WO2016051796A1 - 研磨パッド - Google Patents

研磨パッド Download PDF

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Publication number
WO2016051796A1
WO2016051796A1 PCT/JP2015/004980 JP2015004980W WO2016051796A1 WO 2016051796 A1 WO2016051796 A1 WO 2016051796A1 JP 2015004980 W JP2015004980 W JP 2015004980W WO 2016051796 A1 WO2016051796 A1 WO 2016051796A1
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Prior art keywords
polishing
polishing pad
layer
mpa
present
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PCT/JP2015/004980
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English (en)
French (fr)
Japanese (ja)
Inventor
橘　俊光
玉青 福島
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日東電工株式会社
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Publication of WO2016051796A1 publication Critical patent/WO2016051796A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a laminated polishing pad used when polishing unevenness on a surface of a material to be polished such as a silicon wafer or a quartz wafer used for a semiconductor element or the like by chemical mechanical polishing (CMP).
  • CMP chemical mechanical polishing
  • CMP chemical mechanical polishing
  • polishing is performed using a slurry-like abrasive (hereinafter referred to as slurry) in which abrasive grains (abrasive particles) are dispersed in a state where the surface to be polished of the wafer is pressed against the polishing surface of the polishing pad.
  • slurry a slurry-like abrasive
  • abrasive grains abrasive particles
  • CMP is a polishing technique in which the surface of a wafer is chemically melted with a processing liquid and mechanically shaved with abrasive grains, that is, a chemical removal action with a processing liquid and a mechanical removal action with abrasive grains. It is widely used because it hardly causes a work-affected layer (a part of the surface different from the inside caused by processing).
  • a polishing apparatus generally used in CMP is a rotatable polishing surface plate that supports a polishing pad, a support base (polishing head) that supports an object to be polished (wafer), and a uniform pressure for the wafer.
  • a backing material and an abrasive supply mechanism are provided.
  • the polishing pad is attached to the polishing surface plate by pasting with a double-sided tape.
  • the polishing surface plate and the support base are arranged so that the polishing pad supported by the polishing table and the object to be polished face each other, and each has a rotation shaft.
  • the support base is provided with a pressurizing mechanism for pressing the object to be polished against the polishing pad.
  • Polishing for smoothing and mirror-finishing a substrate such as a silicon wafer is performed using such a polishing apparatus, with the polishing pad fixed to the polishing surface plate and rotated, and placed on the polishing surface plate.
  • the wafer surface is polished and flattened and smoothed by applying a polishing slurry to the gap between the polishing pad and the wafer.
  • Non-woven polishing pad is made of polyester felt (with a random structure) impregnated with polyurethane, is porous, has moderate elasticity, has excellent high polishing rate and flatness, and can be processed with little sagging. It has become. Widely used for primary polishing of silicon substrates.
  • a suede type polishing pad is a base material in which a polyester felt is impregnated with polyurethane, a foam layer is grown in the polyurethane, the surface portion is removed, and an opening is provided in the foam layer (this layer is called a nap layer).
  • the polishing is progressed when the abrasive material used in the finish polishing acts between the workpiece and the inner surface of the foam layer. Although it is frequently used for CMP and a surface having no damage can be obtained, peripheral sag is likely to occur over time.
  • polishing pads such as foamed urethane sheets.
  • the polishing operation in the CMP polishing step is performed by holding abrasive grains in a slurry in which fine particles (abrasive grains) are suspended on a polishing pad to be used. Therefore, the higher the abrasive density of the polishing pad, the higher the polishing rate. For this reason, a porous material having a large number of pores is used as the polishing pad. By holding the abrasive grains in the pores, the holding density of the abrasive grains is increased and the polishing rate is increased. ing. In such a porous material, it is effective to increase the number of holes and reduce the diameter of the holes in order to increase the retention density of the abrasive grains.
  • Patent Document 1 discloses a polishing pad in which hollow microspheres or water-soluble polymer powder is dispersed in a matrix resin such as polyurethane is also known.
  • a required characteristic of the polishing pad in addition to a local flattening ability, an ability to polish the entire wafer uniformly is required.
  • a soft cushion layer is usually separately provided on the back surface of the polyurethane foam sheet, and polishing is performed. For this reason, the planarization ability of the polyurethane foam sheet on the wafer surface is substantially reduced, and there is a limit to the improvement of processing accuracy.
  • One of the objects of the present invention is to provide a polishing pad capable of uniformly polishing the entire wafer.
  • Another object of the present invention is to provide a polishing pad that can perform polishing with high processing accuracy.
  • the polishing pad of the present invention comprises at least (A) a surface polishing layer, (B) an adhesive layer and (C) a cushion layer, and the respective layers are laminated in the order of (A) / (B) / (C),
  • the compression ratio of the (A) surface polishing layer is 0.3% or more and 3.0% or less, and satisfies the relationship of (C) the compression ratio of the cushion layer> (A) the compression ratio of the surface polishing layer. is there.
  • the polishing pad of the present invention can uniformly polish the entire object to be polished (wafer).
  • the polishing pad of the present invention can perform polishing with high processing accuracy.
  • (A) by controlling the thickness of the surface polishing layer the compression rate of the resulting laminated polishing pad can be easily controlled, and the molecular weight of the material constituting the surface polishing layer can be reduced. Even if the viscosity and foaming method (control of foaming ratio, etc.) are not controlled, fine compression control is possible.
  • the polishing pad of this invention can also planarize the to-be-polished object (wafer) locally.
  • the block diagram of the polishing pad which concerns on one Embodiment of this invention is shown.
  • the block diagram of the polishing pad which concerns on other one Embodiment of this invention is shown.
  • 1 shows a schematic view of a polishing pad, a CMP apparatus and CMP.
  • the schematic showing the measuring method of the compressibility in the present invention is shown.
  • the measurement result of the compressibility in the polishing pad concerning the present invention is shown.
  • the polishing pad 1 of the present invention comprises at least (A) a surface polishing layer 2, (B) an adhesive layer 3 and (C) a cushion layer 4, and the respective layers are in the order of (A) / (B) / (C).
  • the compression ratio of the (A) surface polishing layer 2 is 0.3% or more and 3.0% or less, and the compression ratio of the (C) cushion layer 4> compression of the (A) surface polishing layer 2 It is characterized by satisfying the rate relationship. With this configuration, the polishing pad of the present invention is excellent in cushioning properties and can uniformly polish the entire object to be polished (wafer).
  • the polishing pad of the present invention can suppress a decrease in surface hardness and can provide polishing with high processing accuracy. Furthermore, with this configuration, the polishing pad of the present invention can be finely controlled by controlling the thickness of the (A) surface polishing layer in the laminate, and the wafer surface can be locally planarized. It becomes.
  • the surface polishing layer (polishing layer having a polishing surface for polishing a material to be polished) of the present invention is not particularly limited, but is a sintered porous sheet of ultra high molecular weight polyethylene (UHMWPE) powder. What is comprised from this is preferable.
  • the viscosity average molecular weight (M ⁇ ) of the UHMWPE is preferably 500,000 to 15 million, more preferably 1 million to 12 million.
  • the viscosity average molecular weight (M ⁇ ) of UHMWPE may be evaluated by a viscosity method which is a general measurement method. For example, M ⁇ can be calculated from the intrinsic viscosity [ ⁇ ] measured based on JIS K 7367-3: 1999. That's fine.
  • the sintered porous sheet of the UHMWPE powder can be produced, for example, by the method described in JP-A-8-169971. Specifically, it can be produced as follows. First, UHMWPE powder is filled into a mold, and then sintered in a steam atmosphere heated to a temperature equal to or higher than the melting point of UHMWPE to form a block-shaped molded body, which is then cooled, and this molded body has a predetermined thickness. Is cut into a sheet.
  • UHMWPE powder (average particle size is usually 30 to 200 ⁇ m) is filled in a mold, and then this is sintered in a steam atmosphere heated to the melting point of UHMWPE or higher to form a block-shaped molded body. And In this way, the UHMWPE powder is filled in a mold and sintered in a heated steam atmosphere, and therefore, a mold having at least one opening (for heating steam introduction) is used.
  • the time required for sintering varies depending on the filling amount of powder, the temperature of water vapor, etc., but is usually about 1 to 12 hours.
  • the water vapor used at this time is in a pressurized state in order to raise the temperature to the melting point of UHMWPE or more, and can easily enter between the UHMWPE powders filled in the mold.
  • the powder was filled in a mold, the mold was placed in a pressure vessel, subjected to a degassing operation to reduce the pressure, and then heated. You may make it sinter in water vapor
  • the degree of reduced pressure at this time is not particularly limited, but is preferably about 1 to 100 mmHg.
  • the sintering of the UHMWPE powder filled in the mold is performed by providing a steam inlet pipe and its open / close valve in the pressure vessel, degassing the air between the powders, and stopping the decompression or continuing the decompression.
  • the method can be carried out by opening a steam valve and introducing heated steam.
  • the UHMWPE powder is heated to a temperature above its melting point, but its melt viscosity is high, so it does not flow very much, and part or most of the powder shape is maintained.
  • a heat-fused porous block-shaped molded body (the non-contact portions between the powders become micropores of the porous molded body) is formed.
  • the pressure shall be about 10 kg / cm ⁇ 2 > or less normally.
  • cooling After cooling as described above, cool. In cooling, it is preferable to avoid rapid cooling in order to prevent cracks from forming in the block-shaped molded body.
  • a method of cooling by allowing to stand at room temperature can be employed. The cooling may be performed while the block-shaped molded body is placed in a mold, or may be performed after being removed from the mold.
  • a porous sheet can be obtained by cutting to predetermined thickness with a lathe.
  • the pore size and porosity of the porous sheet obtained by the above method are determined by the particle size of the UHMWPE powder used and the presence or absence of pressure during sintering. If the other conditions are the same, a porous sheet with a larger porosity and a higher porosity can be obtained as the particle size of the powder used is larger. Further, when no pressure is applied during sintering, a porous sheet having a large pore diameter and a high porosity can be obtained as compared with the case where pressure is applied. Furthermore, when the pressure is applied during sintering, the higher the pressure, the smaller the pore diameter, and the lower the porosity.
  • the UHMWPE porous sheet obtained by the above method maintains a part or most of the shape of the adjacent UHMWPE powder, and the powders are heat-fused at the contact site to form a sheet shape. And it has the microstructure which makes the non-contact part of powder mutual micropores.
  • the microstructure of the porous sheet is obtained by, for example, cutting the porous sheet along the thickness direction, and observing the cut surface with a scanning electron microscope (the magnification can be appropriately set, but usually about 100 to 1000). Can be).
  • the UHMWPE porous sheet obtained by the above method may be subjected to a hydrophilic treatment.
  • the hydrophilic treatment method include surfactant impregnation, corona treatment, plasma treatment, sulfonation treatment, hydrophilic monomer graft polymerization treatment, and the like. Among them, graft polymerization treatment is excellent in hydrophilicity. This is preferable because the treatment effect is stable.
  • the surfactant is not particularly limited, and examples thereof include cationic surfactant.
  • the compression ratio of the surface polishing layer is not particularly limited, but is 0.3% or more and 3.0% or less from the point that the obtained laminated polishing pad can be uniformly polished and the planarization ability is enhanced.
  • the compression rate refers to a rate of contraction when a certain load is applied to a molded body having a predetermined shape.
  • the measuring method of the compression rate in the present invention is as described in Examples described later.
  • the thickness of the surface polishing layer is not particularly limited, but is preferably from 0.1 mm to 2.5 mm, more preferably from 0.1 mm to 2.0 mm.
  • the average pore size of the surface polishing layer is not particularly limited, but is preferably 0.05 to 30 ⁇ m, more preferably 0.1 to 25 ⁇ m, and more preferably 1.0 to 20 ⁇ m from the viewpoint of excellent functions required for the polishing layer. Is more preferable.
  • the average pore diameter can be measured in accordance with the provisions of ASTM (American Society for Test Materials) F316-86.
  • Porometer fluorine-based solvent (trade name “FC-40”, product name “FC-40”, surface tension 1.6 ⁇ 10 ⁇ 2 N / m) used as a solvent for impregnation) and the like) can be used.
  • the porosity of the surface polishing layer is not particularly limited, but is preferably from 5 to 60%, more preferably from 10 to 50%, and even more preferably from 15 to 40% from the viewpoint of increasing polishing uniformity and processing accuracy. . That is, when the porosity is less than 5%, the holding ability of the polishing slurry is lowered and the polishing rate cannot be increased. Conversely, when the porosity exceeds 60%, the mechanical strength of the polymer porous sheet is low. This is because the sheet itself is greatly deformed by the pressure during polishing and it is difficult to obtain a smooth polished surface.
  • the hardness of the surface polishing layer is not particularly limited, and is preferably 20 or more and 100 or less from the viewpoint of high polishing accuracy, and is 20, 25, 29, 30, 31, 35, 39, 40, 41, 45, 49, 50, 51, 55, 59, 60, 61, 65, 70, 75, 80, 81, 85, 89, 90, 95 and 100, or two arbitrarily selected from these values It can be a range of values (the values at the end points of the range may be included or excluded), more preferably 25 or more and less than 97, and even more preferably 45 or more and 96 or less.
  • hardness means durometer hardness as defined in JIS K 6253-3: 2012. The durometer hardness can be measured by using a rubber hardness meter (type A, manufactured by Teclock Corporation).
  • the surface roughness (arithmetic mean roughness (Ra)) of the surface polishing layer is not particularly limited, but is preferably 0.1 ⁇ m or more and 5.0 ⁇ m or less, 0.1 ⁇ m, 0.3 ⁇ m, 0.7 ⁇ m, 0 0.9 ⁇ m, 1.0 ⁇ m, 1.1 ⁇ m, 1.2 ⁇ m, 1.4 ⁇ m, 1.5 ⁇ m, 1.9 ⁇ m, 2.0 ⁇ m, 2.1 ⁇ m, 2.4 ⁇ m, 2.5 ⁇ m, 2.7 ⁇ m, 2.9 ⁇ m , 3.0 ⁇ m, 3.1 ⁇ m, 3.5 ⁇ m, 3.9 ⁇ m, 4.0 ⁇ m, 4.1 ⁇ m, 4.4 ⁇ m, 4.5 ⁇ m, 4.9 ⁇ m and 5.0 ⁇ m, or any value from these
  • the range of the two values selected in the above is preferably 1.0 ⁇ m or more and 3.0 ⁇ m or
  • the surface roughness (Ra) is small, so that the roughness of the object to be polished can be reduced.
  • the arithmetic average roughness means a value specified in JIS B 0601: 2001.
  • the arithmetic average roughness can be measured using a stylus type surface roughness meter (Tokyo Seimitsu Co., Ltd., Surfcom 550A).
  • the measurement conditions can be a tip diameter R of 250 ⁇ m, a speed of 0.3 mm / sec, and a measurement length of 4 mm.
  • the physical properties such as the compression ratio of the (A) surface polishing layer can be obtained by appropriately changing the particle size of the resin powder of the material, the presence or absence of pressure during sintering, and the like in the above-described manufacturing method.
  • a commercially available product may be used as the sintered porous sheet of the UHMWPE powder.
  • Commercially available products include the Sunmap (registered trademark) series (for example, Sunmap HP-5320 (M ⁇ : 3 million, average pore diameter: 24 ⁇ m, porosity: 38%, Shore D hardness: 42, Ra: 1.2 ⁇ m), Sunmap LC (M ⁇ : 3 million, average pore diameter: 17 ⁇ m, porosity: 30%, Shore D hardness: 48, Ra: 2.0 ⁇ m), etc.) (Nitto Denko), Sun Fine ( (Registered trademark) AQ series (for example, Sun Fine AQ-100 (M ⁇ : 3.3 million), Sunfine AQ-800 (M ⁇ : 4.5 million), etc.) (above, manufactured by Asahi Kasei Chemicals) and the like.
  • Sunmap registered trademark
  • Sunmap HP-5320 M ⁇ : 3 million, average pore diameter: 24 ⁇ m, porosity: 38%, Shore D hardness: 42, Ra: 1.2
  • Adhesive Layer The adhesive used in the present invention is not particularly limited, and examples thereof include a pressure sensitive adhesive and a hot melt adhesive, and a hot melt adhesive is preferable.
  • the said adhesive agent may be used individually by 1 type, and may mix and use 2 or more types.
  • the pressure-sensitive adhesive examples include a (meth) acrylate (co) polymer; a synthetic or natural rubber such as polyisoprene, polybutadiene, and chloroprene; a base polymer, and the base polymer. And the like obtained by blending a tackifier, a tackifier, a crosslinking agent, a stabilizer and the like.
  • the rubber or polymer may be modified as long as the effects of the present invention are not hindered.
  • the hot melt adhesive is not particularly limited, and any known material can be used without any particular limitation.
  • the adhesive include polyester resins, ethylene-vinyl acetate (EVA) resins (for example, ethylene / glycidyl dimethacrylate (GMA) / vinyl acetate copolymers), polyamide resins, polyurethane resins, and polyolefin resins.
  • EVA ethylene-vinyl acetate
  • EVA ethylene-vinyl acetate
  • EVA ethylene-vinyl acetate
  • EVA ethylene-vinyl acetate
  • It does not specifically limit as polyolefin-type resin For example, polyethylene, a polypropylene, etc. are mentioned.
  • the resin may be modified as long as the effects of the present invention are not hindered.
  • hot melt adhesives composed of polyolefin resins are particularly preferred.
  • a two-component curing type epoxy adhesive, silicone adhesive, etc. May be used.
  • a commercially available product can be used as the adhesive.
  • Examples of commercially available products include “Bond First” (manufactured by Sumitomo Chemical) and “Admer” (manufactured by Mitsui Chemicals).
  • the adhesive layer may have a reinforcing sheet as a core material.
  • the adhesive layer may be laminated in the order of adhesive layer / reinforcing sheet / adhesive layer (not shown).
  • the reinforcing sheet is not particularly limited, but polyethylene terephthalate is preferable.
  • the thickness of the reinforcing sheet is preferably 12 to 250 ⁇ m, and more preferably 25 to 100 ⁇ m.
  • the thickness of the adhesive layer is not particularly limited, but is preferably 0.01 to 0.5 mm.
  • the constituent material of the (C) cushion layer used in the present invention is not particularly limited, and polymer resin foams such as urethane foam and polyethylene foam; fiber nonwoven fabrics such as polyester nonwoven fabric, nylon nonwoven fabric, and acrylic nonwoven fabric A rubbery resin such as butadiene rubber and isoprene rubber, and a photosensitive resin. These may be used individually by 1 type, and 2 or more types may be mixed and used for them. Of these, urethane foam is preferred. A commercially available product can be used for the cushion layer.
  • the cushion layer may be a single layer or may be used by stacking the same or different types of constituent materials, but is preferably a single layer.
  • the manufacturing method of a cushion layer is not specifically limited, A well-known method can be used.
  • the tensile strength of the cushion layer is not particularly limited, but is preferably 0.50 to 10.0 MPa, 0.50 MPa, 0.80 MPa, 0.90 MPa, 1.0 MPa, 1.1 MPa, 1.5 MPa, 1.9 MPa, 2.0 MPa, 2.1 MPa, 2.3 MPa, 2.4 MPa, 2.7 MPa, 2.9 MPa, 3.0 MPa, 3.1 MPa, 3.4 MPa, 3.5 MPa, 3.9 MPa, 4.
  • the tensile strength means a value defined in JIS K 6251 (2010).
  • the tensile elongation of the cushion layer is not particularly limited, but is preferably 50 to 200%, more preferably 100 to 180%.
  • the tensile elongation means a value defined in JIS K 6251 (2010).
  • the compression rate of the cushion layer is not particularly limited, but if the compression rate is too small, the stress concentration that the polishing layer gives to the surface to be polished of the polishing material cannot be diffused well, and the in-plane uniformity of the surface to be polished Since it tends to deteriorate the properties, it is preferably 1.0% or more and 40.0% or less, 1.0%, 2.0%, 4.0%, 5.0%, 6.0%, 7. 0%, 9.0%, 10.0%, 11.0%, 12.0%, 13.0%, 15.0%, 18.0%, 19.0%, 20.0%, 21. 0%, 23.0%, 25.0%, 28.0%, 29.0%, 30.0%, 31.0%, 35.0%, 38.0%, 39.0% and 40.
  • the hardness of the cushion layer is not particularly limited, but is preferably 1 to 80, more preferably 3 to 60, and still more preferably 5 to 50.
  • a polyurethane resin has a hard segment formed by the reaction of a polyisocyanate compound and a polyamine compound and a soft segment formed by a polyol compound.
  • the hard segment hydrogen bonds are formed between the urethane bonds and the cohesive force is increased, so that the hard segment exhibits rigidity and high crystallinity.
  • the soft segment the hydrogen bond is hardly formed and the cohesive force is weakened, so that the soft segment is easily deformed and has low crystallinity. Therefore, physical properties such as compression ratio of the polyurethane resin can be adjusted by the balance between the hard segment and the soft segment.
  • a commercially available product can be used for the cushion layer.
  • Examples of commercially available products include the PORON (registered trademark) series made of urethane foam (for example, PORON H-24 (tensile elongation: 150%, tensile strength: 0.88 MPa), PORON H-32 (tensile elongation: 155%). , Tensile strength: 1.44 MPa), PORON H-48 (tensile elongation: 140%, tensile strength: 2.35 MPa), etc. (above, manufactured by Roger Sinoac).
  • the thickness of the cushion layer is not particularly limited, but is preferably from 0.1 mm to 3.0 mm, and more preferably from 0.3 mm to 2.5 mm.
  • the thickness of the (C) cushion layer may be about 0.3 to 20 times, or about 0.5 to 5 times the thickness of the (A) surface polishing layer. It may be about 0.8 to 2.5 times.
  • the polishing pad of the present invention satisfies the relationship of (C) the compression rate of the cushion layer> (A) the compression rate of the surface polishing layer, and (C) the compression rate of the cushion layer is uniform in polishing.
  • the compression ratio of the laminated body after being laminated is not particularly limited, but if the compression ratio is too low, it becomes difficult to follow the warp of the object to be polished, and in-plane uniformity is achieved. If the compression rate is too high, the flatness at the local level difference of the patterned wafer is prevented from being lowered.
  • From 1.0% to 30.0% is preferable, and 1.0% 2.0%, 3.0%, 5.0%, 6.0%, 7.0%, 9.0%, 10.0%, 11.0%, 12.0%, 13.0% 15.0%, 18.0%, 19.0%, 20.0%, 21.0%, 23.0%, 25.0%, 28.0%, 29.0% and 30.0% Or a range of two values arbitrarily selected from these values (the values at the end points of the range may be included or excluded) More preferably 2.0% or more 35.0% or less, more preferably 30.0% or less than 5.0%.
  • the thickness of the laminated polishing pad of the present invention is not particularly limited, but is preferably from 0.3 mm to 7.0 mm, more preferably from 0.5 mm to 6.0 mm, and even more preferably from 1.0 mm to 4.0 mm.
  • the hardness of the laminated body after being laminated is not particularly limited, and is preferably 20 or more and 100 or less, 20, 25, 29, 30, 31, 35, 39, 40, 41, 45, 49, 50, 51, 55, 59, 60, 61, 65, 70, 75, 80, 81, 85, 89, 90, 95 and 100, or two values arbitrarily selected from these
  • the range (the value of the end point of the range may be included or excluded) may be included, and is preferably 25 or more and less than 97.
  • the hardness of the laminate is the same definition as the hardness of the surface polishing layer, and can be measured in the same manner as the hardness of the surface polishing layer.
  • the manufacturing method of the polishing pad is not particularly limited, and can be manufactured according to a known method.
  • a manufacturing method it can manufacture, for example by apply
  • a hot-melt adhesive is applied to the material constituting the surface polishing layer, (C) a cushion layer is laminated, and heat treatment is performed to bond them together.
  • the temperature of the heat treatment is not particularly limited, but is preferably 50 to 200 ° C, more preferably 70 to 180 ° C, and further preferably 90 to 150 ° C.
  • the heat treatment time is not particularly limited, but is preferably 5 to 180 minutes, more preferably 10 to 120 minutes, and further preferably 30 to 120 minutes.
  • the heating device used for the heat treatment is not particularly limited. In the said manufacturing method, you may perform a drying process further as needed.
  • the method for the drying treatment is not particularly limited, but it may be dried by a drying apparatus at about 70 to 150 ° C.
  • FIG. 2 shows another embodiment of the polishing pad of the present invention.
  • the polishing pad 1 of the present invention may have (C) a double-sided tape 5 attached to the cushion layer 4 as shown in FIG.
  • the double-sided tape 5 includes, for example, a flexible film base, and an adhesive layer on both sides of the base.
  • the flexible film is not particularly limited, and examples thereof include polyethylene terephthalate (hereinafter abbreviated as PET) films.
  • PET polyethylene terephthalate
  • the adhesive used for the adhesive layer is not particularly limited.
  • the adhesive may be the same as the adhesive layer (B) of the polishing pad 1 of the present invention, but a rubber-based adhesive or an acrylic adhesive may be used. preferable.
  • the double-sided tape 5 is bonded to the cushion layer 4 with an adhesive layer on one side of the substrate, and the adhesive layer on the other side is covered with release paper.
  • the laminated polishing pad of the present invention is not particularly limited, but is preferably used for a CMP apparatus.
  • the CMP apparatus is not particularly limited, and a polishing apparatus generally used in CMP can be used.
  • a rotatable polishing surface plate 6 that supports the polishing pad 1 a support base 9 (polishing head) that supports an object to be polished 8 (wafer), and a wafer are uniformly pressed.
  • a backing material and a supply mechanism for the abrasive 7 are provided.
  • the polishing pad 1 is attached to the polishing surface plate 6 by sticking with a double-sided tape, for example.
  • the polishing surface plate 6 and the support base 9 are disposed so that the polishing pad 1 and the material to be polished 8 supported by each of the polishing surface plate 6 and the support base 9 are opposed to each other, and are provided with rotating shafts 10 and 11 respectively. Further, the support base 9 is provided with a pressurizing mechanism for pressing the workpiece 8 against the polishing pad 1.
  • the abrasive grains (abrasive particles) used together with the laminated polishing pad of the present invention are not particularly limited as long as the effects of the present invention are not hindered.
  • silica, alumina, ceria (cerium oxide), zirconia, titania ( Titanium oxide), germania and the like may be used alone or in combination of two or more.
  • the polishing slurry used together with the multilayer polishing pad of the present invention is not particularly limited as long as the effects of the present invention are not hindered.
  • the abrasive grains are dispersed in water or a water-based aqueous solution, and the surface of the wafer is further dispersed.
  • a reaction liquid for example, sodium hydroxide, ammonia, etc. that chemically reacts with the substance is added.
  • a silicon wafer, a crystal wafer or the like used for a semiconductor element or the like is preferably a workpiece (abrasive material).
  • the present invention includes embodiments in which the above configurations are combined in various ways within the technical scope of the present invention as long as the effects of the present invention are exhibited.
  • Example 1 Sintered porous sheet of ultra high molecular weight polyethylene powder (trade name: Sunmap LC, M ⁇ : 3 million, average pore diameter: 17 ⁇ m, porosity: 30%, Shore D hardness: 48, Ra: 2.0 ⁇ m, thickness: 2.0 mm, manufactured by Nitto Denko) and microcell polymer sheet (trade name: PORON (registered trademark), model number: H-48 2.0 mm, material: urethane foam, tensile strength: 2.35 MPa, tensile elongation: 150% , Thickness: 2.0 mm, manufactured by Roger Sinoac) was bonded together with a hot melt adhesive to obtain a laminate. The hot melt adhesive was melted with a press heated to 120 ° C.
  • Example 2 Instead of the sunmap LC, a sunmap prepared using an ultra-high molecular weight polyethylene resin having a molecular weight of 3 million, a high porosity product having a porosity of 50% and a thickness of 2.0 mm was used. A laminated polishing pad was obtained in the same manner as Example 1 except for the above.
  • Examples 3 to 7 A laminated polishing pad was obtained in the same manner as in Example 1 using a sintered porous sheet of ultrahigh molecular weight polyethylene powder having the same physical properties except that only the film thickness was changed to that shown in Table 2. About each obtained lamination polishing pad, the compressibility, hardness, and film thickness were measured. The results are shown in Table 2 below, and the measurement results of the compression ratio and the film thickness are plotted in FIG. In the figure, LC represents the sun map LC, and the numerical value next to the LC represents the thickness of the sun map LC.
  • the laminated polishing pad of the present invention can be controlled with a fine compression ratio by controlling the thickness of the (A) surface polishing layer in the laminate. Since the compressibility of the laminated polishing pad can be finely controlled, the entire wafer can be polished uniformly and the wafer surface can be locally planarized.
  • Tegramin-30 (table plate diameter (diameter) 300 mm, manufactured by Marumoto Struers) was used, and the size of the polishing pad to be measured was 300 mm in diameter.
  • a quartz substrate is first placed in a workpiece having a diameter of 25 mm, embedded in an epoxy resin (trade name: EpoFix Kit, manufactured by Struers), and then a SiC water resistant abrasive paper # 200. (FEPA standard, manufactured by Struers), the surface was laid out (rotation speed: 300 rpm, polishing pressure: 30 N, polishing time: 10 seconds). At this time, polishing was performed only with water without adding abrasive grains.
  • the laminated polishing pad of Example 4 was placed on a surface plate and rotated as a running-in operation (rotation speed: 150 rpm, pressure: 20 N, rotation time: 5 minutes). Subsequently, the quartz substrate was polished using the laminated polishing pad (rotational speed: 150 rpm, polishing pressure: 20 N, polishing time: 5 minutes). The rate of adding abrasive grains (polishing slurry) during polishing was 2 mL / min.
  • the surface of the quartz substrate was observed using a laser microscope (trade name: wide-field confocal laser microscope HD100D, manufactured by Laser Tec) (magnification 20 times), and the surface roughness Ra of the quartz substrate (JIS B 0601: The arithmetic average roughness defined in 2001) was measured.
  • the amount of polishing was measured before the polishing (after faceting), by scratching the quartz substrate and measuring the depth with the laser microscope (50 times magnification), and for the amount shaved in the depth direction. did. After the polishing, it was confirmed that the quartz substrate polished using the laminated polishing pad of Example 4 was uniformly polished as a whole.
  • Polishability was evaluated by the same method as described above except that Sunmap LC alone was used instead of the laminated polishing pad of Example 4 described above.
  • the laminated polishing pad of the present invention can smooth the surface with a small amount of polishing and can perform polishing with high processing accuracy. Furthermore, the laminated polishing pad of the present invention was able to uniformly polish the entire object to be polished.
  • the polishing pad of the present invention can obtain both performance of uniformity and flatness by using a hard material for the surface layer and further using a cushion material for the lower layer in order to ensure followability to the wafer surface. it can. Further, by controlling the thickness of the sintered porous sheet of ultra high molecular weight polyethylene powder, it is possible to control the compression rate finely. Furthermore, the polishing pad of the present invention can perform polishing with high processing accuracy.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
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KR20200028097A (ko) * 2018-09-06 2020-03-16 에스케이실트론 주식회사 웨이퍼 연마 장치용 연마패드
JP2020055091A (ja) * 2018-10-04 2020-04-09 株式会社ディスコ 被加工物の研削方法
TWI818029B (zh) * 2019-05-31 2023-10-11 智勝科技股份有限公司 研磨墊、研磨墊的製造方法以及研磨方法
US20230211454A1 (en) 2020-05-28 2023-07-06 Tokuyama Corporation Laminated polishing pad
JP6927617B1 (ja) * 2020-11-19 2021-09-01 不二越機械工業株式会社 ワーク研磨装置およびトップリング用樹脂マット体
KR102489678B1 (ko) * 2020-12-07 2023-01-17 에스케이엔펄스 주식회사 연마패드용 시트, 연마패드 및 반도체 소자의 제조방법

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