WO2019181067A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
WO2019181067A1
WO2019181067A1 PCT/JP2018/043203 JP2018043203W WO2019181067A1 WO 2019181067 A1 WO2019181067 A1 WO 2019181067A1 JP 2018043203 W JP2018043203 W JP 2018043203W WO 2019181067 A1 WO2019181067 A1 WO 2019181067A1
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WIPO (PCT)
Prior art keywords
substrate
processing
processing tank
substrates
arrangement direction
Prior art date
Application number
PCT/JP2018/043203
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English (en)
French (fr)
Japanese (ja)
Inventor
昌幸 折坂
佐藤　雅伸
基村　雅洋
一郎 光吉
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020227011423A priority Critical patent/KR102429858B1/ko
Priority to CN201880091453.6A priority patent/CN111886675B/zh
Priority to KR1020207022192A priority patent/KR102388646B1/ko
Publication of WO2019181067A1 publication Critical patent/WO2019181067A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, an organic EL substrate, an FED (Field-Emission Display) substrate, an optical display substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask.
  • the present invention relates to a substrate processing apparatus for processing various substrates (hereinafter simply referred to as substrates) such as a substrate and a solar cell substrate with a processing liquid.
  • a processing tank for storing a processing liquid, storing a plurality of substrates and performing processing, and a liquid flow dispersion member disposed at the bottom of the processing tank are provided.
  • the treatment is performed by immersing (see, for example, Patent Document 1).
  • the liquid flow dispersion member provided in this apparatus disperses the flow of the treatment liquid in the treatment tank into a flow on the bottom side toward the center of the treatment tank and a flow upward obliquely toward the center of the treatment tank.
  • JP 2017-130483 A (FIGS. 1 and 2)
  • the conventional example having such a configuration has the following problems.
  • the conventional apparatus can improve the in-plane uniformity of processing by using the liquid flow dispersion member, recently, the difference in the flow of processing liquid near the substrate surface has been further reduced with the aim of further improving the in-plane uniformity. It is hoped to do. That is, a technique for forming rectification with a small speed difference in the substrate plane is desired.
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of forming rectification with a small speed difference in the substrate plane.
  • the present invention has the following configuration. That is, the invention described in claim 1 is a substrate processing apparatus for processing a plurality of substrates by immersing them in a processing solution stored in a processing tank, wherein the plurality of substrates are arranged in a predetermined arrangement direction in the processing tank.
  • a plurality of slits disposed between a pair of ejection pipes, a lower portion of the substrate supported by the lifter, and a bottom surface of the processing tank, and having a long axis directed in an arrangement direction of the plurality of substrates.
  • the plurality of slits in the two regions of the outer area corresponding to the tube side is characterized in that the direction of the width of the slits in the outer region than the width of the slit in the central region is large.
  • the slit plate is provided between the bottom of the substrate supported by the lifter and the bottom surface of the processing tank.
  • the plurality of slits formed in the slit plate have a larger width in the outer region than in the central region viewed from the substrate arrangement direction. Therefore, the strong liquid flow of the processing liquid that is supplied from the pair of ejection pipes and rises along the substrate surface in the central region is weakened when it rises to the substrate side through the slit plate. Further, since the width of the slit is increased in the outer region where the liquid flow of the processing liquid is weaker than the central region where the strong liquid flow rises, the momentum of the liquid flow of the processing liquid is not weakened so much. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • the outer region when the slit plate is viewed from the arrangement direction of the substrates, the outer region includes a first outer region that is closer to the pair of ejection pipes than the central region, the central region, and the first region.
  • the plurality of slits are increased in width in the order of the central region, the second outer region, and the first outer region. (Claim 2).
  • the width of the slit increases in order from the central region to the second outer region and the first outer region, the difference can be finely reduced according to the momentum of the liquid flow of the processing liquid. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be further reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • the plurality of substrates are arranged in a predetermined arrangement direction in the processing tank.
  • a lifter to be supported, and a lower part of the processing tank, disposed on both sides when viewed from the arrangement direction of the substrate, in a direction along the bottom surface of the processing tank and in a direction toward the center of the processing tank A plurality of slits disposed between a pair of ejection pipes, a lower portion of the substrate supported by the lifter, and a bottom surface of the processing tank, and having a long axis directed in an arrangement direction of the plurality of substrates.
  • a plurality of slit plates each having a plurality of slits formed in a parallel positional relationship with each other, and a plurality of plate-like members provided on the slit plates and having long sides arranged along the long axis of the slits.
  • the plurality of plate-like members A louver erected toward the bottom surface of the processing bath in a parallel positional relationship to have, and is characterized in that it comprises a.
  • the slit plate is provided between the lower part of the substrate supported by the lifter and the bottom surface of the treatment tank. Further, the slit plate is provided with a louver standing up toward the bottom surface.
  • the processing liquid supplied from the pair of ejection pipes is weakened by the louver, and the strong liquid flow of the processing liquid rising along the substrate surface in the central region passes through the slit plate and rises to the substrate side.
  • the momentum is further weakened. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • the plurality of plate-like members have a distance between a lower end surface thereof and a bottom surface of the treatment tank when the louver is viewed from the arrangement direction of the substrates, from the pair of ejection tube sides. It is preferable that the length becomes shorter toward the center of the treatment tank.
  • the difference can be finely reduced according to the momentum of the liquid flow of the treatment liquid. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be further reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • the plurality of substrates are arranged in a predetermined arrangement direction in the processing tank.
  • a lifter to be supported, and a lower part of the processing tank, disposed on both sides when viewed from the arrangement direction of the substrate, in a direction along the bottom surface of the processing tank and in a direction toward the center of the processing tank A plate-like member disposed between a pair of ejection pipes, a lower portion of a substrate supported by the lifter, and a bottom surface of the processing tank, and having long sides disposed in an arrangement direction of the plurality of substrates.
  • the louver is provided between the lower side of the substrate supported by the lifter and the bottom surface of the processing tank.
  • the plurality of plate-like members provided in the louver are such that the distance between the lower end surface and the bottom surface of the processing tank is shorter in order from the pair of ejection pipes toward the center of the processing tank when viewed from the substrate arrangement direction. It has become. Therefore, since the momentum of the processing liquid supplied from the pair of ejection pipes is weakened by the louvers, the momentum of the liquid flow rising along the substrate surface in the central region is weakened. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • the lifter includes a central portion holding portion that holds the lower edge central portion of the substrate, and a pair of side portion holding portions that hold the lower edges on both sides when viewed from the arrangement direction of the substrate,
  • the plurality of plate-like members are disposed between the central portion holding portion and the side portion holding portion when viewed from the arrangement direction of the substrates.
  • the pair of ejection pipes supply the processing liquid to a supply position in front of the center of the bottom surface of the processing tank (Claim 7).
  • the liquid flow of the treatment liquid is reflected and dispersed on the bottom surface of the treatment tank, the liquid flow of the treatment liquid can be suppressed from being concentrated near the center. Therefore, the strong liquid flow of the processing liquid rising along the substrate surface in the vicinity of the center can be weakened.
  • the slit plate is provided between the lower portion of the substrate supported by the lifter and the bottom surface of the processing tank.
  • the plurality of slits formed in the slit plate have a larger width in the outer region than in the central region viewed from the substrate arrangement direction. Therefore, the strong liquid flow of the processing liquid that is supplied from the pair of ejection pipes and rises along the substrate surface in the central region is weakened when it rises to the substrate side through the slit plate. Further, since the width of the slit is increased in the outer region where the liquid flow of the processing liquid is weaker than the central region where the strong liquid flow rises, the momentum of the liquid flow of the processing liquid is not weakened so much. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
  • FIG. 1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a first embodiment. It is a perspective view which shows a lifter and a slit board. It is a longitudinal cross-sectional view of a slit board. It is a longitudinal cross-sectional view of the slit board and louver of the substrate processing apparatus which concerns on Example 2. FIG. It is a longitudinal cross-sectional view of the louver of the substrate processing apparatus which concerns on Example 3.
  • FIG. 6 is a simulation result showing a flow of a treatment liquid in Example 1. It is the simulation result which showed the flow of the process liquid in Example 2. FIG. It is the simulation result which showed the flow of the process liquid in Example 3. FIG. It is the simulation result which showed the flow of the process liquid in a prior art example.
  • FIG. 1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a first embodiment
  • FIG. 2 is a perspective view illustrating a lifter and a slit plate
  • FIG. 3 is a longitudinal sectional view of the slit plate.
  • the substrate processing apparatus is a batch type apparatus capable of processing a plurality of substrates W at once with a processing liquid.
  • the substrate processing apparatus includes a processing tank 1, an overflow tank 3, and a lifter 5.
  • the processing tank 1 stores a processing liquid, accommodates a plurality of substrates W in a parallel state, and arranges them in a predetermined arrangement direction, and simultaneously processes the plurality of substrates W.
  • the bottom of the processing tank 1 has a shape in which the center of the bottom is a low valley when viewed from the arrangement direction of the substrates W.
  • the pair of jet pipes 7 for supplying the processing liquid is disposed on the bottom side corresponding to the lower part of the processing tank 1 and on both sides (left and right direction in FIG. 1) when viewed from the arrangement direction of the substrates W.
  • the pair of ejection pipes 7 supply the processing liquid in a direction along the bottom surface of the processing tank 1 and toward the center of the processing tank 1.
  • the pair of ejection pipes 7 respectively supply the processing liquid toward the supply position SP in front of the center of the bottom surface of the processing tank 1.
  • the overflow tank 3 is disposed around the upper edge of the processing tank 1.
  • the overflow tank 3 collects the processing liquid overflowing beyond the upper edge of the processing tank 1.
  • the overflow tank 3 is connected in communication by a pair of ejection pipes 7 and a circulation pipe 9 of the processing tank 1.
  • the circulation pipe 9 includes a pump 11, an in-line heater 13, and a filter 15 from the overflow tank 3 side toward the processing tank 1 side.
  • the pump 11 sucks the processing liquid stored in the overflow tank 3 into the circulation pipe 9 and pumps the processing liquid toward the pair of ejection pipes 7.
  • the in-line heater 13 adjusts the temperature of the processing liquid flowing through the circulation pipe 9 to the processing temperature.
  • the processing temperature is 160 ° C., for example.
  • the filter 15 filters and removes particles contained in the processing liquid flowing through the circulation pipe 9.
  • the supply pipe 17 extends along the inner wall of the processing tank 1 and is arranged with an opening on one end side directed toward the bottom surface of the processing tank 1.
  • the other end of the supply pipe 17 is connected to the processing liquid supply source 19.
  • An opening / closing valve 21 is provided in the supply pipe 17.
  • the on-off valve 21 controls the flow of the processing liquid from the processing liquid supply source 19 to the supply pipe 17.
  • the processing liquid supply source 19 stores the processing liquid, and supplies the normal temperature processing liquid to the supply pipe 17 by opening the on-off valve 21.
  • the lifter 5 corresponds to the inside of the processing tank 1, and corresponds to the “processing position” shown in FIG. 1 and the upper part of the processing tank 1, and moves up and down over the “standby position” not shown in FIG.
  • the lifter 5 includes a back plate 23, a center part holding part 25, and a pair of side part holding parts 27.
  • the back plate 23 is a plate-like member along the inner wall of the processing tank 1.
  • the central part holding part 25 and the pair of side part holding parts 27 are provided so as to extend from the lower part of the back plate 23 in the front side of the drawing in FIG. These are held in a predetermined arrangement direction which is the front side of the paper in FIG. 1 with a plurality of substrates W arranged in parallel.
  • the pair of side part holding parts 27 are arranged with the central part holding part 25 interposed therebetween, and support the lower edges of the left and right sides of the substrate W in an upright position by contacting them.
  • a slit plate 31 is disposed between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1.
  • the slit plate 31 has a thin plate-like appearance, and is formed with an elongated opening penetrating vertically, that is, a plurality of slits 33.
  • the slit plate 21 is attached to the inner walls before and after the treatment tank 1.
  • the slit plate 31 is disposed such that its upper surface is located below the lower end surface of the central holding portion 25 of the lifter 5 at the processing position. As a result, the processing liquid that has passed through the slit plate 31 is not hindered by the central holding portion 25.
  • 21 slits 33 are formed in the slit plate 31.
  • a plurality of slits 33 are formed with their long axes directed in the arrangement direction of the substrates W, and are formed in a positional relationship parallel to each other.
  • the slit plate 31 is divided into three regions when viewed from the arrangement direction of the substrates W (the frontward direction in FIG. 1 and FIG. 3).
  • the area is divided into a central area ARC, a first outer area AR1, and a second outer area AR2.
  • the central area ARC is an area having an outward spread including the center.
  • the first outer area AR1 is an outer area corresponding to the pair of ejection pipes 78.
  • the second outer area AR2 is an area between the central area ARC and the first outer area AR1.
  • the seven slits 33 located in the central area ARC are formed to have the width WD1.
  • the four slits 33 located in the first outer region AR1 are formed with a width WD2.
  • the two slits 33 located in the second outer region AR2 are formed with a width WD3.
  • the size relationship between these widths WD1 to WD3 is WD1 ⁇ WD3 ⁇ WD2. That is, each slit 33 is set so that the width of WD1 is the narrowest and becomes larger in the order of WD3 and WD2.
  • the slit plate 31 described above has an advantage that it is easy to process, unlike a punching board in which a plurality of small holes are provided in a plate-like member.
  • control unit 61 incorporates a CPU and a memory (not shown).
  • the controller 61 controls the lifter 5 ascending / descending operation, the pump 11 on / off operation, the in-line heater 13 temperature control operation, the opening / closing valve 21 opening / closing operation, and the like.
  • the substrate processing apparatus includes the slit plate 31 between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1.
  • the 21 slits 33 formed in the slit plate 31 have widths WD2 and WD3 in the first outer area AR1 and the second outer area AR2 larger than the width WD1 in the central area ARC viewed from the arrangement direction of the substrates W. Has been. Therefore, the strong liquid flow of the processing liquid supplied from the pair of ejection pipes 7 and rising along the substrate W surface in the central region ARC has its momentum when passing through the slit plate 31 and rising toward the substrate W side. Weakened.
  • the widths WD2 and WD3 of the slit 33 are made larger than the width WD1. , The momentum of the liquid flow of the processing liquid is not weakened so much. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate W surface can be reduced, and rectification with a small speed difference can be formed in the substrate W surface.
  • the width of the slit is increased in the order from the central area ARC to the second outer area AR2 and the first outer area AR1, the difference can be finely reduced according to the momentum of the liquid flow of the processing liquid. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate W surface can be further reduced, and rectification with a small speed difference can be formed in the substrate W surface.
  • FIG. 4 is a longitudinal sectional view of the slit plate and louver of the substrate processing apparatus according to the second embodiment.
  • the slit plate 71 and the louver 73 are disposed between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. Similar to the first embodiment, the slit plate 71 has a thin plate appearance and is formed with a plurality of slits 75 penetrating vertically. In the present embodiment, as an example, 21 slits 75 are formed in the slit plate 71. However, the slits 75 in this embodiment all have the same width in any region as viewed from the arrangement direction of the substrates W.
  • the louver 73 is provided on the slit plate 71.
  • the louver 73 is composed of a plurality of plate-like members 77.
  • it is composed of six plate-like members 77.
  • the six plate-like members 77 are arranged with long sides along the long axis of the slit 75, and the six plate-like members 77 are erected toward the bottom surface side of the processing tank 1 in a positional relationship parallel to each other.
  • Each plate-like member 77 is provided with three slits 75 between each other.
  • the six plate-like members 77 are arranged such that the distance between each lower end surface and the bottom surface of the processing tank 1 is such that when the louver 73 is viewed from the arrangement direction of the substrates W, the processing tank 1 from the pair of ejection pipes 7 side. It becomes shorter toward the center. In other words, the length of the six plate-like members 77 constituting the louver 73 from the slit plate 71 is increased from the outside toward the center.
  • the slit plate 71 is provided between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. Further, the slit plate 71 is provided with a louver 73 erected toward the bottom surface.
  • the processing liquid supplied from the pair of ejection pipes 7 is weakened by the louver 73, and the strong liquid flow of the processing liquid rising along the surface of the substrate 3 in the central region passes through the slit plate 71 and passes through the substrate W.
  • the momentum is further weakened when ascending to the side. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate W surface can be reduced, and rectification with a small speed difference can be formed in the substrate W surface.
  • the difference can be finely reduced according to the momentum of the liquid flow of the processing liquid. . Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate W surface can be further reduced, and rectification with a small speed difference can be formed in the substrate W surface.
  • FIG. 5 is a longitudinal sectional view of the louver of the substrate processing apparatus according to the third embodiment.
  • the substrate processing apparatus includes a louver 81 between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1.
  • the louver 81 is composed of a plurality of plate-like members 83 and is fixed to the front and back inner surfaces of the processing tank 1.
  • Each louver 81 is erected toward the bottom surface of the processing tank 1 in a positional relationship parallel to each other.
  • the louver 81 is constituted by four plate-like members 83.
  • Each plate-like member 83 has a distance between its lower end surface and the bottom surface of the processing tank 1 from the pair of ejection pipes 7 to the center of the processing tank 1 when the louver 81 is viewed from the arrangement direction of the substrates W. It becomes shorter in order.
  • the four plate-like members 83 constituting the louver 81 are arranged such that the lower end surface approaches the bottom surface of the processing tank 1 as it goes from the outside toward the center.
  • each plate-like member 83 is arranged between the central portion holding portion 25 and the side portion holding portion 27 as seen in a plan view and the arrangement direction of the base W. If any one of the four plate-like members of the louver 73 is disposed at the position of the central holding portion 25, the processing liquid is already dispersed to some extent, so that the effect of weakening the flow of the processing liquid is reduced. On the other hand, when any one of the four plate-like members 77 of the louver 73 is disposed at a position closer to the pair of ejection pipes 7 than the side holding portion 27, the processing liquid is blocked by the plate-like member 77 and the side portion holding portion 27. As a result, the flow of the treatment liquid becomes extremely poor. Therefore, by disposing two each of the four plate-like members 77 between the central part holding part 25 and the side part holding part 27, it is possible to suitably weaken the liquid flow of the processing liquid.
  • the substrate processing apparatus includes the louver 81 between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1.
  • the four plate-like members 83 included in the louver 81 have a distance between the lower end surface and the bottom surface of the processing tank 1 when viewed from the arrangement direction of the substrates W and the processing tank 1 from the pair of ejection pipes 7 side. It becomes shorter in order toward the center. Therefore, the processing liquid supplied from the pair of ejection pipes 7 is weakened by the louver 81 without reducing the flow rate of the processing liquid from the pair of ejection pipes 7, and therefore, along the substrate W surface in the central region. The rising liquid flow will weaken the momentum. Therefore, the difference in the flow of the processing liquid in the vicinity of the substrate W surface can be reduced, and rectification with a small speed difference can be formed in the substrate W surface.
  • FIG. 6 is a simulation result showing the flow of the processing liquid in Example 1
  • FIG. 7 is a simulation result showing the flow of the processing liquid in Example 2
  • FIG. It is the simulation result which showed the flow of the process liquid.
  • FIG. 9 is a simulation result showing the flow of the processing liquid in the conventional example.
  • the conventional example here does not include the liquid flow dispersion member on the bottom surface.
  • each of Examples 1 to 3 achieves rectification with a smaller speed difference in the substrate W plane than the conventional example.
  • the conventional example large vortices are generated at the left and right lower portions of the substrate W to cause a speed difference.
  • the flow velocity is faster than that in Example 1 at the left and right peripheral portions of the substrate W, which is inferior to Example 1.
  • Example 3 the flow velocity is higher than that in Examples 1 and 2 at the lower center of the substrate W, and is inferior to Examples 1 and 2.
  • the present invention is not limited to the above embodiment, and can be modified as follows.
  • the overflow tank 3 is provided around the processing tank 1, but the present invention is not limited to such a form.
  • a configuration may be employed in which a chamber surrounding the processing tank 1 is provided and the processing liquid overflowing from the processing tank 1 is recovered at the bottom of the chamber.
  • the circulation pipe 9 is provided and the treatment liquid is circulated between the treatment tank 1 and the overflow tank 3, but the present invention is not limited to such a structure.
  • a method of discharging the processing liquid overflowing from the processing tank 1 as it is may be used.
  • 21 slits 33 are formed, but the present invention is not limited to this number.
  • the number of slits 33 may be 20 or less or 22 or more.
  • the width of the slit 33 is divided into three regions on one side of the processing tank 1, and the slits 33 have different widths.
  • the present invention is not limited to this form. That is, it may be divided into four or more, and may be formed so that the width decreases from the pair of ejection pipes 7 toward the center for each divided area. Moreover, you may comprise so that all the slits 33 currently formed toward the center from a pair of jet pipe 7 may differ, ie, the width
  • the louver 73 is configured by the six plate-shaped members 77, but the louver 77 may be configured by two or more plate-shaped members 77.
  • the louver 81 is constituted by the four plate-like members 83, but the louver 81 may be constituted by six or more plate-like members 83 in the present invention.
  • the present invention is suitable for a substrate processing apparatus for processing various substrates with a processing liquid.
PCT/JP2018/043203 2018-03-19 2018-11-22 基板処理装置 WO2019181067A1 (ja)

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CN111886675A (zh) 2020-11-03
CN111886675B (zh) 2024-03-26
TW201939647A (zh) 2019-10-01
KR20220047406A (ko) 2022-04-15
JP7002969B2 (ja) 2022-01-20
TWI710048B (zh) 2020-11-11
KR20200099610A (ko) 2020-08-24
JP2019165067A (ja) 2019-09-26
KR102388646B1 (ko) 2022-04-19

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