WO2019184224A1 - 显示面板及制作显示面板用掩模板 - Google Patents
显示面板及制作显示面板用掩模板 Download PDFInfo
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- WO2019184224A1 WO2019184224A1 PCT/CN2018/102547 CN2018102547W WO2019184224A1 WO 2019184224 A1 WO2019184224 A1 WO 2019184224A1 CN 2018102547 W CN2018102547 W CN 2018102547W WO 2019184224 A1 WO2019184224 A1 WO 2019184224A1
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- apertures
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- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 230000007704 transition Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 abstract description 17
- 238000001704 evaporation Methods 0.000 abstract description 17
- 229910001111 Fine metal Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000002184 metal Substances 0.000 description 10
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- the present application relates to the field of display technologies, and in particular, to a display panel and a mask for fabricating the same.
- the pixel array is generally prepared by an evaporation process, for example, by precisely depositing a light-emitting layer onto a substrate by a precision metal mask to form a high-density pixel array.
- the number of openings of the reticle is increasing, and the density of the openings is increasing, resulting in a smaller and smaller distance between the openings, and the strength of the reticle is reduced.
- the conventional scheme usually changes the shape or arrangement of the pixels to achieve the purpose of increasing the connection bridge area, thereby improving the strength of the mask.
- the results obtained are usually limited.
- the present application provides a display panel and a mask for manufacturing the display panel, which can improve the strength of the edge of the mask, thereby improving the precision of pixel evaporation, and avoiding the problem of uneven color development at the edge of the display panel.
- the application provides a mask for manufacturing a display panel, including:
- a display area a plurality of first through holes arranged at intervals;
- a transition display area is disposed at a periphery of the display area, and a plurality of second through holes are provided at intervals;
- the density of the second through hole is smaller than the density of the first through hole.
- the mask plate changes the density of the second via hole of the edge transition display region, reduces the density of the second via hole in the transition display region, and helps to increase the second portion without affecting the display effect.
- the distance between the through holes increases the area of the connecting bridge between the second through holes, increasing the strength of the edge region of the mask.
- the geometric center of the first through hole is a first hole, and the geometric center of the second through hole is a second hole;
- the aperture of the second through hole is smaller than the aperture of the first through hole.
- first hole core and the second hole core are arranged in a row in a horizontal direction, and the first hole core and the second hole core are arranged in a row in a vertical direction;
- a distance between two adjacent first holes in the horizontal direction is equal, and a distance between two adjacent first holes in the vertical direction is equal;
- the distance between the two second holes adjacent in the horizontal direction is equal, and the distance between the two first holes adjacent in the vertical direction is equal.
- a distance between two of the first apertures adjacent in the horizontal direction is equal to a distance between two of the second apertures adjacent in the horizontal direction
- the distance between the two first holes adjacent in the vertical direction is equal to the distance between the two second holes adjacent in the vertical direction.
- the second through hole closest to the display area is the first row of through holes of the transition display area, and the transition display area is sequentially in a direction away from the display area. a second through hole to a Nth through hole, wherein the N is a positive integer;
- a row of the second through holes closest to the display area is a first column of through holes of the transition display area, and in a direction away from the display area, a second column of through holes of the transition display area is sequentially a M-th through hole, wherein the M is a positive integer;
- the apertures of the Nth row via and the Mth column via are at least 0.3 times the aperture of the first via.
- the apertures of the first row of vias to the Nth row of vias are reduced by a first predetermined rule, and the first column of vias are to the of the Mth column of vias The aperture is reduced by a second predetermined rule.
- the number of rows and the number of columns of the second via hole are the same.
- the second through hole is two rows and two columns
- the apertures of the first row of via holes and the first column of via holes are 0.6-0.9 times the aperture of the first via hole;
- the apertures of the second row of vias and the second column of vias are 0.3-0.6 times the aperture of the first via.
- the second through hole is three rows and three columns
- the apertures of the first row of via holes and the first column of via holes are 0.7-0.9 times the aperture of the first via hole;
- the apertures of the second row of through holes and the second row of through holes are 0.5-0.7 times of the aperture of the first through hole;
- the apertures of the third row of vias and the third row of vias are 0.3-0.5 times the aperture of the first via.
- the second through holes are four rows and four columns
- the apertures of the first row of via holes and the first column of via holes are 0.8-0.9 times the aperture of the first via hole;
- the apertures of the second row of through holes and the second row of through holes are 0.6-0.8 times the aperture of the first through hole;
- the apertures of the third row of through holes and the third row of through holes are 0.4 to 0.6 times the aperture of the first through hole;
- the apertures of the fourth row of vias and the fourth row of vias are 0.3-0.4 times the aperture of the first via.
- the second through hole is five rows and five columns
- the apertures of the first row of via holes and the first column of via holes are 0.8-0.9 times the aperture of the first via hole;
- the apertures of the second row of vias and the second row of vias are 0.7-0.8 times the aperture of the first via
- the apertures of the third row of through holes and the third row of through holes are 0.6-0.7 times of the aperture of the first through hole;
- the apertures of the fourth row of through holes and the fourth row of through holes are 0.4-0.6 times the aperture of the first through hole;
- the apertures of the fifth row of via holes and the fifth row of via holes are 0.3 to 0.4 times the aperture of the first via hole.
- the number of rows and the number of columns of the second via are different.
- the second through holes are three rows and four columns
- the aperture of the first row of through holes is 0.7-0.9 times of the aperture of the first through hole; the aperture of the second row of through holes is 0.5-0.7 times of the aperture of the first through hole;
- the pore diameter of the pore is 0.3-0.5 times the pore diameter of the first through hole;
- the aperture of the first column through hole is 0.8-0.9 times the aperture of the first through hole; the aperture of the second column through hole is 0.6-0.8 times the aperture of the first through hole; the third The aperture of the column through hole is 0.4-0.6 times the aperture of the first through hole; and the aperture of the fourth column through hole is 0.3-0.4 times the aperture of the first through hole.
- the application also provides a display panel comprising:
- Pixels arranged in an array on the display substrate are arranged in an array on the display substrate
- the pixel is produced by a mask as described above.
- FIG. 1 is a schematic structural view of a fine metal mask in a conventional scheme
- FIG. 2 is a partial enlarged view of a display area opening and a transition display area opening of a fine metal mask in a conventional scheme
- FIG 3 is a schematic structural view of a mask plate of one embodiment of the present application.
- FIG. 1 is a schematic structural view of a fine metal mask in a conventional scheme.
- the fine metal mask 100 is divided into a display area 300 and a transition display area 200.
- the display area 300 is a pixel evaporation area of the main display area of the display panel
- the transition display area 200 is a transition area of the display area 300 and the edge of the fine metal mask.
- the fine metal mask 100 is provided with openings arranged in an array for vapor-depositing the evaporation material onto the array substrate.
- 2 is a partial enlarged view of a display area opening and a transition display area opening of a fine metal mask in a conventional scheme.
- the openings of the display area 300 and the transition display area 200 are identical, that is, the shape of the opening, the size of the opening, and the density of the opening are uniform.
- the conventional solution usually fixes the fine metal mask to a metal frame, and then fixes the fine metal mask with the metal frame on the array substrate, and then performs Evaporation.
- the fine metal mask is fixed in the metal frame, it is necessary to firstly use a suitable force to stretch the fine metal mask, and then apply a suitable opposing force on the metal frame to deform the metal frame, and finally the fineness of the stretching.
- the metal mask is fixed on the metal frame to which the opposing force is applied, and the fine metal mask is tightened by the restoring force generated by the deformation of the metal frame, so that the fine metal mask does not sag during the evaporation process.
- This process of pre-tensioning a fine metal mask is commonly referred to as a web process.
- the conventional scheme In general, in order to improve the precision of evaporation, the conventional scheme also needs to perform PMA (pixel position accuracy) debugging to realize the positioning of the fine mask and the array substrate. Therefore, in the process of drawing nets, it is necessary to find a suitable tensile force and a resistance force for deforming the metal frame, and to adjust the strength by the test of the physical object to meet the needs of the vapor deposition precision.
- the openings of the fine metal mask are more and more dense, the distance between the openings, that is, the size of the connecting bridge between the openings, becomes smaller and smaller, resulting in the fine metal mask being easily damaged in the web process, especially It is the fixed part of the edge. Due to the concentrated force, the evaporation edge area is prone to breakage, which causes problems such as vapor deposition offset and edge color mixing, which increases the difficulty and cost of the evaporation process and affects the evaporation process. Preparation efficiency.
- the present application provides a reticle having a special structure.
- the mask provided by the present application has high strength, thereby improving the precision of pixel evaporation and avoiding the problem of uneven color development at the edge of the display panel.
- 3 is a schematic structural view of a mask plate of one embodiment of the present application.
- the mask 500 is used to fabricate a display panel.
- the mask 500 includes a display area 520 and a transition display area 510.
- the display area 520 is configured to evaporate pixels to the main display area of the display panel, and the display area 520 is provided with a plurality of first through holes 521 disposed at intervals.
- the transition display area 510 is disposed at a periphery of the display area 520, and the transition display area 510 is provided with a plurality of second through holes 511 spaced apart.
- the transition display area 510 is used for transition between the display area 520 and the edge of the reticle 500.
- the density of the second through hole 511 is smaller than the density of the first through hole 521. That is, the percentage of the area occupied by the second through hole 511 in the transition display area 510 of the mask 500 is smaller than the area occupied by the first through hole 521 in the display area 520 of the mask 500.
- the shape of the opening of the display area 300 and the transition display area 200, the size of the opening, and the density of the opening are identical. Therefore, the edge of the mask 100 is easily broken, resulting in a problem of uneven color development in the edge region of the display panel produced by the mask. Therefore, in the present application, changing the density of the second through hole 511 of the transition display area 510 reduces the density of the second through hole 511 in the transition display area 510 without affecting the display effect. It is helpful to increase the distance between the second through holes 511, thereby increasing the area of the connecting bridge between the second through holes 511, and improving the strength of the edge region of the mask 500.
- the geometric center of the first through hole 521 of the display area 520 is a first hole center.
- the geometric center of the second through hole 511 of the transition display area 510 is a second hole center.
- the arrangement of the first hole in the display area is the same as the arrangement of the second hole in the filter display area, and the aperture of the second through hole 511 is smaller than the first through hole.
- the present application reduces the second through hole 511 in the transition display area 510 by reducing the aperture of the second through hole 511 and increasing the distance between the outer edges of the adjacent second through holes 511.
- the density inside is increased to increase the area of the connecting bridge between the second through holes 511, and the edge strength of the mask 500 is increased.
- the first and second holes are arranged in a row in a horizontal direction.
- the first hole core and the second hole core are arranged in a row in a vertical direction.
- the distance between the two first holes adjacent in the horizontal direction is equal, and the distance between the two first holes adjacent in the vertical direction is equal;
- the distance between the two adjacent second holes in the horizontal direction is equal, and the distance between the two first holes adjacent in the vertical direction is equal.
- a distance between two of the first apertures adjacent in the horizontal direction is equal to a distance between two of the second apertures adjacent in the horizontal direction; in the vertical direction
- a distance between two adjacent ones of the first holes is equal to a distance between two of the second holes adjacent in the vertical direction.
- the first hole core and the second hole core are arranged in the same array manner, except that the aperture of the second through hole 511 in the transition display region 510 is reduced, adjacent The distance between the second through holes 511 increases, so that the density of the second through holes 511 in the transition display region 510 decreases.
- the present application simply and conveniently changes the structure of the mask 500, and further reduces the manufacturing process difficulty of the mask 500, improves the strength of the mask 500, and helps to improve the stability of the web process.
- a direction extending away from the display area 520 in a horizontal direction is a first direction (X)
- a direction extending away from the display area 520 in a vertical direction is The second direction (Y).
- the second through holes 511 are sequentially arranged in the first direction with a first column through hole, a second column through hole, a Mth column through hole, wherein M is a positive integer.
- the first row of through holes is a row of second through holes closest to the display area 520 in the first direction
- the Mth column of the through holes is the second line of the second row farthest from the display area 520 in the first direction. hole.
- the second through holes 511 are sequentially arranged with the first row of through holes, the second row of through holes, and the Nth row of through holes in the second direction, wherein N is a positive integer.
- the first row of via holes is a row of second via holes closest to the display region 520 in the second direction
- the Nth row of via holes is a row of second pass farthest from the display region 520 in the second direction. hole.
- the apertures of the Nth row via and the Mth column via are at least 0.3 times the aperture of the first via 521 of the display region 520 to avoid the edge of the mask 500.
- the aperture of the second through hole 511 is too small, which has a great influence on the actual effect of the edge region.
- an aperture of the first row of through holes to the Nth row of through holes is reduced according to a first predetermined rule, and an aperture of the first column of through holes to the Mth column of through holes Reduced by the second preset rule.
- the first preset rule and the second preset rule may be the same or different.
- the first preset rule may be adjusted according to the number of rows of the second through holes.
- the second preset rule may be adjusted according to the number of columns of the second through holes.
- the first predetermined rule is that the aperture decreases from the first row of through holes toward the Nth row of through holes
- the second predetermined rule is that the aperture is from the first column of through holes toward the first M The column through holes are reduced.
- the number of rows and the number of columns of the second vias of the transition display region 510 may be the same.
- the apertures of the first row of through holes and the first column of through holes are 0.6- of the aperture of the first through hole 521. 0.9 times.
- the apertures of the second row of vias and the second row of vias are 0.3-0.6 times the aperture of the first vias 521.
- the apertures of the first row of through holes and the first column of through holes are 0.7- of the aperture of the first through hole 521. 0.9 times.
- the apertures of the second row of vias and the second row of vias are 0.5-0.7 times the aperture of the first vias 521.
- the apertures of the third row of vias and the third row of vias are 0.3-0.5 times the aperture of the first vias 521.
- the apertures of the first row of through holes and the first column of through holes are 0.8- of the aperture of the first through hole 521. 0.9 times.
- the apertures of the second row of vias and the second row of vias are 0.6-0.8 times the aperture of the first vias 521.
- the apertures of the third row of vias and the third row of vias are 0.4-0.6 times the aperture of the first vias 521.
- the apertures of the fourth row of vias and the fourth row of vias are 0.3-0.4 times the aperture of the first vias 521.
- the apertures of the first row of through holes and the first column of through holes are 0.8-0.9 of the aperture of the first through hole 521. Times.
- the apertures of the second row of vias and the second row of vias are 0.7-0.8 times the aperture of the first vias 521.
- the apertures of the third row of vias and the third row of vias are 0.6-0.7 times the aperture of the first vias 521.
- the apertures of the fourth row of vias and the fourth row of vias are 0.4-0.6 times the aperture of the first vias 521.
- the apertures of the fifth row through hole and the fifth column through hole are 0.3-0.4 times the aperture of the first through hole 521.
- the number of rows and the number of columns of the second through holes of the transition display area 510 may be different.
- the law of variation of the aperture of the second through hole 511 is also different, by providing an optimum gradient of the aperture of the second through hole 511 for different number of rows and columns. Rules, an optimal transition to the display effect of the transition display area 510 can be achieved.
- the number of rows of the second through holes 511 may not be equal to the number of columns of the second through holes 511. That is to say, the number of rows and the number of columns of the second through holes 511 in the transition display area 510 may be different.
- the aperture variation rule of the second through hole 511 can refer to the above scheme.
- the transition display area 510 may be arranged in three rows and four columns.
- the second through holes 511 of the three rows may be disposed such that the aperture of the first row of through holes is 0.7-0.9 times the aperture of the first through hole 521; and the aperture of the second row of through holes is the
- the through hole 521 has a hole diameter of 0.5-0.7 times; the third row through hole has a hole diameter of 0.3-0.5 times the hole diameter of the first through hole 521.
- the second row of the second through holes 511 may be disposed such that the aperture of the first column through hole is 0.8-0.9 times the aperture of the first through hole 521; and the aperture of the second column through hole is the a through hole 521 is 0.6-0.8 times the aperture; the aperture of the third column through hole is 0.4-0.6 times the aperture of the first through hole 521; and the aperture of the fourth column through hole is the first pass
- the pores 521 have a pore size of 0.3-0.4 times.
- the present application also provides a display panel including a display substrate and pixels arranged in an array on the display substrate.
- the pixels are fabricated from a mask as previously described.
- the display panel has high resolution and high pixel evaporation precision, which can avoid the problem of uneven display of edges on the display panel.
- the reticle 500 of the present application can increase the design margin in the horizontal direction and the vertical direction.
- the result of PPA (pixel position accuracy) debugging of the mask of the present application is superior to that of the conventional scheme.
- the strength of the mask 100 is improved, and the problem of uneven color development at the edge of the display panel is also significantly reduced.
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Abstract
Description
Claims (14)
- 一种掩模板,用于制作显示面板,其中,包括:显示区,开设有多个间隔设置的第一通孔;以及过渡显示区,设置于所述显示区的周边,开设有多个间隔设置的第二通孔;其中所述第二通孔的密度小于所述第一通孔的密度。
- 根据权利要求1所述的掩模板,其中,所述第一通孔的几何中心为第一孔心,所述第二通孔的几何中心为第二孔心;所述第一孔心在所述显示区的排布方式与所述第二孔心在所述过滤显示区的排布方式相同;所述第二通孔的孔径小于所述第一通孔的孔径。
- 根据权利要求2所述的掩模板,其中,所述第一孔心和所述第二孔心沿水平方向成行排布,所述第一孔心和所述第二孔心沿竖直方向成列排布;在所述水平方向上相邻的两个所述第一孔心之间的距离相等,在所述竖直方向上相邻的两个所述第一孔心之间的距离相等;在所述水平方向上相邻的两个所述第二孔心之间的距离相等,在所述竖直方向上相邻的两个所述第一孔心之间的距离相等。
- 根据权利要求3所述的掩模板,其中,在所述水平方向上相邻的两个所述第一孔心之间的距离等于在所述水平方向上相邻的两个所述第二孔心之间的距离;在所述竖直方向上相邻的两个所述第一孔心之间的距离等于在所述竖直方向上相邻的两个所述第二孔心之间的距离。
- 根据权利要求4所述的掩模板,其中,最靠近所述显示区的一行所述第二通孔为所述过渡显示区的第一行通孔,沿远离所述显示区的方向,依次为所述过渡显示区的第二行通孔至第N行通孔,其中所述N为正整数;最靠近所述显示区的一列所述第二通孔为所述过渡显示区的第一列通孔, 沿远离所述显示区的方向,依次为所述过渡显示区的第二列通孔至第M列通孔,其中所述M为正整数;所述第N行通孔和所述第M列通孔的孔径至少为所述第一通孔孔径的0.3倍。
- 根据权利要求5所述的掩模板,其中,所述第一行通孔至所述第N行通孔的孔径按第一预设规则减小,且所述第一列通孔至所述第M列通孔的孔径按第二预设规则减小。
- 根据权利要求6所述的掩模板,其中,所述第二通孔的行数和列数相同。
- 根据权利要求7所述的掩模板,其中,当所述第二通孔为两行两列时,所述第一行通孔和所述第一列通孔的孔径为所述第一通孔孔径的0.6-0.9倍;所述第二行通孔和所述第二列通孔的孔径为所述第一通孔孔径的0.3-0.6倍。
- 根据权利要求7所述的掩模板,其中,当所述第二通孔为三行三列时,所述第一行通孔和所述第一列通孔的孔径为所述第一通孔孔径的0.7-0.9倍;所述第二行通孔和所述第二列通孔的孔径为所述第一通孔孔径的0.5-0.7倍;第三行通孔和第三列通孔的孔径为所述第一通孔孔径的0.3-0.5倍。
- 根据权利要求7所述的掩模板,其中,当所述第二通孔为四行四列时,所述第一行通孔和所述第一列通孔的孔径为所述第一通孔孔径的0.8-0.9倍;所述第二行通孔和所述第二列通孔的孔径为所述第一通孔孔径的0.6-0.8倍;第三行通孔和第三列通孔的孔径为所述第一通孔孔径的0.4-0.6倍;第四行通孔和第四列通孔的孔径为所述第一通孔孔径的0.3-0.4倍。
- 根据权利要求7所述的掩模板,其中,当所述第二通孔为五行五列时,所述第一行通孔和所述第一列通孔的孔径为所述第一通孔孔径的0.8-0.9倍;所述第二行通孔和所述第二列通孔的孔径为所述第一通孔孔径的0.7-0.8倍;第三行通孔和第三列通孔的孔径为所述第一通孔孔径的0.6-0.7倍;第四行通孔和第四列通孔的孔径为所述第一通孔孔径的0.4-0.6倍;第五行通孔和第五列通孔的孔径为所述第一通孔孔径的0.3-0.4倍。
- 根据权利要求6所述的掩模板,其中,所述第二通孔的行数和列数不同。
- 根据权利要求12所述的掩模板,其中,当所述第二通孔为三行四列时,所述第一行通孔的孔径为所述第一通孔孔径的0.7-0.9倍;所述第二行通孔的孔径为所述第一通孔孔径的0.5-0.7倍;第三行通孔的孔径为所述第一通孔孔径的0.3-0.5倍;所述第一列通孔的孔径为所述第一通孔孔径的0.8-0.9倍;所述第二列通孔的孔径为所述第一通孔孔径的0.6-0.8倍;所述第三列通孔的孔径为所述第一通孔孔径的0.4-0.6倍;所述第四列通孔的孔径为所述第一通孔孔径的0.3-0.4倍。
- 一种显示面板,其中,包括:显示基板;和在所述显示基板上阵列排布的像素;其中,所述像素由权利要求1-13中任一项所述的掩模板制作而成。
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CN109207920B (zh) * | 2018-11-12 | 2021-02-09 | 京东方科技集团股份有限公司 | 掩模版 |
CN109487206B (zh) * | 2018-12-11 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | 掩膜版及采用该掩膜版的掩膜装置 |
CN109722630B (zh) * | 2019-01-09 | 2020-01-14 | 昆山工研院新型平板显示技术中心有限公司 | 掩模单元及具有该掩模单元的掩模板组件 |
CN109504938B (zh) * | 2019-01-09 | 2020-04-17 | 昆山国显光电有限公司 | 一种掩膜单元及其制作方法、掩膜版 |
CN110760790A (zh) * | 2019-02-28 | 2020-02-07 | 云谷(固安)科技有限公司 | 掩膜板及掩膜组件 |
CN110335888A (zh) * | 2019-04-24 | 2019-10-15 | 深圳市华星光电半导体显示技术有限公司 | 显示面板以及显示装置 |
CN111834395A (zh) | 2019-09-30 | 2020-10-27 | 昆山国显光电有限公司 | 透明显示面板、显示装置及其显示面板 |
CN110718578B (zh) * | 2019-10-31 | 2022-10-21 | 武汉天马微电子有限公司 | 一种显示面板及其制备方法、显示装置、掩膜板 |
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