WO2018100903A1 - ウエハ保持体 - Google Patents

ウエハ保持体 Download PDF

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Publication number
WO2018100903A1
WO2018100903A1 PCT/JP2017/037468 JP2017037468W WO2018100903A1 WO 2018100903 A1 WO2018100903 A1 WO 2018100903A1 JP 2017037468 W JP2017037468 W JP 2017037468W WO 2018100903 A1 WO2018100903 A1 WO 2018100903A1
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WO
WIPO (PCT)
Prior art keywords
mounting table
cylindrical member
wafer
temperature sensor
surface side
Prior art date
Application number
PCT/JP2017/037468
Other languages
English (en)
French (fr)
Inventor
木村　功一
晃 三雲
Original Assignee
住友電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to KR1020187024763A priority Critical patent/KR102406136B1/ko
Priority to JP2018553702A priority patent/JP6886128B2/ja
Priority to US16/078,601 priority patent/US11127605B2/en
Publication of WO2018100903A1 publication Critical patent/WO2018100903A1/ja
Priority to US17/401,333 priority patent/US12046488B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2065—Temperature variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Definitions

  • the present disclosure relates to a wafer holder.
  • This application claims the priority based on the Japanese application 2016-230806 of an application on November 29, 2016, and uses all the content described in the said Japanese application.
  • the wafer heater includes, for example, a wafer mounting table made of a ceramic disk-shaped member having a flat wafer mounting surface on the upper surface as shown in Patent Document 1, and a cylindrical shape that supports the wafer mounting table from the lower surface side.
  • the semiconductor wafer is heated by a resistance heating element embedded in the wafer mounting table.
  • a high frequency (RF) electrode for generating plasma and an electrostatic chuck (ESC) electrode for electrically attracting and fixing a semiconductor wafer to the wafer mounting surface may be provided inside the wafer mounting table.
  • a mounting table having a mounting surface of the workpiece on the upper surface, a support member for supporting the mounting table from the lower surface side, and a first tubular member having one end airtightly joined to the lower surface side of the mounting table; And a second cylindrical member disposed on the inner side of the first cylindrical member and having one end airtightly joined to the lower surface side of the mounting table.
  • FIG. 1 is a schematic longitudinal sectional view of a wafer heater as a specific example of a wafer holder according to the present disclosure.
  • 2A is a partial cross-sectional view showing a first form of a hermetic joint portion of the first cylindrical member and the second cylindrical member of the wafer heater of FIG.
  • FIG. 2B is a partial cross-sectional view showing a second form of the hermetic joining portion of the first cylindrical member and the second cylindrical member of the wafer heater of FIG.
  • FIG. 2C is a partial cross-sectional view showing a third form of the hermetic joining portion of the first tubular member and the second tubular member of the wafer heater of FIG.
  • 2D is a partial cross-sectional view showing a fourth form of the hermetic joint portion of the first cylindrical member and the second cylindrical member of the wafer heater of FIG.
  • the wafer mounting table of the wafer heater has an electrode such as a resistance heating element inside, a terminal portion for supplying power to this is provided on the lower surface side of the wafer mounting table.
  • a temperature sensor such as a thermocouple may be attached to the wafer mounting table, and in this case, the terminal portion is provided on the lower surface side. Since these terminal portions are heated to about 600 ° C. together with the wafer mounting table during the processing of the semiconductor wafer, they are protected from corrosive gases such as halogen gas introduced into the chamber as reactive gases used for CVD and etching. It will be necessary.
  • the terminal portion of the electrode provided on the resistance heating element or the like and the lead wire connected thereto are accommodated inside the cylindrical member, and both end portions of the cylindrical member are respectively connected to the bottom surface of the wafer mounting table and the floor surface of the chamber. It is conceivable to provide an airtight seal.
  • the temperature and temperature of the wafer mounting table are generally repeated, the bonded portion between the cylindrical member and the wafer mounting table may be damaged by this heat cycle. Further, when the maintenance is performed, a lateral external stress is applied to the cylindrical member, and the joint portion may be damaged.
  • the wafer mounting table may be provided with a coolant circulation path for cooling inside, or a groove for vacuum suction of the semiconductor wafer mounted on the wafer mounting surface may be provided on the wafer mounting surface.
  • a flow path for supplying and discharging the refrigerant and in the latter case, a flow path communicating with the groove is provided on the lower surface side of the wafer mounting table.
  • These flow paths also need to be hermetically sealed to the wafer mounting table so as not to leak, but may be damaged by stress such as the heat cycle described above.
  • a cylindrical member provided on the mounting table Provide a structure that is resistant to breakage even when subjected to stress such as heat cycle.
  • the wafer holder according to the present disclosure includes a mounting table having a mounting surface for a workpiece on the upper surface, a support member for supporting the mounting table from the lower surface side, and one end portion hermetically bonded to the lower surface side of the mounting table.
  • the wafer holder may have an electrode that is at least partially embedded in the mounting table, and the electrode may be housed inside the second cylindrical member. Further, the wafer holder has a temperature sensor at least partially embedded in the mounting table, and a lead line drawn from the temperature sensor, and the temperature sensor and the lead line are the second cylindrical member. It may be accommodated inside. Further, the above wafer holder has an electrode at least partially embedded in the mounting table, a temperature sensor at least partially embedded in the mounting table, and a lead wire drawn from the temperature sensor. The electrode, the temperature sensor, and the lead wire may be accommodated inside the second cylindrical member. Thereby, an electrode, a temperature sensor, and its leader can be isolated from a corrosive atmosphere.
  • the mounting table may have a flow path inside
  • the mounting surface may have a groove
  • the inside of the second cylindrical member may be configured as a flow path or a flow path communicating with the groove.
  • the mounting table has a ceramic disk shape for mounting a semiconductor wafer, and may further include a resistance heating element embedded in the mounting table.
  • the reliability of the semiconductor manufacturing apparatus on which the wafer holder is mounted can be improved.
  • the “disc shape” is not intended to be a graphically accurate disc, but is intended to be a configuration that is recognized as a disc as an appearance. Hereinafter, it may be described as “substantially disk-like” in the same meaning.
  • a semiconductor manufacturing apparatus 100 shown in FIG. 1 mainly includes a chamber 1 in which a thin film process such as an etching process or a CVD process is performed on a semiconductor wafer 30, and a wafer heater 2 mounted therein.
  • the heater 2 has a wafer mounting surface 21a on the upper surface, preferably a substantially disk-shaped wafer mounting table 21 made of ceramics, and a substantially cylindrical support member preferably made of ceramics that supports the wafer mounting table 21 from the lower surface. 22.
  • the ceramic that is a suitable material for the wafer mounting table 21 and the support member 22 include aluminum nitride, silicon nitride, silicon carbide, and aluminum oxide.
  • a resistance heating element 21b having a predetermined circuit pattern is embedded in parallel to the wafer mounting surface 21a.
  • a pattern obtained by patterning a metal foil such as a stainless steel foil, a paste formed by screen printing and baking containing a metal powder such as tungsten, or a molybdenum coil may be used.
  • a thermocouple 21 c is further provided inside the wafer mounting table 21. A part of the thermocouple 21 c protrudes from the lower surface side of the wafer mounting table 21 inside the support member 22. It should be noted that electrodes (not shown) connected to both ends of the resistance heating element 21 b similarly protrude from the lower surface side of the wafer mounting table 21 inside the support member 22.
  • thermocouple 21c One end of a lead wire 23 is connected to the thermocouple 21c.
  • the lead wire 23 extends from the inner side of the support member 22 to the lower end, and passes through the through hole 1a provided in the bottom surface of the chamber 1 to form the chamber 1.
  • Both end portions of the support member 22 have a flange shape bent outward, and at the upper end portion of the support member 22, the upper end surface of the flange shape and the lower surface of the wafer mounting table 21 may be joined by sintering, You may join to the lower surface of the wafer mounting base 21 with coupling
  • the lower end portion of the support member 22 may be joined to the bottom surface of the chamber 1 in the same manner as the upper end portion described above, but it is preferable that the lower end portion is detachably coupled by a coupling means such as a clamp.
  • the upper end portion of the second cylindrical member 24 is airtightly joined to the lower surface side of the wafer mounting table 21.
  • the lower end portion of the second cylindrical member 24 protrudes from the lower portion of the chamber 1 through the through hole 1a.
  • An inner diameter of about 6 to 30 mm and a thickness of 0.5 to 5 mm, preferably formed of ceramic, are preferably formed on the connection portion of the second cylindrical member 24 with the wafer mounting table 21 (outside of the second cylindrical member 24).
  • a first cylindrical member 25 having a length of about 1 to 30 mm is disposed.
  • the first tubular member 25 is configured to be shorter than the second tubular member 24.
  • An upper end portion that is one end portion of the first cylindrical member 25 is airtightly bonded to the lower surface side of the wafer mounting table 21. That is, the wafer heater 2 includes a second cylindrical member 24 that is disposed inside the first cylindrical member 25 and that has one end airtightly joined to the lower surface side of the mounting table.
  • the upper end portion of the second cylindrical member 24 and the upper end portion of the first cylindrical member 25 are sealed with a sealing function such as glass as shown in FIGS. 2A to 2D (first to fourth embodiments). It is preferable to join the lower surface side of the wafer mounting table 21 with the stopper 26. In joining with the sealing material 26, as shown in FIG. 2A (first embodiment), the upper ends of the second cylindrical member 24 and the first cylindrical member 25 are preferably aligned as they are on the lower surface of the wafer mounting table 21. You may join in the state. Further, as shown in FIGS. 2B to 2D, an annular groove is provided on the lower surface of the wafer mounting table 21, and the upper end portion of at least one of the second cylindrical member 24 and the first cylindrical member 25 is fitted therein. Good.
  • the structure shown in FIG. 2A can suppress the manufacturing cost because no groove is formed on the lower surface of the wafer mounting table 21.
  • the structure shown in FIG. 2B (second embodiment) and FIG. 2C (third embodiment) is preferable.
  • the structure shown to FIG. 2B is a case where only the 2nd cylindrical member 24 is engage
  • the structure shown in FIG. 2C is a case where only the first tubular member 25 is fitted into the groove.
  • the structure shown in FIG. 2D (fourth embodiment) is a case where both the second tubular member 24 and the first tubular member 25 are fitted into the groove.
  • the second tubular member 24 and the first tubular member 25 are fitted in the groove, the second tubular member 24 is inserted deeper than the first tubular member 25 into the groove as shown in FIG. 2D.
  • the present invention is not limited to the case, and vice versa, or both tip portions may be inserted at the same depth.
  • thermocouple 21c and the electric wire as the lead wire 23 are accommodated inside the second cylindrical member 24 .
  • the resistance heating element 21 b embedded in the wafer mounting table 21, the electrodes provided in the RF circuit, the ESC circuit, and the like and the power supply line thereof may be accommodated inside the second cylindrical member 24.
  • the inner space of the second cylindrical member 24 may be used as a flow path communicating with the coolant circulation path or the suction chuck groove provided in the wafer placement table 21 or on the wafer placement surface 21a.
  • the second cylindrical member 24 whose joint portion is reinforced by the first cylindrical member 25 may be provided not only inside the support member 22 but also outside the support member 22.
  • both ends of the support member 22 may be sealed airtight, and the inside of the support member 22 may be isolated from the outside of the support member 22 that becomes a corrosive atmosphere.
  • the inside of the support member 22 may be an inert gas atmosphere.
  • the inert gas is not particularly limited as long as it does not cause a reaction that deteriorates constituent materials such as electrodes.
  • a rare gas such as He, Ne, Ar, Kr, Xe, or Rn, N 2 gas, or the like can be used.
  • N 2 and Ar are preferable from the viewpoint of cost and the like.
  • a slurry was prepared by adding 0.5 parts by mass of yttrium oxide as a sintering aid to 99.5 parts by mass of the aluminum nitride powder, adding a binder and an organic solvent, and mixing them with a ball mill.
  • the obtained slurry was sprayed by a spray drying method to produce granules, which were press-molded to produce two compacts having the same shape.
  • These compacts were degreased at 700 ° C. in a nitrogen atmosphere and then sintered at 1850 ° C. in a nitrogen atmosphere to obtain two aluminum nitride sintered bodies.
  • the obtained sintered body was processed into a disk shape having a diameter of 330 mm and a thickness of 8 mm. At this time, the surface roughness Ra was 0.8 ⁇ m, and the flatness was 50 ⁇ m.
  • a W (tungsten) paste is applied by screen printing to form a resistance heating element on one surface of one of the sintered bodies so that the line width is 4 mm, and then nitrogen is added. After degreasing at 700 ° C. in an atmosphere, firing was performed at 1830 ° C. in a nitrogen atmosphere. Thus, a resistance heating element having a substantially concentric circuit pattern was formed. Next, degreasing was performed after applying an adhesive material mainly composed of aluminum nitride for bonding to one surface of the other aluminum nitride sintered body. These two aluminum nitride sintered bodies were overlapped and joined so as to cover the resistance heating element. Two holes that reach the both ends of the resistance heating element are counterbored on one side of the joined body thus obtained, and each hole is made of W (tungsten) so as to contact the end of the resistance heating element. An electrode was inserted.
  • thermocouple hole was counterbored on the same side of the joined body, and a thermocouple 21c was attached. Moreover, the annular groove for insertion of the upper end part of the 2nd cylindrical member 24 mentioned later and the 1st cylindrical member 25 was counterbored so that the counterbore hole for this thermocouple might be enclosed. A step is provided at the bottom of the hole of the annular groove so that the groove depth of the second cylindrical member 24 is 5 mm and the groove depth of the first cylindrical member 25 is 3 mm.
  • One end of the support member 22 was joined with a screw. Note that an O-ring was used to hermetically seal between the flange portion and the bonding surface of the wafer mounting table. Then, a feeder line was connected to the electrode protruding from the lower surface of the wafer mounting table 21 inside the support member.
  • the wafer mounting table 21 to which one end of the support member 22 is bonded is mounted in the chamber of the CVD apparatus, and the other end of the support member 22 is fixed to the bottom of the chamber with an O-ring with a clamp. did. Further, as shown in FIGS. 1 and 2D, the upper end portion of the second cylindrical member 24 made of ceramic having an outer diameter of 10 mm, a thickness of 2 mm, and a length of 175 mm for accommodating the thermocouple 21c and the lead wire 23 is placed on the wafer. It was made to fit in the annular groove on the lower surface side of the mounting table 21.
  • a ceramic first cylindrical member 25 having an outer diameter of 14 mm, a wall thickness of 2 mm, and a length of 8 mm is disposed on the upper portion of the second cylindrical member 24, and an upper end portion of the first cylindrical member 25 is an annular groove on the lower surface side of the wafer mounting table 21. Inserted. That is, the second cylindrical member 24 is disposed inside the first cylindrical member 25.
  • the wafer heating of the sample 2 was performed in the same manner as the sample 1 except that the thermocouple 21c and the lead wire 23 were accommodated using only the second cylindrical member 24 without using the first cylindrical member 25.
  • a heater was manufactured. Heat that raises and lowers the temperature of the wafer mounting table 21 between room temperature and 500 ° C. by supplying power to the resistance heating element or stopping the supply to each of the wafer heaters 2 of the samples 1 and 2. The cycle was repeated 10 cycles. As a result, in Sample 1, an airtight seal was secured between the second cylindrical member 24 and the lower surface side of the wafer mounting table 21. In Sample 2, the second cylindrical member 24 and the lower surface side of the wafer mounting table 21 were secured. A leak occurred between.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)

Abstract

被処理物の載置面を上面に備えた載置台と載置台を下面側から支持する支持部材と、一方の端部が載置台の下面側に気密に接合されている第１筒状部材と、第1筒状部材の内側に配置され、かつ、一方の端部が載置台の下面側に気密に接合されている第２筒状部材と、を有するウエハ保持体。

Description

ウエハ保持体
　本開示は、ウエハ保持体に関する。本出願は、２０１６年１１月２９日出願の日本出願２０１６-２３０８０６号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。
　ＬＳＩなどの半導体デバイスを製造する半導体製造装置では、被処理物である半導体ウエハに対してＣＶＤやスパッタリングに代表される成膜処理やエッチング処理など、様々な薄膜処理が施される。これら薄膜処理は加熱状態の半導体ウエハに対して施すことが多く、そのため当該薄膜処理を行うチャンバー内には処理対象の半導体ウエハを載置してその下面から加熱するサセプタとも称されるウエハ加熱ヒータが一般的に搭載されている。
　上記ウエハ加熱ヒータは、例えば特許文献１に示されるように上面に平坦なウエハ載置面を備えたセラミックス製の円板状部材からなるウエハ載置台と、これを下面側から支持する円筒状の支持部材とから構成されており、該ウエハ載置台の内部に埋設された抵抗発熱体で半導体ウエハを加熱するようになっている。ウエハ載置台の内部には、更にプラズマを発生させる高周波（ＲＦ）電極や半導体ウエハをウエハ載置面に電気的に吸着固定させる静電チャック（ＥＳＣ）電極が設けられることもある。
特開２００３－１７２２４号公報
　被処理物の載置面を上面に備えた載置台と載置台を下面側から支持する支持部材と、一方の端部が載置台の下面側に気密に接合されている第１筒状部材と、第1筒状部材の内側に配置され、かつ、一方の端部が載置台の下面側に気密に接合されている第２筒状部材と、を有するウエハ保持体。
図１は、本開示に係るウエハ保持体の一具体例としてのウエハ加熱ヒータの模式的な縦断面図である。 図２Ａは、図１のウエハ加熱ヒータが有する第1筒状部材及び第２筒状部材の気密接合部分の第1の形態を示す部分断面図である。 図２Ｂは、図１のウエハ加熱ヒータが有する第1筒状部材及び第２筒状部材の気密接合部分の第２の形態を示す部分断面図である。 図２Ｃは、図１のウエハ加熱ヒータが有する第1筒状部材及び第２筒状部材の気密接合部分の第３の形態を示す部分断面図である。 図２Ｄは、図１のウエハ加熱ヒータが有する第1筒状部材及び第２筒状部材の気密接合部分の第４の形態を示す部分断面図である。
　上記したようにウエハ加熱ヒータのウエハ載置台は内部に抵抗発熱体等の電極を有しているため、これに給電する端子部がウエハ載置台の下面側に設けられている。また、ウエハ載置台には熱電対等の温度センサーが取り付けられることがあり、この場合もその端子部が下面側に設けられることになる。これら端子部は半導体ウエハの処理の際にウエハ載置台と共に６００℃程度まで昇温するので、ＣＶＤやエッチング等に用いる反応性ガスとしてチャンバー内に導入されるハロゲンガス等の腐食性ガスから保護することが必要となる。
　そこで、抵抗発熱体等に設けられる電極の端子部やそれに接続される引出線を筒状部材の内側に収納すると共に、該筒状部材の両端部をそれぞれウエハ載置台の底面及びチャンバーの床面に気密シールすることが考えられる。しかし、ウエハ載置台は一般に昇温と降温が繰り返されるため、筒状部材とウエハ載置台との接合部分がこのヒートサイクルによって破損することがあった。更に、メンテナンスを行う際に筒状部材に横方向の外部応力がかかって上記接合部分が破損することがあった。
　また、ウエハ載置台には冷却のための冷媒の循環路を内部に設けたり、ウエハ載置面に載置した半導体ウエハを真空吸引するための溝をウエハ載置面に設けたりすることがあり、前者の場合は当該冷媒の供給・排出用流路を、後者の場合は当該溝に連通する流路をウエハ載置台の下面側に設けることが必要になる。これら流路もリークが生じないようにウエハ載置台に確実に気密シールする必要があるが、上記したヒートサイクル等の応力によって破損することがあった。本開示は、このような従来の事情に鑑みてなされたものであり、被処理物の載置台とこれを支持する支持部材とからなるウエハ保持体において、該載置台に設けられた筒状部材にヒートサイクルなどの応力がかかっても破損しにくい構造を提供する。
　最初に本開示の実施形態を列記して説明する。本開示のウエハ保持体は、被処理物の載置面を上面に備えた載置台と載置台を下面側から支持する支持部材と、一方の端部が載置台の下面側に気密に接合されている第１筒状部材と、第1筒状部材の内側に配置され、かつ、一方の端部が載置台の下面側に気密に接合されている第２筒状部材と、を有するウエハ保持体である。これにより載置台と第２筒状部材との接合部分の強度を向上させることができる。
　上記のウエハ保持体においては、載置台に少なくとも一部が埋設されている電極を有し、電極は第２筒状部材の内側に収容されていてもよい。
　さらに、上記のウエハ保持体においては、載置台に少なくとも一部が埋設されている温度センサーと、温度センサーから引き出された引出線とを有し、温度センサーと引出線とが第２筒状部材の内側に収容されていてもよい。
さらに、上記のウエハ保持体においては、載置台に少なくとも一部が埋設されている電極と載置台に少なくとも一部が埋設されている温度センサーと、温度センサーから引き出された引出線とを有し、電極と温度センサーと引出線とが第２筒状部材の内側に収容されていてもよい。これにより、電極、温度センサーやその引出線を腐食性雰囲気から隔離することができる。あるいは、載置台は内部に流路を有し、載置面は溝を有し、第２筒状部材の内側が流路又は溝に連通する流路として構成されていてもよい。これにより、第２筒状部材の内側の流路と外側との間のリークを確実に防ぐことができる。
　また、上記のウエハ保持体においては、載置台は半導体ウエハ載置用のセラミックス製の円板形状を有し、載置台の内部に埋設された抵抗発熱体をさらに有してもよい。この場合は、ウエハ保持体を搭載する半導体製造装置の信頼性を向上させることができる。なお、「円板形状」とは、図形的に正確な円板を意図するものではなく、外観として円板と認識される構成であることが意図される。以降、同様の意味で「略円板状」と記載することもある。
　次に、本開示のウエハ保持体の一具体例として、図１に示す半導体製造装置１００に搭載されるウエハ加熱ヒータ２をとりあげて説明する。図１に示す半導体製造装置１００は、半導体ウエハ３０に対してエッチング処理やＣＶＤ処理などの薄膜処理が行われるチャンバー１と、その内部に搭載されたウエハ加熱ヒータ２とから主に構成され、ウエハ加熱ヒータ２は、ウエハ載置面２１ａを上面に備えた好適にはセラミックスからなる略円板状のウエハ載置台２１と、これを下面から支持する好適にはセラミックスからなる略円筒形状の支持部材２２とを有している。上記のウエハ載置台２１や支持部材２２の好適な材質であるセラミックとしては、例えば窒化アルミニウム、窒化ケイ素、炭化ケイ素、酸化アルミニウム等を挙げることができる。
　ウエハ載置台２１の内部には、所定の回路パターンを有する抵抗発熱体２１ｂがウエハ載置面２１ａに対して平行に埋設されている。抵抗発熱体２１ｂの形態には特に制約はない。例えばステンレス箔などの金属箔をパターニング加工したものやタングステン等の金属粉を含んだペーストをスクリーン印刷及び焼成して形成したものでもよいし、モリブデンコイルでもよい。ウエハ載置台２１の内部には、更に熱電対２１ｃが設けられている。熱電対２１ｃの一部は支持部材２２の内側でウエハ載置台２１の下面側から突出している。なお、抵抗発熱体２１ｂの両端部に接続する図示しない電極も支持部材２２の内側でウエハ載置台２１の下面側から同様に突出している。
　熱電対２１ｃには引出線２３の一端部が接続しており、引出線２３は支持部材２２の内側を下端まで延在し、チャンバー１の底面に設けられている貫通孔１ａを通ってチャンバー１の外部に引き出されている。支持部材２２の両端部は外側に屈曲したフランジ形状になっており、支持部材２２の上端部では該フランジ形状の上端面とウエハ載置台２１の下面とを焼結により接合してもよいし、該フランジ形状部分を貫通するネジ等の結合手段によってウエハ載置台２１の下面に接合してもよい。一方、支持部材２２の下端部では上記した上端部と同様にしてチャンバー１の底面に接合してもよいが、クランプ等の結合手段により取外し自在に結合することが好ましい。
　熱電対２１ｃ及びその引出線２３を収容する好適にはセラミックで形成される外径６～３０ｍｍ程度、肉厚０.５～５ｍｍ程度の第２筒状部材２４が支持部材２２の内側に設けられている。第２筒状部材２４の上端部は、ウエハ載置台２１の下面側に気密に接合されている。第２筒状部材２４の下端部は貫通孔１ａを通ってチャンバー１の下部から突出している。そして、第２筒状部材２４のウエハ載置台２１との接続部（第２筒状部材２４の外側）に、好適にはセラミックで形成される内径６～３０ｍｍ程度、肉厚０.５～５ｍｍ程度、長さ１～３０ｍｍ程度の第１筒状部材２５が配置されている。第１筒状部材２５は第２筒状部材２４よりも短く構成されている。第１筒状部材２５の一方の端部である上端部は、ウエハ載置台２１の下面側に気密に接合されている。つまり、ウエハ加熱ヒータ２は、第1筒状部材２５の内側に配置され、かつ、一方の端部が載置台の下面側に気密に接合されている第２筒状部材２４を備えている。
　かかる構成により、上記したヒートサイクル等により第２筒状部材２４に対してその延在方向に垂直な方向の応力がかかっても、第２筒状部材２４の上端部とウエハ載置台２１の下面側との接合部に働く力を第２筒状部材２４の上端部の接合部分と第１筒状部材２５の上端部の接合部分とに分散させることができる。これにより、当該応力に対する強度を向上させることができるので、第２筒状部材２４の内側において高い気密性を確保することができ、ウエハ加熱ヒータ２を搭載する半導体製造装置１００の信頼性が向上する。
　第２筒状部材２４の上端部及び第１筒状部材２５の上端部は、図２Ａ～Ｄ（第１の形態～第４の形態）に示すように、ガラスなどの封止機能を有する封止材２６によってウエハ載置台２１の下面側に接合することが好ましい。封止材２６による接合では、図２Ａ（第１の形態）に示すように、ウエハ載置台２１の下面にそのまま第２筒状部材２４及び第１筒状部材２５の上端部を好適にはそろえた状態で接合してもよい。また、図２Ｂ～Ｄに示すように、ウエハ載置台２１の下面に環状の溝を設けてその内側に第２筒状部材２４及び第１筒状部材２５の少なくとも一方の上端部を嵌め込んでもよい。
　図２Ａに示す構造は、ウエハ載置台２１の下面に溝を形成しないので製作コストを抑えることができる。一方、より高い強度が求められる場合は図２Ｂ（第２の形態）、図２Ｃ（第３の形態）に示す構造が好ましい。なお、図２Ｂに示す構造は、第２筒状部材２４のみを溝に嵌め込む場合である。図２Ｃに示す構造は、第１筒状部材２５のみを溝に嵌め込む場合である。図２Ｄ（第４の形態）に示す構造は、第２筒状部材２４と第１筒状部材２５の両方を溝に嵌め込む場合である。第２筒状部材２４と第１筒状部材２５の両方を溝に嵌め込む場合は、図２Ｄに示すように溝内に第２筒状部材２４を第１筒状部材２５よりも深く挿入させる場合に限定するものではなく、その逆でもよいし両方の先端部を同じ深さで挿入してもよい。
　上記のウエハ保持体であるウエハ加熱ヒータ２では、第２筒状部材２４の内側に熱電対２１ｃ及びその引出線２３である電気線を収容する場合について説明した。なお、ウエハ載置台２１に埋設されている抵抗発熱体２１ｂ、ＲＦ回路、ＥＳＣ回路などに設けられる電極及びその給電線を第２筒状部材２４の内側に収容してもよい。あるいは、ウエハ載置台２１の内部やウエハ載置面２１ａに設けた冷媒の循環路や吸引チャック用の溝に連通する流路として第２筒状部材２４の内側空間を使用してもよい。また、第１筒状部材２５で接合部を補強した第２筒状部材２４は、支持部材２２の内側のみならず支持部材２２の外側に設けてもよい。
　更に、支持部材２２の両端部を気密にシールし、腐食性雰囲気になる支持部材２２の外側から支持部材２２の内側を隔離してもよい。この場合、支持部材２２の内側を不活性ガス雰囲気にしてもよい。また、上記した第２筒状部材２４の内側に電極等を収容する場合は、第２筒状部材２４の内側を不活性ガス雰囲気にしてもよい。不活性ガスとしては、電極等の構成材料を劣化させるような反応を起こさないガスであれば特に制約はない。具体的には、Ｈｅ、Ｎｅ、Ａｒ、Ｋｒ、Ｘｅ、Ｒｎのような希ガスや、Ｎ２ガスなどを使用することができる。これらの中では、コストなどの観点からＮ２やＡｒが好ましい。
　窒化アルミニウム粉末９９.５質量部に焼結助剤として酸化イットリウム０.５質量部を加え、更にバインダー、有機溶剤を加えて、ボールミル混合することにより、スラリーを作製した。得られたスラリーをスプレードライ法で噴霧することにより顆粒を作製し、これをプレス成形して２枚の同形状の成形体を作製した。これら成形体を窒素雰囲気中にて７００℃の条件で脱脂した後、窒素雰囲気中において１８５０℃で焼結して、２枚の窒化アルミニウム焼結体を得た。得られた焼結体を、直径３３０ｍｍ、厚み８ｍｍの円板状に加工した。このときの表面粗さはＲａで０.８μｍ、平面度は５０μｍであった。
　これら２枚の窒化アルミニウム焼結体のうち、一方の焼結体の片面に抵抗発熱体を形成すべくＷ（タングステン）ペーストを線幅が全て４ｍｍとなるようにスクリーン印刷により塗布してから窒素雰囲気中にて７００℃で脱脂した後、窒素雰囲気中にて１８３０℃で焼成した。これにより略同心円状の回路パターンを有する抵抗発熱体を形成した。次に、もう一方の窒化アルミニウム焼結体の片面に接着用の窒化アルミニウムを主成分とする接着材料を塗布してから脱脂を行った。そして、これら２枚の窒化アルミニウム焼結体を抵抗発熱体を覆うように重ね合わせて接合させた。このようにして得た接合体に対してその片面に抵抗発熱体の両端部にそれぞれ達する２つの穴をザグリ加工し、各穴に抵抗発熱体の端部に当接するようにＷ（タングステン）製電極を嵌入した。
　図２Ｄに示すように、接合体の同じ片面に熱電対用の穴をザグリ加工し、熱電対２１ｃを取り付けた。また、この熱電対用のザグリ穴を囲むように、後述する第２筒状部材２４及び第１筒状部材２５の上端部の嵌入用の環状の溝をザグリ加工した。なお、この環状の溝の穴の底部には段差を設けて第２筒状部材２４の溝の深さが５ｍｍ、第１筒状部材２５の溝の深さが３ｍｍとなるようにした。
　このようにして作製したウエハ載置台２１の上記Ｗ製電極及び熱電対２１ｃを嵌入させた面に、両端部にフランジ部を有する内径６０ｍｍ、高さ１５０ｍｍ、肉厚２ｍｍのＡｌＮ製の円筒状の支持部材２２の一端部をネジで接合した。なお、フランジ部とウエハ載置台の接合面との間はＯ－リングを用いて気密にシールした。そして、支持部材の内側でウエハ載置台２１の下面から突出している電極に給電線を接続した。
　支持部材２２の一端部が接合されたウエハ載置台２１をＣＶＤ装置のチャンバー内に搭載し、支持部材２２の他端部をチャンバーの底部にＯ－リングで気密シールした状態でクランプを用いて固定した。更に、図１および図２Ｄに示すように、熱電対２１ｃ及びその引出線２３を収容する外径１０ｍｍ、肉厚２ｍｍ、長さ１７５ｍｍのセラミック製の第２筒状部材２４の上端部を上記ウエハ載置台２１の下面側の環状の溝に嵌入させた。更に第２筒状部材２４の上部に外径１４ｍｍ、肉厚２ｍｍ、長さ８ｍｍのセラミック製の第１筒状部材２５を配置し、その上端部をウエハ載置台２１の下面側の環状の溝に嵌入させた。つまり、第２筒状部材２４を第１筒状部材２５の内側に配置した。
　この環状の溝内に封止用ガラスを入れ、第２筒状部材２４及び第１筒状部材２５の上端部とウエハ載置台２１の下面側とを封止用ガラスを溶融させ気密に接合した。なお、第２筒状部材２４の下側はチャンバーの底部に設けた貫通孔を通り、該貫通孔と第２筒状部材２４の外周面との間はＯ－リングで気密にシールした。このようにして試料１のウエハ加熱ヒータ２を作製した。
　比較のため、第１筒状部材２５を使用せずに第２筒状部材２４のみを用いて熱電対２１ｃ及びその引出線２３を収容した以外は上記試料１と同様にして試料２のウエハ加熱ヒータを製作した。試料１及び２のウエハ加熱ヒータ２の各々に対して、抵抗発熱体に給電したり該給電を停止したりすることでウエハ載置台２１の温度を室温と５００℃との間で昇降温させるヒートサイクルを１０サイクル繰り返した。その結果、試料１では第２筒状部材２４とウエハ載置台２１の下面側との間で気密シールが確保されていたが、試料２では第２筒状部材２４とウエハ載置台２１の下面側との間にリークが発生した。
　今回開示された実施の形態はすべての点で例示であって、どのような面からも制限的なものではないと理解されるべきである。本発明はこれらの例示に限定されるものではなく、請求の範囲によって示され、請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。
　１　　　チャンバー
　１ａ　　貫通孔
　２　　　ウエハ加熱ヒータ
　２１　　ウエハ載置台
　２１ａ　ウエハ載置面
　２１ｂ　抵抗発熱体
　２１ｃ　熱電対
　２２　　支持部材
　２３　　引出線
　２４　　第２筒状部材
　２５　　第１筒状部材
　２６　　封止材
　３０　　　半導体ウエハ
　１００　　半導体製造装置

Claims (6)

  1. 　被処理物の載置面を上面に備えた載置台と
    前記載置台を下面側から支持する支持部材と、
    一方の端部が前記載置台の下面側に気密に接合されている第１筒状部材と、
    前記第1筒状部材の内側に配置され、かつ、一方の端部が前記載置台の下面側に気密に接合されている第２筒状部材と、を有するウエハ保持体。
  2. 　前記載置台に少なくとも一部が埋設されている電極を有し、前記電極は前記第２筒状部材の内側に収容されている、請求項１に記載のウエハ保持体。
  3. 　前記載置台に少なくとも一部が埋設されている温度センサーと、前記温度センサーから引き出された引出線とを有し、前記温度センサーと前記引出線とが前記第２筒状部材の内側に収容されている、請求項１に記載のウエハ保持体。
  4. 　前記載置台に少なくとも一部が埋設されている電極および前記載置台に少なくとも一部が埋設されている温度センサーと、前記温度センサーから引き出された引出線とを有し、前記電極と前記温度センサーと前記引出線とが前記第２筒状部材の内側に収容されている、請求項１に記載のウエハ保持体。
  5. 　前記載置台は内部に流路を有し、前記載置面は溝を有し、前記第２筒状部材の内側が前記流路又は前記溝に連通する流路として構成されている、請求項１に記載のウエハ保持体。
  6. 前記載置台は半導体ウエハ載置用のセラミックス製の円板形状を有し、その内部に抵抗発熱体が埋設されている、請求項１～５のいずれか１項に記載のウエハ保持体。
PCT/JP2017/037468 2016-11-29 2017-10-17 ウエハ保持体 WO2018100903A1 (ja)

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102406136B1 (ko) * 2016-11-29 2022-06-10 스미토모덴키고교가부시키가이샤 웨이퍼 유지체
TWI755996B (zh) * 2020-12-24 2022-02-21 天虹科技股份有限公司 用以產生均勻溫度的晶圓承載盤及應用該晶圓承載盤的薄膜沉積裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152865A (ja) * 2002-10-29 2004-05-27 Nhk Spring Co Ltd ステージ
JP2004307939A (ja) * 2003-04-07 2004-11-04 Tokyo Electron Ltd 熱処理装置
WO2007020872A1 (ja) * 2005-08-19 2007-02-22 Tokyo Electron Limited 載置台構造、載置台構造の製造方法及び熱処理装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0711446A (ja) * 1993-05-27 1995-01-13 Applied Materials Inc 気相成長用サセプタ装置
JP3813654B2 (ja) * 1995-02-09 2006-08-23 日本碍子株式会社 セラミックスの接合構造およびその製造方法
JP3720606B2 (ja) * 1998-12-28 2005-11-30 京セラ株式会社 セラミック部材と金属部材の接合体及びこれを用いたウエハ支持部材
JP4398064B2 (ja) * 2000-05-12 2010-01-13 日本発條株式会社 加熱装置
JP3582518B2 (ja) 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
JP3678413B2 (ja) * 2001-05-31 2005-08-03 京セラ株式会社 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材
JP4331427B2 (ja) * 2001-10-03 2009-09-16 住友電気工業株式会社 半導体製造装置に使用される給電用電極部材
JP2006245610A (ja) * 2002-03-13 2006-09-14 Sumitomo Electric Ind Ltd 半導体製造装置用保持体
US20040182321A1 (en) 2002-03-13 2004-09-23 Akira Kuibira Holder for semiconductor production system
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP4258309B2 (ja) * 2003-08-01 2009-04-30 住友電気工業株式会社 半導体製造装置用サセプタおよびそれを搭載した半導体製造装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP2011061040A (ja) * 2009-09-10 2011-03-24 Tokyo Electron Ltd 載置台構造及び処理装置
US20120211484A1 (en) * 2011-02-23 2012-08-23 Applied Materials, Inc. Methods and apparatus for a multi-zone pedestal heater
JP5666419B2 (ja) * 2011-11-28 2015-02-12 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
JP5861563B2 (ja) * 2012-05-31 2016-02-16 住友電気工業株式会社 ウエハ加熱用ヒータ
TWI665328B (zh) 2014-07-02 2019-07-11 美商應用材料股份有限公司 用於電漿處理的多區域基座
JP2016103345A (ja) * 2014-11-27 2016-06-02 京セラ株式会社 接続構造体およびそれを備えたヒータ
JP6497248B2 (ja) * 2015-07-13 2019-04-10 住友電気工業株式会社 ウェハ保持体
KR102406136B1 (ko) * 2016-11-29 2022-06-10 스미토모덴키고교가부시키가이샤 웨이퍼 유지체

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152865A (ja) * 2002-10-29 2004-05-27 Nhk Spring Co Ltd ステージ
JP2004307939A (ja) * 2003-04-07 2004-11-04 Tokyo Electron Ltd 熱処理装置
WO2007020872A1 (ja) * 2005-08-19 2007-02-22 Tokyo Electron Limited 載置台構造、載置台構造の製造方法及び熱処理装置

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US12046488B2 (en) 2024-07-23
US20210375647A1 (en) 2021-12-02
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JP2021132217A (ja) 2021-09-09
KR20190086368A (ko) 2019-07-22

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