WO2016206163A1 - 一种薄膜晶体管、阵列基板和液晶显示面板 - Google Patents

一种薄膜晶体管、阵列基板和液晶显示面板 Download PDF

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WO2016206163A1
WO2016206163A1 PCT/CN2015/085282 CN2015085282W WO2016206163A1 WO 2016206163 A1 WO2016206163 A1 WO 2016206163A1 CN 2015085282 W CN2015085282 W CN 2015085282W WO 2016206163 A1 WO2016206163 A1 WO 2016206163A1
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nitrogen
oxide semiconductor
thin film
film transistor
semiconductor layer
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PCT/CN2015/085282
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French (fr)
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李珊
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深圳市华星光电技术有限公司
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Priority to US14/773,117 priority Critical patent/US9893205B2/en
Publication of WO2016206163A1 publication Critical patent/WO2016206163A1/zh

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Abstract

一种薄膜晶体管、阵列基板和液晶显示面板。该薄膜晶体管，其包括：有源层（103），所述有源层（103）由掺氮氧化物半导体层（1031）和无氮氧化物半导体层（1032）构成。通过在掺氮薄膜晶体管的有源层中设置无氮氧化物半导体层（1032）保持薄膜晶体管的迁移率不变，提升了薄膜晶体管的可靠性。

Description

一种薄膜晶体管、阵列基板和液晶显示面板 技术领域
本发明涉及液晶显示器技术领域，特别是涉及一种薄膜晶体管、阵列基板和液晶显示面板。
 背景技术
非晶氧化物半导体（AOS）薄膜晶体管（TFT）具有良好的电学性能、高透光率及低温制作工艺等优点而引起了人们的广泛关注，是驱动新一代平板显示的有源电子器件最有力的竞争者之一，比较常见的AOS TFT包括a-IGZO TFT（氧化铟镓锌薄膜晶体管）、IZO TFT、ZTO TFT等。
为了改善TFT器件的某些电性指标和稳定性，现有一般通过氮气调节AOS-TFT的有源层中氧空位的水平，即向AOS-TFT的有源层中掺氮，此类AOS-TFT称为掺氮非晶氧化物薄膜晶体管。然而，掺氮一般会引起器件迁移率的下降，这不利于制备具有较高迁移率的AOS-TFT器件来满足平板显示领域的工程应用需求。因此，如何使掺氮AOS-TFT器件的场效应迁移率（mobility）保持不变在生产中具有重要的意义。
 技术问题
本发明的目的在于提供一种薄膜晶体管、阵列基板和液晶显示面板，以解决如何使掺氮AOS-TFT器件的场效应迁移率保持不变的技术问题。
 技术解决方案
本发明的实施例提供了一种薄膜晶体管，其包括：
栅极；
栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
在本发明的薄膜晶体管中，所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；
所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
在本发明的薄膜晶体管中，所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度不同。
在本发明的薄膜晶体管中，所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度相同。
在本发明的薄膜晶体管中，任意两个所述掺氮氧化物半导体层的厚度相同。
在本发明的薄膜晶体管中，任意两个所述掺氮氧化物半导体层的厚度不相同。
在本发明的薄膜晶体管中，所述有源层包括：两个掺氮氧化物半导体层、和一个无氮氧化物半导体层。
在本发明的薄膜晶体管中，所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。
在本发明的薄膜晶体管中，所述栅极绝缘层的厚度在98nm至102nm之间。
在本发明的薄膜晶体管中，所述栅极绝缘层的材质为氧化硅。本发明的实施例还提供了一种阵列基板，其包括：
基板衬底，所述基板衬底上形成有多条数据线、多条扫描线、多个像素单元、和薄膜晶体管；
所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；
所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；以及
所述薄膜晶体管，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管的漏极传输给对应的所述像素电极；
其中，所述薄膜晶体管具体包括：
栅极；
栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
在本发明的阵列基板中，所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；
所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
在本发明的阵列基板中，所述有源层包括：两个掺氮氧化物半导体层、和位于两个掺氮氧化物半导体层之间的一个无氮氧化物半导体层。
在本发明的阵列基板中，所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度相同。
在本发明的阵列基板中，两个所述掺氮氧化物半导体层的厚度相同。
在本发明的阵列基板中，所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。本发明的实施例还提供了一种液晶显示面板，其包括：
彩膜基板；
阵列基板，所述阵列基板包括多条数据线、多条扫描线、多个像素单元、和薄膜晶体管；以及
液晶层，所述液晶层设置在所述彩膜基板和所述阵列基板之间的液晶层；
所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；
所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；
所述薄膜晶体管，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管的漏极传输给对应的所述像素电极；
其中，所述薄膜晶体管具体包括：
栅极；
栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
在本发明的液晶显示面板中，所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
在本发明的液晶显示面板中，所述有源层包括：两个掺氮氧化物半导体层、和一个无氮氧化物半导体层。
在本发明的液晶显示面板中，所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。
 有益效果
本发明提供了一种薄膜晶体管、阵列基板和液晶显示面板；本发明的薄膜晶体管中有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；通过无氮氧化物半导体层来保持有源层体内具有足够的氧空位来提供所需的载流子数量，进而可以保持薄膜晶体管（例如AOS TFT）的迁移率不变，有利于提升薄膜晶体管的可靠性，降低生产成本。
 附图说明
图1为本发明实施例一提供的第一种薄膜晶体管的结构示意图；
图2为本发明实施例一提供的第二种薄膜晶体管的结构示意图；
图3为本发明实施例一提供的第三种薄膜晶体管的结构示意图；
图4为本发明实施例二提供的一种阵列基板的结构示意图；
图5为本发明实施例二提供的一种薄膜晶体管有源层的结构示意图；
图6为本发明实施例三提供的一种液晶显示面板的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
实施例一：
如图1所示，本实施例提供了一种薄膜晶体管(以AOS TFT为例)，包括：栅极101、栅极绝缘层102、有源层103、薄膜晶体管的源极104和漏极105；
本实施例中，栅极绝缘层102位于所述栅极101上方，可通过化学沉积的方式形成；有源层103位于所述栅极绝缘层102上方，可通过化学沉积的方式形成，其中形成有源层103的材料可以为掺氮非晶氧化物半导体，例如掺氮a-IGZO等；
本实施例中有源层103由掺氮氧化物半导体层1031和无氮氧化物半导体层1032构成，在图1中，有源层103包括：至少两个掺氮氧化物半导体层1031和至少一个无氮氧化物半导体层1032；
本实施例中有源层103中掺氮氧化物半导体层1031和无氮氧化物半导体层1032的数量可以根据实际需求设定，例如有源层可以包括：三个掺氮氧化物半导体层1031和两个无氮氧化物半导体层1032等等。
本实施例的掺氮薄膜晶体管是在现有掺氮薄膜晶体管的有源层中增加了无氮氧化物半导体层1032，通过无氮氧化物半导体层1032来保持有源层103体内具有足够的氧空位来提供所需的载流子数量，进而可以保持薄膜晶体管（例如AOS TFT）的迁移率不变，有利于提升薄膜晶体管的可靠性，降低生产成本。
优选地，本实施例中有源层103中各掺氮氧化物半导体层1031的厚度可以相同或者不同；如果厚度相同，则可以方便制作薄膜晶体管，提升制作效率，节约生产成本；如果厚度不相同，可以满足不同应用场景中对迁移率的不同需求，扩大了薄膜晶体管的应用范围。
优选地，本实施例中有源层103中掺氮氧化物半导体层1031与无氮氧化物半导体层1032的厚度可以相同或者不同；如果厚度相同，则在制作薄膜晶体管时可以按照同一厚度尺寸制作掺氮氧化物半导体层1031与无氮氧化物半导体层1032，提升了制作效率，节约了生产成本；如果厚度不同，则可以满足不同应用场景中对迁移率的不同需求以及对薄膜晶体管尺寸的要求。
为了更好地保持薄膜晶体管的迁移率不变或者提高薄膜晶体管的迁移率，优选地，本实施例中有源层103中无氮氧化物半导体层1032形成在两个相邻的所述掺氮氧化物半导体层1031之间；也就是说，可以在任意两相邻的掺氮氧化物半导体层1031之间形成一无氮氧化物半导体层1032。
在本实施例中考虑到薄膜晶体管尺寸和制作工艺，优选地，本实施例中掺氮氧化物半导体层1031的厚度在8nm至12nm之间，无氮氧化物半导体层1032的厚度在8nm至12nm之间。
如图2所示，本实施例提供了另一种薄膜晶体管，其有源层103包括：第一掺氮氧化物半导体层1033、第二掺氮氧化物半导体层1034、第三掺氮氧化物半导体层1035、第一无氮氧化物半导体层1036和第二无氮氧化物半导体层1037；其中，第一无氮氧化物半导体层1036位于第一掺氮氧化物半导体层1033和第二掺氮氧化物半导体层1034之间，第二无氮氧化物半导体层1037位于第二掺氮氧化物半导体层1034和第三掺氮氧化物半导体层1035之间。
由于大部分薄膜晶体管的有源层包括三个氧化物半导体层，因此考虑到提升薄膜晶体管的应用广泛性，优选地，本实施例中有源层103可以包括：两个掺氮氧化物半导体层、和一个无氮氧化物半导体层，其中，该无氮氧化物半导体层位于这两个掺氮氧化物半导体层之间。如图3所示，本实施例提供了又一种薄膜晶体管，其有源层103包括：第一掺氮氧化物半导体层1033、第二掺氮氧化物半导体层1034、以及位于所述第一掺氮氧化物半导体层1033、第二掺氮氧化物半导体层1034之间的无氮氧化物半导体层1036；其中，第一掺氮氧化物半导体层1033、第二掺氮氧化物半导体层1034、无氮氧化物半导体层1036的厚度可以均为10nm,栅极绝缘层102的厚度可以为100nm。
优选地，本实施例中可以采用RF Sputter（射频溅镀）在栅绝缘层102上连续沉积第一掺氮氧化物半导体层1033、无氮氧化物半导体层1035和第二掺氮氧化物半导体层1034。在无氮氧化物半导体层1036沉积时使用氩气；第一掺氮氧化物半导体层1033和第二掺氮氧化物半导体层1034沉积时采用氩气/氮气，氩/氮比例根据实际情况进行调整。
优选地，图3所示的薄膜晶体管可以为a-IGZO TFT，该TFT中的有源层中氧化物半导体材料可以为a-IGZO。
通过对掺氮a-IGZO TFT、无氮a-IGZO TFT、本实施例中图3所示结构的a-IGZO TFT（称之为掺氮埋沟a-IGZOTFT）分别进行测试，可以得出掺氮埋沟器件(BC)与有源层采用无氮或掺氮AOS的器件相比同时具有最小的亚阈值摆幅（SS值）和最高的迁移率（Mobility）。由于本实施例薄膜晶体管的有源层中包括掺氮氧化物半导体层可以在改善器件某些电性指标与稳定性，例如前沟道采用掺氮AOS层来改善有源层与栅绝缘层之间的界面态状况,从而改善整个器件的亚阈值摆幅（ss值），或者背沟道采用掺氮AOS层可以降低有源层半导体中Deep states(背沟道下2nm)的水平；并且又由于本实施例薄膜晶体管的有源层中还包括掺氮氧化物半导体层，可以在改善器件电性指标与稳定性的同时保持器件的迁移率不损失。本实施例的薄膜晶体管可以应用在液晶显示面板的阵列基板中，提升阵列基板的稳定性，进而提升液晶显示面板的显示品质。
实施例二：
本实施例提供了一种液晶显示面板的阵列基板，如图4所示，包括：基板衬底401、在所述基板衬底上的多个数据线（图中未示出）、多个扫描线（图中未示出）、多个像素电极402和薄膜晶体管403；其中，所述薄膜晶体管403具体包括：在所述基底衬板401上形成的栅极4031、在所述栅极4031上方形成的栅极绝缘层4032、在所述栅极绝缘层4032上方形成的有源层4033、以及在所述有源层4033两侧形成的源极4034和漏极4035；
所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；所述薄膜晶体管403，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管403的漏极4035传输给对应的所述像素电极402；
如图5所示，在本实施例中有源层4033可以由掺氮氧化物半导体层4033a和无氮氧化物半导体层4033b构成。
本实施例中有源层4033中掺氮氧化物半导体层4033a和无氮氧化物半导体层4033b的数量可以根据实际需求设定。
由于本实施例阵列基板的TFT的有源层包括掺氮氧化物半导体层4033a，可以改善TFT的电性指标和稳定性；又由于本实施例阵列基板的TFF的有源层4033还包括无氮氧化物半导体层4033b，该无氮氧化物半导体层4033b可以保持有源层4033体内具有足够的氧空位来提供所需的载流子数量，保持器件的迁移率不损失，避免因在有源层中掺氮导致的器件迁移率下降的问题，进而提升了阵列基板的稳定性，满足液晶显示技术领域的各种工程应用需求。
为了进一步保证掺氮TFT的器件迁移率不下降，优选地，在有源层4033包括至少两个掺氮氧化物半导体层4033a和至少一个无氮氧化物半导体层4033b的情况下，所述无氮氧化物半导体层4033b形成在两个相邻的所述掺氮氧化物半导体层4033a之间；也就是说，每两个相邻的掺氮氧化物半导体层4033a之间均形成有一个无氮氧化物半导体层4033b。
优选地，本实施例中有源层4033可以包括：两个掺氮氧化物半导体层4033a和一个无氮氧化物半导体层4033b，其中该无氮氧化物半导体层4033b位于这两个掺氮氧化物半导体层4033a之间，具体结构可以参考图3。关于本实施例中TFT有源层4033中半导体层的厚度，可以参考实施例一中的半导体层的厚度描述。
下面详细说明本实施例的液晶显示面板的阵列基板的制作过程，该阵列基板的制作过程包括：
A、在基板衬底制作第一金属层。
B、对所述第一金属层进行图形化处理，以形成扫描线以及薄膜场效应晶体管的栅极区。具体可为：采用光罩工艺对第一金属层进行湿刻处理，以形成扫描线以及薄膜场效应晶体管的栅极区。
C、在所述第一金属层上形成栅极绝缘层，然后在栅极绝缘层上依次沉积第一掺氮氧化物半导体层、无氮氧化物半导体层、以及第二掺氮氧化物半导体层。即在栅极绝缘层上沉积有源层。
D、在第二掺氮氧化物半导体层上形成第二金属层，然后对第二金属层进行图形化处理，以形成薄膜场效应晶体管的源极区、薄膜场效应晶体管的漏极区、数据线以及走线。
E、对有源层和第二金属层进行图形化处理，以形成所述薄膜场效应晶体管的源极区、所述薄膜场效应晶体管的漏极区以及数据线。具体可为：对第二金属层进行湿法刻蚀，对有源层进行干法刻蚀，形成薄膜场效应晶体管的源极区、薄膜场效应晶体管的漏极区以及源极区和漏极区之间的沟道，同时也形成了液晶显示面板的数据线。
F、在第一金属层上形成像素电极。
通过步骤A-F即完成了本实施例的液晶显示面板的阵列基板的制作流程。
实施例三：
本实施例提供了一种液晶显示面板，如图6所示，包括：彩膜基板601、阵列基板602以及设置在所述彩膜基板601和所述阵列基板602之间的液晶层603；阵列基板602的结构可以参考图4，具体包括：
基板衬底；
在所述基板衬底上的多个数据线、多个扫描线、多个像素电极和多个薄膜晶体管；
所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；
所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；
所述薄膜晶体管，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管的漏极传输给对应的所述像素电极；
其中，所述薄膜晶体管具体包括：在所述基底衬板上形成的栅极、在所述栅极上方形成的栅极绝缘层、在所述栅极绝缘层上方形成的有源层、以及在所述有源层两侧形成的源极和漏极；
参考图5，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成。
优选地，本实施例中所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
本实施例液晶显示面板的阵列基板中TFT有源层包括掺氮氧化物半导体层，可以改善TFT的电性指标和稳定性，进而提升阵列基板的稳态性和液晶显示面板的显示品质；又由于本实施例阵列基板的TFF的有源层还包括无氮氧化物半导体层，该无氮氧化物半导体层可以保持有源层体内具有足够的氧空位来提供所需的载流子数量，保持器件的迁移率不损失，避免因在有源层中掺氮导致的器件迁移率下降的问题，进一步提升了阵列基板的稳定性和液晶显示面板的显示品质，满足液晶显示技术领域的各种工程应用需求。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种薄膜晶体管，其包括：
    栅极；
    栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
    有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
    源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
  2. 如权利要求1所述的薄膜晶体管，其中所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；
    所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
  3. 如权利要求2所述的薄膜晶体管，其中所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度不同。
  4. 如权利要求2所述的薄膜晶体管，其中所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度相同。
  5. 如权利要求2所述的薄膜晶体管，其中任意两个所述掺氮氧化物半导体层的厚度相同。
  6. 如权利要求2所述的薄膜晶体管，其中任意两个所述掺氮氧化物半导体层的厚度不相同。
  7. 如权利要求2所述的薄膜晶体管，其中所述有源层包括：两个掺氮氧化物半导体层、和一个无氮氧化物半导体层。
  8. 如权利要求1所述的薄膜晶体管，其中所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。
  9. 如权利要求1所述的薄膜晶体管，其中所述栅极绝缘层的厚度在98nm至102nm之间。
  10. 如权利要求1所述的薄膜晶体管，其中所述栅极绝缘层的材质为氧化硅。
  11. 一种阵列基板，其包括：
    基板衬底，所述基板衬底上形成有多条数据线、多条扫描线、多个像素单元、和薄膜晶体管；
    所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；
    所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；以及
    所述薄膜晶体管，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管的漏极传输给对应的所述像素电极；
    其中，所述薄膜晶体管具体包括：
    栅极；
    栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
    有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
    源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
  12. 如权利要求11所述的阵列基板，其中所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；
    所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
  13. 如权利要求12所述的阵列基板，其中所述有源层包括：两个掺氮氧化物半导体层、和位于两个掺氮氧化物半导体层之间的一个无氮氧化物半导体层。
  14. 如权利要求13所述的阵列基板，其中所述掺氮氧化物半导体层与所述无氮氧化物半导体层的厚度相同。
  15. 如权利要求13所述的阵列基板，其中两个所述掺氮氧化物半导体层的厚度相同。
  16. 如权利要求13所述的阵列基板，其中所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。
  17. 一种液晶显示面板，其包括：
    彩膜基板；
    阵列基板，所述阵列基板包括多条数据线、多条扫描线、多个像素单元、和薄膜晶体管；以及
    液晶层，所述液晶层设置在所述彩膜基板和所述阵列基板之间的液晶层；
    所述数据线，用于传输数据信号给对应的所述薄膜晶体管的源极；
    所述扫描线，用于传输扫描信号给对应的所述薄膜晶体管的栅极；
    所述薄膜晶体管，用于根据扫描信号控制是否将数据信号通过该薄膜晶体管的漏极传输给对应的所述像素电极；
    其中，所述薄膜晶体管具体包括：
    栅极；
    栅极绝缘层，所述栅极绝缘层在所述栅极上方形成；
    有源层，所述有源层在所述栅极绝缘层上方形成，所述有源层由掺氮氧化物半导体层和无氮氧化物半导体层构成；以及
    源极和漏极，所述源极和所述漏极分别在所述有源层两侧形成。
  18. 如权利要求17所述的液晶显示面板，其中所述有源层包括：至少两个掺氮氧化物半导体层和至少一个无氮氧化物半导体层；所述无氮氧化物半导体层形成在两个相邻的所述掺氮氧化物半导体层之间。
  19. 如权利要求18所述的液晶显示面板，其中所述有源层包括：两个掺氮氧化物半导体层、和一个无氮氧化物半导体层。
  20. 如权利要求19所述的液晶显示面板，其中所述掺氮氧化物半导体层的厚度在8nm至12nm之间，所述无氮氧化物半导体层的厚度在8nm至12nm之间。
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