WO2016058172A1 - 一种coa基板及其制作方法 - Google Patents

一种coa基板及其制作方法 Download PDF

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Publication number
WO2016058172A1
WO2016058172A1 PCT/CN2014/088801 CN2014088801W WO2016058172A1 WO 2016058172 A1 WO2016058172 A1 WO 2016058172A1 CN 2014088801 W CN2014088801 W CN 2014088801W WO 2016058172 A1 WO2016058172 A1 WO 2016058172A1
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Prior art keywords
layer
metal layer
forming
substrate
color resist
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PCT/CN2014/088801
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English (en)
French (fr)
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熊源
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深圳市华星光电技术有限公司
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Priority to US14/405,888 priority Critical patent/US9971220B2/en
Publication of WO2016058172A1 publication Critical patent/WO2016058172A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a COA substrate and a method of fabricating the same.
  • COA Color Filter on Array
  • the substrate is formed by sequentially forming a thin film field effect transistor, a color resist layer and a pixel electrode on the substrate. Since it is necessary to provide a passivation layer between the drain and the color layer of the thin film field effect transistor, the process of the COA substrate becomes Complex, while increasing production costs.
  • the existing COA substrate has a small distance between the scan line and the data line, and there is a problem that the data line and the scan line are likely to have a capacitive coupling effect in the intersection region. Therefore, the line width of the intersection region must be compressed to avoid the generation of the capacitive coupling effect. .
  • the object of the present invention is to provide a COA substrate and a manufacturing method thereof, which solve the technical problem that the prior art needs to make a passivation layer more and increase the production cost.
  • the present invention constructs a method for fabricating a COA substrate, which includes:
  • a transparent conductive layer is formed on the passivation layer.
  • the step of forming an active layer on the color resist layer comprises:
  • the active layer is formed on the exposed gate insulating layer.
  • the method further comprises the steps of:
  • the mask has a first pattern, and the transparent conductive layer has a plurality of domains thereon, wherein the first pattern is consistent with a shape of a set region, and the set region is a domain and a domain on the transparent conductive layer An area formed by the dark lines at the interface, the projection of the set area on the second metal layer corresponding to the area of the first common electrode.
  • the method further comprises the steps of:
  • the first metal layer is patterned to form a second common electrode.
  • the first common electrode and the second common electrode are connected to the same common line.
  • the transparent conductive layer includes a pixel electrode, and a storage capacitor is formed between the pixel electrode and the first common electrode.
  • the invention constructs a method for fabricating a COA substrate, comprising the following steps:
  • a transparent conductive layer is formed on the passivation layer.
  • the step of forming a color resist layer on the gate insulating layer comprises:
  • the color resist layer at a position opposite to the gate is etched away to expose the gate insulating layer at the opposite position of the gate.
  • the step of forming an active layer on the color resist layer comprises:
  • the active layer is formed on the exposed gate insulating layer.
  • the manufacturing method further comprises the steps of:
  • the second metal layer is patterned using a mask to form a first common electrode on the second metal layer.
  • the method further comprises the steps of:
  • the mask has a first pattern, and the transparent conductive layer has a plurality of domains thereon, wherein the first pattern is consistent with a shape of a set region, and the set region is a domain and a domain on the transparent conductive layer An area formed by the dark lines at the interface, the projection of the set area on the second metal layer corresponding to the area of the first common electrode.
  • the method further comprises the steps of:
  • the first metal layer is patterned to form a second common electrode.
  • the first common electrode and the second common electrode are connected to the same common line.
  • the transparent conductive layer includes a pixel electrode, and a storage capacitor is formed between the pixel electrode and the first common electrode.
  • Another object of the present invention is to provide a COA substrate comprising:
  • a first metal layer on the substrate substrate including a gate region of the thin film field effect transistor
  • a gate insulating layer partially located on the first metal layer for isolating the first metal layer and the color resist layer;
  • the color resist layer is located on the gate insulating layer for forming a color resistance
  • An active layer partially located on the color resist layer for forming a channel
  • a second metal layer on the active layer including a drain region and a source region of the thin film field effect transistor
  • a passivation layer on the second metal layer wherein the passivation layer is formed with a via connecting the second metal layer;
  • a transparent conductive layer is on the passivation layer.
  • the gate insulating layer includes a first region, the color resist layer is located above a region other than the first region of the gate insulating layer, and the active layer is located in the first region Above; wherein the first region is a region on the gate insulating layer at a position opposite to the gate.
  • FIG. 1 is a schematic structural view of a prior art COA substrate
  • FIG. 2 is a flow chart of a method for fabricating a COA substrate of the present invention
  • FIG. 3 is a schematic view showing the structure of a COA substrate of the present invention.
  • FIG. 1 is a schematic structural view of a prior art COA substrate.
  • Prior art COA substrate as shown in Figure 1. As shown, the substrate substrate 11, the first metal layer 12, the gate insulating layer 13, the active layer 14, the second metal layer 15, the first passivation layer 16, the color resist layer 17, and the second passivation layer 18 are included. And a transparent conductive layer 20.
  • the first metal layer 12 is located on the base substrate 11 and includes a gate region of the thin film field effect transistor, and the first metal layer 12 is patterned to form a gate; A metal layer is etched away during the process.
  • the gate insulating layer 13 is partially located on the first metal layer 12 for isolating the drain and source of the first metal layer 12 and the thin film field effect transistor;
  • the active layer 14 is partially located on the gate insulating layer 13 for forming a channel between the drain and the source of the thin film field effect transistor;
  • the second metal layer 15 is disposed on the active layer 14 and includes a drain region and a source region of the thin film field effect transistor; the second metal layer 15 is patterned to form a drain and a source; The second metal layer other than the drain and source portions is etched away during the process.
  • the layer 20 is located on the second passivation layer 18 and includes a pixel electrode, and the pixel electrode and the drain are connected through a hole 19.
  • FIG. 2 is a flow chart of a method for fabricating a COA substrate according to the present invention.
  • the method for fabricating the COA substrate of the present invention comprises the following steps:
  • the step S202 is specifically: forming a gate by exposing, developing, and etching the first metal layer through a patterned mask, and the first metal layer other than the gate portion is etched away during the process.
  • the material of the metal layer may be chromium, molybdenum, aluminum or copper.
  • the first metal layer is patterned to form a second common electrode.
  • the color resist layer is used to form a color resist.
  • the step S204 specifically includes:
  • the active layer is used to form a channel between the drain and the source, and the material of the active layer is, for example, an amorphous silicon material.
  • the active layer is formed on the exposed gate insulating layer.
  • the step S206 is specifically: forming a drain and a source, and forming a second metal layer other than the drain and the source portions by exposing and etching the second metal layer through a patterned mask. The middle is etched away.
  • the second metal layer may be patterned using a mask to form a first common electrode on the second metal layer. Since the first common electrode is formed on the second metal layer, compared to the common electrode formed on the first metal layer, since one color resist layer is missing between the pixel electrode and the second metal layer, The distance is reduced, which increases the storage capacitance.
  • the first common electrode and the second common electrode are connected to the same common line.
  • the problem that it is difficult to provide a connecting line on the second metal layer is avoided.
  • the mask has a first pattern
  • the transparent conductive layer has a plurality of domains
  • the transparent electrodes on the transparent conductive layers of different domains extend in different directions, so that the pretilt angles of the liquid crystal molecules on different domains are different. , thereby reducing the crosstalk phenomenon of the liquid crystal display.
  • the first pattern is consistent with a shape of a set region
  • the set region is a region formed by a dark line at a boundary between a domain and a domain on the transparent conductive layer, such as a cross between a domain and a domain at a boundary.
  • the shape of the structure A projection of the set region on the second metal layer corresponds to a region of the first common electrode. Thereby the setting of the first common line does not affect the aperture ratio.
  • a scan line is formed on the first metal layer, and a data line is formed on the second metal layer.
  • the technical solution of the present invention is to make a color resist layer before the second metal layer is formed, thereby making the first metal The capacitance between the layer and the second metal layer is reduced, thereby avoiding a capacitive coupling effect between the data line and the scan line intersection.
  • the invention utilizes the second metal layer to block the color resist layer and the transparent conductive layer, which is different from the prior art by using the second passivation layer to block the color resist layer, thereby eliminating the process of a passivation layer.
  • the passivation layer serves to prevent the second metal layer from being oxidized.
  • the transparent conductive layer may be formed on the passivation layer provided with via holes by a sputter coating method.
  • the transparent conductive layer includes a pixel electrode.
  • a storage capacitor is formed between the pixel electrode and the first common electrode.
  • FIG. 3 is a schematic structural view of a COA substrate according to the present invention.
  • the present invention further provides a COA substrate, including: a substrate substrate 21, a first metal layer 22, a gate insulating layer 23, a color resist layer 24, an active layer 25, and a second metal layer 26. Passivation layer 27, transparent conductive layer 28;
  • the first metal layer 22 is disposed on the base substrate 21, including a gate region of the thin film field effect transistor; and the first metal layer except the portion of the gate region is etched away during the process, 3 Only the schematic diagram after the completion of the process is given.
  • the gate insulating layer 23 is partially located on the first metal layer 22, and the remaining portion is located on the base substrate 21 for isolating the first metal layer 22 and the color resist layer 24; a color resist layer 24 on the gate insulating layer 23 for forming a color resist;
  • the active layer 25 is partially located on the color resist layer 24 for forming a channel
  • the second metal layer 26 is disposed on the active layer 25, including a drain region and a source region of the thin film field effect transistor;
  • the passivation layer 27 is located on the second metal layer 26, and the passivation layer 27 is formed with a via 29 connecting the second metal layer 26;
  • the transparent conductive layer 28 is located on the passivation layer 27.
  • the gate insulating layer 23 includes a first region 30 (shown by a broken line in the figure), and the first region 30 is a region on the gate insulating layer opposite to the gate,
  • the color resist layer 24 is located above a region other than the first region 30 of the gate insulating layer 23, and the active layer 25 is located above the first region 30.
  • the second metal layer 26 further includes a first common electrode.
  • the first common electrode is obtained by patterning the second metal layer using a mask.
  • the mask has a first pattern
  • the transparent conductive layer has a plurality of domains
  • the transparent electrodes on the transparent conductive layers of different domains extend in different directions, so that the pretilt angles of the liquid crystal molecules on different domains are different. , thereby reducing the crosstalk phenomenon of the liquid crystal display.
  • the first pattern is consistent with a shape of a set region, wherein the set region is a region formed by a dark line at a boundary between a domain and a domain on the transparent conductive layer, and the set region is in the second metal
  • the projection on the layer corresponds to the area of the first common electrode.
  • the first metal layer further includes a second common electrode.
  • the first common electrode and the second common electrode are connected to the same common line.
  • the transparent conductive layer includes a pixel electrode, and a storage capacitor is formed between the pixel electrode and the first common electrode.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种COA基板及其制作方法，制作方法包括：在衬底基板（21）上依次形成第一金属层（22）、栅绝缘层（23）、色阻层（24）、有源层（25）、第二金属层（26）、钝化层（27）、连接第二金属层（26）的过孔（29）、在钝化层（27）上形成透明导电层（28）；对第一金属层（22）进行图形化处理形成栅极；对第二金属层（26）进行图形化处理形成漏极和源极。这种COA基板及其制作方法，在第二金属层（26）之前制作色阻层（24）。

Description

一种COA基板及其制作方法 技术领域
本发明涉及液晶显示器技术领域，特别是涉及一种COA基板及其制作方法。
 背景技术
COA（Color Filter on Array）基板是在阵列基板上制作彩色滤色膜，由于解决了液晶显示器对位要求高的问题，同时提高了开口率，成为液晶显示领域主要的研究方向之一。现有的COA 基板是在基板上依次形成薄膜场效应晶体管，色阻层，像素电极，由于需要在薄膜场效应晶体管的漏极与彩色层之间需要设置一层钝化层，从而使得COA基板的制程变得复杂，同时增加生产成本。同时现有的COA基板由于扫描线和数据线的距离比较小，还存在数据线和扫描线在交叉区域容易产生电容耦合效应的问题，因此必须压缩交叉区域的线宽以避免电容耦合效应的产生。
因此，有必要提供一种COA基板及其制作方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种COA基板及其制作方法，以解决现有技术需要多制作一层钝化层，增加生产成本的技术问题。
 技术解决方案
为解决上述技术问题，本发明构造了一种COA基板的制作方法，其包括：
提供一衬底基板；
在所述衬底基板上形成第一金属层，对所述第一金属层进行图形化处理形成栅极；
在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层；
在整个所述栅绝缘层上形成所述色阻层，将与所述栅极相对位置处的色阻层刻蚀掉，以使所述栅极相对位置处的栅绝缘层暴露；
在所述色阻层上形成有源层；
在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层，使用掩模板对所述第二金属层进行图形化处理形成漏极、源极和第一公共电极；
在所述第二金属层上形成钝化层；
在所述钝化层上形成连接所述第二金属层的过孔；以及
在所述钝化层上形成透明导电层。
在本发明的COA基板的制作方法中，所述在所述色阻层上形成有源层步骤包括：
在所述暴露的栅绝缘层上形成所述有源层。
在本发明的COA基板的制作方法中，所述方法还包括步骤：
所述掩模板具有第一图案，所述透明导电层上具有多个畴，其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
在本发明的COA基板的制作方法中，所述方法还包括步骤：
对所述第一金属层进行图形化处理，以形成第二公共电极。
在本发明的COA基板的制作方法中，所述第一公共电极和所述第二公共电极连接同一公共线。
在本发明的COA基板的制作方法中，所述透明导电层包括像素电极，所述像素电极与所述第一公共电极之间形成存储电容。
本发明构造了一种COA基板的制作方法，包括以下步骤：
提供一衬底基板；
在所述衬底基板上形成第一金属层，对所述第一金属层进行图形化处理形成栅极；
在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层；
在所述栅绝缘层上形成色阻层；
在所述色阻层上形成有源层；
在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层，对所述第二金属层进行图形化处理形成漏极和源极；
在所述第二金属层上形成钝化层；
在所述钝化层上形成连接所述第二金属层的过孔；以及
在所述钝化层上形成透明导电层。
在本发明的COA基板的制作方法中，所述在所述栅绝缘层上形成色阻层的步骤包括：
在整个所述栅绝缘层上形成所述色阻层；
将与所述栅极相对位置处的色阻层刻蚀掉，以使所述栅极相对位置处的栅绝缘层暴露。
在本发明的COA基板的制作方法中，所述在所述色阻层上形成有源层步骤包括：
在所述暴露的栅绝缘层上形成所述有源层。
在本发明的COA基板的制作方法中，所述制作方法还包括步骤：
使用掩模板对所述第二金属层进行图形化处理，以在所述第二金属层上形成第一公共电极。
在本发明的COA基板的制作方法中，所述方法还包括步骤：
所述掩模板具有第一图案，所述透明导电层上具有多个畴，其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
在本发明的COA基板的制作方法中，所述方法还包括步骤：
对所述第一金属层进行图形化处理，以形成第二公共电极。
在本发明的COA基板的制作方法中，所述第一公共电极和所述第二公共电极连接同一公共线。
在本发明的COA基板的制作方法中，所述透明导电层包括像素电极，所述像素电极与所述第一公共电极之间形成存储电容。
本发明的另一个目的在于提供一种COA基板，其包括：
衬底基板；
第一金属层，位于所述衬底基板上，包括薄膜场效应晶体管的栅极区；
栅极绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和色阻层；
所述色阻层，位于所述栅绝缘层上，用于形成色阻；
有源层，部分位于所述色阻层上，用于形成沟道；
第二金属层，位于所述有源层上，包括薄膜场效应晶体管的漏极区和源极区；
钝化层，位于所述第二金属层上，所述钝化层上形成有连接所述第二金属层的过孔；以及
透明导电层，位于所述钝化层上。
在本发明的COA基板中，所述栅绝缘层包括第一区域，所述色阻层位于所述栅绝缘层的第一区域以外的区域的上方，所述有源层位于所述第一区域的上方；其中所述第一区域为所述栅绝缘层上与所述栅极相对位置处的区域。
 有益效果
本发明的COA基板及其制作方法，通过在第二金属层之前制作色阻层，较现有技术节省了一层钝化层，从而降低生产成本。
 附图说明
图1为现有技术的COA基板的结构示意图；
图2为本发明的COA基板的制作方法流程图；
图3为本发明的COA基板的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为现有技术的COA基板的结构示意图。
现有技术的COA基板，如图1 所示，包括衬底基板11、第一金属层12、栅极绝缘层13、有源层14、第二金属层15、第一钝化层16；色阻层17、第二钝化层18、透明导电层20。
所述第一金属层12位于所述衬底基板11上，包括薄膜场效应晶体管的栅极区，对所述第一金属层12进行图形化处理形成栅极；所述栅极部分以外的第一金属层在制程过程中被刻蚀掉。所述栅极绝缘层13，部分位于所述第一金属层12上，用于隔离所述第一金属层12和所述薄膜场效应晶体管的漏极和源极；
所述有源层14，部分位于所述栅极绝缘层13上，用于形成所述薄膜场效应晶体管的漏极和源极之间的沟道；
所述第二金属层15，位于所述有源层14上，包括薄膜场效应晶体管的漏极区和源极区；对所述第二金属层15进行图形化处理形成漏极和源极；所述漏极和源极部分以外的第二金属层在制程过程中被刻蚀掉。
第一钝化层16，位于所述第二金属层15上，用于将所述漏极和所述源极分别与所述色组层17隔离；以及所述色阻层17，位于所述第一钝化层16上，用于形成色阻；第二钝化层18，位于所述色阻层17上，用隔离所述色阻层17和所述透明导电层20；所述透明导电层20，位于所述第二钝化层18上，其包括像素电极，所述像素电极与所述漏极之间经过孔19连接。
请参照图2，图2为本发明的COA基板的制作方法流程图。
本发明的COA基板的制作方法，如图2所示，包括以下步骤：
S201、提供一衬底基板；
S202、在所述衬底基板上形成第一金属层，对所述第一金属层进行图形化处理形成栅极；
所述步骤S202具体是通过带有图形的掩模板，对所述第一金属层经过曝光显影、刻蚀后形成栅极，栅极部分以外的第一金属层在制程过程中被刻蚀掉。该金属层的材料可为铬、钼、铝或铜等。优选地，对所述第一金属层进行图形化处理以形成第二公共电极。
S203、在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层；
S204、在所述栅绝缘层上形成色阻层；
所述色阻层用于形成色阻，优选地S204步骤具体包括：
S2041、在整个所述栅绝缘层上形成所述色阻层；
S2042、将与所述栅极相对位置处的色阻层刻蚀掉，以使所述栅极相对位置处的栅绝缘层暴露。
S205、在所述色阻层上形成有源层；
所述有源层用于形成漏极和源极之间的沟道，所述有源层的材料譬如为非晶硅材料。所述有源层是在所述暴露的栅绝缘层上形成的。
S206、在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层，对所述第二金属层进行图形化处理形成漏极和源极；
所述步骤S206具体是通过带有图形的掩模板，对所述第二金属层经过曝光显影、刻蚀后形成漏极和源极，漏极和源极部分以外的第二金属层在制程过程中被刻蚀掉。使用掩模板可对所述第二金属层进行图形化处理，以在所述第二金属层上形成第一公共电极。由于第一公共电极形成在所述第二金属层上，相比于公共电极形成在第一金属层上，由于在像素电极和第二金属层之间少了一层色阻层，使得两者的距离降低，从而增大了存储电容。
优选地，所述第一公共电极和所述第二公共电极连接同一公共线。避免了在所述第二金属层上设置连接线比较困难的问题。
优选地，所述掩模板具有第一图案，所述透明导电层上具有多个畴，不同畴的透明导电层上的透明电极延伸方向不同，从而使得不同畴上的液晶分子的预倾斜角度不同，进而降低了液晶显示器的串扰现象。其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，譬如畴与畴交界处的暗纹成十字架结构的形状。所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。从而使得第一公共线的设置不会影响开口率。
同时，所述第一金属层上形成有扫描线，所述第二金属层上形成有数据线，由于本发明的技术方案是在制作第二金属层之前制作色阻层，从而使得第一金属层和第二金属层之间的电容降低，从而避免了所述数据线和所述扫描线交叉区域产生电容耦合效应。
本发明利用所述第二金属层阻隔所述色阻层和透明导电层，区别于现有技术利用第二钝化层阻隔所述色阻层，从而省去了一道钝化层的制程工序。
S207、在所述第二金属层上形成钝化层；
所述钝化层用于防止所述第二金属层被氧化。
S208、在所述钝化层上形成连接所述第二金属层的过孔；以及
S209、在所述钝化层上形成透明导电层。
可以利用溅射镀膜法，在设置有过孔的所述钝化层上形成所述透明导电层。所述透明导电层包括像素电极。优选地，所述像素电极与所述第一公共电极之间可形成存储电容。
本发明的COA基板的制作方法，通过在第二金属层之前制作色阻层，较现有技术节省了一层钝化层，从而降低生产成本。
请参照图3，图3为本发明的COA基板的结构示意图。
如图3所示，本发明还提供一种COA基板，包括：衬底基板21、第一金属层22、栅极绝缘层23、色阻层24、有源层25、第二金属层26、钝化层27、透明导电层28；
所述第一金属层22，位于所述衬底基板21上，包括薄膜场效应晶体管的栅极区；由于所述栅极区部分以外的第一金属层在制程过程中被刻蚀掉，图3仅给出制程完后的示意图。
所述栅极绝缘层23，部分位于所述第一金属层22上，其余部分位于所述衬底基板21上，用于隔离所述第一金属层22和所述色阻层24；所述色阻层24，位于所述栅绝缘层23上，用于形成色阻；
所述有源层25，部分位于所述色阻层24上，用于形成沟道；
所述第二金属层26，位于所述有源层25上，包括薄膜场效应晶体管的漏极区和源极区；
所述钝化层27，位于所述第二金属层26上，所述钝化层27上形成有连接所述第二金属层26的过孔29；以及
所述透明导电层28，位于所述钝化层27上。
优选地，所述栅绝缘层23的包括第一区域30（如图中虚线所示），所述第一区域30为所述栅绝缘层上与所述栅极相对位置处的区域，所述色阻层24位于所述栅绝缘层23的第一区域30以外的区域的上方，所述有源层25位于所述第一区域30的上方。
优选地，所述第二金属层26还包括第一公共电极。
优选地，第一公共电极是通过使用掩模板对所述第二金属层进行图形化处理得到的。
优选地，所述掩模板具有第一图案，所述透明导电层上具有多个畴，不同畴的透明导电层上的透明电极延伸方向不同，从而使得不同畴上的液晶分子的预倾斜角度不同，进而降低了液晶显示器的串扰现象。其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
优选地，所述第一金属层还包括第二公共电极。
优选地，所述第一公共电极和所述第二公共电极连接同一公共线。
优选地，所述透明导电层包括像素电极，所述像素电极与所述第一公共电极之间形成存储电容。
对比图1，不难发现，本发明的COA基板，通过在第二金属层之前制作色阻层，较现有技术节省了一层钝化层，从而降低生产成本。本发明的COA基板的制作方法请参照上文。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种COA基板的制作方法，其包括：
    提供一衬底基板；
    在所述衬底基板上形成第一金属层，对所述第一金属层进行图形化处理形成栅极；
    在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层；
    在整个所述栅绝缘层上形成所述色阻层，将与所述栅极相对位置处的色阻层刻蚀掉，以使所述栅极相对位置处的栅绝缘层暴露；
    在所述色阻层上形成有源层；
    在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层，使用掩模板对所述第二金属层进行图形化处理形成漏极、源极和第一公共电极；
    在所述第二金属层上形成钝化层；
    在所述钝化层上形成连接所述第二金属层的过孔；以及
    在所述钝化层上形成透明导电层。
  2. 根据权1所述的COA基板的制作方法，其中所述在所述色阻层上形成有源层步骤包括：
    在所述暴露的栅绝缘层上形成所述有源层。
  3. 根据权1所述的COA基板的制作方法，其中所述方法还包括步骤：
    所述掩模板具有第一图案，所述透明导电层上具有多个畴，其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
  4. 根据权1所述的COA基板的制作方法，其中所述方法还包括步骤：
    对所述第一金属层进行图形化处理，以形成第二公共电极。
  5. 根据权4所述的COA基板的制作方法，其中所述第一公共电极和所述第二公共电极连接同一公共线。
  6. 根据权1所述的COA基板的制作方法，其中所述透明导电层包括像素电极，所述像素电极与所述第一公共电极之间形成存储电容。
  7. 一种COA基板的制作方法，其包括：
    提供一衬底基板；
    在所述衬底基板上形成第一金属层，对所述第一金属层进行图形化处理形成栅极；
    在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层；
    在所述栅绝缘层上形成色阻层；
    在所述色阻层上形成有源层；
    在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层，对所述第二金属层进行图形化处理形成漏极和源极；
    在所述第二金属层上形成钝化层；
    在所述钝化层上形成连接所述第二金属层的过孔；以及
    在所述钝化层上形成透明导电层。
  8. 根据权7所述的COA基板的制作方法，其中所述在所述栅绝缘层上形成色阻层的步骤包括：
    在整个所述栅绝缘层上形成所述色阻层；
    将与所述栅极相对位置处的色阻层刻蚀掉，以使所述栅极相对位置处的栅绝缘层暴露。
  9. 根据权8所述的COA基板的制作方法，其中所述在所述色阻层上形成有源层步骤包括：
    在所述暴露的栅绝缘层上形成所述有源层。
  10. 根据权7所述的COA基板的制作方法，其中所述制作方法还包括步骤：
    使用掩模板对所述第二金属层进行图形化处理，以在所述第二金属层上形成第一公共电极。
  11. 根据权10所述的COA基板的制作方法，其中所述方法还包括步骤：
    所述掩模板具有第一图案，所述透明导电层上具有多个畴，其中所述第一图案与设定区域的形状一致，所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域，所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
  12. 根据权10所述的COA基板的制作方法，其中所述方法还包括步骤：
    对所述第一金属层进行图形化处理，以形成第二公共电极。
  13. 根据权12所述的COA基板的制作方法，其中所述第一公共电极和所述第二公共电极连接同一公共线。
  14. 根据权10所述的COA基板的制作方法，其中所述透明导电层包括像素电极，所述像素电极与所述第一公共电极之间形成存储电容。
  15. 一种COA 基板，其包括：
    衬底基板；
    第一金属层，位于所述衬底基板上，包括薄膜场效应晶体管的栅极区；
    栅极绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和色阻层；
    所述色阻层，位于所述栅绝缘层上，用于形成色阻；
    有源层，部分位于所述色阻层上，用于形成沟道；
    第二金属层，位于所述有源层上，包括薄膜场效应晶体管的漏极区和源极区；
    钝化层，位于所述第二金属层上，所述钝化层上形成有连接所述第二金属层的过孔；以及
    透明导电层，位于所述钝化层上。
  16. 根据权15所述的COA 基板，其中所述栅绝缘层包括第一区域，所述色阻层位于所述栅绝缘层的第一区域以外的区域的上方，所述有源层位于所述第一区域的上方；其中所述第一区域为所述栅绝缘层上与所述栅极相对位置处的区域。
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