置的制造中所使用的粘晶装置实际进行拾取,也能够有效地对切晶粘晶一体型膜的拾取性进行评价。该评价方法例如在半导体装置的制造工艺中有任何变更时,能够有效地选择适合新的制造工艺的切晶粘晶一体型膜的方面有用。
本公开的一方面可以对使用了切晶粘晶一体型膜的半导体装置制造工艺中的拾取性进行评价。该评价方法包括以下工序。
(i)准备作为评价对象的切晶粘晶一体型膜的工序,该切晶粘晶一体型膜具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖压敏胶黏剂层的第二面的中央部的的方式配置
(ii)在剥离角度30°的条件下测定压敏胶黏剂层从胶黏剂层的剥离强度的第一测定工序
(iii)对切晶粘晶一体型膜的胶黏剂层粘贴厚度10~100μm的晶片,并且对压敏胶黏剂层的第二面粘贴切晶环的工序
(iv)将晶片及胶黏剂层单片化成面积为9mm2以下的带有胶黏剂片的芯片的工序
(v)从基材层侧压入带有胶黏剂片的芯片的中央部,并测定带有胶黏剂片的芯片的边缘从压敏胶黏剂层剥离时的边缘剥离强度的第二测定工序
本公开的一方面涉及一种切晶粘晶一体型膜。该切晶粘晶一体型膜具备:基材层;压敏胶黏剂层,具有与基材层相向的第一面及其相反侧的第二面;及胶黏剂层,被设置成覆盖压敏胶黏剂层的第二面的中央部,在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下测定的压敏胶黏剂层从胶黏剂层的剥离强度为3.0N/25mm以下并且经过以下工序测定的边缘剥离强度为1.2N以下。
<边缘剥离强度的测定>
·对胶黏剂层粘贴厚度为50μm的硅晶片,并且对压敏胶黏剂层的第二面粘贴切晶环的工序
·将硅晶片及胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的带有胶黏剂片的芯片的工序
·在温度23℃下从基材层侧以60mm/分钟的速度压入带有胶黏剂片的芯片的中央部,并测定带有胶黏剂片的芯片的边缘从压敏胶黏剂层剥离时的边缘剥离强度的工序
上述切晶粘晶一体型膜的带有胶黏剂片的芯片(尺寸:2mm×2mm)的边缘剥离强度为1.2N以下并且压敏胶黏剂层从胶黏剂层的剥离强度为3.0N/25mm以下,由此能够在包括将晶片单片化成面积为9mm2以下的多个芯片的工序的半导体装置制造工艺中实现优异的拾取性。
存在如下倾向,即当通过刀片切割而将胶黏剂层连同晶片单片化时,容易在胶黏剂层的边缘产生毛刺,且带有胶黏剂片的芯片的边缘剥离强度变高。关于上述切晶粘晶一体型膜,优选即使通过刀片切割而得到了多个带有胶黏剂片的芯片时,也分别满足带有胶黏剂片的芯片的边缘剥离强度及界面剥离强度的条件。切晶粘晶一体型膜为了满足这些条件,例如适当地采用以下技术方案即可。
·通过将胶黏剂层相对高粘度化(高弹性化),或者薄膜化(例如60μm以下)来提高刀片切割时的胶黏剂层的切割性。
·通过变更压敏胶黏剂层的成分(例如,交联剂或光聚合引发剂)的量来将压敏胶黏剂层相对高弹性化,或者调整胶接力。
·减少基材层的断裂伸长率。
·将压敏胶黏剂层厚膜化(例如30μm以上)以便刀片切割时不会切入到基材层。
本公开的一方面涉及一种半导体装置的制造方法。该制造方法包括:准备上述切晶粘晶一体型膜的工序;对切晶粘晶一体型膜的胶黏剂层粘贴晶片,并且对压敏胶黏剂层的第二面粘贴切晶环的工序;将晶片及胶黏剂层单片化成面积为9mm2以下的多个带有胶黏剂片的芯片的工序;从压敏胶黏剂层拾取带有胶黏剂片的芯片的工序;及将带有胶黏剂片的芯片安装于基板或其他芯片上。根据该半导体装置的制造方法,能够实现带有胶黏剂片的芯片的优异的拾取性,并能够以充分高的成品率制造半导体装置。
本公开的一方面涉及一种切晶粘晶一体型膜的分选方法。根据以下的分选方法,能够有效地分选可以高成品率制造半导体装置的切晶粘晶一体型膜。切晶粘晶一体型膜的分选方法的第一方式包括:准备两种以上的切晶粘晶一体型膜的工序,所述两种以上的切晶粘晶一体型膜分别具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖压敏胶黏剂层的第二面的中央部的方式配置;比较两种以上的切晶粘晶一体型膜的压敏胶黏剂层从胶黏剂层的剥离强度及边缘剥离强度的工序。
切晶粘晶一体型膜的分选方法的第二方式包括:准备多个切晶粘晶一体型膜的工序,该多个切晶粘晶一体型膜分别具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖压敏胶黏剂层的第二面的中央部的方式配置,在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下测定的压敏胶黏剂层从胶黏剂层的剥离强度为3.0N/25mm以下;及对多个切晶粘晶一体型膜检查边缘剥离强度是否为1.2N以下的工序,所述边缘剥离强度经过以下工序测定。
<边缘剥离强度的测定>
·对胶黏剂层粘贴厚度为50μm的硅晶片,并且对压敏胶黏剂层的第二面粘贴切晶环的工序
·将硅晶片及胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的带有胶黏剂片的芯片的工序
·在温度23℃下从基材层侧以60mm/分钟的速度压入带有胶黏剂片的芯片的中央部,并测定带有胶黏剂片的芯片的边缘从压敏胶黏剂层剥离时的边缘剥离强度的工序
发明效果
根据本公开,可提供一种考虑了小芯片(面积为9mm2以下)的边缘剥离及界面剥离的影响的切晶粘晶一体型膜的评价方法及分选方法。并且,根据本公开,可提供一种考虑了小芯片的边缘剥离及界面剥离的影响的拾取性的评价方法、以及小芯片的拾取性优异的切晶粘晶一体型膜及使用了该切晶粘晶一体型膜的半导体装置的制造方法。
附图说明
图1(a)为表示切晶粘晶一体型膜的一实施方式的俯视图,图1(b)为沿着图1(a)所示的B-B线的示意剖视图。
图2(a)~图2(c)为示意性地表示测定边缘剥离强度的工序的剖视图。
图3为表示基于压入的位移(mm)与推力(N)的关系的一例的曲线图。
图4为示意性地表示对相当于测定对象的芯片的中央部的位置标注标记的状态的俯视图。
图5为示意性地表示边缘剥离强度的测定区域的一例的俯视图。
图6为示意性地表示测定压敏胶黏剂层相对于胶黏剂层的30°剥离强度的样子的剖视图。
图7为半导体装置的一实施方式的示意剖视图。
图8(a)~图8(d)为示意性地表示制造带有胶黏剂片的芯片的过程的剖视图。
图9为示意性地表示制造图7所示的半导体装置的过程的剖视图。
图10为示意性地表示制造图7所示的半导体装置的过程的剖视图。
图11为示意性地表示制造图7所示的半导体装置的过程的剖视图。
具体实施方式
以下,参考附图对本公开的实施方式进行详细说明。但是,本发明并不限定于以下实施方式。另外,在本说明书中,“(甲基)丙烯酸”是指丙烯酸或甲基丙烯酸,“(甲基)丙烯酸酯”是指丙烯酸酯或与其对应的甲基丙烯酸酯。“A或B”只要包括A与B中的任一方即可,也可以包括该两者。
在本说明书中“层”这一词不仅包括作为俯视图而观察时在整个面上形成的结构,还包括形成在一部分上的形状的结构。并且,在本说明书中“工序”这一词不仅包括独立的工序,而且在无法与其他工序明确区分时也实现该工序的所希望的作用,则也包含于本术语中。并且,使用“~”表示的数值范围表示将记载于“~”前后的数值分别作为最小值及最大值而包含的范围。
在本说明书中,当在组合物中存在多个与各成分对应的物质时,只要无特别限制,则组合物中的各成分的含量是指组合物中所存在的该多种物质的合计量。并且,只要无特别限制,则例示材料可以单独使用,也可以组合使用两种以上。并且,在本说明书中阶段性地记载的数值范围,某一阶段的数值范围的上限值或下限值可以替换成其他阶段的数值范围的上限值或下限值。并且,在本说明书中所记载的数值范围内,该数值范围的上限值或下限值可以替换成实施例中所示的值。
<切晶粘晶一体型膜>
图1(a)为表示本实施方式所涉及的切晶粘晶一体型膜的俯视图,图1(b)为沿着图1的B-B线的示意剖视图。切晶粘晶一体型膜10(以下根据情况而简称为“膜10”。)可应用于半导体装置的制造工艺中,上述半导体装置的制造工艺包括将晶片W单片化成面积为9mm2以下的多个芯片的切晶工序及之后的拾取工序(参考图8(c)及图8(d))。
膜10依次具备:基材层1、具有与基材层1相向的第一面F1及其相反侧的第二面F2的压敏胶黏剂层3及被设置成覆盖压敏胶黏剂层3的第二面F2的中央部的胶黏剂层5。在本实施方式中例示了正方形基材层1,但基材层1也可以为圆形并且尺寸与压敏胶黏剂层3相同。并且,在本实施方式中,例示出在基材层1上形成有一个压敏胶黏剂层3及胶黏剂层5的层叠体的方式,但也可以为基材层1具有规定的长度(例如100m以上),且以沿其长边方向排列的方式,压敏胶黏剂层3及胶黏剂层5的层叠体以规定的间隔配置的方式。
膜10的边缘剥离强度为1.2N以下。边缘剥离强度经过以下工序而测定。膜10的边缘剥离强度的上限值即使为1.1N或0.9N,下限值例如为0.1N,也可以为0.15N或0.2N。
<边缘剥离强度的测定>
·对胶黏剂层5粘贴厚度为50μm的硅晶片Ws,并且对压敏胶黏剂层3的第二面F2粘贴切晶环DR的工序(参考图2(a))
·将硅晶片Ws及胶黏剂层5单片化成多个带有胶黏剂片的芯片Ta(以下,根据情况而简单称为“芯片Ta”。)的工序(参考图2(b))
·在温度23℃下从基材层1侧以60mm/分钟的速度压入芯片Ta的中央部(参考图2(c)),并测定芯片Ta从边缘从压敏胶黏剂层3剥离时的边缘剥离强度的工序
膜10的边缘剥离强度在上述范围内,由此能够评价为膜10适合将晶片单片化成面积为9mm2以下的多个小芯片的切晶工序及其后的拾取工序。
如图2(b)所示,芯片Ta由芯片Ts和胶黏剂片5p构成。将硅晶片Ws及胶黏剂层5单片化成多个芯片Ta的工序例如可以通过以下条件的刀片切割来实施。
<切晶条件>
·切晶机:DFD6361(迪思科(DISCO)公司制)
·刀片:ZH05-SD4000-N1-70-BB(迪思科(DISCO)公司制)
·刀片转速:40000rpm
·切晶速度:30mm/秒钟
·刀片高度:90μm
·从压敏胶黏剂层3的表面的切入深度:20μm
·俯视观察时的芯片Ta的形状:2mm×2mm的正方形
作为刀片的种类,为了确保芯片的加工质量,并且抑制从基材层1等产生的切割屑(毛刺)而只要为迪思科(DISCO)公司制刀片,则优选使用#4000~#4800的粒径细的刀片。
使用厚度为50μm的硅晶片Ws的理由如下。例如,当硅晶片的厚度为30μm以下时,通过刀片切割单片化时,容易发生芯片碎裂及芯片破裂的问题。除此以外,在测定边缘剥离强度时芯片有可能破裂。另一方面,例如当硅晶片的厚度为80μm以上时,通过刀片切割单片化时,存在不得不应用阶梯切割而难以选择刀片及设定条件。除此以外,若芯片厚则测定边缘剥离强度时芯片不易翘曲,因此还有可能边缘的剥离性变良好且难以在膜之间产生差异。并且,近年来进行了半导体晶片的薄化,因此在顺应市场动向的意义上也使用厚度为50μm的硅晶片。
将带有胶黏剂片的芯片Ta的尺寸设为2mm×2mm的理由如下。例如,当将带有胶黏剂片的芯片Ta的尺寸设为1mm×1mm时,芯片的中央部(对芯片施加推力的部位)与边缘的距离过于近,因此有可能边缘的剥离性变良好且不易在膜之间产生差异。除此以外,由于芯片过于薄而难以对芯片的中央部标记,在无标记的肉眼观察下有可能因位置偏离而产生测定误差。另一方面,例如当将带有胶黏剂片的芯片Ta的尺寸设为3mm×3mm时,在测定芯片边缘部的剥离强度时,芯片的中央部与边缘距离过于远,因此不易传递基于压入的推力,难以准确测定边缘剥离强度。除此以外,使边缘剥离时需要较大的压入量,而且芯片的翘曲大而有可能在测定中产生芯片破裂。
在测定边缘剥离强度的工序中,如图2(c)所示,用压入夹具P从基材层1侧压入芯片Ta的中央部。例如,使用以下装置等,并在以下条件下测定边缘剥离强度即可。
<测定条件>
·测定装置:小型台式试验机EZ-SX(岛津制作所股份有限公司制)
·称重传感器:50N
·压入夹具:ZTS系列附属配件(形状:圆锥型,今田股份有限公司制)
·压入速度:60mm/分钟
·温度:23℃
·湿度:45±10%
图3为表示基于压入的位移(mm)与推力(N)的关系的一例的曲线图。芯片的边缘被剥离时,如图3所示,推力暂时减小,且在曲线图上产生变化点。将该变化点中的推力值作为边缘剥离强度。
测定边缘剥离强度时,优选预先使用油性笔等在基材层1中的相当于芯片Ta的中央部的位置标记。通过预先作出标记,能够以良好的精度进行测定,并且容易进行定位且测定效率提高。
将压入速度设为60mm/分钟的理由如下。即,从与实际拾取条件相匹配的意义上优选压入速度为60~1200mm/分钟(1~20mm/秒钟),但例如压入速度过快,则在边缘被剥离之后直至停止压入为止的期间对试样施加需要以上的推力,从而测定对象的芯片周边的芯片也被剥离,或者基材层破裂而有可能对之后的测定带来不良影响。因此,在上述范围内选择尽可能低速的压入速度。
优选对多个芯片Ta测定边缘剥离强度,并将多个测定值的平均值作为膜10的边缘剥离强度。例如,对5个以上(更优选为10~20个)的芯片Ta进行测定而计算其平均值即可。当测定第一芯片Ta的边缘剥离强度之后,测定第二芯片Ta的边缘剥离强度时,优选第二芯片Ta与第一芯片Ta充分分离,以免对第一芯片Ta的压入影响第二芯片Ta。例如,优选在第一芯片Ta与第二芯片Ta之间存在两个以上的芯片Ta。图4为示意性地表示在相当于测定对象的芯片的中央部的位置标注标记M的状态的俯视图。在该图中,在测定对象的两个芯片Ta之间隔开三个芯片量的间隔。
当硅晶片Ws为12英寸晶片时,优选测定图5所示的测定区域A内的多个芯片Ta。即,如图5所示,将切晶环DR的切口N的位置作为纸面的上方时,优选自硅晶片Ws的下侧端部隔开50mm的距离而在80mm×20mm内的区域进行测定。在硅晶片Ws的端部和中央部,基材层1的张力及压入时的基材层1的延伸不同,因此有可能根据位置而测定值出现偏差。与上述测定区域相同的设定还可以应用于8英寸晶片的情况。另外,测定区域A并不仅限于图5所示的位置,例如只要从晶片Ws的端部隔开规定距离,则也可以为图5中的上侧、左侧或右侧。
另外,除了通过测定边缘剥离强度来评价拾取性以外,还可以通过对相同的试样使用粘晶装置实际进行拾取来对拾取性进行评价。在该情况下,优选首先进行边缘剥离强度的测定。使用了粘晶装置的拾取通常在扩张了基材膜的状态下进行。在解除扩张的状态之后,有时基于扩张的基材层1的松弛不会恢复,从而有可能难以以良好的精度测定边缘剥离强度。
第一区域3a相对于胶黏剂层5的胶接力为3.0N/25mm以下。该胶接力的上限值也可以为2.75N/25mm或2.5N/25mm。该胶接力为在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下所测定的30°剥离强度。图6为示意性地表示在将测定试样(宽度25mm×长度100mm)的胶黏剂层5固定于支撑板80的状态下,测定压敏胶黏剂层3的30°剥离强度的样子的剖视图。通过将第一区域3a相对于胶黏剂层5的胶接力(30°剥离强度)设为上述范围,能够实现优异的拾取性,并能够以充分高的成品率制造半导体装置。从抑制切晶时的DAF飞散的观点考虑,该胶接力优选为1.2N/25mm以上。
接着,对构成切晶粘晶一体型膜的各层进行说明。
(基材层)
作为基材层1,能够使用已知的聚合物片或膜,若在低温条件下也能够实施扩张工序,则并无特别限制。具体而言,作为构成基材层1的聚合物,可举出:结晶性聚丙烯、非晶性聚丙烯、高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、超低密度聚乙烯、低密度直链聚乙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯酯共聚物、离子聚合物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨基甲酸酯、聚对苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯基硫醚、芳族聚酰胺(aramid)(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素系树脂、硅酮树脂、或在这些中混合有塑化剂的混合物、或者通过电子束照射而已实施交联的固化物。
基材层1优选为具有以选自聚乙烯、聚丙烯、聚乙烯-聚丙烯无规共聚物、聚乙烯-聚丙烯嵌段共聚物中的至少一种树脂为主成分的表面,且该表面与压敏胶黏剂层3相接。这些树脂从杨氏模量、应力缓和性及熔点等特性、以及价格方面、使用后的废弃材料回收利用等观点考虑也为良好的基材。基材层1可以为单层,但根据需要也可以具有层叠由不同材质组成的层而成的多层结构。为了控制与压敏胶黏剂层3的密合性,还可以对基材层1的表面实施消光处理、电晕处理等表面粗糙化处理。基材层1的厚度例如为10~200μm,也可以为20~180μm或30~150μm。
(压敏胶黏剂层)
压敏胶黏剂层3具有:第一区域3a,至少包含与胶黏剂层5中的硅晶片Ws的贴附位置对应的区域Rw;及第二区域3b,以包围第一区域3a的方式定位。图1(a)及图1(b)中的虚线表示第一区域3a与第二区域3b的边界。第一区域3a及第二区域3b在活性能量线的照射前由相同的组合物组成。第一区域3a为通过照射紫外线等活性能量线而呈与第二区域3b相比胶接力下降的状态的区域。第二区域3b为用来贴附切晶环DR的区域(参考图2(a))。第二区域3b为未照射活性能量线的区域,且具有对切晶环DR的高胶接力。
压敏胶黏剂层3的厚度根据扩张工序的条件(温度及张力等)而适当设定即可,例如为1~200μm,也可以为5~50μm或15~45μm。若压敏胶黏剂层3的厚度小于1μm,则胶黏性容易变得不充分,若超过200μm,则在扩张时切口宽度窄(在销上推时缓和应力),拾取容易变得不充分。
第一区域3a相对于胶黏剂层5具有上述范围(3.0N/25mm以下)的胶接力,并通过活性能量线的照射而形成。本发明人等发现,通过活性能量线的照射而压敏胶黏剂层3的胶接力降低会给带有胶黏剂片的芯片的边缘剥离强度带来影响。即,若第一区域3a的胶接力通过活性能量线的照射而过度下降,则第一区域3a相对于胶黏剂层5的30°剥离强度变低,另一方面,当拾取对象为小芯片时,处于存在带有胶黏剂片的芯片的边缘难以剥离的趋势,从而芯片过度变形而容易产生破裂或拾取失误。第一区域3a相对于胶黏剂层5的胶接力优选不过度降低照射活性能量线前的胶接力,由此即使为面积为9mm2以下的带有胶黏剂片的芯片,其边缘也容易从压敏胶黏剂层3(第一区域3a)剥离。在本实施方式中,例如能够通过将压敏胶黏剂层3中的交联剂的量设为相对较少,或者减少活性能量线的照射量等来调整压敏胶黏剂层3的第一区域3a的胶接力。
第二区域3b相对于不锈钢基板的胶接力优选为0.2N/25mm以上。该胶接力为在温度23℃、剥离角度90°及剥离速度50mm/分钟的条件下所测定的90°剥离强度。通过该胶接力为0.2N/25mm以上,能够充分地抑制切晶时的环剥落。该胶接力的下限值可以为0.3N/25mm或0.4N/25mm,上限值例如可以为2.0N/25mm,也可以为1.0N/25mm。
活性能量线照射前的压敏胶黏剂层例如由含有(甲基)丙烯酸系树脂、光聚合引发剂及交联剂的压敏胶黏剂组合物组成。不照射活性能量线的第二区域3b由与活性能量线照射前的压敏胶黏剂层相同的组成组成。以下,对压敏胶黏剂组合物的含有成分进行详细说明。
[(甲基)丙烯酸系树脂]
压敏胶黏剂组合物优选为包含具有可链聚合的官能团的(甲基)丙烯酸系树脂,且官能团为选自丙烯酰基及甲基丙烯酰基中的至少一种。活性能量线照射前的压敏胶黏剂层中的上述官能团的含量例如为0.1mmol/g~1.2mmol/g,也可以为0.3mmol/g~1.0mmol/g或0.5mmol/g~0.8mmol/g。通过上述官能团的含量为0.1mmol/g以上,容易通过活性能量线的照射而形成胶接力适度下降的区域(第一区域3a),另一方面,通过为1.2mmol/g以下,容易实现优异的拾取性。
(甲基)丙烯酸系树脂能够通过利用已知的方法进行合成而得到。作为合成方法,例如可举出溶液聚合法、悬浮聚合法、乳化聚合法、块状聚合法、析出聚合法、气相聚合法、等离子体聚合法、超临界聚合法。另外,作为聚合反应的种类,除自由基聚合、阳离子聚合、阴离子聚合、活性自由基聚合、活性阳离子聚合、活性阴离子聚合、配位聚合、永生聚合(immortal polymerization)等以外,还可举出原子转移自由基聚合(atom transferradical polymerization,ATRP)及可逆加成断裂链转移聚合(reversible additionfragmentation chain transfer polymerization,RAFT)等方法。这些中,使用溶液聚合法且通过自由基聚合来进行合成,除经济性良好、反应率高、聚合控制容易等以外,还具有能够直接使用通过聚合而得到的树脂溶液来进行调配等的优点。
在此,以使用溶液聚合法且通过自由基聚合而得到(甲基)丙烯酸系树脂的方法为例,对(甲基)丙烯酸系树脂的合成法进行详细说明。
作为合成(甲基)丙烯酸系树脂时所使用的单体,只要在一分子中具有一个(甲基)丙烯酰基,则并无特别限制。作为其具体例,可举出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸丁氧基乙酯、(甲基)丙烯酸异戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛基庚酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸月桂基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸硬脂基酯、(甲基)丙烯酸山萮基酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、丁二酸单(2-(甲基)丙烯酰氧基乙基)酯等脂肪族(甲基)丙烯酸酯;(甲基)丙烯酸环戊酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸环戊酯、(甲基)丙烯酸二环戊酯、(甲基)丙烯酸二环戊烯酯、(甲基)丙烯酸异冰片酯、四氢邻苯二甲酸单(2-(甲基)丙烯酰氧基乙基)酯、六氢邻苯二甲酸单(2-(甲基)丙烯酰氧基乙基)酯等脂环式(甲基)丙烯酸酯;(甲基)丙烯酸苄基酯、(甲基)丙烯酸苯基酯、(甲基)丙烯酸邻联苯基酯、(甲基)丙烯酸1-萘基酯、(甲基)丙烯酸2-萘基酯、(甲基)丙烯酸苯氧基乙酯、(甲基)丙烯酸对枯基苯氧基乙酯、(甲基)丙烯酸邻苯基苯氧基乙酯、(甲基)丙烯酸1-萘氧基乙酯、(甲基)丙烯酸2-萘氧基乙酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、(甲基)丙烯酸2-羟基-3-苯氧基丙酯、(甲基)丙烯酸2-羟基-3-(邻苯基苯氧基)丙酯、(甲基)丙烯酸2-羟基-3-(1-萘氧基)丙酯、(甲基)丙烯酸2-羟基-3-(2-萘氧基)丙酯等芳香族(甲基)丙烯酸酯;(甲基)丙烯酸2-四氢糠酯、N-(甲基)丙烯酰氧基乙基六氢邻苯二甲酰亚胺、2-(甲基)丙烯酰氧基乙基-N-咔唑等杂环式(甲基)丙烯酸酯、这些化合物的己内酯改性体;ω-羧基-聚己内酯单(甲基)丙烯酸酯、(甲基)丙烯酸缩水甘油酯、(甲基)丙烯酸α-乙基缩水甘油酯、(甲基)丙烯酸α-丙基缩水甘油酯、(甲基)丙烯酸α-丁基缩水甘油酯、(甲基)丙烯酸2-甲基缩水甘油酯、(甲基)丙烯酸2-乙基缩水甘油酯、(甲基)丙烯酸2-丙基缩水甘油酯、(甲基)丙烯酸3,4-环氧基丁酯、(甲基)丙烯酸3,4-环氧基庚酯、(甲基)丙烯酸α-乙基-6,7-环氧基庚酯、(甲基)丙烯酸3,4-环氧基环己基甲酯、邻乙烯基苄基缩水甘油醚、间乙烯基苄基缩水甘油醚、对乙烯基苄基缩水甘油醚等具有乙烯性不饱和基与环氧基的化合物;(甲基)丙烯酸(2-乙基-2-氧杂环丁基)甲酯、(甲基)丙烯酸(2-甲基-2-氧杂环丁基)甲酯、(甲基)丙烯酸2-(2-乙基-2-氧杂环丁基)乙酯、(甲基)丙烯酸2-(2-甲基-2-氧杂环丁基)乙酯、(甲基)丙烯酸3-(2-乙基-2-氧杂环丁基)丙酯、(甲基)丙烯酸3-(2-甲基-2-氧杂环丁基)丙酯等具有乙烯性不饱和基与氧杂环丁基的化合物;2-(甲基)丙烯酰氧基乙基异氰酸酯等具有乙烯性不饱和基与异氰酸酯基的化合物;(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸3-氯-2-羟基丙酯、(甲基)丙烯酸2-羟基丁酯等具有乙烯性不饱和基与羟基的化合物,能够将这些适当组合来得到作为目标的(甲基)丙烯酸系树脂。
从与后述的官能团导入化合物或交联剂的反应方面考虑,(甲基)丙烯酸系树脂优选为具有选自羟基、缩水甘油基及氨基等中的至少一种官能团。作为用于合成具有羟基的(甲基)丙烯酸系树脂的单体,可举出(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸3-氯-2-羟基丙酯、(甲基)丙烯酸2-羟基丁酯等具有乙烯性不饱和基与羟基的化合物,这些能够单独使用一种,或者同时使用两种以上。
作为用于合成具有缩水甘油基的(甲基)丙烯酸系树脂的单体,可举出(甲基)丙烯酸缩水甘油酯、(甲基)丙烯酸α-乙基缩水甘油酯、(甲基)丙烯酸α-丙基缩水甘油酯、(甲基)丙烯酸α-丁基缩水甘油酯、(甲基)丙烯酸2-甲基缩水甘油酯、(甲基)丙烯酸2-乙基缩水甘油酯、(甲基)丙烯酸2-丙基缩水甘油酯、(甲基)丙烯酸3,4-环氧基丁酯、(甲基)丙烯酸3,4-环氧基庚酯、(甲基)丙烯酸α-乙基-6,7-环氧基庚酯、(甲基)丙烯酸3,4-环氧基环己基甲酯、邻乙烯基苄基缩水甘油醚、间乙烯基苄基缩水甘油醚、对乙烯基苄基缩水甘油醚等具有乙烯性不饱和基与环氧基的化合物,这些能够单独使用一种,或者同时使用两种以上。
由这些单体所合成的(甲基)丙烯酸系树脂优选为包含可链聚合的官能团。可链聚合的官能团例如为选自丙烯酰基及甲基丙烯酰基中的至少一种。可链聚合的官能团例如能够通过使以下化合物(官能团导入化合物)与如上所述般合成的(甲基)丙烯酸系树脂反应,而导入至该(甲基)丙烯酸系树脂中。作为官能团导入化合物的具体例,可举出2-甲基丙烯酰氧基乙基异氰酸酯、间-异丙烯基-α,α-二甲基苄基异氰酸酯、甲基丙烯酰基异氰酸酯、烯丙基异氰酸酯、1,1-(双丙烯酰氧基甲基)乙基异氰酸酯;通过二异氰酸酯化合物或者聚异氰酸酯化合物与(甲基)丙烯酸羟基乙酯或(甲基)丙烯酸4-羟基丁基乙酯的反应而得到的丙烯酰基单异氰酸酯化合物;通过二异氰酸酯化合物或者聚异氰酸酯化合物与多元醇化合物及(甲基)丙烯酸羟基乙酯的反应而得到的丙烯酰基单异氰酸酯化合物等。这些中,尤其优选为2-甲基丙烯酰氧基乙基异氰酸酯。这些化合物能够单独使用一种,还能够组合使用两种以上。
(甲基)丙烯酸系树脂的重均分子量(Mw)例如为10万~200万以上,优选为15万~100万,更优选为20万~80万。若(甲基)丙烯酸系树脂的重均分子量(Mw)在这种范围内,则能够形成胶黏性优异且低分子量成分少而可防止被粘物的污染的压敏胶黏剂层3。
(甲基)丙烯酸系树脂的羟基值优选为10~150mgKOH/g,更优选为20~100mgKOH/g。(甲基)丙烯酸系树脂的羟基值在上述范围内,由此发挥能够通过与交联剂的反应来调整初始胶接力并且降低可链聚合的官能团的反应后的剥离力的效果。
[光聚合引发剂]
作为光聚合引发剂,只要通过照射活性能量线(选自紫外线、电子束及可见光线中的至少一种)而产生可链聚合的活性种,则并无特别限制,例如可举出光自由基聚合引发剂。在此所谓可链聚合的活性种,是指通过与可链聚合的官能团反应而开始聚合反应。
作为光自由基聚合引发剂,可举出2,2-二甲氧基-1,2-二苯基乙烷-1-酮等安息香缩酮;1-羟基环己基苯基酮、2-羟基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羟基乙氧基)苯基]-2-羟基-2-甲基-1-丙烷-1-酮等α-羟基酮;2-苄基-2-二甲基氨基-1-(4-吗啉基苯基)-丁烷-1-酮、1,2-甲基-1-[4-(甲硫基)苯基]-2-吗啉基丙烷-1-酮等α-氨基酮;1-[4-(苯硫基)苯基]-1,2-辛二酮-2-(苯甲酰基)肟等肟酯;双(2,4,6-三甲基苯甲酰基)苯基氧化膦、双(2,6-二甲氧基苯甲酰基)-2,4,4-三甲基戊基氧化膦、2,4,6-三甲基苯甲酰基二苯基氧化膦等氧化膦;2-(邻氯苯基)-4,5-二苯基咪唑二聚体、2-(邻氯苯基)-4,5-二(甲氧基苯基)咪唑二聚体、2-(邻氟苯基)-4,5-二苯基咪唑二聚体、2-(邻甲氧基苯基)-4,5-二苯基咪唑二聚体、2-(对甲氧基苯基)-4,5-二苯基咪唑二聚体等2,4,5-三芳基咪唑二聚体;二苯甲酮、N,N'-四甲基-4,4'-二氨基二苯甲酮、N,N'-四乙基-4,4'-二氨基二苯甲酮、4-甲氧基-4'-二甲基氨基二苯甲酮等二苯甲酮化合物;2-乙基蒽醌、菲醌、2-叔丁基蒽醌、八甲基蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等醌化合物;安息香甲醚、安息香乙醚、安息香苯醚等安息香醚;安息香、甲基安息香、乙基安息香等安息香化合物;苄基二甲基缩酮等苄基化合物;9-苯基吖啶、1,7-双(9,9'-吖啶基庚烷)等吖啶化合物;N-苯基甘氨酸;香豆素。
相对于(甲基)丙烯酸系树脂的含量100质量份,压敏胶黏剂组合物中的光聚合引发剂的含量例如为0.1质量份~30质量份,优选为0.3质量份~10质量份,更优选为0.5质量份~5质量份。若光聚合引发剂的含量小于0.1质量份,则压敏胶黏剂层在活性能量线照射后发生固化不足,容易导致拾取不良。若光聚合引发剂的含量超过30质量份,则容易产生对胶黏剂层的污染(光聚合引发剂向胶黏剂层的转印)。
[交联剂]
交联剂例如为出于控制压敏胶黏剂层的弹性模量和/或胶黏性的目的而使用。交联剂只要为一分子中具有两个以上的可与上述(甲基)丙烯酸系树脂所具有的选自羟基、缩水甘油基及氨基等中的至少一种官能团反应的官能团的化合物即可。作为通过交联剂与(甲基)丙烯酸系树脂的反应而形成的键,可举出酯键、醚键、酰胺键、酰亚胺键、氨基甲酸酯键、脲键等。
在本实施方式中,作为交联剂,优选为采用一分子中具有两个以上的异氰酸酯基的化合物。若使用此种化合物,则容易与上述(甲基)丙烯酸系树脂所具有的羟基、缩水甘油基及氨基等反应,能够形成牢固的交联结构。
作为一分子中具有两个以上的异氰酸酯基的化合物,可举出2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、1,3-亚二甲苯基二异氰酸酯、1,4-亚二甲苯基二异氰酸酯、二苯基甲烷-4,4'-二异氰酸酯、二苯基甲烷-2,4'-二异氰酸酯、3-甲基二苯基甲烷二异氰酸酯、六亚甲基二异氰酸酯、异佛尔酮二异氰酸酯、二环己基甲烷-4,4'-二异氰酸酯、二环己基甲烷-2,4'-二异氰酸酯、赖氨酸异氰酸酯等异氰酸酯化合物。
作为交联剂,可以采用上述异氰酸酯化合物与一分子中具有两个以上的OH基的多元醇的反应产物(含异氰酸酯基的低聚物)。作为一分子中具有两个以上的OH基的多元醇的例子,可举出乙二醇、丙二醇、丁二醇、1,6-己二醇、1,8-辛二醇、1,9-壬二醇、1,10-癸二醇、1,11-十一烷二醇、1,12-十二烷二醇、甘油、季戊四醇、二季戊四醇、1,4-环己二醇、1,3-环己二醇。
这些中,作为交联剂,更优选为一分子中具有两个以上的异氰酸酯基的多官能异氰酸酯与一分子中具有三个以上的OH基的多元醇的反应产物(含异氰酸酯基的低聚物)。通过将此种含异氰酸酯基的低聚物用作交联剂,压敏胶黏剂层3形成致密的交联结构,由此,在拾取工序中能够充分地抑制压敏胶黏剂附着于胶黏剂层5。
压敏胶黏剂组合物中的交联剂的含量只要根据对压敏胶黏剂层所要求的凝聚力及断裂伸长率、以及与胶黏剂层5的密合性等而适当设定即可。具体而言,相对于(甲基)丙烯酸系树脂的含量100质量份,交联剂的含量例如为2质量份~30质量份,也可以为4质量份~15质量份或7质量份~10质量份。通过将交联剂的含量设为上述范围,能够均衡性良好地兼备在切晶工序中对压敏胶黏剂层所要求的特性及在粘晶工序中对压敏胶黏剂层3所要求的特性,并且还可实现优异的拾取性。
若相对于(甲基)丙烯酸系树脂的含量100质量份,交联剂的含量小于2质量份,则交联结构的形成容易变得不充分,由此,在拾取工序中,与胶黏剂层5的界面密合力不会充分下降而容易在拾取时产生不良。另一方面,若相对于(甲基)丙烯酸系树脂的含量100质量份,交联剂的含量超过30质量份,则压敏胶黏剂层3容易变得过硬,由此,在扩张工序中,半导体芯片容易剥离。
交联剂相对于压敏胶黏剂组合物的总质量的含量例如为0.1~20质量%,也可以为2~17质量%或3~15质量%。通过交联剂的含量为0.1质量%以上,容易通过活性能量线的照射而形成胶接力适度下降的区域(第一区域3a),另一方面,通过为15质量%以下,容易实现优异的拾取性。
作为压敏胶黏剂层3的形成方法,能够采用已知的方法。例如,可以通过双层挤压法来形成基材层1与压敏胶黏剂层3的层叠体,也可以制备压敏胶黏剂层3的形成用清漆,将其涂敷于基材层1的表面,或者在经脱模处理的膜上形成压敏胶黏剂层3,将其转印至基材层1。
压敏胶黏剂层3的形成用清漆优选为使用有机溶剂来进行制备,上述有机溶剂可溶解(甲基)丙烯酸系树脂、光聚合引发剂及交联剂且通过加热而挥发。作为有机溶剂的具体例,可举出甲苯、二甲苯、均三甲苯、枯烯、对伞花烃等芳香族烃;四氢呋喃、1,4-二噁烷等环状醚;甲醇、乙醇、异丙醇、丁醇、乙二醇、丙二醇等醇;丙酮、甲基乙基酮、甲基异丁基酮、环己酮、4-羟基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯等酯;碳酸亚乙酯、碳酸亚丙酯等碳酸酯;乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、乙二醇二甲醚、乙二醇二乙醚、丙二醇单甲醚、丙二醇单乙醚、丙二醇二甲醚、丙二醇二乙醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丁醚、二乙二醇二甲醚、二乙二醇二乙醚等多元醇烷基醚;乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、乙二醇单丁醚乙酸酯、丙二醇单甲醚乙酸酯、丙二醇单乙醚乙酸酯、二乙二醇单甲醚乙酸酯、二乙二醇单乙醚乙酸酯等多元醇烷基醚乙酸酯;N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基吡咯啶酮等酰胺。
这些中,从溶解性及沸点的观点考虑,例如优选为甲苯、甲醇、乙醇、异丙醇、丙酮、甲基乙基酮、甲基异丁基酮、环己酮、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙二醇单甲醚、乙二醇单乙醚、丙二醇单甲醚、丙二醇单乙醚、二乙二醇二甲醚、乙二醇单甲醚乙酸酯、丙二醇单甲醚乙酸酯、N,N-二甲基乙酰胺、乙酰丙酮。这些有机溶剂可以单独使用一种,也可以同时使用两种以上。清漆的固体成分浓度通常优选为10~60质量%。
(胶黏剂层)
胶黏剂层5中能够应用已知的构成粘晶膜的胶黏剂组合物。具体而言,构成胶黏剂层5的胶黏剂组合物优选为含有含环氧基的丙烯酸共聚物、环氧树脂及环氧树脂固化剂。根据包含这些成分的胶黏剂层5,具有如下特征而优选:芯片/基板间、芯片/芯片间的黏合性优异,而且还能够赋予电极埋入性及线埋入性等,且在粘晶工序中能够以低温来粘结、以短时间得到优异的固化,在利用密封剂模塑后具有优异的可靠性等。
胶黏剂层5的厚度例如为1~300μm,优选为5~150μm,也可以为10~100μm或15~35μm。若胶黏剂层5的厚度小于1μm,则黏合性容易变得不充分,另一方面,若大于300μm,则切晶性及拾取性容易变得不充分。
作为环氧树脂,例如可举出双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、脂环式环氧树脂、脂肪族链状环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂、双酚A酚醛清漆型环氧树脂、联苯酚的二缩水甘油醚化物、萘二醇的二缩水甘油醚化物、酚类的二缩水甘油醚化物、醇类的二缩水甘油醚化物及这些的烷基取代体、卤化物、氢化物等二官能环氧树脂、酚醛清漆型环氧树脂。另外,还可以应用多官能环氧树脂及含杂环的环氧树脂等通常已知的其他环氧树脂。这些能够单独使用或组合使用两种以上。另外,还可以在不损害损特性的范围内作为杂质而含有除了环氧树脂以外的成分。
作为环氧树脂固化剂,例如可举出如能够使酚化合物与作为二价连结基的亚二甲苯基化合物在无催化剂或酸催化剂的存在下进行反应而得到的酚树脂。作为用于酚树脂的制造中的酚化合物,可例示:苯酚、邻甲酚、间甲酚、对甲酚、邻乙基苯酚、对乙基苯酚、邻正丙基苯酚、间正丙基苯酚、对正丙基苯酚、邻异丙基苯酚、间异丙基苯酚、对异丙基苯酚、邻正丁基苯酚、间正丁基苯酚、对正丁基苯酚、邻异丁基苯酚、间异丁基苯酚、对异丁基苯酚、辛基苯酚、壬基苯酚、2,4-二甲酚、2,6-二甲酚、3,5-二甲酚、2,4,6-三甲基苯酚、间苯二酚(resorcin)、邻苯二酚、对苯二酚、4-甲氧基苯酚、邻苯基苯酚、间苯基苯酚、对苯基苯酚、对环己基苯酚、邻烯丙基苯酚、对烯丙基苯酚、邻苄基苯酚、对苄基苯酚、邻氯苯酚、对氯苯酚、邻溴苯酚、对溴苯酚、邻碘苯酚、对碘苯酚、邻氟苯酚、间氟苯酚、对氟苯酚等。这些酚化合物可以单独使用,也可以混合使用两种以上。用于酚树脂的制造中的作为二价连结基的亚二甲苯基化合物能够使用以下所示的亚二甲苯基二卤化物、亚二甲苯基二甘醇及其衍生物。即,能够举出α,α'-二氯-对二甲苯、α,α'-二氯-间二甲苯、α,α'-二氯-邻二甲苯、α,α'-二溴-对二甲苯、α,α'-二溴-间二甲苯、α,α'-二溴-邻二甲苯、α,α'-二碘-对二甲苯、α,α'-二碘-间二甲苯、α,α'-二碘-邻二甲苯、α,α'-二羟基-对二甲苯、α,α'-二羟基-间二甲苯、α,α'-二羟基-邻二甲苯、α,α'-二甲氧基-对二甲苯、α,α'-二甲氧基-间二甲苯、α,α'-二甲氧基-邻二甲苯、α,α'-二乙氧基-对二甲苯、α,α'-二乙氧基-间二甲苯、α,α'-二乙氧基-邻二甲苯、α,α'-二-正丙氧基-对二甲苯、α,α'-正丙氧基-间二甲苯、α,α'-二-正丙氧基-邻二甲苯、α,α'-二-异丙氧基-对二甲苯、α,α'-二-异丙氧基-间二甲苯、α,α'-二-异丙氧基-邻二甲苯、α,α'-二-正丁氧基-对二甲苯、α,α'-二-正丁氧基-间二甲苯、α,α'-二-正丁氧基-邻二甲苯、α,α'-二异丁氧基-对二甲苯、α,α'-二异丁氧基-间二甲苯、α,α'-二异丁氧基-邻二甲苯、α,α'-二-叔丁氧基-对二甲苯、α,α'-二-叔丁氧基-间二甲苯、α,α'-二-叔丁氧基-邻二甲苯。这些能够单独使用或组合使用两种以上。
使上述酚化合物与亚二甲苯基化合物反应时,使用盐酸、硫酸、磷酸、多磷酸等矿酸类;二甲基硫酸、二乙基硫酸、对甲苯磺酸、甲磺酸、乙磺酸等有机羧酸类;三氟甲磺酸等超强酸类;烷烃磺酸型离子交换树脂般的强酸性离子交换树脂类;全氟烷烃磺酸型离子交换树脂般的超强酸性离子交换树脂类(商品名:纳菲,Nafion,杜邦(DuPont)公司制造,“纳菲(Nafion)”为注册商标);天然及合成沸石类;活性白土(酸性白土)类等酸性催化剂,在50℃~250℃下反应至实质上作为原料的亚二甲苯基化合物消失,并反应至反应组成变得恒定为止而得到。反应时间还取决于原料及反应温度,大概为1小时~15小时左右,实际上,通过凝胶渗透色谱法(gel permeation chromatography,GPC)等追踪反应组成的同时确定即可。
含环氧基的丙烯酸共聚物优选为以相对于所得的共聚物成为0.5~6质量%的量,使用丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯作为原料而得到的共聚物。通过该量为0.5质量%以上而容易得到高黏合力(bond force),另一方面,通过为6质量%以下而能够抑制凝胶化。其剩余部分能够使用丙烯酸甲酯、甲基丙烯酸甲酯等具有碳数为1~8的烷基的丙烯酸烷基酯、甲基丙烯酸烷基酯及苯乙烯、丙烯腈等的混合物。这些中,尤其优选为(甲基)丙烯酸乙酯和/或(甲基)丙烯酸丁酯。混合比率优选为考虑共聚物的Tg而进行调整。若Tg小于-10℃,则有B阶段状态下的胶黏剂层5的粘性变大的倾向,且有操作性恶化的倾向。另外,含环氧基的丙烯酸共聚物的玻璃化转变温度(Tg)的上限值例如为30℃。聚合方法并无特别限制,例如可举出珠状聚合(pearl polymerization)、溶液聚合。作为市售的含环氧基的丙烯酸共聚物,例如可举出HTR-860P-3(商品名,长濑化成(Nagase ChemteX)股份有限公司制造)。
含环氧基的丙烯酸共聚物的重均分子量为10万以上,若为该范围,则黏合性及耐热性高,优选为30万~300万,更优选为50万~200万。若重均分子量为300万以下,则能够抑制半导体芯片与对其加以支撑的基板之间的填充性下降。重均分子量是利用凝胶渗透色谱法(GPC)且使用基于标准聚苯乙烯的校准曲线而得的聚苯乙烯换算值。
胶黏剂层5根据需要还可以进一步含有叔胺、咪唑类、季铵盐类等固化促进剂。作为固化促进剂的具体例,可举出2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯。这些可以单独使用一种,也可以同时使用两种以上。
胶黏剂层5根据需要还可以进一步含有无机填料。作为无机填料的具体例,可举出氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶质二氧化硅、非晶质二氧化硅。这些可以单独使用一种,也可以同时使用两种以上。
另外,胶黏剂层5也可以为不含热固化性树脂的方式。例如,在胶黏剂层5包含含反应性基团的(甲基)丙烯酸共聚物的情况下,胶黏剂层5只要包含含反应性基团的(甲基)丙烯酸共聚物、固化促进剂及填料即可。
<切晶粘晶一体型膜的制造方法>
膜10的制造方法依次包括:在基材层1的表面上制作层叠体的工序,上述层叠体由含有通过照射活性能量线而胶接力下降的压敏胶黏剂组合物组成的压敏胶黏剂层及形成于压敏胶黏剂层的表面上的胶黏剂层5;及对层叠体所包含的压敏胶黏剂层的成为第一区域3a的区域照射活性能量线的工序。对成为第一区域3a的区域照射的活性能量线的量例如为10~1000mJ/cm2,也可以为100~700mJ/cm2或200~500mJ/cm2。
上述制造方法中,先制作压敏胶黏剂层与胶黏剂层5的层叠体,之后,对压敏胶黏剂层的特定的区域照射活性能量线的方法。如下上述,也可以对与胶黏剂层5贴合之前的压敏胶黏剂层照射活性能量线而形成第一区域3a。即,膜10的制造方法也可以依次包括:在基材层1的表面上形成压敏胶黏剂层的工序,上述压敏胶黏剂层由通过照射活性能量线而胶接力下降的组合物组成;对压敏胶黏剂层的形成第一区域3a的区域照射活性能量线的工序;及在照射活性能量线后的压敏胶黏剂层3的表面上层叠胶黏剂层5的工序。
<半导体装置及其制造方法>
图7为示意性地表示本实施方式所涉及的半导体装置的剖视图。该图所示的半导体装置100具备:基板70;层叠在基板70的表面上的四个芯片T1、芯片T2、芯片T3、芯片T4;将基板70的表面上的电极(未图示)与四个芯片T1、芯片T2、芯片T3、芯片T4电连接的线W1、线W2、线W3、线W4;及将这些覆盖的密封层50。
基板70例如为有机基板,也可以为引线框架等金属基板。从抑制半导体装置100的翘曲的观点考虑,基板70的厚度例如为70μm~140μm,也可以为80μm~100μm。
四个芯片T1、芯片T2、芯片T3、芯片T4经由胶黏剂片5p的固化物5c而层叠。俯视观察时芯片T1、芯片T2、芯片T3、芯片T4的形状例如为正方形或长方形。芯片T1、芯片T2、芯片T3、芯片T4的面积为9mm2以下,也可以为0.1~4mm2或0.1~2mm2。芯片T1、芯片T2、芯片T3、芯片T4的一边的长度例如为3mm以下,也可以为0.1mm~2.0mm或0.1mm~1.0mm。芯片T1、芯片T2、芯片T3、芯片T4的厚度例如为10μm~170μm,也可以为25μm~100μm。另外,四个芯片T1、芯片T2、芯片T3、芯片T4的一边的长度可以相同,也可以彼此不同,关于厚度也同样如此。
半导体装置100的制造方法包括:准备上述膜10的工序;对膜10的胶黏剂层5粘贴晶片W,并且对压敏胶黏剂层3的第二面F2粘贴切晶环DR的工序;将晶片W单片化成面积为9mm2以下的多个芯片T1、芯片T2、芯片T3、芯片T4的工序(切晶工序);自压敏胶黏剂层3的第一区域3a拾取带有胶黏剂片的芯片Tb(芯片与胶黏剂片5P的层叠体,参考图8(d))的工序;以及经由胶黏剂片5p而将芯片T1安装于基板70上的工序。
参考图8(a)~图8(d)来对带有胶黏剂片的芯片Tb的制作方法的一例进行说明。首先,准备上述膜10。如图8(a)及图8(b)所示,以胶黏剂层5与晶片W的其中一个面相接的方式贴附膜10。另外,对压敏胶黏剂层3的第二面F2贴附切晶环DR。
对晶片W、胶黏剂层5及压敏胶黏剂层3进行切晶。由此,如图8(c)所示,将晶片W单片化而成为芯片T1、芯片T2、芯片T3、芯片T4。胶黏剂层5也单片化而成为胶黏剂片5p。作为切晶方法,可举出使用切晶刀片或激光的方法。另外,还可以在晶片W的切晶之前通过对晶片W进行磨削而薄膜化。
在切晶后,如图8(d)所示,通过在常温或冷却条件下将基材层1扩张而使芯片彼此分开的同时通过利用销42上推而使胶黏剂片5p自压敏胶黏剂层3剥离,并且利用抽吸夹头44抽吸并拾取带有胶黏剂片的芯片Tb,而不对压敏胶黏剂层3照射活性能量线。
参考图9~图11来对半导体封装100的制造方法进行具体说明。首先,如图9所示,经由胶黏剂片5p而将第一层的芯片T1压接于基板70的规定位置。其次,通过加热而使胶黏剂片5p固化。由此,胶黏剂片5p固化而成为固化物5c。从减少孔隙的观点考虑,胶黏剂片5p的固化处理也可以在加压环境下实施。
以与芯片T1对基板70的安装相同的方式,在芯片T1的表面上安装第二层的芯片T2。而且,通过安装第三层及第四层的芯片T3、芯片T4而制作图10所示的结构体60。在利用线W1、线W2、线W3、线W4将芯片T1、芯片T2、芯片T3、芯片T4与基板70电连接后(参考图11),通过密封层50来将半导体元件及线覆盖,由此完成图7所示的半导体装置100。
以上,对本公开的实施方式进行了详细说明,但本发明并不限定于所述实施方式。例如,膜10还可以具备覆盖胶黏剂层5的覆盖膜(未图示)。在上述实施方式中例示了通过活性能量线的照射而压敏胶黏剂层3的第一区域3a的胶接力比第二区域3b降低的方式,但压敏胶黏剂层3也可以为紫外线固化型或感压型。
分选切晶粘晶一体型膜时,可以利用压敏胶黏剂层从胶黏剂层的剥离强度及边缘剥离强度。第一方式所涉及的切晶粘晶一体型膜的分选方法包括:准备两种以上的切晶粘晶一体型膜的工序;及比较两种以上的切晶粘晶一体型膜的压敏胶黏剂层从胶黏剂层的剥离强度及边缘剥离强度的工序。
第二方式所涉及的切晶粘晶一体型膜的分选方法包括:准备多个切晶粘晶一体型膜,该多个切晶粘晶一体型膜在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下测定的压敏胶黏剂层从胶黏剂层的剥离强度为3.0N/25mm以下;及对多个切晶粘晶一体型膜检查边缘剥离强度是否为1.2N以下的工序。该选择方法在如下方面有用,例如当购买了已检查出压敏胶黏剂层从胶黏剂层的剥离强度为3.0N/25mm以下的多个切晶粘晶一体型膜时,从这些切晶粘晶一体型膜有效地选择可以以高成品率制造半导体装置的切晶粘晶一体型膜。另外,在此所述的多个切晶粘晶一体型膜可以为相同种类也可以为不同种类。
实施例
以下,基于实施例对本公开进行更具体的说明,但本发明并不限定于这些实施例。另外,除非另有说明,则化学品全部使用了试剂。
[丙烯酸树脂的合成(制造例1)]
在装备有三一马达(three-onemotor)、搅拌叶片、氮气导入管的容量2000ml的烧瓶中装入以下成分。
·乙酸乙酯(溶剂):635g
·丙烯酸2-乙基己酯:395g
·丙烯酸2-羟基乙酯:100g
·甲基丙烯酸:5g
·偶氮双异丁腈:0.08g
将内容物充分地搅拌至均匀后,以流量500ml/分钟实施60分钟起泡(bubbling),对体系中的溶解氧进行脱气。经1小时升温至78℃,升温后聚合6小时。其次,将反应溶液移至装备有三一马达、搅拌叶片、氮气导入管的容量2000ml的加压釜中,在120℃、0.28mPa下加温4.5小时后,冷却至室温(25℃,以下相同)。
其次,加入490g的乙酸乙酯,进行搅拌并稀释。在其中添加0.10g的作为氨基甲酸酯化催化剂的二月桂酸二辛基锡后,加入48.6g的2-甲基丙烯酰氧基乙基异氰酸酯(昭和电工股份有限公司制造,卡伦茨(Karenz)MOI(商品名)),在70℃下反应6小时后,冷却至室温。接着,加入乙酸乙酯,以丙烯酸树脂溶液中的不挥发成分含量成为35质量%的方式进行调整,得到包含(A)丙烯酸树脂(制造例1)的溶液,上述(A)丙烯酸树脂具有可链聚合的官能团。
将以上述方式得到的包含(A)丙烯酸树脂的溶液在60℃下真空干燥一晚。对由此而得的固体成分,利用全从动元素分析装置(元素(Elemental)公司制造,商品名:瓦瑞奥(vario)EL)进行元素分析,并根据氮含量算出所导入的2-甲基丙烯酰氧基乙基异氰酸酯的含量,结果为0.50mmol/g。
另外,使用以下装置求出(A)丙烯酸树脂的聚苯乙烯换算重均分子量。即,使用东曹股份有限公司制造的SD-8022/DP-8020/RI-8020,柱使用了日立化成股份有限公司制造的凝胶组件(Gel pack)GL-A150-S/GL-A160-S,溶离液使用四氢呋喃来进行GPC测定。其结果,聚苯乙烯换算重均分子量为80万。遵照日本工业标准(Japanese IndustrialStandards,JIS)K0070中记载的方法而测定的羟价及酸值为56.1mgKOH/g及6.5mgKOH/g。将这些的结果汇总示于表1中。
[丙烯酸树脂的合成(制造例2~4)]
替代表1的制造例1所示的原料单体组成而设为制造例2~4所示的原料单体组成,除此以外,以与制造例1相同的方式分别得到了制造例2~4所涉及的(A)丙烯酸树脂的溶液。将有关制造例2~4所涉及的(A)丙烯酸树脂的测定结果示于表1。
<实施例1>
[切晶膜(压敏胶黏剂层)的制作]
通过将以下成分混合而制备压敏胶黏剂层形成用清漆(参考表2)。乙酸乙酯(溶剂)的量是以清漆的总固体成分含量成为25质量%的方式进行了调整。
·(A)丙烯酸树脂溶液(制造例1):100g(固体成分)
·(B)光聚合引发剂(2-羟基-1-{4-[4-(2-羟基-2-甲基-丙酰基)-苄基]-苯基}-2-甲基-丙烷-1-酮(汽巴精化(Ciba Specialty Chemicals)股份有限公司制造,Irgacure127,“Irgacure”为注册商标):1.0g
·(C)交联剂(多官能异氰酸酯,日本聚氨基甲酸酯工业股份有限公司制造,克罗耐德(Coronate)L,固体成分:75%):8.0g(固体成分)
·乙酸乙酯(溶剂)
准备对其中一个面实施了脱模处理的聚对苯二甲酸乙二酯膜(宽度450mm、长度500mm、厚度38μm)。在已实施脱模处理的面,使用敷料器来涂布压敏胶黏剂层形成用清漆后,在80℃下干燥5分钟。由此,得到了由聚对苯二甲酸乙二酯膜及其上所形成的厚度30μm的压敏胶黏剂层组成的层叠体(切晶膜)。
准备对其中一个面实施了电晕处理的聚烯烃膜(宽度450mm、长度500mm、厚度80μm)。将已实施电晕处理的面与上述层叠体的压敏胶黏剂层在室温下粘贴。接着,通过利用橡胶辊进行按压而将压敏胶黏剂层转印至聚烯烃膜(覆盖膜)。之后,在室温下放置3天,由此得到了带有覆盖膜的切晶膜。
[粘晶膜(胶黏剂层A)的制作]
首先,在以下组合物中加入环己酮(溶剂)并进行搅拌混合后,进而使用珠磨机混炼90分钟。
·环氧树脂(YDCN-700-10(商品名),新日铁住金化学股份有限公司制造的甲酚酚醛清漆型环氧树脂,环氧当量210,分子量1200,软化点80℃):14质量份
·酚树脂(米莱斯(Milex)XLC-LL(商品名),三井化学股份有限公司制造,酚树脂,羟基当量175,吸水率1.8%,350℃下的加热重量减少率4%):23质量份
·硅烷偶合剂(NUC A-189(商品名),NUC股份有限公司制造,γ-巯基丙基三甲氧基硅烷):0.2质量份
·硅烷偶合剂(NUC A-1160(商品名),日本尤尼卡(Nippon Unicar)股份有限公司制造,γ-脲基丙基三乙氧基硅烷):0.1质量份
·填料(SC2050-HLG(商品名),雅都玛(Admatechs)股份有限公司制造,二氧化硅,平均粒径0.500μm):32质量份
在以上述方式得到的组合物中加入以下成分后,经过搅拌混合及真空脱气的工序而得到了胶黏剂层形成用清漆。
·含环氧基的丙烯酸共聚物(HTR-860P-3(商品名),长濑化成股份有限公司制造,重均分子量80万):16质量份
·固化促进剂(固唑(Curezol)2PZ-CN(商品名),四国化成工业股份有限公司制造,1-氰基乙基-2-苯基咪唑,“Curezol”为注册商标):0.0.1质量份
准备对其中一个面实施了脱模处理的聚对苯二甲酸乙二酯膜(厚度35μm)。在已实施脱模处理的面,使用敷料器来涂布胶黏剂层形成用清漆后,在140℃下加热干燥5分钟。由此,得到了由聚对苯二甲酸乙二酯膜(载体膜)及其上所形成的厚度25μm的胶黏剂层(B阶段状态)组成的层叠体(粘晶膜)。
[切晶粘晶一体型膜的制作]
将由胶黏剂层及载体膜组成的粘晶膜,连带载体膜而切割为直径335mm的圆形。在室温下对其贴附剥离了聚对苯二甲酸乙二酯膜的切晶膜后,在室温下放置1天。之后,将切晶膜切割为直径370mm的圆形。对于以该方式得到的切晶粘晶一体型膜的胶黏剂层中的与晶片的贴附位置对应的区域(压敏胶黏剂层的第一区域),以如下方式照射了紫外线。即,使用脉冲氙灯(pulsed xenon lamp),以70W、300mJ/cm2的照射量部分照射了紫外线。另外,使用遮光幕,对从膜的中心起内径为318mm的部分照射了紫外线。以该方式得到了用于供至后述的各种评价试验中的多个切晶粘晶一体型膜。
<实施例2>
制作切晶膜时,替代“Irgacure127”而使用了1-羟基-环己基-苯基-酮、汽巴精化(Ciba Specialty Chemicals)股份有限公司制、Irgacure184、“Irgacure”为注册商标)且替代将紫外线的照射量设为300mJ/cm2而将紫外线的照射量设为200mJ/cm2,除此以外,以与实施例1相同的方式得到了多个切晶粘晶一体型膜。
<实施例3>
替代将紫外线的照射量设为200mJ/cm2而将紫外线的照射量设为250mJ/cm2,除此以外,以与实施例2相同的方式得到了多个切晶粘晶一体型膜。
<实施例4>
替代将紫外线的照射量设为200mJ/cm2而将紫外线的照射量设为300mJ/cm2,除此以外,以与实施例2相同的方式得到了多个切晶粘晶一体型膜。
<实施例5>
作为粘晶膜,替代具有胶黏剂层A的粘晶膜而使用了具有以如下方式形成的胶黏剂层B粘晶膜,除此以外,以与实施例4相同的方式得到了多个切晶粘晶一体型膜。
[粘晶膜(胶黏剂层B)的制作]
首先,在以下成分中加入环己酮(溶剂)并进行搅拌混合后,进而使用珠磨机混炼90分钟。
·填料(SC2050-HLG(商品名),雅都玛股份有限公司制造,二氧化硅,平均粒径0.500μm):50质量份
在以上述方式得到的组合物中加入以下成分后,经过搅拌混合及真空脱气的工序而得到了胶黏剂层形成用清漆。
·含环氧基的丙烯酸共聚物(HTR-860P-3(商品名),长濑化成股份有限公司制造,重均分子量80万):100质量份
·固化促进剂(固唑(Curezol)2PZ-CN(商品名),四国化成工业股份有限公司制造,1-氰基乙基-2-苯基咪唑,“Curezol”为注册商标):0.1质量份
<比较例1>
制作切晶膜时,替代使用制造例1所涉及的丙烯酸树脂而使用了制造例2所涉及的丙烯酸树脂,且替代将交联剂的量设为8.0质量份而将交联剂的量设为6.0质量份,除此以外,以与实施例1相同的方式得到了多个切晶粘晶一体型膜。
<比较例2>
制作切晶膜时,替代将交联剂的量设为8.0质量份而将交联剂的量设为6.0质量份,除此以外,以与实施例1相同的方式得到了多个切晶粘晶一体型膜。
<比较例3>
制作切晶膜时,替代使用制造例2所涉及的丙烯酸树脂而使用了制造例3所涉及的丙烯酸树脂,除此以外,以与比较例1相同的方式得到了多个切晶粘晶一体型膜。
<比较例4>
制作切晶膜时,替代使用制造例2所涉及的丙烯酸树脂而使用了制造例4所涉及的丙烯酸树脂,且未照射紫外线,除此以外,以与比较例1相同的方式得到了多个切晶粘晶一体型膜。
[评价试验]
(1)压敏胶黏剂层相对于胶黏剂层的胶接力(30°剥离强度)的测定
通过测定30°剥离强度而对压敏胶黏剂层相对于胶黏剂层的胶接力进行了评价。即,从切晶粘晶一体型膜切出宽度25mm及长度100mm的测定试样。测定试样设为压敏胶黏剂层与胶黏剂层的层叠体。使用拉伸试验机来测定压敏胶黏剂层相对于胶黏剂层的剥离强度。测定条件设为剥离角度30°、拉伸速度60mm/分钟。另外,试样的保存及剥离强度的测定是在温度23℃、相对湿度40%的环境下进行。关于实施例1~实施例5及比较例1~比较例3,将压敏胶黏剂层中的紫外线照射区域的胶接力作为评价对象,关于比较例4,将压敏胶黏剂层的胶接力作为评价对象。
(2)芯片的边缘剥离强度测定
在以下条件下将切晶粘晶一体型膜贴附于硅晶片(直径:12英寸、厚度:50μm)及切晶环。贴附硅晶片及切晶环后的切晶粘晶一体型膜的MD方向的延伸为1.0~1.3%左右。
<贴附条件>
·贴附装置:DFM2800(迪思科(DISCO)公司制)
·贴附温度:70℃
·贴附速度:10mm/s
·贴附张力等级:6级
接着,通过刀片切割将带有切晶粘晶一体型膜的硅晶片单片化成多个带有胶黏剂片的芯片(尺寸2mm×2mm)。
<切晶条件>
·切晶机:DFD6361(迪思科(DISCO)公司制)
·刀片:ZH05-SD4000-N1-70-BB(迪思科(DISCO)公司制)
·刀片转速:40000rpm
·切晶速度:30mm/秒钟
·刀片高度:90μm
·从压敏胶黏剂层的表面的切入深度:20μm
·切晶时的水量
刀片冷却器:1.5L/分钟
淋浴:1.0L/分钟
喷雾:1.0L/分钟
从切晶经过一天后,在以下测定条件下,从基材层侧压入带有胶黏剂片的芯片而测定了带有胶黏剂片的芯片的边缘剥离强度(参考图2(c))。另外,在测定前用油性笔在相当于芯片的中央部的基材层的表面进行了标记。用尺子测量芯片的中央部并进行了确定。以N=10进行了测定。对一个芯片进行测定后,将间隔隔开三个芯片量而进行了下一测定(参考图4)。
<测定条件>
·测定装置:小型台式试验机EZ-SX(岛津制作所股份有限公司制)
·称重传感器:50N
·压入夹具:ZTS系列附属附件(形状:圆锥型、今田股份有限公司制)
·压入速度:60mm/分钟
·温度:23℃
·湿度:45±10%
(3)切晶性的评价
通过以下评价基准对切晶性进行了评价。将结果示于表2、表3。
<芯片飞散>
将在切晶后完全未产生芯片飞散时设为“A”,将未产生芯片飞散但在胶黏剂层与压敏胶黏剂层之间即使发现浸入略微的切割水时设为“B”,将产生了一次以上的芯片的飞散时设为“C”。
<裂纹>
利用显微镜来确认切晶后的芯片的切割截面,对是否产生了芯片的缺陷进行评价。观察10个芯片的切割截面,将完全未确认到缺陷的试样评价为“A”,将即使略微也确认到缺陷的试样评价为“B”。
(4)拾取性的评价
测定上述边缘剥离强度后,在以下条件下拾取了100个带有胶黏剂片的芯片。
<拾取条件>
·粘晶装置:DB800-HSD(日立高新技术股份优选公司制)
·上推销:EJECTOR NEEDLE SEN2-83-05(直径:0.7mm、前端形状:半径350μm的半球、麦克机械(Micromechanics)公司制)
·上推高度:150μm
·上推速度:1mm/秒钟
另外,在芯片的中央部配置有一根上推销。将拾取的成功率为100%时设为“A”,80%以上且小于100%时设为“B”,60%以上且小于80%时设为“C”,小于60%时设为“D”。将结果示于表2、表3。
如表2及表3所示,实施例1~实施例5的拾取性比比较例1~比较例4良好。具体而言,与实施例1~实施例4相比,尽管比较例1的30°剥离强度为大幅低的值,但由于边缘剥离强度高为1.6N而拾取性显著恶化。并且,在比较例2中,虽然30°剥离强度为2.6N/25mm且为3.0N/25mm以下,但边缘剥离强度为1.3N而相对较高,因此认为拾取性恶化。另一方面,在比较例3及比较例4中,尽管边缘剥离强度比实施例1~实施例4的值低,但由于30°剥离强度为3.0N/25mm以上而认为拾取性恶化。并且,从实施例1~实施例5的结果可知,若边缘剥离强度在1.2N以下,则30°剥离强度在3.0N/25mm以下的广范围内而可得到良好的拾取性。
关于切晶性,在比较例1中30°剥离强度过低,因此在胶黏剂层与压敏胶黏剂层之间发现切割水浸入的痕迹,而且在芯片侧面产生了裂纹。关于裂纹,认为是因为因切割水浸入切晶中而芯片移动,并与刀片接触而产生。
从以上结果可知,在使用了小芯片的半导体装置制造工艺中,通过将边缘剥离强度设为1.2N以下并且将30°剥离强度设为3.0N/25m以下,能够将切晶性及拾取性这两个方面实现充分的高水平。
产业上的可利用性
根据本公开,可提供一种考虑了小芯片(面积为9mm2以下)的边缘剥离及界面剥离的影响的切晶粘晶一体型膜的评价方法及分选方法。并且,根据本公开,可提供一种考虑了小芯片的边缘剥离及界面剥离的影响的拾取性的评价方法、以及小芯片的拾取性优异的切晶粘晶一体型膜及使用了该切晶粘晶一体型膜的半导体装置的制造方法。
符号说明
1-基材层,3-压敏胶黏剂层,3a-第一区域,3b-第二区域,5-胶黏剂层,5p-胶黏剂片,5c-固化物,10-切晶粘晶一体型膜,42-销,44-抽吸夹头,50-密封层,60-结构体,70-基板,80-支撑板,100-半导体装置,A-测定区域,DR-切晶环,F1-第一面,F2-第二面,M-标记,N-切口,P-压入夹具,Rw-区域,T1、T2、T3、T4、Ts-芯片,Ta、Tb-带有胶黏剂片的芯片,W-晶片,Ws-硅晶片,W1、W2、W3、W4-线。
Claims (8)
1.一种切晶粘晶一体型膜的评价方法,其包括:
(A)准备作为评价对象的切晶粘晶一体型膜的工序,所述切晶粘晶一体型膜具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与所述基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖所述压敏胶黏剂层的所述第二面的中央部的方式配置;
(B)在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下,测定所述压敏胶黏剂层从所述胶黏剂层的剥离强度的第一测定工序;
(C)对所述切晶粘晶一体型膜的所述胶黏剂层粘贴厚度为50μm的硅晶片,并且对所述压敏胶黏剂层的所述第二面粘贴切晶环的工序;
(D)将所述硅晶片及所述胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的所述带有胶黏剂片的芯片的工序;及
(E)在温度23℃下从所述基材层侧以60mm/分钟的速度压入所述带有胶黏剂片的芯片的中央部,并测定所述带有胶黏剂片的芯片的边缘从所述压敏胶黏剂层剥离时的边缘剥离强度的第二测定工序,
在所述第一测定工序中测定的所述剥离强度为3.0N/25mm以下,并且在所述第二测定工序中测定的所述边缘剥离强度为1.2N以下时,判定所述切晶粘晶一体型膜具有良好的拾取性。
2.一种拾取性的评价方法,其包括:
(i)准备作为评价对象的切晶粘晶一体型膜的工序,所述切晶粘晶一体型膜具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与所述基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖所述压敏胶黏剂层的所述第二面的中央部的的方式配置;
(ii)在剥离角度30°的条件下测定所述压敏胶黏剂层从所述胶黏剂层的剥离强度的第一测定工序;
(iii)对所述切晶粘晶一体型膜的所述胶黏剂层粘贴厚度10~100μm的晶片,并且对所述压敏胶黏剂层的所述第二面粘贴切晶环的工序;
(iv)将所述晶片及所述胶黏剂层单片化成面积为9mm2以下的带有胶黏剂片的芯片的工序;及
(v)从所述基材层侧压入所述带有胶黏剂片的芯片的中央部,并测定所述带有胶黏剂片的芯片的边缘从所述压敏胶黏剂层剥离时的边缘剥离强度的第二测定工序。
3.一种切晶粘晶一体型膜,其具备:
基材层;
压敏胶黏剂层,具有与所述基材层相向的第一面及其相反侧的第二面;及
胶黏剂层,以覆盖所述压敏胶黏剂层的所述第二面的中央部的方式配置,
在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下测定的所述压敏胶黏剂层从所述胶黏剂层的剥离强度为3.0N/25mm以下,并且经过以下工序而测定的边缘剥离强度为1.2N以下,
<边缘剥离强度的测定>
·对所述胶黏剂层粘贴厚度为50μm的硅晶片,并且对所述压敏胶黏剂层的所述第二面粘贴切晶环的工序
·将所述硅晶片及所述胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的所述带有胶黏剂片的芯片的工序
·在温度23℃下从所述基材层侧以60mm/分钟的速度压入所述带有胶黏剂片的芯片的中央部,并测定所述带有胶黏剂片的芯片的边缘从所述压敏胶黏剂层剥离时的边缘剥离强度的工序。
4.根据权利要求3所述的切晶粘晶一体型膜,其应用于半导体装置制造工艺,所述工序包括将晶片及胶黏剂层单片化成面积为9mm2以下的多个带有胶黏剂片的芯片的工序。
5.根据权利要求4所述的切晶粘晶一体型膜,其中,
在所述单片化的工序中,通过刀片切割而得到所述多个带有胶黏剂片的芯片。
6.一种半导体装置的制造方法,其包括:
准备权利要求3至5中任一项所述的切晶粘晶一体型膜的工序;
对所述切晶粘晶一体型膜的所述胶黏剂层粘贴晶片,并且对所述压敏胶黏剂层的所述第二面粘贴切晶环的工序;
将所述晶片及所述胶黏剂层单片化成面积为9mm2以下的多个带有胶黏剂片的芯片的工序;
从所述压敏胶黏剂层拾取所述带有胶黏剂片的芯片的工序;及
将所述带有胶黏剂片的芯片安装于基板或其他芯片上的工序。
7.一种切晶粘晶一体型膜的分选方法:其包括:
准备两种以上的切晶粘晶一体型膜的工序,所述两种以上的切晶粘晶一体型膜分别具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与所述基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖所述压敏胶黏剂层的所述第二面的中央部的的方式配置;
比较所述两种以上的切晶粘晶一体型膜的所述压敏胶黏剂层从所述胶黏剂层的剥离强度及边缘剥离强度的工序。
8.一种切晶粘晶一体型膜的分选方法,其包括:
准备多个切晶粘晶一体型膜的工序,所述多个切晶粘晶一体型膜分别具备基材层、压敏胶黏剂层及胶黏剂层,所述压敏胶黏剂层具有与所述基材层相向的第一面及其相反侧的第二面,所述胶黏剂层以覆盖所述压敏胶黏剂层的所述第二面的中央部的方式配置,在温度23℃、剥离角度30°及剥离速度60mm/分钟的条件下测定的所述压敏胶黏剂层从所述胶黏剂层的剥离强度为3.0N/25mm以下;及
对所述多个切晶粘晶一体型膜检查边缘剥离强度是否为1.2N以下的工序,所述边缘剥离强度经过以下工序测定,
<边缘剥离强度的测定>
·对所述胶黏剂层粘贴厚度为50μm的硅晶片,并且对所述压敏胶黏剂层的所述第二面粘贴切晶环的工序
·将所述硅晶片及所述胶黏剂层单片化成多个带有胶黏剂片的芯片而得到边的长度为2mm的正方形的所述带有胶黏剂片的芯片的工序
·在温度23℃下从所述基材层侧以60mm/分钟的速度压入所述带有胶黏剂片的芯片的中央部,并测定所述带有胶黏剂片的芯片的边缘从所述压敏胶黏剂层剥离时的边缘剥离强度的工序。
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CN104946149A (zh) * | 2014-03-31 | 2015-09-30 | 日东电工株式会社 | 带有切割片的芯片接合膜、半导体装置及半导体装置的制造方法 |
JP2017139409A (ja) * | 2016-02-05 | 2017-08-10 | 日立化成株式会社 | ダイボンドダイシングシート |
JP2018107386A (ja) * | 2016-12-28 | 2018-07-05 | 日立化成株式会社 | ダイシング用粘着シート及びその製造方法、ダイシングダイボンディング一体型シート、並びに、半導体装置の製造方法 |
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