WO2017010307A1 - ウェハ保持体 - Google Patents

ウェハ保持体 Download PDF

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Publication number
WO2017010307A1
WO2017010307A1 PCT/JP2016/069570 JP2016069570W WO2017010307A1 WO 2017010307 A1 WO2017010307 A1 WO 2017010307A1 JP 2016069570 W JP2016069570 W JP 2016069570W WO 2017010307 A1 WO2017010307 A1 WO 2017010307A1
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WO
WIPO (PCT)
Prior art keywords
metal
electrode
wafer holder
terminal
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/069570
Other languages
English (en)
French (fr)
Inventor
木村　功一
成伸 先田
健司 新間
大介 島尾
板倉　克裕
夏原　益宏
晃 三雲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to US15/739,061 priority Critical patent/US10886157B2/en
Priority to KR1020187000275A priority patent/KR102501916B1/ko
Priority to KR1020237005352A priority patent/KR102687900B1/ko
Publication of WO2017010307A1 publication Critical patent/WO2017010307A1/ja
Anticipated expiration legal-status Critical
Priority to US16/952,092 priority patent/US12033880B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details

Definitions

  • the present invention relates to a wafer holder.
  • This application claims priority based on Japanese Patent Application No. 2015-139738 filed on July 13, 2015, and uses all the contents described in the above Japanese application.
  • Patent Document 1 discloses a susceptor including a ceramic member in which a conductive member corresponding to a heater electrode for heating or the like is embedded.
  • Patent Document 2 a screw hole is provided on the lower surface side of a disk-shaped ceramic substrate having an electric circuit therein to expose the electric circuit, and a metal terminal (anchor member) is screwed into the screw hole.
  • a ceramic susceptor has been proposed in which one end is connected to an electric circuit and the other end is connected to a conductive member for power feeding.
  • Patent Document 3 discloses a technique in which a metal terminal inserted from the lower surface side of a wafer holder is connected to an electrode embedded in a ceramic wafer holder via a connection terminal.
  • the wafer holder provided by the present disclosure is inserted from a disk-shaped ceramic base having a wafer mounting surface on the upper surface side, an electrode embedded in the base, and a lower surface side of the base.
  • a wafer holder having a metal terminal and a connection terminal for electrically connecting the electrode and the metal terminal to each other, the connection terminal comprising a ceramic member made of the same material as the base, and a surface of the ceramic member
  • the upper end of the metal layer is connected to the electrode, and the lower end of the metal layer is connected to the metal terminal via a metal member.
  • the present invention has been made in view of such a situation.
  • a ceramic wafer holder having a heater circuit, an RF electrode, and the like inside the heater circuit, the RF electrode, etc. are reliably supplied from the outside.
  • an object of the present invention is to provide a highly reliable wafer holder that is unlikely to be damaged by a difference in thermal expansion in the power feeding portion.
  • a wafer holder according to an embodiment of the present invention is inserted from a disk-shaped ceramic substrate having a wafer mounting surface on the upper surface side, an electrode embedded in the substrate, and a lower surface side of the substrate.
  • a wafer holder having a metal terminal and a connection terminal for electrically connecting the electrode and the metal terminal to each other, the connection terminal comprising a ceramic member made of the same material as the base, and a surface of the ceramic member
  • the upper end part of the metal layer is connected to the electrode, and the lower end part of the metal layer is connected to the metal terminal via a metal member.
  • the surface of the ceramic member is preferably covered with a metal layer over the entire surface in order to reduce electric resistance.
  • the disc shape is not limited to a strict perfect circle, and includes an elliptical shape represented by a major axis and a minor axis and a shape close thereto.
  • the wafer holder according to an embodiment of the present invention may have a structure in which the metal terminal is screwed into the base body, or a structure in which the metal terminal is screwed into the metal member.
  • the metal terminal can be securely fixed with a simple structure.
  • the contact area between the metal terminal and the metal member is increased, it is possible to realize even lower resistance.
  • the ceramic member of the connection terminal has a truncated cone shape.
  • the connection terminals can be easily adhered to the substrate without any gap.
  • a portion of the ceramic base located above the electrode fed with power through the connection terminal is connected to the connection terminal. It is possible to prevent troubles such as cracking and warping caused by being pressed by the terminal.
  • the electrode may be an RF plasma forming electrode, a heater electrode, or an electrostatic chuck electrode. Even if the electrode is any of these, the various effects described above can be obtained.
  • the wafer holder 10 of the first specific example of the present invention is a disc-shaped base body 11 having a wafer mounting surface 11a on the upper surface side on which a semiconductor wafer (not shown) as an object to be processed is mounted.
  • An RF electrode 12 embedded in the base 11, a metal terminal 13 inserted from the lower surface side of the base 11, and a connection terminal 14 for electrically connecting the RF electrode 12 and the metal terminal 13 to each other. have.
  • the base 11 is a member that is generally supported horizontally from below by a cylindrical support member, and the base 11 may be made of aluminum nitride, silicon nitride, silicon carbide, or oxide. It is preferable to use ceramics excellent in rigidity and thermal conductivity such as aluminum, and aluminum nitride is more preferable.
  • An RF electrode 12 for making a plasma atmosphere above the wafer placement surface 11a at the time of film formation is embedded in a surface parallel to the wafer placement surface 11a.
  • a metal terminal 13 is inserted on the lower surface side of the base 11 with the lower end protruding.
  • the metal terminal 13 is threaded at least on the outside of the upper end portion, and is screwed into the screw hole of the base 11 into which the metal terminal 13 is screwed.
  • a conductive wire (not shown) is connected to the lower end of the protruding metal terminal 13.
  • a heater electrode 15 for heating the semiconductor wafer mounted on the wafer mounting surface 11 a is embedded in the base 11 so as to be spaced below the RF electrode 12.
  • the power supply to the heater electrode 15 may have the same structure as that of the RF electrode 12 or a general terminal structure, and thus the description thereof is omitted.
  • a connecting terminal 14 comprising a truncated conical ceramic member 14 a made of the same material as that of the base 11 and a metal layer 14 b covering the entire side surface is embedded in the base body 11.
  • the connection terminal 14 is embedded with its central axis directed in the thickness direction of the base 11, and the tapered tip end side end surface abuts on the lower side of the RF electrode 12, and the opposite lower end side The end surface is in contact with the upper end surface of the metal terminal 13 via the disk-shaped metal member 16.
  • the ceramic member 14a is formed of the same material as that of the base 11, there is almost no difference in thermal expansion over a wide temperature range, so that thermal stress is hardly generated between the connection terminal 14 and its peripheral portion. Even if the substrate 11 is a thin wafer holder, breakage such as cracks is less likely to occur.
  • the shape of the ceramic member 14a may be a columnar shape, a prismatic shape, a columnar shape with a reduced or enlarged middle portion, a truncated pyramid shape, etc., but a more reliable connection terminal structure can be easily produced. In the above, the truncated cone shape described above is most preferable.
  • the material of the metal layer 14b and the metal member 16 and the material of the RF electrode 12 and the heater electrode 15 described above are preferably tungsten (W), molybdenum (Mo), or an alloy thereof except for inevitable impurities. This is because any of these metals has a relatively small difference in thermal expansion coefficient from the ceramics forming the substrate 11 and can suppress the occurrence of defects such as warping or cracking of the wafer holder.
  • the material of the metal terminal 13 is selected from the group consisting of tungsten, molybdenum, and alloys thereof, nickel, kovar, copper-tungsten alloy, copper-molybdenum alloy, copper-nickel-iron-tungsten alloy, excluding inevitable impurities. At least one selected from the above is preferred.
  • the disk-shaped metal member 16 that contacts the lower end side end surface of the connection terminal 14 has a larger outer diameter than the outer diameter of the lower end side end surface of the connection terminal 14.
  • the metal layer 14b of the connection terminal 14 has an annular upper end that contacts the RF electrode 12 over the entire circumference, and an annular lower end that also contacts the metal member 16 over the entire circumference. it can. Therefore, the upper end portion of the metal terminal 13 and the RF electrode 12 can be more reliably conducted than the conventional power supply terminal, and troubles such as local generation of Joule heat are less likely to occur during power supply.
  • the shape of the metal member 16 is not limited to a disk shape as long as the annular lower end portion of the metal layer 14b can be contacted over the entire circumference, but is not limited to a polygonal plate member or an annular member. There may be.
  • the wafer holder described above can be produced, for example, by the following method. That is, first, three ceramic substrates having the same material and the same outer diameter are prepared, and a through hole is provided at a position where the connection terminal 14 is embedded in one of the substrates.
  • the through hole has a tapered structure such that the inner diameter gradually decreases toward the wafer mounting surface 11a. Then, a frustoconical ceramic member having a taper structure that fits into the through hole and made of the same material as the ceramic substrate is prepared, and the side surface is formed of a metal layer having substantially the same thickness all around cover.
  • a tungsten layer having a thickness of about 10 to 50 ⁇ m may be coated by a metallization method in which a tungsten paste is applied and fired, or a meat that can be attached to the side surface of the ceramic member.
  • a sleeve-like member made of tungsten having a thickness of about 50 ⁇ m to 2 mm may be separately manufactured and attached to the side surface of the ceramic member.
  • a tungsten paste patterning layer is applied by screen printing. After coating, the patterning layer is dried and degreased in a nitrogen atmosphere at about 800 ° C., and the remaining two substrates are superposed on the front and back surfaces, respectively, and hot-pressed in a nitrogen atmosphere at about 1800 ° C. As a result, a disk-like combined body in which three ceramic substrates are integrated is obtained.
  • a counterbore hole having an inner diameter large enough to fit the metal terminal from the lower surface side of the disk-shaped joined body toward the ceramic member is formed, and the lower end portion of the ceramic member is exposed together with the metal layer covering the side surface.
  • the metal member is joined to the exposed metal layer and the lower end portion of the ceramic member by brazing or preferably metallizing with tungsten.
  • the front end surface is brought into contact with the lower end surface of the metal member while screwing the metal terminal having the front end portion screwed into the counterbore. Thereby, the wafer holder is completed.
  • the metal terminal 23 and the base 21 are not screwed together, but instead the metal terminal 23 and the metal member 26 are The other features are that they are screwed together, and the rest of the structure is basically the same as that of the wafer holder 10 of the first specific example of the present invention described above.
  • a disk-shaped base 21 made of, for example, aluminum nitride having a wafer mounting surface 21 a on the upper surface side, an RF electrode 22 embedded in the base 21, and a lower surface of the base 21 are inserted.
  • the connection terminal 24 includes a truncated conical ceramic member 24 a made of the same material as the base 21, and a metal layer 24 b covering the entire side surface of the connection member 24, and the tapered end surface side end surface is below the RF electrode 22.
  • the lower end side end surface on the opposite side is electrically connected to the upper end surface of the metal terminal 23 via the disk-shaped metal member 26.
  • the metal terminal 23 and the metal member 26 are screwed with a male screw portion protruding downward on the lower surface of the metal member 26.
  • a male screw portion that protrudes upward may be provided at the tip portion of the metal member, and a female screw that engages with the male screw portion may be provided on the lower surface side of the metal member.
  • the wafer holder 30 according to the third embodiment of the present invention is provided with a step in the screw hole of the base 31 into which the metal terminal 33 is inserted so that the inner diameter of the screw hole is on the opening side.
  • a cylindrical sealing member 37 is externally provided so as to surround the metal terminal 33 at the large diameter portion.
  • the space between the annular tip of the sealing member 37 and the step of the screw hole is sealed with glass 38.
  • the wafer holder of the third specific example of the present invention is basically the same as the wafer holder 10 of the first specific example of the present invention except for the cylindrical sealing member 37 and the glass 38 described above. It has a structure. Specifically, a disk-shaped base 31 made of, for example, aluminum nitride having a wafer mounting surface 31 a on the upper surface side, an RF electrode 32 embedded in the base 31, and a lower surface of the base 31 are inserted. A metal terminal 33, a connection terminal 34 for electrically connecting the RF electrode 32 and the metal terminal 33 to each other, and a heater electrode 35 embedded below and spaced below the RF electrode 32. Yes.
  • connection terminal 34 is composed of a truncated conical ceramic member 34 a made of the same material as the base 31 and a metal layer 34 b covering the entire side surface of the connection member 34. And the lower end side end surface on the opposite side is electrically connected to the upper end surface of the metal terminal 33 via the disk-shaped metal member 36.
  • This cylindrical sealing member and glass sealing may be applied to the power supply terminal structure of the wafer holder 130 of the second specific example described above as shown in FIG. 3B. Further, as shown in the wafer holder 230 in FIG. 3C, a flange 233a is formed at the position of the stepped portion of the screw hole of the base 231 in the metal terminal 233, and the lower surface side of the flange 233a and the stepped surface of the screw hole Alternatively, the front end surface of the cylindrical sealing member 37 may be opposed to the glass 38 in the facing portion. In this case, since the sealing surface by the glass 38 is perpendicular to the pressing direction of the cylindrical sealing member 37, the sealing can be performed more reliably.
  • the wafer holder 330 is a metal to which the substrate is fixed, as can be seen by comparing the wafer holder 330 of FIG. 3D applied to the second specific example with the wafer holder 230 of FIG. 3C described above. Since the separation distance L2 between the front end portion of the terminal 333 and the flange portion 333a can be made shorter than the separation distance L1 in the case of the wafer holder 230, the influence of the difference in thermal expansion between the base material and the metal terminal of different materials can be obtained. Because it can be less.
  • the wafer holder 40 according to the fourth specific example of the present invention has an approximately the same diameter as that of the sealing member 47 on the upper part of a cylindrical sealing member 47 fitted on the metal terminal 43.
  • An annular member 49 is provided.
  • the glass 48 is filled between the sealing member 47 and the annular member 49, and the glass is not filled between the annular member 49 and the stepped portion of the screw hole.
  • the wafer holder of the fourth specific example of the present invention is basically the wafer holder of the first specific example of the present invention except for the cylindrical sealing member 47, the annular member 49 and the glass 48 described above. 10 has the same structure. Specifically, a disc-shaped base 41 made of, for example, aluminum nitride having a wafer mounting surface 41 a on the upper surface side, an RF electrode 42 embedded in the base 41, and a lower surface of the base 41 are inserted. A metal terminal 43, a connection terminal 44 for electrically connecting the RF electrode 42 and the metal terminal 43 to each other, and a heater electrode 45 buried below and spaced below the RF electrode 42. Yes.
  • connection terminal 44 includes a truncated conical ceramic member 44 a made of the same material as the base body 41 and a metal layer 44 b covering the entire side surface of the connection member 44, and the tapered end surface side end surface is below the RF electrode 42.
  • the lower end side end surface on the opposite side is electrically connected to the upper end surface of the metal terminal 43 via the disk-shaped metal member 46.
  • a corner portion A such as a stepped portion of a screw hole of a ceramic substrate
  • stress may concentrate on the glass at the corner portion and cracks may occur. Since it is not necessary to fill the corner A with glass by filling the glass between the annular member and the annular member, it is possible to seal more reliably. In this case, it is more preferable to form the corner A of the stepped portion of the screw hole with a smooth curved surface.
  • the wafer holders 140, 240, and 340 in FIGS. 4B to 4D correspond to the wafer holders 130, 230, and 330 in FIGS. 3B to 3D in the third specific example, respectively. In addition to the effect of the third specific example of the present invention, the effect of the sealing member divided into two is obtained.
  • the wafer holder of the present invention has been described with reference to a plurality of specific examples. However, the present invention is not limited to these specific examples, and can be implemented in various modes without departing from the gist of the present invention. is there.
  • the electrodes (embedded electrodes) embedded therein are RF electrodes and heater electrodes for plasma formation, but instead of any of these electrodes or these electrodes.
  • an electrostatic chuck electrode may be embedded, and the above-described feeding terminal structure may be applied to at least one of these electrodes.
  • a wafer holder of the first specific example of the present invention as shown in FIG. 1 was produced and operated. Specifically, first, three aluminum nitride (AlN) disks having an outer diameter of 330 mm and thicknesses of 9 mm, 5 mm, and 9 mm were prepared. Among these three, a tapered through-hole having an average inner diameter of 4 mm was provided in one ceramic substrate having a thickness of 9 mm, and a truncated cone made of aluminum nitride having the same taper angle as this taper angle was prepared. A tungsten paste was applied to the side surface of the truncated cone and then fired to provide a metal layer having a thickness of 0.03 mm.
  • AlN aluminum nitride
  • a truncated cone whose side surface was metallized was fitted into the through hole of the ceramic substrate and fixed.
  • a patterning layer of tungsten paste for RF electrodes and heater electrodes was applied to the front and back surfaces of the ceramic substrate by screen printing, respectively, and baked to form electrodes.
  • the 5 mm ceramic substrate described above was superposed on the RF electrode side of the ceramic substrate having electrodes formed on the front and back surfaces, and a 9 mm ceramic substrate was superposed on the opposite heater electrode side. In this state, the three ceramic substrates were integrated by hot pressing.
  • a counterbore hole was formed by machining from the lower surface side of the integrated substrate toward the truncated cone, and the lower end portion of the truncated cone was exposed together with the metal layer on the side surface. Then, a tungsten disk having an outer diameter of 5.0 mm and a thickness of 1 mm was joined to the exposed metal layer and the lower end portion of the truncated cone using a tungsten paste. Then, a tungsten metal terminal having a tip portion screwed into the counterbore hole was screwed, and the tip surface thereof was brought into contact with the lower end surface of the tungsten disk. The heater electrode was exposed by opening a screw hole from the lower surface side, and then connected by screwing a metal terminal made of tungsten into the screw hole.
  • a cylindrical support portion was attached to the lower surface portion of the wafer holder produced in this manner, and was placed in a vacuum chamber of a semiconductor manufacturing apparatus. Moreover, it connected to the metal terminal which protruded from the lower surface of the wafer holder through the conductive wire inside this cylindrical support part. Then, the wafer holding body is heated to 550 ° C. by supplying power to the heater electrode conductive wire in a vacuum atmosphere, and then maintained at 550 ° C. from the RF electrode conductive wire by an AC voltage of 1600 W, 13.56 MHz. ON (60 seconds) / OFF (30 seconds) was repeated 10,000 times. As a result, it was possible to operate well without causing troubles such as overheating and cracking.

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Abstract

ウェハ載置面を上面側に備えた円板形状のセラミックス製の基体と、基体の内部に埋設された例えばＲＦ電極と、基体の下面側から挿入された金属端子と、これらＲＦ電極と金属端子とを互いに電気的に導通させる接続端子とを有するウェハ保持体であって、接続端子は、基体と同一材質の好適には切頭円錐形状のセラミックス部材と、前記セラミックス部材の表面を覆う金属層とからなり、金属層の上端部はＲＦ電極に接続しており、金属層の下端部は金属端子に金属部材を介して接続している。

Description

ウェハ保持体
  本発明は、ウェハ保持体に関する。
　本出願は、２０１５年７月１３日出願の日本出願第２０１５－１３９７３８号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものとする。
  特許文献１には、加熱用のヒータ電極などに対応する導電性部材が埋め込まれたセラミックス部材を備えたサセプタが開示されている。
  また、特許文献２には、電気回路を内部に有する円板状のセラミックス基材の下面側にネジ穴を設けて該電気回路を露出させ、このネジ穴に金属端子（アンカー部材）をねじ込んでその一端部を電気回路に接続すると共に、その他端部を給電用導電部材に接続したセラミックス製のサセプタが提案されている。
  さらに特許文献３には、セラミックス製のウェハ保持体中に埋設された電極に対して、ウェハ保持体の下面側から挿入した金属端子を接続端子を介して接続させる技術が開示されている。
特開平１０－２７３３７１号公報 特開２００３－０８６６６３号公報 特開２００８－３０５９６８号公報
  本開示が提供するウェハ保持体は、ウェハ載置面を上面側に備えた円板形状のセラミックス製の基体と、前記基体の内部に埋設された電極と、前記基体の下面側から挿入された金属端子と、これら電極と金属端子とを互いに電気的に導通させる接続端子とを有するウェハ保持体であって、前記接続端子は、前記基体と同一材質のセラミックス部材と、前記セラミックス部材の表面を覆う金属層とからなり、前記金属層の上端部は前記電極に接続しており、前記金属層の下端部は前記金属端子に金属部材を介して接続している。
本発明に係るウェハ保持体の第１の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第２の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第３の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第３の別の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第３の別の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第３の別の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第４の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第４の別の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第４の別の具体例を示す模式的な部分縦断面図である。 本発明に係るウェハ保持体の第４の別の具体例を示す模式的な部分縦断面図である。
 ［本開示が解決しようとする課題］
  近年の電子機器の高性能化に伴い、半導体デバイスの製造工程ではよりいっそう高い温度で成膜処理を行うことや、ＲＦ電極への印加電圧を高めて効率よくプラズマによる成膜を行うことが求められている。そのため、上記したようなウェハ保持体において、埋設されたヒータ電極やＲＦ電極に対して熱膨張差による破損等の問題を生ずることなく従来よりも確実に給電できる構造が求められている。
  本発明は、このような状況に鑑みてなされたものであり、ヒータ回路やＲＦ電極などを内部に有するセラミックス製のウェハ保持体において、これらヒータ回路やＲＦ電極などに対して外部から確実に給電できるうえ、当該給電部分において熱膨張差による破損が生じにくい信頼性の高いウェハ保持体を提供することを目的としている。
［本開示の効果］
  本発明によれば、セラミックス製基体の内部に埋設されている電極に対して、熱膨張差による破損を生じさせることなく確実に給電することができる。
［本願発明の実施形態の説明］
  最初に本発明の実施形態を列記して説明する。本発明の実施形態のウェハ保持体は、ウェハ載置面を上面側に備えた円板形状のセラミックス製の基体と、前記基体の内部に埋設された電極と、前記基体の下面側から挿入された金属端子と、これら電極と金属端子とを互いに電気的に導通させる接続端子とを有するウェハ保持体であって、前記接続端子は、前記基体と同一材質のセラミックス部材と、前記セラミックス部材の表面を覆う金属層とからなり、前記金属層の上端部は前記電極に接続しており、前記金属層の下端部は前記金属端子に金属部材を介して接続している。これにより、セラミックス製基体の内部に埋設されている電極に対して、熱膨張差による破損を生じさせることなく確実に給電することが可能になる。また、前記セラミックス部材の表面は全面に亘って金属層に覆われていることが電気抵抗を小さくする上で好ましい。なお、ここで円板形状とは厳密な真円に限定されず、長軸と短軸とで表される楕円形状やそれに近い形状も含まれる。
  本発明の実施形態のウェハ保持体は、前記金属端子が前記基体に螺合する構造でもよいし、前記金属端子が前記金属部材に螺合する構造でもよい。前者の構造の場合は簡易な構造で確実に金属端子を固定することができる。一方、後者の場合は金属端子と金属部材との接触面積が増えるのでよりいっそう低抵抗を実現することが可能になる。
  本発明の実施形態のウェハ保持体は、前記接続端子のセラミックス部材が切頭円錐形状を有しているのが好ましい。これにより、ウェハ保持体の作製の際に、容易に接続端子を基板に隙間無く密着させることが可能になる。また、接続端子がウェハ載置面側に向って移動するのを防ぐことができるので、セラミックス製の基体のうち、該接続端子を介して給電される電極よりも上側に位置する部分が当該接続端子によって押圧されて割れや反りなどのトラブルを生じるのを防ぐことができる。
  本発明の実施形態のウェハ保持体は、前記電極が、ＲＦプラズマ形成用電極、ヒータ電極、又は静電チャック用電極であってもよい。電極がこれらのいずれであっても上記した各種の効果を得ることができる。
  次に、図１を参照しながら本発明の第１の具体例のウェハ保持体１０について説明する。この本発明の第１の具体例のウェハ保持体１０は、処理対象物である半導体ウェハ（図示せず）が載置されるウェハ載置面１１ａを上面側に備えた円板形状の基体１１と、この基体１１の内部に埋設されたＲＦ電極１２と、基体１１の下面側から挿入された金属端子１３と、これらＲＦ電極１２と金属端子１３とを互いに電気的に導通させる接続端子１４とを有している。
  各構成要素について具体的に説明すると、基体１１は一般に筒状の支持部材によって下から水平に支持される部材であり、この基体１１の材質には、窒化アルミニウム、窒化珪素、炭化珪素、又は酸化アルミニウムなどの剛性及び熱伝導性に優れたセラミックスを用いるのが好ましく、窒化アルミニウムがより好ましい。
  この基体１１の内部に、成膜時にウェハ載置面１１ａの上方をプラズマ雰囲気にするためのＲＦ電極１２がウェハ載置面１１ａと平行な面上に埋設されている。このＲＦ電極１２に給電を行うか若しくは接地させるため、基体１１の下面側には金属端子１３が下端部を突出させた状態で挿入されている。金属端子１３は少なくとも上端部の外側が螺刻されており、この金属端子１３がねじ込まれる基体１１のネジ穴に螺合している。この突出する金属端子１３の下端部に図示しない導電線が接続される。基体１１の内部には更にウェハ載置面１１ａに載置された半導体ウェハを加熱するためのヒータ電極１５がＲＦ電極１２よりも下側に離間して埋設されている。このヒータ電極１５への給電はＲＦ電極１２と同様の構造でもよいし一般的な端子構造でもよいので説明は省略する。
  基体１１の内部には、更に基体１１と同一材質からなる切頭円錐形状のセラミックス部材１４ａと、その側面を全面に亘って覆う金属層１４ｂとからなる接続端子１４が埋設されている。この接続端子１４は、その中心軸を基体１１の厚み方向に向けた状態で埋設されており、先細の先端部側端面がＲＦ電極１２の下側に当接すると共に、その反対側の下端部側端面が円板状の金属部材１６を介して金属端子１３の上端面に当接している。
  このように、セラミックス部材１４ａを基体１１と同一の材質で形成することで、幅広い温度範囲に亘って熱膨張差がほとんど生じないので接続端子１４とその周辺部との間で熱応力が生じにくく、基体１１の板厚が薄いウェハ保持体であってもクラックなどの破損が生じにくくなる。なお、セラミックス部材１４ａの形状は、円柱状、角柱状、中間部が縮径若しくは拡径された柱状、切頭角錐形状等でもよいが、より信頼性の高い接続端子構造を簡易に作製できる点において上記した切頭円錐形状が最も好ましい。
  上記した金属層１４ｂ及び金属部材１６の材質並びに前述したＲＦ電極１２及びヒータ電極１５の材質は不可避不純物を除いて、タングステン（Ｗ）、モリブデン（Ｍｏ）、又はこれらの合金が好ましい。これら金属はいずれも基体１１を形成するセラミックスとの熱膨張係数の差が比較的小さく、ウェハ保持体が反ったりクラックが入ったりする不良の発生を抑制することができるからである。また、金属端子１３の材質は不可避不純物を除いて、タングステン、モリブデン、及びこれらの合金、ニッケル、コバール、銅－タングステン合金、銅－モリブデン合金、銅－ニッケル－鉄－タングステン合金からなる群から選ばれた少なくとも１種が好ましい。
  上記した接続端子１４の下端部側端面に当接する円板状の金属部材１６は、その外径が当該接続端子１４の下端部側端面の外径よりも大きいものを用いる。これにより、接続端子１４の金属層１４ｂは、その環状の上端部が全周に亘ってＲＦ電極１２に当接すると共に、その環状の下端部も全周に亘って金属部材１６に当接することができる。よって、従来の給電端子よりも金属端子１３の上端部とＲＦ電極１２とを確実に導通させることが可能になり、給電の際にジュール熱の局所的な発生などのトラブルが生じにくくなる。なお、金属部材１６の形状は金属層１４ｂの環状の下端部が全周に亘って当接できるのであれば円板状に限定されるものではなく、多角形の板状部材や環状部材等であってもよい。
  上記したウェハ保持体は、例えば下記の方法で作製することができる。すなわち、先ず同じ材質で且つ同じ外径を有する３枚のセラミックス製基板を用意し、その内の１枚の基板に対して上記した接続端子１４が埋設される位置に貫通孔を設ける。この貫通孔はウェハ載置面１１ａ側に向かって徐々に内径が小さくなるようなテーパー構造にする。そして、この貫通孔に嵌合するテーパー構造を有し且つ上記セラミックス製基板と同じ材質の切頭円錐形状のセラミックス部材を用意し、その側面を全周に亘って略同じ肉厚の金属層で覆う。
  セラミックス部材の側面を金属層で覆う方法としては、例えばタングステンペーストを塗布して焼成するメタライズ法によって厚み１０～５０μｍ程度のタングステン層を被覆させてもよいし、セラミックス部材の側面に装着可能な肉厚５０μｍ～２ｍｍ程度のタングステン製のスリーブ状部材を別途作製し、これをセラミックス部材の側面に装着させてもよい。この金属層で覆われたセラミックス部材を基板の貫通孔に挿入して、より確実に基板に密着させることにより、金属層で覆われたセラミックス部材の周辺部に隙間がほとんど存在しなくなるのでプラズマの進入を防ぐことができる。
  セラミックス製基板の表裏面にはそれぞれ金属層の上端部及び下端部が環状に露出している。セラミックス製基板の表裏面にＲＦ電極及びヒータ電極を形成すべく例えばタングステンペーストのパターニング層をスクリーン印刷法により塗布する。塗布後はパターニング層を乾燥させてから８００℃程度の窒素雰囲気中で脱脂し、残りの２枚の基板をそれぞれ表裏面に重ね合わせて１８００℃程度の窒素雰囲気中でホットプレスを行う。これにより、３枚のセラミックス製基板が一体化された円板状の結合体が得られる。
  次に、この円板状結合体の下面側からセラミックス部材に向かって金属端子が嵌合する大きさの内径を有するザグリ穴を形成し、セラミックス部材の下端部をその側面を覆う金属層と共に露出させる。そして、この露出した金属層及びセラミックス部材の下端部にロウ付けや好適にはタングステンによるメタライズにより金属部材を接合させる。更に、このザグリ穴に先端部が螺刻された金属端子をねじ込みながらその先端面を金属部材の下端面に当接させる。これによりウェハ保持体が完成する。
  次に、本発明の第２の具体例のウェハ保持体について説明する。図２に示すように、この本発明の第２の具体例のウェハ保持体２０は、金属端子２３と基体２１とが互いに螺合されておらず、代わりに金属端子２３と金属部材２６とが互いに螺合していることを特徴としており、それ以外は基本的には上記した本発明の第１の具体例のウェハ保持体１０と同様の構造を有している。
  具体的には、ウェハ載置面２１ａを上面側に備えた円板形状の例えば窒化アルミニウム製の基体２１と、この基体２１の内部に埋設されたＲＦ電極２２と、基体２１の下面側から挿入された金属端子２３と、これらＲＦ電極２２と金属端子２３とを互いに電気的に導通させる接続端子２４と、ＲＦ電極２２よりも下側に離間して埋設されたヒータ電極２５とを有している。接続端子２４は、基体２１と同一材質からなる切頭円錐形状のセラミックス部材２４ａと、その側面を全面に亘って覆う金属層２４ｂとからなり、その先細の先端部側端面がＲＦ電極２２の下側に当接すると共に、その反対側の下端部側端面が円板状の金属部材２６を介して金属端子２３の上端面に電気的に接続している。
  これら金属端子２３と金属部材２６との螺合は、図２に示すように金属部材２６の下面に下方に向って突出する雄ネジ部を設けると共に、これに螺合する雌ネジを金属部材２６の先端部に設けてもよいし、これとは逆に金属部材の先端部に上方に突出する雄ネジ部を設けると共に、これに螺合する雌ネジを金属部材の下面側に設けてもよい。いずれの場合であっても金属端子と金属部材との接触面積が増えるのでより低抵抗を実現することが可能になる。
  次に、本発明の第３の具体例のウェハ保持体について説明する。図３Aに示すように、この本発明の第３の具体例のウェハ保持体３０は、金属端子３３が挿入される基体３１のネジ穴に段差を設けることによって該ネジ穴の内径が開口部側において部分的に大きくなっており、この大径部分に金属端子３３を囲むように筒状の封止部材３７が外装されている。そして、この封止部材３７の環状の先端部と上記したネジ穴の段差との間がガラス３８で封止されている。これにより、金属端子３３と基体３１との螺合部に大気や雰囲気ガスが侵入して腐食などの悪影響を及ぼすのを防ぐことができる。
  本発明の第３の具体例のウェハ保持体は、上記した筒状の封止部材３７及びガラス３８以外は基本的には上記した本発明の第１の具体例のウェハ保持体１０と同様の構造を有している。具体的には、ウェハ載置面３１ａを上面側に備えた円板形状の例えば窒化アルミニウム製の基体３１と、この基体３１の内部に埋設されたＲＦ電極３２と、基体３１の下面側から挿入された金属端子３３と、これらＲＦ電極３２と金属端子３３とを互いに電気的に導通させる接続端子３４と、ＲＦ電極３２よりも下側に離間して埋設されたヒータ電極３５とを有している。接続端子３４は、基体３１と同一材質からなる切頭円錐形状のセラミックス部材３４ａと、その側面を全面に亘って覆う金属層３４ｂとからなり、その先細の先端部側端面がＲＦ電極３２の下側に当接すると共に、その反対側の下端部側端面が円板状の金属部材３６を介して金属端子３３の上端面に電気的に接続している。
  この筒状の封止部材及びガラスによる封止は、図３Bに示すように上記した第２の具体例のウェハ保持体１３０の給電端子構造に適用してもよい。また、図３Cのウェハ保持体２３０に示すように、金属端子２３３において基体２３１のネジ穴の段差部の位置にフランジ部２３３ａを形成し、このフランジ部２３３ａの下面側とネジ穴の段差面とに筒状の封止部材３７の先端面を対向させて、この対向部分にガラス３８を充填してもよい。この場合は、ガラス３８によるシール面が筒状の封止部材３７の押圧方向に対して垂直となるので、より確実にシールすることが可能になる。
  このように金属端子にフランジ部を形成して封止する場合は、上記した第２の具体例の給電端子構造に適用するのが特に好ましい。その理由は、第２の具体例に適用した図３Dのウェハ保持体３３０と前述した図３Cのウェハ保持体２３０とを比較して分かるように、ウェハ保持体３３０の方が基体固定される金属端子３３３の先端部とそのフランジ部３３３ａとの離間距離Ｌ２を、ウェハ保持体２３０の場合の離間距離Ｌ１よりも短くできるので、材質の異なる基体と金属端子との間の熱膨張差の影響をより少なくできるからである。
  次に、本発明の第４の具体例のウェハ保持体について説明する。図４Aに示すように、この本発明の第４の具体例のウェハ保持体４０は、金属端子４３に外嵌される筒状の封止部材４７の上部に該封止部材４７と略同径の環状部材４９が設けられている。そして、これら封止部材４７と環状部材４９との間にガラス４８が充填されており、環状部材４９とネジ穴の段差部との間にはガラスが充填されていないことを特徴としている。
  本発明の第４の具体例のウェハ保持体は、上記した筒状の封止部材４７、環状部材４９及びガラス４８以外は基本的には上記した本発明の第１の具体例のウェハ保持体１０と同様の構造を有している。具体的には、ウェハ載置面４１ａを上面側に備えた円板形状の例えば窒化アルミニウム製の基体４１と、この基体４１の内部に埋設されたＲＦ電極４２と、基体４１の下面側から挿入された金属端子４３と、これらＲＦ電極４２と金属端子４３とを互いに電気的に導通させる接続端子４４と、ＲＦ電極４２よりも下側に離間して埋設されたヒータ電極４５とを有している。接続端子４４は、基体４１と同一材質からなる切頭円錐形状のセラミックス部材４４ａと、その側面を全面に亘って覆う金属層４４ｂとからなり、その先細の先端部側端面がＲＦ電極４２の下側に当接すると共に、その反対側の下端部側端面が円板状の金属部材４６を介して金属端子４３の上端面に電気的に接続している。
  セラミックス基板のネジ穴の段差部のような隅部Ａにガラスを充填した場合は、当該隅部のガラスには応力が集中して割れが発生するおそれがあるが、上記したように封止部材と環状部材との間にガラスを充填することによって隅部Ａにガラスを充填する必要がなくなるので、より確実に封止することが可能になる。この場合は、ネジ穴の段差部の隅部Ａをなめらかな曲面で形成することがより好ましい。なお、図４B～図４Dのウェハ保持体１４０、２４０及び３４０は、上記した第３の具体例の図３B～図３Dのウェハ保持体１３０、２３０及び３３０にそれぞれ対応しており、それぞれ上記した本発明の第３の具体例の効果に加えてこの２分割した封止部材の効果が得られる。
  以上、本発明のウェハ保持体について複数の具体例を挙げて説明したが、本発明はこれら具体例に限定されるものではなく、本発明の主旨から逸脱しない範囲の種々の態様で実施可能である。例えば、上記した具体例のウェハ保持体は、内部に埋設されている電極（埋設電極）が、プラズマ形成用のＲＦ電極及びヒータ電極であったが、これら電極のいずれかに代えて若しくはこれら電極の少なくともいずれかに加えて静電チャック用電極が埋設されていてもよく、これら電極の少なくともいずれかに上記した給電端子構造を適用してもよい。
  本発明の効果を確認するため、図１に示すような本発明の第１の具体例のウェハ保持体を作製して運転を行った。具体的には、先ず外径３３０ｍｍで厚みがそれぞれ９ｍｍ、５ｍｍ、及び９ｍｍの３枚の窒化アルミニウム（ＡｌＮ）製の円板を用意した。これら３枚のうち、厚み９ｍｍの１枚のセラミックス基板に平均内径４ｍｍのテーパー状の貫通孔を設け、このテーパー角と同じテーパー角を有する窒化アルミニウム製の切頭円錐体を用意した。この切頭円錐体の側面にタングステンペーストを塗布した後、焼成して厚み０.０３ｍｍの金属層を設けた。
  この側面がメタライズされた切頭円錐体を上記したセラミックス基板の貫通孔に嵌め込んで固定した。セラミックス基板の表裏面に、それぞれＲＦ電極用及びヒータ電極用のタングステンペーストのパターニング層をスクリーン印刷により塗布した後、焼成して電極を形成した。この表裏面に電極が形成されたセラミックス基板のＲＦ電極側に前述した５ｍｍのセラミックス基板を重ね合わせ、反対側のヒータ電極側には９ｍｍのセラミックス基板を重ね合わせた。この状態でホットプレスして３枚のセラミックス基板を一体化させた。
  次に、この一体化した基板の下面側から切頭円錐体に向かってザグリ穴を機械加工で形成し、切頭円錐体の下端部をその側面の金属層と共に露出させた。そして、この露出した金属層及び切頭円錐体の下端部にタングステンのペーストを用いて外径５.０ｍｍ、厚み１ｍｍのタングステン製円板を接合させた。そして、このザグリ穴に先端部が螺刻されたタングステン製の金属端子を螺合させながらその先端面をタングステン製円板の下端面に当接させた。なお、ヒータ電極は下面側からネジ穴をあけて露出させた後、このネジ穴にタングステン製の金属端子をねじ込むことで接続させた。
  このようにして作製したウェハ保持体の下面部に筒状の支持部を取り付け、半導体製造装置の真空チャンバー内に設置した。また、この筒状支持部の内側に導電線を通してウェハ保持体の下面から突出している金属端子に接続した。そして、真空雰囲気でヒータ電極用の導電線に給電してウェハ保持体を５５０℃まで昇温させた後、５５０℃を維持しながらＲＦ電極用の導電線から１６００Ｗ、１３.５６ＭＨｚの交流電圧によるＯＮ（６０秒）／ＯＦＦ（３０秒）を１万回繰り返した。その結果、過熱や割れなどのトラブルが生じることなく良好に運転することができた。
  １０、２０、３０、４０    ウェハ保持体
  １１、２１、３１、４１    基体
  １１ａ、２１ａ、３１ａ、４１ａ    ウェハ載置面
  １２、２２、３２、４２    ＲＦ電極
  １３、２３、３３、４３    金属端子
  １４、２４、３４、４４    接続端子
  １４ａ、２４ａ、３４ａ、４４ａ    セラミックス部材
  １４ｂ、２４ｂ、３４ｂ、４４ｂ    金属層
  １５、２５、３５、４５    ヒータ電極
  １６、２６、３６、４６    金属部材
  ３７、４７    封止部材
  ３８、４８    ガラス
  ４９    環状部材
  １３０、２３０、３３０    ウェハ保持体
  １４０、２４０、３４０    ウェハ保持体
  ２３３、３３３    金属端子
  ２３３ａ、３３３ａ    フランジ部
  Ａ    隅部
 

Claims (4)

  1.   ウェハ載置面を上面側に備えた円板形状のセラミックス製の基体と、前記基体の内部に埋設された電極と、前記基体の下面側から挿入された金属端子と、これら電極と金属端子とを互いに電気的に導通させる接続端子とを有するウェハ保持体であって、
      前記接続端子は、前記基体と同一材質のセラミックス部材と、前記セラミックス部材の表面を覆う金属層とからなり、前記金属層の上端部は前記電極に接続しており、前記金属層の下端部は前記金属端子に金属部材を介して接続しているウェハ保持体。
  2.   前記金属端子が前記基体又は前記金属部材に螺合している、請求項１に記載のウェハ保持体。
  3.   前記セラミックス部材が切頭円錐形状を有している、請求項１又は請求項２に記載のウェハ保持体。
  4.   前記電極が、ＲＦプラズマ形成用電極、ヒータ電極、又は静電チャック用電極である、請求項１～請求項３のいずれか１項に記載のウェハ保持体。
     
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