WO2017073233A1 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- WO2017073233A1 WO2017073233A1 PCT/JP2016/078832 JP2016078832W WO2017073233A1 WO 2017073233 A1 WO2017073233 A1 WO 2017073233A1 JP 2016078832 W JP2016078832 W JP 2016078832W WO 2017073233 A1 WO2017073233 A1 WO 2017073233A1
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- power semiconductor
- external wiring
- semiconductor device
- layer
- semiconductor element
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Definitions
- the present invention relates to a power semiconductor device.
- the power semiconductor device includes a semiconductor element typified by Si (linear expansion coefficient: 2.5 ppm / K), Cu (linear expansion coefficient: 16.8 ppm / K), Al (linear expansion coefficient: 23.0 ppm / K). ) And the like, and the reliability of connection between the electrodes on the upper and lower surfaces of the semiconductor element and the external wiring determines the product life of the power semiconductor element.
- connection at the lower surface electrode of the semiconductor element solder bonding or the like is used, but the reliability improvement due to material improvement is reaching its limit, for example, bonding with CuSn compound, bonding with AgSintering higher in strength than solder, Application of bonding by Cu sintering or the like is being studied.
- the connection at the upper electrode of the semiconductor element has conventionally secured the necessary current capacity and connection reliability by using an Al wire bond junction.
- the current density per unit volume of the connection portion increases due to the miniaturization of the semiconductor element, and as a result, the connection reliability may be lowered.
- a power semiconductor device for example, as described in Patent Document 1, a plurality of IGBTs (insulated gate bipolar transistors) used as switching devices for power conversion and anti-parallel connected freewheel diodes ( FWD) is set as one set, and a plurality of sets are arranged and wired on the insulating circuit board so as to have a semiconductor element configuration of an inverter circuit, for example.
- the lower surface electrode of the IGBT and the lower ends of the plurality of external terminals are respectively solder-bonded to the insulated circuit board fixed on the metal substrate.
- an Al wire is wired on the upper surface electrode of the IGBT by wire bonding, and the Al wire is further electrically connected to an external terminal.
- a frame-shaped resin case is fixed to the outer periphery of the metal substrate so as to surround the entire insulated circuit board on the metal substrate.
- a power semiconductor device is formed by filling an inner space of the resin case, which is constituted by the resin case and the metal substrate, with an insulating sealing resin material.
- the present invention has been made to solve the above-described problems, and provides a power semiconductor device capable of improving the connection reliability between electrodes and wirings of a power semiconductor element as compared with the conventional one.
- the purpose is to do.
- a power semiconductor device includes an insulating substrate having a first conductor layer and a second conductor layer on opposite surfaces in the thickness direction of the insulating layer, and the first conductor layer via the first fixing layer.
- the semiconductor element is located between the external wiring and the first conductor layer and extends along the first conductor layer.
- An external wiring having an element connecting portion joined to each semiconductor element via the second fixing layer in an existing state, an external connection end portion obtained by bending one end of the element connecting portion in the thickness direction, and the first wiring
- a frame member joined to the first conductor layer via a third fixing layer around a plurality of semiconductor elements on the conductor layer, and the frame member is fitted to the end portion for external connection.
- the external wiring protrudes toward the semiconductor element side. That has at least two projections, characterized in that.
- the frame member is provided with the fitting portion, and the external wiring is provided with the protruding portion.
- the external connection end portion of the external wiring extends in the thickness direction and is taken out from the upper surface of the power semiconductor device, thereby reducing the size of the power semiconductor device.
- the frame member is provided with a fitting portion to which the end for external connection is fitted, and further provided with at least two protrusions on the external wiring, so that the positioning of the external wiring is strictly performed without using a jig. It becomes possible to stipulate. As a result, the minimum thickness and the maximum thickness of the second fixing layer can be strictly defined, and the reliability of the joint portion of the external wiring can be stabilized as compared with the conventional case.
- FIG. 1 is a perspective view of a power semiconductor device according to a first embodiment. It is sectional drawing of the power semiconductor device shown in FIG. 6 is a perspective view of a power semiconductor device according to a second embodiment.
- FIG. FIG. 4 is a cross-sectional view of the power semiconductor device shown in FIG. 3.
- FIG. 6 is a cross-sectional view of a power semiconductor device in a third embodiment.
- FIG. 10 is a cross-sectional view of a power semiconductor device in a fourth embodiment. It is sectional drawing in the modification of the power semiconductor device shown in FIG.
- FIG. 1 is a perspective view of a power semiconductor device 101 of the present embodiment, and FIG. 2 is a cross-sectional view thereof.
- the power semiconductor device 101 includes a plurality of semiconductor elements 5, external wiring 7, a frame member 8, and an insulating substrate 10 as basic components. These components will be sequentially described below.
- the insulating substrate 10 includes a first conductor layer 1, an insulating layer 2, and a second conductor layer 3, and the first conductor layer 1 is disposed on the opposing surface in the thickness direction 11 of the insulating layer 2. And the 2nd conductor layer 3 is formed.
- the material of the insulating layer 2 is preferably a ceramic material having insulating properties and high thermal conductivity such as AlN, Si 3 N 4 , Al 2 O 3 or the like.
- An epoxy resin insulating layer containing BN filler or the like can also be used.
- the thickness of the insulating layer 2 is about 0.3 mm to 1 mm.
- the first conductor layer 1 and the second conductor layer 3 can be composed of, for example, Cu or Al, or a laminated layer of Cu and Al.
- the thicknesses of the first conductor layer 1 and the second conductor layer 3 are about 0.2 mm to 1 mm, respectively. Since the power semiconductor element 5 is joined to the first conductor layer 1, the thicker the first conductor layer 1, the higher the heat dissipation from the power semiconductor element 5. On the other hand, as the first conductor layer 1 and the second conductor layer 3 are thicker, the thermal stress on the insulating layer 2 is increased. Therefore, it is necessary to secure a large margin for preventing damage to the insulating layer 2. About 3 to 0.6 mm is used.
- a plurality of semiconductor elements 5 are joined to the first conductor layer 1.
- the power semiconductor element 5 in this embodiment, an IGBT and a diode are used as a set, as will be described later.
- Si is usually used, but a material capable of high temperature operation such as GaN or SiC may be used. The use of such a material capable of high temperature operation is preferable because the power semiconductor device 101 as a whole can be downsized.
- the semiconductor element 5 has an electrode on each of two opposing surfaces in the thickness direction, and the electrode on one surface, for example, the lower surface, is joined to the first conductor layer 1 by the first fixing layer 4.
- the first fixing layer 4 for example, a metal-based substance that has electrical conductivity and can be mechanically fixed, such as solder, an Ag conductor, and a Cu conductor, is used. At this time, by using a material having a high melting point such as an Ag layer, the reliability of the first fixed layer 4 when the operating temperature of the power semiconductor element 5 rises can be improved.
- the external wiring 7 has an element connecting portion 7a and an external connection end portion 7d as basic components, and these are integrally formed.
- the element connection portion 7 a is a portion shared by the respective semiconductor elements 5, and extends along the first conductor layer 1 in a state where the semiconductor element 5 is located between the external wiring 7 and the first conductor layer 1. It is a portion that is joined to each electrode on the other surface, for example, the upper surface, of each semiconductor element 5 by the second fixing layer 6.
- the external connection end portion 7d is a portion that is bent in the thickness direction 11 from the element coupling portion 7a, and is a portion that is electrically connected to an external device.
- Such an external wiring 7 has a function of diffusing heat generated in the power semiconductor element 5 to a connecting portion with an external device or a surrounding sealing material (not shown), and also needs to have high thermal conductivity. Therefore, it is effective to use Cu, for example.
- the thickness of the external wiring 7 is, for example, about 0.2 mm to 1 mm. The greater the thickness, the greater the thermal stress applied to the power semiconductor element 5, so there is a limitation, and if it is too thin, heat generation due to ohmic resistance during energization increases, so an appropriate thickness selection is necessary.
- the external wiring 7 has at least two protrusions 7b that protrude toward the semiconductor element 5 in the element connecting portion 7a. This point will be described later.
- an electrically conductive material such as solder or Ag, Cu, or a conductive material such as a CuSn alloy is suitable.
- the 2nd pinned layer 6 is arrange
- the frame member 8 surrounds all the semiconductor elements 5 and defines the outer shape on the insulating substrate 10.
- the frame member 8 is a frame-like member provided on the entire periphery of the peripheral portion of the first conductor layer 1. Bonded to the first conductor layer 1 through the three fixed layers 9. As shown in the figure, the tips of the electrodes of the power semiconductor device 101 protrude from the outer surface of the frame member 8 and can be electrically connected to an external device.
- a resin material that can be injection-molded and has high heat resistance is used.
- PPS polyphenylene sulfide
- liquid crystal resin fluorine-based resin, or the like is preferable.
- a sealing material is injected into the inside of the frame member 8 where the semiconductor element 5 and the external wiring 7 are disposed, and sealing is performed.
- sealing insulation between the collector and the emitter in the semiconductor element 5 and between the collector and the heat sink around the creeping surface of the insulating substrate 10 is secured.
- the power semiconductor device 101 of the present embodiment configured as described above relates to an inverter that drives a motor or the like.
- an energization current of several hundred amperes normally flows through the power semiconductor device 101. Therefore, the external wiring 7 is set within the allowable member temperature and the allowable atmosphere temperature according to the energization current.
- thermal stress is generated at the junction inside the power semiconductor device due to temperature changes of the semiconductor elements, etc. due to increase / decrease in the load of the motor, and repeated temperature changes
- the joint may deteriorate due to the above. That is, there is a lifetime for long-term use. Therefore, it is necessary to design a lifetime in order to guarantee a period during which it can be used safely.
- the external wiring 7 expands and contracts due to a temperature rise during energization.
- the external wiring 7 is fixed to the upper surface electrode of the power semiconductor element 5, if the external wiring 7 is greatly deformed, stress is applied to the power semiconductor element 5, and the upper surface electrode of the power semiconductor element 5 is deformed. A malfunction is expected.
- the thermal stress applied to the second fixing layer 6 causes the second fixing layer 6 to crack.
- the cross-sectional area of the joint portion due to the second fixing layer 6 is reduced, the self-heating of the joint portion is increased, and the repeated thermal stress is increased.
- the crack progresses at the joint and the power semiconductor element 5 and the external wiring 7 are in a state of being broken, a high potential difference is generated between the upper electrode of the power semiconductor element 5 and the external wiring 7, and arc discharge is caused.
- the semiconductor device for electromotive power will break down. Therefore, it is necessary to provide a sufficient margin for the crack growth rate of the second pinned layer 6.
- the power semiconductor element 5 includes, for example, a set of an IGBT and a diode, and is disposed adjacent to each other from the viewpoint of wiring inductance. In the present embodiment, this method is adopted as described above. On the other hand, such a configuration has the following problems.
- one external wiring 7 is arranged for a plurality of semiconductor elements 5 as described above.
- a configuration is provided in which a joint surface of the external wiring is provided so as to be simultaneously joined to a plurality of power semiconductor elements, and one end of the external wiring is raised upward along the thickness direction of the insulating substrate in order to reduce the size of the module.
- the center of gravity of the external wiring is offset from the center of gravity between the plurality of power semiconductor elements.
- the posture of the external wiring becomes unstable, and when joining with the second fixing layer, the thickness of the second fixing layer arranged with respect to one semiconductor element and the arrangement with respect to another semiconductor element are arranged.
- the variation with the thickness of the second fixing layer is very large. In the worst case, there is a concern that the external wiring falls.
- Such thickness variations in the respective second fixing layers cause the following problems. That is, when the thickness of the second fixing layer is very large, the thermal stress acting on the second fixing layer is reduced, while the thermal stress acting on the upper surface electrode of the power semiconductor element is increased. As a result, the crack growth of the upper surface electrode is accelerated. On the other hand, when the thickness of the second fixing layer is very small, the thermal stress acting on the second fixing layer becomes very large, and the crack growth of the second fixing layer becomes very fast. As can be understood from the above description, the minimum thickness and the maximum thickness of the second fixing layer must be strictly defined in order to obtain the reliability of the junction between the electrode of the semiconductor element and the external wiring.
- the frame member 8 is provided with a fitting portion 8b and the external wiring 7 is provided with a protruding portion 7b in order to strictly define the minimum thickness and the maximum thickness of the second fixing layer 6. That is, the fitting portion 8b is a component for preventing the external wiring 7 from falling, and is fitted to the external connection end portion 7d of the external wiring 7 to restrict the positional deviation of the external wiring 7.
- the fitting between the fitting portion 8b and the external wiring 7 may be made in contact with the entire contact surface of the external wiring 7 in the fitting portion 8b, or may be in contact with a part of the contact surface. Well, both can achieve the same effect.
- the protruding portion 7 b of the external wiring 7 is a portion protruding from the contact surface 7 e with the second fixing layer 6 to the semiconductor element 5 side in the element connecting portion 7 a, and the second fixing on the power semiconductor element 5. At least one place is provided with respect to the layer 6.
- the protrusions 7 b are provided at two places on each power semiconductor element 5.
- the positional relationship between the protrusion 7b and the second fixing layer 6 is that the protrusion 7b can be included in the second fixing layer 6 so that the effect of thickness regulation can be exerted.
- the shape of the protrusion 7b is preferably a cylindrical shape or an elliptical cylinder shape. .
- the minimum thickness and the maximum thickness of the second fixing layer 6 are strictly defined without using a jig. It becomes possible. As a result, the reliability of the junction between the electrode of each semiconductor element 5 and the external wiring 7 can be improved as compared with the related art. Further, the external connection end portion 7 d of the external wiring 7 extends along the thickness direction 11 of the insulating substrate 10 and is taken out from the surface (upper surface) of the power semiconductor device 101. Miniaturization is realized, and furthermore, since the external wiring 7 is installed for the plurality of semiconductor elements 5, productivity and cost benefits can be secured at the same time.
- the curvature of the bent portion 7f (FIG. 2) from the element coupling portion 7a to the external connection end portion 7d in the external wiring 7 is set to be large so that expansion / contraction or vibration in the external wiring 7 is eliminated (stress relief). Can be secured greatly. Further, for example, an S-shaped or bolt-shaped vent may be provided at the external connection end 7d to ensure stress relief.
- FIG. The power semiconductor device 102 according to the second embodiment shown in FIG. 3 has a configuration having an external wiring 7-2 in which the external wiring 7 in the first embodiment is further modified. Since the power semiconductor device 102 has the same configuration as that of the first embodiment except for the configuration of the external wiring 7-2, the following description will mainly focus on the external wiring 7-2.
- FIG. 4 is a cross-sectional view of the power semiconductor device 102 according to the second embodiment.
- the second fixing layer 6 shown in FIGS. 3 and 4 is provided by supplying cream solder by printing or dispensing, or by mounting a plate-like solder. As a problem that occurs when solder is provided in this manner, solder balls are scattered. This will be described in detail below.
- solder balls are scattered in the case of cream solder.
- solder balls are scattered when the solder melting point is exceeded during the dry reduction process.
- solder ball scattering can be suppressed by reducing the amount of solder to be supplied.
- the amount of solder to be supplied is insufficient, or when the positional relationship between the semiconductor element and the external wiring is not fixed, an area where the solder is not sufficiently wet occurs and the peeling progress due to stress concentration occurs. It will increase.
- an excessive amount of solder is supplied in order to prevent this wetting failure, the above-described scattering of the solder balls increases, and many conductive foreign matters are generated.
- the power semiconductor device described in the first embodiment is also used in the power semiconductor device 102 in the second embodiment so that an appropriate amount of solder can be supplied for the second fixing layer 6.
- the frame member 8 is provided with a fitting portion 8b
- the external wiring 7-2 is provided with a protruding portion 7b and a concave portion 7c.
- the recess 7c is provided on the contact surface 7e with the second fixed layer 6 in the element connecting portion 7a. Further, the recess 7c may penetrate the external wiring 7-2 as shown in FIGS. 3 and 4, or may not penetrate as shown in FIG.
- the shape of the recessed part 7c is not limited to the circular shape shown in figure, Arbitrary shapes can be employ
- the concave portion 7c on the contact surface 7e the escape location of the solder supplied to form the second fixing layer 6 is provided, and the amount of solder exceeding an appropriate amount is supplied.
- an excessive amount can be accommodated in the recess 7c. Therefore, the recess 7c can absorb, in other words, adjust the variation in the solder supply amount.
- the thickness of the second fixing layer 6 can be strictly defined.
- the reliability of the junction between the electrode of each semiconductor element 5 and the external wiring 7 can be further improved as compared with the conventional case. Needless to say, defects caused by conductive foreign substances can also be suppressed.
- FIG. A power semiconductor device 103 according to the third embodiment shown in FIG. 5 has a configuration having a frame member 8-2 in which the frame member 8 in the first or second embodiment described above is further modified. Since the power semiconductor device 103 has the same configuration as that of the first or second embodiment except for the configuration of the frame member 8-2, the frame member 8-2 will be mainly described below.
- the frame member 8-2 further includes a convex portion 8c in addition to the fitting portion 8b on the contact surface 8e with the third fixing layer 9.
- the convex portion 8c is a component that protrudes from the contact surface 8e to the first conductor layer 1 side.
- the contact surface 8 e is a surface where the frame member 8-2 contacts the third fixing layer 9 that fixes the frame member 8-2 to the first conductor layer 1.
- the convex portion 8 c by providing the convex portion 8 c, the thickness of the third fixing layer 9 can be defined, and the arrangement of the frame member 8-2 with respect to the first conductor layer 1 can be appropriately performed. Therefore, an error in the positional relationship between the fitting portion 8b provided on the frame member 8-2 and the external wiring 7 can be minimized. As described above, the convex portion 8 c contributes to stable positioning of the external wiring 7, and as a result, it is possible to define the thickness of the second fixing layer 6.
- the convex part 8c is provided in at least three places with respect to the contact surface 8e, it is possible to have a minimum necessary thickness defining function.
- the convex portion 8c may be provided continuously on the contact surface 8e of the frame member 8-2, or may be provided discontinuously on the contact surface 8e. May be.
- Embodiment 4 FIG.
- the power semiconductor device 104 according to the fourth embodiment will be described with reference to FIG.
- the power semiconductor device 104 also has the frame member 8-2 described in the third embodiment. 6 shows a configuration in which the frame member 8 is replaced with the frame member 8-2 in the configuration having the power semiconductor device 102 of the second embodiment, that is, the external wiring 7-2.
- the frame member 8 can be replaced with the frame member 8-2.
- the frame member 8-2 has a protrusion 8c protruding from the contact surface 8e toward the first conductor layer 1, and the frame member 8-2 and the first conductor By strictly determining the distance to the layer 1 and defining the thickness of the third fixing layer 9, errors in the positional relationship between the external wiring 7-2 and the fitting portion 8b of the frame member 8-2 are minimized. It has a structure. Here, it is preferable to use a silicone-based adhesive for the third fixing layer 9 from the viewpoint of work.
- the third fixed layer 9 flows down from the upper surface of the first conductor layer 1 and reaches the interface with the insulating layer 2, voids such as air are enclosed in the third fixed layer 9 and electric field distribution. May deteriorate. As a result, the creeping discharge distance of the insulating layer 2, that is, the creeping discharge distance from the first conductor layer 1 to the second conductor layer 3 may be insufficient.
- the recess 8d is provided in the contact surface 8e with the third fixing layer 9 in the frame member 8-2.
- the recess 8d can absorb, in other words, adjust the variation in the amount of the third fixed layer 9.
- the third fixed layer 9 can be optimized even when the shape of the frame member 8 has a warp or the like as a whole and when the shape of the first conductor layer 1 also has a warp or the like. It becomes possible. Therefore, the productivity of the power semiconductor device 104 can be dramatically improved.
- Embodiment 5 The power semiconductor device in the fifth embodiment is a power semiconductor device in which the external wiring 7 or the external wiring 7-2 in the first to fourth embodiments described above is devised. Therefore, in the following, the external wiring 7 or the external wiring 7-2 will be mainly described.
- drive motors for automobiles are diversified, such as those for hybrid systems with one or two motors and an engine, or those for electric cars with only motors, and are required for inverters that drive these motors.
- the reliability specifications available are diversified according to each system. In accordance with the problem of miniaturization, an inexpensive and high-quality inverter is required according to various reliability specifications.
- the external wiring 7 and the external wiring 7-2 are only applied with Cu as a material thereof. In other words, it is effective to bring the coefficient of linear expansion of the external wiring 7 and the external wiring 7-2 close to a semiconductor element (for example, 2.5 ppm / K for silicon).
- the external wiring 7 and the external wiring 7-2 are, for example, a clad material laminated on three layers of Cu, Invar (that is, Fe-36% Ni alloy) and Cu, the electrode surface can be adjusted by adjusting the thickness ratio thereof. It is possible to control the apparent linear expansion coefficient.
- the linear expansion coefficients of the external wiring 7 and the external wiring 7-2 can be arbitrarily changed between silicon (2.5 ppm / K) and Cu (17 ppm / K).
- the linear expansion coefficients of the external wiring 7 and the external wiring 7-2 can be set smaller than the linear expansion coefficient in the Cu alloy and larger than the linear expansion coefficient in the semiconductor element.
- the strain amount of the second pinned layer 6 is remarkably reduced by reducing the difference in linear expansion coefficient between the external wiring 7 and the external wiring 7-2 and the power semiconductor element 5, and as a result, It is possible to improve the joint reliability of the external wiring 7 and the external wiring 7-2.
- the applicant has confirmed that the lifetime improvement effect is 10 times or more compared to the case of the Cu alloy electrode.
- Cu—Mo alloy, Cu—W alloy and the like can improve the connection reliability without extremely reducing the thermal conductivity.
- connection reliability of the external wiring 7 and the external wiring 7-2 can be remarkably improved only by changing the material itself and the shape. Therefore, it is possible to deal with various inverters with different usage environments or operation modes only by changing the material and shape of the external wiring 7 and the external wiring 7-2. Therefore, the manufacturing process of the power semiconductor device can be made common. Can be achieved and a reduction in manufacturing cost can be achieved. Therefore, it is possible to realize an inverter that is small, highly earthquake resistant, and low in cost.
- SYMBOLS 1 1st conductor layer, 2 insulating layer, 2nd conductor layer, 4th 1st adhering layer, 5 semiconductor element, 6 second fixing layer, 7 external wiring, 7a element connecting portion, 7b protruding portion, 7c recessed portion, 7d end for external connection, 7e contact surface, 7-2 external wiring, 8 frame member, 8b fitting part, 8c convex part, 8d concave part, 8e contact surface, 8-2 Frame member, 9 third fixing layer, 10 insulating substrate, 101-104 Power semiconductor devices.
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Abstract
Description
一方、半導体素子の上面電極における接続は、従来、Alワイヤボンド接合を用いることで必要な電流容量及び接続信頼性を確保してきた。しかしながら、半導体素子の小型化により、接続部の単位体積当たりの電流密度が増大し、その結果、接続信頼性の低下を招く恐れが懸念されている。
電力用半導体装置(パワー半導体モジュール)では、例えば上記特許文献1に記載するように、電力変換用途のスイッチングデバイスとして用いられる複数のIGBT(絶縁ゲートバイポーラトランジスタ)と、逆並列接続のフリーホイールダイオード(FWD)とを1セットとし、その複数セットが、例えばインバータ回路の半導体素子構成になるように、絶縁回路基板上に配置、配線されている。
ここでは金属基板上に固着された絶縁回路基板上に、IGBTの下面電極及び複数の外部端子の下端がそれぞれはんだ接合される。さらにIGBTの上面電極には、ワイヤボンディングによってAl線の配線が行なわれ、このAl線は、さらに外部端子に電気的に接続されている。
また、金属基板上の絶縁回路基板全体を取り囲むように金属基板の外周には、枠状の樹脂ケースが固着される。この樹脂ケースと金属基板上とで構成される、樹脂ケースの内側空間には、絶縁性の封止樹脂材が充填されて電力用半導体装置が形成される。
即ち、本発明の一態様における電力用半導体装置は、絶縁層における厚み方向の対向面に第1導体層及び第2導体層を有する絶縁基板と、上記第1導体層に第1固着層を介して接合した複数の半導体素子と、それぞれの上記半導体素子で共用する外部配線であり、当該外部配線と上記第1導体層との間に上記半導体素子が位置し上記第1導体層に沿って延在した状態で第2固着層を介して各半導体素子に接合する素子連結部、及びこの素子連結部の一端を上記厚み方向へ折り曲げた外部接続用端部を有する、外部配線と、上記第1導体層上の複数の半導体素子の周囲に第3固着層を介して上記第1導体層に接合された枠部材と、を備え、上記枠部材は、上記外部接続用端部と嵌合する嵌合部を有し、上記外部配線は、上記半導体素子側へ突出する、少なくとも2つの突起部を有する、ことを特徴とする。
図1は、本実施の形態の電力用半導体装置101の斜視図であり、図2はその断面図である。電力用半導体装置101は、基本的構成部分として、複数の半導体素子5と、外部配線7と、枠部材8と、絶縁基板10とを備える。これらの構成部分について、以下に順次説明を行う。
半導体素子5は、その厚み方向における2つの対向面のそれぞれに電極を有し、一方面、例えば下面、の電極が第1固着層4によって第1導体層1に接合される。第1固着層4としては、例えば、はんだ、Ag導体、Cu導体などの導電性を有し機械的な固着が可能な金属系の物質が用いられる。このときAgの層など高融点の材料を用いることで、電力用半導体素子5における動作温度が上昇したときの第1固着層4の信頼性を高めることができる。
また外部配線7の厚みは、例えば0.2mm~1mm程度が用いられる。厚みが大きいほど電力用半導体素子5への熱応力が大きくなることから自ずと制限があり、また薄すぎると通電時におけるオーム抵抗による発熱が大きくなるため、適切な厚み選択が必要である。
また外部配線7は、素子連結部7aにおいて、半導体素子5側へ突出する少なくとも2つの突起部7bを有する。この点については後述する。
枠部材8の材料としては、射出成型可能で耐熱性の高い樹脂材料が用いられる。例えばPPS(ポリフェニレンサルファイド)あるいは液晶樹脂、フッ素系樹脂などが好適である。尚、半導体素子5及び外部配線7等が配置されている、枠部材8の内側には封止材が注入され封止が行われる。該封止により、半導体素子5におけるコレクタ~エミッタ間、絶縁基板10の沿面周辺のコレクタ~ヒートシンク間の絶縁性が確保される。
一方、従来の電力用半導体装置からもそうであるように、モーターの負荷の増減による半導体素子等の温度変化により、電力用半導体装置内部の接合部には熱応力が発生し、繰り返される温度変化によって接合部が劣化することが懸念される。即ち、長期使用に対して寿命が存在する。よって安全に使用できる期間を保証するために寿命設計を行う必要がある。
即ち、外部配線の重心が複数の電力用半導体素子間における重心からオフセットしてしまう。その結果、外部配線の姿勢が不安定になり第2固着層で接合する際に、ある半導体素子に対して配置されている第2固着層の厚みと、別の半導体素子に対して配置されている第2固着層の厚みとのバラツキが非常に大きくなる。最悪の場合には、外部配線が転倒してしまう懸念もある。
このような各第2固着層における厚みのバラツキは、以下の問題を招く。即ち、第2固着層の厚みが非常に大きい場合、第2固着層に作用する熱応力は小さくなるが、一方、電力用半導体素子の上面電極に作用する熱応力は大きくなってしまう。その結果、上面電極の亀裂進展が早くなる。一方、第2固着層の厚みが非常に小さい場合には、第2固着層に作用する熱応力が非常に大きくなり、第2固着層の亀裂進展が非常に早くなる。
以上の説明から判るように、半導体素子の電極と外部配線との接合部信頼性を得るには、第2固着層の最小厚み及び最大厚みを厳密に規定しなければならない。
即ち、嵌合部8bは、外部配線7の転倒防止を図るための構成部分であり、外部配線7の外部接続用端部7dと嵌合して外部配線7の位置ずれを規制する。ここで嵌合部8bと外部配線7との嵌合は、嵌合部8bにおいて外部配線7の接触面の全面で接触してもよいし、上記接触面の一部で接触している状態でもよく、共に同様の効果を発揮出来る。
また、外部配線7の外部接続用端部7dは、絶縁基板10の厚み方向11に沿って延在し当該電力用半導体装置101の表面(上面)から取り出されることから、電力用半導体装置101の小型化を実現し、さらに、外部配線7は、複数の半導体素子5に対して設置されることから、生産性及びコスト面での有益性も同時に確保することができる。
図3に示す本実施の形態2の電力用半導体装置102は、上述した実施の形態1における外部配線7にさらに工夫を加えた外部配線7-2を有する構成を備える。電力用半導体装置102は、外部配線7-2の構成以外、実施の形態1と同じ構成を備えることから、以下では主に外部配線7-2について説明を行う。尚、図4は本実施の形態2における電力用半導体装置102の断面図である。
この凹部7cは、素子連結部7aにおける第2固着層6との接触面7eに設けられる。また凹部7cは、図3及び図4に示すように外部配線7-2を貫通したものでもよいし、図7に示すように非貫通のものでもよい。また凹部7cの形状は、図示する円形に限定されず、任意の形状を採用することができる。例えば溝状であってもよい。
図5に示す本実施の形態3の電力用半導体装置103は、上述した実施の形態1又は2における枠部材8にさらに工夫を加えた枠部材8-2を有した構成を備える。電力用半導体装置103は、枠部材8-2の構成以外、実施の形態1又は2と同じ構成を備えることから、以下では主に枠部材8-2について説明を行う。
既に説明した外部配線7における突起部7b、並びに、枠部材8-2において嵌合部8b及び凸部8cを設けたことで、第2固着層6の最小厚み及び最大厚みを、ジグの使用無しに厳密に規定することが可能になる。その結果、各半導体素子5の電極と外部配線7との接合部信頼性を従来に比べて向上させることができる。
図6を参照して本実施の形態4の電力用半導体装置104について説明する。この電力用半導体装置104も実施の形態3で説明した枠部材8-2を有する。尚、図6は、実施の形態2の電力用半導体装置102つまり外部配線7-2を有する構成において、枠部材8を枠部材8-2に換えた構成を示しているが、実施の形態1の電力用半導体装置101において、枠部材8を枠部材8-2に換えた構成を採ることもできる。
また、枠部材8の形状において全体で反り等の歪みがある場合、及び、第1導体層1の形状においても反り等の歪みがある場合でも、第3固着層9量を適正化することが可能となる。よって、電力用半導体装置104の生産性を飛躍的に向上させることが可能となる。
本実施の形態5における電力用半導体装置は、上述した実施の形態1から4における外部配線7あるいは外部配線7-2に関して工夫を施した電力用半導体装置である。よって以下では、主に外部配線7あるいは外部配線7-2に関して説明を行う。
例えば自動車用の駆動モーターは、モーター1台あるいは2台とエンジンとのハイブリッドシステム用のもの、又は、モーターのみの電気自動車用のもの等、多種多様化しており、このモーターを駆動するインバータに求められる信頼性スペックもそれぞれのシステムに応じて多種多様化している。そして、小型化という課題に合わせて、様々な信頼性スペックに応じて安価で高品質なインバータが求められている。
又、2015年10月28日に出願された、日本国特許出願No.特願2015-211583号の明細書、図面、特許請求の範囲、及び要約書の開示内容の全ては、参考として本明細書中に編入されるものである。
6 第2固着層、7 外部配線、7a 素子連結部、7b 突起部、7c 凹部、
7d 外部接続用端部、7e 接触面、7-2 外部配線、
8 枠部材、8b 嵌合部、8c 凸部、8d 凹部、8e 接触面、
8-2 枠部材、9 第3固着層、10 絶縁基板、
101~104 電力用半導体装置。
Claims (5)
- 絶縁層における厚み方向の対向面に第1導体層及び第2導体層を有する絶縁基板と、
上記第1導体層に第1固着層を介して接合した複数の半導体素子と、
それぞれの上記半導体素子で共用する外部配線であり、当該外部配線と上記第1導体層との間に上記半導体素子が位置し上記第1導体層に沿って延在した状態で第2固着層を介して各半導体素子に接合する素子連結部、及びこの素子連結部の一端を上記厚み方向へ折り曲げた外部接続用端部を有する、外部配線と、
上記第1導体層上の複数の半導体素子の周囲に第3固着層を介して上記第1導体層に接合された枠部材と、を備え、
上記枠部材は、上記外部接続用端部と嵌合する嵌合部を有し、
上記外部配線は、上記半導体素子側へ突出する、少なくとも2つの突起部を有する、
ことを特徴とする電力用半導体装置。 - 上記素子連結部は、上記第2固着層との接触面に凹部を有する、請求項1に記載の電力用半導体装置。
- 上記枠部材は、上記第3固着層との接触面に上記第1導体層側へ突出する凸部をさらに有する、請求項1又は2に記載の電力用半導体装置。
- 上記枠部材は、上記第3固着層との接触面に凹部をさらに有する、請求項1から3のいずれか1項に記載の電力用半導体装置。
- 上記外部配線は、Cu合金における線膨張係数よりも小さく半導体素子における線膨張係数よりも大きい線膨張係数を有する、請求項1から4のいずれか1項に記載の電力用半導体装置。
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