WO2017037970A1 - 金属板からレジスト膜を除去する方法およびエッチングされた金属板の製造方法 - Google Patents
金属板からレジスト膜を除去する方法およびエッチングされた金属板の製造方法 Download PDFInfo
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- WO2017037970A1 WO2017037970A1 PCT/JP2016/002856 JP2016002856W WO2017037970A1 WO 2017037970 A1 WO2017037970 A1 WO 2017037970A1 JP 2016002856 W JP2016002856 W JP 2016002856W WO 2017037970 A1 WO2017037970 A1 WO 2017037970A1
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- metal plate
- resist film
- resist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Definitions
- the present invention relates to a method for removing a resist film from a metal plate and a method for producing an etched metal plate.
- Metal plates with etched surfaces and uneven shapes are used for applications that require high aesthetics such as elevator door materials.
- Etching the metal plate corrodes the metal with a liquid (hereinafter also referred to as “etching solution”) having corrosiveness to the metal such as an aqueous iron chloride (III) solution, and forms a recess on the surface of the metal plate.
- etching solution a liquid
- iron chloride (III) solution aqueous iron chloride (III) solution
- the convex portion forms a film (hereinafter also referred to as “resist film”) having resistance to the etching solution on the surface of the metal plate, and protects the region where the film is formed from the etching solution. It is formed by leaving it uncorroded.
- corrugated shape is formed in the surface of a metal plate.
- the etching of the surface of the metal plate is performed by (1) forming a resist film in a region where a convex portion is formed on the surface of the metal plate, and (2) forming a region where the resist film is not formed. Corrosion is performed by an etching solution, and (3) the resist film is removed from the corroded metal plate in the region where the resist film was not formed.
- a resist film is formed by (1-1) applying a photosensitive resin to the surface of a metal plate, and (1-2) applying a photosensitive resin to a negative film that transmits light only in a region where a convex portion is formed. (1-3) Irradiating the metal plate with light from above the negative film to cure only the exposed photosensitive resin, and (1-4) Unexposed and uncured photosensitivity. The procedure is to remove the functional resin.
- the resist film may be formed by an ink jet method. In the formation by the ink jet method, the resist film is formed by (1-1 ′) discharging the composition containing the photosensitive resin from the ink jet head to form a photosensitive resin in a region where the convex portion of the surface of the metal plate is formed. And (1-2 ′) the photosensitive resin that has landed is irradiated with an active energy ray to be cured.
- the resist film containing the cured photosensitive resin (hereinafter also referred to as “resin cured product”) is required to have sufficient adhesion to the surface of the metal plate. If the adhesion to the surface of the metal plate is low, the resist film may be partially peeled from the surface of the metal plate. When the etching solution enters the interface between the partially peeled resist film and the surface of the metal plate, the metal also corrodes in the region where the resist film is formed.
- a resist film obtained by curing a curable composition containing a compound containing a phosphate ester group in the molecule is known to have high adhesion to a metal plate (for example, Patent Documents 1 to 4). 3).
- the resist film containing the cured resin has sufficient resistance to an etching solution (hereinafter also referred to as “etching solution resistance”) and sufficient solubility in a resist removal solution containing a caustic alkali component (hereinafter referred to as “etching solution resistance”). , Also referred to as “alkali solubility”).
- the resist film is removed from the metal plate after the metal plate is corroded by the etching solution.
- the resist film has been removed by dissolving the cured resin constituting the resist film in a resist removing solution containing a caustic alkali component (for example, Patent Document 7).
- a resist removing solution is repeatedly used for removing a resist film from a plurality of metal plates by circulating the solution.
- a resist film formed using a curable composition as disclosed in Patent Documents 1 to 6 includes a cured resin product having a phosphate ester group or a carboxyl group. This cured resin is decomposed to become a compound having a phosphate group or a compound having a carboxyl group, and is dissolved in a resist removing solution containing a caustic alkali component.
- the thus dissolved compound having a phosphate ester group or compound having a carboxyl group is accumulated in the resist solution every time the resist solution is repeatedly used.
- the concentration of the caustic alkali component in the resist removing solution is relatively lowered, so that the resist removing solution removes the resist film as the number of repetitions increases (hereinafter also referred to as “removability”). Gradually decreases.
- these compounds dissolved in the resist removing solution are both lipophilic parts derived from hydrocarbon chains generated by polymerization of the photosensitive resin and hydrophilic parts derived from phosphate ester groups or carboxyl groups. In the molecule, it has the property of foaming in the same manner as the surfactant.
- these compounds dissolved in the resist removing solution are bubbled, the contact between the resist removing solution and the resist film is inhibited by the bubbles, so that the removability of the resist removing solution is further lowered.
- the removability of the resist removing solution decreases as the number of repetitions increases. Therefore, it is said that the resist removing liquid needs to be replaced periodically. From the viewpoint of reducing labor and cost for etching a metal plate, it is desired to suppress a decrease in the removability of the resist removing liquid and to extend the life of the liquid.
- the discharge amount of phosphorus contained in the compound having a phosphate ester group is required to reduce the discharge amount of phosphorus contained in the compound having a phosphate ester group from the viewpoint of preventing environmental pollution.
- the phosphorus concentration in the resist removal solution becomes high, dephosphorization treatment is required before draining the resist removal solution outside the office or factory. From the viewpoint of reducing the labor and cost for etching a metal plate, it is desired that the phosphorus concentration in the resist removal solution is not increased and that the dephosphorization process is made easy or unnecessary.
- the resist removing liquid is required to have a high removability in order to remove the resist film from the metal plate in a shorter time.
- the present invention is a method for removing a resist film containing a cured resin product having a phosphate ester group or a carboxyl group using a resist removal solution having high removability, To provide a method for suppressing a decrease in removability and not substantially increasing the phosphorus concentration in a resist removing solution, and a method for producing an etched metal plate incorporating such a method for removing a resist film. Is the purpose.
- the inventors have conceived a method for sufficiently removing a resist film without substantially dissolving the compound having a phosphate group or the compound having a carboxyl group in a resist removing solution.
- the present invention was completed.
- the first aspect of the present invention is that a resist removal liquid is brought into contact with a resist film containing a cured resin having a phosphate ester group or a carboxyl group, which is disposed on a metal plate, and the resist is removed from the metal plate.
- the second aspect of the present invention includes a step of forming a resist film containing a cured resin product having a phosphate ester group or a carboxyl group in a region of the surface of a metal plate where a convex portion is formed, and the resist film Etching the surface of the metal plate on which the surface has not been formed with an etching solution, and removing the resist film from the metal plate with the surface corroded by the method according to the first aspect of the present invention.
- This is a method for manufacturing a metal plate.
- a resist film containing a cured resin having a phosphate ester group or a carboxyl group disposed on a metal plate is contacted with a resist removal solution
- the present invention relates to a method for removing a resist film from a metal plate.
- the resist removal solution contains benzyl alcohol, water in an amount of a mass ratio of 0.3 to 2.5 and the surfactant substantially free of caustic components.
- a or B means any one of A and B, and both A and B.
- the phrase “substantially free of a certain component” means that the amount of the component in the resist removing solution is less than 1% by mass.
- a resist film containing a cured resin having a phosphate ester group or a carboxyl group has been removed by dissolving in a resist removing solution containing a caustic alkali component.
- the compound derived from the dissolved resin cured product relatively reduces the concentration of the caustic component in the resist removal solution.
- the compound in which the cured resin is dissolved foams in the resist removing solution, and the bubbles generated by the foaming inhibit the contact between the resist removing solution and the resist film.
- the removability of the resist removal solution decreases with repeated use, and it has been necessary to periodically replace the resist removal solution.
- the resist film swells and is peeled off from the metal plate to be removed from the metal plate.
- the resin cured product having a phosphate ester group or a carboxyl group is not substantially dissolved in the resist removing solution, the relative decrease in the concentration of the resist removing solution due to the compound in which the resin cured product is dissolved, and foaming Both are less likely to occur.
- the method according to the present embodiment suppresses a decrease in the removability of the resist removal liquid as compared with the conventional method.
- the method according to the present embodiment removes the resist film without dissolving it, the phosphorus concentration in the resist removal solution after removing the resist is not substantially increased.
- the method according to the present embodiment has a high removability of the resist removing solution.
- the resist film is a film having etching solution resistance formed in a region where a convex portion is formed on the surface of the metal plate.
- the resist film includes a cured resin having a phosphate ester group or a carboxyl group.
- the resist film may contain components other than the cured resin. Examples of components other than the cured resin include components inevitably mixed during or after resist formation.
- the phosphate group is a functional group represented by any of the following formulas (a1) to (a3).
- the phosphate ester group is included in the cured resin for the purpose of improving the adhesion between the resist film and the metal plate.
- the cured resin having the functional group represented by the formula (a2) or (a3) exists on the surface of the metal plate and the hydroxyl group of these functional groups.
- the adhesion between the resist film and the metal plate can be enhanced by the interaction with the metal plate, such as a condensation reaction between the hydroxyl groups.
- a resist film containing a cured resin having a functional group represented by the formula (a3) has higher adhesion to metal.
- the viscosity of the curable composition containing the functional group represented by the formula (a2) is extremely low, the ejection property by the ink jet method is high, and the resist film can be easily formed by the ink jet method.
- the carboxyl group is a functional group represented by —COOH.
- the carboxyl group is included in the cured resin for the purpose of improving the etching solution resistance and improving the alkali solubility of the resist film.
- the cured resin contains a cured resin having a phosphate group or a carboxyl group means that, for example, nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT-IR) and mass spectrometry (MS) are used. It can be confirmed using the usual analysis method.
- NMR nuclear magnetic resonance
- FT-IR Fourier transform infrared spectroscopy
- MS mass spectrometry
- the resin cured product has a phosphate group.
- a dephosphorization treatment of the resist solution is required after the removal.
- the dephosphorization treatment of the resist removal solution is unnecessary or easy. Therefore, the labor and cost for removing the resist are further reduced as compared with the case where the resist is removed by the conventional method.
- the cured resin has both a phosphate ester group and a carboxyl group.
- the removability of the resist removal liquid is less likely to be reduced, and the frequency of liquid replacement can be reduced. it can. Therefore, the labor and cost for removing the resist are further reduced as compared with the case where the resist is removed by the conventional method.
- the method according to the present embodiment does not dissolve the resist film in the resist removing solution, the alkali solubility of the resist film may not be high. Therefore, the curable composition does not need to contain a carboxyl group substantially. Thereby, more various curable compositions can be used for formation of a resist film.
- the metal plate may be any one that can be etched with an etchant and that the resist film is in close contact with.
- the metal constituting such a metal plate include stainless steel, copper, carbon steel, and iron-nickel alloy.
- stainless steel include austenitic stainless steel including SUS304 and SUS316, martensitic stainless steel including SUS410, ferritic stainless steel including SUS430, and precipitation strengthened stainless steel including SUS631.
- the metal plate should be made of a material obtained by cold-rolling austenitic stainless steel or ferritic stainless steel, martensitic stainless steel, or precipitation. It is preferable to include reinforced stainless steel as a main material.
- the resist removal solution contains benzyl alcohol, water, and a surfactant, and does not substantially contain a caustic component.
- the resist removal solution swells the resist film, possibly because water penetrates into the resist film with benzyl alcohol.
- the swollen resist film is peeled off and removed from the metal plate due to a decrease in adhesion to the metal plate.
- Water is contained in the resist removing solution in such an amount that the mass ratio with respect to benzyl alcohol is 0.3 or more and 2.5 or less. If the amount of water is 0.3 or more in terms of the mass ratio with respect to benzyl alcohol, a sufficient amount of water can probably penetrate into the resist film, so that the resist film is sufficiently swollen and peeled off from the metal plate. Removed. If the amount of water is 2.5 or less by mass ratio with respect to benzyl alcohol, the concentration of benzyl alcohol is probably sufficiently high and the water permeability into the resist film is increased, so that the resist is stripped in a shorter time. be able to.
- the amount of water is preferably contained in such an amount that the mass ratio to benzyl alcohol is 0.5 or more and 2.0 or less, and is contained in an amount that is 0.7 or more and 2.0 or less. More preferably, it is contained in an amount of 0.9 or more and 1.9 or less, more preferably 1.2 or more and 1.9 or less.
- the amounts of benzyl alcohol and water in the resist removal solution, and the surfactant and caustic component described later are measured by known methods including nuclear magnetic resonance (NMR) and gas chromatograph mass spectrometry (GC-MS). be able to.
- NMR nuclear magnetic resonance
- GC-MS gas chromatograph mass spectrometry
- the water content can be adjusted to the above range by mixing a predetermined amount of water with commercially available or synthesized benzyl alcohol.
- the water is preferably distilled water with fewer impurities.
- the above surfactants enhance the water permeability into the resist film.
- the surfactant may be any of an anionic surfactant, a cationic surfactant, and a nonionic surfactant.
- anionic surfactants include sulfonic acid type surfactants including sodium xylene sulfonate, sodium dodecylbenzene sulfonate and sodium arylalkyl polyether sulfonate, sodium dodecyl sulfate, sodium tetradecyl sulfate, sodium pentadecyl sulfate, Sulfate ester type surfactants including sodium octyl sulfate and sodium lauryl sulfate, and fatty acid salt forms including sodium oleate, sodium laurate, sodium caprate, sodium caprylate, sodium caproate, potassium stearate and calcium oleate Of surfactants.
- sulfonic acid type surfactants including sodium xylene sulfonate, sodium dodecylbenzene sulfonate and sodium arylalkyl polyether sulfonate, sodium dodecyl sulfate, sodium
- cationic surfactants include tetramethylammonium chloride, hexadecyltrimethylammonium bromide, stearyltrimethylammonium chloride, quaternary ammonium salt type surfactants including benzalkonium chloride and benzethonium chloride, monomethylamine hydrochloride Alkylamine salt type surfactants including salts, dimethylamine hydrochloride and trimethylamine hydrochloride, and pyridine type surfactants including butylpyridinium chloride, dodecylpyridinium chloride and cetylpyridinium chloride are included.
- nonionic surfactants include polyethylene oxide, polypropylene oxide, ether type surfactants including combinations of polypropylene oxide and polyethylene oxide, esters of polyethylene glycol and higher fatty acids, alkylphenol polyethylene oxide, higher fatty acids
- ether ester type surfactant containing an ester of polyethylene glycol and an ester of higher fatty acid and polypropylene oxide, and an ester type surfactant containing sorbitan ester are included.
- ether ester type surfactants include dodecyl polyoxyethylene ether, hexadecyl polyoxyethylene ether, norylphenyl polyoxyethylene ether, lauryl polyoxyethylene ether, sorbitan monooleate polyoxyethylene ether and styrylphenyl. Polyoxyethylene ether is included.
- ester type surfactant include monodecanoyl sucrose.
- the surfactant is preferably an anionic surfactant.
- the content of the surfactant is preferably 3% by mass or more and 20% by mass or less with respect to the total mass of the resist removing solution. If the content of the surfactant is 3% by mass or more with respect to the total mass of the resist removing solution, a sufficient amount of water can probably penetrate into the resist film, so that the resist film swells more sufficiently. , It becomes easy to peel off from the metal plate. If the content of the surfactant is 20% by mass or less with respect to the total mass of the resist removing solution, the concentration of benzyl alcohol is probably sufficiently high and the water permeability into the resist film is further increased. Can be removed in a shorter time.
- the caustic alkali component is an alkali metal hydroxide.
- Examples of the caustic component include sodium hydroxide and potassium hydroxide.
- the resist removing liquid does not substantially contain a caustic alkali component, the cured resin is not dissolved or even if dissolved, the amount is only a minute amount. Therefore, a decrease in the removability of the resist removing solution due to the compound having a phosphate ester group or a carboxyl group dissolved in the resist removing solution is suppressed. From the viewpoint of further suppressing a decrease in removability due to dissolution of the cured resin, it is preferable that the resist removal liquid does not substantially contain components other than benzyl alcohol, water, and a surfactant.
- the contact of the resist removal liquid with the resist film means that the resist removal liquid comes into contact with the resist film in close contact with the metal plate.
- a metal plate to which the resist film is adhered may be immersed in a resist removal solution, or the resist removal solution may be applied to a metal plate to which the resist film is adhered by a spray coating method or a flow coating method.
- the temperature of the resist removing solution that contacts the resist film is 30 ° C. or higher and 80 ° C. or lower.
- the liquid temperature is 30 ° C. or higher, a sufficient amount of water can possibly penetrate into the resist film, so that the resist film swells more sufficiently and is easily peeled off and removed from the metal plate.
- the liquid temperature is set to 80 ° C. or lower, the evaporation rate of water becomes slow, so that it becomes easier to keep the mass ratio of water to the benzyl alcohol during resist removal constant.
- the method according to this embodiment may be repeated for different metal plates. Repeating the method according to this embodiment means that the same resist removal solution is sequentially brought into contact with each of two or more metal plates having the resist film to remove the resist film from both metal plates. Means that. Specifically, at this time, the resist removal liquid used in the method according to the present embodiment is collected and circulated to be brought into contact with the resist film of another metal plate having the resist film.
- the method according to the present embodiment may further include a step of removing the removed resist film from the resist removing solution.
- the method according to the present embodiment may further include a step of adding an amount of water lost by evaporation to the resist removing solution.
- the removed resist film can be removed from the resist removing solution by, for example, scoring the resist film peeled off from the metal plate with a net or filtering the resist removing solution with a filter.
- the removability of the resist removal liquid is not easily lowered even when continuously performed for a long time. Therefore, the removal of the peeled resist film and the addition of evaporated water are performed as appropriate. This can be repeated for a long time without exchanging the resist removing solution. Thereby, the method according to the present embodiment can reduce labor and cost necessary for removing the resist film.
- the method according to the present embodiment does not require the dephosphorization process before draining the resist removal solution, or can easily perform the dephosphorization process. Thereby, the method according to the present embodiment can reduce the labor and cost required for dephosphorization of the resist removal solution after removing the resist film when the cured resin has a phosphate ester group. .
- the second embodiment of the present invention relates to a method for producing an etched metal plate using a resist film containing a cured resin having a phosphate ester group or a carboxyl group.
- the method according to this embodiment can be performed in the same manner as a normal method of manufacturing a metal plate etched using the resist film except that the resist film is removed according to the first embodiment of the present invention. it can.
- a resist film including a cured resin having a phosphate group or a carboxyl group is formed in a region where a convex portion is formed on the surface of a metal plate.
- Step of forming a resist film on the surface of the metal plate In this step, a resist film is formed on the surface of the metal plate.
- This resist film contains a cured resin having a phosphate ester group or a carboxyl group.
- This step is not limited as long as a resist film containing the resin cured product can be formed.
- a resist curable composition containing a compound having a phosphate ester group or a compound having a carboxyl group is used as a metal plate. It may be cured on the surface of
- the resist film is coated with a photosensitive resin on the surface of the metal plate by a coating method or the like, and a negative film that transmits light only in a region where the convex portion is formed is adhered to the metal plate coated with the photosensitive resin,
- the metal plate can be irradiated with light from above the negative film to cure only the exposed photosensitive resin, and the photosensitive resin that has not been exposed and not cured can be removed and formed.
- the resist film can also be formed by an inkjet method. At this time, the resist film discharges the composition containing the photosensitive resin from the inkjet head, and the photosensitive resin is landed on the region where the convex portion of the surface of the metal plate is formed, and the resist film is active on the landed photosensitive resin. It is formed by irradiation with energy rays and curing. Among these, from the viewpoint of forming the resist film more easily and cheaply, formation by an ink jet method is preferable.
- the cured resin cured by these methods may be further subjected to heat treatment from the viewpoint of relaxing internal stress and improving adhesion.
- the curable composition can be a composition that is cured by irradiation with active energy rays, for example.
- the curable composition includes a compound having a phosphate group and an ethylenic double bond group (hereinafter also simply referred to as “polymerizable phosphate compound”), or a carboxyl group and an ethylenic double bond.
- a compound having a group hereinafter, also simply referred to as “polymerizable carboxylic acid compound”.
- a curable composition containing a polymerizable phosphoric acid ester compound or a polymerizable carboxylic acid compound By irradiating a curable composition containing a polymerizable phosphoric acid ester compound or a polymerizable carboxylic acid compound with active energy rays, these compounds are polymerized and cross-linked by an ethylenic double bond group, resulting in a phosphoric acid ester group or a carboxyl group. A resist film containing a cured resin having a group is formed.
- the polymerizable phosphoric acid ester compound can improve the adhesion between the formed resist film and the metal plate.
- the polymerizable carboxylic acid compound can improve the etching solution resistance of the formed resist film. Therefore, the curable composition preferably contains a polymerizable phosphate compound, and more preferably contains both a polymerizable phosphate compound and a polymerizable carboxylic acid compound.
- the polymerizable carboxylic acid compound has been conventionally used to increase the alkali solubility of the formed resist film. However, the step of removing the resist film, which will be described later in this embodiment, removes the resist film. Since the resist film does not dissolve in the solution, the alkali solubility of the resist film may not be high. Therefore, the curable composition may not substantially contain a polymerizable carboxylic acid compound. Thereby, more various curable compositions can be used for formation of a resist film.
- the phosphate ester group and the carboxyl group are the functional groups described above.
- the phosphate group is preferably a functional group represented by the above formula (a2) or (a3).
- the ethylenic double bond group is a functional group having a structure in which one hydrogen atom is extracted from ethylene.
- the ethylene may have a substituent.
- the ethylenic double bond group include a (meth) acryloyl group, a vinyl group, and a vinylidene group.
- the ethylenic double bond group is preferably a (meth) acryloyl group because it is easy to obtain a compound having such a functional group.
- the (meth) acryloyl group means a methacryloyl group or an acryloyl group.
- the polymerizable phosphate ester compound is preferably a compound obtained by esterifying a compound having a (meth) acryloyl group and a hydroxyl group in the molecule and phosphoric acid (H 3 PO 4 ).
- Examples of compounds having a (meth) acryloyl group and a hydroxyl group in the molecule include 2-hydroxymethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 4-hydroxybutyl ( Hydroxyalkyl (meth) acrylates including meth) acrylate and 1,4-cyclohexanedimethanol mono (meth) acrylate, as well as ethylene glycol (meth) acrylate, diethylene glycol (meth) acrylate, triethylene glycol (meth) acrylate and tetraethylene glycol (Poly) ethylene glycol (meth) acrylate containing (meth) acrylate is included.
- the polymerizable phosphate ester compound is preferably a compound represented by any one of the following general formulas (A1) to (A4).
- R represents a hydrogen atom or a methyl group
- R 1 represents an alkylene group having 1 to 4 carbon atoms.
- R is preferably a methyl group from the viewpoint of lowering the viscosity of the curable composition and further improving the dischargeability by the ink jet method. From the viewpoint of further improving the adhesion to the metal, R 1 is preferably an ethylene group.
- R independently represents a hydrogen atom or a methyl group
- R 1 independently represents an alkylene group having 1 to 4 carbon atoms.
- one of two Rs may be a hydrogen atom and the other may be a methyl group.
- one or any of R is preferably a methyl group.
- one or any of R 1 is preferably an ethylene group.
- R each independently represents a hydrogen atom or a methyl group
- R 1 represents an alkylene group having 1 to 4 carbon atoms
- R 2 represents an alkylene group having 1 to 10 carbon atoms.
- R is preferably a methyl group from the viewpoint of lowering the viscosity of the curable composition and further improving the dischargeability by the ink jet method.
- R 1 is preferably an ethylene group
- R 2 is preferably a pentene group.
- each R independently represents a hydrogen atom or a methyl group
- each R 1 independently represents an alkylene group having 1 to 4 carbon atoms
- each R 2 independently represents 1 to 10 carbon atoms.
- the following alkylene groups are represented.
- R is preferably a methyl group from the viewpoint of lowering the viscosity of the curable composition and further improving the dischargeability by the ink jet method.
- one or any of R 1 is preferably an ethylene group
- one or any of R 2 is preferably a pentene group.
- the curable composition preferably contains the polymerizable phosphate ester compound in an amount of 0.5% by mass or more and 20% by mass or less with respect to the total mass of monomers contained in the curable composition.
- the content of the polymerizable phosphate compound is 0.5% by mass or more, the adhesion between the resist film and the metal can be further improved.
- the etching liquid resistance of a resist film can be improved more because the said content shall be 20 mass% or less.
- the content of the polymerizable phosphate ester compound is 1% by mass or more and 20% by mass or less. Is more preferably 1% by mass or more and 15% by mass or less, more preferably 2% by mass or more and 12% by mass or less, and further preferably 3% by mass or more and 10% by mass or less.
- Examples of the polymerizable carboxylic acid compound include a monoester reaction product of an acid anhydride or dibasic acid and a hydroxyl group-containing (meth) acrylate.
- Examples of the dibasic acid or acid anhydride include phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, maleic acid, succinic acid, and anhydrides thereof.
- Examples of the hydroxyl group-containing (meth) acrylates include hydroxy, including 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate and 4-hydroxybutyl (meth) acrylate. Alkyl (meth) acrylates, as well as adducts of ethylene oxide or propylene oxide to 2-hydroxyethyl (meth) acrylate are included.
- the polymerizable carboxylic acid compound is preferably a compound represented by the following general formula (B1).
- X represents an alkylene group having 1 to 3 carbon atoms.
- X is an alkylene group having 1 carbon atom
- the carbonyl group and the carboxyl group are close to each other and intramolecular association is likely to occur
- X is an alkylene group having 2 or 3 carbon atoms
- the carbon-carbon bond in the alkylene group Rotation tends to cause intramolecular association.
- X is preferably a methylene group or an ethylene group, and particularly preferably an ethylene group.
- Y represents an alkylene group having 2 or 3 carbon atoms.
- the number of carbon atoms in Y is 2 or 3, the distance between the polymerizable functional group and the carboxyl group is shortened, and the etching solution is difficult to penetrate between these functional groups.
- the sex can be increased.
- Y is preferably an ethylene group.
- R is a hydrogen atom or a methyl group.
- Examples of the compound represented by the general formula (B1) include 2-acryloyloxyethyl succinic acid, 2-methacryloyloxyethyl succinic acid, 2-acryloyloxypropyl succinic acid, 2-acryloyloxyethyl malonic acid. And 2-acryloyloxyethyl glutaric acid.
- the curable composition preferably contains the polymerizable carboxylic acid compound in an amount of 1% by mass to 30% by mass with respect to the total mass of monomers contained in the curable composition. More preferably, it is contained in an amount of mass% or less.
- the curable composition may contain a polymerizable compound other than the polymerizable phosphate compound or the polymerizable carboxylic acid compound as long as it has releasability by the resist removing solution.
- these polymerizable compounds include 2-phenoxyethyl acrylate, acryloyl morpholine, isobornyl acrylate, N-vinylcaprolactam, dimethylacrylamide, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 4-hydroxybutyl acrylate , Isobutyl acrylate, t-butyl acrylate, isooctyl acrylate, isobornyl acrylate, cyclohexyl acrylate, dodecyl acrylate, 2-methoxyethyl acrylate, methoxytriethylene glycol acrylate, 2-ethoxyethyl acrylate, tetrahydrofurfuryl acrylate, 3-methoxy Butyl acryl
- the polyfunctional monomer has an ethylenic double bond group amount of 4 ⁇ 10 ⁇ defined by the ethylenic double bond group amount / molecular weight. It is preferably 3 or more and 8 ⁇ 10 ⁇ 3 mol / g or less.
- the above-mentioned curable composition may contain components such as a photopolymerization initiator and a photosensitizer as long as the resist remover can be removed.
- the viscosity at 25 ° C. of the curable composition is 5000 mPa ⁇ s or less from the viewpoint of more uniformly applying the curable composition. Is preferable, and 2000 mPa ⁇ s or less is more preferable. What is necessary is just to select the coating method from what can apply
- the viscosity of the curable composition at 25 ° C. is 3 mPa ⁇ s. It is preferably 50 mPa ⁇ s or less.
- the ejection method using the inkjet method may be either a piezo method or a thermal method.
- the ink jet method since the curable composition is landed and cured only in the region where the resist film is to be formed, a finer pattern can be easily produced, and the amount of the curable composition to be used can be increased. Can be reduced.
- the inkjet method can easily cope with a design change only by changing the landing area, it is preferably used for applications requiring a small amount of various types of etched metal plates including printed wiring boards. Can do.
- Examples of active energy rays irradiated to the curable composition include infrared rays, visible rays, ultraviolet rays, X-rays, electron beams, alpha rays, beta rays, and gamma rays.
- the wavelength of an active energy ray can be suitably determined in the range in which the said curable composition hardens
- active energy ray sources include metal halide lamps, mercury lamps, low-pressure mercury lamps, low-pressure and solid-state lasers, xenon flash lamps, black lights, germicidal lamps, cold cathode tubes, light-emitting diodes (LEDs), and laser diodes (LDs). Is included. Of these, metal halide lamps, LEDs, and LDs are preferred from the viewpoints of long life, high luminous efficiency, and low cost.
- Step of corroding the surface of the metal plate with an etching solution to form a recess the surface of the metal plate on which the resist film is formed is corroded with an etching solution to form a recess.
- Corrosion with an etching solution can be performed by a known method. For example, a metal plate on which a resist film is formed is immersed in an etching solution to corrode a region of the surface of the metal plate where the resist film is not formed, thereby forming a recess on the surface of the metal plate. .
- Step of removing resist film In this step, the resist film is removed from the metal plate etched in the previous step according to the first embodiment of the present invention.
- the removability of the resist removal liquid is not easily lowered even when continuously performed for a long time. Therefore, the removal of the peeled resist film and the addition of evaporated water are performed as appropriate. This can be repeated for a long time without exchanging the resist removing solution. Thereby, the method which concerns on this embodiment can reduce the effort and cost which manufacture the metal plate by which the surface was etched.
- the method according to the present embodiment does not require the dephosphorization process before draining the resist removal solution, or can easily perform the dephosphorization process.
- the method according to the present embodiment uses a curable composition containing a polymerizable phosphoric ester compound, reducing the labor and cost required for the dephosphorization treatment of the resist removal solution after removing the resist film.
- it is possible to reduce labor and cost of manufacturing a metal plate whose surface is etched.
- the type and amount of the polymerizable phosphate ester compound, the polyfunctional monomer, the monofunctional monomer, the polymerizable carboxylic acid compound and the photopolymerization initiator are changed as shown in Table 1, and the curable composition 2 and the curing Sexual composition 3 was prepared.
- the numerical value of each component in each curable composition indicates the content (% by mass) of the component in the curable composition.
- Resist removal solutions 2 to 15 were prepared by changing the types and amounts of benzyl alcohol, water, and surfactant as shown in Table 2.
- the numerical value of each component in each resist removal solution indicates the content (% by mass) of that component in the resist removal solution.
- the numerical value described in the column of “mass ratio of water to benzyl alcohol” indicates a value obtained by dividing the content (% by mass) of water by the content (% by mass) of benzyl alcohol.
- Example 1 Using an inkjet printer equipped with a piezo-type inkjet head, the curable composition 1 was ejected onto the surface of a 0.5 mm thick stainless steel plate (SUS304, BA finish) to draw a 1 cm ⁇ 5 cm uncured resist. .
- the curable composition was cured by irradiating the metal plate with ultraviolet rays using a UV irradiation apparatus (metal halide lamp M0151-L212, 1 lamp: 120 W) manufactured by I-Graphics Co., Ltd. Obtained.
- the metal plate was irradiated with ultraviolet rays four times at a conveyance speed of 10 m / min. Thereafter, the metal plate irradiated with ultraviolet rays was heat-treated in an oven at 120 ° C. for 15 minutes.
- the thickness of the resist film thus formed was 8 ⁇ m and the thickness was uniform.
- the metal plate on which the resist film was formed was immersed in a resist removing liquid 1 heated to 60 ° C., and the time until the drawn resist was visually observed from the metal plate was measured. Based on the measured time, the removability of the resist removing solution was evaluated.
- the evaluation criteria were as follows. A: Peeled in a time of 1 minute or less after immersion. ⁇ : Peeled in a time longer than 1 minute after immersion and 2 minutes or less. ⁇ : Peeled in a time longer than 2 minutes after immersion and 10 minutes or less. X: 10 minutes after immersion. It did not peel off after the lapse
- Examples 2 to 13, Comparative Examples 1 to 4 Except for using the combination of the curable composition and the resist removing liquid described in Table 5, the time until the drawn resist was peeled from the metal plate was measured in the same manner as in Example 1, and the removal of the resist removing liquid was performed. Sex was evaluated.
- the resist removal liquid containing benzyl alcohol water whose mass ratio to benzyl alcohol is 0.3 to 2.5, and a surfactant, a cured resin having a phosphate group and a carboxyl group is obtained.
- the resist film containing it was able to be removed from the metal plate.
- the resist film was peeled off and removed from the metal plate, it was estimated that the compound having a phosphate ester group or the compound having a carboxyl group was not dissolved in the resist removing solution.
- production of the foam produced when these compounds foam was also not confirmed visually.
- the mass ratio of water to benzyl alcohol is 1.2 or more and 2.0 or less, the removability of the resist removing solution is the highest.
- the resist film could not be removed with water containing no benzyl alcohol.
- the resist removal solution having a mass ratio of water to benzyl alcohol of greater than 2.5 was used, the resist removability was low.
- Example 14 After removing the resist 10 times using 100 ml of the resist removing solution in Example 12, the phosphorus concentration in the resist removing solution was determined by the potassium peroxodisulfate decomposition method (factory drainage test method JIS K 0102 46.3.1) and molybdenum. Phosphorus was not detected when measured by combining blue absorptiometry (factory drainage test method JIS K 0102 46.1.1).
- Example 5 A resist film formed by curing the curable composition 3 in the same manner as in Example 12 was immersed in a 5 wt% aqueous sodium hydroxide solution at 60 ° C. for 20 minutes, dissolved and peeled off. When the phosphorus concentration in the aqueous sodium hydroxide solution was measured by the same method as in Example 14, 4 mg / L of phosphorus was detected.
- the resist removal solution contains a large amount of phosphorus.
- the present invention makes it possible to etch a large number of metal plates more easily and inexpensively, and contributes to further diffusion and development of the etching of metal plates.
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Abstract
Description
本発明の第一の実施形態は、金属板の上に配置された、リン酸エステル基またはカルボキシル基を有する樹脂硬化物を含むレジスト膜に、レジスト除去液を接触させて、金属板からレジスト膜を除去する方法に係る。上記レジスト除去液は、ベンジルアルコール、ベンジルアルコールに対する質量比が0.3以上2.5以下である量の水および界面活性剤を含有し、苛性アルカリ成分を実質的に含有しない。なお、本発明において「AまたはB」とは、AおよびBのうちいずれか一方、ならびにAおよびBの両方、のいずれかを意味する。また、本発明において、ある成分を実質的に含まないとは、レジスト除去液中のその成分の量が、1質量%未満であることを意味する。
本発明の第二の実施形態は、リン酸エステル基またはカルボキシル基を有する樹脂硬化物を含むレジスト膜を用いて、エッチングされた金属板を製造する方法に係る。本実施形態に係る方法は、レジスト膜の除去を上記本発明の第一の実施形態によって行うほかは、上記レジスト膜を用いてエッチングされた金属板を製造する通常の方法と同様に行うことができる。
本工程では、金属板の表面にレジスト膜を形成する。このレジスト膜は、リン酸エステル基またはカルボキシル基を有する樹脂硬化物を含む。
本工程では、レジスト膜が形成された金属板の表面をエッチング液に腐食させて、凹部を形成する。エッチング液による腐食は、公知の方法で行うことができる。たとえば、レジスト膜が形成された金属板を、エッチング液に浸漬して、金属板の表面のうち、レジスト膜が形成されていない領域を腐食させることで、金属板の表面に凹部が形成される。
本工程では、前工程でエッチングされた金属板から、上記本発明の第一の実施形態によって、レジスト膜を除去する。
以下の材料を準備した。
ジ(2-メタアクリロイロキシエチル)アシッドホスフェート(共栄社化学株式会社製、ライトエステルP-2M)
2-メタアクリロイロキシエチルアシッドホスフェート(共栄社化学株式会社製、ライトエステルP-1M)
[多官能性モノマー]
ジプロピレングリコールジアクリレート(新中村化学工業株式会社製、APG-100)
[単官能性モノマー]
ジメチルアクリルアミド(KJケミカルズ株式会社製、DMAA)
イソボルニルアクリレート(共栄社化学株式会社製、ライトアクリレートIB-XA)
[重合性カルボン酸化合物]
2-アクリロイロキシエチルコハク酸(共栄社化学株式会社製、HOA-MS)
[光重合開始剤]
1-ヒドロキシシクロヘキシルフェニルケトン(BASF社製、イルガキュア184、「イルガキュア」は同社の登録商標)
ビス(2,4,6-トリメチルベンゾイル)-フェニルフォスフィンオキサイド(BASF社製、イルガキュア819)
以下の材料を準備した。
ベンジルアルコール(サンケミカル株式会社製、ベンジルアルコール)
水
[界面活性剤]
(アニオン系界面活性剤)
2,4-キシレンスルホン酸ナトリウム(伊藤忠ケミカルフロンティア株式会社製、SXS-Y)
ドデシルベンゼンスルホン酸ナトリウム(日本乳化剤株式会社製、ニューコール210)
(ノニオン系界面活性剤)
ポリオキシアルキレンアルキルエーテル(第一工業製薬株式会社製、ノイゲン ET-165、「ノイゲン」は同社の登録商標)
(カチオン系界面活性剤)
ステアリルトリメチルアンモニウムクロライド(花王株式会社製、ユータミン 86P コンク、「ユータミン」は同社の登録商標)
ピエゾ型インクジェットヘッドを搭載したインクジェットプリンタを用いて、上記硬化性組成物1を0.5mm厚みのステンレス鋼板(SUS304、BA仕上げ)の表面に吐出し、1cm×5cmの未硬化のレジストを描画した。
上記レジスト膜が形成された金属板を、60℃に加熱したレジスト除去液1に浸漬して、描画したレジストの金属板からの剥離が目視で確認されるまでの時間を測定した。測定された時間をもとに、レジスト除去液の除去性を評価した。評価基準は次のとおりとした。
◎:浸漬後1分以下の時間で剥離した
○:浸漬後1分より長く2分以下の時間で剥離した
△:浸漬後2分より長く10分以下の時間で剥離した
×:浸漬後10分経過後も剥離しなかった
表5に記載の硬化性組成物およびレジスト除去液の組み合わせを用いた以外は実施例1と同様にして、描画されたレジストが金属板から剥離するまでの時間を測定し、レジスト除去液の除去性を評価した。
実施例12で100mlのレジスト除去液を用いて10回レジストを除去した後のレジスト除去液中のリン濃度をペルオキソ二硫酸カリウム分解法(工場排水試験法 JIS K 0102 46.3.1)とモリブデン青吸光光度法(工場排水試験法 JIS K 0102 46.1.1)を組み合わせることによって測定したところ、リンは検出されなかった。
硬化性組成物3を実施例12と同様に硬化させて形成したレジスト膜を、60℃の5wt%水酸化ナトリウム水溶液に20分間浸漬して、溶解させ剥離した。水酸化ナトリウム水溶液中のリン濃度を実施例14と同一の方法で測定したところ、4mg/Lのリンが検出された。
Claims (8)
- 金属板の上に配置された、リン酸エステル基またはカルボキシル基を有する樹脂硬化物を含むレジスト膜に、レジスト除去液を接触させて、金属板からレジスト膜を除去する方法であって、
前記レジスト除去液は、ベンジルアルコール、ベンジルアルコールに対する質量比が0.3以上2.5以下である量の水、および界面活性剤を含有し、苛性アルカリ成分を実質的に含有しない、方法。 - 前記レジスト膜は、リン酸エステル基を含む、請求項1に記載の方法。
- 前記レジスト膜は、リン酸エステル基およびカルボキシル基を含む、請求項1に記載の方法。
- 前記界面活性剤は、アニオン系界面活性剤、カチオン系界面活性剤およびノニオン系界面活性剤からなる群から選択される少なくとも1種の界面活性剤である、請求項1~3のいずれか1項に記載の方法。
- 前記界面活性剤の量は、前記レジスト除去液の全質量に対して、3質量%以上20質量%以下である、請求項1~4のいずれか1項に記載の方法。
- 前記接触するレジスト除去液の液温は、30℃以上80℃以下である、請求項1~5のいずれか1項に記載の方法。
- リン酸エステル基またはカルボキシル基を有する樹脂硬化物を含むレジスト膜を金属板の表面のうち凸部が形成される領域に形成する工程と、
前記レジスト膜が形成されなかった前記金属板の表面をエッチング液によって腐食させる工程と、
請求項1~6のいずれか1項に記載の方法で、前記表面が腐食した金属板からレジスト膜を除去する工程と、を含むエッチングされた金属板の製造方法。 - 前記レジスト膜を形成する工程は、
リン酸エステル基およびエチレン性二重結合基を有する化合物、またはカルボキシル基およびエチレン性二重結合基を有する化合物、を含有する硬化性組成物をインクジェットヘッドから吐出して金属板の表面のうち凸部が形成される領域に着弾させる工程と、
前記金属板の表面に着弾した前記硬化性組成物に活性エネルギー線を照射して硬化させる工程とを含む、請求項7に記載の製造方法。
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EP3346338A1 (en) | 2018-07-11 |
CN107924145A (zh) | 2018-04-17 |
US20180253009A1 (en) | 2018-09-06 |
JP2017049473A (ja) | 2017-03-09 |
EP3346338A4 (en) | 2019-01-23 |
US10156789B2 (en) | 2018-12-18 |
JP6109896B2 (ja) | 2017-04-05 |
KR20180026800A (ko) | 2018-03-13 |
EP3346338B1 (en) | 2020-05-06 |
KR101882163B1 (ko) | 2018-07-25 |
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