WO2018168493A1 - 蓄電デバイス - Google Patents
蓄電デバイス Download PDFInfo
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- WO2018168493A1 WO2018168493A1 PCT/JP2018/007770 JP2018007770W WO2018168493A1 WO 2018168493 A1 WO2018168493 A1 WO 2018168493A1 JP 2018007770 W JP2018007770 W JP 2018007770W WO 2018168493 A1 WO2018168493 A1 WO 2018168493A1
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- oxide semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
- H01M10/38—Construction or manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/62—Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- This embodiment relates to a power storage device.
- the first electrode / insulator / n-type oxide semiconductor layer / p-type oxide semiconductor layer / second electrode are laminated because no electrolyte solution / rare element is used and the thickness can be reduced. Secondary batteries have been proposed.
- a positive electrode including a positive electrode active material film containing nickel oxide or the like as a positive electrode active material, a solid electrolyte having a water-containing porous structure, and a negative electrode including titanium oxide or the like as a negative electrode active material A secondary battery including a negative electrode including an active material film has been proposed.
- An electric storage device having a structure in which an n-type semiconductor layer, a charging layer, an insulating layer, and a p-type semiconductor layer are stacked and electrodes are formed on the upper and lower sides has been proposed.
- Japanese Patent No. 5508542 Japanese Patent No. 5297809 JP 2015-82445 A JP 2016-82125 A
- This embodiment provides an electricity storage device capable of increasing the electricity storage capacity per unit volume (weight).
- the first oxide semiconductor layer having the first oxide semiconductor of the first conductivity type, the first oxide semiconductor layer disposed on the first oxide semiconductor layer, and the first oxide A first charge layer made of a conductive second oxide semiconductor; and a third oxide semiconductor layer disposed on the first charge layer, wherein the third oxide semiconductor layer includes hydrogen,
- an electricity storage device that includes a second-conductivity-type third oxide semiconductor, and the ratio of the hydrogen to the metal constituting the third oxide semiconductor is 40% or more.
- the typical cross-section figure of the electrical storage device which concerns on embodiment.
- (b) another schematic configuration diagram of a third oxide semiconductor layer containing hydrogen Relationship in the energy storage device according to the embodiment, the discharge charge quantity Q D and p-type hydrogen content C H in the oxide semiconductor layer.
- the relationship between the discharge charge amount Q D and the thickness t p of the p-type oxide semiconductor layer In the electricity storage device according to the embodiment, the X-ray scattering (XRD) measurement result of the p-type oxide semiconductor layer.
- XRD X-ray scattering
- schematic diagram illustrating the relationship between the hydrogen content C H and the pressure ⁇ P of the p-type oxide semiconductor layer in a sputter deposition In the electric storage device according to the embodiment, schematic diagram illustrating the relationship between the thickness t p of the discharge time T D and the p-type oxide semiconductor layer. In the electric storage device according to the embodiment, schematic views illustrating discharge time T D and the relationship between the thickness t ch of the first charging layer. In the electrical storage device which concerns on embodiment, the schematic block diagram of a sputter deposition apparatus.
- the first conductivity type indicates, for example, n-type
- the second conductivity type indicates p-type opposite to the first conductivity type.
- the first conductivity type first oxide semiconductor layer 14 represents an oxide semiconductor layer having a first conductivity type first oxide semiconductor layer.
- the second conductivity type third oxide semiconductor layer 24 represents an oxide semiconductor layer having a second conductivity type third oxide semiconductor layer. The same applies hereinafter.
- the electricity storage device 30 is disposed on the first oxide semiconductor layer 14 having the first conductivity type first oxide semiconductor, the first oxide semiconductor layer, A first charging layer 16 made of one insulator and a first conductivity type second oxide semiconductor, and a third oxide semiconductor layer 24 disposed on the first charging layer 16 are provided.
- the third oxide semiconductor layer 24 includes hydrogen and a third oxide semiconductor of the second conductivity type, and even if the ratio of hydrogen to the metal included in the third oxide semiconductor is 40% or more. good.
- the third oxide semiconductor layer 24 includes nickel oxide (NiO y H x ) containing hydrogen, the value of the hydrogen composition ratio x is 0.35 or more, and the oxygen composition
- NiO y H x nickel oxide
- the value of the hydrogen composition ratio x is 0.35 or more
- the oxygen composition The value of the ratio y may be arbitrary.
- the second charging layer 18 disposed between the first charging layer 16 and the third oxide semiconductor layer 24 may be provided.
- the second charging layer 18 may include a second insulator.
- the third oxide semiconductor may include NiO.
- the second charge layer 18 may include a second insulator and a conductivity adjusting material.
- the second oxide semiconductor may include at least one oxide selected from the group consisting of oxides of Ti, Sn, Zn, or Mg.
- the conductivity adjusting material may include a first conductivity type semiconductor or a metal oxide.
- the conductivity adjusting material may include at least one oxide selected from the group consisting of Sn, Zn, Ti, or Nb oxides.
- the second insulator may include SiO x
- the conductivity adjusting material may include SnO x .
- the second insulator may include SiO x formed from silicone oil.
- the first insulator may include SiO x
- the second oxide semiconductor may include TiO x .
- the third oxide semiconductor layer may include a metal different from that of the third oxide semiconductor.
- the metal may include lithium or cobalt.
- the thickness of the third oxide semiconductor layer 24 may be increased.
- the hydrogen accumulation amount of the third oxide semiconductor layer 24 can be increased, and the hydrogen accumulation amount in the first charge layer 16 can be increased.
- the thickness of the first charging layer 16 may be increased. By increasing the thickness of the first charge layer 16, the amount of hydrogen stored in the first charge layer 16 can be increased.
- the hydrogen concentration of the third oxide semiconductor layer 24 may be increased and the first charging layer 16 may be formed thicker in order to obtain a sufficient electricity storage capacity.
- the first charge layer 16 may have a composition different from each other and have at least a two-layer structure.
- the first charge layer 16 may be formed of, for example, silicon oxide (SiO x ) / titanium oxide (TiO x ). Specifically, it may be formed by a layer structure of SiO x / TiO x, or may be formed by particles bonded structure coated with SiO x around the TiO x particle shape.
- TiO x may have a structure in which mixed or TiO x and SiO x is wrapped in silicon oxide.
- the composition of titanium oxide and silicon oxide is not limited to TiO x and SiO x, may include a structure in which the composition ratio x of such TiO x or SiO x is changed.
- the n-type oxide semiconductor may be an oxide of titanium (Ti), tin (Sn), zinc (Zn), or magnesium (Mg), SiO x and Ti, Sn, Zn, Mg It may be an oxide layer structure, or may be formed by a particle bonding structure in which the periphery of a particle-shaped oxide of Ti, Sn, Zn, and Mg is covered with SiO x . Further, a structure in which SiO x and molecules or molecular groups of Ti, Sn, Zn, and Mg oxides are surrounded by SiO x (amorphous) may be provided.
- the first charging layer 16 may have a porous structure.
- the first charging layer 16 is a layer that accumulates hydrogen generated during charging.
- a reaction of M + H 2 O + e ⁇ ⁇ MH + OH ⁇ proceeds during charging, and a reaction of MH + OH ⁇ ⁇ M + H 2 O + e ⁇ proceeds during discharging.
- the efficiency of hydrogen accumulation can be increased.
- hydrogen accumulation and conductivity can be optimized by using a plurality of layers.
- the second oxide semiconductor can be optimized by using an oxide of Ti, Sn, Zn, or Mg.
- the second charge layer 18 is a buffer layer for adjusting the movement of H + and electrons (e ⁇ ).
- the oxide semiconductor layer 24 forms a pn junction with the n-type semiconductor (second oxide semiconductor) of the first charging layer 16 and can suppress charge leakage during charging.
- the p-type oxide semiconductor layer 24 is made of nickel oxide (NiO y H x ) containing hydrogen, the amount of hydrogen supplied to the first charge layer 16 can be increased.
- the electricity storage device 30 includes a first electrode 12 and a second electrode 26, the first oxide semiconductor layer 14 includes an n-type oxide semiconductor layer, and a first electrode
- the second oxide semiconductor includes an n-type second oxide semiconductor
- the third oxide semiconductor layer 24 includes a p-type third oxide semiconductor layer, and is connected to the second electrode 26. May be.
- the method of manufacturing the electricity storage device 30 includes the step of forming the first conductivity type first oxide semiconductor layer 14 and the first insulator and the first conductivity type on the first oxide semiconductor layer 14.
- the step of forming the third oxide semiconductor layer 24 may use metallic nickel Ni as a target material at the time of sputtering, supply water vapor or water into the chamber, and increase the sputtering flow rate.
- Ni atoms are excited from the target by ion bombardment with argon ions Ar + , and the excited Ni atoms react with hydrogen and oxygen in the chamber.
- the third oxide semiconductor layer 24 containing hydrogen may be deposited by a sputtering deposition reaction.
- -N-type oxide semiconductor layer 14- A TiO x film is formed on the first electrode 12 constituting the lower electrode by, for example, forming a film by a sputtering deposition method.
- Ti or TiO x can be used as a target.
- the film thickness of the n-type oxide semiconductor layer 14 is, for example, about 50 nm to 200 nm.
- a tungsten (W) electrode can be used as the first electrode 12.
- the chemical solution is formed by stirring fatty acid titanium and silicone oil together with a solvent. This chemical solution is applied onto the n-type oxide semiconductor layer 14 using a spin coater. The rotational speed is, for example, about 500 to 3000 rpm. After application, it is dried on a hot plate. The drying temperature on the hot plate is, for example, about 30 ° C.-200 ° C., and the drying time is, for example, about 5-30 minutes. Baking after drying. For the post-drying firing, firing is performed in the air using a firing furnace. The firing temperature is, for example, about 300 ° C. to 600 ° C., and the firing time is, for example, about 10 minutes to 60 minutes.
- the aliphatic acid salt is decomposed to form a fine particle layer of titanium dioxide covered with a silicone insulating film.
- the above manufacturing (manufacturing) method in which titanium dioxide covered with a silicone insulating film is formed is a coating pyrolysis method. Specifically, this layer has a structure in which a metal layer of titanium dioxide coated with silicone is embedded in the silicone layer.
- UV irradiation with a low-pressure mercury lamp is performed.
- the UV irradiation time is, for example, about 10 to 100 minutes.
- the film thickness of the first charging layer 16 is, for example, about 200 nm to 2000 nm.
- -Second charge layer (buffer layer) 18- The chemical solution is formed by stirring silicone oil with a solvent. This chemical solution is applied onto the first charging layer 16 using a spin coating device. The rotational speed is, for example, about 500 to 3000 rpm. After application, it is dried on a hot plate. The drying temperature on the hot plate is, for example, about 50 ° C.-200 ° C., and the drying time is, for example, about 5-30 minutes. Furthermore, it is fired after drying. For the post-drying firing, firing is performed in the air using a firing furnace. The firing temperature is, for example, about 300 ° C. to 600 ° C., and the firing time is, for example, about 10 minutes to 60 minutes.
- UV irradiation with a low-pressure mercury lamp is performed.
- the UV irradiation time is, for example, about 10-60 minutes.
- the film thickness of the second charging layer (buffer layer) 18 after UV irradiation is, for example, about 10 nm-100 nm.
- NiO y H x nickel oxide (NiO y H x ) film containing hydrogen is formed on the second charge layer 18 by, for example, sputtering deposition.
- Ni or NiO can be used as a target.
- Water is taken in from water vapor or moisture in the chamber of the sputtering deposition apparatus.
- the film thickness of the p-type oxide semiconductor layer (nickel oxide containing hydrogen (NiO y H x )) 24 is, for example, about 200 nm to 1000 nm.
- the second electrode 26 as the upper electrode is formed, for example, by depositing Al by sputtering deposition or vacuum deposition.
- a film can be formed on the p-type oxide semiconductor layer (nickel oxide containing hydrogen (NiO y H x )) 24 using an Al target.
- a stainless mask may be used, and only the designated region may be formed.
- the p-type oxide semiconductor layer 24 is expressed as a mixed layer of nickel oxide NiO and nickel hydroxide Ni (OH) 2 , for example, as shown in FIG. .
- the p-type oxide semiconductor layer 24 is expressed as nickel oxide (NiO y H x ) containing hydrogen.
- the p-type oxide semiconductor layer 24 includes, for example, nickel oxide NiO, nickel hydroxide Ni (OH) 2, and nickel oxyhydroxide as illustrated in FIG. It is expressed as a mixed layer of NiOOH. As a result, the p-type oxide semiconductor layer 24 is expressed as nickel oxide (NiO y H x ) containing hydrogen.
- a predetermined time by applying a charging voltage, then between the first electrode E1 ⁇ second electrode E2 open, to measure the discharge time T D.
- the discharge time T D of the electric storage device 30 is changed. Sputtering flow conditions, by changing the film thickness, the discharge time T D is found to be possible increased.
- discharge time T D can be increased.
- the flow rate of Ar / O 2 in the chamber in the sputtering by increasing respectively, discharge time T D is also found to be possible increased.
- the discharge time T D is also found to be possible increased.
- the relationship between discharge charge quantity Q D and p-type oxide hydrogen content C H of the semiconductor layer 24 is expressed as shown in FIG.
- the relationship between the discharge charge amount Q D and the hydrogen amount C H in the nickel oxide (NiO y H x ) 24 containing hydrogen is proportional, and increases the hydrogen amount C H.
- the discharge charge amount Q D is increased and the power storage performance is improved.
- the relationship between the discharge charge amount Q D and the thickness t p of the p-type oxide semiconductor layer 24 is expressed as shown in FIG.
- metallic nickel Ni As the target material at the time of sputtering, metallic nickel Ni was used.
- NiO refers to the case where nickel oxide is used as a target material during sputtering (reference example).
- the relationship between the discharge charge amount Q D and the thickness t p of the p-type oxide semiconductor layer 24 is a proportional relationship. As the thickness t p is increased, the discharge charge amount Q D is The power storage performance is improved.
- the relationship between the thickness t p of the discharge time T D and the p-type oxide semiconductor layer 24 is schematically expressed as shown in FIG.
- the thickness t p of the p-type oxide semiconductor layer 24 is proportional to the hydrogen addition amount from the SIMS analysis result, the hydrogen addition amount in the p-type oxide semiconductor layer 24 is increased by increasing the thickness t p. Can be increased.
- the relationship between the thickness t p of the discharge time T D and the p-type oxide semiconductor layer 24, as shown in FIG. 7, is proportional to the thickness t p by, it is possible to increase the hydrogen content C H, as a result the discharge time T D can be increased.
- the relationship between the thickness t ch discharge time T D and the first charging layer 16 is schematically expressed as shown in FIG.
- the relationship between the thickness t ch discharge time T D and the first charging layer 16, as shown in FIG. 8, is proportional to, increasing the thickness t ch in, it is possible to increase the hydrogen storage amount of the first charging layer 16, resulting in the discharge time T D can be increased.
- FIG. 600 A schematic configuration of a sputtering deposition apparatus 600 applied in the method for manufacturing the electricity storage device 30 according to the embodiment is expressed as shown in FIG. Note that a batch type apparatus capable of processing a plurality of sheets may be used by expanding the apparatus configuration of FIG.
- the sputtering deposition apparatus 600 applied in the method for manufacturing the electricity storage device 30 according to the embodiment includes a gas inlet 100, a gas outlet 200, a cylinder-shaped upper electrode 80, a target And a chamber 500 including 400.
- a heater 60 and a sample substrate 50 that can be heated by the heater 60 are disposed on the upper electrode 80.
- a magnet 90 is connected to the target 400, and a magnetic force line 70 can be generated on the target 400 as shown in FIG.
- Argon (Ar) gas and oxygen (O 2 ) gas can be supplied from the gas inlet 100 into the chamber 500 at a predetermined flow rate.
- the exhaust gas after the sputtering deposition reaction is discharged from the gas discharge port 200.
- the gas discharge port 200 is connected to, for example, a cryopump or a turbo molecular pump disposed outside the chamber 500.
- metal Ni or NiO can be applied as the target 400.
- a substrate sample having a layer structure including the first electrode (E1) and having the first charging layer 16 as an exposed surface is applicable.
- a high-frequency power source 300 that can be excited at a predetermined frequency is connected between the upper electrode 80 electrically connected to the chamber 500 and the target 400 electrically insulated from the chamber 500.
- a predetermined amount of plasma composed of argon ions Ar + and electrons e ⁇ is generated between the upper electrode 80 and the target 400 in the chamber 500, and Ni atoms are excited from the target 400 by ion bombardment with the argon ions Ar +. Is done.
- the excited Ni atoms deposit the p-type oxide semiconductor layer 24 containing hydrogen on the surface of the sample substrate 50 by a sputtering deposition reaction while reacting with hydrogen and oxygen in the chamber.
- the p-type oxide semiconductor layer 24 is expressed as nickel oxide (NiO y H x ) containing hydrogen.
- the discharge time can be increased by increasing the hydrogen (H) concentration. For this reason, for example, water vapor or H 2 O may be supplied into the chamber during sputtering.
- RBS Rutherford Backscattering Spectroscopy
- nickel oxide (NiO y H x ) containing hydrogen (H) of 15% or more in atomic weight ratio is necessary for discharging.
- a power storage device capable of increasing a power storage capacity per unit volume (weight) and a manufacturing method thereof.
- the structure of the electricity storage device 30 according to the embodiment is produced in a sheet shape using a stainless steel foil as a substrate. Then, this sheet
- the second electrode (upper electrode) of two sheets are opposed to each other, an electrode (thin metal foil) is inserted between them, and the two sheets are stacked in multiple layers to produce an electricity storage device having a necessary capacity. May be. Thereafter, it may be sealed with a laminate or the like.
- the present embodiment includes various embodiments that are not described here.
- the power storage device of this embodiment can be used for various consumer devices and industrial devices, and is intended for system applications that can transmit various sensor information with low power consumption, such as power storage devices for communication terminals and wireless sensor networks. It can be applied to a wide range of application fields such as power storage devices.
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Abstract
Description
実施の形態に係る蓄電デバイス30は、図1に示すように、第1導電型の第1酸化物半導体を有する第1酸化物半導体層14と、第1酸化物半導体層上に配置され、第1絶縁物と第1導電型の第2酸化物半導体とからなる第1充電層16と、第1充電層16上に配置された第3酸化物半導体層24とを備える。ここで、第3酸化物半導体層24は、水素、及び第2導電型の第3酸化物半導体を有し、第3酸化物半導体を構成する金属に対する水素の割合が40%以上であっても良い。
第1充電層16は、充電時に発生した水素を蓄積する層である。第1充電層16は、充電時は、M+H2O+e-→MH+OH-の反応が進行し、放電時は、MH+OH-→M+H2O+e-の反応が進行する。多孔質化することで、水素蓄積の効率を増大可能である。また、複数層とすることで、水素蓄積と導電性を最適化できる。第2酸化物半導体を、Ti、Sn、Zn若しくはMgの酸化物とすることで、最適化可能である。
第2充電層18は、H+及び電子(e-)の移動を調整するためのバッファ層である。
酸化物半導体層24は、第1充電層16のn型半導体(第2酸化物半導体)に対してpn接合を構成し、充電時の電荷リークを抑制可能である。p型酸化物半導体層24は、水素を含有する酸化ニッケル(NiOyHx)とすることで、第1充電層16への水素供給量を増大可能になる。
実施の形態に係る蓄電デバイス30は、図1に示すように、第1電極12と、第2電極26とを備え、第1酸化物半導体層14はn型酸化物半導体層を備え、かつ第1電極12に接続され、第2酸化物半導体はn型第2酸化物半導体を備え、第3酸化物半導体層24はp型第3酸化物半導体層を備え、かつ第2電極26に接続されていても良い。
実施の形態に係る蓄電デバイス30の製造方法は、第1導電型の第1酸化物半導体層14を形成する工程と、第1酸化物半導体層14上に、第1絶縁物と第1導電型の第2酸化物半導体とからなる第1充電層16を形成する工程と、第1充電層16上に第2充電層18を形成する工程と、第2充電層18上にスパッタデポジション法により第3酸化物半導体層24を形成する工程とを有する。
下部電極を構成する第1電極12上にTiOx膜を例えば、スパッタデポジション法で成膜することによって形成する。ここで、TiまたはTiOxをターゲットとして使用可能である。n型酸化物半導体層14の膜厚は、例えば、約50nm-200nm程度である。なお、第1電極12は、例えば、タングステン(W)電極などを適用可能である。
薬液は脂肪酸チタンとシリコーンオイルを溶媒と共に攪拌して形成する。この薬液を、スピン塗布装置を用いて、n型酸化物半導体層14上に塗布する。回転数は例えば、約500-3000rpmである。塗布後、ホットプレート上で乾燥させる。ホットプレート上の乾燥温度は、例えば、約30℃-200℃程度、乾燥時間は、例えば約5分-30分程度である。乾燥後焼成する。乾燥後焼成には、焼成炉を用い、大気中で焼成する。焼成温度は例えば、約300℃-600℃程度、焼成時間は例えば、約10分-60分程度である。
薬液はシリコーンオイルを溶媒と共に攪拌して形成する。この薬液を、スピン塗布装置を用いて、第1充電層16上に塗布する。回転数は例えば、約500-3000rpmである。塗布後、ホットプレート上で乾燥させる。ホットプレート上の乾燥温度は例えば、約50℃-200℃程度、乾燥時間は例えば、約5分-30分程度である。さらに、乾燥後焼成する。乾燥後焼成には、焼成炉を用い、大気中で焼成する。焼成温度は例えば、約300℃-600℃程度、焼成時間は例えば、約10分-60分程度である。焼成後、低圧水銀ランプによるUV照射を実施する。UV照射時間は例えば、約10分-60分程度である。UV照射後の第2充電層(バッファ層)18の膜厚は、例えば、約10nm-100nm程度である。
第2充電層18上に水素を含有する酸化ニッケル(NiOyHx)膜を例えば、スパッタデポジション法で成膜することによって形成する。ここで、NiまたはNiOをターゲットとして使用可能である。また、水は、スパッタデポジション装置のチャンバー内の水蒸気若しくは水分から取り込まれる。p型酸化物半導体層(水素を含有する酸化ニッケル(NiOyHx))24の膜厚は、例えば、約200nm-1000nm程度である。
上部電極としての第2電極26は、例えばAlをスパッタデポジション法若しくは真空蒸着法で成膜することによって形成する。p型酸化物半導体層(水素を含有する酸化ニッケル(NiOyHx))24上にAlターゲットを使用して成膜可能である。第2電極26は、例えば、ステンレスマスクを用い、指定領域のみ成膜しても良い。
実施の形態に係る蓄電デバイス30において、p型酸化物半導体層24の模式的構成例は、図2(a)に示すように表される。また、p型酸化物半導体層24の別の模式的構成例は、図2(b)に示すように表される。
二次イオン質量分析法(SIMS:Secondary Ion Mass Spectrometry)の分析結果より、p型酸化物半導体層24中の総水素量CHと蓄電デバイス30の放電時間TDに比例する放電電荷量QDの関係を測定した。
SIMSの分析結果より、p型酸化物半導体層(水素を含有する酸化ニッケル(NiOyHx))24中の水素Hの添加量は膜深さ方向にほぼ一定であった。このため、p型酸化物半導体層24の厚さtpに比例して、p型酸化物半導体層24中の総水素量は、増加している。そこで、同成膜条件でp型酸化物半導体層24の厚さtpを変更したときの、膜厚と放電時間との関係を測定し、放電電荷量QDとp型酸化物半導体層24の厚さtpとの関係を求めた。
実施の形態に係る蓄電デバイスにおいて、p型酸化物半導体層24のX線散乱(XRD:X-ray diffraction)測定結果は、図5に示すように表される。XRDの測定結果、2θ=37度および43度の結果より、NiOの(111)面37度と、(200)面43度が観測されている。
実施の形態に係る蓄電デバイス30において、スパッタデポジションにおけるp型酸化物半導体層24中の水素量CHと圧力ΔPとの関係は、図6に示すように模式的に表される。ここで、圧力ΔP=P1、P2、P3はリニアに増大しており、それぞれに対応する水素量CH=CP1、CP2、CP3もリニアに増大している。圧力ΔPは、スパッタリングにおけるチャンバー内のAr/O2の流量をそれぞれ増加することで、変更可能である。
実施の形態に係る蓄電デバイス30において、放電時間TDとp型酸化物半導体層24の厚さtpとの関係は、図7に示すように模式的に表される。ここで、厚さtp=tp1、tp2、tp3はリニアに増大しており、それぞれに対応する放電時間TD=TP1、TP2、TP3もリニアに増大している。p型酸化物半導体層24の厚さtpは、SIMSの分析結果より、水素添加量に比例するため、厚さtpを増大することで、p型酸化物半導体層24中の水素添加量を増大可能である。
実施の形態に係る蓄電デバイス30において、放電時間TDと第1充電層16の厚さtchとの関係は、図8に示すように模式的に表される。ここで、第1充電層16の厚さtch=tch1、tch2、tch3は増大しており、それぞれに対応する放電時間TD=Tc1、Tc2、Tc3も増大している。
実施の形態に係る蓄電デバイス30の製造方法において適用されるスパッタデポジション装置600の模式的構成は、図9に示すように表される。尚、図9の装置構成を拡張した複数枚処理可能なバッチ式装置を用いても良い。
SIMSでは、相互比較はできるが、絶対量が測定できないため、ラザフォード後方散乱分光法(RBS:Rutherford Backscattering Spectroscopy)での定量化も実施した。RBSにおいては、試料に高速イオン(He+、H+等)を照射すると、入射イオンのうち一部は試料中の原子核により弾性(ラザフォード)散乱を受ける。散乱イオンのエネルギーは、対象原子の質量及び位置(深さ)により異なる。この散乱イオンのエネルギーと収量から、深さ方向の試料の元素組成を得ることができる。この結果、一例として、Ni含有量35.20%、O含有量35.60%、H含有量29.00%の結果が得られ、原子量比で約30%の水素(H)が含まれていることが判明した。
上記のように、実施の形態について記載したが、開示の一部をなす論述及び図面は例示的なものであり、限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
14…第1酸化物半導体層
16…第1充電層
18…第2充電層
24…第3酸化物半導体層
26…第2電極(E2)
30…蓄電デバイス
50…サンプル基板
60…ヒータ
70…磁力線
80…上部電極
90…磁石
100…ガス導入口
200…ガス排出口
300…高周波電源
400…ターゲット
500…チャンバー
600…スパッタデポジション装置
Claims (14)
- 第1導電型の第1酸化物半導体を有する第1酸化物半導体層と、
前記第1酸化物半導体層上に配置され、第1絶縁物と第1導電型の第2酸化物半導体とからなる第1充電層と、
前記第1充電層上に配置された第3酸化物半導体層と
を備え、
前記第3酸化物半導体層は、水素、及び第2導電型の第3酸化物半導体を有し、前記第3酸化物半導体を構成する金属に対する前記水素の割合が40%以上であることを特徴とする蓄電デバイス。 - 前記第1充電層と前記第3酸化物半導体層との間に配置された第2充電層を備えることを特徴とする請求項1に記載の蓄電デバイス。
- 前記第2充電層は、第2絶縁物を備えることを特徴とする請求項2に記載の蓄電デバイス。
- 前記第3酸化物半導体は、NiOを備えることを特徴とする請求項1~3のいずれか1項に記載の蓄電デバイス。
- 前記第2充電層は、第2絶縁物と、導電率調整材とを備えることを特徴とする請求項2に記載の蓄電デバイス。
- 前記第2酸化物半導体は、Ti、Sn、Zn、若しくはMgの酸化物からなる群から選択された少なくとも1つの酸化物を備えることを特徴とする請求項1~5のいずれか1項に記載の蓄電デバイス。
- 前記導電率調整材は、第1導電型の半導体、若しくは金属の酸化物を備えることを特徴とする請求項5に記載の蓄電デバイス。
- 前記導電率調整材は、Sn、Zn、Ti、若しくはNbの酸化物からなる群から選択された少なくとも1つの酸化物を備えることを特徴とする請求項5または7に記載の蓄電デバイス。
- 前記第2絶縁物は、SiOxを備え、前記導電率調整材は、SnOxを備えることを特徴とする請求項5に記載の蓄電デバイス。
- 前記第2絶縁物は、シリコーンオイルから成膜したSiOxを備えることを特徴とする請求項5に記載の蓄電デバイス。
- 前記第1絶縁物はSiOxを備え、前記第2酸化物半導体はTiOxを備えることを特徴とする請求項1~10のいずれか1項に記載の蓄電デバイス。
- 前記第3酸化物半導体層は、前記第3酸化物半導体とは異なる金属を備えることを特徴とする請求項1に記載の蓄電デバイス。
- 前記金属は、リチウム、又はコバルトを備えることを特徴とする請求項12に記載の蓄電デバイス。
- 第1導電型の第1酸化物半導体層と、
前記第1酸化物半導体層上に配置され、第1絶縁物と第1導電型の第2酸化物半導体とからなる第1充電層と、
前記第1充電層上に配置された第2導電型の第3酸化物半導体層と
を備え、
前記第3酸化物半導体層は、水素を含有する酸化ニッケル(NiOyHx)を備え、水素組成比xの値は0.35以上、酸素組成比yの値は任意であることを特徴とする蓄電デバイス。
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