CN104319277B - 一种coa基板及其制作方法 - Google Patents
一种coa基板及其制作方法 Download PDFInfo
- Publication number
- CN104319277B CN104319277B CN201410542924.4A CN201410542924A CN104319277B CN 104319277 B CN104319277 B CN 104319277B CN 201410542924 A CN201410542924 A CN 201410542924A CN 104319277 B CN104319277 B CN 104319277B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal layer
- color blocking
- gate insulation
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 91
- 238000009413 insulation Methods 0.000 claims abstract description 34
- 230000000903 blocking effect Effects 0.000 claims description 50
- 238000002161 passivation Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 29
- 238000002360 preparation method Methods 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000001808 coupling effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Abstract
本发明提供一种COA基板及其制作方法,所述方法包括:提供一衬底基板;在所述衬底基板上形成第一金属层,对所述第一金属层进行图形化处理形成栅极;在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层;在所述栅绝缘层上形成色阻层;在所述色阻层上形成有源层;在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层,对所述第二金属层进行图形化处理形成漏极和源极;在所述第二金属层上形成钝化层;在所述钝化层上形成连接所述第二金属层的过孔;以及在所述钝化层上形成透明导电层。本发明的COA基板及其制作方法,通过在第二金属层之前制作色阻层,较现有技术节省了一层钝化层,从而降低生产成本。
Description
【技术领域】
本发明涉及液晶显示器技术领域,特别是涉及一种COA基板及其制作方法。
【背景技术】
COA(Color Filter on Array)基板是在阵列基板上制作彩色滤色膜,由于解决了液晶显示器对位要求高的问题,同时提高了开口率,成为液晶显示领域主要的研究方向之一。现有的COA基板是在基板上依次形成薄膜场效应晶体管,色阻层,像素电极,由于需要在薄膜场效应晶体管的漏极与彩色层之间需要设置一层钝化层,从而使得COA基板的制程变得复杂,同时增加生产成本。同时现有的COA基板由于扫描线和数据线的距离比较小,还存在数据线和扫描线在交叉区域容易产生电容耦合效应的问题,因此必须压缩交叉区域的线宽以避免电容耦合效应的产生。
因此,有必要提供一种COA基板及其制作方法,以解决现有技术所存在的问题。
【发明内容】
本发明的目的在于提供一种COA基板及其制作方法,以解决现有技术需要多制作一层钝化层,增加生产成本的技术问题。
为解决上述技术问题,本发明构造了一种COA基板的制作方法,包括以下步骤:
提供一衬底基板;
在所述衬底基板上形成第一金属层,对所述第一金属层进行图形化处理形成栅极;
在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层;
在所述栅绝缘层上形成色阻层;
在所述色阻层上形成有源层;
在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层,对所述第二金属层进行图形化处理形成漏极和源极;
在所述第二金属层上形成钝化层;
在所述钝化层上形成连接所述第二金属层的过孔;以及
在所述钝化层上形成透明导电层。
在本发明的COA基板的制作方法中,所述在所述栅绝缘层上形成色阻层的步骤包括:
在整个所述栅绝缘层上形成所述色阻层;
将与所述栅极相对位置处的色阻层刻蚀掉,以使所述栅极相对位置处的栅绝缘层暴露。
在本发明的COA基板的制作方法中,所述在所述色阻层上形成有源层步骤包括:
在所述暴露的栅绝缘层上形成所述有源层。
在本发明的COA基板的制作方法中,所述制作方法还包括步骤:
使用掩模板对所述第二金属层进行图形化处理,以在所述第二金属层上形成第一公共电极。
在本发明的COA基板的制作方法中,所述方法还包括步骤:
所述掩模板具有第一图案,所述透明导电层上具有多个畴,其中所述第一图案与设定区域的形状一致,所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域,所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
在本发明的COA基板的制作方法中,所述方法还包括步骤:
对所述第一金属层进行图形化处理,以形成第二公共电极。
在本发明的COA基板的制作方法中,所述第一公共电极和所述第二公共电极连接同一公共线。
在本发明的COA基板的制作方法中,所述透明导电层包括像素电极,所述像素电极与所述第一公共电极之间形成存储电容。
本发明的另一个目的在于提供一种COA基板,其包括:
衬底基板;
第一金属层,位于所述衬底基板上,包括薄膜场效应晶体管的栅极区;
栅绝缘层,部分位于所述第一金属层上,用于隔离所述第一金属层和色阻层;
所述色阻层,位于所述栅绝缘层上,用于形成色阻;
有源层,部分位于所述色阻层上,用于形成沟道;
第二金属层,位于所述有源层上,包括薄膜场效应晶体管的漏极区和源极区;
钝化层,位于所述第二金属层上,所述钝化层上形成有连接所述第二金属层的过孔;以及
透明导电层,位于所述钝化层上。
在本发明的COA基板中,所述栅绝缘层包括第一区域,所述色阻层位于所述栅绝缘层的第一区域以外的区域的上方,所述有源层位于所述第一区域的上方;其中所述第一区域为所述栅绝缘层上与所述栅极相对位置处的区域。
本发明的COA基板及其制作方法,通过在第二金属层之前制作色阻层,较现有技术节省了一层钝化层,从而降低生产成本。
【附图说明】
图1为现有技术的COA基板的结构示意图;
图2为本发明的COA基板的制作方法流程图;
图3为本发明的COA基板的结构示意图。
【具体实施方式】
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是以相同标号表示。
请参照图1,图1为现有技术的COA基板的结构示意图。现有技术的COA基板,如图1所示,包括衬底基板11、第一金属层12、栅极绝缘层13、有源层14、第二金属层15、第一钝化层16;色阻层17、第二钝化层18、透明导电层20。
所述第一金属层12位于所述衬底基板11上,包括薄膜场效应晶体管的栅极区,对所述第一金属层12进行图形化处理形成栅极;所述栅极部分以外的第一金属层在制程过程中被刻蚀掉。所述栅极绝缘层13,部分位于所述第一金属层12上,用于隔离所述第一金属层12和所述薄膜场效应晶体管的漏极和源极;
所述有源层14,部分位于所述栅极绝缘层13上,用于形成所述薄膜场效应晶体管的漏极和源极之间的沟道;
所述第二金属层15,位于所述有源层14上,包括薄膜场效应晶体管的漏极区和源极区;对所述第二金属层15进行图形化处理形成漏极和源极;所述漏极和源极部分以外的第二金属层在制程过程中被刻蚀掉。
第一钝化层16,位于所述第二金属层15上,用于将所述漏极和所述源极分别与所述色组层17隔离;以及所述色阻层17,位于所述第一钝化层16上,用于形成色阻;第二钝化层18,位于所述色阻层17上,用隔离所述色阻层17和所述透明导电层20;所述透明导电层20,位于所述第二钝化层18上,其包括像素电极,所述像素电极与所述漏极之间经过孔19连接。
请参照图2,图2为本发明的COA基板的制作方法流程图。
本发明的COA基板的制作方法,如图2所示,包括以下步骤:
S201、提供一衬底基板;
S202、在所述衬底基板上形成第一金属层,对所述第一金属层进行图形化处理形成栅极;
所述步骤S202具体是通过带有图形的掩模板,对所述第一金属层经过曝光显影、刻蚀后形成栅极,栅极部分以外的第一金属层在制程过程中被刻蚀掉。该金属层的材料可为铬、钼、铝或铜等。优选地,对所述第一金属层进行图形化处理以形成第二公共电极。
S203、在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层;
S204、在所述栅绝缘层上形成色阻层;
所述色阻层用于形成色阻,优选地S204步骤具体包括:
S2041、在整个所述栅绝缘层上形成所述色阻层;
S2042、将与所述栅极相对位置处的色阻层刻蚀掉,以使所述栅极相对位置处的栅绝缘层暴露。
S205、在所述色阻层上形成有源层;
所述有源层用于形成漏极和源极之间的沟道,所述有源层的材料譬如为非晶硅材料。所述有源层是在所述暴露的栅绝缘层上形成的。
S206、在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层,对所述第二金属层进行图形化处理形成漏极和源极;
所述步骤S206具体是通过带有图形的掩模板,对所述第二金属层经过曝光显影、刻蚀后形成漏极和源极,漏极和源极部分以外的第二金属层在制程过程中被刻蚀掉。使用掩模板可对所述第二金属层进行图形化处理,以在所述第二金属层上形成第一公共电极。由于第一公共电极形成在所述第二金属层上,相比于公共电极形成在第一金属层上,由于在像素电极和第二金属层之间少了一层色阻层,使得两者的距离降低,从而增大了存储电容。
优选地,所述第一公共电极和所述第二公共电极连接同一公共线。避免了在所述第二金属层上设置连接线比较困难的问题。
优选地,所述掩模板具有第一图案,所述透明导电层上具有多个畴,不同畴的透明导电层上的透明电极延伸方向不同,从而使得不同畴上的液晶分子的预倾斜角度不同,进而降低了液晶显示器的串扰现象。其中所述第一图案与设定区域的形状一致,所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域,譬如畴与畴交界处的暗纹成十字架结构的形状。所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。从而使得第一公共线的设置不会影响开口率。
同时,所述第一金属层上形成有扫描线,所述第二金属层上形成有数据线,由于本发明的技术方案是在制作第二金属层之前制作色阻层,从而使得第一金属层和第二金属层之间的电容降低,从而避免了所述数据线和所述扫描线交叉区域产生电容耦合效应。
本发明利用所述第二金属层阻隔所述色阻层和透明导电层,区别于现有技术利用第二钝化层阻隔所述色阻层,从而省去了一道钝化层的制程工序。
S207、在所述第二金属层上形成钝化层;
所述钝化层用于防止所述第二金属层被氧化。
S208、在所述钝化层上形成连接所述第二金属层的过孔;以及
S209、在所述钝化层上形成透明导电层。
可以利用溅射镀膜法,在设置有过孔的所述钝化层上形成所述透明导电层。所述透明导电层包括像素电极。优选地,所述像素电极与所述第一公共电极之间可形成存储电容。
本发明的COA基板的制作方法,通过在第二金属层之前制作色阻层,较现有技术节省了一层钝化层,从而降低生产成本。
请参照图3,图3为本发明的COA基板的结构示意图。
如图3所示,本发明还提供一种COA基板,包括:衬底基板21、第一金属层22、栅绝缘层23、色阻层24、有源层25、第二金属层26、钝化层27、透明导电层28;
所述第一金属层22,位于所述衬底基板21上,包括薄膜场效应晶体管的栅极区;由于所述栅极区部分以外的第一金属层在制程过程中被刻蚀掉,图3仅给出制程完后的示意图。
所述栅绝缘层23,部分位于所述第一金属层22上,其余部分位于所述衬底基板21上,用于隔离所述第一金属层22和所述色阻层24;所述色阻层24,位于所述栅绝缘层23上,用于形成色阻;
所述有源层25,部分位于所述色阻层24上,用于形成沟道;
所述第二金属层26,位于所述有源层25上,包括薄膜场效应晶体管的漏极区和源极区;
所述钝化层27,位于所述第二金属层26上,所述钝化层27上形成有连接所述第二金属层26的过孔29;以及
所述透明导电层28,位于所述钝化层27上。
优选地,所述栅绝缘层23的包括第一区域30(如图中虚线所示),所述第一区域30为所述栅绝缘层上与所述栅极相对位置处的区域,所述色阻层24位于所述栅绝缘层23的第一区域30以外的区域的上方,所述有源层25位于所述第一区域30的上方。
优选地,所述第二金属层26还包括第一公共电极。
优选地,第一公共电极是通过使用掩模板对所述第二金属层进行图形化处理得到的。
优选地,所述掩模板具有第一图案,所述透明导电层上具有多个畴,不同畴的透明导电层上的透明电极延伸方向不同,从而使得不同畴上的液晶分子的预倾斜角度不同,进而降低了液晶显示器的串扰现象。其中所述第一图案与设定区域的形状一致,所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域,所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
优选地,所述第一金属层还包括第二公共电极。
优选地,所述第一公共电极和所述第二公共电极连接同一公共线。
优选地,所述透明导电层包括像素电极,所述像素电极与所述第一公共电极之间形成存储电容。
对比图1,不难发现,本发明的COA基板,通过在第二金属层之前制作色阻层,较现有技术节省了一层钝化层,从而降低生产成本。本发明的COA基板的制作方法请参照上文。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (8)
1.一种COA基板的制作方法,其特征在于,包括:
提供一衬底基板;
在所述衬底基板上形成第一金属层,对所述第一金属层进行图形化处理形成栅极;
在所述栅极及未被所述栅极覆盖的衬底基板上形成栅绝缘层;
在所述栅绝缘层上形成色阻层;
在所述色阻层上形成有源层;
在所述有源层上以及未被所述有源层覆盖的色阻层上形成第二金属层,对所述第二金属层进行图形化处理形成漏极和源极;使用掩模板对所述第二金属层进行图形化处理,以在所述第二金属层上形成第一公共电极;
在所述第二金属层上形成钝化层;
在所述钝化层上形成连接所述第二金属层的过孔;以及
在所述钝化层上形成透明导电层;所述透明导电层包括像素电极,所述像素电极与所述第一公共电极之间形成存储电容。
2.根据权利要求1所述的COA基板的制作方法,其特征在于,所述在所述栅绝缘层上形成色阻层的步骤包括:
在整个所述栅绝缘层上形成所述色阻层;
将与所述栅极相对位置处的色阻层刻蚀掉,以使所述栅极相对位置处的栅绝缘层暴露。
3.根据权利要求2所述的COA基板的制作方法,其特征在于,所述在所述色阻层上形成有源层步骤包括:
在所述暴露的栅绝缘层上形成所述有源层。
4.根据权利要求1所述的COA基板的制作方法,其特征在于,所述方法还包括步骤:
所述掩模板具有第一图案,所述透明导电层上具有多个畴,其中所述第一图案与设定区域的形状一致,所述设定区域为所述透明导电层上的畴与畴交界处的暗纹形成的区域,所述设定区域在所述第二金属层上的投影对应所述第一公共电极的区域。
5.根据权利要求1所述的COA基板的制作方法,其特征在于,所述方法还包括步骤:
对所述第一金属层进行图形化处理,以形成第二公共电极。
6.根据权利要求5所述的COA基板的制作方法,其特征在于,所述第一公共电极和所述第二公共电极连接同一公共线。
7.一种COA基板,其特征在于,包括:
衬底基板;
第一金属层,位于所述衬底基板上,包括薄膜场效应晶体管 的栅极区;
栅绝缘层,部分位于所述第一金属层上,用于隔离所述第一金属层和色阻层;
所述色阻层,位于所述栅绝缘层上,用于形成色阻;
有源层,部分位于所述色阻层上,用于形成沟道;
第二金属层,位于所述有源层上,包括薄膜场效应晶体管的漏极区、源极区以及第一公共电极;
钝化层,位于所述第二金属层上,所述钝化层上形成有连接所述第二金属层的过孔;以及
透明导电层,位于所述钝化层上,所述透明导电层包括像素电极,所述像素电极与所述第一公共电极之间形成存储电容。
8.根据权利要求7所述的COA基板,其特征在于,所述栅绝缘层包括第一区域,所述色阻层位于所述栅绝缘层的第一区域以外的区域的上方,所述有源层位于所述第一区域的上方;其中所述第一区域为所述栅绝缘层上与所述栅极相对位置处的区域。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410542924.4A CN104319277B (zh) | 2014-10-15 | 2014-10-15 | 一种coa基板及其制作方法 |
US14/405,888 US9971220B2 (en) | 2014-10-15 | 2014-10-17 | COA substrate and manufacturing method thereof |
PCT/CN2014/088801 WO2016058172A1 (zh) | 2014-10-15 | 2014-10-17 | 一种coa基板及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410542924.4A CN104319277B (zh) | 2014-10-15 | 2014-10-15 | 一种coa基板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104319277A CN104319277A (zh) | 2015-01-28 |
CN104319277B true CN104319277B (zh) | 2017-02-08 |
Family
ID=52374486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410542924.4A Active CN104319277B (zh) | 2014-10-15 | 2014-10-15 | 一种coa基板及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9971220B2 (zh) |
CN (1) | CN104319277B (zh) |
WO (1) | WO2016058172A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6636249B2 (ja) | 2015-01-30 | 2020-01-29 | 株式会社小松製作所 | プラズマトーチ用交換部品ユニット |
CN105137683B (zh) * | 2015-07-24 | 2018-01-12 | 深圳市华星光电技术有限公司 | 一种像素单元、coa基板和液晶显示面板 |
CN105044973B (zh) * | 2015-08-27 | 2018-07-10 | 深圳市华星光电技术有限公司 | Coa型液晶显示面板 |
CN105785678B (zh) * | 2016-05-12 | 2019-04-30 | 深圳市华星光电技术有限公司 | Tft基板的断线修复方法 |
CN106206618A (zh) * | 2016-08-30 | 2016-12-07 | 深圳市华星光电技术有限公司 | 阵列基板及其制作方法和液晶显示装置 |
CN106646969A (zh) * | 2016-11-22 | 2017-05-10 | 深圳市华星光电技术有限公司 | Coa型液晶面板的制作方法及coa型液晶面板 |
CN107026177B (zh) | 2017-03-31 | 2020-02-28 | 京东方科技集团股份有限公司 | 一种coa基板及其制备方法、显示装置 |
CN110047939B (zh) * | 2019-04-01 | 2022-04-26 | Tcl华星光电技术有限公司 | Coa基板及coa基板色阻层膜厚测量方法 |
CN113707668B (zh) * | 2020-05-19 | 2022-06-14 | 荣耀终端有限公司 | 阵列基板及其制备方法、液晶面板和显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1542520A (zh) * | 2003-04-03 | 2004-11-03 | 统宝光电股份有限公司 | 液晶显示器 |
CN102768432A (zh) * | 2012-07-20 | 2012-11-07 | 深圳市华星光电技术有限公司 | 彩色滤光阵列基板及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100884541B1 (ko) * | 2002-12-10 | 2009-02-18 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
TWI222546B (en) * | 2003-05-28 | 2004-10-21 | Au Optronics Corp | TFT LCD and manufacturing method thereof |
KR100729089B1 (ko) * | 2005-08-26 | 2007-06-14 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그 제조방법 |
KR101386189B1 (ko) * | 2008-03-20 | 2014-04-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
US9153751B2 (en) | 2012-07-20 | 2015-10-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Color filter on array substrate and a manufacturing method for the same |
CN103219283A (zh) * | 2013-03-19 | 2013-07-24 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
-
2014
- 2014-10-15 CN CN201410542924.4A patent/CN104319277B/zh active Active
- 2014-10-17 US US14/405,888 patent/US9971220B2/en active Active
- 2014-10-17 WO PCT/CN2014/088801 patent/WO2016058172A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1542520A (zh) * | 2003-04-03 | 2004-11-03 | 统宝光电股份有限公司 | 液晶显示器 |
CN102768432A (zh) * | 2012-07-20 | 2012-11-07 | 深圳市华星光电技术有限公司 | 彩色滤光阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104319277A (zh) | 2015-01-28 |
US9971220B2 (en) | 2018-05-15 |
WO2016058172A1 (zh) | 2016-04-21 |
US20160266425A1 (en) | 2016-09-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104319277B (zh) | 一种coa基板及其制作方法 | |
CN103226272B (zh) | 一种阵列基板及其制备方法、显示装置 | |
CN104238207A (zh) | 阵列基板及其制备方法、显示装置 | |
CN105867689B (zh) | 一种触控显示基板的制作方法及触控显示装置的阵列基板 | |
CN103715137B (zh) | 阵列基板及其制造方法、显示装置 | |
WO2017008472A1 (zh) | Ads阵列基板及其制作方法、显示器件 | |
CN103021940B (zh) | 阵列基板及其制造方法、显示装置 | |
CN104914640A (zh) | 一种阵列基板及其制作方法、显示面板、显示装置 | |
CN105470269A (zh) | Tft阵列基板及其制作方法 | |
US10833107B2 (en) | Thin film transistor, manufacturing method therefor, array substrate and display device | |
CN102929060B (zh) | 阵列基板及其制作方法、显示装置 | |
CN106024813B (zh) | 一种低温多晶硅tft阵列基板的制作方法及相应装置 | |
US9443983B2 (en) | Pixel unit, array substrate and manufacturing method thereof, and display device | |
CN103676354A (zh) | 电极结构及制备方法、阵列基板及制备方法和显示装置 | |
CN101093843A (zh) | 一种平板显示器中的电极结构及其制造方法 | |
CN104345511B (zh) | 像素结构及其制造方法、显示面板 | |
CN104133313A (zh) | 阵列基板及其制备方法、液晶显示装置 | |
CN104779203B (zh) | 一种阵列基板及其制造方法、显示装置 | |
CN105161455A (zh) | 一种ffs阵列基板及其制造方法和显示装置 | |
CN106229310A (zh) | 阵列基板及其制作方法 | |
CN102629590B (zh) | 一种薄膜晶体管阵列基板及其制作方法 | |
CN104597647B (zh) | 一种液晶显示面板及其制作方法 | |
CN104617049B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN105870136A (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN107978608A (zh) | Ips型薄膜晶体管阵列基板及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |