WO2018123179A1 - 固体電解コンデンサの製造方法 - Google Patents
固体電解コンデンサの製造方法 Download PDFInfo
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- WO2018123179A1 WO2018123179A1 PCT/JP2017/035431 JP2017035431W WO2018123179A1 WO 2018123179 A1 WO2018123179 A1 WO 2018123179A1 JP 2017035431 W JP2017035431 W JP 2017035431W WO 2018123179 A1 WO2018123179 A1 WO 2018123179A1
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- compound
- conductive polymer
- electrolytic capacitor
- solid electrolyte
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- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- IZJIQLPALMMUNB-UHFFFAOYSA-N naphtho[2,3-f][2]benzothiole Chemical compound C1=CC=CC2=CC3=CC4=CSC=C4C=C3C=C21 IZJIQLPALMMUNB-UHFFFAOYSA-N 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229940093430 polyethylene glycol 1500 Drugs 0.000 description 1
- 229940068918 polyethylene glycol 400 Drugs 0.000 description 1
- 229940057847 polyethylene glycol 600 Drugs 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- DOYOPBSXEIZLRE-UHFFFAOYSA-N pyrrole-3-carboxylic acid Chemical compound OC(=O)C=1C=CNC=1 DOYOPBSXEIZLRE-UHFFFAOYSA-N 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- MABNMNVCOAICNO-UHFFFAOYSA-N selenophene Chemical compound C=1C=C[se]C=1 MABNMNVCOAICNO-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- TULWUZJYDBGXMY-UHFFFAOYSA-N tellurophene Chemical compound [Te]1C=CC=C1 TULWUZJYDBGXMY-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- DGQOCLATAPFASR-UHFFFAOYSA-N tetrahydroxy-1,4-benzoquinone Chemical compound OC1=C(O)C(=O)C(O)=C(O)C1=O DGQOCLATAPFASR-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- UYGIYVMPGNRKTG-UHFFFAOYSA-N thieno[2,3-c]pyridazine Chemical compound C1=NN=C2SC=CC2=C1 UYGIYVMPGNRKTG-UHFFFAOYSA-N 0.000 description 1
- GDQBPBMIAFIRIU-UHFFFAOYSA-N thieno[2,3-c]pyridine Chemical compound C1=NC=C2SC=CC2=C1 GDQBPBMIAFIRIU-UHFFFAOYSA-N 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3243—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
- C08G2261/344—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/40—Polymerisation processes
- C08G2261/43—Chemical oxidative coupling reactions, e.g. with FeCl3
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/50—Physical properties
- C08G2261/51—Charge transport
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/70—Post-treatment
- C08G2261/79—Post-treatment doping
- C08G2261/792—Post-treatment doping with low-molecular weight dopants
Definitions
- the present invention relates to a method for producing a solid electrolytic capacitor in which a solid electrolyte layer containing a conductive polymer is formed on a valve metal surface having fine holes.
- the solid electrolytic capacitor has a structure in which a dielectric oxide film is formed on the surface of a valve metal (anode body) by anodic oxidation, and an electron conductive solid electrolyte is formed thereon as a cathode material, and equivalent series resistance (ESR) Is excellent in high-frequency characteristics due to its low resistance, and also excellent in stability at high temperatures.
- a valve metal anode body
- ESR equivalent series resistance
- a ⁇ -conjugated polymer represented by polyacetylene, polythiophene, polyaniline, polypyrrole, polyphenylene, poly (p-phenylene-vinylene), etc.
- a ⁇ -conjugated polymer represented by polyacetylene, polythiophene, polyaniline, polypyrrole, polyphenylene, poly (p-phenylene-vinylene), etc.
- polythiophene is useful from the viewpoint of chemical stability.
- a method for forming a solid electrolyte layer of a solid electrolytic capacitor a method in which a conductive polymer monomer solution and an oxidant solution are impregnated in pores and chemical polymerization is performed, or a conductive polymer aqueous dispersion is used.
- a method of forming a solid electrolyte layer by impregnating in the pores There is known a method of forming a solid electrolyte layer by impregnating in the pores.
- Patent Document 1 an anode foil formed with a dielectric oxide film layer and a cathode foil subjected to etching treatment or post-etching chemical conversion treatment are wound through a separator.
- a step of forming a first solid electrolyte layer by impregnating the formed capacitor element with a conductive polymer-dispersed aqueous solution in which fine particles of a conductive polymer are dispersed, and a complex on the surface of the first solid electrolyte layer.
- a manufacturing method is disclosed. By this method, a solid electrolytic capacitor having a low internal resistance (ESR) and a high capacity achievement rate and excellent high frequency characteristics can be obtained.
- ESR internal resistance
- Patent Document 2 JP-A-2005-109252 discloses a chemistry of a polymerizable monomer as a solid electrolyte layer in a capacitor element in which a dielectric oxide film is formed on the surface of a sintered body obtained by sintering valve metal powder. After forming the conductive polymer layer by polymerization, this capacitor element is immersed in the conductive polymer solution, or coated with the conductive polymer solution and dried, so that the conductive polymer layer is formed on the conductive polymer layer by chemical polymerization. Further, a method for forming a thick conductive polymer layer is disclosed. By this method, the conductive polymer layer can be formed thicker on the outer periphery of the capacitor element.
- JP-A-2002-158144 (US 6,614,063; Patent Document 3) describes a performance degradation due to a residue generated when a solid electrolyte layer of a conductive polymer layer is formed by chemical polymerization of a polymerizable monomer (degradation of ESR).
- degradation of ESR a method is disclosed in which the formed polymer film is shower washed and dried to remove the residue.
- the subject of the present invention is a complicated polymerization process in the formation of a solid electrolyte membrane containing a conductive polymer in order to obtain a solid electrolytic capacitor excellent in characteristics such as low ESR, high capacity achievement rate, and low leakage current.
- An object of the present invention is to provide a manufacturing method for forming a solid electrolyte membrane containing a conductive polymer by a simple process without taking a film forming process and a purification process.
- the present inventors have used one or more compounds having a benzo [c] thiophene-1,3-dihydro-2-oxide skeleton, which is an isothianaphthene derivative. And found that a desired conductive polymer (conductive polymer) can be obtained by homopolymerization or copolymerization in the presence of a compound having a sulfo group as a substituent having dopant ability and catalytic ability. Based on the knowledge, the present inventors have completed the method for producing the solid electrolytic capacitor of the present invention.
- the present invention relates to a method for producing a solid electrolytic capacitor as described in [1] to [12] below.
- a method for producing a solid electrolytic capacitor comprising a step of forming a solid electrolyte layer containing a conductive polymer on the dielectric coating by polymerizing a conductive polymer monomer,
- the following general formula (1) [Wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently (1) a hydrogen atom or (2) a linear or branched group having 1 to 20 carbon atoms.
- the hydrocarbon chains in the substituents represented by R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are bonded to each other at an arbitrary position, and at least 1 together with the carbon atom to which the substituent is bonded. At least one divalent chain that forms a cyclic structure of two saturated or unsaturated hydrocarbons of 3 to 7 members may be formed.
- the alkyl group, alkoxy group, alkyl ester group represented by R 1 , R 2 , R 3 , R 4 , R 5 and R 6 , or the cyclic hydrocarbon chain formed by them include carbonyl, ether, ester, amide, It may contain at least one bond selected from sulfide, sulfinyl, sulfonyl and imino.
- M is OH or O
- - Na +, O - Li + and O - alkali metal alkoxide is selected from K +, O - NH 4 + in ammonium alkoxide represented, linear or branched having 1 to 20 carbon atoms
- k represents the number of condensed rings surrounded by a heterocycle and a benzene ring having substituents R 1 to R 4 , and is an integer of 0 to 3.
- a solid electrolyte layer containing the conductive polymer is formed by polymerizing at least one compound (A1) represented by the formula (B) in the presence of a sulfo group-containing compound (B) without using an oxidizing agent.
- a method for producing a solid electrolytic capacitor [2] The method for producing a solid electrolytic capacitor as described in 1 above, wherein the compound (A1) is a compound in which k in the formula (1) is 0. [3] R 1 , R 2 , R 3 , R 4 , R 5 and R 6 in the general formula (1) are each independently (1) a hydrogen atom or (2) a straight chain having 1 to 20 carbon atoms.
- a step of preparing a valve metal having micropores, a step of forming a dielectric film on the surface of the valve metal, a step of attaching a polymerization reaction liquid containing a conductive polymer monomer on the dielectric film, and A method for producing a solid electrolytic capacitor comprising a step of forming a solid electrolyte layer containing a conductive polymer on the dielectric coating by polymerizing a conductive polymer monomer, On the dielectric coating, the following general formula (2) [Wherein R 7 is a sulfo group.
- R 2 , R 3 , R 4 , R 5 , and R 6 are each independently (1) a hydrogen atom, (2) linear or branched alkyl having 1 to 20 carbon atoms, or 1 to 20 carbon atoms. Linear or branched alkoxy, or linear or branched alkyl ester group having 1 to 20 carbon atoms (alkylcarbonyloxy group or alkoxycarbonyl group), (3) SO 2 M, (4) halogen atom , (5) carboxy group, (6) phosphonyl group, (7) nitro group, (8) cyano group, (9) primary, secondary or tertiary amino group, (10) trihalomethyl group, (11) phenyl And (12) a monovalent group selected from the group consisting of an alkyl group, a hydroxy group, an alkoxy group, an alkyl ester group, a carbonyl group, a sulfo group, and a phenyl group substituted with at least one selected from a halogen atom
- the hydrocarbon chains in the substituents represented by R 2 , R 3 , R 4 , R 5 and R 6 are bonded to each other at any position, and together with the carbon atom to which the substituent is bonded, at least one 3 to You may form at least 1 bivalent chain
- the alkyl group, alkoxy group, alkyl ester group represented by R 2 , R 3 , R 4 , R 5 and R 6 , or the cyclic hydrocarbon chain formed by them include carbonyl, ether, ester, amide, sulfide, sulfinyl.
- M is OH or O
- - Na +, O - Li + and O - alkali metal alkoxide is selected from K +, O - NH 4 + in ammonium alkoxide represented, linear or branched having 1 to 20 carbon atoms
- k represents the number of condensed rings surrounded by a heterocycle and a benzene ring having substituents R 2 to R 4 , and is an integer of 0 to 3.
- a method for producing a solid electrolytic capacitor comprising polymerizing at least one of the compounds (A2) represented by formula (1) without using an oxidizing agent to form a solid electrolyte layer containing the conductive polymer.
- the compound (A2) is a compound in which k in the general formula (2) is 0.
- R 2 , R 3 , R 4 , R 5 and R 6 in the general formula (2) are each independently (1) hydrogen atom, (2) carbon number 1 A linear or branched alkyl group having ⁇ 20, a linear or branched alkoxy group having 1 to 20 carbon atoms, or a linear or branched alkyl ester group having 1 to 20 carbon atoms, and (3 6.
- a step of preparing a valve metal having micropores, a step of forming a dielectric film on the surface of the valve metal, a step of attaching a polymerization reaction liquid containing a conductive polymer monomer on the dielectric film, and A method for producing a solid electrolytic capacitor comprising a step of forming a solid electrolyte layer containing a conductive polymer on the dielectric coating by polymerizing a conductive polymer monomer, On the dielectric film, at least one of the compound (A1) represented by the general formula (1) described in the previous item 1 and at least one of the compound (A2) represented by the general formula (2) described in the previous item 4 are provided.
- a method for producing a solid electrolytic capacitor wherein a seed is copolymerized without using an oxidizing agent to form a solid electrolyte layer containing a conductive polymer.
- a solid electrolyte layer containing a conductive polymer is formed by copolymer
- a step of preparing a valve metal having micropores, a step of forming a dielectric film on the surface of the valve metal, a step of attaching a polymerization reaction liquid containing a conductive polymer monomer on the dielectric film, and A method for producing a solid electrolytic capacitor comprising a step of forming a solid electrolyte layer containing a conductive polymer on the dielectric coating by polymerizing a conductive polymer monomer, On the dielectric film, at least one compound (A2) represented by the general formula (2) described in the above item 4 and a compound (D) copolymerizable with the compound (A2) are used using an oxidizing agent.
- a solid electrolytic capacitor manufacturing method comprising forming a solid electrolyte layer containing a conductive polymer by copolymerizing without conducting polymerization.
- a method for producing a solid electrolytic capacitor [11] The method for producing a solid electrolytic capacitor as described in any one of [1] to [10] above, wherein a solid electrolyte layer containing a conductive polymer is formed by polymerization while removing generated water. [12] The method for producing a solid electrolytic capacitor as described in any one of 1 to 10 above, wherein a solvent having a vapor pressure higher than that of water is used in the polymerization of the conductive polymer.
- a solid electrolyte membrane containing a conductive polymer can be formed on a dielectric coating on the surface of a valve metal having micropores by a simple process without taking a complicated polymerization process, film formation process and purification process. it can.
- a solid electrolytic capacitor excellent in characteristics of low ESR, high capacity achievement rate, and low leakage current can be provided.
- the method for producing a solid electrolytic capacitor according to the present invention includes a step of preparing a valve metal having a fine hole as an anode body, a step of forming a dielectric film on the surface of the valve metal having a fine hole, and a high conductivity on the dielectric film.
- a step of attaching a polymerization reaction solution for forming a solid electrolyte layer containing molecules, a step of forming a solid electrolyte layer on a dielectric film by conducting a polymerization reaction of a conductive polymer, and a conductive paste on the solid electrolyte layer A step of forming a conductor layer.
- the valve metal used as the anode body in the method for producing a solid electrolytic capacitor of the present invention includes aluminum (Al), beryllium (Be), bismuth (Bi), magnesium (Mg), germanium (Ge), hafnium (Hf), Niobium (Nb), antimony (Sb), silicon (Si), tin (Sn), tantalum (Ta), titanium (Ti), vanadium (V), tungsten (W) and zirconium (Zr), as well as these metals
- An alloy or compound of at least one and another element can be mentioned.
- the anode body may be in the form of a molded body having fine holes such as an etched rolled foil or a fine powder sintered body.
- a valve metal having fine pores may be referred to as a porous anode body.
- a dielectric film made of an oxide is formed on the outer surface and the metal surface in the micropore.
- the dielectric coating can be formed by anodizing the surface of the porous anode body (including the inner surface of the micropores) as follows.
- the porous anode body can be anodized (chemical conversion treatment) by applying a voltage in a phosphoric acid solution, for example, and a dielectric film can be formed on the surface (including the inner surface of the micropores).
- the magnitude of the formation voltage can be determined by the thickness of the dielectric coating and the withstand voltage of the capacitor.
- a preferable formation voltage is 1 to 800V, more preferably 1 to 300V, and more preferably 1 to 100V.
- the chemical conversion treatment within this range is desirable from the viewpoint of the thickness of the chemical conversion layer and the withstand voltage.
- a solid electrolyte layer further containing a conductive polymer is formed on the dielectric coating formed on the surface of the porous anode body.
- a polymerization reaction solution for forming a solid electrolyte layer (a reaction solution for polymerizing a conductive polymer monomer) is adhered onto the dielectric coating on the surface of the porous anode body.
- Examples of the method for attaching the polymerization reaction solution include known methods such as coating, spraying, and immersion. Among them, the dipping method is preferred because the reaction solution can be uniformly adhered and impregnated on the porous anode body without unevenness.
- the immersion time in the reaction solution is usually about 1 second to 10 minutes, preferably 1 second to 5 minutes, and more preferably 1 second to 3 minutes. By dipping within this time range, the reaction solution is sufficiently impregnated in the fine pores of the porous anode body without unevenness.
- the temperature of the solution is usually 0 to 50 ° C., preferably 5 to 40 ° C., more preferably 10 to 35 ° C., although it depends on the type of solution. By immersing within this temperature range, the reaction solution is sufficiently impregnated in the porous anode body without unevenness.
- the conductive polymer is polymerized on the dielectric film by polymerizing the conductive polymer monomer while removing part or all of the solvent from the polymerization reaction solution attached to the porous anode body obtained in the above step.
- a solid electrolyte layer is formed.
- the removal of the solvent is preferably performed by a heat treatment method from the viewpoint of efficiency, and it is desirable to perform the removal under the condition that the conductive polymer is not deteriorated by oxygen.
- the heating conditions can be determined by the boiling point and volatility of the solvent.
- the method for forming a solid electrolyte layer containing a conductive polymer in the method for producing a solid electrolytic capacitor of the present invention is based on any of the following methods (i) to (iii).
- At least one compound (A1) represented by the general formula (1) is polymerized in the presence of a sulfo group-containing compound (B) without using an oxidizing agent.
- At least one compound (A2) represented by the general formula (2) is polymerized without using an oxidizing agent.
- At least one compound (A1) and at least one compound (A2) are copolymerized without using an oxidizing agent.
- At least one compound (A1) represented by the general formula (1) is polymerized on a valve metal surface having micropores without using an oxidant in the presence of a compound (B) having a sulfo group,
- a solid electrolytic capacitor can be manufactured by forming an electrolyte layer.
- the compound (A1) used in the present invention is a compound represented by the general formula (1).
- R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently (1) a hydrogen atom or (2) linear or branched having 1 to 20 carbon atoms.
- R 1 , R 2 , R 3 , R 4 , R 5 and R 6 examples include hydrogen atom, halogen atom, SO 2 M, alkyl group, alkoxy group, alkyl ester group, nitro group, cyano group. Groups and the like.
- examples of the halogen atom include fluorine, chlorine, bromine and iodine
- examples of the hydrocarbon chain of the alkyl group or alkyl ester group include methyl, ethyl, propyl, isopropyl, n -Butyl, isobutyl, t-butyl, pentyl, hexyl, octyl, dodecyl, tetradecyl, cyclopentyl, cyclohexyl and the like.
- alkoxy group examples include groups such as methoxy, ethoxy, (2-methoxy) ethoxy, propoxy, isopropoxy, hexyloxy, octyloxy, dodecyloxy and the like.
- the alkyl ester group includes an alkylcarbonyloxy group and an alkoxycarbonyl group.
- a malonate group —OCOCH 2 CO 2 H
- a fumarate group —OCOCH ⁇ CHCO 2 H, a double bond is Trans-type
- maleate group —OCOCH ⁇ CHCO 2 H, double bond is cis-type
- the alkylcarbonyloxy group and the alkyl of the alkoxycarbonyl group are methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, pentyl, hexyl, octyl, dodecyl, tetradecyl, cyclopentyl, cyclohexyl, etc. Also mentioned. Furthermore, examples of substituents other than those described above include amino groups such as methylamino, ethylamino, diphenylamino, and anilino, and groups such as trifluoromethyl, chlorophenyl, and acetamide.
- R 5 and R 6 are more preferably a hydrogen atom.
- R 1 , R 2 , R 3 and R 4 are more preferably at least two of the four are hydrogen atoms, more preferably at least three are hydrogen atoms, and particularly preferably all hydrogen atoms.
- the hydrocarbon chains in the substituents represented by R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are bonded to each other at an arbitrary position, and at least 1 together with the carbon atom to which the substituent is bonded. At least one divalent chain that forms a cyclic structure of two saturated or unsaturated hydrocarbons of 3 to 7 members may be formed.
- the alkyl group, alkoxy group, alkyl ester group represented by R 1 , R 2 , R 3 , R 4 , R 5 and R 6 , or the cyclic hydrocarbon chain formed by them include carbonyl, ether, ester, amide, It may contain at least one bond selected from sulfide, sulfinyl, sulfonyl and imino.
- hydrocarbon chain of the substituent R 1 , R 2 , R 3 , R 4 , R 5 or R 6 in the general formula (1) is bonded to each other at an arbitrary position to form a saturated or unsaturated 3- to 7-membered ring.
- Examples of forming a hydrocarbon cyclic structure include structures represented by the following formulas (3) to (5).
- k represents the number of condensed rings surrounded by a 1,3-dihydrothiophene-S-oxide ring and a benzene ring having the substituents R 1 to R 4 (general formula (1)), and represents an integer of 0 to 3 . From the viewpoint of solubility in a solvent, k is preferably 0.
- Specific examples of the basic skeleton portion excluding the substituents R 1 to R 6 of the compound represented by the general formula (1) include, for example, 1,3-dihydroisothianaphthene-S-oxide (a compound in which k is 0). Is mentioned.
- Examples of the compound represented by the general formula (1) include benzo [c] thiophene-1,3-dihydro-2-oxide, naphtho [2,3-c] thiophene-1,3- At least one selected from dihydro-2-oxide is preferably used.
- R 1A , R 2A , R 3A , R 4A , R 5A , R 6A and k are respectively R 1 , R 2 , R 3 , R in the general formula (1). 4 represents the same meaning as R 5 , R 6 and k.
- R 5A and R 6A are more preferably hydrogen atoms.
- R 1A , R 2A , R 3A and R 4A are more preferably at least two of the four are hydrogen atoms, more preferably at least three are hydrogen atoms, and particularly preferably all hydrogen atoms.
- the compound (B) having a sulfo group is considered to have dopant ability and catalytic ability by coexisting with the compound (A1).
- the compound (B) having a sulfo group is not particularly limited as long as it is a compound having one or more sulfo groups in the molecule.
- a low molecular sulfonic acid and a sulfonic acid polymer having one or more sulfo groups in the molecule can be mentioned.
- the sulfonate compound can be used after ion exchange.
- Examples of the low molecular sulfonic acid include sulfuric acid, alkyl sulfonic acid, benzene sulfonic acid, naphthalene sulfonic acid, anthraquinone sulfonic acid, camphor sulfonic acid, and derivatives thereof. These low molecular sulfonic acids may be monosulfonic acid, disulfonic acid or trisulfonic acid. Examples of the alkylsulfonic acid derivatives include 2-acrylamido-2-methylpropanesulfonic acid.
- Examples of the benzenesulfonic acid derivative include phenolsulfonic acid, styrenesulfonic acid, toluenesulfonic acid, dodecylbenzenesulfonic acid, and the like.
- Examples of the naphthalenesulfonic acid derivatives include 1-naphthalenesulfonic acid, 2-naphthalenesulfonic acid, 1,3-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, 6-ethyl-1-naphthalenesulfonic acid, and the like. Can be mentioned.
- anthraquinone sulfonic acid derivatives examples include anthraquinone-1-sulfonic acid, anthraquinone-2-sulfonic acid, anthraquinone-2,6-disulfonic acid, and 2-methylanthraquinone-6-sulfonic acid.
- 1-naphthalenesulfonic acid, 2-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, anthraquinonesulfonic acid, anthraquinone disulfonic acid, p-toluenesulfonic acid, and camphorsulfonic acid are preferable.
- polystyrene sulfonic acid examples include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly (2-acrylamide-2- Methyl propane sulfonic acid), polyisoprene sulfonic acid and the like. These may be homopolymers or two or more types of copolymers.
- polystyrene sulfonic acid polyisoprene sulfonic acid, polyacrylic acid ethyl sulfonic acid, and polyacrylic acid butyl sulfonic acid are preferable.
- a thing with a weight average molecular weight of 1,000,000 or less is preferable, More preferably, it is 500,000, More preferably, it is 300,000. If the weight average molecular weight is 1,000,000 or less, the solubility in the system is good and the handling is easy.
- the polymer having a sulfo group can alleviate the thermal decomposition of the conjugated conductive polymer, improve the dispersibility of the monomer for obtaining the conjugated conductive polymer in the dispersion medium, and further conjugated. It can function as a dopant for the conductive polymer. Only 1 type may be used for the compound (B) which has these sulfo groups, and 2 or more types may be used together.
- a conductive polymer can be obtained by polymerizing at least one compound (A1) in the presence of a compound (B) having a sulfo group.
- the proportion of the compound (B) having a sulfo group at the time of polymerization is preferably 1 to 400 mol, more preferably 5 to 300 mol, and still more preferably 10 to 250 mol with respect to 100 mol of the compound (A1).
- the proportion of the compound (B) is preferably 1 to 400 mol with respect to 100 mol of the compound (A1) from the viewpoints of reaction rate and reaction rate.
- a solid electrolytic capacitor is produced by polymerizing at least one compound (A2) represented by the general formula (2) on a valve metal surface having fine pores without using an oxidant to form a solid electrolyte layer. can do.
- the compound (A2) can be polymerized even if the compound (B) having a sulfo group is not present. It is presumed that this is because the compound (A2) is a structural unit of the conductive polymer, has itself a sulfo group, and has both dopant ability and catalytic ability.
- the compound (B) having the sulfo group may be included in addition to the compound (A2).
- the compound (A2) is a compound represented by the general formula (2).
- R 7 is a sulfo group.
- R 2 , R 3 , R 4 , R 5 , and R 6 are each independently (1) a hydrogen atom, (2) linear or branched alkyl having 1 to 20 carbon atoms, or 1 to 20 carbon atoms.
- M is OH or O
- - Na +, O - Li + and O - alkali metal alkoxide is selected from K +, O - NH 4 + in ammonium alkoxide represented, linear or branched having 1 to 20 carbon atoms
- useful substituents R 2 , R 3 , R 4 , R 5 and R 6 include a hydrogen atom, a halogen atom, SO 2 M, an alkyl group, an alkoxy group, an alkyl ester group, a nitro group, and a cyano group. Can be mentioned.
- examples of the halogen atom include fluorine, chlorine, bromine and iodine
- examples of the hydrocarbon chain of the alkyl group or alkyl ester group include methyl, ethyl, propyl, isopropyl, n- Examples include butyl, isobutyl, t-butyl, pentyl, hexyl, octyl, dodecyl, tetradecyl, cyclopentyl, cyclohexyl and the like.
- alkoxy group examples include groups such as methoxy, ethoxy, (2-methoxy) ethoxy, propoxy, isopropoxy, hexyloxy, octyloxy, dodecyloxy and the like.
- the alkyl ester group includes an alkylcarbonyloxy group and an alkoxycarbonyl group.
- a malonate group —OCOCH 2 CO 2 H
- a fumarate group —OCOCH ⁇ CHCO 2 H, a double bond is Trans-type
- maleate group —OCOCH ⁇ CHCO 2 H, double bond is cis-type
- the alkylcarbonyloxy group and the alkyl of the alkoxycarbonyl group are methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, pentyl, hexyl, octyl, dodecyl, tetradecyl, cyclopentyl, cyclohexyl, etc. Also mentioned. Furthermore, examples of substituents other than those described above include amino groups such as methylamino, ethylamino, diphenylamino, and anilino, and groups such as trifluoromethyl, chlorophenyl, and acetamide.
- the hydrocarbon chains in the substituents represented by R 2 , R 3 , R 4 , R 5 and R 6 are bonded to each other at any position, and together with the carbon atom to which the substituent is bonded, at least one 3 to You may form at least 1 bivalent chain
- the alkyl group, alkoxy group, alkyl ester group represented by R 2 , R 3 , R 4 , R 5 and R 6 , or the cyclic hydrocarbon chain formed by them include carbonyl, ether, ester, amide, sulfide, sulfinyl. , At least one bond selected from sulfonyl and imino.
- the hydrocarbon chain of the substituent R 2 , R 3 , R 4 , R 5 or R 6 in the general formula (2) is bonded to each other at an arbitrary position to form a 3- to 7-membered saturated or unsaturated hydrocarbon.
- Examples of forming a cyclic structure include structures represented by formulas (6) to (8).
- R 7A is a sulfo group.
- R 2A , R 3A , R 4A , R 5A , R 6A and k represent the same meaning as R 2 , R 3 , R 4 , R 5 , R 6 and k in the general formula (2), respectively.
- R 5A and R 6A are more preferably hydrogen atoms.
- R 2A , R 3A and R 4A are more preferably at least two of three hydrogen atoms, and particularly preferably all hydrogen atoms.
- k represents the number of condensed rings surrounded by a heterocycle and a benzene ring having substituents R 2 to R 4 , and is an integer of 0 to 3. From the viewpoint of solubility in a solvent, k is preferably 0.
- Specific examples of the basic skeleton part excluding the substituents R 2 to R 7 of the compound represented by the general formula (2) include, for example, 1,3-dihydroisothianaphthene-S-oxide (compound in which k is 0). Can be mentioned.
- Examples of the compound represented by the general formula (2) include benzo [c] thiophene-1,3-dihydro-2-oxide-4-sulfonic acid, benzo [c] thiophene-1,3-dihydro-2-oxide.
- R 5 and R 6 are more preferably a hydrogen atom.
- R 2 , R 3 and R 4 are more preferably at least one of three is a hydrogen atom, more preferably at least two are hydrogen atoms, and particularly preferably all hydrogen atoms.
- benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid benzo [c] thiophene-1,3-dihydro-2-oxide-5,6-disulfonic acid Is mentioned.
- a compound (A2) can be used individually by 1 type or in combination of 2 or more types.
- ⁇ Method (iii)> By copolymerizing at least one of the compound (A1) and at least one of the compound (A2) on a valve metal surface having micropores without using an oxidizing agent, to form a solid electrolyte layer A solid electrolytic capacitor can be manufactured.
- the compound (B) having the sulfo group may be included.
- the proportion of compound (A2) during polymerization is preferably 1 to 400 mol, more preferably 5 to 300 mol, and still more preferably 10 to 250 mol, per 100 mol of compound (A1).
- the proportion of the compound (B) is preferably 1 to 400 mol with respect to 100 mol of the compound (A1) from the viewpoints of reaction rate and reaction rate.
- the performance according to the purpose such as solvent affinity and solubility of the conductive polymer can be easily adjusted.
- benzo [c] thiophene-1,3-dihydro-2-oxide as compound (A1) and benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid as compound (A2) Since these two have different degrees of water solubility, the higher the proportion of benzo [c] thiophene-1,3-dihydro-2-oxide, the higher the water solubility of the resulting conductive polymer. Decreases and becomes insoluble. Also, as the proportion of benzo [c] thiophene-1,3-dihydro-2-oxide increases, the crystallized region in the polyisothianaphthene skeleton increases and the conductivity tends to improve.
- solvent (C) In the polymerization according to the present invention, it is preferable to use a solvent from the viewpoint of material diffusion.
- the solvent used is not particularly limited as long as the monomer used is soluble.
- examples include glycerol (glycerin), diglycerol (diglycerin), and polyethylene glycol.
- water, methanol, ethanol, isopropanol, dimethylformamide, ethylene glycol and dimethyl sulfoxide are preferable, and water, ethanol, isopropanol, ethylene glycol and dimethyl sulfoxide are more preferable.
- a solvent having a boiling point higher than that of water As a part or all of the solvent, those having a boiling point of 105 ° C. or higher are preferable.
- toluene (boiling point: 111 ° C.), butanol (boiling point: 118 ° C.), acetic acid (boiling point: 118 ° C.), acetic anhydride (boiling point: 140 ° C.), dimethylformamide (boiling point: 153 ° C.), dimethyl Sulfoxide (boiling point: 189 ° C), ⁇ -butyrolactone (boiling point: 203 ° C), propylene carbonate (boiling point: 240 ° C), sulfolane (boiling point: 285 ° C), N-methylpyrrolidone (boiling point: 202 ° C), dimethylsulfolane (boiling point) : 233 ° C), butanediol (boiling point: 230 ° C), ethylene glycol (boiling point: 198 ° C),
- polyethylene glycol such as polyethylene glycol 400, polyethylene glycol 600, and polyethylene glycol 1500 (the number after polyethylene glycol represents the molecular weight), does not have a boiling point under normal pressure, but is volatile under reduced pressure. Include what you do. In addition, when the boiling point is indicated, the pressure not indicated in parentheses is the boiling point under normal pressure. Of these solvents having a boiling point higher than water, ethylene glycol or dimethyl sulfoxide, which is miscible with water and does not azeotrope, is preferable from the viewpoint of easy handling and drying and acid resistance. By using a solvent having a higher boiling point for a part or all of the solvent, it is presumed that the reaction rate is improved without hindering the diffusion of substances even when water generated in the polymerization reaction volatilizes.
- the proportion of the solvent (C) in the reaction system is preferably 5 to 99% by mass, more preferably 30 to 95% by mass. When the proportion of the solvent (C) in the reaction system is 5 to 99% by mass, the reaction rate and reaction rate are good.
- the solid content concentration of the solution varies depending on the composition, the solid content after polymerization is preferably 0.01 to 60% by mass, more preferably 0.1 to 50% by mass, and further preferably 1 to 30% by mass. is there.
- the concentration of the solution is within this range, the polymerization can be performed at an appropriate reaction rate, and the conductive polymer can be produced stably and economically, and the storage stability of the solution is improved.
- the upper limit of the concentration of each solution is not limited to this, and any solution is between 0.01 and 100% by mass.
- the solvent having a boiling point higher than that of water is preferably 0.1 to 99.5% by mass, more preferably 1 to 80% by mass, and further preferably 5 to 70% by mass with respect to the total amount of the solvent (C). It is.
- the ratio of the solvent (C) in the reaction system is 0.1 to 99.5% by mass, the reaction can be performed with high productivity.
- azeotropes with water when mixed with water.
- These solvents may be used alone or in combination of two or more.
- Compounds (D) include isothianaphthene, isobenzofuran, isobenzoindoline, isobenzoselenaphene, isobenzoterenaphene, thiophene, pyrrole, furan, selenophene, tellurophene, aniline, benzene, naphtho [2,3-c] thiophene , Anthra [2,3-c] thiophene, naphthaceno [2,3-c] thiophene, pentaseno [2,3-c] thiophene, perilo [2,3-c] thiophene, acenaphtho [2,3-c] thiophene Aromatic compounds such as 1,3-dihydroisothianaphthene, 1,3-dihydronaphtho [2,3-c] thiophene, 1,3-dihydroanthra [2,3-c
- the compound (D) that can be copolymerized with the compounds (A1) and (A2) is preferably used in an amount of 200 mol% or less, based on the total number of moles of the compound (A1) and the compound (A2), and is 100 mol%. More preferably, it is more preferably 50 mol% or less. If it is 200 mol% or less, the reaction rate and the reaction rate are appropriate.
- Additives having other functions may be mixed during the reaction as long as the effects of the present invention are not impaired.
- a surfactant, a thickener, a thixotropic agent, a rheology control agent, or the like may be added in order to impart functionality such as coating property, impregnation property, and permeability to the conductive polymer.
- a binder or the like may be added. You may use the component which has the performance which relieve
- These additives may have a substituent. Examples thereof include dodecylbenzenesulfonic acid, polyvinyl alcohol, poly (N-vinylacetamide), polyacrylamide, and polyacrylic acid.
- An additive can be used individually by 1 type or in combination of 2 or more types.
- an oxidizing agent is usually used in the polymerization step of the conductive polymer for forming the solid electrolyte layer, but no oxidizing agent is used in the polymerization step of the conductive polymer of the present invention.
- an oxidizing agent used in the prior art for example, ferric chloride, ferric sulfate, ferric nitrate, ethylenediaminetetraacetic acid iron, cupric chloride, cuprous chloride, ethylenediaminetetraacetic acid copper Metal oxides such as aluminum chloride; halogens such as iodine and bromine; 2,3-dichloro-5,6-dicyano-1,4-benzoquinone, tetrachloro-1,2-benzoquinone, tetrachloro-1, Quinones such as 4-benzoquinone and tetracyano-1,4-benzoquinone; inorganics such as sulfuric acid, fuming sulfuric acid, sulfur trioxide
- an oxidizing agent is used in order to polymerize in the presence of a compound (B) having a sulfo group having catalytic ability, or to polymerize a compound (A) having a substituent (sulfo group) having catalytic ability. If necessary, the purification step after the reaction can be omitted.
- the use of impurity components other than the oxidizing agent is not hindered as long as it does not adversely affect the capacitor characteristics.
- the temperature during the polymerization in the above method is not particularly limited, but is preferably 10 to 300 ° C, more preferably 20 to 180 ° C, still more preferably 60 to 180 ° C. If the temperature during polymerization is 10 to 300 ° C., the reaction rate, reaction rate, and viscosity are appropriate, side reactions can be suppressed, and the production of the conductive polymer is stable and industrially suitable. It can be carried out in time, and the conductivity of the resulting conductive polymer also tends to increase. From the viewpoint of capacitor characteristics, it is desirable from the viewpoint of reducing leakage current. A known hot plate, heater, cooler, oven, hot air dryer or the like can be used for the heat treatment during the polymerization.
- the polymerization may be performed while changing the temperature within the above range.
- the atmosphere in which the heat treatment is performed is not particularly limited, but is preferably in the air.
- the pressure during the heat treatment is not particularly limited, but is preferably atmospheric pressure, and may be performed under reduced pressure in order to perform it quickly.
- the temperature may be lower than the polymerization temperature, or the solvent may be volatilized under reduced pressure or in a dry air stream, and then raised to the polymerization temperature.
- you may repeat the process of attaching a polymerization reaction solution on said dielectric film, and the formation process of a solid electrolyte layer each twice or more.
- heat treatment may be performed each time the reaction solution is adhered, and a part or all of the dispersion medium may be removed.
- the reaction solution may be adhered continuously several times, and finally the heat treatment is performed to remove the solution. May be.
- the atmosphere in the above polymerization is not particularly limited, and may be in the air or an inert gas atmosphere such as nitrogen or argon.
- the reaction pressure is not particularly limited, but normal pressure is preferred.
- There is no particular limitation on the reaction time and since it varies depending on the chemical structure of the compound, reaction temperature, reaction pressure, etc., it cannot be defined unconditionally, but it is preferably 5 seconds to 5 hours, more preferably 30 seconds to 2 hours, and even more preferably. Is 1 minute to 1 hour. It is desirable to perform the heat treatment within this time range in terms of sufficiently volatilizing the solvent, in terms of reaction efficiency in the porous anode body, in suppressing side reactions, and in reducing leakage current.
- the pH during the reaction is preferably 1 to 7, more preferably 1 to 5, and still more preferably 1 to 3.
- the pH is 1 or more, the load on the anode body or the like is small, and when the pH is 7 or less, the reaction rate and reaction rate are appropriate.
- the compound (A1), the compound (A2), the compound selected from the compound (B) having a sulfo group, the solvent (C) and the compound (A1) which are optional components
- the polymerization can also be performed by immersing or coating each compound in order on the dielectric coating of the porous anode body.
- the reaction it is preferable to carry out the reaction while removing by-products from the reaction system.
- By-products can be removed by volatilization (evaporation), adsorption, or other separation methods.
- water is generated as a by-product. Therefore, when the reaction is performed while distilling off the water, the polymerization rate increases and the reaction rate also increases. .
- washing may be performed by infiltrating an arbitrary solvent or the like, but in the polymerization step of the conductive polymer for forming the solid electrolyte layer of the present invention, an oxidizing agent ( Since no Fe (III) compound or the like is used, high capacitor characteristics can be obtained without performing a purification step.
- the storage temperature of the reaction solution before the polymerization is not particularly limited, but is usually ⁇ 30 to 50 ° C., preferably ⁇ 20 to 40 ° C., more preferably ⁇ 10 to 30 ° C. When the storage temperature of the solution is in this range, the rate at which polymerization proceeds due to the effect of a strong acid during storage can be moderated.
- the atmosphere at the time of storage is not particularly limited, and may be in the air or an inert atmosphere such as nitrogen or argon. Of these, nitrogen and argon are preferred.
- the temperature range when the monomer solution, the dopant, and the catalyst solution are separated and mixed and used during polymerization is not limited to this, and stable storage is possible in a wider temperature range.
- the formation of the solid electrolyte layer in the present invention may be performed by combining the method of the present invention and a conventional method of forming a solid electrolyte layer. That is, after a solid electrolyte layer is partially formed by the method of the present invention on a porous anode body having a dielectric coating on its surface, a conductive polymer dispersion (for example, poly (3,4-ethylenedioxythiophene) is used. ) / Poly (styrenesulfonic acid) aqueous dispersion) or the like, or an electrolytic polymerization method may be used to form the solid electrolyte layer.
- a conductive polymer dispersion for example, poly (3,4-ethylenedioxythiophene
- Poly (styrenesulfonic acid) aqueous dispersion) or the like, or an electrolytic polymerization method may be used to form the solid electrolyte layer.
- the solid electrolyte layer may be formed by the method of the present invention after the solid electrolyte layer is partially formed by the conventional method.
- the method for forming a solid electrolyte layer of the present invention can also be used in the manufacture of a hybrid electrolytic capacitor in which an electrolyte is used in combination with a solid electrolyte layer of a conductive polymer and an electrolyte.
- conductor layer It is preferable to form a conductor layer on the solid electrolyte layer formed as described above in order to obtain good electrical contact with the cathode lead.
- the conductor layer include a carbon paste layer, a silver paste layer, a metal plating layer, a metal vapor deposition layer, and a conductive resin film.
- a cathode lead is electrically connected to the conductor layer, and a part of the cathode lead is exposed outside the exterior of the capacitor to become a cathode external terminal.
- an anode lead is electrically connected to the anode body via an anode lead wire, and a part of the anode lead is exposed to the outside of the exterior of the capacitor and becomes an anode external terminal.
- a normal lead frame can be used to attach the cathode lead and the anode lead. Subsequently, the exterior can be formed by sealing with resin or the like to obtain a capacitor.
- Example 1 Formation of Porous Anode Body Having Dielectric Film on Surface The porous anode body having a dielectric film on the surface used for the solid electrolytic capacitor in the present invention is disclosed in Japanese Patent Application Laid-Open No. 2011-77257. Produced following. That is, a porous anode body in which a dielectric film having niobium pentoxide was formed on the anode body surface using niobium powder for a capacitor was produced. This porous anode body had a capacitance of 37.9 ⁇ F in 40% sulfuric acid in accordance with the method described in EIAJ standard RC2361A (revised in February 2000).
- Example 2 Benzo [c] thiophene-1,3-dihydro-2-oxide (3.2 g) is dissolved in ethanol (74.5 g), p-toluenesulfonic acid monohydrate (0.80 g) is added, and a polymerization reaction solution (“Oxide / Abbreviated as “TSA 5/1”).
- TSA 5/1 a polymerization reaction solution
- a capacitor was prepared in the same manner as in Example 1 except for the preparation of the above solution, and the capacitance was measured. The measurement results are shown in Table 1.
- Comparative Example 1 Dissolve 2.5 g of dihydroisothianaphthene (DHITN) in 77.4 g of ethanol, add 1.75 g of p-toluenesulfonic acid monohydrate (TSA), and add a polymerization reaction solution (“DHITN / TSA 2/1”). Abbreviated).
- DHITN dihydroisothianaphthene
- TSA p-toluenesulfonic acid monohydrate
- a capacitor was prepared in the same manner as in Example 1 except for the preparation of the above solution, and the capacitance was measured. The measurement results are shown in Table 1.
- Comparative Example 2 3.2 g of dihydroisothianaphthene (DHITN) was dissolved in 74.5 g of ethanol, 0.89 g of p-toluenesulfonic acid monohydrate (TSA) was added, and a polymerization reaction solution (“DHITN / TSA 5/1”) was added. Abbreviated). A capacitor was prepared in the same manner as in Example 1 except for the preparation of the above solution, and the capacitance was measured. The measurement results are shown in Table 1.
- DHITN dihydroisothianaphthene
- TSA p-toluenesulfonic acid monohydrate
- Example 3 A capacitor was produced in the same manner as in Example 1 except that the impregnation operation was performed 10 times, and the capacitance was measured. The measurement results are shown in Table 1.
- Example 4 A capacitor was produced in the same manner as in Example 2 except that the impregnation operation was performed 10 times, and the capacitance was measured. The measurement results are shown in Table 1.
- Comparative Example 3 A capacitor was produced in the same manner as in Comparative Example 1 except that the number of impregnation operations was 10, and the capacitance was measured. The measurement results are shown in Table 1.
- Comparative Example 4 A capacitor was produced in the same manner as in Comparative Example 2 except that the number of impregnation operations was 10, and the capacitance was measured. The measurement results are shown in Table 1.
- Example 1 by comparing Example 1 and Comparative Example 1, Example 2 and Comparative Example 2, Example 3 and Comparative Example 3, Example 4 and Comparative Example 4, respectively, the benzo [c] thiophene of the present invention It can be seen that forming a solid electrolyte layer by homopolymerization using 1,3-dihydro-2-oxide provides a larger capacity than using dihydroisothianaphthene.
- Example 5 Preparation of aqueous solution for preparing a polymerization reaction solution 35.9 g of benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid sodium salt was added to 266 g of ion-exchanged water, dissolved, and then cation Sodium was ion-exchanged with hydrogen through a column packed with an exchange resin (H type) to obtain an aqueous benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid solution.
- H type exchange resin
- Example 6 19 g of benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid aqueous solution, 10 g of benzo [c] thiophene-1,3-dihydro-2-oxide aqueous solution, and 29 g of ethylene glycol were mixed. A polymerization reaction solution (abbreviated as “SH-Oxide / Oxide 5/5”) was prepared. Otherwise, a capacitor was produced in the same manner as in Example 5, and the electrical characteristics (capacitance and ESR) were measured. The measurement results are shown in Table 2.
- Example 7 Mix 8.0g of benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid aqueous solution, 10g of benzo [c] thiophene-1,3-dihydro-2-oxide aqueous solution, and 18g of ethylene glycol
- a polymerization reaction solution (abbreviated as “SH-Oxide / Oxide 3/7”) was prepared.
- a capacitor was prepared in the same manner as in Example 5, and the electrical characteristics were measured. The measurement results are shown in Table 2.
- Comparative Example 5 A capacitor was produced in the same manner as in Example 5 except that the polymerization reaction solution was changed to a commercially available poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) dispersion (PEDOT / PSS dispersion). The electrical characteristics were measured. The measurement results are shown in Table 2.
- the solid electrolyte layer was obtained by copolymerization of benzo [c] thiophene-1,3-dihydro-2-oxide-5-sulfonic acid and benzo [c] thiophene-1,3-dihydro-2-oxide of the present invention. It can be seen that Examples 5 to 7 that form the film have a higher capacity than Comparative Example 5 using the PEDOT / PSS dispersion, and in particular, Example 5 provides a very low ESR value.
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Abstract
Description
陽極体として使用される弁金属の例としては、アルミニウム、タンタル、ニオブ等が知られている。
固体電解質層としては、ポリアセチレン、ポリチオフェン、ポリアニリン、ポリピロール、ポリフェニレン、ポリ(p-フェニレン-ビニレン)等に代表されるπ共役系高分子に、電子受容性化合物をドーパントとしてドープした導電性高分子材料が開発され、例えば、帯電防止剤、コンデンサの固体電解質、導電性塗料、エレクトロクロミック素子、電極材料、熱電変換材料、透明導電膜、化学センサ、アクチュエータ等への応用が検討されている。中でも、化学的安定性の面からポリチオフェンが有用である。
特開2002-158144号公報(US 6,614,063;特許文献3)には、重合性モノマーの化学重合により導電性高分子層の固体電解質層を形成する際に発生する残渣による性能低下(ESRの劣化)を解決するために、形成した重合膜をシャワー洗浄した後乾燥して残渣を除去する方法が開示されている。
本発明の課題は、特に低ESR、高容量達成率、低漏れ電流などの特性が優れた固体電解コンデンサを得るために、導電性高分子を含む固体電解質膜の形成において、煩雑な重合工程、成膜工程及び精製工程を採らずに簡易な工程で導電性高分子を含む固体電解質膜を形成する製造方法を提供することである。
[1]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に下記一般式(1)
で示される化合物(A1)の少なくとも1種を、スルホ基を有する化合物(B)の存在下で、酸化剤を使用せずに重合させることにより前記導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[2]前記化合物(A1)が、式(1)中のkが0である化合物である前項1に記載の固体電解コンデンサの製造方法。
[3]一般式(1)中のR1、R2、R3、R4、R5及びR6が、それぞれ独立して、(1)水素原子、(2)炭素数1~20の直鎖状または分岐状のアルキル基、炭素数1~20の直鎖状または分岐状のアルコキシ基、または炭素数1~20の直鎖状または分岐状のアルキルエステル基、及び(3)ハロゲン原子から選択される1価の置換基である前項1または2に記載の固体電解コンデンサの製造方法。
[4]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に下記一般式(2)
で示される化合物(A2)の少なくとも1種を、酸化剤を使用せずに重合させて前記導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[5]前記化合物(A2)が、一般式(2)中のkが0である化合物である前項4に記載の固体電解コンデンサの製造方法。
[6]前記化合物(A2)が、一般式(2)中のR2、R3、R4、R5及びR6が、それぞれ独立して、(1)水素原子、(2)炭素数1~20の直鎖状または分岐状のアルキル基、炭素数1~20の直鎖状または分岐状のアルコキシ基、または炭素数1~20の直鎖状または分岐状のアルキルエステル基、及び(3)ハロゲン原子から選択される1価の置換基である化合物である前項4または5に記載の固体電解コンデンサの製造方法。
[7]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に、前項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と、前項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[8]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に前項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と前記化合物(A1)と共重合し得る化合物(D)とを、スルホ基を有する化合物(B)の存在下で、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[9]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に前項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種と前記化合物(A2)と共重合し得る化合物(D)とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[10]微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に前項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と、前項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種と、前記化合物(A1)及び前記化合物(A2)と共重合し得る化合物(D)とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。
[11]生成する水を除去しながら重合させて導電性高分子を含む固体電解質層を形成する前項1~10のいずれかに記載の固体電解コンデンサの製造方法。
[12]前記導電性高分子の重合において、水よりも蒸気圧の高い溶媒を使用する前項1~10のいずれかに記載の固体電解コンデンサの製造方法。
(1)微細孔を有する弁金属表面の誘電体被膜上に、煩雑な重合工程、成膜工程及び精製工程を採らずに簡易な工程で導電性高分子を含む固体電解質膜を形成することができる。
(2)低ESR、高容量達成率、低漏れ電流の特性に優れた固体電解コンデンサを提供することができる。
本発明の固体電解コンデンサの製造方法は、陽極体として微細孔を有する弁金属を用意する工程、微細孔を有する弁金属の表面に誘電体被膜を形成する工程、誘電体被膜上に導電性高分子を含む固体電解質層を形成するための重合反応液を付着させる工程、導電性高分子の重合反応を行い誘電体被膜上に固体電解質層を形成する工程、及び固体電解質層の上に導電ペーストにより導体層を形成する工程を含む。
本発明の固体電解コンデンサの製造方法で陽極体として使用する弁金属としては、アルミニウム(Al)、ベリリウム(Be)、ビスマス(Bi)、マグネシウム(Mg)、ゲルマニウム(Ge)、ハフニウム(Hf)、ニオブ(Nb)、アンチモン(Sb)、ケイ素(Si)、スズ(Sn)、タンタル(Ta)、チタン(Ti)、バナジウム(V)、タングステン(W)及びジルコニウム(Zr)、並びにこれらの金属の少なくとも1つと他の元素との合金または化合物が挙げられる。これらの中で、アルミニウム、ニオブ、タンタル、ケイ素、タングステンが好ましく、アルミニウム、ニオブ、タンタルがより好ましい。
陽極体の形態は、エッチングを行った圧延箔、微粉の焼結体などのように微細孔を有する成形体の形態であればよい。以下、本明細書においては、微細孔を有する弁金属を多孔性陽極体と呼ぶことがある。
上記の多孔性陽極体は、その外部表面及び微細孔内の金属表面に酸化物からなる誘電体被膜が形成される。誘電体被膜は、以下のように多孔性陽極体の表面(微細孔の内表面を含む)の陽極酸化によって形成することができる。
多孔性陽極体は、例えばリン酸溶液中で電圧を印加することにより陽極酸化(化成処理)され、表面(微細孔の内表面を含む)に誘電体被膜を形成することができる。誘電体被膜の厚さやコンデンサの耐電圧により、化成電圧の大きさを決めることができる。好ましい化成電圧は1~800Vであり、より好ましくは1~300Vであり、より好ましくは1~100Vである。この範囲内で化成処理することは、化成層の厚さや耐電圧の点から望ましい。
多孔性陽極体の表面に形成された誘電体被膜の上には、さらに導電性高分子を含む固体電解質層が形成される。そのためには、先ず多孔性陽極体表面の誘電体被膜上に、固体電解質層形成のための重合反応溶液(導電性高分子モノマーを重合させるための反応液)を付着させる。
反応溶液への浸漬時間は、通常1秒~10分間程度であり、好ましくは1秒~5分間であり、より好ましくは1秒~3分間である。この時間範囲内で浸漬することにより、多孔性陽極体の微細孔内に反応溶液がムラなく十分に含浸する。また、溶液の温度は溶液の種類にもよるが通常0~50℃であり、好ましくは5~40℃であり、より好ましくは10~35℃である。この温度範囲内で浸漬することにより、多孔性陽極体内に反応溶液がムラなく十分に含浸する。
上記の工程で得られた多孔性陽極体に付着した重合反応溶液から、溶剤の一部または全部を除去しながら導電性高分子モノマーを重合させることにより、誘電体被膜上に導電性高分子を含む固体電解質層を形成させる。
溶剤の除去は、効率の点で加熱処理法によって行うことが好ましく、導電性高分子重合体の酸素による劣化のない条件で行うことが望ましい。加熱条件は、溶剤の沸点や揮発性により決めることができる。
(i)一般式(1)で示される化合物(A1)の少なくとも1種を、スルホ基を有する化合物(B)の存在下で酸化剤を使用せずに重合させる。
(ii)一般式(2)で示される化合物(A2)の少なくとも1種を、酸化剤を使用せずに重合させる。
(iii)化合物(A1)の少なくとも1種と(A2)の少なくとも1種とを、酸化剤を使用せずに共重合させる。
一般式(1)で示される化合物(A1)の少なくとも1種を、スルホ基を有する化合物(B)の存在下、酸化剤を使用せずに微細孔を有する弁金属表面上で重合させ、固体電解質層を形成することにより固体電解コンデンサを製造することができる。
さらに、前記以外の置換基の例として、メチルアミノ、エチルアミノ、ジフェニルアミノ、アニリノ等のアミノ基、トリフルオロメチル、クロロフェニル、アセトアミド等の基が挙げられる。
R5及びR6は水素原子であることがより好ましい。R1、R2、R3、R4は4つのうち少なくとも2つは水素原子であることがより好ましく、少なくとも3つが水素原子であることがさらに好ましく、全て水素原子であることが特に好ましい。
R1、R2、R3、R4、R5及びR6が表すアルキル基、アルコキシ基、アルキルエステル基、またはそれらによって形成される環状炭化水素鎖には、カルボニル、エーテル、エステル、アミド、スルフィド、スルフィニル、スルホニル及びイミノから選択される少なくとも1つの結合を含んでもよい。
化合物(A1)は、1種単独でまたは2種以上を組み合わせて用いることができる。
R5A及びR6Aは水素原子であることがより好ましい。R1A、R2A、R3A、R4Aは4つのうち少なくとも2つは水素原子であることがより好ましく、少なくとも3つが水素原子であることがさらに好ましく、全て水素原子であることが特に好ましい。
スルホ基を有する化合物(B)は、化合物(A1)と共存させることで、ドーパント能や触媒能を持つと考えられる。スルホ基を有する化合物(B)としては、分子内に1つ以上のスルホ基を有する化合物であれば特に限定されない。例えば、低分子スルホン酸、分子内に1つ以上のスルホ基を有するスルホン酸ポリマーが挙げられる。スルホン酸塩の化合物は、イオン交換して用いることができる。
スルホ基を有するポリマーの分子量に特に制限はないが、重量平均分子量が1,000,000以下のものが好ましく、より好ましくは500,000であり、さらに好ましくは300,000である。重量平均分子量が1,000,000以下であれば、系への溶解性が良好であるため取扱いが容易である。
これらのスルホ基を有する化合物(B)は1種のみを用いてもよく、2種以上を併用してもよい。
一般式(2)で示される化合物(A2)の少なくとも1種を、酸化剤を使用せずに微細孔を有する弁金属表面上で重合させ、固体電解質層を形成することにより固体電解コンデンサを製造することができる。化合物(A2)はスルホ基を有する化合物(B)が存在しなくとも重合が可能である。これは化合物(A2)が導電性高分子の構成単位である他、それ自体がスルホ基を有し、ドーパント能や触媒能も併せ持つためであると推測される。なお、方法(ii)においても、前記化合物(A2)の他に前記スルホ基を有する化合物(B)を含んでいてもよい。
化合物(A2)は、一般式(2)で示される化合物である。
置換基R2、R3、R4、R5及びR6として有用な例としては、水素原子、ハロゲン原子、SO2M、アルキル基、アルコキシ基、アルキルエステル基、ニトロ基、シアノ基等が挙げられる。
さらに、前記以外の置換基の例として、メチルアミノ、エチルアミノ、ジフェニルアミノ、アニリノ等のアミノ基、トリフルオロメチル、クロロフェニル、アセトアミド等の基が挙げられる。
R2、R3、R4、R5及びR6が表す置換基中の炭化水素鎖は互いに任意の位置で結合して、当該置換基が結合している炭素原子と共に、少なくとも1つの3~7員環の飽和、または不飽和炭化水素の環状構造を形成する2価鎖を少なくとも1つ形成してもよい。R2、R3、R4、R5及びR6が表すアルキル基、アルコキシ基、アルキルエステル基、またはそれらによって形成される環状炭化水素鎖には、カルボニル、エーテル、エステル、アミド、スルフィド、スルフィニル、スルホニル及びイミノから選択される少なくとも1つの結合を含んでもよい。
R5A及びR6Aは水素原子であることがより好ましい。R2A、R3A、R4Aは3つのうち少なくとも2つは水素原子であることがより好ましく、全て水素原子であることが特に好ましい。
一般式(2)で示される化合物としては、例えば、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-4-スルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5,6-ジスルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-4,5-ジスルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-4,6-ジスルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-4,7-ジスルホン酸等が挙げられる。
具体的には、例えば、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5,6-ジスルホン酸が挙げられる。
化合物(A2)は、1種単独でまたは2種以上を組み合わせて用いることができる。
前記化合物(A1)の少なくとも1種及び前記化合物(A2)の少なくとも1種を、酸化剤を使用せずに微細孔を有する弁金属表面上で共重合させて、固体電解質層を形成することにより固体電解コンデンサを製造することができる。なお、方法(iii)においても、前記スルホ基を有する化合物(B)を含んでいてもよい。
重合時の化合物(A2)の割合は、前記化合物(A1)100モルに対して好ましくは1~400モル、より好ましくは5~300モル、さらに好ましくは10~250モルである。化合物(B)の割合は、前記化合物(A1)100モルに対して1~400モルであれば、反応率、反応速度の面から好ましい。
例えば、化合物(A1)としてベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシドと、化合物(A2)としてベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸との共重合を行うと、これら2つは水溶性の程度が異なるため、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシドの割合が高くなるにつれ、生成する導電性高分子の水溶性が低下し、不溶化する。
また、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシドの割合が高くなるにつれ、ポリイソチアナフテン骨格中の結晶化領域が大きくなり、電導度が向上する傾向がある。
[溶媒(C)]
本発明による重合において、物質拡散の観点では溶媒を使用することが好ましい。使用される溶媒は用いるモノマーが溶解する溶媒であれば良く、特に限定されない。例えば、水、メタノール、エタノール、イソプロパノール、トルエン、ブタノール、酢酸、無水酢酸、ジメチルホルムアミド、ジメチルスルホキシド、γ-ブチロラクトン、プロピレンカーボネート、スルホラン、N-メチルピロリドン、ジメチルスルホラン、ブタンジオール、エチレングリコール、ジエチレングリコール、グリセロール(グリセリン)、ジグリセロール(ジグリセリン)、ポリエチレングリコールなどが挙げられる。
工業的な取扱いの容易さの観点では、水、メタノール、エタノール、イソプロパノール、ジメチルホルムアミド、エチレングリコール、ジメチルスルホキシドが好ましく、さらに水、エタノール、イソプロパノール、エチレングリコール、ジメチルスルホキシドがより好ましい。
水よりも高沸点の溶媒としては、沸点が105℃以上のものが好ましい。具体的には、例えば、トルエン(沸点:111℃)、ブタノール(沸点:118℃)、酢酸(沸点:118℃)、無水酢酸(沸点:140℃)、ジメチルホルムアミド(沸点:153℃)、ジメチルスルホキシド(沸点:189℃)、γ-ブチロラクトン(沸点:203℃)、プロピレンカーボネート(沸点:240℃)、スルホラン(沸点:285℃)、N-メチルピロリドン(沸点:202℃)、ジメチルスルホラン(沸点:233℃)、ブタンジオール(沸点:230℃)、エチレングリコール(沸点:198℃)、ジエチレングリコール(沸点:244℃)、グリセロール(グリセリン、沸点:290℃)、ジグリセロール(ジグリセリン、沸点:265℃(15mmHg))、ポリエチレングリコールなどが挙げられる。なお、ポリエチレングリコールは、ポリエチレグリコール400、ポリエチレングリコール600、ポリエチレングリコール1500(ポリエチレングリコールの後の数字は分子量を表す。)などのように常圧下では沸点が存在しないものもあるが、減圧下で揮発するものも含めるものとする。また、沸点を示す際に、圧力を括弧書きで付記していないものは常圧下での沸点である。これらの水よりも高沸点の溶媒のうち、取扱いや乾燥の容易さ、耐酸性という観点から、水と混和し、共沸しないエチレングリコール、またはジメチルスルホキシドが好ましい。
より高沸点の溶媒を溶媒の一部または全部に使用することにより、重合反応で発生する水が揮発する際も物質の拡散が妨げられることなく、反応率が改善すると推測される。
また、後述のようにモノマー溶液とドーパント、触媒溶液を分け、重合時に混合して使用する場合の各溶液の濃度上限値はこの限りではなく、いずれの溶液も0.01~100質量%の間で使用することができる。
また、水よりも高沸点の溶媒は、溶媒(C)全量に対して0.1~99.5質量%が好ましく、より好ましくは1~80質量%であり、さらに好ましくは5~70質量%である。反応系における溶媒(C)の割合が0.1~99.5質量%であれば、生産性良く反応が可能である。
方法(i)から(iii)においては、化合物(A1)及び/または(A2)と、化合物(A1)及び(A2)と共重合し得る化合物(D)を共重合させることができる。方法(i)においてはスルホ基を有する化合物(B)の存在下で化合物(A1)と(D)を、方法(ii)においては化合物(A2)と(D)を、方法(iii)においては化合物(A1)と(A2)と(D)を、それぞれ共重合できる。
本発明による効果を阻害しない範囲内で、反応時にその他の機能を有する添加剤を混合してもよい。例えば、導電性高分子に塗工性や含浸性、浸透性等の機能性を付与するため、界面活性剤、増粘剤、チクソ剤、レオロジーコントロール剤等を添加してもよい。成膜時の結着性や耐熱性を向上させるため、結着剤等を添加してもよい。成膜した際の応力を緩和する性能を有する成分を使用してもよい。
これら添加剤は置換基を有していてもよい。例えば、ドデシルベンゼンスルホン酸、ポリビニルアルコール、ポリ(N-ビニルアセトアミド)、ポリアクリルアミド、ポリアクリル酸などが挙げられる。添加剤は1種単独でまたは2種以上を組み合わせて用いることができる。
これらの酸化剤は、重合反応後に不純物として残留すると固体電解質層の導電率を低下させる。また、金属系酸化剤が残留すると、誘電体層を破損したり、漏れ電流が大きくなるという悪影響を及ぼす。そのためこれらの酸化剤を使用した場合には、反応後にこれらを除去する精製工程が必要となる。
本発明では触媒能を有するスルホ基を有する化合物(B)の存在下で重合を行うか、あるいは触媒能を有する置換基(スルホ基)を有する化合物(A)を重合させるため、酸化剤を用いた場合に必要な反応後の精製工程を省略することができる。
なお、本発明では、上記の酸化剤以外の不純物成分についてはコンデンサ特性に悪影響を及ぼさないものであればその使用が妨げられるものではない。
上記の方法における重合時の温度は特に限定はないが、10~300℃が好ましく、より好ましくは20~180℃であり、さらに好ましくは60~180℃である。重合時の温度が10~300℃であれば、反応速度、反応率、及び粘度が適切であり、副反応を抑制することができ、導電性高分子の製造を安定的かつ工業的に適した時間で行うことができ、さらに得られる導電性重合体の導電率も高くなる傾向がある。コンデンサ特性という観点では、漏れ電流を小さくする点から望ましい。重合時の加熱処理は、公知のホットプレート、ヒータ、クーラ、オーブン及び熱風乾燥器等を用いることができる。必要に応じ、上記範囲内で温度を変化させながら重合を行ってもよい。加熱処理を行う雰囲気は特に限定されないが大気下が好ましい。加熱処理時の圧力は特に限定されないが、大気圧下が好ましく、迅速に行うために減圧下で行ってもよい。また、溶媒を揮発させる場合は重合温度以下でもよく、減圧下や乾燥気流中で溶剤を揮発させ、その後重合温度に上げてもよい。
また、陽極体の種類に応じて、上記の誘電体被膜上に重合反応溶液を付着させる工程と固体電解質層の形成工程を各々2回以上繰り返してもよい。この場合、反応溶液を付着させるごとに加熱処理を行い、分散媒を一部または全部除去してもよく、または反応溶液を複数回連続して付着させ、最後に加熱処理を行って溶液を除去してもよい。
反応時間に特に制限はなく、化合物の化学構造や反応温度、反応圧力などによって異なるため一概には規定できないが、5秒~5時間が好ましく、より好ましくは30秒~2時間であり、さらに好ましくは1分~1時間である。この時間範囲内で加熱処理を行うことは溶剤を十分に揮発させる点、多孔性陽極体内での反応効率の点、副反応を抑制する点、漏れ電流を小さくする点で望ましい。
反応時のpHは1~7が好ましく、より好ましくは1~5であり、さらに好ましくは1~3である。pHが1以上であれば陽極体等への負荷が少なく、pHが7以下であれば反応率及び反応速度が適切である。
上記重合前の反応溶液の保管温度は特に限定はしないが、通常、-30~50℃であり、好ましくは-20~40℃であり、より好ましくは-10~30℃である。溶液の保管温度をこの範囲にすると、保管中に強酸の効果によって重合が進行する速度を和らげることができる。保管時の雰囲気は特に限定はなく、大気下でもよく、窒素、アルゴン等の不活性雰囲気でも良い。これらの中で、窒素、アルゴンが好ましい。
また、モノマー溶液とドーパント、触媒溶液を分け、重合時に混合して使用する場合の温度範囲はこの限りではなく、より広い温度範囲で安定的な保管が可能である。
本発明の固体電解質層の形成方法は、電解質に導電性高分子の固体電解質層と電解液を併用するハイブリッド電解コンデンサの製造にも用いることができる。
上記のように形成された固体電解質層の上には、陰極リードとの良好な電気的接触を得るために導電体層を形成することが好ましい。導電体層の例としては、カーボンペースト層、銀ペースト層、金属メッキ層、金属蒸着層、導電樹脂フィルムなどが挙げられる。
上記導電体層に陰極リードが電気的に接続され、陰極リードの一部がコンデンサの外装の外部に露出して陰極外部端子となる。一方、陽極体には、陽極リード線を介して陽極リードが電気的に接続され、陽極リードの一部がコンデンサの外装の外部に露出して陽極外部端子となる。陰極リード及び陽極リードの取り付けには通常のリードフレームを用いることができる。次いで、樹脂等による封止によって外装を形成してコンデンサを得ることができる。
本発明における固体電解コンデンサに用いる、誘電体被膜を表面に有する多孔性陽極体は、特開2011-77257号公報に開示の方法にならい製造した。すなわち、コンデンサ用ニオブ粉末を用い、陽極体表面に五酸化二ニオブを有する誘電体被膜が形成された多孔性陽極体を作製した。
この多孔性陽極体は、EIAJ規格RC2361A(2000年2月改正)に記載の方法に準拠した40%硫酸中での静電容量は37.9μFであった。
[重合反応溶液の調製]
ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド(Oxideと略記)2.5gをエタノール74.2gに溶解させ、p-トルエンスルホン酸一水和物(TSAと略記)1.56gを添加し、重合反応溶液(「Oxide/TSA 2/1」と略記。「2/1」はモル比を表す。以下同様)とした。
[固体電解質層の形成]
室温(25℃)の大気下で、上記方法で得られた多孔性陽極体を、重合反応溶液(Oxide/TSA 2/1)に10秒間浸漬した後、150℃の熱風乾燥器で乾燥した。この含浸操作を3回繰り返した。その後、リン酸(0.1質量%)水溶液中で温度80℃、電圧20Vの下、再化成を実施した。次いで陽極リード線に接触させないように固体電解質層が形成された陽極体にカーボンペーストを塗布して乾燥させ、さらに、陰極の接点をとるために銀ペーストを塗布して乾燥させた。
得られた固体電解コンデンサの120Hzでの静電容量(μF)をLCRメーター(アジレント・テクノロジー株式会社、4284A)を用いて測定した。測定結果を表1に示す。
ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド3.2gをエタノール74.5gに溶解させ、p-トルエンスルホン酸一水和物0.80gを添加し、重合反応溶液(「Oxide/TSA 5/1」と略記)とした。上記溶液の調製以外は実施例1と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
ジヒドロイソチアナフテン(DHITN)2.5gをエタノール77.4gに溶解させ、p-トルエンスルホン酸一水和物(TSA)1.75gを添加し、重合反応溶液(「DHITN/TSA 2/1」と略記)とした。上記溶液の調製以外は実施例1と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
ジヒドロイソチアナフテン(DHITN)3.2gをエタノール74.5gに溶解させ、p-トルエンスルホン酸一水和物(TSA)0.89gを添加し、重合反応溶液(「DHITN/TSA 5/1」と略記)とした。上記溶液の調製以外は実施例1と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
含浸操作の回数を10回にしたこと以外は実施例1と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
含浸操作の回数を10回にしたこと以外は実施例2と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
含浸操作の回数を10回にしたこと以外は比較例1と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
含浸操作の回数を10回にしたこと以外は比較例2と同様にしてコンデンサを作製し、静電容量を測定した。測定結果を表1に示す。
ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸ナトリウム塩35.9gをイオン交換水266gに添加、溶解後、陽イオン交換樹脂(H型)を詰めたカラムに通し、ナトリウムを水素にイオン交換し、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸水溶液とした。また、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド17.3gをイオン交換水133gに溶解させ、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド水溶液とした。
上記で調製したベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸(SH-Oxideと略記)水溶液を22g、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド水溶液を5g、エチレングリコール27gを混合して、重合反応溶液(「SH-Oxide/Oxide 7/3」と略記)とした。
[固体電解質層の形成]
25℃の大気下で、上記方法で得られた多孔性陽極体を、上記重合反応溶液(SH-Oxide/Oxide 7/3)に10秒間浸漬した後、120℃の熱風乾燥機で乾燥した。この含浸操作を10回繰り返した。その後、リン酸(0.1質量%)水溶液中で20℃、電圧20Vの下、再化成を実施した。次いで陽極リード線に接触させないように多孔性陽極体にカーボンペーストを塗布して乾燥させ、さらに、陰極の接点をとるために銀ペーストを塗布して乾燥させた。
得られた固体電解コンデンサの120Hzでの静電容量(μF)と100kHzでの等価直列抵抗〔ESR〕(Ω)を、前記LCRメーターを用いて測定した。測定結果を表2に示す。
ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸水溶液を19g、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド水溶液を10g、エチレングリコール29gを混合して重合反応溶液(「SH-Oxide/Oxide 5/5」と略記)を調製した。それ以外は実施例5と同様にしてコンデンサを作製し、電気特性(静電容量とESR)を測定した。測定結果を表2に示す。
ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド-5-スルホン酸水溶液を8.0g、ベンゾ[c]チオフェン-1,3-ジヒドロ-2-オキシド水溶液を10g、エチレングリコール18gを混合して重合反応溶液(「SH-Oxide/Oxide 3/7」と略記)を調製した。それ以外は実施例5と同様にコンデンサを作製し、電気特性を測定した。測定結果を表2に示す。
重合反応溶液を市販されているポリ(3、4-エチレンジオキシチオフェン)/ポリ(スチレンスルホン酸)分散液(PEDOT/PSS分散液)に変更した以外は実施例5と同様にしてコンデンサを作製し、電気特性を測定した。測定結果を表2に示す。
Claims (12)
- 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に下記一般式(1)
で示される化合物(A1)の少なくとも1種を、スルホ基を有する化合物(B)の存在下で、酸化剤を使用せずに重合させることにより前記導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 前記化合物(A1)が、式(1)中のkが0である化合物である請求項1に記載の固体電解コンデンサの製造方法。
- 一般式(1)中のR1、R2、R3、R4、R5及びR6が、それぞれ独立して、(1)水素原子、(2)炭素数1~20の直鎖状または分岐状のアルキル基、炭素数1~20の直鎖状または分岐状のアルコキシ基、または炭素数1~20の直鎖状または分岐状のアルキルエステル基、及び(3)ハロゲン原子から選択される1価の置換基である請求項1または2に記載の固体電解コンデンサの製造方法。
- 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に下記一般式(2)
で示される化合物(A2)の少なくとも1種を、酸化剤を使用せずに重合させて前記導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 前記化合物(A2)が、一般式(2)中のkが0である化合物である請求項4に記載の固体電解コンデンサの製造方法。
- 前記化合物(A2)が、一般式(2)中のR2、R3、R4、R5及びR6が、それぞれ独立して、(1)水素原子、(2)炭素数1~20の直鎖状または分岐状のアルキル基、炭素数1~20の直鎖状または分岐状のアルコキシ基、または炭素数1~20の直鎖状または分岐状のアルキルエステル基、及び(3)ハロゲン原子から選択される1価の置換基である化合物である請求項4または5に記載の固体電解コンデンサの製造方法。
- 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に、請求項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と、請求項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に請求項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と前記化合物(A1)と共重合し得る化合物(D)とを、スルホ基を有する化合物(B)の存在下で、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に請求項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種と前記化合物(A2)と共重合し得る化合物(D)とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 微細孔を有する弁金属を用意する工程、前記弁金属表面に誘電体被膜を形成する工程、前記誘電体被膜上に導電性高分子モノマーを含む重合反応液を付着させる工程、及び前記導電性高分子モノマーを重合させることにより前記誘電体被膜上に導電性高分子を含む固体電解質層を形成する工程を含む固体電解コンデンサの製造方法であって、
前記誘電体被膜上に請求項1に記載の一般式(1)で示される化合物(A1)の少なくとも1種と、請求項4に記載の一般式(2)で示される化合物(A2)の少なくとも1種と、前記化合物(A1)及び前記化合物(A2)と共重合し得る化合物(D)とを、酸化剤を使用せずに共重合させて導電性高分子を含む固体電解質層を形成することを特徴とする固体電解コンデンサの製造方法。 - 生成する水を除去しながら重合させて導電性高分子を含む固体電解質層を形成する請求項1~10のいずれかに記載の固体電解コンデンサの製造方法。
- 前記導電性高分子の重合において、水よりも蒸気圧の高い溶媒を使用する請求項1~10のいずれかに記載の固体電解コンデンサの製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05255486A (ja) * | 1992-03-13 | 1993-10-05 | Unitika Ltd | ベンゾ[cチオフェン構造を有する導電性高分子の合成方法 |
JP2000012394A (ja) * | 1997-11-28 | 2000-01-14 | Showa Denko Kk | 固体電解コンデンサ及びその製造方法 |
JP2002158144A (ja) | 2000-01-17 | 2002-05-31 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサの製造方法および固体電解コンデンサ |
JP2003100561A (ja) | 2001-07-16 | 2003-04-04 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサの製造方法 |
US6614063B2 (en) | 1999-12-03 | 2003-09-02 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor |
JP2005109252A (ja) | 2003-09-30 | 2005-04-21 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
JP2010195980A (ja) * | 2009-02-26 | 2010-09-09 | Waseda Univ | ポリチオフェン又はチオフェン共重合体の溶液又は分散液並びにその製造方法 |
JP2011077257A (ja) | 2009-09-30 | 2011-04-14 | Showa Denko Kk | 固体電解コンデンサの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3541429B2 (ja) | 1993-05-31 | 2004-07-14 | 昭和電工株式会社 | スルホン酸基を有する縮合ヘテロ環式化合物及びその製造方法 |
US6351370B1 (en) * | 1998-03-19 | 2002-02-26 | Showa Denko K.K. | Solid electrolytic capacitor and method for producing the same |
US6466421B1 (en) | 1998-05-21 | 2002-10-15 | Showa Denko K.K. | Solid electrolytic capacitor and method for producing the same |
JP2001006983A (ja) | 1999-06-22 | 2001-01-12 | Showa Denko Kk | 固体電解コンデンサ及びその製造方法 |
JP5952551B2 (ja) | 2011-12-12 | 2016-07-13 | Necトーキン株式会社 | 導電性高分子組成物およびその製造方法、導電性高分子材料の製造方法、導電性基材の製造方法、電極の製造方法、電子デバイスの製造方法並びに固体電解コンデンサの製造方法 |
JP6142280B2 (ja) * | 2012-08-31 | 2017-06-07 | パナソニックIpマネジメント株式会社 | 固体電解コンデンサおよびその製造方法 |
-
2017
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05255486A (ja) * | 1992-03-13 | 1993-10-05 | Unitika Ltd | ベンゾ[cチオフェン構造を有する導電性高分子の合成方法 |
JP2000012394A (ja) * | 1997-11-28 | 2000-01-14 | Showa Denko Kk | 固体電解コンデンサ及びその製造方法 |
US6614063B2 (en) | 1999-12-03 | 2003-09-02 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor |
JP2002158144A (ja) | 2000-01-17 | 2002-05-31 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサの製造方法および固体電解コンデンサ |
JP2003100561A (ja) | 2001-07-16 | 2003-04-04 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサの製造方法 |
JP2005109252A (ja) | 2003-09-30 | 2005-04-21 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
JP2010195980A (ja) * | 2009-02-26 | 2010-09-09 | Waseda Univ | ポリチオフェン又はチオフェン共重合体の溶液又は分散液並びにその製造方法 |
JP2011077257A (ja) | 2009-09-30 | 2011-04-14 | Showa Denko Kk | 固体電解コンデンサの製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3564976A4 |
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