JP6671908B2 - 研磨パッド - Google Patents
研磨パッド Download PDFInfo
- Publication number
- JP6671908B2 JP6671908B2 JP2015193635A JP2015193635A JP6671908B2 JP 6671908 B2 JP6671908 B2 JP 6671908B2 JP 2015193635 A JP2015193635 A JP 2015193635A JP 2015193635 A JP2015193635 A JP 2015193635A JP 6671908 B2 JP6671908 B2 JP 6671908B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing pad
- layer
- compression ratio
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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- 239000012790 adhesive layer Substances 0.000 claims description 16
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- 238000012545 processing Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- 238000003825 pressing Methods 0.000 description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- 230000008018 melting Effects 0.000 description 5
- 239000004745 nonwoven fabric Substances 0.000 description 5
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
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- 230000006837 decompression Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
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- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 238000010559 graft polymerization reaction Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
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- 229920003122 (meth)acrylate-based copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
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- 229920010741 Ultra High Molecular Weight Polyethylene (UHMWPE) Polymers 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
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- 239000003381 stabilizer Substances 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014203088 | 2014-10-01 | ||
JP2014203088 | 2014-10-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019201444A Division JP2020037182A (ja) | 2014-10-01 | 2019-11-06 | 研磨パッド |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016068255A JP2016068255A (ja) | 2016-05-09 |
JP6671908B2 true JP6671908B2 (ja) | 2020-03-25 |
Family
ID=55629860
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015193635A Active JP6671908B2 (ja) | 2014-10-01 | 2015-09-30 | 研磨パッド |
JP2019201444A Withdrawn JP2020037182A (ja) | 2014-10-01 | 2019-11-06 | 研磨パッド |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019201444A Withdrawn JP2020037182A (ja) | 2014-10-01 | 2019-11-06 | 研磨パッド |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP6671908B2 (zh) |
TW (1) | TW201628785A (zh) |
WO (1) | WO2016051796A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220080238A (ko) * | 2020-12-07 | 2022-06-14 | 에스케이씨솔믹스 주식회사 | 연마패드용 시트, 연마패드 및 반도체 소자의 제조방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200028097A (ko) * | 2018-09-06 | 2020-03-16 | 에스케이실트론 주식회사 | 웨이퍼 연마 장치용 연마패드 |
JP2020055091A (ja) * | 2018-10-04 | 2020-04-09 | 株式会社ディスコ | 被加工物の研削方法 |
TWI818029B (zh) * | 2019-05-31 | 2023-10-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法以及研磨方法 |
US20230211454A1 (en) | 2020-05-28 | 2023-07-06 | Tokuyama Corporation | Laminated polishing pad |
JP6927617B1 (ja) * | 2020-11-19 | 2021-09-01 | 不二越機械工業株式会社 | ワーク研磨装置およびトップリング用樹脂マット体 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08108372A (ja) * | 1994-10-07 | 1996-04-30 | Mitsubishi Electric Corp | 研磨布 |
JP3459317B2 (ja) * | 1995-06-29 | 2003-10-20 | 日東電工株式会社 | 研磨パッド |
JP2000343411A (ja) * | 1999-06-01 | 2000-12-12 | Teijin Ltd | 研磨用シート |
JP2001176829A (ja) * | 1999-12-20 | 2001-06-29 | Nitto Denko Corp | 半導体ウェーハの研磨方法及び半導体ウェーハ研磨用パッド |
US6593240B1 (en) * | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
CN100496896C (zh) * | 2000-12-01 | 2009-06-10 | 东洋橡膠工业株式会社 | 研磨垫 |
JP4550300B2 (ja) * | 2001-03-09 | 2010-09-22 | 帝人株式会社 | 研磨用シート |
JP2002331453A (ja) * | 2001-05-08 | 2002-11-19 | Shin Etsu Handotai Co Ltd | ウェーハの研磨方法及びウェーハの研磨装置 |
JP3455208B2 (ja) * | 2001-11-13 | 2003-10-14 | 東洋紡績株式会社 | 半導体ウエハ研磨パッド、半導体ウエハの研磨方法、研磨パッド用研磨シート、及び研磨シート用発泡体ブロック |
JP2004025407A (ja) * | 2002-06-27 | 2004-01-29 | Jsr Corp | 化学機械研磨用研磨パッド |
CN1684799A (zh) * | 2002-09-25 | 2005-10-19 | Ppg工业俄亥俄公司 | 平面化用的抛光垫片 |
WO2005120775A1 (en) * | 2004-06-08 | 2005-12-22 | S.O.I. Tec Silicon On Insulator Technologies | Planarization of a heteroepitaxial layer |
JP2006186239A (ja) * | 2004-12-28 | 2006-07-13 | Toyo Tire & Rubber Co Ltd | 研磨パッドおよび半導体デバイスの製造方法 |
JP5291647B2 (ja) * | 2010-03-08 | 2013-09-18 | 株式会社岡本工作機械製作所 | 取替え交換が容易な積層研磨パッド |
JP2013018056A (ja) * | 2011-07-07 | 2013-01-31 | Toray Ind Inc | 研磨パッド |
JP2014124718A (ja) * | 2012-12-26 | 2014-07-07 | Toyo Tire & Rubber Co Ltd | 積層研磨パッドの製造方法 |
US9186772B2 (en) * | 2013-03-07 | 2015-11-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with broad spectrum, endpoint detection window and method of polishing therewith |
-
2015
- 2015-09-30 TW TW104132369A patent/TW201628785A/zh unknown
- 2015-09-30 WO PCT/JP2015/004980 patent/WO2016051796A1/ja active Application Filing
- 2015-09-30 JP JP2015193635A patent/JP6671908B2/ja active Active
-
2019
- 2019-11-06 JP JP2019201444A patent/JP2020037182A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220080238A (ko) * | 2020-12-07 | 2022-06-14 | 에스케이씨솔믹스 주식회사 | 연마패드용 시트, 연마패드 및 반도체 소자의 제조방법 |
KR102489678B1 (ko) | 2020-12-07 | 2023-01-17 | 에스케이엔펄스 주식회사 | 연마패드용 시트, 연마패드 및 반도체 소자의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
WO2016051796A1 (ja) | 2016-04-07 |
JP2016068255A (ja) | 2016-05-09 |
TW201628785A (zh) | 2016-08-16 |
JP2020037182A (ja) | 2020-03-12 |
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